DE102004015307A1 - Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface - Google Patents
Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface Download PDFInfo
- Publication number
- DE102004015307A1 DE102004015307A1 DE102004015307A DE102004015307A DE102004015307A1 DE 102004015307 A1 DE102004015307 A1 DE 102004015307A1 DE 102004015307 A DE102004015307 A DE 102004015307A DE 102004015307 A DE102004015307 A DE 102004015307A DE 102004015307 A1 DE102004015307 A1 DE 102004015307A1
- Authority
- DE
- Germany
- Prior art keywords
- temperature jump
- preparing
- carbon
- semiconductor body
- subsequent treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052799 carbon Inorganic materials 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Preparing the surface (3) of a semiconductor body (1) for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface. Preferred Features: The specific atmosphere contains oxygen, preferably atomic oxygen, ozone or a gas which releases atomic oxygen or ozone. The temperature jump is carried out at 400-500 [deg] C. The surface is cleaned before the temperature jump.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004015307A DE102004015307A1 (en) | 2004-03-29 | 2004-03-29 | Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004015307A DE102004015307A1 (en) | 2004-03-29 | 2004-03-29 | Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102004015307A1 true DE102004015307A1 (en) | 2005-10-20 |
Family
ID=35033944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004015307A Ceased DE102004015307A1 (en) | 2004-03-29 | 2004-03-29 | Preparing the surface of a semiconductor body for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102004015307A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5028560A (en) * | 1988-06-21 | 1991-07-02 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate |
US5849102A (en) * | 1996-02-28 | 1998-12-15 | Nec Corporation | Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere |
US6451713B1 (en) * | 2000-04-17 | 2002-09-17 | Mattson Technology, Inc. | UV pretreatment process for ultra-thin oxynitride formation |
US6589877B1 (en) * | 1998-02-02 | 2003-07-08 | Micron Technology, Inc. | Method of providing an oxide |
EP1427003A2 (en) * | 2002-12-02 | 2004-06-09 | OHMI, Tadahiro | Semiconductor device and method of manufacturing the same |
-
2004
- 2004-03-29 DE DE102004015307A patent/DE102004015307A1/en not_active Ceased
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5028560A (en) * | 1988-06-21 | 1991-07-02 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate |
US5849102A (en) * | 1996-02-28 | 1998-12-15 | Nec Corporation | Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere |
US6589877B1 (en) * | 1998-02-02 | 2003-07-08 | Micron Technology, Inc. | Method of providing an oxide |
US6451713B1 (en) * | 2000-04-17 | 2002-09-17 | Mattson Technology, Inc. | UV pretreatment process for ultra-thin oxynitride formation |
EP1427003A2 (en) * | 2002-12-02 | 2004-06-09 | OHMI, Tadahiro | Semiconductor device and method of manufacturing the same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8131 | Rejection |