DE102013106944A1 - An optoelectronic component device, method for producing an optoelectronic component device and method for operating an optoelectronic component device - Google Patents

Abstract

In various embodiments, an optoelectronic component device is provided, the optoelectronic component device comprising: a radiation source (130) having a first optically active region and a second optically active region, wherein the first optically active region is adapted to emit a first electromagnetic radiation (500) and the second optically active region is configured to emit a second electromagnetic radiation (510); and a first electro-optical component (110) and at least one second electro-optical component (120); wherein the first electro-optical component (110) and the at least one second electro-optical component (120) are arranged in the beam path of the radiation source (130) in such a way that the first electromagnetic radiation (500) is changed in a different way than the second electromagnetic radiation ( 510) so that the first electromagnetic radiation (500) differs in at least one property from the second electromagnetic radiation (510).

Description

In various embodiments, an optoelectronic component device, a method for producing an optoelectronic component device, and a method for operating an optoelectronic component device are provided.

A conventional organic optoelectronic device ( 8th ), such as an organic light emitting diode (OLED), may include an anode and a cathode having an organic functional layer system therebetween. The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures each of two or more charge generating layers (CGL) Charge pair generation, and one or more electron block, also referred to as hole transport layer (HTL), and one or more Lochblockadeschichten, also referred to as electron transport layer (s) (ETL) to the To direct current flow.

Organic-based optoelectronic components, for example organic light-emitting diodes, are finding increasing widespread use in general lighting, for example as large-area illuminated surfaces (area light source). OLED area light sources have hitherto been either transparent, semitransparent, diffuse or specular. Colloquially, an OLED is described as transparent or not transparent. As far as is known, the appearance of an OLED can not yet be changed in the switched-on state and in the switched-off state.

Also known are electrically switchable mirror layers: DE10031294A1 . DE102007022090A1 ; and electrically switchable diaphragms / filters: J. Jacobsen et al., IBM System Journal 36 (1997) 457-463 ; B. Comiskey et al. Nature 394 (1998) 253-255 ; WO199803896A1 ; WO199841899A1 ; WO2010064165A1 ; WO2009053890A2 and EP1601030A2 ,

In various embodiments, an optoelectronic component device, a method for producing an optoelectronic component device, and a method for operating an optoelectronic component device are provided, with which it is possible to increase the appearance and the beam direction of OLED area light sources in the switched-off state and / or in the switched-on state change.

In various embodiments, an optoelectronic component device is provided, the optoelectronic component device comprising: a radiation source having a first optically active region and a second optically active region, wherein the first optically active region is adapted to emit a first electromagnetic radiation and the second optically active region is arranged to emit a second electromagnetic radiation; and a first electro-optical component and at least one second electro-optical component; wherein the first electro-optical component and the at least one second electro-optical component are arranged in the beam path of the radiation source to each other such that the first electromagnetic radiation is changed in a different manner than the second electromagnetic radiation, so that the first electromagnetic radiation in at least one property of the second electromagnetic radiation is different.

In various embodiments, the radiation source can be designed as a light-emitting component, for example a light-emitting diode, an organic light-emitting diode, an (organic) light emitting side into an optical waveguide light, also referred to as side-coupled LED or side-coupled OLED, a fluorescent tube, an incandescent lamp or a compact fluorescent lamp ,

In various embodiments, the optoelectronic component device can be designed as a mechanically flexible component, for example as a bendable OLED.

In one embodiment, the radiation source can be set up as a surface light source, wherein the surface normal of the first optically active region has a different orientation than the surface normal of the second optically active region.

As an orientation of a surface normal, for example, the normal vector of the surface can be understood. A different orientation can already be given if the normal vectors of a first surface and a second surface have different signs.

In one embodiment, the first optically active region may be formed parallel to the second optically active region, for example approximately plane-parallel. However, the first optically active region may be the second optically active region even in a form opposite to be plane-parallel, for example, tapered or diverging.

In one embodiment, the surface light source can be configured as an organic light-emitting diode.

In one embodiment, the organic light-emitting diode may be transparent or translucent.

In one embodiment, the first electro-optical component can be formed in the beam path of the first optically active region.

In one embodiment, the second electro-optical component may be formed in the beam path of the first optically active region and / or the second optically active region.

In one embodiment, the second electro-optical component may be formed between the first electro-optical component and the first optically active region.

In one embodiment, the first electro-optical component and / or the second electro-optical component can / can be formed on the first optically active region and / or the second optically active region.

In one embodiment, the first electro-optical component and / or the second electro-optical component can be integrated in the radiation source, for example monolithically, for example as a structure in the layer cross-section of the radiation source.

In one configuration, the first electro-optical component and the second electro-optical component may be designed such that the first electro-optical component has at least one first electrically adjustable optical property and the at least one second electro-optical component has at least one second electrically adjustable optical property.

In one embodiment, the first electro-optical component and the second electro-optical component may have at least one of the following electro-optical components or be configured as such: a mirror with electrically tunable reflectivity; a filter with electrically tunable absorption; and / or a diaphragm with electrically tunable transmission.

In one embodiment, the first electro-optical component and the second electro-optical component may have the same electro-optical component.

In one embodiment, the first electro-optical component and the second electro-optical component may have a different electro-optical component.

In one embodiment of the optoelectronic component device, the optoelectronic component device may further comprise a control device, wherein the first electro-optical component, the second electro-optical component and / or the radiation source are electrically connected to the control device / is.

In one embodiment, the control device may be designed such that the optoelectronic properties, for example optical properties, of the first electro-optical component, of the at least one second electro-optical component and of the radiation source are changed independently of one another. Optical properties can be, for example, the transmission, absorption and / or reflection of electromagnetic radiation as a function of a wavelength or a wavelength range. Another optical property can be, for example, the intensity distribution in a wavelength spectrum of an emitted or absorbed electromagnetic radiation.

In an embodiment, the control device may comprise a pulse modulator which is set up to drive the first electro-optical component, the at least one second electro-optical component and / or the radiation source.

In one embodiment, the pulse modulator may be configured as a pulse amplitude modulator, a pulse frequency modulator and / or a pulse width modulator.

In one embodiment, the optoelectronic component can be designed such that the first electromagnetic radiation and the second electromagnetic radiation are approximately equal in at least one of the following properties: color tone; Saturation; or brightness.

In one embodiment, the radiation source may be configured such that the first electromagnetic radiation and the second electromagnetic radiation are different in at least one of the following properties: hue; Saturation; or brightness.

In one embodiment, the first electro-optical component and the at least a second electro-optical device may be arranged such that the first optically active region and the second optically active region differ in at least one of the following properties: reflectivity; Absorption; or transmissivity.

In one embodiment, the radiation source can be configured such that the first electromagnetic radiation has approximately the same color location as the second electromagnetic radiation.

In one embodiment, the first electro-optical component and the at least one second electro-optical component can be structured, for example flat, for example for information reproduction, for example in the form of a pictogram, an ideogram and / or a lettering.

In one refinement, the optoelectronic component device can be designed as a mirror emitting light on one side or a window emitting light on one side.

In various embodiments, there is provided a method of fabricating an optoelectronic component device, the method comprising: forming a radiation source having a first optically active region and a second optically active region, wherein the first optically active region is configured to emit a first electromagnetic radiation; second optically active region is arranged to emit a second electromagnetic radiation; and forming a first electro-optical component and forming at least one second electro-optical component; wherein the first electro-optical component and the at least one second electro-optical component are formed in the beam path of the radiation source to each other such that the first electromagnetic radiation is changed in a different manner than the second electromagnetic radiation, so that the first electromagnetic radiation in at least one property of the second electromagnetic radiation is different.

In one embodiment of the method, the radiation source can be formed as a surface light source, wherein the surface normal of the first optically active region can have a different orientation than the surface normal of the second optically active region.

In one embodiment of the method, the first optically active region can be formed parallel to the second optically active region, for example approximately plane-parallel.

In one embodiment of the method, the surface light source can be formed as an organic light-emitting diode.

In one embodiment of the method, the organic light-emitting diode can be made transparent or translucent.

In one embodiment of the method, the first electro-optical component can be formed in the beam path of the first optically active region.

In one embodiment of the method, the second electro-optical component can be formed in the beam path of the first optically active region and / or of the second optically active region.

In one configuration of the method, the second electro-optical component can be formed between the first electro-optical component and the first optically active region.

In one embodiment of the method, the first electro-optical component and / or the second electro-optical component can / can be formed on the first optically active region and / or the second optically active region.

In one embodiment of the method, the first electro-optical component and / or the second electro-optical component can / can be integrated in the radiation source, for example monolithically.

In one embodiment of the method, the first electro-optical component and the at least one second electro-optical component can be formed such that the first electro-optical component has at least one first electrically adjustable optical property and the at least one second electro-optical component has at least one second electrically adjustable optical property. An electrically adjustable optical property can relate, for example, to absorption, reflectivity, transmission and / or color appearance.

In one embodiment of the method, the first electro-optical component and the second electro-optical component can have at least one of the following electro-optical components or be formed as such: a mirror with electrically tunable reflectivity; a filter with electrically tunable absorption; and / or a diaphragm with electrically tunable transmission.

By means of an electrically switchable diaphragm, the beam propagation of a beam path of electromagnetic radiation can be restricted or interrupted, for example for information reproduction. The reproduced information can be formed on the screen, for example as a pictogram, an ideogram and / or a logo, which is represented for example by means of colored particles. In addition or instead, the information can be displayed by means of the restricted or interrupted beam path.

However, an electrically switchable diaphragm can also have, for example, a phosphor, wherein the phosphor can be introduced by means of electrical switching into the beam path or can be removed therefrom. The phosphor can be configured to wavelength conversion and the color appearance, d. H. change the wavelength spectrum, transmitted or reflected electromagnetic radiation.

By means of an electrically switchable filter, for example, a wavelength range and / or a polarization can be removed from the spectrum of electromagnetic radiation provided. As a result, for example, the color appearance can be changed.

By means of the change in the color appearance, for example by means of wavelength conversion or filtering of the electromagnetic radiation, information can be displayed or a different physiological mood can be conveyed.

In one configuration of the method, the first electro-optical component and the second electro-optical component can be formed as identical electro-optical components.

In one embodiment of the method, the first electro-optical component and the second electro-optical component can be formed as a different electro-optical component.

In one embodiment of the method, the method may further comprise forming a control device, wherein the first electro-optical component, the second electro-optical component and / or the radiation source are electrically connected to the control device.

In one embodiment of the method, the control device can be designed such that the optoelectronic properties of the first electro-optical component, the at least one second electro-optical component and the radiation source are changed independently of one another.

In one embodiment of the method, the control device may be formed having a pulse modulator which is designed to drive the first electro-optical component, the at least one second electro-optical component and the optoelectronic component.

In one embodiment of the method, the pulse modulator can be designed as a pulse amplitude modulator, a pulse frequency modulator and / or a pulse width modulator.

In one embodiment of the method, the optoelectronic component can be formed such that the first electromagnetic radiation and the second electromagnetic radiation are approximately equal in at least one of the following properties: color tone; Saturation; or brightness.

In one embodiment of the method, the optoelectronic component can be formed such that the first electromagnetic radiation and the second electromagnetic radiation are different in at least one of the following properties: color tone; Saturation; or brightness.

In one embodiment of the method, the first electro-optical component and the at least one second electro-optical component can be arranged such that the first optically active region and the second optically active region differ in at least one of the following properties: reflectivity; Absorption; or transmissivity.

In one embodiment of the method, the optoelectronic component can be formed such that the first electromagnetic radiation has approximately the same color locus as the second electromagnetic radiation.

In one embodiment of the method, the first electro-optical component and the at least one second electro-optical component can be structured, for example for reproducing information, for example in the form of a pictogram, an ideogram and / or lettering.

In one embodiment of the method, the optoelectronic component device can be formed as a mirror emitting light on one side or a window emitting light on one side.

In various embodiments, a method for operating a optoelectronic component device, the method comprising: driving an optoelectronic component device according to one of the embodiments described above; wherein the first electro-optical component and the at least one second electro-optical component are differently driven, that the first electromagnetic radiation is changed in a different way than the second electromagnetic radiation, so that the first electromagnetic radiation differ in at least one property from the second electromagnetic radiation.

In one embodiment of the method, the first electro-optical component can be controlled such that the first optically active region at least partially emits a first electromagnetic radiation.

In one embodiment of the method, the first electro-optical component can be controlled such that the first optically active region is at least partially reflective, for example with respect to electromagnetic radiation incident on the first optically active region.

In one embodiment of the method, the first electro-optical component can be controlled in such a way that the first optically active region is at least partially absorbent, for example with respect to electromagnetic radiation incident on the first optically active region.

In one embodiment of the method, the first electro-optical component can be controlled in such a way that the first optically active region is at least partially optically inactive, for example in which a diaphragm is formed before the first optically active region.

In one embodiment of the method, the second electro-optical component can be controlled such that the second optically active region at least partially emits a second electromagnetic radiation.

In one embodiment of the method, the second electro-optical component can be controlled such that the second optically active region is at least partially reflective, for example with respect to electromagnetic radiation incident on the second optically active region.

In one embodiment of the method, the second electro-optical component can be controlled in such a way that the second optically active region is at least partially absorbent, for example with regard to electromagnetic radiation incident on the second optically active region.

In one embodiment of the method, the second electro-optical component can be controlled in such a way that the second optically active region is at least partially optically inactive, for example by forming a diaphragm in front of the second optically active region.

In one embodiment of the method, the driving of the radiation source can be coupled to the driving of the first electro-optical component and / or of the second electro-optical component.

In one embodiment of the method, the first electro-optical component and the radiation source can be controlled such that the first optically active region is at least partially transparent or translucent.

In one embodiment of the method, the second electro-optical component and the radiation source can be controlled such that the second optically active region is at least partially transparent or translucent.

In one embodiment of the method, the first electro-optical component, the second electro-optical component and the radiation source can be controlled such that the first electro-optical component is at least partially reflective and the second electro-optical component and the second optically active region is at least partially transmissive or translucent.

In one embodiment of the method, the first electro-optical component and the second electro-optical component can be controlled such that the first optically active region at least partially emits a first electromagnetic radiation and the second electro-optical component and the second optically active region is at least partially transmissive or translucent.

In one configuration of the method, the control signal of the optoelectronic component can be set up as an input signal for the control of the first electro-optical component and / or of the at least one second electro-optical component.

In one embodiment of the method, the optoelectronic component device can be operated as a one-sided light-emitting mirror or one-sided light-emitting window.

In an embodiment of the method, the pulse modulator may include or be configured as a phase dimmer, wherein a phase dimmer may be used to phase-dimming a supplied voltage or one of the provided voltages Electricity is set up. The phase dimmer may be configured to phase angle control or phase angle control the electrical potential across the dielectric layer.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1a FIG. 3 d shows schematic cross-sectional views of an optoelectronic component device according to various exemplary embodiments; FIG.

2 a schematic cross-sectional view of an optoelectronic component device according to various embodiments;

3 schematic representations of a method for operating an optoelectronic component device according to various embodiments;

4a , b are schematic representations of a method for operating an optoelectronic component device according to various embodiments;

5a -D schematic representations of a method for operating an optoelectronic component device according to various embodiments;

6a C are schematic representations of a method for operating an optoelectronic component device according to various embodiments; and

7 a diagram of a method for operating an optoelectronic component device according to various embodiments; and

8th a conventional optoelectronic device.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

A radiation source may be a device emitting electromagnetic radiation.

As electromagnetic radiation X-ray, UV radiation, light, microwaves and electromagnetic radiation of higher wavelength is to be understood.

In various embodiments, a radiation source may be, for example, a semiconductor device emitting electromagnetic radiation and / or a diode emitting electromagnetic radiation, a diode emitting organic electromagnetic radiation, a transistor emitting electromagnetic radiation or a transistor emitting organic electromagnetic radiation. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor. The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components may be provided, for example housed in a common housing.

A radiation source, which is embodied as an optoelectronic component, can in various configurations, as an organic light emitting diode (OLED), an organic photovoltaic system, for example a organic solar cell, an organic sensor, an organic field effect transistor (OFET) and / or organic electronics may be formed. The organic field effect transistor may be an all-OFET in which all layers are organic. An organic, electronic component may have an organic functional layer system, which is synonymously also referred to as an organic functional layer structure. The organic functional layer structure may include or be formed from an organic substance or mixture of organic substances, for example, configured to provide electromagnetic radiation from a supplied electrical current or to provide an electrical current from a provided electromagnetic radiation.

In the context of this description, an optically active region of an optoelectronic component can be understood as the region of an optoelectronic component which can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region. An optoelectronic component can have, for example, two or more optically active regions, wherein the optically active regions can be, for example, optically active sides of a planar optoelectronic component, for example two opposing optically active surfaces. However, an optoelectronic component with two or more optically active regions can also be designed as a so-called stacked organic light-emitting diode with two or more OLED units stacked one above the other. In the case of a canted organic light-emitting diode, for example, a first OLED unit may be formed as a first optically active region and a second OLED unit as a second optically active region.

An optoelectronic component which has two planar, optically active sides can, for example, be transparent, for example as a transparent organic light-emitting diode.

However, the optically active region can also have a planar, optically active side and a flat, optically inactive side, for example an organic light-emitting diode which is set up as a top emitter or bottom emitter.

In various embodiments, the optoelectronic component device can be controlled by means of the phase angle, for example, be dimmed, for example by means of a phase angle control and / or a phase section control. The phase angle Phi can be understood to mean the angular interval in one half cycle of the input voltage of the radiation source and / or electro-optical components, while no voltage is applied to the connected components by means of the dimmer. For example, the phase angle may have an amount in a range of about 0 ° to about 180 °. A phase angle of about 0 ° can be understood to be undimmed. A phase angle of about 180 ° can be understood as being maximally dimmed. Maximum dimming may be understood as being similar to an open switch electrically connected in series with the group of dimmed components.

The term "translucent" or "translucent layer" may in various embodiments be understood to mean that a layer is transparent to light, for example for the light generated by the light-emitting component, for example one or more wavelength ranges, for example for light in a wavelength range of visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). By way of example, the term "translucent layer" in various exemplary embodiments is to be understood as meaning that substantially all of the amount of light coupled into a structure (for example a layer) is coupled out of the structure (for example layer), whereby part of the light can be scattered in this case ,

The term "transparent" or "transparent layer" can be understood in various embodiments that a layer is transparent to light (for example, at least in a subregion of the wavelength range of 380 nm to 780 nm), wherein in a structure (for example, a layer) coupled-in light is also coupled out without any scattering or light conversion from the structure (for example, layer).

1a Figure-d show schematic cross-sectional views of an optoelectronic component device according to various embodiments.

Shown is a schematic cross-sectional view of an embodiment of an optoelectronic component device 100 with a first electro-optical component 110 , a second electro-optical device 120 and an optoelectronic device 130 ,

The illustrated embodiment of the optoelectronic component 130 has a first electrode 104 on or over a carrier 102 on. On or above the first electrode 104 is an organic functional layered structure 106 educated. Over or on the organic functional layer structure 106 is a second electrode 108 educated. The second electrode 108 is by means of an electrical insulation 112 from the first electrode 104 electrically isolated. On or above the second electrode 108 is a barrier thin film 118 arranged such that the second electrode 108 , the electrical insulations 112 and the organic functional layer structure 106 from the barrier thin film 118 are surrounded, that is in connection with barrier thin film 118 with the carrier 102 are included. The barrier thin film 118 can hermetically seal the enclosed layers with respect to harmful environmental influences. On or above the barrier thin film 118 is an adhesive layer 122 arranged such that the adhesive layer 122 the barrier thin film 118 flat and hermetically sealed against harmful environmental influences. On or above the adhesive layer 122 is a cover 124 arranged. The cover 124 is for example on the barrier thin film 118 with an adhesive 122 glued, for example laminated. The structures mentioned are described in more detail below.

The optoelectronic component 130 in the form of a light-emitting component, for example in the form of an organic light-emitting diode 130 , can be a carrier 102 exhibit. The carrier 102 For example, it can serve as a support element for electronic elements or layers, for example light-emitting elements. For example, the carrier 102 Glass, quartz, and / or have a semiconductor material or be formed therefrom. Furthermore, the carrier may comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The carrier 102 may comprise one or more of the above materials. The carrier 102 can be translucent or even transparent.

The carrier 102 may comprise or be formed from a metal, for example, copper, silver, gold, platinum, iron, aluminum, chromium, molybdenum, for example, a metal compound, such as steel.

A carrier 102 Having a metal or a metal compound may also be formed as a metal foil or a metal-coated foil.

The carrier 102 can be translucent or even transparent. With a carrier 102 comprising a metal, the metal may be formed, for example, as a thin layer of transparent or translucent layer, and / or the metal may be part of a mirror structure.

The carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed. A carrier 102 For example, the mechanical rigid portion and a mechanically flexible portion may be structured, for example, by making the rigid portion and the flexible portion have different thicknesses.

A mechanically flexible carrier 102 or the mechanically flexible region may, for example, be formed as a foil, for example a plastic foil, metal foil or a thin glass.

In one embodiment, the carrier may 102 as a waveguide for electromagnetic radiation of the optoelectronic component 130 be formed, for example, be transparent or translucent with respect to the provided electromagnetic radiation of the optoelectronic component 130 ,

On or above the vehicle 102 In various embodiments, a barrier layer may optionally be arranged (not shown), for example on the side of the organic functional layer structure 106 and / or on the side, the organic functional layer structure 106 turned away.

On or above the vehicle 102 In various embodiments, a barrier layer can optionally be arranged (not shown).

The barrier layer may comprise or be formed from one or more of the following materials: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), Nylon 66, as well as mixtures and alloys thereof.

In various embodiments, the barrier layer may be formed by atomic layer deposition (ALD), molecular layer deposition (MLD), and / or chemical vapor deposition (CVD), for example, a plasma enhanced chemical vapor deposition ("plasma enhanced") process vapor deposition - PE-CVD) are formed.

In various embodiments, the barrier layer may have two or more identical and / or different layers or layers, for example next to one another and / or one above the other, for example as a barrier layer structure or a barrier stack, for example. Further, in various embodiments, the barrier layer may have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm ,

In various embodiments, a cover (not shown) may be provided on or above the barrier layer and / or the barrier layer may be formed as a cover, for example as a cavity glass encapsulation.

In various embodiments, the barrier layer may be optional, for example by the carrier 102 already hermetically sealed.

On or above the barrier layer (or, if the barrier layer is absent, on or above the support 102 ) may be an electrically active region of the light-emitting device 130 be arranged. The electrically active region may be the region of the light emitting device 130 in which an electric current for operation of the optoelectronic component, for example of the light-emitting component 130 flows.

In various embodiments, the electrically active region may be a first electrode 104 , a second electrode 108 and an organic functional layer structure 106 exhibit.

In various embodiments, on or above the barrier layer (or, if the barrier layer is not present (shown), on or above the support 102 ) the first electrode 104 (For example in the form of a first electrode layer 110 ) be applied.

The first electrode 104 (hereinafter also referred to as lower electrode 104 can be formed of an electrically conductive material or be, such as a metal or a conductive transparent oxide (TCO) or a stack of layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first electrode 104 have a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials.

In various embodiments, the first electrode 104 are formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first electrode 104 provide one or more of the following materials, as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, such as Ag, Ag / Mg; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 104 having electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first electrode 104 and the carrier 102 be formed translucent or transparent. In the case that the first electrode 104 is formed of a metal, the first electrode 104 For example, have a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 18 nm 104 For example, have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm. In various embodiments, the first electrode 104 have a layer thickness in one Range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Furthermore, in the event that the first electrode 104 is formed of a conductive transparent oxide (TCO), the first electrode 104 For example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of about 100 nm to about 150 nm.

Furthermore, in the event that the first electrode 104 For example, from a network of metallic nanowires, such as Ag, which may be combined with conductive polymers, a network of carbon nanotubes that may be combined with conductive polymers, or formed by graphene layers and composites, the first electrode 104 For example, a layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm, for example, a layer thickness in a range of about 40 nm to about 250 nm.

The first electrode 104 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The first electrode 104 may comprise a first electrical connection to which a first electrical potential (provided by a power source (not shown), for example a current source or a voltage source) can be applied. Alternatively, the first electrical potential to the carrier 102 be created or his and then then indirectly the first electrode 104 be supplied or be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region of the light-emitting component 130 an organic functional layer system 106 , also referred to as an organic electroluminescent layer structure 106 , which are on or above the first electrode 104 is or is applied.

The organic electroluminescent layer structure 106 may have multiple organic functional layer structures. In various embodiments, the organic electroluminescent layer structure 106 also have more than two organic functional layer structures, for example 3, 4, 5, 6, 7, 8, 9, 10, or even more.

In various embodiments, the other organic functional layer structures (not shown) may be like one of the configurations of the first organic functional layer structures 106 be or be trained. Several organic functional layer structure may be the same or different, for example, have a same or different emitter material.

The organic functional layer structure 106 can be on or above the first electrode 104 be arranged. In the case of a plurality of organic functional layer structures, a second organic functional layer structure may be arranged over the first organic functional layer structure, wherein a charge generation pair (CGL) generation layer structure is arranged between the first organic functional layer structure and the second organic functional layer structure is.

In embodiments in which more than two organic functional layer structures are provided, a respective charge carrier pair generation layer structure may be provided between each two organic functional layer structures.

As will be explained in more detail below, an organic functional layer structure 106 each having one or more emitter layers, for example with fluorescent and / or phosphorescent emitters, and one or more hole-conducting layers (in 1 not shown) (also referred to as hole transport layer (s)).

In various embodiments, alternatively or additionally, one or more electron conduction layers (also referred to as electron transport layer (s)) may be provided.

Examples of emitter materials used in the light-emitting device 130 According to various embodiments, for the emitter layer (s) can be used include organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example Iridium complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb-bpy) ₃ · 2 (PF ₆ ) (tris [4,4'-di-) tert-butyl- (2,2 ') - bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4,4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9, 10-bis [N, N-di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymeric emitters , Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in one or more matrix material (s).

It should be noted that other suitable emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) of the light-emitting device 130 For example, may be selected so that the light-emitting device 100 White light emitted. The emitter layer (s) may comprise a plurality of emitter materials emitting different colors (for example blue and yellow or blue, green and red), alternatively the emitter layer (s) may also be composed of several sublayers, such as a blue fluorescent emitter layer or blue phosphorescent emitter layer, a green phosphorescent emitter layer and a red phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission produced by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, resulting in primary radiation (not yet white) by the combination of primary radiation and secondary radiation gives a white color impression.

The emitter materials of various organic functional layer structures can also be chosen such that the individual emitter materials emit light of different colors (for example blue, green or red or any other color combinations, for example any other complementary color combinations), but for example the total light, the is emitted from all organic functional layer structures and is emitted to the outside of the OLED, a light of predetermined color, such as white light, is.

An organic functional layer structure 106 may generally comprise one or more electroluminescent layers. The one or more electroluminescent layers may include organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules ("small molecules"), or a combination of these materials. For example, the organic electroluminescent layer structure 106 have one or more electroluminescent layers, which is or are designed as a hole transport layer, so that, for example, in the case of an OLED, an effective hole injection into an electroluminescent layer or an electroluminescent region is made possible. Alternatively, in various embodiments, the organic functional layer structure 106 have one or more functional layers that are or are designed as an electron transport layer, so that, for example, in an OLED, effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. As a material for the hole transport layer, for example, tertiary amines, carbazole derivatives, conductive polyaniline or Polethylendioxythiophen can be used. In various embodiments, the one or more electroluminescent layers may be embodied as an electroluminescent layer.

On or above the organic electroluminescent layer structure 106 or optionally on or over the one or more further organic functional layers, the second electrode 108 (For example in the form of a second electrode layer 108 ), as described above.

In various embodiments, the second electrode 108 according to one of the embodiments of the first electrode 104 be formed, wherein the first electrode 104 and the second electrode 108 may be configured the same or different in one embodiment. In various embodiments, metals are particularly suitable.

In various embodiments, the second electrode 108 (For example, in the case of a metallic second electrode 108 ), for example, a layer thickness have a layer thickness of less than or equal to approximately 1000 nm, for example a layer thickness of less than or equal to approximately 500 nm, for example a layer thickness of less than or equal to approximately 200 nm, for example a layer thickness of less than or equal to about 100 nm, for example a layer thickness of less than or equal to about 50 nm, for example a layer thickness of less than or equal to about 45 nm, for example a layer thickness of less than or equal to about 40 nm, for example a layer thickness of less than or equal to about 35 nm For example, a layer thickness of less than or equal to about 30 nm, for example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example For example, a layer thickness of less than or equal to about 10 nm.

The second electrode 108 may be formed in various embodiments of one or more of the materials and with the respective layer thickness or be, as above in connection with the first electrode 104 described.

In various embodiments, the first electrode 104 and the second electrode 108 both translucent or transparent. Thus, the in 1a illustrated light emitting device 130 as a top and bottom emitter (in other words as a transparent light-emitting component 130 ).

The second electrode 108 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The second electrode 108 may comprise a second electrical connection to which a second electrical potential (which is different from the first electrical potential) provided by the energy source, can be applied. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

A contact pad 114 . 116 may be electrically and / or physically connected to an electrode 104 . 108 , A contact pad 114 . 116 However, it can also be considered as an area of an electrode 104 . 108 or a connection layer.

The first electrode 104 can with a first electrical contact pad 116 be electrically connected, to which a first electrical potential can be applied - provided by a power source (not shown), for example, a power source or a voltage source. The first contact pad 116 can in the geometric edge region of the optically active region of the light emitting device 130 on or above the vehicle 102 be formed, for example, laterally adjacent to the first electrode 104 , Alternatively, the first electrical potential to the carrier 102 be created or be and then then indirectly to the first electrode 104 be created or be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

In various embodiments, the second electrode 108 with a second contact pad 114 be physically and electrically connected, to which the second electric potential can be applied - provided by a power source (not shown), for example, a power source or a voltage source. The second contact pad 114 can in the geometric edge region of the optically active region of the light emitting device 130 on or above the vehicle 102 be formed, for example, laterally adjacent to the first electrode 104 ,

The contact pads 114 . 116 are by means of electrical insulation 112 electrically from the oppositely poled electrodes 104 . 108 isolated. In other words: the electrical insulation 112 may be arranged such that a current flow between two electrically conductive regions, for example between the first electrode 104 and the second electrode 108 or, for example, between the first electrode 104 and the second contact pad 114 is prevented. The substance or the substance mixture of the electrical insulation can be, for example, a coating or a coating agent, for example a polymer and / or a lacquer. The lacquer may, for example, have a coating material which can be applied in liquid or in powder form, for example comprising or being formed from a polyimide. The electrical insulations 112 For example, they may be applied or formed lithographically or by means of a printing process, for example structured. The printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing (pad printing).

In one embodiment, electrical isolation 112 be optional, for example when forming the optoelectronic device 130 with a suitable mask process.

The contact pads 114 . 116 may as a substance or mixture of substances, a substance or a mixture of substances similar to the first electrode 104 and / or the second electrode 108 or formed therefrom, for example as a metal layer structure having at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr); or molybdenum Aluminum-molybdenum (Mo-Al-Mo), silver-magnesium (Ag-Mg), aluminum.

The contact pads 114 . 116 For example, they may include or may be formed such as a contact pad, a pin, a flexible printed circuit board, a clip, a clip, or other electrical connection means.

On or above the second electrode 108 and thus on or above the electrically active region can optionally also encapsulation, for example in the form of a barrier thin layer / thin-layer encapsulation 118 be formed or be.

Under a "barrier thin film" or a "barrier thin film" 118 In the context of this application, for example, a layer or a layer structure can be understood which is suitable for forming a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, the barrier thin film 118 designed so that they can not be penetrated by OLED-damaging substances such as water, oxygen or solvent or at most very small proportions, for example, less than 10 ^-6 g / m ² / d.

According to one embodiment, the barrier thin film 118 be formed as a single layer (in other words, as a single layer). According to an alternative embodiment, the barrier thin layer 118 have a plurality of sub-layers formed on each other. In other words, according to an embodiment, the barrier thin film 118 be formed as a layer stack (stack). The barrier thin film 118 or one or more sublayers of the barrier film 118 can be formed, for example, by means of a suitable deposition process, for. Example by means of a Atomschichtabscheideverfahrens (Atomic Layer Deposition (ALD)) according to an embodiment, for. Plasma Enhanced Atomic Layer Deposition (PEALD) or plasma-less atomic layer deposition (PLALD), or chemical vapor deposition (CVD) according to another embodiment, e.g. , A plasma enhanced chemical vapor deposition (PECVD) or plasma-less chemical vapor deposition (PLCVD) process, or alternatively by other suitable deposition techniques.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in the case of a barrier thin film 118 having multiple sublayers, all sublayers are formed by an atomic layer deposition process. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in the case of a barrier thin layer 118 comprising a plurality of sublayers, one or more sublayers of the barrier film 118 be deposited by a deposition method other than an atomic layer deposition method, for example, by a vapor deposition method.

The barrier thin film 118 According to one embodiment, it may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to an embodiment.

According to an embodiment, in which the barrier thin film 118 has multiple sub-layers, all sub-layers may have the same layer thickness. According to another embodiment, the individual partial layers of the barrier thin layer 118 have different layer thicknesses. In other words, at least one of the partial layers may have a different layer thickness than one or more other of the partial layers.

The barrier thin film 118 or the individual partial layers of the barrier thin film 118 may be formed according to an embodiment as a translucent or transparent layer. In other words, the barrier thin film 118 (or the individual sublayers of the barrier thin film 118 ) of a translucent or transparent material (or combination of materials that is translucent or transparent).

According to one embodiment, the barrier thin film 118 or (in the case of a layer stack with a plurality of partial layers) one or several of the partial layers of the barrier thin film 118 aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, SiC _x N _y , indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. In various embodiments, the barrier thin film 118 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 118 one or more high refractive index materials, in other words one or more high refractive index materials, for example having a refractive index of at least 2.

It should also be pointed out that in various embodiments also entirely on a barrier thin film 118 can be waived. In such an embodiment, the optoelectronic component device may for example have a further encapsulation structure, whereby a barrier thin film 118 can be optional, for example, a cover, for example, a Kavitätsglasverkapselung or metallic encapsulation.

In various embodiments, on or above the barrier film 118 an adhesive 122 and / or a protective varnish 122 be provided by means of which, for example, a cover 124 (For example, a glass cover 124 , a metal foil cover 124 , a sealed plastic film cover 124 ) on the barrier thin film 118 attached, for example, is glued. In various embodiments, the optically translucent layer of adhesive 122 and / or protective varnish 122 have a layer thickness of greater than 1 micron, for example, a layer thickness of several microns. In various embodiments, the adhesive may include or be a lamination adhesive.

In various embodiments, light-scattering particles which can lead to a further improvement in the color angle distortion and the coupling-out efficiency can also be embedded in the layer of the adhesive (also referred to as the adhesive layer). In various embodiments may be provided as light scattering particles, for example, dielectric scattering particles such as metal oxides such. For example, silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga ₂ O _x ) alumina, or titanium oxide. Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

In various embodiments, between the second electrode 108 and the layer of adhesive 122 and / or protective varnish 122 or an electrically insulating layer (not shown), for example SiN, for example with a layer thickness in a range from about 300 nm to about 1.5 μm, for example with a layer thickness in a range from about 500 nm to about 1 μm to protect electrically unstable materials, for example during a wet chemical process.

In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the cover 124 , Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3. For example, in one embodiment, an adhesive may be a high refractive index adhesive having, for example, high refractive non-diffusing particles and an average refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

It should also be noted that in various embodiments, it is entirely an adhesive 122 can be omitted, for example in embodiments in which the cover 124 For example, glass, for example, by plasma spraying on the barrier thin film 118 be applied.

On or above the electrically active region may optionally be arranged a getter layer (not shown) such that the getter layer hermetically seals the electrically active region with respect to harmful environmental influences, such as the diffusion rate of water and / or oxygen to the barrier thin film 118 and / or the electrically active area. The getter layer can be structured, for example in an optically inactive edge region of the optoelectronic component.

In various embodiments, the getter layer may be translucent, transparent or opaque and have a layer thickness of greater than about 1 micron, for example, a layer thickness of several microns. In various embodiments, the matrix of the getter layer may comprise a lamination adhesive.

Furthermore, in various exemplary embodiments, one or more antireflection layers (for example combined with the barrier thin film 118 ) in the light-emitting device 130 be provided.

In various embodiments, the cover may / may 124 and / or the adhesive 122 have a refractive index (for example at a wavelength of 633 nm) of 1.55.

In one embodiment, the cover 124 glass, for example by means of a frit bonding / glass soldering / seal glass bonding using a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 with the barrier thin film 108 be applied.

In various embodiments, an electro-optical device 110 . 120 be formed as a colored, matte, silver and / or diffuse electrically switchable structure.

In various embodiments, an electro-optical device 110 . 120 be arranged as an electrically switchable mirror with tunable reflectivity. In various embodiments, the tuning of the reflectivity electrochromic-electric, gasochromic or thermochromic can be done.

An electrically switchable mirror layer with tunable reflectivity can be designed as described, for example, in US Pat DE10031294A1 ; DE102007022090A1 ,

An electrically switchable aperture with tunable transmission or an electrically switchable filter with tunable absorption can be designed as described, for example, in: J. Jacobsen et al., IBM System Journal 36 (1997) 457-463 ; B. Comiskey et al. Nature 394 (1998) 253-255 ; WO199803896A1 ; WO199841899A1 ; WO2010064165A1 ; WO2009053890A2 ; EP1601030A2 ,

In various embodiments, an electro-optical device 110 . 120 be formed as a film and on or over the optoelectronic device 130 be glued, for example, with an adhesive according to one of the embodiments shown above. In one embodiment, the adhesive may be that for adhering an electro-optical device 110 . 120 is also used as Auskoppelschicht be set up, as described in more detail below.

The electro-optical component 110 . 120 may be formed such that by means of applying a control signal to the electro-optical component 110 . 120 the optical properties of the electro-optical component 110 . 120 be changed, for example, the transmission, absorption and / or reflection of electromagnetic radiation by / in / of the electro-optical device 110 . 120 , A control signal may, for example, the change of a to the electro-optical component 110 . 120 applied voltage or a change in the current through the electro-optical device 110 . 120 be (see 5 and 6 ).

For example, the optical characteristics can be changed in a range of 0% (no change) to 100% (full change).

In various embodiments, an electro-optical device 110 . 120 be formed such that the optical properties of the electro-optical component abrupt, ie instantaneous, discontinuous; change with the application of a control signal to the electro-optical device.

In various embodiments, an electro-optical device 110 . 120 be formed such that the optical properties of the electro-optical component continuously, ie, flowing, steadily; change with the application of a control signal to the electro-optical device.

In various embodiments, the optoelectronic component 130 independent of the electro-optical components 110 . 120 driven, for example, the optoelectronic device is operated in a DC mode. This is at a certain emission ratio of the optoelectronic component 130 , the transmissivity and reflectivity of the optoelectronic component 130 Discreet, ie different discrete settings are possible.

In various embodiments, a static coupling-out layer 126 . 128 and / or a self-regulating decoupling layer 126 . 128 in the optoelectronic component device 100 be provided (shown in 1b d).

A decoupling layer 126 . 128 can, for example, as an external Auskoppelfolie 126 . 128 on or above the vehicle 102 or as an internal coupling-out layer (not shown) in the layer cross-section of the optoelectronic component 130 be educated.

The decoupling layer 126 . 128 may comprise a matrix and scattering centers distributed therein, wherein the layer cross-section-averaged refractive index (average refractive index) of the coupling-out layer 126 . 128 smaller or larger than the middle one Refractive index of the layer from which the electromagnetic radiation is provided. The decoupling layer 126 . 128 and / or the scattering centers can, for example, according to one of the embodiments of the adhesive layer 122 be furnished.

A self-regulating decoupling layer 126 . 128 For example, the matrix or scattering centers may comprise a substance or a substance mixture whose refractive index changes with temperature such that the refractive index difference of the scattering centers relative to the matrix is less than 0.05 at a first operating temperature of the optoelectronic component device and greater than 0 at a second operating temperature , 05 is. In one embodiment, the scattering centers and / or the matrix may comprise or be formed from a thermotropic substance.

An external coupling can be understood to mean devices in which light decouples from the substrate into radiated light. Such a device may for example be a film with scattering particles or a surface structuring, for example microlenses. The film can for example be applied to the substrate outside. Further possibilities may be a direct structuring of the substrate outside or the introduction of scattering particles into the substrate, for example into a glass substrate.

In various embodiments, a static coupling-out layer 126 . 128 and / or a self-regulating decoupling layer 126 . 128 in the beam path of the light emitted by the optoelectronic component on one of the electro-optical components 110 . 120 be provided ( 1b ).

In various embodiments, a static coupling-out layer 126 . 128 and / or a self-regulating decoupling layer 126 . 128 in the beam path of the light emitted by the optoelectronic component between one of the electro-optical components 110 . 120 and the optoelectronic component 130 be provided ( 1c ).

In various embodiments, one or more static decoupling layer (s) may be used. 126 . 128 and / or one or more self-regulating decoupling layer (s) 126 . 128 be arranged in the beam path of the light emitted by the optoelectronic component, according to the embodiments of 1b and 1c , An embodiment of a plurality of possible combinations of several coupling-out layers 126 . 128 with respect to a first electro-optical component 110 and a second electro-optical device 120 is shown in 1d ,

In various embodiments, in addition or instead of the decoupling layer (s) 126 . 128 optically functional layers may be provided, for example, scattering layers, effect films, glitter films, color films, transparent films or nontransparent / opaque films with, for example, image information, for example a pictogram, ideogram or lettering; electrochromic layers, photochromic layers and / or a display.

In various embodiments, the optoelectronic component can generally be a light-emitting component, for example a light-emitting diode, an organic light-emitting diode, a laterally into the carrier 102 Light-coupled (organic) light-emitting diode, also referred to as side-coupled LED / OLED, a fluorescent tube, an incandescent lamp, a compact fluorescent lamp.

In various embodiments, the optoelectronic component device may be formed as a mechanically flexible component, for example as a bendable OLED.

2 shows a schematic cross-sectional view of an optoelectronic component device according to various embodiments according to one of the embodiment of the descriptions of 1a to 1d and a controller 202 ,

The control unit 202 can by means of electrical connections 206 with the first electro-optical component 110 be electrically connected and this drive.

The control unit 202 can by means of electrical connections 208 with the second electro-optical component 120 be electrically connected and this drive.

The control unit 202 can by means of electrical connections 204 and the contact pads 114 . 116 with the optoelectronic component 130 be electrically connected and this drive.

The control unit 202 may include a pulse modulator (not shown) and various voltage waveforms and / or current waveforms to the with the control unit 202 connected electrical components 110 . 120 . 130 provide.

The control unit 202 It can be designed with the control unit 102 connected electrical components 110 . 120 . 130 independently controlled, that is energized, can be.

The driving of the electro-optical components 110 . 120 can by means of a to the electro-optical components 110 . 120 applied voltage or an applied current. The optical properties of the electro-optical components 110 . 120 can by means of changing the pulse width or the pulse frequency of the voltage pulses, for example by means of a pulse width modulation (PWM), a pulse frequency modulation (PFM); and / or by means of a change of the control voltage, for example by means of a pulse amplitude modulation (PAM) or a direct current modulation (DCM); be realized, for example in the form of a pulse code modulation (PCM). A PWM and PFM control can be used, for example, if the electro-optical components 110 . 120 are formed such that only between two states can be switched, for example, only between an on-state and an off-state.

A PAM and DC drive can be used, for example, if the electro-optical components 110 . 120 are formed such that the optical properties can be adjusted by means of the magnitude and / or the current direction of the applied voltage.

3 shows a schematic representation of a method for operating an optoelectronic component device according to various embodiments.

Shown are appearances of optoelectronic component devices with regard to the light emission in light-emitting optoelectronic component for a first optoelectronic component device 302 with only a first electro-optical component 110 , for a second optoelectronic component device 304 with an optoelectronic component 130 between a first electro-optical component 110 and a second electro-optical device 120 (According to one embodiment of the description of 1 ); for a third optoelectronic component device 306 with only a second electro-optical component 120 ; and for a fourth (conventional) optoelectronic component device without electro-optical components.

For the description is a simplified representation with a same optoelectronic device 130 for the four illustrated optoelectronic component devices 302 . 304 . 306 . 308 accepted. The optoelectronic component 130 is in these illustrated cases as a transparent organic light emitting diode 130 set up, which can emit light up and down. The optically active surface which emits light upwards may, for example, be referred to as the first optically active region and the surface which emits light downwards may be referred to as the second optically active region.

In the following case consideration, an electro-optical component can be optically inactivating and prevent emission from an optically active region (shown by means of the arrow) 322 ), for example, in which the electro-optical component reflects, reflects, filters and / or absorbs light which is emitted from an optically active region. An electro-optical device is optically transparent when it does not change the light emitted from an optically active region by means of the arrow 324 , For the case consideration, the appearance of the optoelectronic component device is shown, for example in case considerations, in which an electro-optical component is optically inactivated, but this is not provided in the optoelectronic component device.

In a first case 310 is the first electro-optical device 110 optically inactivating and the second electro-optical component 120 switched transmissive. In the first case 310 becomes in the first optoelectronic component device 302 and the second optoelectronic component device 304 suppressing the emission of light upwards, so that light is emitted only from the second optically active region downwards. The third optoelectronic component device 306 and the fourth optoelectronic component device 308 emit light up and down.

In a second case 320 are the first electro-optical device 110 and the second electro-optical device 120 switched transmissive. In the second case 320 emit all considered optoelectronic device device 302 . 304 . 306 . 308 Light up and down.

In a third case 330 are the first electro-optical device 110 and the second electro-optical device 120 optically inactivating switched. In the third case 330 emits the first optoelectronic component device 302 Light only down, the second optoelectronic device device 304 no light, the third optoelectronic component device 306 Light only upwards and the fourth optoelectronic component device 308 Light up and down.

In a fourth case 340 is the first electro-optical device 110 transmissive and the second electro-optical device 120 optically inactivating switched. In the fourth case 340 becomes in the third optoelectronic component device 306 and the second optoelectronic components device 304 stop the emission of light down so that light is emitted only from the first optically active region upwards. The first optoelectronic component device 302 and the fourth optoelectronic component device 308 emit light up and down.

From the case study 310 . 320 . 330 . 340 It can be seen that it is with the second optoelectronic component device 304 it is possible to switch an optoelectronic component device optically inactive, although the optoelectronic component is optically active.

4a , b show schematic illustrations of optoelectronic component devices in a method for operating an optoelectronic component device.

In various embodiments, the first electro-optical device may / may 110 and / or the second electro-optical component 120 be designed as an electrically tunable mirror, an electrically tunable diaphragm, or an electrically tunable filter.

A transparent optoelectronic component 130 may be due to transparent electrical contacts and the organic functional layer structure (see 1a ), for example, have a transparency of about 50%. Depending on the configuration of the electro-optical component, the appearance of the optoelectronic component can be changed, for example, whether an optoelectronic component switched optically inactivating 110 . 120 to appear as a mirror or a colored shiny or dull surface. When viewing an electro-optical component through a transparent optoelectronic component, the inside may have a different appearance than the outside of the electro-optical component. The outside and inside can appear different, even in isotropic design of the electro-optical device. The reason for this, when viewing the inside, may be, for example, scatter layers and / or coupling-out layers in the beam path of the observer, for example in the optoelectronic component. As a result, depending on the control of the electro-optical components and the viewing direction, different appearances for an optoelectronic component device can be realized.

Illustrative are for the case considerations 310 . 320 . 330 . 340 the appearance of the optoelectronic component device 302 . 304 . 306 . 308 for a viewing direction of the first electro-optical component 110 ( 4a ) and its viewing direction on the second electro-optical component 120 ( 4b ).

In the first case 310 is at a glance 410 towards the first electro-optical device 110 ( 4a ) in the first optoelectronic component device 302 and the second optoelectronic component device 304 the outside of the first electro-optical component 110 visible, noticeable. The third optoelectronic component device 306 and the fourth optoelectronic component device 308 appear transparent.

In the first case 310 is at a glance 420 toward the second electro-optical device 120 ( 4b ) in the first optoelectronic component device 302 and the second optoelectronic component device 304 the inside of the first electro-optical component 110 visible, noticeable. The third optoelectronic component device 306 and the fourth optoelectronic component device 308 appear transparent.

In the second case 320 appear at a glance 410 towards the first electro-optical device 110 ( 4a ) and at a glance 420 toward the second electro-optical device 120 ( 4b ) the optoelectronic component devices 302 . 304 . 306 . 308 transparent.

In the third case 330 is at a glance 410 towards the first electro-optical device 110 ( 4a ) in the first optoelectronic component device 302 and the second optoelectronic component device 304 the outside of the first electro-optical component 110 visible, noticeable. In the third optoelectronic component device 306 is the inside of the second electro-optical component 120 visible and the fourth optoelectronic component device 308 appears transparent.

In the third case 330 is at a glance 420 toward the second electro-optical device 120 ( 4b ) in the second optoelectronic component device 304 and the third optoelectronic component device 306 the Outside of the second electro-optical component 120 visible, noticeable. In the first optoelectronic component device 302 is the inside of the first electro-optical component 120 visible and the fourth optoelectronic component device 308 appears transparent.

In the fourth case 340 is at a glance 410 towards the first electro-optical device 120 ( 4a ) in the second optoelectronic component device 304 and the third optoelectronic component device 306 the inside of the second electro-optical component 120 visible, noticeable. The first optoelectronic component device 302 and the fourth optoelectronic component device 308 appear transparent.

In the fourth case 340 is at a glance 420 toward the second electro-optical device 110 ( 4b ) in the second optoelectronic component device 304 and the third optoelectronic component device 306 the outside of the second electro-optical component 120 visible, noticeable. The first optoelectronic component device 302 and the fourth optoelectronic component device 308 appear transparent.

From the case study 310 . 320 . 330 . 340 out 4a and 4b It can be seen that it is with the second optoelectronic component device 304 it is possible that the optoelectronic component device as a function of the viewing direction and the control of the electro-optical components 110 . 120 may have more different appearances than the other optoelectronic component devices 302 . 306 . 308 , With the embodiment of the second optoelectronic component devices 100 . 304 For example, the appearance of an optoelectronic component device may have five different appearances, each in the form of the configuration of the inside and the outside of the first electro-optical component 110 and the second electro-optical component 120 as well as transparent. This can be realized because an electro-optical device according to the in 1a Embodiments shown may have optical properties that are dependent on the viewing direction.

In an optoelectronic component devices 302 . 306 with only one electro-optical component and a transparent opto-electronic component with asymmetric emission (see 7 ) Setting the transparency of the optoelectronic component is not possible.

5a 5c show schematic representations of a method for operating an optoelectronic component device according to various exemplary embodiments.

To illustrate the control of the optoelectronic component devices, the control is the example of an optoelectronic device 130 described that a first electromagnetic radiation (indicated by the arrow 500 ) and a second electromagnetic radiation (indicated by the arrow 510 ) to different sides of the optoelectronic component 130 emitted.

5a shows an optoelectronic component device 100 According to one embodiment of the descriptions of 1 and 2 , While the optoelectronic device 130 Light emitted, may / may be the first electro-optical device 110 and / or the second electro-optical component 120 be driven pulsed (see 2 ). The pulsed drive can be designed, for example, as a pulse width modulation (PWM), a pulse frequency modulation (PFM), a pulse amplitude modulation (PAM) and / or a pulse code modulation (PCM). Due to the inertia of the human eye, mixing scenarios of the case considerations can be achieved by means of the pulsed activation 310 . 320 . 330 . 340 the second optoelectronic component device 304 . 100 the description of the 4a , b be realized.

To illustrate the principle of action of the pulsed drive, the effect of a pulsed drive of the first electro-optical component will be described below 110 shown. Merely to simplify the illustration, the optoelectronic component device has the following properties: The first electromagnetic radiation 500 and the second electromagnetic radiation 510 have identical properties, for example, the same brightness, the same hue and the same saturation. Ie. 50% of the optoelectronic device 130 emitted electromagnetic radiation is in the direction of the arrow 500 and the other 50% in the direction of the arrow 510 emitted. The optoelectronic component 130 is between the first electro-optical device 110 and the second electro-optical device 120 arranged. The first electro-optical component 110 and the second electro-optical device 120 are designed as an electrically tunable mirror (see description 1a ) and trained the same. The first electro-optical component 110 can therefore also be referred to below as the first electro-optical mirror 110 and the second electro-optical device 120 hereinafter also as a second electro-optical mirror 120 be designated. An optically inactivating electro-optical mirror reflects the electromagnetic radiation 100% in the opposite direction - for example, in the first case 310 in 3 the up ( 500 ) emitted light down to 100% ( 510 ), so that instead of originally 50% of the total emitted electromagnetic radiation ( 500 + 510 ) is now emitted 100% down.

The proportion of the optoelectronic component 130 upwards and downwards emitted electromagnetic radiation, by means of the control of the electro-optical components 110 . 120 independent of the control of the optoelectronic component 130 be set.

5b -D show different activations of an electro-optical component 110 . 120 , Shown is the transmission 502 as a function of time 504 an electro-optical component 110 . 120 , The duty cycle (Mux) can be the inverse ratio of the transmission time 512 within which is an electro-optical mirror 110 . 120 is transmissive or a high transmission coefficient 502 with respect to the time of a period 506 the control. The switching of the electro-optical device between the high-transmission state and the low-transmission state can be realized, for example, by turning on or looking-out the electro-optical device. It is assumed that the electro-optical component instantaneously follows the electrical pulses when switching on or looking. Furthermore, it is assumed that the eye of a viewer perceives no spectacles and otherwise no electrical or optical losses occur.

For the following consideration of the control ( 5b -D) it is assumed that the second electro-optical component 120 is 100% transparent and the first electro-optical device 110 pulsed is driven.

Shown in 5b and 5c are two different drives, with which a duty cycle of 2 is realized. Such a controlled electro-optical component 110 . 120 is reflective as well as transmissive in the time average, ie is 50% transparent or translucent and 50% reflective. Will only the first electro-optical device 110 so driven, while the second electro-optical device 120 is transmissive (first case 310 - please refer 3 ), is provided by the optoelectronic component device 100 25% of the total electromagnetic radiation emitted upwards and 75% down. The emission ratio of the optoelectronic component device 100 with respect to the first optically active region is thus 1/3.

About the periods 506 . 508 . 510 an electro-optical mirror 110 . 120 may be the average of the reflectance of the electro-optical mirror 110 . 120 to be changed. The period 506 . 508 can be changed for example by means of a pulse frequency modulation. The duty cycle can be adjusted for example by means of a pulse width modulation (shown in FIG 5d ). Such a controlled electro-optical component 110 . 120 has a reflected portion of electromagnetic radiation of, for example, 75%. This allows a duty cycle of 4. The emission ratio of the optoelectronic component device 100 with respect to the first optically active region is thus 1/8.

At a transmission of the first electro-optical mirror 110 in the time average of 100% is the emission ratio of the optoelectronic component device 100 with respect to the first optically active region 1 (in a transparent second electro-optical component) 120 ; third case 330 in 3 ). In other words, the electromagnetic radiation of the optoelectronic component device is emitted in such a way as it is emitted by the optoelectronic component, that is to say 50% upwards and 50% downwards in the above-described assumption.

At a transmission of the first electro-optical mirror 110 on average over 0%, 0% of the total electromagnetic radiation is emitted upwards and 100% downwards. The emission ratio of the optoelectronic component device 100 with respect to the first optically active region is 0 (first case 310 in 3 ).

In an optoelectronic component device 302 . 306 with only one electro-optical component 110 . 120 The range of the possible radiation directions depends on the fundamental radiation of the optoelectronic component 130 For example, in a range between 0% and 70% with respect to the first optically active region. On the other hand, with an optoelectronic component device 100 . 304 with two or more electro-optical components 110 . 120 regardless of the control of the optoelectronic component, the radiation for electromagnetic radiation in both directions 500 . 510 be varied within a range of 0% to 100%.

6a 5c show schematic representations of a method for operating an optoelectronic component device according to various exemplary embodiments.

By means of the control of the electro-optical components 110 . 120 can the optoelectronic properties of this electro-optical component 110 . 120 be set, for example, the reflectivity, the transmission and / or the absorption of electromagnetic radiation to this electro-optical device 110 . 120 ,

An electro-optical device 110 . 120 can be designed and controlled in various embodiments such that the (normalized) reflectivity 604 a function of a to the electro-optical device 110 . 120 applied (normalized) voltage 602 is - shown in 6a , In one embodiment, the electro-optical component 110 . 120 be formed such that the reflection of electromagnetic radiation to the electro-optical component 110 . 120 increases linearly with an applied voltage, for example in a control of the electro-optical component 110 . 120 with a direct current, ie have a direct current modulation (DCM). The illustrated functional relationship between reflectivity and applied voltage can also be used, for example, for pulse amplitude modulation (not shown).

An electro-optical device 110 . 120 can be designed and driven in various embodiments such that the reflectivity 604 electromagnetic radiation to the electro-optical device 110 . 120 can be adjusted by means of a pulse width modulation - shown in 6b , Shown are a first pulse width 608 and a second pulse width 610 , By means of different duty cycles 608 . 610 (Mux) on the electro-optical components 110 . 120 can in time average different reflectivities in the electro-optical components 110 . 120 be realized, for example, a reflectivity of 40% by means of the first pulse width 608 and a reflectance of 60% by means of the second pulse width 610 ,

An electro-optical device 110 . 120 can be designed and driven in various embodiments such that the reflectivity 604 electromagnetic radiation to the electro-optical device 110 . 120 can be adjusted by means of a pulse frequency modulation - shown in 6c , Shown are a first pulse rate 612 and a second pulse width 614 , whereby different reflectivities can be realized in the temporal mean.

In various embodiments, depending on the configuration of the electro-optical component 110 . 120 the control of the electro-optical component 110 . 120 have a mixed form of the above-mentioned modulations, for example in the form of a pulse code modulation.

The electro-optical components 110 . 120 can be designed and controlled such that the transmission, reflection and absorption of electromagnetic radiation by / on / in the electro-optical components 110 . 120 an optoelectronic component device 100 according to one of the illustrated functional relationships of the embodiments of the description of 5a -D and 6a -C is done.

The ratio of the proportions of electromagnetic radiation emitted by the first optically active region and the second optically active region can be determined by means of the design of the optoelectronic component 130 be set, for example, by a coupling-out layer is formed in the beam path of the first optically active region and not in the beam path of the second optically active region. As a result, the optoelectronic component can have optical properties which are dependent on the viewing direction, for example a direction-dependent transmission or reflection. Such directional optical properties may be referred to as an asymmetric emission ratio. An asymmetric emission ratio may, for example, have an emission of 60% of the total electromagnetic radiation from the second optically active region and 40% from the first optically active region.

7 FIG. 10 shows a diagram of a method for operating an optoelectronic component device according to various exemplary embodiments.

Shown is the emission ratio 702 as a function of the mirror pulse ratio 704 for optoelectronic component devices 100 with optoelectronic components 130 different radiation conditions 706 (asymmetric emission).

The functional relationship of the radiation ratio 702 the optoelectronic component device 100 is characterized in the selected representation by a discontinuity of the derivative for a mirror pulse ratio 704 from 1 out.

In the diagram shown, only one electro-optical component is pulsed (see 5 and 6 ), while the other electro-optical device is transparent.

It can be seen that in an optoelectronic component device having two electro-optical components, it is possible to change the emission characteristic of the optoelectronic component in a range from approximately 0% to approximately 100%. Furthermore, when changing the mirror pulse ratio 704 at constant emission ratio 702 the transparency of the optoelectronic component can be changed, which approximates a change in the fundamental radiation 706 equivalent.

The following is an example of the calculations of some of the illustrated data points:
In an optoelectronic device 130 , in which 50% of the total electromagnetic radiation is emitted upwards and 50% downwards (see above), the emission ratio of the optoelectronic component is 130 with respect to the second optically active region: 1.00 / 1.

In an optoelectronic device 130 in which 60% of the total electromagnetic radiation is emitted downwards and 40% upwards, the emission ratio of the optoelectronic component is 130 for the second optically active region: 1.50 / 1.

In the optoelectronic component device 100 with a radiation ratio of the optoelectronic component 130 of 1.00 / 1 and a drive (PWM, PFM, PAN, DCM) of the electro-optical components 110 . 120 in which the first electro-optical device 110 is 100% transparent and the second electro-optical device is 60% transparent, resulting in a mirror pulse ratio of 0.6. As a result, 64% of the total electromagnetic radiation is emitted upwards and 36% emitted downwards, which results in a radiation ratio of the optoelectronic component device 100 of 0.5625. In the optoelectronic component device 100 with a radiation ratio of the optoelectronic component 130 of 1.00 / 1 and the same control is emitted 70% of the total electromagnetic radiation up and 30% down, bringing a radiation ratio of the optoelectronic component device 100 of 0.4286.

In the optoelectronic component device 100 with a radiation ratio of the optoelectronic component 130 of 1.50 / 1 and a drive (PWM, PFM, PAN, DCM) of the electro-optical components 110 . 120 in which the second electro-optical component 110 is 100% transparent and the first electro-optical device is 40% transparent, results in a mirror pulse ratio of 2.5. As a result, 84% of the total electromagnetic radiation is emitted downwards and emitted 16% upwards, which results in a radiation ratio of the optoelectronic component device 100 of 5.2500. In the optoelectronic component device 100 with a radiation ratio of the optoelectronic component 130 of 1.00 / 1 and a drive in which the second electro-optical device 110 is 100% transparent and the first electro-optical device is 20% transparent, resulting in a mirror pulse ratio of 5. Thus, 90% of the total electromagnetic radiation is emitted upwards and 10% downwards, bringing a radiation ratio of the optoelectronic component device 100 of 9,0000 results.

In the optoelectronic component device 100 with a radiation ratio of the optoelectronic component 130 of 1.00 / 1 and a drive (PWM, PFM, PAM, DCM) of the electro-optical components 110 . 120 in which the first electro-optical device 110 is transparent to 20% and the second electro-optic device is 90% transparent, 90% of the total electromagnetic radiation is emitted downwards and 10% emitted upwards, resulting in a radiation ratio of the optoelectronic component device 100 of 0.1111.

In the optoelectronic component device 100 with a radiation ratio of the optoelectronic component 130 of 1.50 / 1 and a drive (PWM, PFM, PAM, DCM) of the electro-optical components 110 . 120 in which the first electro-optical device 110 is 100% transparent and the second electro-optical device is transparent to 0%, results in a mirror pulse ratio of 0. Thus, 100% of the total electromagnetic radiation is emitted upward and emitted 0% upwards, bringing a radiation ratio of the optoelectronic component device 100 of 0 results. In the optoelectronic component device 100 with a radiation ratio of the optoelectronic component 130 of 1.00 / 1 and a drive in which the first electro-optical device 110 is transparent to 0% and the second electro-optical device is 60% transparent, results in a mirror pulse ratio of infinity. As a result, 0% of the total electromagnetic radiation is emitted upwards and 100% downwards, which results in a radiation ratio of the optoelectronic component device 100 of infinite results.

In various exemplary embodiments, the control signal of the optoelectronic component can be set up as an input signal of the first electro-optical component and / or of the at least one second electro-optical component.

In various exemplary embodiments, the control signal of the first electro-optical component and / or of the at least one second electro-optical component can be set up as an input signal of the optoelectronic component.

8th shows a conventional optoelectronic device.

A conventional optoelectronic device 800 has a first electrode 804 on a carrier 802 on. On the first electrode 804 is an organic functional layered structure 806 educated. About the organic functional layer structure 806 is a second electrode 808 educated. The second electrode 808 is by means of an electrical insulation 812 from the first electrode 804 electrically isolated. On the second electrode 808 is a barrier thin film 816 arranged such that the second electrode 808 , the electrical insulations 812 and the organic functional layer structure 806 from the barrier thin film 816 are surrounded. The barrier thin film 816 is intended to hermetically seal the enclosed layers with respect to harmful environmental influences. On the barrier thin film 816 is an adhesive layer 818 arranged such that the adhesive layer 818 the barrier thin film 816 flat and hermetically sealed against harmful environmental influences. On the adhesive layer 818 is a cover 820 arranged. The cover 820 is on the barrier thin film 816 with an adhesive 820 glued.

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided with which it is possible to change the appearance and the beam direction of OLED area light sources in the switched-off state and / or in the switched-on state.

This makes it possible to continuously or discretely change the emission characteristic of the front side and / or rear side of a transparent OLED area light source as a function of the transparency of the OLED area light source. The emission characteristic of one side of the surface light sources can be changed in terms of the transmittance in a range of 0% to 100%. Furthermore, the appearance of the optically active times of the OLED area light sources in the off state, that is, in the optically inactive state of the OLED can be changed. The property of the appearance of an optically inactive side in the off state may include, for example, the transmissivity or reflectivity. Regardless of operating parameters of the OLED, the brightness of the OLED area light sources can be regulated. Furthermore, the production of an OLED area light source according to various embodiments is technically easily possible, for example by an electrically switchable mirror structure, such as an electrically switchable mirror film or an electrically switchable mirror glass, is glued to the OLED. Furthermore, the electrically switchable mirror structure can act as an encapsulation for the OLED. Furthermore, the electrically switchable mirror structure, for example in the form of an electrically switchable mirror foil or an electrically switchable mirror glass, enables a modular structure of an OLED area light source with a plurality of mirror structures.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 10031294 A1 [0004, 0180]
• DE 102007022090 A1 [0004, 0180]
• WO 199803896 A1 [0004, 0181]
• WO 199841899 A1 [0004, 0181]
• WO 2010064165 A1 [0004, 0181]
• WO 2009053890 A2 [0004, 0181]
• EP 1601030 A2 [0004, 0181]

Cited non-patent literature

• J. Jacobsen et al., IBM System Journal 36 (1997) 457-463 [0004]
• B. Comiskey et al. Nature 394 (1998) 253-255 [0004]
• J. Jacobsen et al., IBM System Journal 36 (1997) 457-463 [0181]
• B. Comiskey et al. Nature 394 (1998) 253-255 [0181]

Claims (16)

Optoelectronic component device ( 100 . 302 ), comprising: • a radiation source ( 130 ) having a first optically active region and a second optically active region, wherein the first optically active region is for emitting a first electromagnetic radiation ( 500 ) and the second optically active region is for emitting a second electromagnetic radiation ( 510 ) is set up; and a first electro-optical component ( 110 ) and at least one second electro-optical component ( 120 ); wherein the first electro-optical component ( 110 ) and the at least one second electro-optical component ( 120 ) in the beam path of the radiation source ( 130 ) are arranged to each other such that the first electromagnetic radiation ( 500 ) is changed in a different way than the second electromagnetic radiation ( 510 ), so that the first electromagnetic radiation ( 500 ) in at least one property of the second electromagnetic radiation ( 510 ) is different. Optoelectronic component device ( 100 . 302 ) according to claim 1, wherein the radiation source ( 130 ) as a surface light source ( 130 ), wherein the surface normal of the first optically active region has a different orientation than the surface normal of the second optically active region. Optoelectronic component device ( 100 . 302 ) according to one of claims 1 or 2, wherein the surface light source ( 130 ) as an organic light emitting diode ( 130 ) is set up. Optoelectronic component device ( 100 . 302 ) according to one of claims 1 to 3, • wherein the first electro-optical component ( 110 ) is formed in the beam path of the first optically active region; and / or wherein the second electro-optical component ( 120 ) is formed in the beam path of the first optically active region and / or the second optically active region. Optoelectronic component device ( 100 . 302 ) according to one of claims 1 to 4, further comprising: a control device ( 202 ), wherein the first electro-optical component ( 110 ), the second electro-optical component ( 120 ) and / or the radiation source ( 130 ) with the control device ( 202 ) are electrically connected. Optoelectronic component device ( 100 . 302 ) according to claim 5, wherein the control device ( 202 ) is designed such that the optoelectronic properties of the first electro-optical component ( 110 ), of the at least one second electro-optical component ( 120 ) and the radiation source ( 130 ) are changed independently. Optoelectronic component device ( 100 . 302 ) according to one of claims 1 to 6, wherein the radiation source ( 130 ) is designed such that the first electromagnetic radiation ( 500 ) and the second electromagnetic radiation ( 510 ) are approximately the same or different in at least one of the following properties: • hue; • saturation; or • brightness. Optoelectronic component device ( 100 . 302 ) according to one of claims 1 to 7, wherein the first electro-optical component ( 110 ) and the at least one second electro-optical component ( 120 ) are arranged such that the first optically active region and the second optically active region differ in at least one of the following properties: reflectivity; • absorption; or • Transmittivity. A method of manufacturing an optoelectronic component device, the method comprising: • forming a radiation source ( 130 ) having a first optically active region and a second optically active region, wherein the first optically active region is for emitting a first electromagnetic radiation ( 500 ) is formed and the second optically active region for emitting a second electromagnetic radiation ( 510 ) is trained; and • forming a first electro-optical component ( 110 ) and forming at least one second electro-optical component ( 120 ); wherein the first electro-optical component ( 110 ) and the at least one second electro-optical component ( 120 ) in the beam path of the radiation source ( 130 ) are formed to one another such that the first electromagnetic radiation ( 500 ) is changed in a different way than the second electromagnetic radiation ( 510 ), so that the first electromagnetic radiation ( 500 ) in at least one property of the second electromagnetic radiation ( 510 ). Method according to claim 9, wherein the radiation source ( 130 ) as a surface light source ( 130 ), wherein the surface normal of the first optically active region has a different orientation than the surface normal of the second optically active region. Method according to one of claims 9 to 10, wherein the surface light source ( 130 ) as an organic light emitting diode ( 130 ) is established. Method according to claim 11, wherein the organic light-emitting diode ( 130 ) is formed transparent or translucent. Method according to one of claims 9 to 12, wherein the first electro-optical component ( 110 ) is formed in the beam path of the first optically active region; and / or wherein the second electro-optical component ( 120 ) is formed in the beam path of the first optically active region and / or the second optically active region. Method according to one of claims 9 to 13, wherein the first electro-optical component ( 110 ) and the at least one second electro-optical component ( 120 ) are arranged such that the first optically active region and the second optically active region differ in at least one of the following properties: reflectivity; • absorption; or • Transmittivity. A method of operating an optoelectronic component device, the method comprising: driving an optoelectronic component device according to one of claims 1 to 14; Wherein the first electro-optical component ( 110 ) and the at least one second electro-optical component ( 120 ) are controlled differently, so that the first electromagnetic radiation ( 500 ) is changed in a different way than the second electromagnetic radiation ( 510 ), so that the first electromagnetic radiation ( 500 ) in at least one property of the second electromagnetic radiation ( 510 ). A method according to claim 15, wherein the first electro-optical component is driven in such a way that the first optically active region at least partially transmits a first electromagnetic radiation ( 500 ) emitted.

Images