DE10223203B4 - Electronic component module and method for its production - Google Patents

Abstract

Electronic component module with a connection substrate and at least one electronic component (7) with the following features:
- A flat substrate body (1; 21, 22, 23; 31; 411; 61) has on its flat top (1a) a contact area with internal contacts (4) for the component (7) and on its underside (1b) external contacts (10 );
- In the contact area, partially recessed internal contact bumps (3; 53; 63) are formed at a distance from the connections of the component by partial removal (2) or deformation of the substrate material, the tips of which are essentially aligned with the originally flat surface of the substrate body;
- On the inner contact bumps (3; 53; 63) an inner contact (4; 54; 64) is formed in each case by metallization and provided with a solder layer;
- On the internal contacts, the component (7) is contacted in flip-chip technology and
- From the inner contacts (4) extend conductor tracks (6, 12, 13, 14, 33, 34, 43, 44) via through holes (5; 42) to the outer contacts (10) on the ...

Description

The invention relates to an electronic Component module with a connection substrate and at least one electronic component and a method for its production.

In the EP 0782765 B1 A connection substrate with a semiconductor chip, a so-called PSGA (polymer stud grid array), has already been described, the injection-molded substrate having molded polymer bumps with a solderable end surface. The polymer bumps not only have the advantage that they can be molded with the base body in one operation, but they can also absorb and compensate for stresses, for example due to thermal expansion, due to their elasticity.

Similar polymer studs as a carrier for external contacts are also provided for a connection substrate that is described in WO 01/82372 A1. There are larger depressions in the connection substrate formed. Since the substrate in the area of these depressions has a smaller thickness vias can be produced with little effort using laser drilling. The contacting of components on this connection substrate, however, is not there described.

From the DE 100 59 176 A1 an intermediate carrier for a semiconductor module is known which consists of a carrier body in the form of a film, on the top of which a semiconductor component with its component connection elements is applied directly. Through holes are made from the underside of the carrier body in such a way that the component connection elements of the semiconductor component are exposed. The through holes are then contacted by a metallization with the component connection elements of the semiconductor component. The walls of the through holes are then exposed from the underside of the carrier body by means of annular notches, so that chimney-shaped, recessed bumps are formed which serve as external connections for the module for contacting on a printed circuit board.

In the US 5,998,875 Furthermore, flip-chip contacting by means of elastic contact bumps of an intermediate carrier is described, the chip being aligned by corresponding contours of the frame-shaped intermediate carrier. A different thermal expansion of the chip on the one hand and the intermediate carrier on the other hand is taken into account in that no fixed connections are made, so that a slight displacement between the bumps of the intermediate carrier on the one hand and the electrodes of the chip on the other hand is possible.

With the previously known substrates with polymer bumps are the latter in their distribution and arrangement to the conventional Grid of other connection elements, especially the solder balls in adapted to the so-called BGA technology. With this technique, the grid spacings because of the properties and processing form of the solder balls cannot be reduced further. However, there is now a trend towards further miniaturization, with semiconductor devices with flip-chip connections Have grid spacing of 0.2 mm and smaller and the grid spacing of Contacts on PCBs of 1 mm and more in the past were reduced to 0.5 mm and further.

The aim of the present invention is it therefore, a connection substrate for at least one electronic Component, in particular a semiconductor component, to create and specify a method for its manufacture, which a connection the components in flip-chip technology with extremely small grid spacing and at the same time, a particularly low overall height of the component and connection substrate formed module allows.

According to the invention, such a module has the following Characteristics on

• - on flat substrate body has a contact area with internal contacts on its flat top for the Component and external contacts on its underside;
• - in the contact area are due to partial erosion or deformation of the Substrate material each deepened internal contact bumps in the Distance of connections of the component, the tips of which are essentially formed with the original flat surface of the substrate body aligned;
• - on the internal contact bumps an internal contact is formed by metallization and with provided a solder layer;
• - on The component is contacted to the internal contacts using flip-chip technology and
• - of the internal contacts extend to through-holes the external contacts on the underside of the substrate body.

Through the deepened according to the invention Arrangement of internal contact bumps, by partial ablation, annular Notches or other deformation in the otherwise flat upper surface of the substrate body are formed, there is a particularly space-saving contact of the component in flip-chip technology with a particularly low overall height. The top of the hump is essentially aligned with the original flat surface of the Substrate body; only the lot order forming the contact rises above it Level.

Compared to the conventional one BGA technology, which allows flip-chip contacting only up to a certain minimum spacing of the component connections due to the size relationships of the solder balls and with which, for example, only a wire bond connection is possible at distances of less than 200 μm, enables contacting according to the invention with recessed polymer bumps Flip-chip contacting down to about 100 μm. The reason is that the solder balls are pressed together in the BGA technique during melting for contacting and thereby increase their diameter compared to their original ball diameter (to about 1.3 times), while the solder layer formed on the bumps in the invention Melting does not increase their diameter, so that the contact point does not reach a larger diameter than the connection (pad) of the component itself.

Are preferably also on the bottom of the substrate body deepened external contact bumps also formed by partial removal or deformation, which are arranged in the grid of PCB connections and the external contacts of the substrate. Depending on the arrangement and the manufacturing process the hump can this through on the top or on the bottom of the substrate body annular or even approximately latticed Notches are formed. It is also conceivable in the entire contact area the surface of the substrate body with Exception of the remaining ones cusp remove or deform by hot stamping, so that only an edge area and, if necessary, intermediate webs in the original surface plane together with the bumps stop.

Depending on the course of the conductor tracks from the internal contacts to the through holes or to other connections annular Notches partially metallized, especially on the inside be while another part, preferably at least parts of the outer areas the notch, to form insulation stretches from the metallization be kept free. This can be due to the sloping walls of the Notching can be brought about advantageously by laser radiation. The Conductor tracks on the top and on the bottom of the substrate body can in preferred embodiment each run in groove-shaped longitudinal trenches, which in the surface of the substrate body are incorporated. It is advantageous that the inclined side walls of each trenches are metallized to form conductor tracks, while the bottom area and the outer edges of the ditches, that can be processed well with laser radiation, from metallization be kept free and thus form isolation gaps. To this Wise can be very space-saving two conductor tracks each housed in a trench become.

The through holes can be round or rectangular Cross section provided either from the top surface to the bottom surface become, or they can advantageously in the range of e.g. ring-shaped, notch right next to it a hump or can also be generated in the region of a trench carrying conductor tracks. In the latter case, it is particularly advantageous to have a rectangular through hole to be provided, two opposite side walls being metallized are while the intermediate side walls Form insulation sections. This allows two separate conductor tracks are generated in a rectangular through hole, each of which separated with the two conductor tracks of a groove-shaped trench can be connected. Such rectangular through holes can generated in a simple manner, for example when hot-stamping the substrate body be being oblique running sidewalls processed with a laser beam to generate the insulation sections can be.

The substrate body can for example consist of a single film can be produced. But it can also be beneficial be to provide a base substrate on the top and / or Underside of a bump layer is laminated on, the inner contact bumps or the external contact bumps are formed are. In this case, you can the cusp layers each consist of a different material than the base substrate. So it is possible the cusp layer with the internal contact bumps to be provided from a material which, in terms of its thermal expansion properties Material of the component to be applied, preferably one Semiconductor material, is adapted, while for the external contact bumps Material that can be used in terms of its thermal expansion properties a circuit board is adapted.

An inventive method for manufacturing of a connection substrate has the following steps:

• a) In the surface of a film-shaped substrate body Polymer material is removed at least on one side by partial removal or deformation of the surface recessed internal contact bumps at a distance from the connections of formed into contacting components, the tips of which essentially with the original flat surface of the substrate body flush
• b) between the top and the bottom of the substrate body Through holes generated;
• c) by metallizing the top and bottom of the substrate body and the through holes a conductor layer is created;
• d) through targeted structuring of the conductor layer, internal contacts on the internal contact bumps on the top, Auflenkontakte on the bottom and to form electrically conductive Ver creates bonds between the internal contacts and the external contacts;
• e) the internal contacts are coated with a solder material; and
• f) the component is placed on the internal contacts, and its connections are soldered to the internal contacts.

Preferably in step a) also on the underside of the substrate body by deformation or Partial removal, for example by circular indentation, each formed by external contact bumps, and it is in step c) that the external contacts generated.

In principle, it would be possible that connection substrate according to the invention with the deepened contact humps can also be produced in a known manner by injection molding. However, since it by particularly small dimensions of the cusps themselves and the spacing between the humps go, come for the manufacture according to the invention the hump, the production of the through holes and possibly the production of grooves for guiding conductor tracks preferably a hot stamping process or a structuring of the substrate body with a laser beam into consideration. For the structuring of the metallization layer to form the conductor tracks structuring by means of a laser beam is preferably used. In one case, it is possible to use an etch resist layer to structure with a laser beam and then the exposed Structures in an etching process ablate. Another method, particularly for very thin conductor layers The metal layer can also be used directly with the laser beam be structured.

In the design according to the invention of the connection substrate, it is possible in line with the connections of semiconductor chips connection bumps with a diameter of about 50 to 250 microns with a grid spacing of about 200 μm to generate, the height the hump larger than the diameter is and preferably more than 1.3 times the Diameter of the solder joint can be. This results in a good one in a very small space elasticity of the individual connections.

By using deepened External contact bumps on the underside of the substrate body with a correspondingly smaller diameter of the solder joints of the external connections also less space on the circuit board that holds the module for the Contact yourself needed. Thus, for example, additional remains between two connections on the circuit board Space available, to run two or three conductor tracks instead of one conductor track.

The invention will follow embodiments based on the drawing explained. Show it

1 a section of a connection substrate according to the invention for a module according to the invention,

2 1 shows a schematic view of the structure of internal contact bumps in connection with through holes,

3 1 shows a sectional view of a module with bumps on the top and bottom of the connection substrate,

4 1 shows a sectional view of a substrate with an additional bump layer on the top,

5 1 shows a sectional view of a substrate with additional bump layers on the top and bottom,

6 a schematic detailed representation of grooves with conductor tracks,

7 1 shows a schematic representation of a rectangular through hole,

8th a schematic view of a conductor track structure on the top of a connection substrate, and

9 1 shows a schematic representation of a conductor track structure on the underside of a connection substrate,

10 is a schematic representation of a substrate top with one opposite 2 modified design of the internal contact hump,

11 one opposite 10 further modified embodiment of a substrate body to represent the solder application and

12 a schematic sectional view of a module according to the invention in a further modification.

In 1 a section of a connection substrate according to the invention is shown schematically. This connection substrate essentially consists of a substrate body 1 made of insulating material, for example LCP or another, preferably thermoplastic. In the top 1a this substrate body 1 are ring-shaped notches 2 introduced, for example by means of a stamp or by ablation with a laser beam. Through these ring-shaped notches 2 whose depth can be 50 to 200 μm, for example, are internal contact bumps 3 formed, the pitch of which corresponds to the contact spacing of a semiconductor component, so that flip-chip contacting is possible directly on the top of the connection substrate. For this purpose, the humps are on the top 3 internal contacts each applied in the form of a metal layer.

As in 1 is shown schematically, in this embodiment, through holes 5 between the top 1a and the bottom 1b of the substrate body, in which case the through holes 5 each in a notch 2 lead. About the metallization of these through holes and the outer wall of the bumps 3 becomes a direct conductive connection from the internal contacts 4 through the through holes 5 to the bottom 1b of the substrate body generated.

2 shows in a section the structure of internal contact bumps 3 , After the notches 2 and the through holes 5 by hot stamping or by means of laser radiation in the substrate body 1 are generated, the substrate body is coated with a metallization layer, which is partially removed again in a structuring process, so that the inner contact bumps are in each case on the circumference 3 a metal layer 6 , preferably a copper layer, remains while the outer walls of the notches 2 are freed from the metallization and thus act as insulation sections. To the top of the hump 3 is also a metallization to form the internal contacts 4 applied. There is also a solder layer, which is not specifically shown here. The through holes 5 have also been lined with a metal layer during the metallization process. The holes themselves can then be closed either with metal or with a plastic compound.

3 again shows a section through a schematically illustrated connection substrate 1 , with internal contact bumps on the top 3 with internal contacts 4 for flip-chip contacting with connections 17 of a semiconductor chip 7 or another component are formed. On the underside of the substrate body are in the same way by annular notches 8th each external contact hump 9 formed, which are also sunk into the surface of the substrate and an external contact on each tip 10 wear. This outside contact hump 9 are in their size and in their grid spacing to the connections of a circuit board 11 customized. The connection between the internal contacts 4 and the external contacts 10 takes place via the metallized through holes 5 and a corresponding trace structure 12 on the bottom 1b of the substrate body. The metallization and structuring of the conductor layers on the top and the bottom of the substrate body can be carried out in one process step.

4 shows a modification to 3 , In this case, the substrate body consists of a base substrate 21 , on the underside of which the external contact bumps 9 are arranged as in the previous example. On top of this base substrate 21 is however a first cusp layer 22 laminated in the inside contact hump 3 as shaped in the previous examples. This way the cusp layer 22 can be adapted even better to the properties, in particular the thermal expansion properties, of a component to be placed on it, for example to the properties of a semiconductor material.

5 shows a further modification, in which case the base substrate 21 not just a first layer of cusps on the top 22 , but also a second cusp on the bottom 23 , wearing. Thus the cusp layers 22 and 23 can be selected in different ways to match their contact partners, i.e. the first cusp layer 22 to a device material and the second bump layer 23 be adapted to the properties of a circuit board material. In 5 the possibility is further shown, conductor tracks on the top and bottom of the base substrate 21 apply and structure before the cusp layers 22 and 23 be laminated on. Thus penetrate the through holes 5 only the base substrate in each case 21 and are on the top with conductor tracks on the top 24 and on the underside with conductor tracks on the underside 25 connected, which in turn with metallizations 6 in the notches 2 respectively. 8th stay in contact.

For the connection substrates according to the 1 to 4 can conductors on the underside or on the top of a substrate body 31 each in groove-shaped trenches 32 be arranged in 6 are shown only schematically as short sections. Such trenches can also be used in the manufacture of the substrate, ie in the formation of the notches 2 by hot stamping or by laser structuring. Preferably in these trenches 32 the inclined side walls 33 and 34 metallized while the floor surfaces 35 and the top margins 36 are not metallized and serve as insulating sections. This way you can dig in a ditch 32 two conductor tracks are generated on opposite walls. The production is relatively simple, since after the metallization of the entire surface of the substrate body, including the trench walls, the surface areas 36 and the floor areas parallel to the surface 35 easily structured by means of a laser beam, ie can be freed from the metallization. For the sake of example only, size ratios that can be achieved with such a trench structure are given here. A ditch 32 can in the floor area 35 have a width b1 of 50 μm, while the trench spacing in the surface area can also have a width b2 of 50 μm. Also assume that the sloping side walls 33 and 34 Each occupying a width b3 of 25 μm, this technique can accommodate two conductor tracks over a total width of b4 = 150 μm. The depths of the trenches can also be approximately 50 μm in this example.

7 also shows schematically the design of a rectangular through hole narrowing on one side 42 , In a substrate body only indicated 41 is a rectangular through hole 42 , for example by hot stamping the substrate. Thereby, sloping side walls 43 . 44 . 45 and 46 generated by the side lengths c1 and d1 at the top are larger than the side lengths c2 and d2 on the underside. It should also be mentioned here that the top and bottom sides of the substrate body can also be interchanged, so that, for example, the larger hole width can optionally be provided on the chip side of the connection substrate or on the circuit board side.

After all-round metallization of the substrate body 41 and also the through hole 42 two opposite sides, for example sides 45 and 46, are then freed from the metallization, so that two side surfaces coated with metal and isolated from one another 43 and 44 remain. These then form two separate interconnect bushings from the top to the bottom of the substrate. Feedthroughs of this type can be provided in the substrate body where it is cheapest. Such a through hole in the region of a trench is advantageous, for example 32 according to 6 , For example, a conductor track 33 of 6 with a feed-through conductor track 43 and a trace 34 with a feed-through conductor track 44 get connected.

In the 8th and 9 are schematically possible configurations of the top of a connection substrate ( 8th ) and the bottom ( 9 ) shown. The schemes of 8th and 9 However, they are not correlated to one another, they are merely basic arrangement options for the respective connection elements of the substrate.

So shows 8th a series of internal contact bumps 3 as in 1 to 5 are shown. These each have an internal contact 4 , Conductor tracks partially run from these internal contact bumps 13 from, which with the appropriate design also like the conductor tracks 33 respectively. 34 ( 6 ) can be arranged in trenches. Two of these tracks each 13 lead to a rectangular through hole 42 according to 7 with through conductor tracks 43 and 44 ,

More internal contact humps 3 in 8th with internal contacts 4 are each with round through holes 5 like in the 1 to 4 connected. These through holes can be right next to the bumps 3 notched in the area of the ring-shaped one 2 be arranged. Others are on additional traces 14 with a through hole removed 5 connected.

9 shows a possible arrangement of a circuit board connection side in the cutout. Bumps are also provided on this page, namely the external contact bumps 9 with the external contacts 10 by annular notches 8th are formed. In this case, too, two types of through holes are shown, namely round through holes 5 that are immediately in the area of an annular notch 8th can be created, and rectangular through holes 42 that according to 7 are trained. These through holes are each connected to conductor tracks, for example pairs of conductor tracks 33 and 34 that according to 6 in a common ditch 32 are arranged. In 9 is shown as these two traces 33 . 34 with the two conductive side walls 43 and 44 a through hole are connected.

In the 10 to 12 further modifications of the connection substrate or the module according to the invention are shown schematically. 10 shows schematically a substrate body 51 , on the top of which there is an internal connection hump 53 in comparison with 2 not through ring-shaped indentations, but through extensive removal or deformation of the areas 52 below the surface level 55 are generated. In addition to the internal contact bumps 53 in this case only marginal areas remain 56 and a mezzanine 57 exist in the original amount. The inside contact hump 53 are then - after a previous basic metallization - with a solder layer 54 provided to form the solderable internal contacts.

Before applying the solder layer 54 the areas around the inner contact bumps are expediently 53 with a solder resist 55 covered ( 11 ) to ensure the necessary insulation distance between the individual bumps. This solder resist is produced and structured, for example, by spraying with subsequent laser structuring or by applying a light-sensitive layer with subsequent exposure. For applying the solder coating 54 known methods, such as screen printing, come into consideration.

12 shows again in section an inventive module, with a substrate body 61 the top to form internal contact bumps 63 is worn or deformed so that only marginal areas 66 stop. On these internal contact bumps 63 with their solder coating 64 becomes a semiconductor chip 7 about its connections 17 contacted in close spacing.

The bottom of the substrate body 61 is in the same way for the formation of external contact bumps 68 between the edge areas 67 largely worn out. But since the outside contact humps 68 have a larger grid spacing than the internal contact bumps to match the PCB connections 63 , can on the underside of the substrate body 61 further intermediate bridges 69 remain standing, on which, for example, conductor tracks or the like can be arranged. It should be noted that the design of the depressions between the individual bumps on the top or bottom of the substrate body can be any, depending on the deformation method used. In any case, the bumps are sunk below the original surface level of the substrate body, that is, below the upper surface level 65 and below the bottom surface level 70 of the substrate body.

Claims (26)

Electronic component module with a connection substrate and at least one electronic component ( 7 ) with the following features: - a flat substrate body ( 1 ; 21 . 22 . 23 ; 31 ; 411 ; 61 ) has on its flat top ( 1a ) a contact area with internal contacts ( 4 ) for the component ( 7 ) and on its underside ( 1b ) External contacts ( 10 ); - in the contact area are by partial removal ( 2 ) or deformation of the substrate material in each case recessed internal contact bumps ( 3 ; 53 ; 63 ) formed at a distance from the connections of the component, the tips of which are essentially aligned with the originally flat surface of the substrate body; - on the internal contact bumps ( 3 ; 53 ; 63 ) is an internal contact due to metallization ( 4 ; 54 ; 64 ) formed and provided with a solder layer; - The component is on the internal contacts ( 7 ) contacted in flip-chip technology and - by the internal contacts ( 4 ) extend conductor tracks ( 6 . 12 . 13 . 14 . 33 . 34 . 43 . 44 ) through holes ( 5 ; 42 ) to the external contacts ( 10 ) on the underside of the substrate body ( 1 ; 21 . 22 . 23 ; 31 ; 41 ). Module according to claim 1, wherein on the underside of the substrate body ( 1 ; 21 . 22 . 23 ; 63 ) by partial deduction ( 8th ) or deformation of the substrate material of recessed external contact bumps ( 9 ; 69 ) are formed, which are arranged at a distance from the circuit board connections and the external contacts ( 10 ) of the substrate. Module according to claim 1 or 2, wherein the inner contact bumps ( 3 ) and / or the external contact bumps ( 9 ) each with ring-shaped notches ( 2 ; 8th ) are formed in the substrate material. Module according to claim 3, wherein the annular notches ( 2 ; 8th ) on the inside ( 6 ) are metallized and are at least partially insulated on their outer sides. Module according to one of claims 1 to 4, wherein in the surface of the top and / or bottom of the substrate body ( 31 ) longitudinal trenches ( 32 ) are formed, the side walls ( 33 . 34 ) are at least partially provided with a metal layer to form conductor tracks. Module according to claim 5, wherein the metal layer in the bottom region ( 35 ) the trenches ( 32 ) is interrupted in order to provide two mutually insulated conductor tracks on the side walls ( 33 . 34 ) to build. Module according to one of claims 3 to 6, wherein through holes ( 5 ) with a round cross-section in the area of one notch ( 2 ; 8th ) are arranged and metallized on their peripheral walls to form conductor tracks. Module according to one of claims 1 to 6, wherein through holes ( 42 ) with a rectangular cross-section only on two opposite side walls ( 43 . 44 ) are metallized around two mutually insulated through conductor tracks from the top to the bottom of the substrate ( 41 ) to build. Module according to claims 6 and 8, wherein in each case rectangular through holes ( 43 ) in the area of longitudinal trenches ( 32 ) and each have a conductor track ( 33 . 34 ) on a side wall of the longitudinal trench ( 32 ) with a through conductor track ( 43 . 44 ) on a side wall of the through hole ( 42 ) is conductively connected. Module according to one of claims 1 to 9, wherein the substrate body made of a base substrate ( 21 ) and a bump layer laminated on the top and / or on the bottom ( 22 . 23 ) and where in the respective cusp layer ( 22 . 23 ) the internal contact bumps ( 3 ) or the external contact humps ( 9 ) are trained. The module of claim 10, wherein one on top of the base substrate ( 21 ) arranged first cusp layer ( 22 ) consists of a material whose thermal expansion properties match those of a component to be applied ( 7 ), preferably a semiconductor component. Module according to claim 10 or 11, wherein a on the underside of the base substrate ( 21 ) arranged second cusp layer ( 23 ) consists of a material whose thermal expansion behavior is comparable to that of a printed circuit board ( 11 ) is adjusted. Module according to one of claims 10 to 12, wherein below the laminated bump layer ( 22 . 23 ) a trace structure ( 24 ; 25 ) is arranged. Module according to one of claims 1 to 13, wherein the ratio of the height of a bump ( 3 ; 9 ) to the diameter of the solder joint is greater than 1, preferably greater than 1.3. Method for producing a module according to one of claims 1 to 14 with the following steps: a) in the surface of a film-shaped substrate body ( 1 ; 21 . 22 . 23 ; 31 ; 41 ; 51 ; 61 ) made of polymer material, at least on one side by partial removal or deformation of the surface, deeply arranged internal contact bumps ( 3 ; 53 ; 63 ) formed at a distance from the connections of components to be contacted, the tips of which are essentially aligned with the originally flat surface of the substrate body; b) between the top and the bottom of the substrate body ( 1 ; 21 . 22 . 23 ; 31 ; 41 ; 51 ; 61 ) through holes ( 5 ; 42 ) generated; c) by metallizing the top and bottom of the substrate body ( 1 ; 51 ; 61 ) and the through holes ( 5 ; 42 ) a conductor layer is created; d) through targeted structuring of the conductor layer, internal contacts ( 4 ; 54 ; 64 ) on the inside contact bumps on the top, outside contacts ( 10 ) on the underside and conductor tracks ( 6 . 12 . 24 . 25 . 33 . 34 . 43 . 44 ) to form electrically conductive connections between the internal contacts ( 4 ) and the external contacts ( 10 ) generated; e) the internal contacts ( 4 ; 54 ; 64 ) are coated with a solder material; and f) on the internal contacts ( 4 ) the component ( 7 ) and its connections ( 17 ) are soldered to the internal contacts. The method of claim 15, wherein in step a) also on the underside of the substrate body by removal or deformation of the substrate material in each case recessed external contact bumps ( 9 ) formed, the tips of which are essentially flush with the originally flat surface of the substrate body, and the outer contacts () in step c) 10 ) be generated. The method of claim 15 or 16, wherein the internal contact bumps ( 3 ) and / or the external contact bumps ( 9 ) are formed by approximately annular notches. Method according to one of claims 15 to 17, wherein the bumps ( 3 ; 9 ; 53 ; 63 ; 64 ) and the through holes ( 5 ; 42 ) are produced by hot stamping. Method according to one of claims 15 to 17, wherein the bumps ( 2 ; 8th ) and the through holes ( 5 ; 42 ) are generated using a laser beam. Method according to one of claims 15 to 19, wherein the structuring the metallization according to step c) using a laser beam. Method according to one of claims 15 to 20, wherein in step a) in the surface of the substrate body ( 31 ) groove-like trenches ( 32 ) with sloping side walls ( 33 . 34 ) are formed, which are metallized in step c), the bottom surface of the trenches (d) 35 ) and the border area ( 36 ) on the surface of the substrate body ( 31 ) is freed from the metal layer. Method according to one of claims 15 to 20, wherein in step a) through holes ( 42 ) are produced with a tapering rectangular cross-section, the side walls of the through holes also being metallized in step c) and two opposite side walls ( 45 . 46 ) the through holes in step d) are ready from the metal layer. Method according to one of claims 15 to 22, wherein before step e) the surface of the substrate body ( 51 ) into which the humps ( 53 ) surrounding areas with a solder resist layer ( 58 ) are covered and in step e) the solder material ( 54 ) on the humps ( 53 ) is applied. Method according to one of claims 15 to 23, wherein prior to step a) on a base substrate ( 21 ) top and / or bottom of a bump layer ( 22 . 23 ) is laminated on and in step a) the bumps ( 3 ; 9 ) each in the cusp layer ( 22 ; 23 ) be generated. The method of claim 24, wherein prior to laminating the bump layer ( 22 ; 23 ) one track structure each ( 24 ; 25 ) on the top or bottom of the base substrate ( 21 ) is produced. The method of claim 25, wherein the through holes ( 5 ) in the base substrate ( 21 ) are generated and a conductive connection from the through holes ( 5 ) to the internal contacts ( 4 ) or the external contacts ( 10 ) each with notches ( 2 ) in the cusp layer ( 22 ; 23 ) is produced.