DE102017205268A1 - Method for manufacturing a crystal body unit for a sensor device, method for producing a sensor device, system and method for detecting a measured variable and sensor device - Google Patents

Abstract

The invention relates to a method for manufacturing a crystal body unit (1100) for a sensor device. The method comprises a step of producing a material connection between an optically at least partially transparent carrier substrate (1115) and at least one crystal body (100) with at least one defect. The method also includes a step of treating the carrier substrate (1115) and / or the at least one crystal body (100). In this case, in the step of treating the at least one crystal body (100) and / or the carrier substrate (1115) is divided into individual segments.

Description

State of the art

The invention is based on a device or a method according to the preamble of the independent claims. The subject of the present invention is also a computer program.

For example, nitrogen defects in a diamond lattice, also referred to as NV centers (NV = Nitrogen Vacancy), can be applied in the field of sensor technology. By exciting the NV centers with light and microwave radiation, a magnetic field-dependent fluorescence of the same can be observed.

The DE 37 42 878 A1 describes an optical magnetic field sensor in which a crystal is used as the magnetic-sensitive optical component.

Disclosure of the invention

Against this background, with the approach presented here, a sensor device, a system, methods, furthermore a control device which uses at least one of the methods, and finally a corresponding computer program according to the main claims are presented. The measures listed in the dependent claims advantageous refinements and improvements of the independent claim device are possible.

According to embodiments, magnetic fields can be measured, in particular by utilizing crystal body defects or crystal lattice defects, and corresponding magnetic field sensors can be advantageously produced. For example, properties of crystal lattice defects or combined nitrogen-carbon defect centers in diamond (nitrogen vacancies in diamond, so-called NV centers) can be used for highly sensitive magnetic field sensors. In particular, for producing at least a part of such a sensor, a wafer bonding process or bonding process for firmly bonding a crystal body, for example a diamond crystal, with a mechanical support can be used. Thus, in particular, a method of integrating photonic diamond structures in magnetic sensors based on crystal lattice vacancies, for example NV centers in diamond, can be provided.

Advantageously, according to embodiments can be achieved in particular to stimulate a maximum number of crystal lattice defects with minimal light output. For example, a high sensitivity with minimum power requirement for light excitation can be realized. In order to achieve the highest possible integration density of components of such a sensor, among other things, established processes and strategies from MEMS technology (microelectromechanical systems) or microsystem technology can be used in a production method, such as a stacking of individual components and an integration of optical and electronic function blocks in a miniaturized sensor. Such a process from microsystem technology can be used in particular for integration of a crystal body, for example a diamond crystal, as a functional part for such a sensor. An inexpensive solution can be provided to process a crystal body with mass production processes. Also, an accurate and non-contact measurement or detection of measured variables, in particular of magnetic fields, can be made possible. A further advantage of the presented magnetic sensor technology is, inter alia, that even with strong magnetic fields, for example up to the Tesla range, even the smallest changes in the pico-tesla range can be detected, resulting in reliable and exact operation even in the presence of high interference fields allows.

• Herstellen einer stoffschlüssigen Verbindung zwischen einem optisch zumindest partiell transparenten Trägersubstrat und zumindest einem Kristallkörper mit zumindest einer Fehlstelle; und
• Behandeln des Trägersubstrats und/oder des zumindest einen Kristallkörpers, wobei im Schritt des Behandelns der zumindest eine Kristallkörper und/oder das Trägersubstrat in einzelne Segmente aufgeteilt wird.

A method for manufacturing a crystal body unit for a sensor device is presented, wherein the method has at least the following steps:

• Producing a cohesive connection between an optically at least partially transparent carrier substrate and at least one crystal body having at least one defect; and
• Treating the carrier substrate and / or the at least one crystal body, wherein in the step of treating the at least one crystal body and / or the carrier substrate is divided into individual segments.

The sensor device can be designed to detect a measured variable. The measured variable may be, for example, an external magnetic field, an electrical current, a temperature, a mechanical stress, a pressure and additionally or alternatively another measured variable. The crystal body may be, for example, diamond, silicon carbide (SiC) or hexagonal boron nitride (h-BN). For example, a defect may be a nitrogen defect in a diamond, a silicon defect in silicon carbide, or a vacancy color center in hexagonal boron nitride. In other words, a defect may be a lattice defect in a lattice structure of the crystal body. The crystal body unit can thus comprise the at least one crystal body with the at least one defect and at least one partial section of the body Have carrier substrate. In the step of manufacturing, the integral connection can be produced by wafer bonding or gluing, in particular wafer-to-wafer bonding or chip-to-wafer bonding. For example, in chip-to-wafer bonding, individual functional elements can be placed on a preprocessed wafer and used with this, for. B. by soldering, bonding or bonding, are connected. In the step of manufacturing, the at least one crystal body of a main surface of the support substrate may be arranged. The carrier substrate may be referred to as a mechanical carrier. In particular, the substrate may be designed as a wafer, in particular a silicon wafer. In one embodiment of the carrier substrate as a silicon wafer, for example, a further processing of the at least one crystal body with semiconductor technology processes and systems can be made possible. In the step of treating, at least two segments can thus be produced, wherein each segment can have at least one crystal body and a partial section of the carrier substrate. Thus, a cost-effective production of miniaturized crystal body units can be carried out with simple separation into segments.

According to one embodiment, the step of treating may be performed before and additionally or alternatively after the step of producing the integral connection. Such an embodiment offers the advantage that at least the at least one crystal body can be further processed in a highly miniaturized form simply, accurately and reliably.

Also, in the step of treating, a part of the at least one crystal body may be removed from the support substrate. In this case, an etching process and additionally or alternatively a grinding process or polishing process can be used. Such an embodiment offers the advantage that the at least one crystal body can be provided with suitable or required dimensions in a reliable and exact manner.

In addition, in the step of treating, the at least one crystal body may be patterned to produce integrated photonic structural elements in the at least one crystal body. Integrated photonic structural elements may include optical resonators, optical waveguide structures, antireflection structures, tapered structures or optical scattering gratings for coupling light, Bragg gratings, square structures in which light can be coupled in and coupled out on a bevelled side edge, or the like. Such an embodiment offers the advantage that with minimal light output, a maximum number of crystal lattice defects can be excited.

According to one embodiment, in the step of treating, an optical filter device may be arranged on the carrier substrate. In particular, an optical filter layer can be applied to a rear side or further main surface of the optically transparent carrier substrate. Such an embodiment offers the advantage that a further functional integration can already be achieved at the level of the crystal body unit.

Further, the method may include a step of forming the at least one crystal body on a growth substrate. Alternatively, a step of providing at least one generated crystal body on a growth substrate may be provided. In this case, the growth substrate can be removed from the at least one crystal body in a step of removal after the step of producing the cohesive connection. Such a removal step may be performed before or after the step of producing the integral connection. Optionally, in addition, a part of the at least one crystal body can be removed in the removal step. The removing step may be carried out using grinding or wet or dry chemical etching or polishing. Such an embodiment offers the advantage that even specially grown crystal bodies can be easily and safely used for the crystal body unit.

A method for producing a sensor device is also presented, wherein the method has at least the following steps:

Providing a crystal body unit fabricated according to an embodiment of the above method, a light source for irradiating the crystal body of the crystal body with excitation light, a high frequency means for exciting the crystal body with a high frequency signal, and detecting means for detecting at least one signal characteristic of a magnetic field dependent fluorescence signal from the crystal body in and / or on a first substrate and a second substrate; and
Bonding the first substrate and the second substrate together.

By executing the method, an embodiment of the following sensor device can be produced. In this case, a crystal body unit can be used or used, which is manufactured according to an embodiment of the aforementioned method. In the joining step, the first substrate and the second substrate can be bonded together in a material-locking manner.

According to an embodiment, in the step of providing, the first substrate may be provided with the light source, and the second substrate may be provided with the detection means, the crystal body unit, and the high-frequency means. Additionally or alternatively, the detection device may be formed in the second substrate, the crystal body unit may be disposed or formed on the second substrate, and additionally or alternatively, the high-frequency device may be disposed or formed on the second substrate. In particular, the crystal body unit can be arranged on a second substrate designed as a photodiode wafer. Such an embodiment offers the advantage that the sensor device can be manufactured in a simple, space-saving and cost-effective manner.

Also, in the step of providing, an optical filter device may be provided between the detection device and the crystal body or the crystal body unit. In this case, the filter device can be designed to filter out excitation light and to transmit the fluorescence signal to the detection device. Such an embodiment offers the advantage that the at least one signal property of the fluorescence signal can be detected in a simpler, more accurate and reliable manner.

• Bestrahlen des Kristallkörpers der Kristallkörpereinheit mit Anregungslicht;
• Beaufschlagen des Kristallkörpers mit dem Hochfrequenzsignal, wobei eine Frequenz des Hochfrequenzsignals variiert wird;
• Auswerten des magnetfeldabhängigen Fluoreszenzsignals von dem Kristallkörper ansprechend auf das Anregungslicht und das Hochfrequenzsignal, um zumindest eine Anregungsfrequenz des Hochfrequenzsignals zu ermitteln, bei der zumindest eine detektierte Signaleigenschaft des Fluoreszenzsignals eine vordefinierte Bedingung erfüllt; und

Furthermore, a method for detecting a measured variable is presented, wherein the method is executable in connection with an embodiment of a sensor device mentioned below, wherein the method has at least the following steps:

• Irradiating the crystal body of the crystal body unit with excitation light;
• Impinging the crystal body with the high-frequency signal, wherein a frequency of the high-frequency signal is varied;
• Evaluating the magnetic field dependent fluorescence signal from the crystal body in response to the excitation light and the radio frequency signal to determine at least one excitation frequency of the radio frequency signal, wherein at least one detected signal property of the fluorescence signal satisfies a predefined condition; and

Determining the measurand using the at least one excitation frequency of the high frequency signal.

This method can be implemented, for example, in software or hardware or in a mixed form of software and hardware, for example in a control unit.

The approach presented here also creates a control unit which is designed to carry out, to control or to implement the steps of the method presented here for detecting in corresponding devices. Also by this embodiment of the invention in the form of a control device, the object underlying the invention can be achieved quickly and efficiently.

For this purpose, the control unit can have at least one arithmetic unit for processing signals or data, at least one memory unit for storing signals or data, at least one interface to a sensor or an actuator for reading sensor signals from the sensor or for outputting control signals to the actuator and / or or at least a communication interface for reading or outputting data embedded in a communication protocol. The arithmetic unit may be, for example, a signal processor, a microcontroller or the like, wherein the memory unit may be a flash memory, an EPROM, an optical storage unit or a magnetic storage unit. The communication interface can be designed to read or output data wirelessly and / or by line, wherein a communication interface that can read or output line-bound data, for example, electrically or optically read this data from a corresponding data transmission line or output in a corresponding data transmission line.

In the present case, a control device can be understood as meaning an electrical device which processes sensor signals and outputs control and / or data signals in dependence thereon. The control unit may have an interface, which may be formed in hardware and / or software. In the case of a hardware-based design, the interfaces can be part of a so-called system ASIC, for example, which contains various functions of the control unit. However, it is also possible that the interfaces are their own integrated circuits or at least partially consist of discrete components. In a software training, the interfaces may be software modules that are present, for example, on a microcontroller in addition to other software modules.

In an advantageous embodiment, the control unit performs a control of at least one sensor device, more precisely the light source, the detection device and the high-frequency device of an embodiment of the aforementioned sensor device. For this purpose, the control unit can, for example, access the fluorescence signal from the detection device. The control unit can be designed to handle the Light source and the high-frequency device by means of control signals to control.

Also of advantage is a computer program product or computer program with program code which can be stored on a machine-readable carrier or storage medium such as a semiconductor memory, a hard disk memory or an optical memory and for carrying out, implementing and / or controlling the steps of the method according to one of the embodiments described above is used, especially when the program product or program is executed on a computer or a device.

• ein optisch zumindest partiell transparentes Trägersubstrat; und
• zumindest einen Kristallkörper mit zumindest einer Fehlstelle, wobei zwischen dem optisch zumindest partiell transparenten Trägersubstrat und dem zumindest einen Kristallkörper eine stoffschlüssige Verbindung hergestellt ist, wobei die Kristallkörpereinheit nach einer Ausführungsform des vorstehend genannten Verfahrens gefertigt ist.

A crystal body unit for a sensor device is also presented, wherein the crystal body unit has at least the following features:

• an optically at least partially transparent carrier substrate; and
• at least one crystal body having at least one defect, wherein between the optically at least partially transparent carrier substrate and the at least one crystal body, a material connection is made, wherein the crystal body unit is manufactured according to an embodiment of the above method.

• eine nach einer Ausführungsform des vorstehend genannten Verfahrens gefertigte Kristallkörpereinheit;
• eine Lichtquelle zum Bestrahlen des Kristallkörpers der Kristallkörpereinheit mit Anregungslicht;
• eine Hochfrequenzeinrichtung zum Beaufschlagen des Kristallkörpers mit einem Hochfrequenzsignal;
• eine Detektionseinrichtung zum Detektieren zumindest einer Signaleigenschaft eines magnetfeldabhängigen Fluoreszenzsignals von dem Kristallkörper;
• ein erstes Substrat, wobei zumindest die Lichtquelle in und/oder an dem ersten Substrat angeordnet ist; und
• ein zweites Substrat, wobei zumindest die Detektionseinrichtung in und/oder an dem zweiten Substrat angeordnet ist, wobei die Kristallkörpereinheit und die Hochfrequenzeinrichtung in und/oder an dem ersten Substrat oder dem zweiten Substrat angeordnet sind, wobei das erste Substrat und das zweite Substrat miteinander verbunden sind.

In addition, a sensor device is presented which has at least the following features:

• a crystal body unit made according to one embodiment of the above method;
• a light source for irradiating the crystal body of the crystal body unit with excitation light;
• a high-frequency device for applying a high-frequency signal to the crystal body;
• a detection device for detecting at least one signal characteristic of a magnetic-field-dependent fluorescence signal from the crystal body;
• a first substrate, wherein at least the light source is disposed in and / or on the first substrate; and
• a second substrate, wherein at least the detection device is arranged in and / or on the second substrate, wherein the crystal body unit and the high-frequency device are arranged in and / or on the first substrate or the second substrate, wherein the first substrate and the second substrate are interconnected are.

The detection device may be configured to optically and / or electrically detect the at least one signal characteristic of the fluorescence signal from the crystal body of the crystal body unit. The at least one signal property of the fluorescence signal from the crystal body of the crystal body unit may be a light intensity. Thus, the detection device can be designed to detect the at least one signal property by means of an optical evaluation via an intensity of the fluorescence signal or by means of an electrical evaluation via a so-called Photocurrent Detection of Magnetic Resonance (PDMR). The high frequency signal may be a microwave signal or other high frequency signal. The first substrate and the second substrate may, in an interconnected state, represent a monolithically integrated package, an encapsulated package, or the like. The first substrate and the second substrate may be bonded together in a material-locking manner.

According to one embodiment, the sensor device may comprise an optical filter device between the detection device and the crystal body or the crystal body unit. In this case, the filter device can be designed to filter out excitation light and to transmit the fluorescence signal to the detection device. Such an embodiment offers the advantage that the detection of the at least one signal property of the fluorescence signal can be made simpler, more accurate and more reliable.

• zumindest ein Exemplar einer Ausführungsform der vorstehend genannten Sensorvorrichtung; und
• eine Ausführungsform des vorstehend genannten Steuergerätes, wobei das Steuergerät signalübertragungsfähig mit der zumindest einen Sensorvorrichtung verbindbar oder verbunden ist.

A system for detecting a measured variable is also presented, wherein the system has at least the following features:

• at least one example of an embodiment of the aforementioned sensor device; and
• An embodiment of the above-mentioned control unit, wherein the control unit is signal transmission capable connected to the at least one sensor device or connected.

In the system, at least one example of an embodiment of the aforementioned sensor device can thus be used or used to detect a measured variable in conjunction with an embodiment of the aforementioned control device.

• 1 eine schematische Darstellung einer Stickstoff-Fehlstelle in einem Diamantgitter;
• 2 bis 7 Energieschemata und Diagramme zu Fluoreszenzeigenschaften gemäß Ausführungsbeispielen;
• 8 eine schematische Darstellung einer Ausrichtung einer Stickstoff-Fehlstelle in einem Diamantgitter;
• 9 ein Mikrowellenfrequenz-Fluoreszenz-Diagramm gemäß einem Ausführungsbeispiel;
• 10 eine schematische Schnittdarstellung einer Sensorvorrichtung gemäß einem Ausführungsbeispiel;
• 11 schematische Darstellungen zur Herstellung einer Kristallkörpereinheit gemäß einem Ausführungsbeispiel;
• 12 schematische Darstellungen zur Herstellung einer Kristallkörpereinheit gemäß einem Ausführungsbeispiel;
• 13 schematische Darstellungen zur Herstellung einer Kristallkörpereinheit gemäß einem Ausführungsbeispiel;
• 14 schematische Darstellungen zur Herstellung einer Kristallkörpereinheit gemäß einem Ausführungsbeispiel;
• 15 ein Ablaufdiagramm eines Verfahrens zum Fertigen gemäß einem Ausführungsbeispiel;
• 16 ein Ablaufdiagramm eines Verfahrens zum Herstellen gemäß einem Ausführungsbeispiel; und
• 17 ein Ablaufdiagramm eines Verfahrens zum Erfassen gemäß einem Ausführungsbeispiel.

Embodiments of the approach presented here are shown in the drawings and explained in more detail in the following description. It shows:

• 1 a schematic representation of a nitrogen defect in a diamond lattice;
• 2 to 7 Energy schemes and diagrams of fluorescence properties according to embodiments;
• 8th a schematic representation of an alignment of a nitrogen defect in a diamond lattice;
• 9 a microwave frequency fluorescence diagram according to an embodiment;
• 10 a schematic sectional view of a sensor device according to an embodiment;
• 11 schematic representations for producing a crystal body unit according to an embodiment;
• 12 schematic representations for producing a crystal body unit according to an embodiment;
• 13 schematic representations for producing a crystal body unit according to an embodiment;
• 14 schematic representations for producing a crystal body unit according to an embodiment;
• 15 a flowchart of a method for manufacturing according to an embodiment;
• 16 a flowchart of a method of manufacturing according to an embodiment; and
• 17 a flowchart of a method for detecting according to an embodiment.

In the following description of favorable embodiments of the present invention, the same or similar reference numerals are used for the elements shown in the various figures and similar acting, with a repeated description of these elements is omitted. Furthermore, exemplary embodiments are described below by way of example only with reference to nitrogen defects in a diamond lattice or diamond.

1 shows a schematic representation of a nitrogen defect 105 in a diamond lattice 100 or diamond 100 , The nitrogen defect 105 can also act as a nitrogen vacancy center 105 or NV center 105 be designated. A carbon atom is here by a nitrogen atom 110 replaced, with a directly adjacent carbon atom in the diamond lattice 100 is missing and thus the nitrogen defect 105 results.

2 to 7 show energy schemes and diagrams to fluorescence properties according to embodiments. This shows 2 an energy scheme 200 without high-frequency signal excitation or microwave excitation and without magnetic field excitation, excitation light hv 210, a fluorescence signal 220 and three states ³ A, ³ E, and ¹ A, and respective electron-occupy energy levels m _S = 0 and m _S = ± 1 for states ³ A and ³ E electrons.

3 shows a diagram 300 to the energy scheme 2 , In the diagram 300 is at the abscissa axis 302 for example, a microwave frequency in megahertz or MHz or gigahertz or Ghz and is plotted on the ordinate axis 304 a fluorescence is plotted in arbitrary units, one to the ordinate axis 304 parallel arrow 306 a rising magnetic field B symbolizes. Furthermore, in 3 four characteristic curves or graphs, for example 310 . 312 . 314 and 316 represented, which represent a fluorescence course for different strength magnetic fields. A first graph 310 represents a magnetic field with the strength 0 , B = 0; a second graph 312 represents, for example, a magnetic field with the magnitude of 2.8 mT; a third graph 314 represents, for example, a magnetic field with the magnitude of 5.8 mT; a fourth graph 360 For example, it represents a magnetic field of 8.3 mT. Minima of fluorescence are merely exemplary of the second graph 312 denoted by ω ₁ and ω ₂ . A mark 320 on the first graph 310 represents the facts from the energy scheme of 2, d , H. without magnetic field (B = 0) and without microwave excitation or a microwave frequency f ≠ 2.9 GHz.

4 shows a power scheme 400 with microwave excitation and without magnetic field excitation, where excitation light hv 210, a high frequency signal 430 or microwave radiation 430 and three states ³ A, ³ E and ¹ A, and respective energy levels ms = 0 and m _S = ± 1 for the states ³ A and ³ E with respect to electrons.

5 shows a diagram 500 to the energy scheme 4 , The diagram 500 in 5 corresponds to the diagram 3 except that a mark 520 on the first graph 310 the facts from the energy scheme of 4 represents, ie without magnetic field (B = 0) and with microwave excitation or a microwave frequency f = 2.9 GHz. The mark 520 is here in a range of a minimum or Fluorescence minimums of the first graph 310 arranged.

6 shows a power scheme 600 with microwave excitation and without magnetic field excitation, where excitation light hv 210, microwave radiation 430 and three states ³ A, ³ E and ¹ A, and respective energy levels ms = 0 and m _S = ± 1 for the states ³ A and ³ E with respect to electrons. Thus, states ³ E here have another energy level or two separate energy levels ms = + 1 and ms = -1.

7 shows a diagram 700 to the energy scheme 6 , The diagram 700 in 7 corresponds to the diagram 3 respectively. 5 except that two marks 720 and 725 on the second graph 312 the facts from the energy scheme of 6 represent, ie with a magnetic field (B ≠ 0) and with variable microwave excitation or a microwave frequency. The marks 720 and 725 are each in a range of a minimum or minimum fluorescence of the second graph 312 arranged. For example, a first mark 720 arranged in the region of a first minimum ω ₁ and is a second mark 725 arranged in the region of a second minimum ω ₂ .

With reference to the 2 to 7 In other words and in summary terms, energy schemes and diagrams are shown for operation of a magnetic field measurement via a fluorescence measurement with additional microwave excitation or an example of a measurement of magnetic fields. Nitrogen defects in diamond exhibit this in the 2 represented diagram or energy scheme 200 shown energy spectrum at room temperature. In the normal state, ie without microwaves and without a magnetic field, a nitrogen defect exhibits optical fluorescence in the red wavelength range or at a wavelength of 630 nm in the case of optical excitation. In addition to the optical excitation, radiation by the excitation light radiates 210 still microwave radiation 430 or the high-frequency signal 430 At 2,88 GHz, the fluorescence drops, since in this case the electrons are lifted from the level m _S = ± 1 of the state ³ A to the level m _S = ± 1 of the state ³ E and from there non-radiative recombine. In the case of an external magnetic field, there is a splitting of the level m _S = ± 1 (Zeeman splitting) and two minima, for example w ₁ and w ₂ or ω ₁ and ω ₂ , are shown when fluorescence is plotted over the frequency of the microwave excitation. in the fluorescence spectrum whose frequency spacing is proportional to the magnetic field strength B. A magnetic field sensitivity is defined by a minimum resolvable frequency shift and can reach up to 1 pT / √Hz.

This method is also referred to as ODMR (Optically Detected Magnetic Resonance). In this case, if the microwave frequency coincides with the energy gap between the state ³ A ms = 0 and the level m _S = ± 1, the fluorescence will break. With an external magnetic field, the level splits m _S = ± 1 and there are two defined microwave frequencies at which the fluorescence decreases or minima are present. The frequency spacing is proportional to the magnetic field B.

8th shows a schematic representation of an alignment of a nitrogen defect 105 in a diamond lattice 100 , The diamond lattice corresponds or resembles this 100 from the diamond grid 1 , In the presentation of 8th By way of example only, four possible orientations of the nitrogen vacancy are 105 along each one of four crystal axes 801 . 802 . 803 and 804 starting from the nitrogen atom 110 illustrated. So can the nitrogen defect 105 from the nitrogen atom 110 viewed from along a first crystal axis 801 , along a second crystal axis 802 , along a third crystal axis 803 or along a fourth crystal axis 804 be aligned or arranged. Furthermore, an external magnetic field B or its direction is symbolically represented by an arrow.

9 shows a microwave frequency fluorescence diagram 900 according to an embodiment. In the diagram 900 is at the abscissa axis 302 for example, a microwave frequency is plotted and is on the ordinate axis 304 a fluorescence is applied in arbitrary units. The diagram is similar 900 a subsection of one of the diagrams described above. Further, in the diagram 900 for example only four pairs 901 . 902 . 903 and 904 drawn by fluorescence minima. There is a correlation between each of the pairs 901 . 902 . 903 and 904 of fluorescence minima and possible alignment of the nitrogen vacancy along one of the four crystal axes 8th , There is a correlation between a first pair 901 of fluorescence minima and an orientation of the nitrogen vacancy from the nitrogen atom along the first crystal axis, between a second pair 902 of fluorescence minima and an alignment of the nitrogen vacancy from the nitrogen atom along the second crystal axis, between a third pair 903 of fluorescence minima and an orientation of the nitrogen vacancy from the nitrogen atom along the third crystal axis and between a fourth pair 904 of fluorescence minima and an orientation of the nitrogen vacancy from the nitrogen atom viewed along the fourth crystal axis.

With reference to 8th and 9 In summary, it should be noted that in a crystal unit cell of diamond or in the diamond lattice 100 the nitrogen defect 105 has four ways to get in the diamond grid 100 or to arrange or align the crystal lattice. As an angle between the magnetic field direction and the respective crystal axis 801 . 802 . 803 and 804 for every crystal axis 801 . 802 . 803 and 804 is different, it comes to different strong frequency splittings in the nitrogen vacancies 105 , depending on the respective orientation. This leads to the up to four matched pairs 901 . 902 . 903 and 904 of fluorescence minima or fluorescence dips in the fluorescence spectrum. By evaluating the frequency spacings for each orientation, magnetic field direction and the amount of magnetic field strength of the external magnetic field B can be extracted.

10 shows a schematic sectional view of a sensor device 1000 according to an embodiment. The sensor device 1000 is designed to detect in particular a magnetic field as a measured variable.

The sensor device 1000 has a first substrate 1010 , a second substrate 1020 , a crystal body 100 , a light source 1030 , a high-frequency device 1040 and a detection device 1050 on. The crystal body 100 or the diamond lattice corresponds or resembles the crystal body or diamond lattice of one of the figures described above. Here is the crystal body 100 Part of an in 10 not explicitly provided with reference numerals crystal body unit, which is described in more detail with reference to the following figures. According to the in 10 illustrated embodiment, the sensor device 1000 Further, an optical filter device 1060 on.

The first substrate 1010 according to the in 10 embodiment shown, the light source 1030 on. In particular, the light source 1030 in the first substrate 1010 formed or arranged. The light source 1030 is formed to the crystal body 100 to be irradiated with excitation light. The light source 1030 is embodied, for example, as an LED (light-emitting diode) or a VCSEL (vertical-cavity surface-emitting laser). At the first substrate 1010 is it according to the in 10 illustrated embodiment to an LED wafer, wherein the light source 1030 as an LED is executed.

The second substrate 1020 according to the in 10 shown embodiment, the detection device 1050 on. In this case, the detection device 1050 in the second substrate 1020 structured, shaped or arranged. The detection device 1050 is designed to at least one signal property of a magnetic field-dependent fluorescence signal from the crystal body 100 to detect. The second substrate 1020 is formed of silicon, for example. The detection device 1050 is designed as a photodiode, in particular a silicon photodiode. Furthermore, according to the in 10 illustrated embodiment of the second substrate 1020 the crystal body 100 , the high-frequency device 1040 and the optical filter device 1060 arranged.

The crystal body 100 the crystal body unit has at least one defect. Here is the crystal body 100 according to the in 10 shown embodiment designed as a diamond lattice and has at least one nitrogen defect. The high-frequency device 1040 is formed to the crystal body 100 to apply a high-frequency signal. The optical filter device 1060 is configured to filter out excitation light and the fluorescence signal to the detection device 1050 pass. The optical filter device 1060 is here between the crystal body 100 and the detection device 1050 arranged. The high-frequency device 1040 is laterally spaced from the crystal body 100 , the optical filter device 1060 and the detection device 1050 on the second substrate 1020 arranged.

The first substrate 1010 and the second substrate 1020 are connected. In particular, the first substrate 1010 and the second substrate 1020 cohesively connected to each other. Here is a gap between the light source 1030 and the crystal body 100 arranged.

In other words, the sensor device 1000 designed as a monolithically integrated magnetic sensor for magnetic field detection for non-contact current measurement. The light source 1030 is embodied as an LED chip or, alternatively, a VCSEL laser chip mounted on a Si photodiode as a detection device 1050 is bonded. On the detection device 1050 is the optical filter device 1060 arranged to filter the excitation light, then a with NV centers or nitrogen vacancies offset diamond layer as a crystal body 100 the crystal body unit. At the edge of the detection device 1050 is a high-frequency strip antenna as a high-frequency device 1040 for coupling microwave radiation. 10 thus shows a possible realization for the sensor device 1000 as a monolithically integrated sensor element based on a crystal grain unit having a NV offset diamond crystal as a crystal body 100 , For monolithic integration, the first substrate 1010 , For example, an LED chip or VCSEL chip, which usually consists of a III / V semiconductor material or designed as a III / V compound semiconductor is on the second substrate via chip-to-wafer bonding or chip-to-chip bonding 1020 be bonded, which the other elements of the sensor device 1000 , ie crystal body unit with crystal body 100 or diamond layer, optical filter device 1060 , Detection device 1050 and radio frequency equipment 1040 having. Here, for example, the detection device 1050 in the second substrate 1020 structured. This has p-doped and n-doped regions, which can be structured, for example, by ion implantation using shadow masks. Possible embodiments of the optical filter device 1060 or optical filter layer are z. As dielectric filters, microcavities with semi-transparent metal mirrors, dye filters or plasmonic filters. The crystal body unit with the crystal body 100 can as a separately manufactured component on the second substrate 1020 be upset. The high-frequency device 1040 or microwave antenna can as a metallic stripline on the second substrate 1020 be executed.

11 shows schematic representations for the preparation of a crystal body unit 1100 according to an embodiment. These are in 11 5 shows, by way of example only, five partial representations A, B, C, D and E, each of the partial representations A, B, C, D and E representing a different manufacturing state. Exactly shows 11 a diamond-to-wafer bonding process for the heteroepitactically grown diamond on silicon.

In the partial view A of 11 is a crystal body 100 For example, diamond, on a main surface of a growth substrate 1105 shown. In the crystal body 100 For example, it is diamond produced by chemical vapor deposition (CVD). The growth substrate 1105 is formed of silicon, for example. In the partial view B of 11 is also a carrier substrate 1115 or carrier wafer shown. The carrier substrate 1115 is here with the crystal body 100 and the growth substrate 1105 aligned and with the crystal body 100 brought into contact. In the partial view C of 11 is or is a cohesive compound, here a wafer bond or a wafer compound under the action of pressure and temperature, between the crystal body 100 and the carrier substrate 1115 produced. Thus, the crystal body 100 between the carrier substrate 1115 and the growth substrate 1105 arranged. In the partial view D of 11 become the growth substrate 1105 and part of the crystal body 100 removed, for example, by reactive ion etching (RIE) or alternatively polishing or grinding. Thus, for example, a re-etching of the growth substrate 1105 and optionally part of the crystal body 100 , In the partial representation E of 11 is the crystal body unit 1100 shown in an at least partially manufactured state. The crystal unit 1100 here has the crystal body 100 or remaining portion of the crystal body 100 and the carrier substrate 1115 on.

With reference to the partial representations A, B, C, D and E of 11 It should be noted that when using CVD diamond as the crystal body 100 , grown for example via heteroepitaxy on silicon as a growth substrate 1105 Wafer-to-wafer bonding process for bonding to the carrier substrate 1115 can be used, where appropriate, the growth substrate 1105 can be removed before or after bonding via grinding or wet or dry chemical etching. Also, you can use parts of the crystal body 100 since a defect density in the diamond crystal at the interface between crystal bodies 100 and growth substrate 1105 may be present and from the surface with increasing layer thickness continues to decrease.

12 shows schematic representations for the production of a crystal body unit according to an embodiment. These are in 12 only four partial representations A, B, C and D are shown by way of example, wherein each of the partial representations A, B, C and D represents a different manufacturing state. Exactly shows 12 a diamond chip-to-wafer bonding process, in which single crystal diamonds with a mechanical support substrate 1115 get connected.

In the partial view A of 12 is a carrier substrate 1115 with an adhesive layer 1205 shown. The adhesive layer 1205 is on a major surface of the carrier substrate 1115 applied. According to one embodiment, the adhesive layer 1205 be optional. In the partial view B of 12 is additionally a crystal body 100 shown. In the crystal body 100 it is a so-called HPHT diamond (HPHT = High Pressure High Temperature, high pressure high temperature). The crystal body 100 is aligned and with the carrier substrate 1115 , here by means of the adhesive layer 1205 , cohesively bonded, in particular bonded under the action of pressure and temperature. In the case of the HPHT diamond crystal body 100 whose size may be, for example, 5 × 5 mm, a chip-to-wafer bonding method can be used to produce the integral connection in which individual crystal bodies 100 on the carrier substrate 1115 to be glued. In the partial view C of 12 a repetition of the process shown in the partial view B is shown. This is another crystal body 100 on the carrier substrate 1115 glued. In the partial view D of 12 is a plurality of crystalline bodies 100 on the second substrate 1115 glued.

13 shows schematic representations for the preparation of a crystal body unit 1100 according to an embodiment. These are in 13 merely by way of example shows six partial representations A, B, C, D, E and F, wherein each of the partial representations A, B, C, D, E and F represents a different manufacturing state. Exactly shows 13 a structuring of diamond to segments and singulation, so that the composite of carrier substrate 1115 having a smaller diamond segment has a size that enables a chip-to-wafer bonding process.

In the partial view A of 13 is a crystal body 100 in the form of diamond on a major surface of the carrier substrate 1115 shown in a side view or sectional view. The carrier substrate 1115 is here optically transparent. In the partial view B of 13 is a plan view of the composite of crystal body 100 and carrier substrate 1115 shown from the partial view A. In the partial view C of 13 is shown in a side view or sectional view, as sections of the crystal body 100 are removed to a plurality of individual crystal bodies 100 to create. Such a diamond structuring can be carried out, for example, photolithographically with subsequent oxygen plasma etching. In the partial view D of 13 is a plan view of the composite of crystal bodies 100 and carrier substrate 1115 shown from the partial view C. In the partial representation E of 13 is a separation of the carrier substrate 1115 with the diamond structure or the crystal bodies 100 For example, by wafer sawing or the like, into individual crystal body units 1100 shown. In the partial view F of 13 is an application of crystal body units 1100 from partial representation E to a preprocessed target substrate, for example the second substrate 1020 out 10 shown. The second substrate 1020 is formed of silicon. In the second substrate 1020 are a plurality of detection devices 1050 formed or arranged in the form of photodiodes. For example, an optical filter layer is further applied to each photodiode. It will be at every detection device 1050 a crystal body unit 1100 applied or arranged, for example by means of a chip-to-wafer bond.

With reference to the partial views A, B, C, D, E and F of 13 It should be noted that use of such a mechanical support or carrier substrate 1115 a targeted restructuring of the diamond or crystal body 100 allows, for example, for purposes mentioned below. It can be a splitting of the crystal body 100 into individual segments or a plurality of crystal bodies 100 on the carrier substrate 1115 take place, each segment having an edge of exposed carrier substrate 1115 around the crystal body 100 around and the segments plus edge, wise are suitable for a pick-and-place method. Also, a structuring of the diamond or crystal body 100 via plasma etching or polishing process for generating photonic structures (optical resonators, optical waveguide structures, antireflective structures, etc.) take place.

14 shows schematic representations for the preparation of a crystal body unit 1100 according to an embodiment. These are in 14 5 shows, by way of example only, five partial representations A, B, C, D and E, each of the partial representations A, B, C, D and E representing a different manufacturing state. Exactly shows 14 an embodiment which of that 13 corresponds except that on the carrier substrate 1115 additionally an optical filter device 1060 is arranged in the form of an optical filter layer or is. In other words, the embodiments correspond to each other except that in 14 prior to singulation on a backside of the optically transparent mechanical support substrate 1115 an optical filter layer is applied.

Here, the partial view A of 14 the partial view A from 13 , the partial view B corresponds to 14 the partial view C from 13 , the partial representation D corresponds to 14 the partial view E off 13 and is similar to the partial representation E of 14 the partial view F off 13 , In the partial view C of 14 shown that the optical filter device 1060 in the form of an optical filter layer on another main surface of the carrier substrate 1115 is arranged or is, wherein the further main surface of a main surface of the carrier substrate 1115 is turned away, at the the crystal body 100 are arranged.

In order to facilitate integration for a NV measurement system required components, thus part of the required functions, such. As the optical filter layer, after the diamond transfer to the back of the optically transparent support substrate 1115 be applied.

With reference to the 11 to 14 It should be noted that crystal bodies 100 corresponds or resembles the crystal body or diamond lattice of any of the figures described above.

15 shows a flowchart of a method 1500 for manufacturing according to an embodiment. The procedure 1500 is executable to to manufacture a crystal body unit for a sensor device. More precisely, the procedure is 1500 executable to manufacture the crystal body unit of any one of the above figures or a similar crystal body unit.

The procedure 1500 to finish has a step 1510 producing a cohesive connection between an optically at least partially transparent carrier substrate and at least one crystal body having at least one defect. The procedure 1500 to finish also has a step 1520 treating the carrier substrate and / or the at least one crystal body. It is in the step 1520 treating the at least one crystal body and / or the carrier substrate into individual segments.

According to one embodiment, the step is 1520 treating before and / or after the step 1510 the manufacturing of cohesive connection executable. In particular, in the step 1520 when treating a portion of the at least one crystal body away from the support substrate, the at least one crystal body is patterned to produce integrated photonic structure elements in the at least one crystal body, and / or an optical filter device is disposed on the support substrate.

According to a further embodiment, the method 1500 to make also a step 1530 of creating and a step 1540 of removing. In step 1530 of generating, the at least one crystal body is produced on a growth substrate. The step 1530 the generating is before the step 1510 the manufacturing of cohesive connection executable. In step 1540 the removal, the growth substrate is removed from the at least one crystal body. This is the step 1540 removing after the step 1510 the manufacturing of cohesive connection executable.

16 shows a flowchart of a method 1600 for manufacturing according to an embodiment. The procedure 1600 for manufacturing to make a sensor device. More precisely, the procedure is 1600 for manufacturing, to produce a sensor device which corresponds or resembles the sensor device of any of the above figures.

In one step 1610 of providing are in the process 1600 for making one according to the method 15 or a similar method fabricated crystal body unit, a light source for irradiating the crystal body of the crystal unit with excitation light, a high frequency device for applying the crystal body with a high frequency signal and a detection device for detecting at least one signal property of a magnetic field dependent fluorescence signal from the crystal body in and / or on a first substrate and provided a second substrate. The following will be in one step 1620 connecting the first substrate and the second substrate connected to each other, in particular cohesively connected to each other.

According to one embodiment, in step 1610 providing the first substrate with the light source, and providing the second substrate with the detection means, the crystal body unit and the high-frequency means. Additionally or alternatively, in step 1610 of providing the detection device in the second substrate, the crystal body unit is arranged or formed on the second substrate and / or the high-frequency device is arranged or formed on the second substrate.

In addition, according to an embodiment in step 1610 providing an optical filter device between the detection device and the crystal body or the crystal body unit. The filter device is designed to filter out excitation light and to transmit the fluorescence signal to the detection device. In addition, according to an embodiment in step 1610 providing a magnetization device for generating a reference magnetic field. In this case, the reference magnetic field has a predefined property. By the reference magnetic field, the at least one signal property of the fluorescence signal can be influenced.

17 shows a flowchart of a method 1700 for detecting according to an embodiment. The procedure 1700 to capture is executable to capture a metric. Here is the procedure 1700 for detecting in conjunction with the sensor device of any of the above figures or a similar sensor device executable.

In one step 1710 the irradiation is in the process 1700 irradiated with excitation light for detecting the crystal bodies of the crystal body unit. In step 1720 of the impingement, the crystal body is supplied with the high-frequency signal. It is in the step 1720 the loading of a frequency of the high frequency signal varies. The step 1710 of irradiating and the step 1720 the loading can be carried out at least partially simultaneously. The step 1710 of irradiating and the step 1720 of Applying can be carried out continuously.

The following will be in one step 1730 evaluating the magnetic field dependent fluorescence signal from the crystal body in response to that in the step 1710 the irradiation generated excitation light and in the step 1720 the high-frequency signal generated by the application is evaluated in order to determine at least one excitation frequency of the high-frequency signal, in which at least one detected signal property of the fluorescence signal fulfills a predefined condition. The following will be in one step 1740 determining the measured variable using the at least one determined excitation frequency of the high-frequency signal. This is the step 1730 of the evaluation and the step 1740 determining cyclically or sequentially repeatable.

With reference to the figures described above, embodiments and background and advantages of exemplary embodiments are described below in summary and in other words and / or briefly presented.

In the field of sensor technology, there is a trend towards miniaturization while at the same time increasing performance. However, development can be differentiated into innovations that aim to increase existing sensor solutions through evolutionary approaches in their costs and performance, and approaches that exploit new principles of action and thus significantly higher performance gains than the first-mentioned evolutionary approach can, but mostly to higher costs. For this reason, for example, the path of market introduction of such sensor products is often via high-performance applications, and only after a certain evolutionary development time mass applications with higher cost pressure are addressed.

In magnetic field sensors, one sensitive sensor technology available is the use of superconducting quantum interference devices (SQUIDS) to resolve single magnetic flux quanta. This can be realized applications such. As the magnetoencephalography with localized measurement of brain activity based on the signal currents generated in the neurons and by induced magnetic fields. In this case, a resolution capacity of the magnetic sensors of a few pico-Tesla (pT) is required. Unlike SQUIDS is in the sensor device 1000 no need for cooling below the superconducting transition temperature, which is below 63K for most superconducting materials, the temperature of liquid nitrogen.

The sensor device 1000 represents a sensor technology, which can be operated at room temperature and has a high sensitivity, since a technical realization of devices, for example, for localized, non-contact brainwave measurement due to the elimination of a complex cooling with appropriate thermal insulation measures significantly simplified. Likewise, there is the sensor device 1000 no need to implement three identical magnetic field sensors for each of the three spatial directions for a magnetic field vector determination. A magnetic field vector determination with a single sensor element as in the sensor device 1000 can significantly reduce the expense of a magnetic field vector measuring system. The measurement of magnetic field vectors offers the additional advantage that, given a known direction of the magnetic field to be measured, all other stray fields from other directions could be eliminated in part via a corresponding evaluation algorithm. Other applications such as high-precision, non-contact current measurement on printed conductors or cables can also be realized in this way.

NV centers 105 sensitive to external magnetic fields. Experimentally, sensitivities of 1 pT with a sampling rate of 1 kHz could be detected and can thus penetrate into a range that conventionally can only be achieved with nitrogen-cooled, superconducting SQUIDS. The sensor device 1000 or an NV measuring system can be minimized in terms of size and power consumption while maintaining a high sensitivity.

A sensitivity of the sensor device 1000 or an NV magnetic field sensor in particular depends on an NV doping concentration in the diamond or crystal body 100 , of a homogeneity and intensity of the excitation light 210 for generating the NV fluorescence in the diamond crystal 100 as well as the homogeneity and intensity of the microwave excitation 430 from. To achieve maximum sensitivity, should have a maximum number of NV centers 105 in the diamond 100 be excited visually. This results in a given absorption cross section and relaxation times of the excited states in the NV center 105 a required light output of, for example, about 10fW per NV center 105 , Furthermore, the sensitivity depends on a collected fluorescent light output in order to achieve the highest possible signal / noise ratio in the photodetector or the detection device 1050 which, in turn, is made possible by a number of the excited NV centers 105 and thus the density of NV centers 105 in the diamond 100 depends. However, it would come at too high NV concentration in the diamond crystal 100 to a transition from an isolated behavior of each NV center 105 to an overlap of the wave functions of electrons of neighboring NV centers 105 which would affect the sensitivity. At some point, therefore, there is an increase in the fluorescence intensity 220 only to be achieved by increasing the volume of diamond excited. However, this would require a stronger light source, the excitation power per NV center 105 to keep constant.

An optimum for the NV concentration is, for example, in the range of 100 ppB, although it is also possible to image functional NV sensors in the range from 10 ppB to 10 ppm. At this concentration, there is still no overlap of quantized electron states in the NV center 105 and there is no energy broadening of the allowed states, and thus smearing of the fluorescence dips as well as sensitivity losses can be prevented. Due to the absorption behavior of the NV-doped diamonds 100 a uniform "illumination" of all NV centers 105 to ensure optimum thickness of the diamond crystal 105 in the case of the optimum doping concentration at 500 μm, however, depending on the NV concentration, it may be in the range between 100 μm and 1 mm, for example. This in turn allows a surface-related light output for the homogeneous excitation of all NV centers 105 in the diamond 100 with superficial irradiation, which, considering the reflection due to the high refractive index jump between air and diamond, is about 10 mW / 10000 μm ² . If there are limits to the available light output (eg 10 mW for high-power LEDs) due to the selection of available light sources, the desired compliance with certain laser protection classes and certain requirements for the power consumption of the entire system, a diamond surface can be limited to 100 μm edge length be. In this case, larger areas could otherwise not be stimulated sufficiently strongly despite an optimized and homogeneous light coupling, for example. The crystal body unit 1100 makes it possible to connect such small functional units to a target substrate via currently available pick-and-place or chip-to-wafer bonding methods. Thus, a cost effective solution can be provided, the diamond 100 or crystal body 100 to structure with processes suitable for mass production.

A production of photonic structures is briefly explained below. With a limitation of an available light output is also a diamond volume, which can be constantly illuminated, and thus a number of NV centers 105 due to limited maximum NV concentration and absorption in the diamond 100 limited. This, and thus also a limit on a maximum number of NV centers involved in the measuring process 105 can by using optical waveguide and resonator structures or a simple faceted coupling into the crystal body 100 to be bypassed. Such structures, established under the heading of integrated photonics in semiconductor technology, can enable more NV centers to be used with the same light output 105 can be stimulated by free-jet excitation. Thus, a sensitivity of such a measuring system or such a sensor device 1000 which scales with the square root of N, where N is a number of participating NV centers 105 represents increased. As photonic structures, for example, the following optical structures are conceivable: taper structures or optical scattering gratings for coupling the excitation light 210 ; Bragg grating; simple square structures in which on a bevelled side edge of the excitation light 210 and / or the fluorescence signal 220 can be coupled and disconnected. By the use of a mechanical carrier substrate presented here 1115 for diamond processing, a high integration of individual components of the sensor device 1000 or the NV measuring system and a cost-effective patterning of diamond 100 or crystal body 100 with semiconducting and mass production processes.

If an exemplary embodiment comprises a "and / or" link between a first feature and a second feature, then this is to be read so that the embodiment according to one embodiment, both the first feature and the second feature and according to another embodiment either only first feature or only the second feature.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 3742878 A1 [0003]

Claims (13)

A method (1500) of fabricating a crystal body unit (1100) for a sensor device (1000), the method (1500) comprising at least the following steps: Producing (1510) a bonded connection between an optically at least partially transparent carrier substrate (1115) and at least one crystal body (100) with at least one defect (105); and Treating (1520) the carrier substrate (1115) and / or the at least one crystal body (100), wherein in step (1520) of treating, the at least one crystal body (100) and / or the carrier substrate (1115) is divided into individual segments. Method (1500) according to Claim 1 characterized in that the step (1520) of treating is performed prior to and / or after the step (1510) of establishing the integral connection. Method (1500) according to one of the preceding claims, characterized in that in the step (1520) of the treatment a part of the at least one crystal body (100) is removed from the carrier substrate (1115). Method (1500) according to one of the preceding claims, characterized in that, in the step (1520) of the treatment, the at least one crystal body (100) is patterned to produce integrated photonic structural elements in the at least one crystal body (100). Method (1500) according to one of the preceding claims, characterized in that in step (1520) of the treatment, an optical filter device (1060) is arranged on the carrier substrate (1115). The method (1500) according to one of the preceding claims, characterized by a step (1530) of producing the at least one crystal body (100) on a growth substrate (1105), wherein the growth substrate (1105) after the step (1510) of producing the material bond in a step (1540) of removing from the at least one crystal body (100). A method (1600) for manufacturing a sensor device (1000), the method (1600) comprising at least the following steps: Providing (1610) a crystal body unit (1100) produced by the method (1500) according to any one of the preceding claims, a light source (1030) for irradiating the crystal body (100) of the crystal body unit (1100) with excitation light (210), a radio frequency device (1040) for applying the crystal body (100) with a high frequency signal (430) and a detection device (1050) for detecting at least one signal property of a magnetic field dependent fluorescence signal (220) from the crystal body (100) in and / or at a first substrate (1010) and a second one Substrate (1020); and Bonding (1620) the first substrate (1010) and the second substrate (1020) together. Method (1600) according to Claim 7 characterized in that in step (1610) of providing, the first substrate (1010) is provided with the light source (1030) and the second substrate (1020) is provided with the detection means (1050), the crystal body unit (1100) and the radio frequency device (1040 ), and / or wherein the detection device (1040) is formed in the second substrate (1020), the crystal body unit (1100) is arranged or formed on the second substrate (1020), and / or the high-frequency device (1040) is attached to the second Substrate (1020) is arranged or formed. Method (1600) according to one of Claims 7 to 8th characterized in that in the step (1610) of providing, an optical filter means (1060) is provided between the detection means (1050) and the crystal body (100) or the crystal body unit (1100), the filtering means (1060) being adapted to excite light (210) and pass the fluorescent signal (220) to the detection device (1050). A crystalline body unit (1100) for a sensor device (1000), the crystal body unit (1100) having at least the following features: an optically at least partially transparent carrier substrate (1115); and at least one crystal body (100) having at least one defect (105), wherein between the optically at least partially transparent carrier substrate (1115) and the at least one crystal body (100) is made a material connection, wherein the crystal body unit (1100) according to the method ( 1500) according to one of Claims 1 to 6 is made. A sensor device (1000) having at least the following features: a crystal body unit (1100) according to Claim 10 ; a light source (1030) for irradiating the crystal body (100) of the crystal body unit (1100) with excitation light (210); radio frequency means (1040) for applying a high frequency signal (430) to the crystal body (100); a detection device (1050) for detecting at least one signal characteristic of a magnetic-field-dependent fluorescence signal (220) from the crystal body (100); a first substrate (1010), wherein at least the light source (1030) is disposed in and / or on the first substrate (1010); and a second substrate (1020), wherein at least the detection device (1050) is arranged in and / or on the second substrate (1020), the crystal body unit (1100) and the high-frequency device (1040) in and / or on the first substrate (1020). 1010) or the second substrate (1020), wherein the first substrate (1010) and the second substrate (1020) are bonded together. Sensor device (1000) according to Claim 11 characterized by optical filter means (1060) between the detection means (1050) and the crystal body (100) or the crystal body unit (1100), the filtering means (1060) being adapted to filter out excitation light (210) and to emit the fluorescence signal (220) the detection device (1050) pass. A method (1700) for detecting a measured quantity, the method (1700) being used in conjunction with the sensor device (1000) according to one of the Claims 11 to 12 wherein the method (1700) comprises at least the following steps: irradiating (1710) the crystal body (100) of the crystal body unit (1100) with excitation light (210); Applying (1720) the crystal body (100) to the high frequency signal (430), wherein a frequency of the high frequency signal (430) is varied; Evaluating (1730) the magnetic field dependent fluorescence signal (220) from the crystal body (100) in response to the excitation light (210) and the radio frequency signal (430) to determine at least one excitation frequency of the radio frequency signal (430) at the at least one detected signal property of the fluorescence signal (220) satisfies a predefined condition; and determining (1740) the measurand using the at least one excitation frequency of the high frequency signal (430).

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