DE102014213218A1 - Sensor with sacrificial anode - Google Patents
Sensor with sacrificial anode Download PDFInfo
- Publication number
- DE102014213218A1 DE102014213218A1 DE102014213218.5A DE102014213218A DE102014213218A1 DE 102014213218 A1 DE102014213218 A1 DE 102014213218A1 DE 102014213218 A DE102014213218 A DE 102014213218A DE 102014213218 A1 DE102014213218 A1 DE 102014213218A1
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- Prior art keywords
- leadframe
- sensor
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- intermediate layer
- contacting
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- 230000001419 dependent effect Effects 0.000 claims abstract description 10
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
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- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
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- 238000001746 injection moulding Methods 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
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- PGWMQVQLSMAHHO-UHFFFAOYSA-N sulfanylidenesilver Chemical class [Ag]=S PGWMQVQLSMAHHO-UHFFFAOYSA-N 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1433—Application-specific integrated circuit [ASIC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Die Erfindung betrifft einen Sensor (14) zum Erfassen eines von einer zu messenden physikalischen Größe (16) abhängigen physikalischen Geberfeldes (32, 38), umfassend: – einen Leadframe (48) mit einer Bestückinsel (58), einer Schnittstelle (54) und wenigstens einer von der Schnittstelle (54) zur Bestückinsel (58) führenden Leiterbahn (62), – eine auf der Bestückinsel (58) des Leadframes (48) getragene Sensorschaltung (46) zum Erfassen des Geberfeldes (32, 38) und zum Ausgeben eines vom Geberfeld (32, 38) abhängigen Sensorsignals (26, 28) über die Schnittstelle (54), und – einen Bonddraht (50) zum Kontaktieren der Sensorschaltung (46) mit der Leiterbahn (62) des Leadframes (48), – eine elektrisch an die Leiterbahn (62) des Leadframes (48) angebundene Kontaktierschicht (56) zum elektrischen Anbinden des Bonddrahtes (50) an den Leadframe (48), und – eine auf der Leiterbahn (62) des Leadframes (48) getragene Zwischenschicht (64), auf der von der Leiterbahn (62) des Leadframes (48) gesehen die Kontaktierschicht (56) getragen ist, wobei die Zwischenschicht (64) eine Elektronegativität aufweist, die größer ist, als eine Elektronegativität der Kontaktierschicht (56) und des Leadframes (48).The invention relates to a sensor (14) for detecting a physical encoder field (32, 38) dependent on a physical variable (16) to be measured, comprising: - a leadframe (48) with a placement island (58), an interface (54) and at least one of the interface (54) to the Bestückinsel (58) leading conductor track (62), - on the Bestückinsel (58) of the lead frame (48) carried sensor circuit (46) for detecting the encoder field (32, 38) and for outputting a from the encoder field (32, 38) dependent sensor signal (26, 28) via the interface (54), and - a bonding wire (50) for contacting the sensor circuit (46) with the conductor track (62) of the leadframe (48), - an electrical contacting layer (56) connected to the conductor track (62) of the leadframe (48) for electrically connecting the bonding wire (50) to the leadframe (48), and - an intermediate layer (64) carried on the conductor track (62) of the leadframe (48) , on which of the conductor track (62) of the leadf 48), wherein the intermediate layer (64) has an electronegativity which is greater than an electronegativity of the contacting layer (56) and of the leadframe (48).
Description
Die Erfindung betrifft einen Sensor zum Erfassen eines von einer zu messenden physikalischen Größe abhängigen physikalischen Geberfeldes.The invention relates to a sensor for detecting a dependent of a physical quantity to be measured physical encoder field.
Aus der
Es ist Aufgabe der Erfindung, derartige Sensoren zu verbessern.It is an object of the invention to improve such sensors.
Die Aufgabe wird durch die Merkmale der unabhängigen Ansprüche gelöst. Bevorzugte Weiterbildungen sind Gegenstand der abhängigen Ansprüche.The object is solved by the features of the independent claims. Preferred developments are the subject of the dependent claims.
Gemäß einem Aspekt der Erfindung umfasst ein Sensor zum Erfassen eines von einer zu messenden physikalischen Größe abhängigen physikalischen Geberfeldes einen Leadframe mit einer Bestückinsel, einer Schnittstelle und wenigstens einer von der Schnittstelle zur Bestückinsel führenden Leiterbahn, eine auf der Bestückinsel des Leadframes getragene Sensorschaltung zum Erfassen des Geberfeldes und zum Ausgeben eines vom Geberfeld abhängigen Sensorsignals über die Schnittstelle, und einen Bonddraht zum Kontaktieren der Sensorschaltung mit der Leiterbahn des Leadframes, eine elektrisch an die Leiterbahn des Leadframes angebundene Kontaktierschicht zum elektrischen Anbinden des Bonddrahtes an den Leadframe und eine auf der Leiterbahn des Leadframes getragene Zwischenschicht, auf der von der Leiterbahn des Leadframes gesehen die Kontaktierschicht getragen ist, wobei die Zwischenschicht eine Elektronegativität aufweist, die größer ist, als eine Elektronegativität der Kontaktierschicht und des Leadframes.According to one aspect of the invention, a sensor for detecting a physical encoder field dependent on a physical variable to be measured comprises a leadframe with a placement island, an interface and at least one conductor track leading from the interface to the placement island, a sensor circuit carried on the placement island of the leadframe for detecting the Encoder field and for outputting a sensor field dependent on the sensor signal via the interface, and a bonding wire for contacting the sensor circuit with the conductor track of the leadframe, an electrically connected to the conductor track of the leadframe contacting layer for electrically connecting the bonding wire to the leadframe and one on the conductor track of the leadframe supported intermediate layer, on the seen from the conductor track of the lead frame, the contacting layer is supported, wherein the intermediate layer has an electronegativity, which is greater than an electronegativity of Kontaktierschi and the leadframe.
Dem angegebenen Sensor liegt die Überlegung zugrunde, dass die Kontaktierschicht beim elektrischen Anschließen der Sensorschaltung an die Leiterbahn des Leadframes über einen Bonddraht als Verbindungselement notwendig ist, eine ausreichend hohe mechanische Festigkeit des Bonddrahtes auf dem Leadframe sicherzustellen, damit dieser sich im Nachhinein nicht wieder vom Leadframe löst und die elektrische Verbindung zwischen Sensorschaltung und Leiterbahn unterbrochen wird.The specified sensor is based on the consideration that the contacting layer is necessary when electrically connecting the sensor circuit to the conductor track of the leadframe via a bonding wire as a connecting element to ensure a sufficiently high mechanical strength of the bonding wire on the leadframe, so that it does not come back from the leadframe in hindsight solves and the electrical connection between the sensor circuit and conductor is interrupted.
Der Leadframe sollte dabei resistent gegen bestimmte zu erwartende Umweltbelastungen, wie kontaminierte Flüssigkeiten oder Gase ausgelegt sein. So könnte es in einem Fahrzeug beispielsweise notwendig sein, den Leadframe beständig gegenüber mit Schwefel kontaminierten Flüssigkeiten oder Gasen auszulegen. Dies hat jedoch den Nachteil, dass der Leadframe in seiner Elektronegativität nicht vollständig unabhängig gegenüber der Kontaktierschicht ausgebildet werden kann. Deshalb könnte die Kontaktierschicht bei in den Sensor eindringender mit Schwefel kontaminierter Feuchtigkeit durch Umwandlung in Sulfide oder anderer Schwefelverbindungen zerstört werden, was dann einen Ausfall des Sensors nach sich ziehen würde, weil der mechanische und folglich auch der elektrische Kontakt zwischen Bonddraht und Leiterbahn des Leadframes unterbricht.The leadframe should be resistant to certain expected environmental impacts such as contaminated liquids or gases. For example, in a vehicle, it may be necessary to have the leadframe resistant to sulfur contaminated liquids or gases. However, this has the disadvantage that the leadframe in its electronegativity can not be formed completely independently of the contacting layer. Therefore, if contact with sulfur-contaminated moisture penetrates into the sensor, the contacting layer could be destroyed by conversion to sulfides or other sulfur compounds, which would then result in failure of the sensor because the mechanical and thus electrical contact between the bonding wire and leadframe of the leadframe interrupts ,
Hier greift der angegebene Sensor mit der Überlegung an, die Kontaktierschicht über eine Opferanodenschicht in Form der Zwischenschicht vom Leadframe zu entkoppeln. Mit dieser Opferanodenschicht sind die chemischen Eigenschaften der Kontaktierschicht unabhängig vom Material des Leadframes. Die Opferanodenschicht weist in dem Verbund die größte Elektronegativität auf und wird somit von der eindringenden Feuchtigkeit als erstes angegriffen. Die Kontaktierschicht bleibt dann länger erhalten, wodurch die Lebensdauer des Sensors spürbar gesteigert werden kann.Here, the specified sensor attacks with the consideration of decoupling the contacting layer via a sacrificial anode layer in the form of the intermediate layer from the leadframe. With this sacrificial anode layer, the chemical properties of the contacting layer are independent of the material of the leadframe. The sacrificial anodic layer has the greatest electronegativity in the composite and is thus the first to be attacked by the penetrating moisture. The contacting layer then remains longer, whereby the life of the sensor can be noticeably increased.
Die Elektronegativität der Kontaktierschicht kann dann völlig frei gewählt werden, also auch kleiner als die Elektronegativität des Leadframes.The electronegativity of the contacting layer can then be chosen completely freely, ie also smaller than the electronegativity of the leadframe.
In einer besonderen Weiterbildung umfasst der angegebene Sensor eine wenigstens die Zwischenschicht und die Kontaktierschicht auf der Leiterbahn einhüllende Schmutzmasse. Diese Schutzmasse soll den Sensor vor Umwelteinflüssen, wie beispielsweise der oben genannten Feuchtigkeit schützen. Mechanische Überbeanspruchungen, die beispielweise durch Temperaturwechsel und/oder Zugbeanspruchungen auf die Leiterbahn des Leadframes bedingt sein können, können zu einem Aufbrechen der Verbindung zwischen Schutzmasse und Leadframe führen, so dass sich zwischen dem Leadframe und der Schutzmasse ein Spalt ausbildet, der das Kontaktierpin für die zuvor erwähnte Flüssigkeit nach außen hin exponiert. Die als Opferanode wirkende Zwischenschicht schützt dabei jedoch die Kontaktierschicht und stellt eine ausreichend lange Lebensdauer dieser sicher.In a particular embodiment, the specified sensor comprises a dirt mass enveloping at least the intermediate layer and the contacting layer on the conductor track. This protective compound is to protect the sensor from environmental influences, such as the above-mentioned moisture. Mechanical overloading, which may be caused by temperature changes and / or tensile stresses on the conductor track of the lead frame, for example, can lead to a break in the connection between the protective ground and leadframe, so that forms a gap between the leadframe and the protective ground, the Kontaktierpin for previously mentioned liquid exposed to the outside. The intermediate layer acting as a sacrificial anode, however, protects the contacting layer and ensures a sufficiently long service life thereof.
Die als Opferanode wirkende Zwischenschicht sollte dabei zumindest in dem Bereich eine möglichst große Oberfläche aufweisen werden, in dem die eindringende am Wahrscheinlichsten auftritt. Aus diesem Grund kragt die Zwischenschicht in einer besonderen Weiterbildung des angegebenen Sensors wenigstens teilweise vor die Kontaktierschicht, um diese möglichst große Oberfläche sicherzustellen.The intermediate layer acting as a sacrificial anode should at least in this area have as large a surface as possible, in which the penetrating most likely occurs. For this reason, in a particular development of the specified sensor, the intermediate layer at least partially protrudes in front of the contacting layer in order to ensure the largest possible surface area.
In einer bevorzugten Weiterbildung kann die Zwischenschicht in einer Schnittebene zwischen der Zwischenschicht und der Kontaktierschicht gesehen flächig alternativ oder zusätzlich wenigstens genauso groß ausgebildet sein, wie die Kontaktierschicht. Damit ist sichergestellt, dass zunächst auch tatsächlich die Zwischenschicht von der eindringenden Feuchtigkeit angegriffen, bevor die eindringende Feuchtigkeit die Kontaktierschicht angreift. In a preferred development, the intermediate layer seen in a sectional plane between the intermediate layer and the contacting layer may alternatively or additionally be formed at least as large as the contacting layer. This ensures that initially the intermediate layer is actually attacked by the penetrating moisture before the penetrating moisture attacks the contacting layer.
In einer besonders bevorzugten Weiterbildung sollte die Zwischenschicht in einer Schnittebene zwischen der Zwischenschicht und der Kontaktierschicht gesehen aber flächig größer ausgebildet sein, als die Kontaktierschicht, weil eine entsprechend große Opferschichtfläche eine erhöhte Reaktionsfläche und damit einen verbesserten Schutz der Kontaktierschicht bietet.In a particularly preferred development, the intermediate layer should be seen in a sectional plane between the intermediate layer and the Kontaktierschicht but formed larger surface than the Kontaktierschicht, because a correspondingly large sacrificial layer surface provides an increased reaction surface and thus improved protection of Kontaktierschicht.
In einer anderen Weiterbildung des angegebenen Sensors ist die Zwischenschicht normal zu einer Schnittebene zwischen der Zwischenschicht und der Kontaktierschicht gesehen dünner ausgebildet, als die Kontaktierschicht, wodurch der angegebene Sensor sehr bauraumsparend ausgeführt wird.In another embodiment of the specified sensor, the intermediate layer is formed thinner seen normal to a sectional plane between the intermediate layer and the Kontaktierschicht, as the Kontaktierschicht, whereby the specified sensor is designed to save space.
Als Material kann für Kontaktierschicht Silber, für den Leadframe eine Kupferlegierung oder eine Eisen-Nickel-Legierung und für die Zwischenschicht Kupfer gewählt werden.The material used may be silver for the contact layer, a copper alloy or an iron-nickel alloy for the leadframe, and copper for the intermediate layer.
Der angegebene Sensor kann ein Airbag-Beschleunigungssensor, ein Raddrehzahlsensor oder ein Inertialsensor für ein Fahrzeug sein.The indicated sensor may be an airbag acceleration sensor, a wheel speed sensor or an inertial sensor for a vehicle.
Gemäß einem weiteren Aspekt der Erfindung umfasst ein Fahrzeug einen angegebenen Sensor.In accordance with another aspect of the invention, a vehicle includes a specified sensor.
Die oben beschriebenen Eigenschaften, Merkmale und Vorteile dieser Erfindung sowie die Art und Weise, wie diese erreicht werden, werden klarer und deutlicher verständlich im Zusammenhang mit der folgenden Beschreibung der Ausführungsbeispiele, die im Zusammenhang mit den Zeichnungen näher erläutert werden, wobei:The above-described characteristics, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following description of the embodiments, which will be described in connection with the drawings, wherein:
In den Figuren werden gleiche technische Elemente mit gleichen Bezugszeichen versehen und nur einmal beschrieben.In the figures, the same technical elements are provided with the same reference numerals and described only once.
Es wird auf
Das Fahrzeug
Dabei kann es in einer dem Fachmann bekannten Weise passieren, dass das die Räder
In der vorliegenden Ausführung weist das Fahrzeug
Basierend auf den erfassten Drehzahlen
Der Regler
Um die nachstehenden Erklärungen zu vereinfachen soll in nicht einschränkender davon ausgegangen werden, dass der Inertialsensor
Zwar wird die Erfindung anhand des Inertialsensors
Nachstehend wird das ein mögliches Prinzip für den Inertialsensors
Zur Erfassung der Querbeschleunigung
Zur Erfassung der Gierrate
In der Signalaufbereitungsschaltung
Im Rahmen der vorliegenden Ausführung bilden die beiden Messaufnehmer
Die Sensorschaltung
Schließlich ragen vom Inertialsensor
Es wird auf
Im Rahmen der vorliegenden Ausführungen ist die gesamte Sensorschaltung
Die Kontaktierung der Sensorschaltung
Die Sensorschaltung
Um den Leadframe
Derartigen Legierungen gegenüber weist das Silber der Kontaktierschicht
Um dies zu vermeiden wird im Rahmen der vorliegenden Ausführung vorgeschlagen, zwischen die Silber-Kontaktierschicht
Wie in
Andererseits kann jedoch eine Schichtdicke
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- WO 2010/037810 A1 [0002] WO 2010/037810 A1 [0002]
- DE 102011080789 A1 [0025] DE 102011080789 A1 [0025]
- DE 102010002796 A1 [0035] DE 102010002796 A1 [0035]
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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DE102014213218.5A DE102014213218A1 (en) | 2014-07-08 | 2014-07-08 | Sensor with sacrificial anode |
KR1020177001221A KR101930649B1 (en) | 2014-07-08 | 2015-06-25 | Sensor comprising a sacrificial anode |
CN201590000777.6U CN206758422U (en) | 2014-07-08 | 2015-06-25 | Sensor with sacrificial anode |
PCT/EP2015/064415 WO2016005201A1 (en) | 2014-07-08 | 2015-06-25 | Sensor comprising a sacrificial anode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE102014213218.5A DE102014213218A1 (en) | 2014-07-08 | 2014-07-08 | Sensor with sacrificial anode |
Publications (1)
Publication Number | Publication Date |
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DE102014213218A1 true DE102014213218A1 (en) | 2016-02-18 |
Family
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DE102014213218.5A Pending DE102014213218A1 (en) | 2014-07-08 | 2014-07-08 | Sensor with sacrificial anode |
Country Status (4)
Country | Link |
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KR (1) | KR101930649B1 (en) |
CN (1) | CN206758422U (en) |
DE (1) | DE102014213218A1 (en) |
WO (1) | WO2016005201A1 (en) |
Cited By (1)
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US11410942B2 (en) | 2019-07-24 | 2022-08-09 | Infineon Technologies Ag | Package with selective corrosion protection of electric connection structure |
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CN106290985B (en) * | 2016-07-26 | 2019-04-12 | 广东合微集成电路技术有限公司 | A kind of condenser type compound sensor and its manufacturing method |
FR3105399B1 (en) * | 2019-12-18 | 2022-02-04 | Beyond Your Motion | ELECTRONIC DEVICE COMPRISING AN INERTIAL UNIT |
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Also Published As
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CN206758422U (en) | 2017-12-15 |
KR101930649B1 (en) | 2018-12-18 |
KR20170018940A (en) | 2017-02-20 |
WO2016005201A1 (en) | 2016-01-14 |
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