DE102013105228A1 - Optoelectronic assembly, method of operating an optoelectronic assembly, and method of fabricating an optoelectronic assembly - Google Patents

Abstract

In various embodiments, an optoelectronic assembly (10) is provided which includes a flexible organic light emitting diode (7) for generating and emitting light and a sensor element (9) directly physically coupled to the organic light emitting diode (7) and detecting a curvature value representative of a curvature of the flexible organic light emitting diode (7).

Description

The invention relates to an optoelectronic assembly, a method for operating an optoelectronic assembly and a method for producing an optoelectronic assembly.

Flexible surface light sources, for example organic light-emitting diodes (OLEDs), consist of bendable materials, such as, for example, foils, contact layers and / or organic layers. In a change in the shape of the luminous surface of the flexible surface light sources, the light intensity changes at a predetermined location in space, since the illuminated by the surface light source solid angle range is changed, the total amount of light emitted remains unchanged with unchanged control of the surface light source. When bending the organic light-emitting diodes thus the illuminated solid angle range and the light intensity in the illuminated solid angle range are coupled to each other coupled. The light intensity can be kept constant in the illuminated solid angle range of the surface light source at the predetermined location in the room by means of manual dimming or externally connected sensors, for example photodiodes, phototransistors or photothyristors, with electronic circuit. Thus, with an independent setting of a parameter, for example the illuminated solid angle range, for example due to a deformation of the luminaire with the flexible area light source, for example to illuminate two workstations instead of one workstation, the other parameter, for example the generated luminous flux and / or the emitted light quantity, be readjusted in response to the change of the first parameter. For example, the luminous flux or the amount of light can be adjusted so that both workplaces are adequately illuminated. However, this requires either a large interconnection and / or wiring effort and thus additional costs or the method is not automated, with the manual readjustment, the vote on actually existing lighting conditions is inaccurate, energy can be wasted unnecessarily and / or incorrect lighting conditions can be set ,

Furthermore, the flexible flexible surface light sources basically consist of materials which may break when a critical bending radius is reached or where excessive bending may cause cracks which may limit the optoelectronic functionality. As a result of the excessive bending, the storage time can also be reduced due to a mechanically impaired encapsulation layer, which has cracks, for example. Such fractures or cracks can be detected, for example, by means of visual inspection, in particular with the human eye. For example, these cracks can cause dark areas in the luminous area, which may also be referred to as "dark spots".

In various embodiments, an optoelectronic assembly is provided which has a flexible light emitting diode and which allows in a simple manner to ensure a constant or at least approximately constant light intensity at a predetermined location in the illuminated solid angle range, and / or which contributes to damage of the flexible light emitting diode to prevent.

In various embodiments, a method for operating an optoelectronic assembly having a flexible light emitting diode is provided, which allows in a simple manner to ensure a constant or at least approximately constant light intensity at the predetermined location in the illuminated solid angle range, and / or contributes to to prevent damage to the flexible light emitting diode.

In various embodiments, a method for producing an optoelectronic assembly having a flexible light-emitting diode is provided, which allows in a simple manner that a constant or at least approximately constant light intensity can be ensured at the predetermined location in the illuminated solid angle range by means of the optoelectronic assembly, and / or which helps to prevent damage to the flexible light emitting diode during operation of the optoelectronic assembly.

In various embodiments, an optoelectronic assembly is provided. The optoelectronic assembly comprises a flexible organic light emitting diode for generating and emitting light and a sensor element which is designed and arranged such that it detects a curvature value which is representative of a curvature of the flexible organic light emitting diode. The sensor element is directly physically coupled to the organic light emitting diode.

The detection of the curvature value and the associated recognition of the curvature of the flexible organic light-emitting diode allows an automatic control, for example an exact automatic control of the flexible organic light emitting diode with respect to the light intensity at the predetermined location in the illuminated solid angle range depending on the curvature. In this way, a constant or at least approximately constant light intensity can always be ensured, for example, in different curvature states of the flexible organic light-emitting diode at the predetermined location in the illuminated solid angle range. It can also be a critical one Radius of curvature can be detected and during operation of the flexible organic light emitting diode, an automatic warning can be generated so that the critical radius of curvature is not reached or not exceeded or when the critical radius of curvature is already exceeded.

For example, the sensor element can be arranged on the outside of the light-emitting diode or can be integrated together with the organic light-emitting diode in a component. This can help to minimize circuit complexity. The curvature value may be, for example, a luminance value, a luminous intensity value or a brightness value.

In various embodiments, the optoelectronic assembly has a logic unit which is electrically coupled to the sensor element and which performs a predetermined action in response to a signal of the sensor element. The logic unit may have an electronic circuit which is externally formed with respect to the optoelectronic assembly or which is formed internally in the optoelectronic assembly and / or hybrid with the flexible organic light emitting diode and the sensor element. The signal of the sensor element is representative of the curvature of the flexible organic light emitting diode. The predetermined action is, for example, the automatic generation of the warning and / or relates to the readjustment of the flexible organic light emitting diode with respect to the light intensity.

In various embodiments, the organic light-emitting diode and the sensor element have a common carrier. For example, the flexible organic light-emitting diode and the sensor element have a common layer structure on the carrier and / or have been co-manufactured in the same method based on the carrier. For example, the flexible organic light-emitting diode and the sensor element are monolithically integrated in one component. The sensor element may be referred to in this context as an internal sensor element. The internal sensor element helps to be able to dispense with an external sensor element, whereby the circuit complexity can be further reduced. Furthermore, this makes it possible to integrate the formation of the sensor element into the process control for producing the flexible organic light-emitting diode, without any substantial change in the process control compared to conventional area radiators and / or without additional expenditure and additional costs. The corresponding optoelectronic assembly as a freely manageable component without mechanically inherent protection against excessive deformation can warn against such, so that failures and / or damage can be avoided. In particular, the internal sensor element and possibly an internal display element as a signal generator generate little or no additional cost, since they use the same or a very similar structure as the actual functional part, the flexible organic light emitting diode.

The surface of the internal sensor element can be adapted so that a sufficiently stable photovoltage and / or a sufficiently stable electrical resistance is produced during operation, without producing instability of the flexible organic light-emitting diode, for example due to unstable feedback. In this way, when the curvature of the flexible organic light-emitting diode changes, the emitted light quantity per solid angle and thus the light intensity at the predetermined location can be kept constant or adapted to external desired conditions. Furthermore, a plurality of laterally distributed internal sensor elements may be formed. By means of the lateral scattering of the internal sensor elements via the luminous area, the corresponding sensor element can be assigned to each solid angle element.

Alternatively, the sensor element may be disposed outside the flexible organic light emitting diode and directly physically coupled thereto. For example, the sensor element may have one or more strain gauges, which are arranged on the outside of a surface of the flexible organic light-emitting diode.

In various embodiments, the sensor element is configured and arranged to detect at least a portion of the light generated by the organic light emitting diode for detecting the curvature value, wherein the detected light is representative of the curvature of the flexible organic light emitting diode. For example, light can be detected with the sensor element which is emitted by the flexible organic light-emitting diode and / or which is reflected or scattered toward the sensor element. Alternatively or additionally, in the case of an internal sensor element, the light from the flexible organic light-emitting diode can be conducted internally to the internal sensor element, for example by means of an internal optical waveguide, for example a transparent carrier or encapsulation material for the light. In bending the flexible organic light emitting diode, in which the curvature state changes, the intensity of the radiated light, the reflected or scattered light and / or the internally conducted light also changes. The change in the light intensity has an effect on the output signal of the sensor element, which thus outputs an altered curvature value, which is representative of the curvature of the flexible organic light-emitting diode. Alternatively to the Light intensity can also be detected a luminance or a brightness.

In various embodiments, the optoelectronic assembly comprises a display element having the common carrier. For example, the flexible organic light-emitting diode, the sensor element and the display element have a common layer structure having the carrier and / or have been produced together in the same method based on the carrier. For example, the flexible organic light-emitting diode, the sensor element and the display element are monolithically integrated in one component. The display element may be referred to in this context as an internal display element. The internal display element helps to be able to dispense with an external display element, whereby the circuit complexity can be further reduced. The display element can thus serve as a further flexible organic light emitting diode. Alternatively or in addition to the display element on the common carrier, an external and / or acoustic display element may be provided. The display element can serve to signal the curvature and / or the critical radius of curvature. The predetermined action, which is carried out as a function of the curvature value, may include, for example, driving the display element. The display element can be used to output a warning signal.

In various embodiments, an optically sensitive region of the sensor element and / or an optically active region of the display element have at least one organic functional layer. The organic functional layers of the sensor element and / or the display element may be formed corresponding to a configuration of the organic functional layers of the flexible organic light emitting diode. For example, the organic functional layers of the sensor element and / or the display element may be formed in the same process and / or simultaneously as the organic functional layers of the flexible organic light emitting diode. Due to the hybrid integration of at least one small separated area as an internal sensor element, which may have the same layer structure as the flexible organic light emitting diode, for internal light detection, the internal sensor element in comparison with the flexible organic light emitting diode inverse operation (with or without bias) as a photodiode or Photoconductors are used. Depending on the light intensity of the incident and / or internally conducted light, a photovoltage is generated or a change in resistance is produced on the internal sensor element, which increases in magnitude the higher the incident light intensity. The light intensity changes with the curvature, and thus the photovoltage or the resistance change is dependent on the curvature of the flexible organic light-emitting diode and / or the brightness of the solid angle range illuminated by the flexible organic light-emitting diode. This photovoltage or this changed resistance is the output signal of the sensor element which is processed in the logic unit, which can indicate the reaching or exceeding of the critical bending radius depending on it by means of an optical or acoustic signal and / or can adapt a light intensity to be emitted accordingly.

In various embodiments, the optoelectronic assembly includes a shadow element for shadowing light that forms an overlap region with the sensor element. For example, the shadow element shadows the sensor element, in particular the internal sensor element, from external light, so that the signal of the sensor element depends exclusively or at least largely on the internally conducted light. This can help increase the accuracy of detecting the curvature value, especially if there are multiple light sources and the external light also has light emitted from the other light sources. The fact that the shadow element and the sensor element form an overlap region means that in the direction of an optical path of the light, the shadow element, the sensor element overlaps, so that at least part of the light is blocked by the shadow element and does not reach the sensor element. The shadow element may be formed integrally on the outside of a surface of the sensor element and / or the flexible organic light emitting diode or internally in the layer structure of the sensor element and / or the flexible organic light emitting diode.

In various embodiments, the optoelectronic assembly has an internal optical fiber optically coupled to the organic light emitting diode and the sensor element such that the internal optical fiber internally conducts at least a portion of the light generated by the flexible organic light emitting diode toward the sensor element. For example, the internal conduction of the light may be due in large part to internal total reflection of the light. Upon bending of the optoelectronic assembly, the internal optical fiber is also bent, thereby changing the light intensity of the light striking the internal sensor element. The changed light intensity is representative of the curvature of the optoelectronic assembly. The internal light pipe and in particular the internal light guide allow independent or at least largely independent of external reflection and / or scattering of to detect the curvature value of the flexible organic light emitting diode and / or to detect the curvature.

In various embodiments, the light guide is formed by the carrier. For example, the support for the light generated by the flexible organic light emitting diode may be transparent. Alternatively or in addition to the carrier, a substrate having the carrier, a cover layer and / or an encapsulation material, by means of which the organic functional layers of the flexible organic light emitting diode and the sensor element are encapsulated, be formed as a light guide and / or transparent to that of be the light generated by the flexible organic light emitting diode. As a result of the hybrid integration of the light guide, at least part of the layer structure of the optoelectronic assembly functions as an optical waveguide, it being possible to deduce its curvature and thus the curvature of the optoelectronic assembly as a result of the losses of the optical waveguide.

In various embodiments, a method of operating an optoelectronic assembly, such as the optoelectronic assembly discussed above, is provided. In this case, light is generated and emitted by means of the flexible organic light-emitting diode of the optoelectronic assembly. The curvature value representative of a curvature of the flexible organic light emitting diode is detected by means of the sensor element which is directly physically coupled to the flexible organic light emitting diode, and depending on the detected curvature value, the predetermined action is performed.

In various embodiments, the predetermined action includes outputting a signal representative of the curvature of the flexible organic light emitting diode. The signal may be the warning signal, which is displayed for example by means of the flexible organic light-emitting diode or by means of the display element. Thus, depending on the mechanical load, in particular the curvature, of the flexible organic light-emitting diode, the signal can be generated which warns against overloading. Alternatively or additionally, the signal can effect a readjustment of the flexible organic light-emitting diode. Optionally, depending on the signal, the operation of the flexible organic light-emitting diode and / or of the display element can be varied, for example, an emitted color can be varied, the flexible organic light-emitting diode can be switched off, switched on, turned on, and / or the emitted luminous flux can be varied. to act as a warning. The hybrid formed display element can be used as a warning display and / or warning light. In addition, an external warning information display can take place with respect to the optoelectronic assembly. Furthermore, a small energy store, for example for storing electrical energy, can be arranged and used to generate the warning if the OLED is not connected to an external power supply.

In various embodiments, the signal is representative that a critical curvature of the flexible organic light emitting diode is nearly reached, reached or exceeded.

In various embodiments, the predetermined action includes driving the flexible organic light emitting diode. The control can be done for example in the course of readjustment. For example, the organic light-emitting diode can be controlled so that the emitted light flux and / or the amount of light emitted increases or decreases. In this way, the generated light intensity can be kept constant or approximately constant, for example. The fact that the light intensity is kept approximately constant, in various embodiments may mean, for example, that the light intensity changes so little that a user of the optoelectronic assembly perceives the light intensity or the brightness generated by the optoelectronic assembly as unchanged.

In various embodiments, the organic light-emitting diode is driven so that the light intensity remains approximately constant or constant at the predetermined location in the illuminated solid angle range. In particular, the luminous flux of the flexible organic light emitting diode can be adapted to changing external conditions due to the changed curvature. Furthermore, a constant illumination at the location of the flexible organic light emitting diode and / or the sensor element can be generated. Thus, a readjustment of the lighting by an automated electronic circuit as a function of the light intensity and the curvature of the flexible organic light emitting diode is possible.

In various embodiments, a method for producing an optoelectronic assembly, for example the optoelectronic assembly explained above, is provided. In this case, the flexible organic light emitting diode is designed for generating and emitting light. The sensor element that detects the curvature value that is representative of a curvature of the flexible organic light emitting diode is formed and directly physically coupled to the organic light emitting diode.

That the sensor element physically directly with the flexible organic light emitting diode is coupled, for example, mean that the sensor element is arranged on the outside of the flexible organic light emitting diode. For example, the sensor element has the one or more strain gauges, which is or are arranged on the outside of the surface of the flexible organic light-emitting diode. Alternatively, the sensor element can be physically coupled directly to the flexible organic light-emitting diode by being formed as an internal sensor element together with the flexible organic light-emitting diode in a monolithic optoelectronic component.

In various embodiments, the flexible organic light emitting diode and the sensor element are formed on the common carrier. The flexible organic light-emitting diode and the sensor element may, for example, have the same or at least a similar layer structure. The monolithic optoelectronic component is formed by the flexible organic light-emitting diode and the sensor element with the common carrier.

In various embodiments, a method of operating an optoelectronic assembly, such as the optoelectronic assembly discussed above, is provided. In this case, light is generated and emitted by means of the flexible organic light-emitting diode of the optoelectronic assembly. The flexible organic light emitting diode is curved by means of an actuator. The curvature value, which is representative of the curvature of the flexible organic light emitting diode, is determined as a function of a control of the actuator and / or a position of an actuating element of the actuator. Depending on the determined curvature value, the predetermined action is performed. This makes it possible to dispense with a sensor for detecting the curvature value, since the curvature value can be derived directly from the actuation and / or position of the actuator. Thus, an "a priori" knowledge about the influence of the shaping, in particular the curvature, on the radiation characteristic of the flexible organic light emitting diode with existing shape information, such as mechanical measurements, for example, be used by the actuator for adjusting the shape and used for control.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1 a flexible organic light-emitting diode according to the prior art in an initial state;

2 the flexible organic light-emitting diode according to 1 in a state of curvature;

3 the flexible organic light-emitting diode according to 1 in the initial state;

4 the flexible organic light-emitting diode according to 1 in a state of curvature;

5 an embodiment of an optoelectronic assembly in an initial state;

6 the optoelectronic assembly according to 5 in a state of curvature;

7 an embodiment of an optoelectronic assembly in an initial state;

8th the optoelectronic assembly according to 7 in a state of curvature;

9 an embodiment of an optoelectronic assembly in a state of curvature;

10 a sectional view of an embodiment of an optoelectronic assembly;

11 a sectional view of an embodiment of an optoelectronic assembly;

12 a sectional view of an embodiment of an optoelectronic assembly;

13 a sectional view of an embodiment of an optoelectronic assembly;

14 a sectional view of an embodiment of an optoelectronic assembly;

15 a sectional view of an embodiment of an optoelectronic assembly;

16 a sectional view of an embodiment of an optoelectronic assembly;

17 a sectional view of an embodiment of an optoelectronic assembly;

18 a sectional view of an embodiment of an optoelectronic assembly;

19 a sectional view of an embodiment of an optoelectronic assembly;

20 a sectional view of an embodiment of an optoelectronic assembly;

21 a sectional view of an embodiment of an optoelectronic assembly;

22 a plan view of an embodiment of an optoelectronic assembly;

23 a plan view of an embodiment of an optoelectronic assembly;

24 a plan view of an embodiment of an optoelectronic assembly;

25 a plan view of an embodiment of an optoelectronic assembly;

26 a plan view of an embodiment of an optoelectronic assembly.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments may be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

An optoelectronic assembly may comprise one, two or more optoelectronic components. Optionally, an optoelectronic assembly can also have one, two or more electronic components. An electronic component may have, for example, an active and / or a passive component. An active electronic component may have, for example, a computing, control and / or regulating unit and / or a transistor. A passive electronic component may, for example, comprise a capacitor, a resistor, a diode or a coil.

An optoelectronic component can be a light-emitting component or a light-absorbing component in various exemplary embodiments. A light-absorbing component may be, for example, a photodiode, a photoconductor, an optical sensor element and / or a solar cell. A light-emitting device may be, for example, a semiconductor light-emitting device and / or a light-emitting diode, an organic light-emitting diode, a light-emitting transistor, or a transistor emitting organic light. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the light-emitting component may be formed, for example, as a light-emitting diode (LED) as an organic light-emitting diode (OLED), as a light-emitting transistor or as an organic light-emitting transistor. The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components may be provided, for example accommodated in a common housing or formed on the same carrier or in the same layer structure.

1 shows a conventional flexible organic light emitting diode 1 according to the prior art, hereinafter briefly as a conventional light-emitting diode 1 is designated, in an initial state in which an amount of curvature of the conventional light-emitting diode is zero, for example. The conventional LED 1 shines first light 3 in a solid angle range, which in 1 over the conventional light-emitting diode 1 is located, which can be referred to as the upper half-space and / or extending over a solid angle of 180 °. The illuminated solid angle range depends on a curvature of the conventional light emitting diode 1 from. The conventional LED 1 can be referred to in this context as the top emitter. Alternatively or additionally, the conventional light emitting diode 1 also emit light into a solid angle area that is in 1 below the conventional light emitting diode 1 lies and which can be referred to as a lower half-space. The conventional LED 1 may also be referred to as a bottom emitter or a top and bottom emitter in this context and / or as a transparent conventional light-emitting diode 1 be designated.

2 shows the conventional light emitting diode 1 according to 1 in a first curvature state in which the conventional light emitting diode 1 has a non-zero curvature. Due to the in 2 shown curvature changes the solid angle range in which the first light 3 is emitted. In particular, the solid angle range in which the first light is radiated increases, the first light 3 not only in the upper half-space but also in lateral half-spaces is radiated. If the conventional light emitting diode 1 continues to be driven unchanged, so the luminous flux emitted by it and the amount of light emitted by it remain constant over time. Due to the increased solid angle range, however, the light intensity and thus the brightness changes at a predetermined location in the illuminated solid angle range.

At an opposite curvature of the conventional light emitting diode 1 would the solid angle range decrease and at constant luminous flux, the light intensity would be greater. These considerations can be applied to a bottom emitter and a top and bottom emitter respectively.

3 shows the conventional light emitting diode 1 according to 1 in the initial state, wherein at least a part of the radiated first light 3 as a second light 5 back to the conventional light emitting diode 1 reflected and / or scattered.

4 shows the conventional light emitting diode 1 according to 3 in the curvature state according to 2 , Since in the state of curvature as explained above, the intensity of the output first light 3 is lower than in the initial state at the predetermined location in the illuminated solid angle range, is basically also the light intensity of the reflected and / or scattered second light 5 less than in the initial state.

5 shows an embodiment of an optoelectronic assembly 10 in an initial state. The optoelectronic assembly 10 has a flexible organic light emitting diode 7 , hereinafter referred to as light emitting diode 7 is designated, and a sensor element 9 on. The sensor element 9 is directly physical with the light emitting diode 7 coupled. That the LED 7 is flexible, for example, means that the LED 7 non-destructively bendable with a bending radius in a range for example from 1 cm to 100 cm, for example from 2 cm to 50 cm, for example from 3 cm to 10 cm.

The light-emitting diode 7 produces the first light 1 , this in 5 for reasons of clarity is not shown and that of the light emitting diode 7 is radiated to the outside, and third light 6 that internally in the light emitting diode 7 is passed, for example in a light guide and / or a transparent layer or a transparent element of the light emitting diode 7 , The third light 6 For example, due to internal total reflection in the LED 7 be directed. In 5 is the third light 6 shown as being from an outer interface of the light emitting diode 7 to another outer interface of the light emitting diode 7 reflected internally. In fact, the third light 6 However, also on internal interfaces, for example, of internal layers or internal elements of the light emitting diode 7 , are reflected, for example, totally internally reflected.

In the internal light pipe losses can occur, for example, in fourth light 8th resulting in the light guide in the light emitting diode 7 should be routed internally but exits the light pipe and either in addition to the first light 3 from the LED 8th exit or from another internal layer or other internal element of the light emitting diode 7 is absorbed. The losses and thus the amount of light of the fourth light 8th depend, for example, on the refractive index of the optical fiber and the material surrounding it, on the polarization, wavelength and dispersion of the third light 6 and the state of curvature of the light emitting diode 7 from.

The sensor element 9 is suitable for detecting a curvature value that is representative of the curvature of the light emitting diode 7 is. The sensor element 9 is for example an optical sensor element 9 , which may be formed for example as a photodiode, photoconductor or photodetector. The sensor element 9 is suitable for detecting a light intensity of the third light 6 is formed. A value of the intensity of the third light 6 may thus be the curvature value representative of the curvature of the light emitting diode 7 is. The fourth light 8th is not from the sensor element 9 detected. The sensor element 9 may also include two or more optical sensor elements, photodiodes, photoconductors or photodetectors. The detected light intensity can, for example, by means of a in 5 not shown logic unit of the optoelectronic assembly can be determined. The logic unit can with respect to the light emitting diode 7 and / or the sensor element 9 be formed externally or internally. In other words, the light emitting diode 7 and / or the sensor element 9 and the logic unit be distributed over two optoelectronic components or be integrated in an optoelectronic component. As an alternative to the light intensity, by means of the sensor element 9 for example, a luminance or a brightness can be detected. The curvature value is then corresponding to, for example, a luminance value or a brightness value.

6 shows the optoelectronic module 10 according to 5 in a state of curvature. In the curvature state, the amount of light of the third light decreases 6 from and the fourth light 8th to, as the losses in curving the light guide of the light emitting diode 7 increase. The losses thus depend on the curvature of the light guide in the light emitting diode 7 and thus of the curvature of the LED 7 from. The sensor element 9 thus captures with constant control of the light emitting diode 7 in the curvature state, a lower light intensity than in the initial state. The light intensity is representative of the curvature of the light emitting diode 7 and the optoelectronic assembly 10 ,

7 shows an embodiment of an optoelectronic assembly 10 , for example, largely a configuration of the above-explained optoelectronic assembly 10 can correspond. The sensor element 9 is on a center of the light emitting diode 7 arranged.

8th shows the optoelectronic module 10 according to 7 in a state of curvature. The sensor element 9 is arranged so that it is not or at least approximately not moved despite the curvature. This can contribute to a measurement signal of the sensor element 9 not due to movement of the sensor element 9 is falsified. In this embodiment and in the curvature shown, the center of the light emitting diode 7 the appropriate position for the sensor element in this context 9 , However, in another embodiment or other expected curvature, another position may be more appropriate for the sensor element to become 9 despite the curvature not or at least approximately not moved.

9 shows an embodiment of an optoelectronic assembly 10 , for example, largely a configuration of the above-explained optoelectronic assembly 10 may correspond, in a state of curvature. The sensor element 9 is so physical with the light emitting diode 7 coupled that the sensor element 9 can detect the curvature. In particular, the sensor element 9 detect a curvature value that is representative of the curvature. The sensor element 9 For example, it can be a strain gauge. The strain gauge may deviate from 9 completely on the light emitting diode 7 be attached, for example, be glued to this area. The sensor element 9 may also have two or more strain gauges. The curvature value may be, for example, an electrical resistance of the strain gauge. The electrical resistance can be determined, for example, by means of a logic unit, not shown.

10 shows a sectional view of an embodiment of an optoelectronic assembly 10 , for example, largely a configuration of the above-explained optoelectronic assembly 10 can correspond. The optoelectronic assembly 10 indicates the LED 7 and the sensor element 9 on. The light-emitting diode 7 and the sensor element 9 are monolithic in an optoelectronic component and the one optoelectronic assembly 10 integrated and / or formed by the same layer structure. The light-emitting diode 7 and the sensor element 9 can be formed parallel to each other in the same manufacturing process.

The sensor element 9 may be formed as a light-absorbing component, for example in the form of a photodetector, a photodiode, a solar cell, a photoconductor or a non-energized light emitting diode. If the sensor element 9 is designed as a de-energized LED and is operated as a light emitting diode in inverse operation, the sensor element 9 have a substantially same layer cross section as the light emitting diode 7 , The light-emitting diode 7 and the sensor element 9 each have an optically active region. The light-emitting diode 7 can be designed as a top and / or bottom emitter. A top and bottom emitter can also be referred to as an optically transparent or translucent component, for example as a transparent or translucent light-emitting diode.

The light-emitting diode 7 and the sensor element 9 are on or above a common carrier 12 educated. The carrier 12 is mechanically flexible and as optical fiber of the third light 6 formed, wherein the third light 6 that is internally in the optoelectronic module 10 directed light, in the carrier 12 also as the fifth light 6A can be designated. That the carrier 12 mechanically flexible, means, for example, that the carrier 12 non-destructively bendable with a bending radius in a range for example from 1 cm to 100 cm, for example from 2 cm to 50 cm, for example from 3 cm to 10 cm.

The carrier 12 For example, it may be transparent or translucent with respect to the fifth light 6A be educated. The carrier 12 For example, it can serve as a support element for electronic elements or layers, for example light-emitting elements. For example, the carrier 12 Glass, quartz, and / or have a semiconductor material or be formed therefrom. Furthermore, can the carrier 12 comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The carrier 12 may comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel. The carrier 12 may be formed as a metal foil or a metal-coated foil. The carrier 12 can be translucent or transparent. The metal may for example be formed as a thin transparent or translucent layer and / or be part of a mirror structure. The mechanically flexible carrier 12 For example, it may be formed as a film, for example as a plastic film, metal foil or a thin glass.

Optionally, on the carrier 12 a barrier layer, not shown, may be formed, which may comprise or consist of one or more of the following materials: alumina, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, polyp (p-phenylene terephthalamide), nylon 66, SiNCBO _x and mixtures and alloys and / or in any composition thereof. The barrier layer may be formed by atomic layer deposition (ALD), CVD, sputtering and / or molecular layer deposition (MLD). The barrier layer may have two or more identical and / or different layers, or layers, for example next to one another and / or one above the other, for example as a barrier layer structure or a barrier stack, for example structured. Furthermore, the barrier layer may have a layer thickness in a range from 0.1 nm (one atomic layer) to 5000 nm, for example a layer thickness in a range from 10 nm to 200 nm, for example a layer thickness of approximately 40 nm.

The light-emitting diode 7 further has a first electrode 14 on top of or above the vehicle 12 and / or in the form of a first electrode layer. Next to the first electrode 14 is on one side on or above the vehicle 12 an electrical first connection 16 educated. The first connection 16 can also be referred to as the first contact pad. Next to the first electrode 14 is on the other side on or above the wearer 12 an electrical second connection 18 educated. The second connection 18 can also be referred to as a second contact pad. The first electrode 14 is with the second connection 18 physically and electrically connected. On or above the first electrode 14 is an organic functional layered structure 24 educated. The area of the LED 7 with the organic functional layer structure 24 on or above the vehicle 12 can as an optically active region of the LED 7 be designated. The second connection 18 is in the geometric edge region of the optically active region of the light-emitting diode 7 on or above the vehicle 12 formed, for example, laterally adjacent to the first electrode 14 ,

Over or on the organic functional layer structure 24 is a second electrode 26 educated. The second electrode 26 is by means of a first electrical insulation 20 from the first electrode 14 electrically isolated. The second electrode 26 is with the first connection 16 physically and electrically connected. The second connection 18 is by means of another first electrical insulation 22 electrically from the second electrode 26 isolated. On or above the vehicle 12 may be part of the electrically active region of the light emitting diode 7 be arranged. The electrically active region may be considered the region of the light emitting diode 7 be understood, in which an electric current for operation of the light emitting diode 7 flows. The electrically active region can be, for example, the first electrode 14 , the second electrode 26 , the connections 16 . 18 and / or the organic functional layer structure 24 exhibit.

The first electrode 14 optionally on or over the barrier layer or, if the barrier layer is absent, on or above the support 12 be applied, for example in the form of a first electrode layer. The first electrode 14 may be formed of an electrically conductive material, such as a metal or a conductive transparent oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as ZnO, SnO2, or In2O3, ternary metal oxygen compounds such as AlZnO, Zn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GalnO3, Zn2In2O5 or In4Sn3O12 or mixtures of different transparent conductive oxides also belong to the group of TCOs and can be used in various embodiments be used.

The first electrode 14 may comprise a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Cr, Mo, Ca, Sm or Li, and compounds, combinations or alloys of these metals, for example, a thin metal layer. The first electrode 14 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode 14 may comprise one or more of the following materials as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires. Furthermore, the first electrode 14 having electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

The first electrode 14 and the carrier 12 can be translucent or transparent. The first electrode 14 may have a layer thickness in a range, for example, from 1 nm to 500 nm, for example from 25 nm to 250 nm, for example from 50 nm to 100 nm.

The first electrode 14 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode. At the first connection 16 is a first electrical potential, which can be provided by a power source, not shown, for example, a power source or a voltage source, applied. Alternatively, the first electrical potential to the carrier 12 and indirectly to the first electrode 14 be created. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

The organic functional layer structure 24 may comprise one or more emitter layers (not shown), for example with fluorescent and / or phosphorescent emitters, and one or more hole line layers (also referred to as hole transport layer (s)) (not shown). In various embodiments, alternatively or additionally, one or more electron conduction layers (also referred to as electron transport layer (s)) (not shown) may be provided.

Examples of emitter materials that can be used for the emitter layer (s) include organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (eg, 2- or 2,5-substituted poly-p-phenylenevinylene) as well as metal complexes For example, iridium complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) 3 (tris (2-phenylpyridine) ) iridium III), red phosphorescent Ru (dtb-bpy) 3x2 (PF6) (tris [4,4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4,4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-ylolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters are, for example, depositable by means of thermal evaporation, an atomic layer deposition method and / or a molecule layer deposition method. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating). The emitter materials may be suitably embedded in a matrix material.

The emitter materials of the emitter layer (s) may for example be selected so that the light emitting diode 7 White light emitted. The emitter layer (s) may comprise a plurality of emitter materials emitting different colors (for example blue and yellow or blue, green and red), alternatively the emitter layer (s) may also be composed of several sublayers, such as a blue fluorescent emitter layer or blue phosphorescent emitter layer, a green phosphorescent emitter layer and a red phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.

The organic functional layer structure 24 may generally comprise one or more electroluminescent layers. The electroluminescent layer may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules"), or a combination of these materials. For example, the organic functional layer structure 24 an electroluminescent layer which is designed as a hole transport layer, so that an effective hole injection into an electroluminescent region is made possible. Alternatively, the organic functional layer structure 24 a functional layer which is designed as an electron transport layer, so that an effective electron injection into an electroluminescent region is made possible. As a material for the hole transport layer, for example, tertiary amines, Carbazoderivate, conductive polyaniline or Polythylendioxythiophen can be used.

The hole transport layer may be on or above the first electrode 14 formed, for example, be deposited, and the emitter layer may be formed on or above the hole transport layer, for example, deposited, be. The electron transport layer may be formed on or over the emitter layer, for example deposited.

The organic functional layer structure 24 may have a layer thickness in a range for example of 300 nm to 3 .mu.m, for example from 500 nm to 2 .mu.m, for example from 800 nm to 1 .mu.m.

The light-emitting diode 7 Optionally, it may have further functional layer structures, for example arranged on or above the emitter layer or on or above the electron transport layer, which serve the functionality and thus the efficiency of the light emitting diode 7 continue to improve. The further functional layer structures may, for example, be separated from one another by means of a charge-generating pair (CGL) layer structure.

On or above the organic functional layer structure 24 or optionally on or above the further functional layer structure, the second electrode 26 , for example in the form of a second electrode layer 26 be upset. The second electrode 26 may comprise or be formed from the same materials as different embodiments of the first electrode 14 , The second electrode 26 may have a layer thickness in a range, for example, from 10 nm to 200 nm, for example from 25 nm to 100 nm, for example from 30 nm to 50 nm. The second electrode 26 may generally be formed in a similar manner as a configuration of the first electrode 14 , In various embodiments, the first electrode 14 and the second electrode 26 both translucent or transparent. The second electrode 26 may be formed as an anode or as a cathode.

The second electrode 26 is with the second electrical connection 18 coupled to which a second electrical potential, which is different from the first electrical potential and which can be provided by the energy source, can be applied. The second electrical potential may, for example, have a value such that the difference to the first electrical potential has a value in a range, for example, of 1.5 V to 20 V, for example 2.5 V to 15 V, for example 3 V to 12 V.

The connections 16 . 18 For example, a material or mixture of materials similar to a configuration of the first electrode 14 and / or the second electrode 26 or formed therefrom, for example a metal layer structure having at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr), chromium-aluminum-molybdenum (Cr-Al-Mo), chromium Aluminum-nickel (Cr-Al-Ni), chromium-aluminum-niobium (Cr-Al-Nb) or molybdenum-aluminum-molybdenum (Mo-Al-Mo), silver-magnesium (Ag-Mg), aluminum. The contact pads 16 . 18 For example, they may include a contact pad, a pin, a flexible printed circuit board, a clip, a clip, or other electrical connection means. The connections 16 . 18 may be optically transparent, translucent or opaque.

The electrical insulations 20 . 22 may be arranged such that a direct current flow between two electrically conductive regions, for example between the first electrode 14 and the second electrode 26 is prevented. The material of the electrical insulation may be, for example, a coating or a coating agent, for example a polymer and / or a lacquer. The lacquer may, for example, have a coating material which can be applied in liquid or in powder form, for example a polyimide, or be formed therefrom. The electrical insulations 20 . 22 For example, they may be applied or formed lithographically or by means of a printing process, for example structured. The printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing (pad printing).

On or above the second electrode 26 can be an encapsulation layer 28 be arranged such that the second electrode 26 , the electrical insulations 20 . 22 and the organic functional layer structure 24 from the encapsulation layer 28 are surrounded, ie from the encapsulation layer 28 in connection with the carrier 12 are included. Under the encapsulation layer 28 , which may for example be formed by a barrier thin film, may in the context of this description be understood, for example, as a layer or layer structure suitable for providing a barrier to chemical contaminants and / or atmospheric agents, in particular to water (moisture) and oxygen , to build. In other words, the encapsulation layer 28 designed so that they are not affected by OLED damaging substances such as water, oxygen or solvents can not or at most be penetrated to very small proportions.

The encapsulation layer 28 may be formed as a single layer, for example as a single layer. Alternatively, the encapsulation layer 28 have a plurality of sub-layers formed on each other. In other words, the encapsulation layer 28 be formed as a layer stack (stack). The encapsulation layer 28 or one or more sub-layers of the encapsulation layer 28 can be formed, for example, by means of a suitable deposition process, for. Example by means of a Molekugelagenabscheideverfahrens (MLD), an atomic layer deposition method (ALD), z. A plasma-enhanced atomic layer deposition process (PEALD) or a plasma-less atomic layer deposition process (PLALD), or by means of a chemical vapor deposition (CVD) method, e.g. A plasma-enhanced vapor deposition (PECVD) process or a plasma-less chemical vapor deposition (PLCVD) process. By using an atomic layer deposition (ALD) and / or a molecular layer deposition (MLD) process, very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region. For an encapsulation layer 28 having multiple sublayers, all sublayers may be formed by means of an atomic layer deposition process and / or a molecular layer deposition (MLD) process. A layer sequence comprising only ALD layers and / or MLD layers can also be referred to as "nanolaminate".

The encapsulation layer 28 According to one embodiment, it may have a layer thickness of 0.1 nm (one atomic layer) to 1000 nm, for example from 10 nm to 100 nm, for example approximately 40 nm.

Furthermore, in various embodiments, an encapsulation layer may be used 28 be dispensed with and it may, for example, only a cover, for example, a Kavitätsglasverkapselung or a metallic encapsulation, be formed.

The encapsulation layer 28 can be designed as a translucent or transparent layer. The encapsulation layer 28 may include or be formed from any of the following materials: alumina, zinc oxide, zirconia, titania, hafnia, tantalum lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, SiNCOB, and mixtures and alloys thereof. The encapsulation layer 28 may comprise a high refractive index material, in other words a material having a high refractive index, for example having a refractive index of 2 or more.

On or above the encapsulation layer 28 and / or on or over the electrically active region may be an adhesive layer 30 be arranged such that the adhesive layer 30 the encapsulation layer 28 or the electrically active region areally and hermetically seals with respect to harmful environmental influences and / or the diffusion rate of water and / or oxygen to the encapsulation layer 28 reduced. The adhesive layer 30 can be translucent and / or transparent. The adhesive layer 30 may have a layer thickness in a range for example from 0.1 .mu.m to 10 .mu.m, for example from 1 .mu.m to 5 .mu.m. The adhesive layer 30 may include or be a lamination adhesive.

In the adhesive layer 30 For example, light-scattering particles can be embedded, which can lead to a further improvement of the color angle distortion and the coupling-out efficiency. The light-scattering particles may be, for example, scattering dielectric particles and, for example, metal oxides such as. Example, silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga 2 O x) alumina, or titanium oxide. Alternatively or additionally, the particles have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, such as, for example, acrylate particles or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver or iron nanoparticles can be provided as light-scattering particles or air bubbles for light scattering.

In various embodiments, the adhesive layer 30 have a refractive index that is less than the refractive index of the cover 36 , The adhesive layer 30 For example, it may comprise a low refractive index adhesive, for example an acrylate having a refractive index of about 1.3. Alternatively, the adhesive layer 30 For example, have a high refractive index adhesive having, for example, high refractive index, non-diffusing particles and having a mean refractive index, which corresponds approximately to the average refractive index of the organic functional layer structure, for example in a range of about 1.7 to about 2.0 or greater. Furthermore, several different adhesives in the adhesive layer 30 be provided, which form an adhesive layer sequence.

In various embodiments, between the second electrode 26 and the adhesive layer 30 an electrically insulating layer (not shown) may be applied, for example SiN, SiOx, SiNOx, for example with a layer thickness in a range from about 300 nm to about 1.5 μm, for example with a layer thickness in a range from about 500 nm to about 1 μm, for example to protect electrically unstable substances, for example during a wet-chemical process. Furthermore, the electrically insulating layer can also serve as encapsulation layer, whereby a robustness of the optoelectronic assembly 10 can be increased, in particular protection against penetration of particles can be increased.

On or above the adhesive layer 30 is a cover 36 arranged. The cover 36 for example, on the encapsulation layer 28 by means of the adhesive layer 30 be glued, for example, be laminated. The cover 36 may, for example, glass, metal and / or plastic. The cover 36 For example, it can be structured, for example as a cavity glass. The encapsulation layer 28 and / or the cover 36 may be designed such that the enclosed layers are hermetically sealed with respect to harmful environmental influences, for example with regard to water and / or oxygen.

In 10 under the carrier 12 Optionally a decoupling layer 58 be arranged, for example, on the side of the organic functional layer structure 24 turned away. The decoupling layer 58 can, for example, as an external Auskoppelschicht 58 , For example, as Auskoppelfolie on the carrier 12 be educated. The decoupling layer 58 may comprise a matrix and scattering centers distributed therein, wherein the average refractive index of the coupling-out layer 58 is greater than the average refractive index of the layer that emits the light.

On or above the electrically active region and / or on or above the optically active region and / or on or above the optically inactive region, a getter layer (not shown) may be arranged. The getter layer can hermetically seal the electrically active region with respect to harmful environmental influences. The getter layer may, for example, the diffusion rate of water and / or oxygen towards the encapsulation layer 28 and / or reduce the electrically active area. The getter layer may be from the adhesive layer 30 surrounded and / or encapsulated by the adhesive layer. The getter layer may comprise a matrix and distributed therein a getter. The getter layer can be translucent, transparent or opaque. The getter layer may have a layer thickness in a range, for example, from 0.1 μm to 10 μm, for example from 1 μm to 5 μm. In various embodiments, the matrix of the getter layer may include a lamination adhesive and / or may be dispensed in a dispensing process ("dispensable getter").

The getter layer may have a refractive index that is less than the refractive index of the cover 36 , Such a getter layer may comprise, for example, a low refractive index adhesive, for example an acrylate having a refractive index of about 1.3. Alternatively, the getter layer may comprise, for example, a high refractive index adhesive having, for example, high refractive index non-diffusing particles and / or a mean refractive index. The average refractive index may, for example, approximately correspond to the average refractive index of the organically functional layer structure and / or be in the range, for example, from 1.7 to 2.0. Furthermore, several different adhesives may be provided in the getter layer, which form an adhesive layer sequence.

In the getter layer, light-scattering particles can be embedded, which can lead to a further improvement of the color angle distortion and the coupling-out efficiency. The light-diffusing particles may, for example, according to one in the preceding embodiment of the light-scattering particles in the adhesive layer 30 be educated.

Between the second electrode 26 and the getter layer may be formed an electrically insulating layer (not shown) having, for example, SiN, for example, a layer thickness in a range of 300 nm to 1.5 μm, for example, 500 nm to 1 μm, for example, electrically unstable Protect substances, for example, during a wet chemical process.

On or above the adhesive layer 30 and optionally on or above the getter layer is a cover 36 arranged. The cover 36 has, for example, glass, a metal foil and / or a sealed plastic film. The cover 36 can, for example, by means of the adhesive layer 30 on or over the encapsulation layer 28 be glued, for example, be laminated. The cover 36 For example, it can be applied by means of a frit bonding / glass soldering / seal glass bonding using a conventional glass solder. In various embodiments, the cover may / may 36 and / or the adhesive 124 have a refractive index (for example at a wavelength of 633 nm) of 1.55.

In addition to the LED 7 is the sensor element 9 educated. The sensor element 9 may have an optically active region. The light-emitting diode 7 is from the sensor element 9 electrically isolated. In various embodiments, the light emitting diode 7 and the sensor element 9 be optically coupled with an optical fiber. The sensor element 9 may be formed as inversely operated organic light emitting diode, for example, similar to an embodiment of the light emitting diode 7 ,

The sensor element 9 has a third electrode 44 on top of or above the vehicle 12 is trained. On or above the third electrode 44 is an organically functional layered structure 54 of the sensor element 9 educated. The organic functional layer structure 54 of the sensor element 9 can according to one of the above-explained embodiments of the organic functional layer structure 24 the LED 7 be educated. In particular, the organic functional layer structure 54 of the sensor element 9 a hole transport layer, an electron transport layer, a charge carrier pair generation layer structure (charge generating layer), a hole injection layer and / or an electron injection layer as described above.

On one of the light emitting diode 7 facing side of the third electrode 44 is an electrical third connection 46 educated. The third connection 46 can also be referred to as the third contact pad. The third connection 48 can in a geometric edge region of the optically active region of the sensor element 9 on or above the vehicle 12 be formed, for example, laterally adjacent to the third electrode 44 , On one of the light emitting diode 7 opposite side of the third electrode 44 is an electrical fourth connection 48 educated. The fourth connection 48 can also be referred to as the fourth contact pad. The fourth connection 48 can in a geometric edge region of the optically active region of the sensor element 9 on or above the vehicle 12 be formed, for example, laterally adjacent to the third electrode 44 , The third electrode 44 can with the fourth connection 48 be physically and electrically connected.

On or above the third electrode 44 is the organic functional layer structure 56 of the sensor element 9 educated. Over or on the organic functional layer structure 54 of the sensor element 9 is a fourth electrode 56 educated. The fourth electrode 56 is by means of a second electrical insulation 50 from the third electrode 44 electrically isolated. The fourth connection 48 is by means of another second electrical insulation 52 from the fourth electrode 56 electrically isolated. The fourth electrode 56 is with the third connection 46 physically and electrically coupled. The light-emitting diode 7 is from the sensor element 9 electrically isolated, for example, the third port 46 by means of an electrical intermediate insulation 53 electrically from the second terminal 18 be isolated.

On or above the fourth electrode 56 is the encapsulation layer 28 so arranged that the fourth electrode 56 , the second electrical insulation 50 . 52 and the organic functional layer structure 54 of the sensor element 9 from the encapsulation layer 28 are surrounded, ie from the encapsulation layer 28 in connection with the carrier 12 are included. The encapsulation layer 28 can hermetically seal the enclosed layers with respect to harmful environmental influences.

The sensor element 9 can be an area that the wearer 12 in a range of 0.5 mm ² to 250 mm ² .

The light-emitting diode 7 can couple light into the optical waveguide and / or the sensor element 9 can pick up light from the fiber optic cable. The optical fiber may be from the carrier 12 be formed. For example, the fifth light 6A over the carrier of the light emitting diode 7 to the sensor element 9 be directed. Alternatively or additionally, from the cover 36 and / or from the encapsulation layer 28 be formed of the optical waveguide. For example, then sixth light 6B that is at least part of the third light 6 forms over the cover 36 or the encapsulation layer 28 towards the sensor element 9 be directed. In various embodiments, the light emitting diode 7 and / or the sensor element 9 be optically connected by means of an optical coupling structure with the optical waveguide, for example, the barrier layer, the encapsulation layer 28 and / or the adhesive layer 30 ,

The sensor element 9 can be the third, fifth and sixth light 6 . 6A . 6B , Record and dependent on an electrical voltage across the third and fourth electrode 44 . 56 produce. This can be used as the output signal of the sensor element 9 to an in 10 not shown logical unit to be transmitted. In addition, the sensor element 9 the second light 5 , in particular upper second light 5A and lower second light 5B , Record and dependent on the voltage generate and / or output the output signal.

Depending on whether only a part of the basically detectable light is actually to be detected and / or whether the light-emitting diode 7 is designed as a top and / or bottom emitter, the sensor element 9 be shadowed by one or more shadow elements with respect to the other parts of the detectable light. For example, can the sensor element 9 opposite the second, third, fifth, sixth, upper second and / or lower second light 5 . 6 . 6A . 6B . 5A . 5B be shadowed. For example, the organic functional layer structure 54 of the sensor element 9 in front of the upper second light 5B be protected by the fourth electrode 56 , the encapsulation layer 28 , the adhesive layer 30 and / or the cover 36 have a low transmissivity and / or opaque or opal formed and / or by a mirror structure, the organic functional layer structure 54 of the sensor element 9 at least partially surrounds. Alternatively or additionally, the organic functional layer structure 54 of the sensor element 9 in front of the lower second light 5A and / or before the fifth light 6A be protected by the wearer 12 has a low transmissivity and / or is opaque or opal. Alternatively or additionally, the organic functional layer structure 54 of the sensor element 9 before the sixth light 6B be protected by the encapsulation layer 28 has a low transmissivity and / or is opaque or opal.

When manufacturing the optoelectronic assembly 10 can be the first and the third electrode 14 . 44 be made in the same step. Alternatively or additionally, the connections 16 . 18 . 46 . 48 be made at least partially in the same step. Alternatively or additionally, the organic functional layer structures 26 . 56 be made in the same step. Alternatively or additionally, the second and the fourth electrode 26 . 56 be made in the same step. Alternatively or additionally, the insulator layers 20 . 22 . 50 . 52 be made in the same step.

11 shows an embodiment of the optoelectronic assembly 10 , for example, according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The sensor element 9 can shadow the lower second light 5A with a shadow element 60 be covered in 11 on a bottom of the vehicle 12 on the carrier 12 is arranged. The shadow element 60 may for example be formed by an opaque layer, for example an insulator layer, a metal layer, a barrier thin layer and / or a glass cover. The light of the LED 7 is about the carrier 12 as an optical waveguide in the optically active region of the sensor element 9 coupled. The carrier 12 acts as an optical waveguide and should be at least partially transmissive. Alternatively or additionally, the encapsulation layer 28 and / or the cover body 36 be designed as an optical waveguide.

12 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The sensor element 9 is formed as a photoconductor. The sensor element 9 may include or be formed from a material whose electrical resistance and / or electrical conductivity changes with the luminosity of the incident electromagnetic radiation. The electrical resistance or the electrical conductivity can, for example, by means of in 12 Logic unit not shown are determined.

The shadow element 60 is in 12 dashed lines, which means that the shadow element 60 is optionally arranged.

13 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. When manufacturing the optoelectronic assembly 10 may be a distance A between the light emitting diode 7 and the sensor element 9 can be varied, whereby, for example, the internal line of the third light influenced, for example, amplified at a smaller distance A or decreases at a greater distance A, can be.

14 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The decoupling layer 16 is between the carrier 12 and the first electrode 14 educated.

15 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The organic functional layer structures 24 . 54 are only partially from the second electrode 26 or fourth electrode 56 covered. In particular, the organic functional layer structures 24 . 54 in 15 in an upper left edge region not from the second electrode 26 or fourth electrode 56 covered. Alternatively or additionally, the fourth electrode 56 the organic functional layer structure 54 of the sensor element 9 towards the organic functional layer structure 24 the LED 7 do not cover, which can contribute to a particularly large proportion of the sixth light 6B over the encapsulation layer 28 towards the optically active region of the sensor element 9 arrive and can be recorded there. Alternatively or additionally, the second electrode 26 or fourth electrode 56 Have recesses, for example, circular or polygonal, within which the organic functional layer structures 24 . 54 not from the second electrode 26 or fourth electrode 56 are covered.

16 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The encapsulation layer 28 , the adhesive layer 30 and the cover 36 are with respect to the light emitting diode 7 and the sensor element 9 formed separately from each other. The encapsulation layer 28 , the adhesive layer 30 and the cover 36 the LED 7 and the sensor element 9 may first be formed together and / or in one piece and then separated from each other or formed separately from each other.

17 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The decoupling layer 58 extends over the entire carrier 12 , for example via one of the organic functional layer structure 24 opposite side of the carrier 12 , in 17 over the entire underside of the carrier 12 ,

18 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The decoupling layer 58 extends over the entire carrier 12 , for example via one of the organic functional layer structure 24 facing side of the carrier 12 , in 18 over the entire top of the carrier 12 ,

19 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The optoelectronic assembly 10 points to the carrier 12 which is not transparent, a conductor layer 62 on, acting as an optical waveguide for guiding the fourth light 6A is trained.

20 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The optoelectronic assembly 10 has a logic unit 70 on. The optoelectronic assembly 10 has a first output port 72 and an input terminal 74 on. The first and the second connection 16 . 18 are via a first electrical line 76 or a second electrical line 78 with the first output terminal 72 electrically coupled. The third and the fourth connection 46 . 48 are via a third electrical line 80 or a fourth electrical line 82 with the input connector 74 electrically coupled.

The logic unit 70 is electrically coupled to a power source, not shown, such as a power source or a voltage source. Furthermore, the logic unit for exchanging data can be coupled to a computing unit. The logic unit 70 may comprise a driver circuit, a control unit and / or a control unit. The logic unit is set up to the light emitting diode 7 to provide energy and an output signal, such as a voltage, of the sensor element 9 capture. The logic unit 70 can depending on the detected output signal a curvature state of the optoelectronic assembly 10 determine. Depending on the curvature state, the logic unit may perform a predetermined action.

The predefined action can be, for example, driving the light-emitting diode 7 include. The driving of the light emitting diode 7 For example, in the course of a readjustment, the luminous intensity and / or brightness generated by the light-emitting diode in a given solid angle range may remain constant or at least approximately constant. Alternatively, the driving of the light emitting diode 7 done so that the light emitting diode 7 itself can be used as a warning indicator to warn against excessive bending of the optoelectronic assembly. For example, the light emitting diode 7 can be turned off, the generated light intensity can be changed significantly or the light emitting diode 7 can be switched to a flashing mode.

Alternatively or additionally, the sensor element 9 operated inversely and used as a visual warning display.

For the sake of clarity, was in 20 to clarify the electrical couplings of the logic unit 70 with the LED 7 and the sensor element 9 the embodiment of the optoelectronic assembly 10 chosen, in which the encapsulation 28 , the adhesive layer 30 and the cover 36 each formed in several pieces and / or not contiguous. The logic unit 70 and the corresponding electrical couplings, however, can readily in one of the embodiments of the optoelectronic assembly 10 be arranged, in which the encapsulation layer 28 , the adhesive layer 30 and the cover 36 each formed in one piece.

21 shows an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. In addition to the LED 7 is on one of the sensor element 9 remote side of the LED 7 a display element 79 educated. The display element 79 may have an optically active region. The light-emitting diode 7 is from the display element 79 electrically isolated. The display element 79 can be designed as an organic light emitting diode, for example, similar or identical to an embodiment of the light emitting diode 7 and / or without comparing an optoelectronic assembly 10 with only one LED 7 without sensor element 9 Additional costs arise.

The display element 79 has a fifth electrode 81 on top of or above the vehicle 12 is trained. On or above the fifth electrode 81 is an organic functional layered structure 84 of the display element 79 educated. The organic functional layer structure 84 of the display element 79 can according to one of the above-explained embodiments of the organic functional layer structure 24 the LED 7 be educated. In particular, the organic functional layer structure 84 of the display element 79 a hole transport layer, an electron transport layer, a charge carrier pair generation layer structure (charge generating layer), a hole injection layer and / or an electron injection layer as described above.

On one of the light emitting diode 7 opposite side of the fifth electrode 81 is a fifth electric connection 85 educated. The electric fifth connection 85 can also be referred to as the fifth contact pad. The fifth connection 85 can in a geometric edge region of the optically active region of the display element 79 on or above the vehicle 12 be formed, for example, laterally adjacent to the fifth electrode 81 , On one of the light emitting diode 7 facing side of the fifth electrode 81 is a sixth electrical connection 83 educated. The sixth connection 83 can also be referred to as the sixth contact pad. The sixth connection 83 can in a geometric edge region of the optically active region of the display element 79 on or above the vehicle 12 be formed, for example, laterally adjacent to the fifth electrode 81 , The fifth electrode 81 can with the sixth connection 83 be physically and electrically connected.

On or above the fifth electrode 81 is the organic functional layer structure 56 of the display element 79 educated. Over or on the organic functional layer structure 84 of the display element 79 is a sixth electrode 86 educated. The sixth electrode 86 is by means of a third electrical insulation 80 from the fifth electrode 81 electrically isolated. The sixth connection 83 is by means of another third electrical insulation 82 from the sixth electrode 86 electrically isolated. The sixth electrode 86 is with the fifth port 85 physically and electrically coupled. The light-emitting diode 7 is from the display element 79 electrically isolated, for example, the fifth port 85 by means of a further electrical intermediate insulation, not shown, electrically from the first terminal 16 be isolated.

On or above the sixth electrode 86 is the encapsulation layer 28 so arranged that the sixth electrode 86 , the third electrical insulation 80 . 82 and the organic functional layer structure 84 of the display element 79 from the encapsulation layer 28 are surrounded, ie from the encapsulation layer 28 in connection with the carrier 12 are included. The encapsulation layer 28 can hermetically seal the enclosed layers with respect to harmful environmental influences.

The display element 79 can be an area that the wearer 12 in a range of 0.5 mm ² to 250 mm ² .

When manufacturing the optoelectronic assembly 10 can be the first and the fifth electrode 14 . 81 be made in the same step. Alternatively or additionally, the connections 16 . 18 . 83 . 85 be made at least partially in the same step. Alternatively or additionally, the organic functional layer structures 24 . 84 be made in the same step. Alternatively or additionally, the second and the sixth electrode 26 . 86 be made in the same step. Alternatively or additionally, the insulator layers 20 . 22 . 80 . 82 be made in the same step.

The fifth connection 85 and the sixth connection 83 are over a fifth electrical line 97 or a sixth electrical line 98 with a second output terminal 99 the logic unit 70 electrically coupled. The display element 79 can with the help of the logic unit 70 be driven, for example, to output an optical warning signal in response to a corresponding output signal of the logic unit 70 , The display element 79 can be used for example warn against reaching or exceeding the critical curvature state.

For the sake of clarity, was in 20 to clarify the electrical couplings of the logic unit 70 with the LED 7 and the display element 79 the embodiment of the optoelectronic assembly 10 chosen, in which the encapsulation layer 28 , the adhesive layer 30 and the cover 36 each formed in several pieces. The logic unit 70 and the corresponding electrical couplings, however, can readily be found in one embodiment of the optoelectronic assembly 10 be arranged, in which the encapsulation layer 28 , the adhesive layer 30 and the cover 36 each formed in one piece.

22 shows a plan view of an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The optoelectronic assembly 10 indicates the LED 7 on. Also, in 22 several areas 100 located. Each one of the areas 10 may be representative of a sensor element 9 , for example, according to an embodiment of the above-explained sensor element 9 may be formed, or for a display element 79 , for example, according to an embodiment of the above-explained display element 79 can be trained. It can be at the positions of all areas 100 or only at the locations of isolated or grouped areas 100 one sensor element each 9 or one display element each 79 be arranged and / or trained. In particular, the sensor elements 9 and / or the display elements 79 in edge regions, corner regions and / or central regions of the optoelectronic assembly 10 be arranged and / or trained.

Each display element 79 can first light 3 on a first side of the optoelectronic assembly 10 , For example, in the upper half-space, and / or on a second side of the optoelectronic assembly 10 , for example, in the lower half-space, emit. Each sensor element 9 can light, for example upper second light 5B , from the first side of the optoelectronic assembly 10 , for example, from the upper half space, and / or light, for example, lower second light 5A , from the second side of the optoelectronic assembly 10 , for example, from the lower half space, and / or internal third, fourth and / or fifth light 6 . 6A . 6B to capture.

23 shows a plan view of an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The optoelectronic assembly 10 has more than one light emitting diode 7 , in particular four LEDs 7 , on. Also, in 23 the areas explained above 100 representative of display elements 79 or sensor elements 9 located. A few of the areas 100 are in outer corners optoelectronic assembly 10 arranged. A few of the areas 100 are central in the optoelectronic assembly 10 arranged, for example, the LEDs 7 overlapping or the LEDs 7 not overlapping.

24 shows a plan view of an embodiment of an optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The optoelectronic assembly 10 indicates the LED 7 on. Also, in 24 the areas explained above 100 representative of display elements 79 or sensor elements 9 located. An area 100 is in an outer corner optoelectronic assembly 10 arranged. An area 100 is central in optoelectronic assembly 10 arranged, for example, the light emitting diode 7 overlapping or the light emitting diode 7 not overlapping. One of the areas 100 extends over the entire width of the optoelectronic assembly 10 , One of the areas 100 extends over the entire length of the optoelectronic assembly 10 ,

25 and 26 show further plan views of embodiments of the optoelectronic assembly 10 For example, the largely according to an embodiment of the above-explained optoelectronic assembly 10 can be trained. The optoelectronic assemblies 10 have at least one of the LEDs 7 on. In addition, in the 25 and 26 the areas explained above 100 representative of display elements 79 or sensor elements 9 located. The optoelectronic assembly 10 , the light-emitting diodes 7 and the areas 100 are circular. Alternatively, the optoelectronic assembly 10 , the light-emitting diodes 7 and / or the areas 100 be formed polygonal. Furthermore, the areas 100 be formed round in the previously explained embodiments.

The invention is not limited to the specified embodiments. For example, the embodiments may be combined. For example, in the 5 to 9 illustrated principles on in the 10 to 26 shown optoelectronic assemblies 10 be transmitted. Furthermore, in the 5 to 21 shown sectional views in conjunction with the in the 22 to 26 combined top views are combined.

Claims (17)

Optoelectronic assembly ( 10 ) with - a flexible organic light emitting diode ( 7 ) for generating and emitting light, - a sensor element ( 9 ), which is directly physically connected to the organic light-emitting diode ( 7 ) and which is arranged and arranged such that it detects a curvature value representative of a curvature of the flexible organic light-emitting diode ( 7 ). Optoelectronic assembly ( 10 ) according to claim 1, comprising a logic unit adapted to perform a predetermined action depending on the curvature value. Optoelectronic assembly ( 10 ) according to claim 2, wherein the organic light emitting diode ( 7 ) and the sensor element ( 9 ) a common carrier ( 12 ) exhibit. Optoelectronic assembly ( 10 ) according to one of the preceding claims, in which the sensor element ( 9 ) is designed and arranged such that, for detecting the value of curvature, at least part of the light emitted by the organic light-emitting diode ( 7 detected light, wherein the detected light representative of the curvature of the flexible organic light emitting diode ( 7 ). Optoelectronic assembly ( 10 ) according to one of claims 3 or 4, which is a display element ( 79 ) having the common carrier. Optoelectronic assembly ( 10 ) according to one of claims 3 to 5, in which an optically sensitive region of the sensor element ( 9 ) and / or an optically active region of the display element ( 79 ) has at least one organic functional layer. Optoelectronic assembly ( 10 ) according to any one of the preceding claims, comprising a shadow element for shading light associated with the sensor element (10). 9 ) forms an overlap area. Optoelectronic assembly ( 10 ) according to one of claims 3 to 7, which has an internal light guide optically connected to the organic light emitting diode ( 7 ) and the sensor element ( 9 ) is coupled so that the internal light guide at least a portion of the of the organic light emitting diode ( 7 ) generated internally to the sensor element ( 9 ). Optoelectronic assembly ( 10 ) according to claim 8, in which the light guide is separated from the support ( 3 ) is formed. Method for operating an optoelectronic assembly ( 10 ), in which - light by means of a flexible organic light emitting diode ( 7 ) is generated and emitted, - by means of a with the organic light emitting diode ( 7 ) directly physically coupled sensor element ( 9 ) a curvature value is determined that is representative of a curvature of the flexible organic light emitting diode ( 7 ), - a predetermined action is performed as a function of the determined curvature value. The method of claim 10, wherein the predetermined action comprises outputting a signal representative of the curvature of the flexible organic light emitting diode. 7 ). The method of claim 11, wherein the signal is representative of a critical curvature of the flexible organic light emitting diode (10). 7 ) is almost reached, reached or exceeded. Method according to one of Claims 10 to 12, in which the predetermined action is a triggering of the organic light-emitting diode ( 7 ) having. Method according to Claim 13, in which the organic light-emitting diode ( 7 ) is controlled so that the light intensity remains approximately constant or constant. Method for producing an optoelectronic assembly, in which a flexible organic light-emitting diode ( 7 ) is formed for generating and emitting light and a sensor element ( 9 ) which detects a curvature value representative of a curvature of the flexible organic light emitting diode ( 7 ) is formed, and with the organic light emitting diode ( 7 ) is directly physically coupled. Method according to Claim 15, in which the organic light-emitting diode ( 7 ) and the sensor element ( 9 ) are designed to be a common carrier ( 12 ) exhibit. Method for operating an optoelectronic assembly ( 10 ), in which - light by means of a flexible organic light emitting diode ( 7 ) is generated and emitted, - the flexible organic light emitting diode ( 7 ) is curved by means of an actuator, - depending on a control of the actuator and / or a position of an actuating element of the actuator, a curvature value is determined which is representative for a curvature of the flexible organic light emitting diode ( 7 ), and - a predetermined action is performed as a function of the determined curvature value.

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