DE1614773A1 - Method for contacting semiconductor components - Google Patents
Method for contacting semiconductor componentsInfo
- Publication number
- DE1614773A1 DE1614773A1 DE19671614773 DE1614773A DE1614773A1 DE 1614773 A1 DE1614773 A1 DE 1614773A1 DE 19671614773 DE19671614773 DE 19671614773 DE 1614773 A DE1614773 A DE 1614773A DE 1614773 A1 DE1614773 A1 DE 1614773A1
- Authority
- DE
- Germany
- Prior art keywords
- insulating layer
- metal contacts
- semiconductor
- layer
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000007740 vapor deposition Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 101100495769 Caenorhabditis elegans che-1 gene Proteins 0.000 claims 1
- 238000000454 electroless metal deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 3
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Description
"Verfahren zum- Kontaktieren on Halbleiterbauelementen' Kontakte und-Leitbahnen-auf
der Oberfläche eines Halbleiterbauelementes sollen eine bestimmte Mindestdicke aufweisen.
Dies Ist-einerseIts-erforderlich, um die Halbleiterbauelemente mit einem der bekannten
1--oi#f"#i'--tieru-ngsverfahren in Gehäuse oder-Schaltungen so einbauen 'zu können,-daß
zwischen den Elektroden bzw. Le bahnen des Halbleiter-bauelementes, und den jeweiligen
Kontaktelementen-des Gehäuses oder der Schaltung eine gute und dauerhafte elektrische
Verbindung zustande kommt* Andprerseits sinkt mit.der Dicke einer -
Leitbahn
ihr W:L-derstands-wert, -was beispielsweise bei -Solarelementen von besonderer Bedeutung
ist, da der Widerstands-,wert der Leitbähnen-eines Solarelementesi die-steh aufder
vom Licht bestrahlten Obörfläche des. Elementes befinden, nicht durch Verbreite
rung der Lettbahnen Uerabgesetzt werden kann. Eino Verbreiterung#der.Leitbahnen
bei-Sol-arelementen würde den-Wirkungsgrad der Batielemente herabsetzen, da die
vom Licht bestrahlte Halbleiterfläche durch.-breite Leitbahnen zu sehr-verkleinert
wird.
Relativ dicke-Leitbahnen können beispielsweise durch-Aufdampfen
hergestellt werden. Es hat sich jedoch erwiesen, daß die zur Aufäampfung erforderlichen
hohen Temperaturen und besonders die zeitlich lange- Aufdampfdauer, die zur Herstellung
dicker Leitbahnen erforderlich ist, die elektrischen Eigenschaften des Halbleiterbauelementes
verändern oder das Bauelement ganz zerstören. Außerdem geht bei der Aufdampfung
der Teil der Aufdampfsubstanz verloren, der sich auf der für die Aufdampfung erforderlichen
Metall-oder Lackmaske niederschlägt. Handelt-es sich bei der Aufdampfsubstanz um
Gold oder ein anderes wertvolles Metall, so ist bei der Herstellung dicker Leitbahnen
der dadurch entstehende Verlust relativ groß4 Man kann, um dicke Leitbahnenherzustellen,
auch so vorgehen, daß auf die Halbleiteroberfläche zunächst sehr dünne Leltbahnen
oder Kontaktflächen aufgedampft und diese anschließend durch Tauchver.zinnen verstärkt
werden. Die so herggste711ten Leitbahnen und Kontaktflächen sind jedoch meist uneben
und an der Oberfläche gewölbt, so daß auch sie-die Anforderungen der Anwender der
gefertigten Bauelemente nicht hinreichend erfüllen.
Die Erfindung soll anhand eines Ausführungsbeispieles näher erläutert werden.The invention is to be explained in more detail using an exemplary embodiment will.
Figur 1 zeigt in p#erspektivischer Ansicht ein Solarelement, während in Figur 2 und 3 das Solarelement im Schnitt in zwei verschiedenen Fertigungsphasen dargestellt ist.FIG. 1 shows a solar element in a perspective view, while in FIGS. 2 and 3 the solar element is shown in section in two different manufacturing phases.
Das Solarelement nach Figur 1 besteht aus einem einkristallinen Sillzfum-HalbleiterkÖrper 1, der sich aus zwei Zonen unterschiedlichen Leitfähigkeitstyps zusammensetzt. Die eine Zone ist mit einem kammförmigen Metallkontakt 2 versehen, während die andere Zone auf der der Kammstruktur gegen-Überlfegenden Oberflächenseite des Halbleiterbauelementes einen flächenhaften Metallkontakt 3 besitzt. Die Leitbahnen 4 des kammfÖrmigen Metallkontaktes auf der vom Licht bestrahlten Oberflächenseite 5 des Solarelementes müssen schmal sein, um die vom Licht getroffene Halbleiternberfläche des Solarelementes möglichst weni& einzuschränken. Andererseits müssen die Leitbahnen einen kleinen Widerstand aufweisen, um Verluste in den Leitbahnen zu vermeiden. Die Leitbahnen müssen weiterhin gleichmäßig über die bestrahlte Oberfläche verteilt sein, um die inneren Verluste durch den Bahn:*iderstand des Halbleitermaterials klein zu halten.The solar element according to FIG. 1 consists of a monocrystalline Sillzfum semiconductor body 1, which is composed of two zones of different conductivity types. One zone is provided with a comb-shaped metal contact 2, while the other zone has a flat metal contact 3 on the surface side of the semiconductor component that overlaps the comb structure. The interconnects 4 of the comb-shaped metal contact on the surface side 5 of the solar element that is irradiated by the light must be narrow in order to restrict the semiconductor surface of the solar element that is struck by the light as little as possible. On the other hand, the interconnects must have a low resistance in order to avoid losses in the interconnects. The interconnects must continue to be evenly distributed over the irradiated surface in order to keep the internal losses due to the: * resistance of the semiconductor material low.
In Figur 2 ist das Solarelement 1 im Schnitt mit den beiden Halbleiterzonen 6 und 7 dargestellt. Zu seiner Herstellung geht man beispielsweise so vor, daß in einen pleitenden, eInkristallinen Silizium-Halbleiterkörper allseltig ein Ströstellenmaterial eindiffundiert wird, das im Randberelch des Halbleiterkörpers eine schmale n-leitende Zone 7 bildet. Der an einer Oberflächenseite vorhandene Teil dieser n-leitenden Zone 7 wird durch Ätzen oder Schlelfen soweit abgetragen, bis die p-leitende Zone 6 in diesem Bereich an die Oberfläche des Halbleiterbauelementes tritt und dort kontaktiert werden kann. Anschließend wird die Halblelteranordnung mit einer dünnen isolierenden Schicht 8 überzogen, die bei einem Si liztum-Halbleiterkörper vorteilhafterweiße aus Slliziumdioxyd besteht und weniger als looo R dick Ist. Diese Isolierschicht wird beispielsweise durch thermische Oxydation bei 8oo 0 C hergestellt.In FIG. 2, the solar element 1 is shown in section with the two semiconductor zones 6 and 7 . To manufacture it, the procedure is, for example, that an impurity material is diffused into a p-conducting, single-crystal silicon semiconductor body, which material forms a narrow n-conducting zone 7 in the edge region of the semiconductor body. The part of this n-conductive zone 7 present on one surface side is removed by etching or grinding until the p-conductive zone 6 reaches the surface of the semiconductor component in this area and can be contacted there. The half-parent arrangement is then coated with a thin insulating layer 8 which , in the case of a silicon semiconductor body, advantageously consists of silicon dioxide and is less than 1,000 R thick . This insulating layer is produced for example by thermal oxidation at 8oo 0 C.
Auf die dünne Isolierschicht, die für das einfallende Licht kein Hindernis bilde t, werden Metallkontakte bzw. Leitbahnen 3 und 4 zur Kontaktierüng der Halbleiterzonen 6 und 7 aufgedampft. Hierzu wird beispielsweise zunächst ein TItanbelag 9 und anschließend ein Silberbelag lo auf die Isolierschicht 8 aufgedampft. Die Aufdampfung erfolgt vorteilhafterwelse mit Hilfe der ansich bekannten Maskentechnik, wobei sowohl Metall- als auch Photolackmasken zur Anwendung gelangen können. Die aufgedampfte Titan-Silber-Schichtenfolge (ge 10) weist vorteilhafterweise eine Dicke von ca. 2/um auf. Metal contacts or interconnects 3 and 4 for contacting the semiconductor zones 6 and 7 are vapor-deposited onto the thin insulating layer, which does not form an obstacle to the incident light. For this purpose, for example, a titanium coating 9 and then a silver coating lo is vapor-deposited onto the insulating layer 8. The vapor deposition is advantageously carried out with the aid of the mask technology known per se, it being possible for both metal and photoresist masks to be used. The vapor-deposited titanium-silver layer sequence (ge 10) advantageously has a thickness of approximately 2 μm.
Anschließend wird die Halbleiteranordnung nach Figur 2 ca. 2 Minuten lang bei 5o0 0 C gesintert. Dabei diffundiert Titan durch die dünne SiO -Schicht und stellt den elektrischen 2 kontakt zu den Zonen 6 b.zw.'7 des Solarelementes her. Das in die Oxydschicht 8 eindiffundierte Titan ist in Figur 2 durch Punktierung angedeutet.The semiconductor arrangement according to FIG. 2 is then sintered at 50 ° C. for about 2 minutes. Titanium diffuses through the thin SiO layer and establishes the electrical contact to the zones 6 and 7 of the solar element. The titanium diffused into the oxide layer 8 is indicated in FIG. 2 by dots.
Figur 3 zeigt das fertig kontaktierte Solarelement. Dazu wurde die Anordnung nach Figur 2-in einen Elektrolyten eingebracht und an die'Kathode des galvanischen Bades angeschlossen. Als Elektrolyt dient beispielswelse-das Metallsalz des abzuscheidenden Metalls. Wird dann an die Elektroden des galvanischen Bades eine Spannung angelegt, so scheiden sich die Metallionen an den Titan-Silber-Kontakten 4 des Solarelementes ab, währeii(1 die an deri übrigeti St-ellen der Halbleiteroberfläche vorhandene Isollerschicht 8 ein Abscheiden des' Metalles verhindert. Auf diese Weise ver>stärken sich die Titan-Silber-Kontakte in-der erwünschten Form. Für die Verstärkung der Metallkontakte eignen sich besonders die Metalle Silber, Kupfer, Nickel oder Gold. Die Metallkontakte können auch durch stromlose Abscheidung verstärkt werden, das heißt, durch chemische Abscheidung aus einer geeigneten Lösung.Figure 3 shows the fully contacted solar element. For this purpose, the arrangement according to FIG. 2 was introduced into an electrolyte and connected to the cathode of the galvanic bath. For example, the metal salt of the metal to be deposited serves as the electrolyte. If a voltage is then applied to the electrodes of the galvanic bath, the metal ions are deposited on the titanium-silver contacts 4 of the solar element, while the insulating layer 8 present on the remaining part of the semiconductor surface prevents the metal from being deposited In this way, the titanium-silver contacts are strengthened in the desired form. The metals silver, copper, nickel or gold are particularly suitable for strengthening the metal contacts. The metal contacts can also be strengthened by electroless deposition, that is , by chemical deposition from a suitable solution.
Es hat sich herausgestellt,.daß es bei Solarelementen besonders vorteilhaft ist, die Metallkontakte bzw. Leitbahnen bis zu einer Dicke von ca. lo/um-zu verstärken.It has been found that it is particularly advantageous in the case of solar elements is to reinforce the metal contacts or interconnects up to a thickness of approx.
Das erfindungsgemäße Verfahren kann auch dann zur Kontaktierung von Halbleiterbauelementen verwendet werden, wenn relativ dicke ]Reitbahnen. auf die Oberfläche von Dioden, Transistoren oder integrierten Schaltungen aufzubringen sind. Es ist für all die Bauelemente besonders geeignet,- bei denen die Leitbahnen,bzw.-die Kontakte über-ihre ganze Länge bzw. über einen Großteil ihrer Länge direkt mit der Halbleiteroberfläche bzw. mit einer Zone des Halbleiterbauelementes elektris-ch 1.eitend verbunden sein müssen. Dies gilt besonders für die Bauelemente, die Wärme-, Licht- oder andere Strahlungsenergie in elektrische Energie umwandeln.The method according to the invention can then also be used for contacting Semiconductor components are used when relatively thick] riding tracks. on the Surface of diodes, transistors or integrated circuits are to be applied. It is particularly suitable for all the components - in which the interconnects, or -the Contacts over their entire length or over a large part of their length directly with the Semiconductor surface or with a zone of the semiconductor component electrical 1. must be connected on both ends. This is especially true for the components, the heat, Convert light or other radiant energy into electrical energy.
Claims (2)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET0033279 | 1967-02-25 | ||
| DET0033279 | 1967-02-25 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1614773A1 true DE1614773A1 (en) | 1970-12-10 |
| DE1614773B2 DE1614773B2 (en) | 1975-09-04 |
| DE1614773C3 DE1614773C3 (en) | 1976-04-08 |
Family
ID=
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2709516A1 (en) * | 1976-03-29 | 1977-10-13 | Mobil Tyco Solar Energy Corp | SOLAR CELL UNIT |
| DE2916128A1 (en) * | 1978-04-24 | 1979-10-31 | Atlantic Richfield Co | METHOD FOR MANUFACTURING SOLAR CELLS |
| WO1987007766A1 (en) * | 1986-06-16 | 1987-12-17 | Hughes Aircraft Company | Drive through doping process for manufacturing low back surface recombination solar cells |
| EP0531827A1 (en) * | 1991-08-30 | 1993-03-17 | Canon Kabushiki Kaisha | Solar cell and fabrication method thereof |
| DE4220158A1 (en) * | 1992-06-19 | 1993-12-23 | Battelle Institut E V | Selective precipitation of aluminium structures from the gas phase - using locally applied thin aluminium@ layers as catalysts in the pptn. process |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2709516A1 (en) * | 1976-03-29 | 1977-10-13 | Mobil Tyco Solar Energy Corp | SOLAR CELL UNIT |
| DE2916128A1 (en) * | 1978-04-24 | 1979-10-31 | Atlantic Richfield Co | METHOD FOR MANUFACTURING SOLAR CELLS |
| WO1987007766A1 (en) * | 1986-06-16 | 1987-12-17 | Hughes Aircraft Company | Drive through doping process for manufacturing low back surface recombination solar cells |
| EP0531827A1 (en) * | 1991-08-30 | 1993-03-17 | Canon Kabushiki Kaisha | Solar cell and fabrication method thereof |
| AU651486B2 (en) * | 1991-08-30 | 1994-07-21 | Canon Kabushiki Kaisha | Photoelectric conversion element and fabrication method thereof |
| US5380371A (en) * | 1991-08-30 | 1995-01-10 | Canon Kabushiki Kaisha | Photoelectric conversion element and fabrication method thereof |
| DE4220158A1 (en) * | 1992-06-19 | 1993-12-23 | Battelle Institut E V | Selective precipitation of aluminium structures from the gas phase - using locally applied thin aluminium@ layers as catalysts in the pptn. process |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1614773B2 (en) | 1975-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |