DE10200372A1 - Power semiconductor module has one contact surface of semiconductor element contacting metallized structure via solder material and second contact surface contacting metallized structure via bonding wire - Google Patents

Power semiconductor module has one contact surface of semiconductor element contacting metallized structure via solder material and second contact surface contacting metallized structure via bonding wire

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Publication number
DE10200372A1
DE10200372A1 DE10200372A DE10200372A DE10200372A1 DE 10200372 A1 DE10200372 A1 DE 10200372A1 DE 10200372 A DE10200372 A DE 10200372A DE 10200372 A DE10200372 A DE 10200372A DE 10200372 A1 DE10200372 A1 DE 10200372A1
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Germany
Prior art keywords
power semiconductor
semiconductor module
module according
electrically
contact surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10200372A
Other languages
German (de)
Inventor
Mark Bakran
Hans-Guenter Eckel
Karl Fleisch
Hans-Joachim Knaak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
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Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE10200372A priority Critical patent/DE10200372A1/en
Publication of DE10200372A1 publication Critical patent/DE10200372A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The semiconductor module has at least one disc-shaped semiconductor element (8), and a substrate (4-7) provided by an electrically-insulating plate (4) with electrically-conducting metallized structures (5,6,7). One contact surface of the semiconductor element is electrically and thermally connected to one of the metallized structures via a solder material (9), a second contact surface of the semiconductor element contacting a second metallized structure via a bonding wire (11,14,15).

Description

Die Erfindung betrifft ein Leistungshalbleitermodul. The invention relates to a power semiconductor module.

Leistungsdioden werden üblicherweise in zwei verschiedenen Bauformen, Chipdioden und Scheibendioden, hergestellt. Kleine quadratische Chipdioden haben eine recht hohe Durchlassspannung, eine niedrige Stoßstromfestigkeit und ein ungünstiges Verhältnis von aktiver Chipfläche zu Randpassivierung. Sie lassen sich aufgrund des positiven Temperaturkoeffizienten ihrer Durchlassspannungen parallel schalten. So werden beispielsweise bei Leistungshalbleitermodulen häufig mehrere Dioden parallel in einem Modulgehäuse auf Substrate gelötet. Die Kühlung erfolgt über die Bodenplatte des Modulgehäuses. Der thermische Übergang ist dabei aufgrund der Lötung gut. Die elektrische Kontaktierung wird auf der Unterseite durch auf das Substrat aufgebrachte Kupferbahnen und auf der Oberseite durch Bondverbindungen hergestellt. Die Isolierung erfolgt durch das Substrat, das beispielsweise aus Aluminiumoxid oder Aluminiumnitrid besteht. Die Modulgehäuse werden dabei in gleicher Weise für Dioden, IGBT (Insulated Gate Bipolar Transistor) sowie für beide zusammen verwendet. Ein derartiges Modul ist beispielsweise aus der DE 44 21 319 A1 bekannt. Umrichterkonstruktionen mit derartigen Leistungshalbleitermodulen sind daher sehr universell einsetzbar. Power diodes are usually divided into two Designs, chip diodes and disc diodes. little one square chip diodes are quite high Forward voltage, a low surge current resistance and an unfavorable one Ratio of active chip area to edge passivation. she can be due to the positive temperature coefficient connect their forward voltages in parallel. So be for example in the case of power semiconductor modules, often several Diodes soldered in parallel in a module housing on substrates. The cooling takes place via the base plate of the module housing. The thermal transition is good due to the soldering. The electrical contact is made on the bottom copper tracks applied to the substrate and on the Top side made by bond connections. The insulation takes place through the substrate, for example Alumina or aluminum nitride. The module housing will be in the same way for diodes, IGBT (Insulated Gate Bipolar transistor) and used for both together. On such a module is for example from DE 44 21 319 A1 known. Inverter designs with such Power semiconductor modules can therefore be used very universally.

Große, kreisrunde Scheibendioden lassen sich aufgrund des negativen Temperaturkoeffizienten ihrer Durchlassspannung nicht parallel schalten. Sie haben jedoch bessere elektrische Eigenschaften und durch ihre Größe ein besseres Verhältnis zwischen aktiver Fläche und Randpassivierung. Sie werden durchkontaktiert, wobei ein zur elektrischen Kontaktierung und zur Lagerung vorgesehener Spannverband entweder in dem Leistungsmodul integriert ist oder vom Anwender realisiert werden muss. Bei einem Leistungshalbleitermodul mit integriertem Spannverband erfolgt die Kühlung ebenfalls über die Bodenplatte und die elektrische Isolierung durch das Substrat. Ein Modul mit integriertem Spannverband hat eine erheblich höhere Bauhöhe als die oben erwähnten Leistungshalbleitermodule mit Lötkontakt. Scheibendioden lassen sich daher nicht in Konstruktionen einsetzen, die für aufgelötete Chipdioden aufweisende Leistungshalbleitermodule ausgelegt wurden. Bei vom Anwender zu realisierenden Durchkontaktierungen muss die Isolierung zwischen Diode und Kühlung mittels Keramikscheiben erfolgen. Eine derartige Konstruktion ist nicht für Umrichterkonstruktionen geeignet. Large, circular disc diodes can be negative temperature coefficient of their forward voltage is not connect in parallel. However, they have better electrical ones Properties and because of their size a better ratio between active area and edge passivation. you will be plated through, one for electrical contacting and Storage provided tension bandage either in the Power module is integrated or can be implemented by the user got to. With a power semiconductor module with integrated Clamping also takes place via the cooling Base plate and electrical insulation through the substrate. On Module with integrated tension bandage has a considerably higher one Height than the power semiconductor modules mentioned above Solder contact. Disc diodes cannot therefore be used Use constructions for soldered chip diodes having power semiconductor modules were designed. At from Vias to be implemented by users must be Isolation between diode and cooling using ceramic disks respectively. Such a construction is not for Inverter designs suitable.

Aufgabe der Erfindung ist es, ein Leistungshalbleitermodul zu schaffen, das einerseits die besseren elektrischen Eigenschaften von Scheibendioden ausnützt und andererseits die mechanischen Eigenschaften von Modulen mit Chipdioden aufweist. The object of the invention is to provide a power semiconductor module create the one hand the better electrical Properties of disc diodes and on the other hand the has mechanical properties of modules with chip diodes.

Die Aufgabe wird gelöst durch ein Leistungshalbleitermodul gemäß Patentanspruch 1. Ausgestaltungen und Weiterbildungen des Erfindungsgedankens sind Gegenstand von Unteransprüchen. The task is solved by a power semiconductor module according to claim 1. Refinements and developments of the inventive concept are the subject of dependent claims.

Vorteil der erfindungsgemäßen Leistungshalbleiermodule ist es, dass die darin verwendeten Scheibendioden eine geringere Durchlassspannung sowie eine geringere Siliziumfläche aufweisen, da eine einzelne große Diode weniger Randfläche benötigt als viele kleine Dioden. Andererseits sind die äußeren Abmessungen mit denen von Chipdiodenmodulen identisch oder zumindest vergleichbar, so dass ein mechanischer Ersatz von "Chipdiodenmodulen" durch "Scheibendiodenmodule" bei wie gesagt verbesserten elektrischen Eigenschaften möglich ist. Darüber hinaus ist es möglich, die elektrisch vorteilhaften Scheibendioden zusammen mit IGBTs in einem einzigen gemeinsamen Gehäuse unterzubringen, was bisher nur den Chipdioden vorbehalten war. Es können also die üblichen IGBT-Modulgehäuse mit Scheibendioden verschiedener Größe bestückt werden, die dann beispielsweise als Freilaufdioden den IGBTs parallelgeschaltet werden oder als Rückschwingdiode oder Gleichrichterdiode einzeln eingesetzt werden können. Darüber hinaus ist bei den erfindungsgemäßen Leistungshalbleitermodulen die Wärmeabfuhr der Scheibenzellen aufgrund der stofflichen Verbindung verbessert und die Montierbarkeit gegenüber den bisherigen Halterungen für Scheibendioden deutlich verbessert. The advantage of the power half module according to the invention is it that the disc diodes used in it have a lower Forward voltage and a smaller silicon area have because a single large diode requires less edge area than many small diodes. On the other hand, the outside Dimensions identical to or those of chip diode modules at least comparable, so that a mechanical replacement of "Chip diode modules" by "disk diode modules" in as I said improved electrical properties is possible. About that it is also possible to use the electrically advantageous Disc diodes together with IGBTs in a single common Housing to accommodate what was previously only the chip diodes was reserved. So you can use the usual IGBT module housing Disc diodes of various sizes can be assembled, which then for example as freewheeling diodes for IGBTs can be connected in parallel or as a flyback diode or rectifier diode can be used individually. In addition, the Power semiconductor modules according to the invention heat dissipation the disc cells due to the material connection improved and the assemblability compared to the previous ones Mounts for disc diodes significantly improved.

Erreicht wird dies im einzelnen durch ein Leistungshalbleitermodul mit

  • - mindestens einem Halbleiterbauelement in Scheibenform, das elektrische Kontaktflächen aufweist,
  • - einem Substrat, das eine elektrisch isolierende Platte und darauf befindliche, elektrisch leitende Metallisierungsstrukturen aufweist (z. B. DCB, Aluminiumoxid, Aluminiumnitrid oder Beryliumoxid mit Kupfermetallisierung),
  • - wobei eine der Kontaktflächen mit einer der Metallisierungsstrukturen mittels einer stofflichen Verbindung (Löten, Schweißen, Kleben) elektrisch und thermisch leitend sowie mechanisch fest verbunden ist und
  • - mindestens eine der Kontaktflächen mittels einer Drahtverbindung mit einer anderen Metallisierungsstruktur elektrisch in Kontakt steht.
This is achieved in detail by a power semiconductor module
  • at least one semiconductor component in the form of a disk, which has electrical contact surfaces,
  • a substrate which has an electrically insulating plate and electrically conductive metallization structures thereon (for example DCB, aluminum oxide, aluminum nitride or berylium oxide with copper metallization),
  • - Wherein one of the contact surfaces with one of the metallization structures by means of a material connection (soldering, welding, gluing) is electrically and thermally conductive and mechanically firmly connected and
  • - At least one of the contact areas is in electrical contact with another metallization structure by means of a wire connection.

Bevorzugst wird dabei das Substrat elektrisch und thermisch leitend sowie mechanisch fest mit einer Grundplatte verbunden. Auf diese Weise ist die Wärmeableitung vom Halbleiterbauelement weg verbessert. The substrate is preferably electrical and thermal conductive and mechanically fixed with a base plate connected. In this way, the heat dissipation from Semiconductor device improved away.

Als elektrisch und thermisch leitende sowie mechanisch feste Verbindung zwischen Metallisierungsstruktur und Halbleiterbauelement und/oder zwischen Substrat und Grundplatte wird bevorzugt eine Lötverbindung oder eine NTV-Verbindung vorgesehen. Eine Alternative dazu wäre auch die Verbindung mittels leitendem Klebstoff. As electrically and thermally conductive as well as mechanically firm Connection between metallization structure and Semiconductor component and / or between substrate and base plate preferably a solder connection or an NTV connection intended. An alternative would also be the connection using conductive adhesive.

Die Grundplatte kann mit einer Kühleinrichtung thermisch gekoppelt sein, die eine Wärmesenke für das Halbleiterbauelement darstellt. Als Kühleinrichtung kommen speziell ausgebildete Kühlkörper, Wasserkühlungen oder ähnliches infrage. The base plate can be thermally cooled be coupled, which is a heat sink for that Representing semiconductor device. As a cooling device come special trained heat sink, water cooling or similar in question.

Als Drahtverbindung wird bevorzugt eine Bond-Verbindung vorgesehen, wie sie in der Halbleitertechnik üblich ist, angewendet. Bond-Verbindungen erlauben eine schnelle und einfach durchzuführende Verbindung zwischen zwei Punkten, wobei der Bond-Draht vorzugsweise mit den Kontaktflächen - im vorliegenden Fall die Metallisierungsschichten und die Kontaktflächen des Halbleiterbauelements - durch Mikroschweißen oder Verlöten elektrisch leitend verbunden wird. A bond connection is preferred as the wire connection provided, as is common in semiconductor technology, applied. Bond connections allow quick and easy connection to be carried out between two points, the Bond wire preferably with the contact surfaces - in the present case, the metallization layers and the Contact surfaces of the semiconductor component - by micro welding or Soldering is electrically connected.

Zur externen Kontaktierung werden vorzugsweise die Metallisierungsstrukturen mit externen Anschlüssen elektrisch verbunden. Die Verbindung kann dabei über speziell ausgebildete Drahtbrücken, Blechteile etc. erfolgen. For external contacting, the Metallization structures with external connections electrical connected. The connection can be made via specially trained Wire jumpers, sheet metal parts, etc. take place.

Vorzugsweise sind Grundplatte, Substrat und Halbleiterbauelement(e) in einem Gehäuse untergebracht, wobei die Grundplatte einen Teil der Außenwandung des Gehäuses bildet. Das Gehäuse kann dabei zumindest teilweise mit Vergussmasse (z. B. Silikon) ausgefüllt sein. Die Vergussmasse verbessert die Wärmeabfuhr und die mechanischen Eigenschaften des Moduls. Base plate, substrate and Semiconductor component (s) housed in a housing, the base plate forms part of the outer wall of the housing. The housing can be at least partially coated with potting compound (e.g. Silicone). The potting compound improves the Heat dissipation and the mechanical properties of the module.

Schließlich kann zwischen dem Halbleiterbauelement und der Metallisierungsstruktur eine Zwischenschicht (beispielsweise eine Molybdänplatte) angeordnet sein, um vorteilhafterweise unterschiedliche Ausdehnungskoeffizienten aneinander anzupassen. Finally, between the semiconductor device and the Metallization structure an intermediate layer (for example a molybdenum plate) may be arranged to advantageously different coefficients of expansion to each other adapt.

Die Erfindung wird nachfolgend anhand des in den beiden Figuren der Zeichnung dargestellten Ausführungsbeispiels näher erläutert. Es zeigt: The invention is illustrated below in the two Figures of the drawing shown embodiment closer explained. It shows:

Fig. 1 eine bevorzugte Ausführungsform eines erfindungsgemäßen Leistungshalbleitermoduls im Querschnitt und Fig. 1 shows a preferred embodiment of a power semiconductor module according to the invention in cross-section and

Fig. 2 das Leistungshalbleitermodul nach Fig. 1 in der Draufsicht ohne Gehäuse. Fig. 2 shows the power semiconductor module of FIG. 1 in plan view without a housing.

Bei dem in Fig. 1 gezeigten Ausführungsbeispiel eines erfindungsgemäßen Leistungshalbleitermoduls ist über einem Kühlkörper 1 eine Grundplatte 2, beispielsweise aus AlSiC, angeordnet, die thermisch leitend und mechanisch fest mit dem Kühlkörper 1 verbunden ist. Auf der Grundplatte 2 ist auf der dem Kühlkörper 1 gegenüberliegenden Seite eine Lotschicht 3 aufgebracht, die ein eine elektrisch isolierende Platte 4 (aus AlN) aufweisendes Substrat elektrisch und thermisch leitend sowie mechanisch fest mit der Grundplatte 2 verbindet. In the exemplary embodiment of a power semiconductor module according to the invention shown in FIG. 1, a base plate 2 , for example made of AlSiC, is arranged above a heat sink 1 and is thermally conductive and mechanically fixed to the heat sink 1 . A solder layer 3 is applied to the base plate 2 on the side opposite the heat sink 1 , and connects a substrate having an electrically insulating plate 4 (made of AlN) to the base plate 2 in an electrically, thermally conductive and mechanically fixed manner.

Auf der nicht verlöteten Seite der Platte 4 sind Metallisierungsstrukturen 5, 6 und 7 angeordnet, die fest mit der Platte 4 verbunden sind. Auf der Metallisierungsstruktur 6 befindet sich dabei ein scheibenförmiges Halbleiterbauelement 8, das über eine Lotschicht 9 auf eine Molybdänplatte 10 aufgelötet ist. Die Molybdänplatte 10 ist ihrerseits auf der Metallisierungsstruktur 6 verschweißt. Metallization structures 5 , 6 and 7 are arranged on the unsoldered side of the plate 4 and are firmly connected to the plate 4 . A disc-shaped semiconductor component 8 is located on the metallization structure 6 and is soldered onto a molybdenum plate 10 via a solder layer 9 . The molybdenum plate 10 is in turn welded to the metallization structure 6 .

Das scheibenförmige Halbleiterbauelement 8 ist an seiner Oberseite über einen Bond-Draht 11 mit einer Metallisierungsstruktur 5 verbunden, auf der auch ein Halbleiterchip 12 mittels einer Lotschicht 13 aufgelötet ist. Der Halbleiterchip 12 ist dabei über Bond-Drähte 14 und 15 mit der Metallisierungsstruktur 6 bzw. einer Metallisierungsstruktur 7 verbunden. Von den Metallisierungsstrukturen 5, 6 und 7 führen jeweils Kontaktbrücken 16, 17, 18 durch ein die Platte 4, die Metallisierungsstrukturen 5, 6, 7, die Molybdänplatte 9, das scheibenförmige Halbleiterbauelement 8 sowie den Halbleiterchip 12 umgebendes Gehäuse 19 externe Anschlüsse bildend nach außen. Das Gehäuse 19, das an fünf Seiten aus Wänden eines topfförmigen Plastikpressteils gebildet wird, ist an der sechsten Seite durch die Grundplatte 2 abgeschlossen. Das Gehäuse 19 ist dabei vollständig mit einer Vergussmasse 20 aus Silikon ausgefüllt. The disk-shaped semiconductor component 8 is connected on its upper side via a bond wire 11 to a metallization structure 5 , on which a semiconductor chip 12 is also soldered by means of a solder layer 13 . The semiconductor chip 12 is connected to the metallization structure 6 or a metallization structure 7 via bond wires 14 and 15 . Contact bridges 16 , 17 , 18 lead from the metallization structures 5 , 6 and 7 through a housing 19 surrounding the plate 4 , the metallization structures 5 , 6 , 7 , the molybdenum plate 9 , the disk-shaped semiconductor component 8 and the semiconductor chip 12, forming external connections , The housing 19 , which is formed on five sides by walls of a pot-shaped plastic pressed part, is closed on the sixth side by the base plate 2 . The housing 19 is completely filled with a casting compound 20 made of silicone.

In Fig. 2 ist das Leistungshalbleitermodul nach Fig. 1 in der Draufsicht ohne Gehäuse dargestellt. Die Metallisierungsstruktur 5 ist dabei U-förmig in einer Ebene ausgeführt und umschließt an drei Seiten die rechteckförmig in der Ebene ausgebildete Metallisierungsstruktur 6. Die Metallisierungsstruktur 7 ist dabei neben der Metallisierungsstruktur 5 platziert. Der Halbleiterchip 12 sitzt dabei an einem Schenkel der U-förmigen Metallisierungsstruktur 5, deren anderer Schenkel die Kontaktierungsbrücke 16 und den Bonddraht 11 abschließt. Der Bonddraht 11 führt dabei auf die Oberseite des scheibenförmigen Halbleiterbauelements 8, dessen andere Seite über die Molybdänplatte 10 mit der Metallisierungsstruktur 6 verbunden ist. Auf der Metallisierungsschicht 6 endet auch der Bond-Draht 14, dessen anderes Ende mit dem Chip 12 verbunden ist. Die Metallisierungsschicht 6 ist ferner noch mit der Kontaktierungsbrücke 17 beispielsweise durch Löten verbunden. Schließlich ist über den Bond-Draht 15 der Halbleiterchip 12 mit der Metallisierungsstruktur 7 verbunden, an der die Kontaktierungsbrücke 18 fest gelötet ist. FIG. 2 shows the power semiconductor module according to FIG. 1 in a top view without a housing. The metallization structure 5 is U-shaped in one plane and encloses the metallization structure 6 which is rectangular in the plane on three sides. The metallization structure 7 is placed next to the metallization structure 5 . The semiconductor chip 12 is seated on one leg of the U-shaped metallization structure 5 , the other leg of which closes the contacting bridge 16 and the bonding wire 11 . The bond wire 11 leads to the top of the disk-shaped semiconductor component 8 , the other side of which is connected to the metallization structure 6 via the molybdenum plate 10 . The bond wire 14 , whose other end is connected to the chip 12 , also ends on the metallization layer 6 . The metallization layer 6 is also connected to the contacting bridge 17, for example by soldering. Finally, the semiconductor chip 12 is connected via the bond wire 15 to the metallization structure 7 , to which the contacting bridge 18 is firmly soldered.

In Fig. 2 ist bei der gewählten Darstellung schließlich noch das unter den Metallisierungsstrukturen 5, 6, 7 liegende Substrat 4 sowie die darunter befindliche Grundplatte 2 zu ersehen. Beim gezeigten Ausführungsbeispiel dient das scheibenförmige Bauelement 8 als Freilaufdiode und der Halbleiterchip 12 als Transistor, insbesondere als Insulated-Gate-Bipolar- Transistor (IGBT). In Fig. 2 nor the substrate underlying the metallization 5, 6, 7, 4 and the base plate 2 underneath finally can be seen at the selected representation. In the embodiment shown, the disk-shaped component 8 serves as a freewheeling diode and the semiconductor chip 12 as a transistor, in particular as an insulated gate bipolar transistor (IGBT).

Um also die mechanische Kompatibilität mit üblichen IGBT- Modulen zu erreichen, ist bei der Erfindung auf den als in seinen Abmessungen zu hoch erachteten, üblichen Spannverband verzichtet worden. Das als Diode eingesetzte scheibenförmige Halbleiterbauelement ist daher mit dem Substrat (z. B. Aluminiumoxid oder Aluminiumnitrit) und dieses wiederum mit einer Bodenplatte verlötet oder mit einer NTV-Verbindung verbunden worden. Zwischen dem Substrat und der Diode wurde eine Zwischenlage in Form einer Molybdänplatte eingefügt, die gegebenenfalls aber auch weggelassen werden kann. In order to ensure mechanical compatibility with conventional IGBT To achieve modules is in the invention on the as in The usual tension bandage, which is considered too high in its dimensions been waived. The disc-shaped used as a diode Semiconductor component is therefore connected to the substrate (e.g. Aluminum oxide or aluminum nitrite) and this in turn with a Base plate soldered or connected to an NTV connection Service. One was between the substrate and the diode Liner inserted in the form of a molybdenum plate, the but can optionally also be omitted.

Die verbleibende elektrische Kontaktierung wird mittels Bond- Drähten vorgenommen. Die Verbindung zu den elektrischen Kontakten erfolgt durch Lötung der externen Kontakte auf das Keramiksubstrat, d. h. auf den Metallisierungsstrukturen. The remaining electrical contact is made using bond Wires made. The connection to the electrical Contacts are made by soldering the external contacts to the Ceramic substrate, d. H. on the metallization structures.

Das so entstandene Leistungshalbleitermodul vereint die guten elektrischen Eigenschaften der Scheibendiode mit der guten Wärmeableitung einer stofflichen Verbindung. Daraus ergibt sich eine Kompatibilität mit üblichen IGBT-Modulen und eine einfache Montierbarkeit. Anstelle des als Ausführungsbeispiel gezeigten Verbunds eines IGBTs mit einer Diode kann in gleicher Weise aber auch beispielsweise die Diode allein in einem IGBT kompatiblen Gehäuse oder in Kombination mit beliebigen Bauelementen untergebracht werden. The resulting power semiconductor module combines the good ones electrical characteristics of the disc diode with the good Heat dissipation of a material connection. It follows compatibility with common IGBT modules and a easy to assemble. Instead of that as an embodiment Composite of an IGBT with a diode shown in in the same way but also, for example, the diode alone in one IGBT compatible housing or in combination with any Components are housed.

Claims (12)

1. Leistungshalbleitermodul mit
mindestens einem Halbleiterbauelement (8) in Scheibenform, das elektrische Kontaktflächen aufweist,
einem Substrat (4-7), das eine elektrisch isolierende Platte (4) und darauf befindliche, elektrisch leitende Metallisierungsstrukturen (5, 6, 7) aufweist, wobei
eine der Kontaktflächen mit einer der Metallisierungsstrukturen (5, 6, 7) elektrisch und thermisch leitend sowie mechanisch fest mittels einer stofflichen Verbindung (9) verbunden ist und
mindestens eine der Kontaktflächen mittels einer Drahtverbindung (11, 14, 15) mit einer anderen Metallisierungsstruktur (5, 6, 7) in Kontakt steht. 1. Power semiconductor module with
at least one semiconductor component ( 8 ) in the form of a disk, which has electrical contact surfaces,
a substrate ( 4-7 ) which has an electrically insulating plate ( 4 ) and electrically conductive metallization structures ( 5 , 6 , 7 ) located thereon, wherein
one of the contact surfaces is connected to one of the metallization structures ( 5 , 6 , 7 ) in an electrically and thermally conductive and mechanically fixed manner by means of a material connection ( 9 ) and
at least one of the contact areas is in contact with another metallization structure ( 5 , 6 , 7 ) by means of a wire connection ( 11 , 14 , 15 ). 2. Leistungshalbleitermodul nach Anspruch 1, bei dem das Substrat (4-7) elektrisch und thermisch leitend sowie mechanisch fest mit einer Grundplatte (2) verbunden ist. 2. Power semiconductor module according to claim 1, wherein the substrate ( 4-7 ) is electrically and thermally conductive and mechanically fixed to a base plate ( 2 ). 3. Leistungshalbleitermodul nach Anspruch 1 oder 2, bei dem als elektrisch und thermisch leitende, mechanisch feste, stoffliche Verbindung eine Lötverbindung (9) und/oder eine NTV-Verbindung vorgesehen ist. 3. Power semiconductor module according to claim 1 or 2, in which a soldered connection ( 9 ) and / or an NTV connection is provided as the electrically and thermally conductive, mechanically strong, material connection. 4. Leistungshalbleitermodul nach einem der vorherigen Ansprüche, bei dem die Grundplatte (2)mit einer Kühleinrichtung (1) thermisch gekoppelt ist. 4. Power semiconductor module according to one of the preceding claims, wherein the base plate ( 2 ) is thermally coupled to a cooling device ( 1 ). 5. Leistungshalbleitermodul nach einem der vorherigen Ansprüche, bei dem die Drahtverbindung (11, 14, 15) eine Bond-Verbindung ist. 5. Power semiconductor module according to one of the preceding claims, wherein the wire connection ( 11 , 14 , 15 ) is a bond connection. 6. Leistungshalbleitermodul nach einem der vorherigen Ansprüche, bei dem Metallisierungsstrukturen (5, 6, 7) mit externen Anschlüssen (16, 17, 18) elektrisch verbunden sind. 6. Power semiconductor module according to one of the preceding claims, in which the metallization structures ( 5 , 6 , 7 ) are electrically connected to external connections ( 16 , 17 , 18 ). 7. Leistungshalbleitermodul nach einem der vorherigen Ansprüche, bei dem weitere elektrische Bauelemente (12) mit mehreren Metallisierungsstrukturen (5, 6, 7) elektrisch verbunden sind. 7. Power semiconductor module according to one of the preceding claims, in which further electrical components ( 12 ) with a plurality of metallization structures ( 5 , 6 , 7 ) are electrically connected. 8. Leistungshalbleitermodul nach einem der vorherigen Ansprüche, bei dem Grundplatte (2), Substrat (4, 5, 6, 7) und Halbleiterbauelement(e) (8, 12) in einem Gehäuse (19, 2) untergebracht sind. 8. Power semiconductor module according to one of the preceding claims, in which the base plate ( 2 ), substrate ( 4 , 5 , 6 , 7 ) and semiconductor component (s) ( 8 , 12 ) are accommodated in a housing ( 19 , 2 ). 9. Leistungshalbleitermodul nach Anspruch 8, bei dem das Gehäuse mit Vergussmasse (20) zumindest teilweise ausgefüllt ist. 9. Power semiconductor module according to claim 8, wherein the housing is at least partially filled with potting compound ( 20 ). 10. Leistungshalbleitermodul nach einem der vorherigen Ansprüche, bei dem bei dem zwischen Halbleiterbauelement (8) und Metallisierungsstruktur (6) eine Zwischenschicht (8) angeordnet ist. 10. Power semiconductor module according to one of the preceding claims, in which an intermediate layer ( 8 ) is arranged in the between the semiconductor component ( 8 ) and metallization structure ( 6 ). 11. Leistungshalbleitermodul nach einem der vorherigen Ansprüche, bei dem das Halbleiterbauelement (8) eine Diode ist. 11. Power semiconductor module according to one of the preceding claims, in which the semiconductor component ( 8 ) is a diode. 12. Leistungshalbleitermodul nach einem der vorherigen Ansprüche, bei dem das weitere elektrische Bauelement (12) ein Insulated-Gate-Bipolar-Transistor ist. 12. Power semiconductor module according to one of the preceding claims, wherein the further electrical component ( 12 ) is an insulated gate bipolar transistor.
DE10200372A 2002-01-08 2002-01-08 Power semiconductor module has one contact surface of semiconductor element contacting metallized structure via solder material and second contact surface contacting metallized structure via bonding wire Withdrawn DE10200372A1 (en)

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