DE1933157C - Circuit arrangement for the mutual adaptation of logic circuits - Google Patents

Description

2. Circuit arrangement according to claim 1, that would result.

characterized in that the working on the low according to the principle of current transfer

Reference potentials at em: and / or in the second emitter-coupled transistors for implementation

Voltage range operating logic circuit 65 of logic functions are also in others

device (1) from a voltage stabilizer (34), context has become known (»Electronic

whose output voltage is in temperature computing systems «, Issue 1, 1959, pp. 22, 23). Also at

Changes in a corresponding manner with the these known logic circuits is the

Disadvantage of a relatively high power requirement before or in the second voltage range

act. In addition, is; also in this interconnection circuit with one on a high

hang nothing about the operation of such a link reference potential level and / or in the first span

logic circuits operating on different reference potential areas

tial levels and / or in different voltage levels

are well known. Current transfer circuit working transistors

It is also known ("Siemens Zeitschrift", issue 11, possibly about a basic collector circuit November 1964, pp. 807 to 811), for the operation of operated further transistor with the collector so-called limit value stages the intended one of the working in power takeover circuit Control signals via a preamplifier stage to emitter-coupled transistors on the lower, which, as it were, as an intermediate stage, the respective reference potential level and / or in the second occurring control signals in system-compatible signals voltage range operating linkage or Transforms impulses. Connected over the operation of Verution, and that the transistors in the Linking circuits of the type mentioned at the outset are provided in this way, however, the last-mentioned matching circuit In this context, too, nothing is suspected that one of the collectors knows of these transistors detachable signals given

After all, an integrated failure via an emitter follower transistor is the basis of one Knüpfungskreis known (USA.-patent specification of the transistor in the on the high reference potential-3 259 761, Fig. 1). in the case of the two according to the principle of level and 'or in the first voltage range the current transfer working emitter-coupled 20 working logic circuit in current over transistors are provided, one of which is working on its receiving circuit transistors directly on the base picks up a switching signal and the other can be controlled. The invention has the advantage at the base via an additional transistor that is on different reference potential-reference potential is created. The two according to the level and / or in different stress-relieving principle the current transfer working transistors 25 working logic circuits that are rich in ren have a common emitter resistor current transfer circuit working emitter-coupled and individual collector resistances. From the pelie transistors for the implementation of ver collectors These two transistors are included via linking functions, in a relatively simple manner Emitter follower output switching signals removable. Can be interconnected in the manner adapted Connection with the just considered scarf 3 ° and that as a result of the on a low prayer Although it is known, this circuit in a train potential plane operating logic circuit stables To use toggle switch; over the required relatively low power consumption the circuit in question between need these circuits to a much greater extent Logic circuits that are integrated on different and with conventional integrated switching reference potential levels and / or can be summarized in different lines as this bis voltage ranges work is possible in this context. It also becomes more advantageous However, nothing is known either. Enable a relatively high working speed

The invention has for its object to aim. In other words, this means that Way to show how a circuit arrangement which is achieved by the invention of the advantage that from above-mentioned type is to be trained so that under 40 logic circuits with in power takeover utilization the emitter-coupled transistors operating in logic circuits of the circuit type of existing high work for the implementation of linkage functions speed of the power requirement of such so-called large-scale integrated circuits (LSI link circuits for the purpose of strong lines) can be produced in a relatively simple manner, integration can be reduced. 45 can.

The object indicated above is achieved. Further features and embodiments of the invention a circuit arrangement of the aforementioned can be found in the steps below Kind according to the invention in that for the adaptation of drawings.

Solution of a on a high reference potential level Figures 1 to 4 show embodiments of the shell and / or in a first voltage range 50 processing arrangement according to the invention;
5 and 6 show embodiments of other reference potential plane and / or in a two-fit circuit for adapting a logic low reference potential plane operating on a th voltage range and / or in a circuit a transistor of a current transfer switch Voltage range working link with its base with an output terminal of the 55 connection circuit with a link circuit working on a high reference on the high reference potential level and / or in the potential level and / or in a first voltage box voltage range working linkage circuit is connected under circuit that an additional, in KoI based on a TTL logic circuit. In Fig. 1 one on a high reference potentials of this matching circuit in such a preliminary level and / or in a first, here large span that through the gating circuit 2 operating from the collector of one of the voltage range, transistors of this matching circuit one on a low reference potential level and / or the base of one of the transistors working in current transfer or in a second, here small voltage range circuit, the one working logic circuit 1 and two lower potential level and / or in the second 65 matching circuits 3 and 4 shown. The logic circuit operating on the voltage range low reference potential level and / or in the device can be controlled directly and that the logic circuitry operating on a low reference potential level and / or circuit 1 for adapting the second voltage range contains a unit gate circuit 5,

which consists of two transistors 6 and 7, which are in the voltage range in which the Ver current transfer circuit work. In this case, output signals of the base of the transistor 7, which are emitted from the knüpiungs circuit 1, have a reference voltage. This is done by a suitable choice of the ratio Vrefl, and the base of the transistor 6 serves as ratios of resistors 28, 29 and 30 in the on-signal input. In this case, several matching circuits 3, which are also provided in current over transistors 6, are optionally provided. The emitters of the transceiver circuit working transistors 26 and 27 interfere with 6 and 7 via a common resistor. An output signal taken from the collector of one of these transistors 8 aii a first electrical voltage line 9, 26, 27 is connected directly. The collectors of the transistors 6 without the use of an emitter follower and 7 are connected via resistors 62 and 10 to an io transistor, as an input signal of the reference potential level on a low second electrical voltage line 11 and / or in the second Spansen provided voltage range operating logic circuit 1 transistors 6 connected to one another. The collector fed, namely there the base of one of the transistors of the transistors 6 and the transistor 7 lead disturb 6.

to separate output terminals 12 and 13. 15 causes the matching circuit 4 is a ANPAS by-the considered elements, the encryption solution which is at a low Bczugspctentialebene knüpfungsschaltung 1 nor a arbeiten- of resistors 14 and / or in the second voltage range and 15, and consisting of a diode 16 circuit, the switching circuit 1 with the on a high which is used to the above-mentioned reference voltage reference potential level and / or in the first Spanbzw. Define reference potential level Vrefl . By ao voltage range working logic circuit 2. Appropriate selection of the ratio of the resistance The relevant matching circuit corresponds in states 14 and 15, the reference voltage Vrefl can be chosen to build part of the logic circuit 2 so that its value is an average of the value on the high Reference potential plane and / or in the base of the transistor 6 supplied input to the first voltage range operates. The adapt link signal is. »5 solution circuit 4 is equipped with a basic collector

The switching-on operated transistor 31, which forms the logic circuit 2, with the collector gate circuit corresponds completely to a conventional one of the emitter-coupled logic circuits operating in the current transfer circuit. the emitter-coupled transistors of passing through the thereby intended, low in Stromübernahme- reference potential level and / or \ n the circuit-operating transistors 17 and 18, 30 is driven second voltage range working Verknüpein emitter follower transistor 19, the so-evaporation circuit 1 is connected. Two transistors 32, 33 belonging to the adaptation for signal amplification and also to a leveling circuit 4 , which is used for displacement. In the work at a high reference in current transfer circuit are so gepotentialebene and or switches in the first Spannungsbe- that the base of the transistor 32 with the rich operating switching circuit 2, the 35-emitter of transistor 31 is connected, and that the emitters of the transistors 17 and 18, a reference voltage Vrej 2 resistance to a third voltage line 20 leads via a base of the transistor 33. This reference voltage is closed by the cathode . The collectors of the relevant Tran diode 16 are removed, from whose anode the resistors 17 and 18 are removed via resistors to a tension voltage Vrefl,
fourth voltage line connected with said 40 The following are the individual circuit blocks second voltage line 11 is connected. In addition to the in F i g. 1 the circuit arrangement shown has the elements under consideration, the linkage is considered in more detail. In the case of the resistors 21, 22 and 23, a potential level and 'or in the second voltage transistor 24 and diodes 59 and 60 on the low reference circuit 2; this area working logic circuit 1 takes place circuit elements form a circuit which 45 does not shift the reference potential plane and ' serves to supply the base of the transistor 18 with a reference span or the voltage range in which the respective voltage. With the base one of the signals appear in the reverse. As a result, not only is the electrical connection circuit 2 provided transistors 17 low power consumption , but a line 25 is connected, which also serves to signal the electrical source voltage to a very gong. Furthermore, a resistor 61 is connected to the base of the relevant 50 low value (of, for example, less than 2 V) down-transistor 17. Moreover, it should be noted here that the outside; this resistance is used to control the impedance matching of the amplitude, with which the connection purposes. signals for the logic circuit under consideration

The matching circuit 3 is used for matching to occur about half as large (40OmV) as with

one at a high reference potential level and / or 55 an ordinary emitter-coupled link

fai a first voltage range working supply circuit (ECL circuit). Besides, it's det

logic circuit, such as the logic circuit interfering noise ratio small. If this link

device 2, with a point at a low reference potential fanning circuit aa emerge (e.g. in an LSI

level and / or in the second voltage range circuit) attached to the occurring disturbances

working logic circuit, such as the weak 60, then in practice none at all

logic circuit 1. The structure of the problem in question. Finally it should be noted that the

Adaptation switching rank 3 largely corresponds to the stray capacitance of the connecting line between The structure of the gates arranged next to one another on the high reference potential level is so small that £

or working in the first voltage range, their influence is relatively small

Linking circuit 2. The relevant adapter 65 the relevant linkage circuit in emer LSI

singing circuit 3 responds to the on-circuit supplied to it on a semiconductor wafer or ceramic

output signals hm output signals that are on der- miksobstrat or on a printed Schahungs

the same reference potential level and / or be accommodated in the same plate.

7 8

In the case of a high reference potential level and / of the electrical voltage supplied to it; he gives or stabilized voltages operating in a first voltage range on the voltage line 9 Logic circuit 2 outputs the basic collector and 11 from. The change in between the chip circuit operated transistor 19 output signals voltage lines 9 and 11 occurring voltage in with an amplitude deflection of about 0.8 V. 5 Dependence on the temperature and the change With regard to the fact that this logic switch- the voltage between the base and the emitter management by stray capacitances of the intended interconnection of a transistor depending on the tempering connection lines is hardly influenced, door will correspond to each other.

this logic circuit in the cases of the logic circuit 1 comprises according to sets in which induced disturbances are relatively large. io F i g. 2 a first transi-die in a unit gate is bypassing the printed circuit board 36 and two resistors 37 and 38. The Verkenden or connecting connecting lines of the ratio of the resistance values of the resistors 38 and Case. If the intermediate connection is so long, it is chosen so that it is slightly larger than 1. The transmission line transmit a signal without the voltage difference between the voltage lines above already mentioned resistor 61 is provided, 15 gene 11 and 9 has approximately a value that of the sum so there are relatively high reflection losses. in all - the base-emitter forward voltage of the transistor what is common is the impedance of the intermediate connection 36 and the amplitude deflection of the occurring line for a printed circuit board or the like. Input signal corresponds. In the present case occurs so low that the value of the resistor 61 is relatively the input signal with an amplitude deflection is low. With regard to the fact that at the ends ao of about 0.4 V on. This value is smaller than that of resistor 61 has a relatively low voltage value of the base-emitter forward voltage of the Tran, however, the electric power consumption is sistor 36 reduced by the output through this resistance 61 is relatively low. - saturation voltage of the transistor concerned. the

With regard to the adaptation circuit 3, let the threshold value property of the unit under consideration be still noted that an additional, in collector 25 gatters is not critical. Becomes a basic logic circuit operated transistor, however, the transistor circuit is composed of a large number of unit types 26, 27 of this matching circuit 3 by means of a gate, so the relevant Reference voltage biases, the value of which in the middle unit gate a total of a logic operation of the voltage range lies in which link. When connecting the unit gates in the slip signals from the logic circuit 2 here 30 chen manner as in the embodiment according to appear. It should also be noted that F i g. 1 is not used for level shifting the relevant reference voltage is also provided in the dependent transistor; therefore has the connectedness from the temperature changes, the in the area fung circuit 1 a high operating speed the entire circuit arrangement prevails with very low electrical power consumption.

With regard to the matching circuit 4, it should be noted that, in contrast to that shown in FIG. 2 illustrated common collector circuit operated transistor 31 is a circuit arrangement in which a relatively strong amplitude deflection of the reference potential level on a high and / or in a first, emerging logic signal is achieved. Furthermore, the high voltage range operating linkage is noted that by removing the reference circuit 2 an emitter catcher transistor is provided, voltage Vrejl from that already mentioned above, namely on the input side. This emitter follower transistor diode 16, a precise operation of the transistor concerned, causes a shift of the reference potential matching cladding over a wide temperature range, with which signals fed to it on the input side can be guaranteed. Eventually be.

it should also be noted that if one is omitted on 45 In the matching circuit 3, two in current

the high reference potential level and / or working in the transfer circuit transistors

supplied to the first, high voltage range operating reference voltage, which with the help of resistors

logic circuit 2, the output signal of the points 39, 40 and 41 is generated. Will the above-

matching circuit 4 directly the matching circuit- called resistance ratio taking into account-

tang3 can be fed. 50 transition of the temperature response of the voltage

With regard to the voltage that occurs in FIG. 1, it can be selected

It should also be noted that the common temperature curve of the reference voltage with

all emitter resistances which are included in the current transfer.

circuit working transistors of the link In the matching circuit 4 is a reference

fung circuit in each case by constant current sources 55 voltage Vrej 2 with the aid of a transistor 42 and

can be replaced. with the help of resistors43 and 44 of the base

In Fig. 2 is a further embodiment of a transistor in a current transfer circuit

Circuit arrangement according to the invention shown. working transistors fed. Since the

With 1 is an on a low reference potential source voltage here with the temperature accordingly

level and / or a second, low voltage 60 of the base-emitter voltage of the transistors changes,

Area working logic circuit designates m the logic circuit 1 changes to the

net, and with 2 is one on a high reference-potential deflection amplitude of the occurring signal

tial level and or in a first, high span- the temperature according to the change in the

logic circuit operating in the area of the base-emitter voltage of the relevant transistor

draws. With 3 and 4 there are matching circuits 65 ren. Therefore the reference potential also changes

designated. The circuit level shown in Fig. 2 of the output signal with the temperature, and

block 34 represents a tension stabilizer

This voltage stabilizer stabilizes the base-emitter voltage of the transistors. In the

9 '10

matching circuit 4 according to FIG. 2, the base potential circuit 1 is not a critical threshold value property

tial of the transistor 42 according to this reference. Is the ratio of the emitter circle and KoI-

potential level set. reading circuit of the transistor 54 lying resistors

In the voltage stabilizer 34 is a tran- in a suitable manner, so the deflection

sistor 45 is a feed transistor, which is formed by a 5 of the transistor 54 occurring at the collector

Transistor 46 is regulated. The output span output signal is just as large as that of the input

The voltage stabilizer 34 is activated by the signal or link signal that is at a high level

ratio of the resistors 47 and 48, through the reference potential plane and / or in a first

voltage drop of the diode 49 and the logic circuitry operating through the voltage range

Base-emitter voltage of transistor 46 is determined, to device 2.

If the temperature changes, the base voltage changes with regard to the anemitter voltage shown in FIG of the transistor 46 and the matching circuit 4 should also be noted that these wärts- or forward voltage drop of the diode 49 is particularly simple and that it consists of and thus the output voltage of the relevant output side z. B. also directly with the input of a Circuit. That is, the voltage difference 15 matching circuit 3 can be connected as they are between the voltage lines 9 and 11 are in the circuit arrangement shown in FIG speaking changes. This is provided in the link.

In the above explanation of the in the drawing

Exercise of the operating point of the transistor 36 causes. Circuit arrangements shown are as

In FIG. 3, another exemplary embodiment of the transistors is each of the NPN conductivity type

Circuit arrangement according to the invention shown. has been accepted. However, it should be seen

The voltage lines 9 and 11 of the on a low, that the same circuit arrangements also

rigen Berug potential level and / or in a two - with the help of transistors of the npn conductivity

th, low voltage range working type can be built up,

logic circuit 1 are connected to a voltage stabilizer. 5 is an embodiment of a current

Sator 34 connected, which is connected to an external voltage abscnk-V erverbungsgatters using the

leading voltage lines 9 and 50 connected transistor-transistor-Logitk (TTl.-circuit) resp.

is. In contrast to the circuit arrangement according to using a diode-transistor logic

Fig. 2 shows the voltage of the voltage line (DTl circuit).

Il stabilized In this case the output gate contains an input ITND gate

gnal of the logic circuit 1 without intermediate and an inverting transistor circuit. This

circuit of a shift of the Bc / ugspotcn transistor gate circuit is used as a logic

tialcbene causing F.mitterfolgetransistor the circuit used, the signals with high amplitude

Matching circuit 4 supplied. The reference chip- processed in this logic circuit has

tion Vrcil. which work in the current transfer circuit, each unit gate, consisting of in current transfer

trending transistors of this matching circuit 4 took-off transistors operated, one for

is supplied is selected so that it is within the potential plane shift serving pn-Uber

Voltage range or between the binary history. namely between the respective unit

link level lies within which or with the gate, which occurs with a large amplitude displacement.

from the logic device 1 signals issued 40 tend signals to be processed, and the cr-

vserden. Fine diode 51 is used to adapt the aforementioned inverting transistor circuit.

of the temperature range of the reference voltage Vrefl (according to FIG. 5 is a multiple cut r-transistor

that of the multiplexing signal amplitude. 55 provided, which acts as a l'ND gate and the

In the matching circuit 3, the collector is replaced by the transistors of a matching circuit a transistor in the current transfer circuit 45 as in the circuit arrangement considered above working 1 ranMstorcn on the voltage line 11 voltages are provided. With 56 and 57 are Fmanecsch! Iisscn. and tier other transistors that are in output clamps for with a high amplitude Stiomuheinaiimesehaltung working transistors entering input signals with 1 is a the matching circuit 3 is trad or via a resistor at a low reference potential level connected to this voltage line 11. Fin 50 working in a second voltage range Ver Transistor 52 is used to set the reference voltage. logic circuit 1, with 6 and 7 are that of the base of one of the two workers in power transfer circuit working in power transfer circuit Transistors of the matching circuit 3 sistors denoted, the afc, Einhettsgatter in here ec is supplied, a suitable temperature response needed sense of the logic circuit 1 we give 55 ken. The transistor 7 is a reference voltage

The voltage stabilizer 34 comprises a Tran- Vrefl supplied. In the case of the one shown in FIG

sistnr 53. which is operated as an emitter follower and the circuit arrangement is also a pn junction 58

the required current for the circuits - provided on the one hand at the Sitgsleitungli

Order. The response time of the voltage and on the other hand at the base of the transistor 6 angc-

stabüisators 34 is short. 60 is closed.

In F1 g 4, a more severe embodiment of the lying at the input terminals 56, 57 is an ester

Matching circuit 4 shown in FIG. 3. With »1« correspondingly high linkage potential, see above

this matching circuit is different to the transistor above the collector of the tran-

the switching arrangement previously considered supplied a current to a sistor 55, namely from the

Transistor 54 as the one transistor from two in 65 voltage line 20. This increases the base

Current transfer circuit working transistors potential of the transistor 6 at. If the base pot

no reference voltage. Otherwise, the level of the transistor 6 has reached the potential that

fcndc \ nmatching circuit 4 as the link * leads the voltage line 11, the nn-upper-

aisle 58 conducting. This stops the increase in the base potential of transistor 6 and transistor 6 operates at a certain link signal amplitude. Occurs at input terminal 56 a »0« has the corresponding input potential, the transistor location is again in the non-conductive state convicted.

The Zar adaptation of the logic circuit 1 to a logic circuit! as provided in the circuit arrangements considered above, contains matching circuit according to FIG. 5 two transistors 63 and 64 operating in a current transfer circuit, one amplifier

sistor 66, an output transistor 62 and a transistor 68. The output transistor 62 corresponds to while the inverting transistor in the current sink logic circuit; he belongs to one Holding circuit that temporarily delivers a charging current to the load capacity present on the output side.

In Fig. 6 is yet another embodiment a matching circuit shown. According to Fig. 6 ίο is an amplifier transistor 69 with its base to the Collector of a multiple emitter transistor 55 connected. The collector-base piece of the transistor 69 serves as a pn-terminal path.

For this purpose 2 sheets of drawings

Claims (1)

Forward voltage drop of a pn junction o ... changes, is fed. Claims: 3 circuit arrangement according to claim 1 or 2, characterized in that between 1. Circuit arrangement with in each case at least five transistors connected to the input of the potential level working on the high reference two in the current transfer circuit and / or in the first span transistors logic circuit operating with a common emitter resistance area and individual collector resistances to the connecting line (25) and leading to (2) mutual adaptation of an adaptation receiving circuit in Stromüber- a supply voltage line (9) working transistors enthal- io resistor (61) is arranged. trend logic circuits that operate on different 4. Circuit arrangement according to one of the annexed reference potential levels and / or in Proverbs 1 to 3, characterized in that the different voltage ranges work, there-. Transistors of the one on the high reference are characterized by the fact that for the matching potential level and / or in the first voltage a logic circuit operating on a high reference potential level 15 · voltage range and / or in a first voltage range work with a logic circuit (2) with a mismatch circuit operating on and / or in the second voltage range working at a low reference potential level and / or in the logic circuit connecting a second voltage range using a multiple emitter link circuit (1) a transistor of a current transistor are replaced (Figs. 5 and 6 ). Takeover circuit (26, 27) with its base with
an output terminal on the high reference potential level and / or in the first voltage area working logic circuit (2)
is connected that an additional, in collector 25
basic circuit operated transistor (e.g. 52) the transistors (26, 27) of this adaptation ^ - The invention relates to a circuit connection (3) biased in such a way that by ordering at least two transistors operating in current via the collector of one of the transistors taking circuit with (26, 27) this matching circuit (3) decreasing 30 common emitter opposites and individual baren signals the base of one of the transistors operating in current over collector resistors for mutual adaptation of the transistors operating on the low potential level of the current transfer circuit and / or in the interfering logic circuits that operate in the second voltage range Linked aut different reference potential levels and / or fungs circuit (1) is directly controllable and that 35 work in different voltage ranges, to adapt a on a low reference Attitude arrangement for carrying out logic voltage range working combination circuit operations with N (N > 2) in emitter circuit beil) with a transistor driven on a high reference potential known (German layout level und'oder in the first voltage range 40 writing 1 196 241). In this known circuit-working logic circuit (2) the base arrangement, the emitters of the said transistors are connected together in this matching circuit (4) in ren, and the collectors of all current transfer circuit working transistor transistors except for one, whose bases the input ren (32, 33) if necessary, are supplied via an in collective signals, further transistors, which are also operated in a common circuit, are connected and connected to the collector of one of the in current pole of the voltage source via a resistor with the one disturbance (31). The mentioned transfer circuit operating emitter-coupled transistors are pelt transistors on the low reference with the same pole of the voltage source and / or in the second voltage level. The output signals are connected to the logic circuit 50 working in the relevant area, the circuit at the collectors of the (N- l) Tran- (1), and that the transistors (32, sistors and / or at the collector of one transistor 33) in the latter Adaptation circuit removed. Although the circuits of the currently (4) are biased in such a way that they have a relatively high Arbeitsgeschwindigdem collector of one of these transistors (32, 33), their power requirement in disadvantageous detachable signals, possibly via a 55 way, is relatively high . This sets considerable limits for the integrating emitter follower transistor, the base of a transistor, which can be used in the high reference potential level ) in current, which transistors (17, 18) 60 arrangements operating on such a circuit taking circuit can be controlled directly at different reference potentials. levels and / or in different areas of tension