CN2689539Y - Ridged waveguiding polarized non-related semiconductor optical amplifiers - Google Patents
Ridged waveguiding polarized non-related semiconductor optical amplifiers Download PDFInfo
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- CN2689539Y CN2689539Y CN 200420017634 CN200420017634U CN2689539Y CN 2689539 Y CN2689539 Y CN 2689539Y CN 200420017634 CN200420017634 CN 200420017634 CN 200420017634 U CN200420017634 U CN 200420017634U CN 2689539 Y CN2689539 Y CN 2689539Y
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Abstract
The utility model discloses a ridged wave guiding polarized non-related semiconductor optical amplifier which orderly comprises an InP backing, an N-shaped InP cushioning layer, a passive waveguide layer, an active region and a ridged waveguide; the top layer and the lower layer of the utility model are provided with electrodes. The utility model is characterized in that a second wide ridged waveguide is arranged between the passive waveguide layer and the active region; the ridged waveguide is in a lateral taper shape; a light far field is matched with an optical fiber far field by the ridged waveguide and the second wide ridged waveguide; the ridged waveguide is divided into three parts, and ridged width is decreased from the two stages laterally. The utility model not only has the characteristics of reliable and simple manufacturing process and high rate of finished products, but also has the advantages of low polarization sensitivity, and good far-field performance; the utility model can obtain approximately circular far-field facula and has high coupling efficiency and high coupling aligning tolerance with waveguides or optical fiber. The utility model can be widely used for optical network, photon integration and photoelectron integration.
Description
Technical field
The utility model relates to a kind of semiconductor optical amplifier, is specifically related to the polarization irrelevant semiconductor optical amplifier (SSC-SOA) of a kind of ridge waveguide structure, integrated modular spot converter.
Background technology
The polarization irrelevant semiconductor optical amplifier (SOA) will play more and more important effect as the key function unit in Primary Component in the optical-fiber network and photon integrated (PIC), photoelectron integrated (OEIC) device.A coupling technique that key subject is optical device and waveguide or optical fiber of the integrated and integrated opto-electronics device of development photon, high coupling efficiency, the high tolerance that is coupled and aligned is its basic demand.Therefore,, comprise semiconductor optical amplifier for most photoelectric device, with the coupling efficiency of waveguide or optical fiber all be an important issue.In glass optical fiber, because its very little refringence (Δ n＜5 * 10
-3) caused weak guide lights pattern, and typical mode spot-size is 8-10 μ m; And in semiconductor waveguide device, so little refringence can only lean on the extremely small change of component of semi-conducting material to realize, this has great difficulty in the actual process process.Usually, in the semiconductor photoelectric device structure, Δ n is generally greater than 1 * 10
-2Cause mode spot-size less than 2 μ m, and, the mould shape of spot of semiconductor laser device has the height asymmetry, this will further cause the mould field mismatch between semiconductor waveguide and the optical fiber, obviously, the coupling loss problem of photoelectric device and optical fiber is one of the problem that must consider in optical-fiber network is used.
There are many methods to can be used for improving the coupling efficiency of waveguide or optical fiber and device, as adopt lenticule or the band lens tapered fiber, but, do not change the words of mould field shape iff just changing mode spot-size, there is the unmatched problem in mould field all the time in these methods, and simultaneously, the tolerance that is coupled and aligned also can't improve, this has just caused the very high packaging cost of optical active component, and packaging cost might be up to 90% of device total cost; Another kind method is to insert a silica based waveguide with mould field translation function between device chip and optical fiber.Refringence between this silica based guide technology permission sandwich layer and the cover layer can be up to 1 * 10
-2Mode spot-size is dwindled with activation and semiconductor device waveguide be complementary, though can access the mould field of coupling and higher coupling efficiency like this, because alignment tolerance still can't be improved, therefore, still can't reduce the coupling difficulty and the packaging cost of active photonic device.
In order to obtain big and symmetrical near field spot pattern at the chip end face, number of research projects concentrates on the single slice integration technique of semiconductor photoelectronic device and spot-size converter (Spot-Size Converter-SSC).Nearest scheme can reduce coupling loss simultaneously and improve the tolerance that is coupled and aligned, thereby packaging cost is effectively reduced and can realize photon integrated (PIC) or photoelectron integrated (OEIC).Spot-size converter (SSC) in fact is exactly a tapered transmission line, so the design decision of tapered transmission line the integrated technology of spot-size converter and device, in the past few years, the design of many tapered transmission lines is in the news, and can be divided into following several big class from the design of tapered transmission line: side direction tapered transmission line, vertical direction tapered transmission line, mixed type tapered transmission line (in conjunction with the tapered transmission line of side direction and vertical direction) and special construction tapered transmission line; Can be divided into ridge waveguide (RWG) structure and bury (BH) structure from device architecture.About the making of tapered transmission line, for ridge side direction tapered transmission line, its manufacture craft is relatively comparatively simple and direct with other tapered transmission line structure, usually adopts the technologies such as photoetching, etching of standard just can finish; For vertical direction tapered transmission line and mixed type tapered transmission line, its manufacture craft is more complex than the side direction tapered transmission line, the thickness that need to adopt many special growths and lithographic technique could progressively change ducting layer, for this class tapered transmission line structure of great majority, usually need repeatedly extension just can finish, increase the difficulty of material growth, also reduced the rate of finished products of device simultaneously.Equally, for the buried structure device, also need repeatedly extension just can finish.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned weak point, and a kind of ridge waveguide polarization irrelevant semiconductor optical amplifier is provided, and this amplifier architecture has simple and reliable process, the advantage that device yield is high.
A kind of ridge waveguide polarization irrelevant semiconductor optical amplifier that the utility model provides, comprise InP substrate, n type InP resilient coating, passive wave guide layer, the wide ridge waveguide in the second level, active area, ridge waveguide successively, its top layer and low layer are provided with electrode, it is characterized in that: between passive wave guide layer and active area, be provided with the wide ridge waveguide in the second level, described ridge waveguide is the side direction pyramidal structure, makes far field beam and optical fiber far field coupling jointly with the wide ridge in the second level.
Above-mentioned ridge waveguide is divided into three parts, and wide minute two-stage side direction of ridge reduces.
The utility model not only has simple and reliable process, the characteristics that device yield is high, and also at the bottom of its polarization sensitivity, far-field characteristic is good, can obtain the far-field spot of sub-circular, has high coupling efficiency and the tolerance that is coupled and aligned with waveguide or optical fiber.The utility model can be widely used in optical-fiber network, photon is integrated and photoelectron is integrated.
Description of drawings
Fig. 1 is the structural representation of polarization irrelevant image intensifer of the present invention (SSC-SOA);
Fig. 2 be optical fiber on level, vertical direction with the offset distance of Best Coupling position and the relation of relative coupling loss;
Fig. 3 is the semiconductor optical amplifier far-field pattern of integrated modular spot converter;
Fig. 4 is under the 200mA electric current, the gain spectral of image intensifer;
Fig. 5 is the saturation characteristic of the polarization irrelevant image intensifer of integrated modular spot converter.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail with the example of 1.55 mum wavelengths.
As shown in Figure 1, the InP substrate 1; N type InP resilient coating 2; 1.05 the passive wave guide layer 3 of mum wavelength; The wide ridge waveguide 4 in the n type second level; Active area 5; Ridge waveguide 6, it is shaped as taper.The same with the normal light amplifier, the top of above-mentioned device and bottom also are provided with electrode, and material is Ti/Pt/Au, does not mark in the accompanying drawings.Active area adopts tensile strain body material structure, and material is InGaAsP, thickness 0.12 μ m, and the tensile strain amount is-0.12%; Adopt the ripe at present heterostructure of restriction respectively (SCH); It is the InGaAsP matching materials of 1.28 μ m that last lower waveguide layer all adopts wavelength, and thickness is 0.1 μ m; Substrate is a n type InP material.The integrated device that we make adopts ridge side direction tapered transmission line structure, epitaxy technique is once finished, similar and the conventional ridge waveguide structure devices of manufacture craft, the benefit of this structure is can not corrode active area when making the tapered transmission line structure, and because we have produced ridge waveguide polarization irrelevant semiconductor optical amplifier, therefore can reduce technology difficulty and help keeping the consistency and the reliability of technology, device architecture as shown in Figure 1.The taper of ridge waveguide 6 can be made of one, two or three parts, as long as the ridge waveguide of this pyramidal structure can reduce the far field beam angle of divergence, and obtain a sub-circular hot spot, its far field is got final product with optical fiber far field coupling as far as possible, can improve the coupling efficiency and coupling tolerance of semiconductor optical amplifier and optical fiber like this.According to this requirement, persons skilled in the art can specifically be calculated the size of taper according to several different methods, as three-dimensional BMP method or FEM method.Structure with three parts is that example is specified below, shown in Fig. 1 .2, and the top ridge waveguide, its width W forms pyramidal structure from the wide progressively side direction of 2.8 μ m, waveguide tip width We is 0.6 μ m, and entire top taper ridge waveguide comprises three parts, as L among Fig. 1
1, L
2And L
Tip(get L
1=80 μ m, L
2=300 μ m, L
Tip=100 μ m); Along with the ridge waveguide width reduces gradually, it is the passive wave guide layer 3 of 1.05 μ m that light field will be squeezed out progressively that active area 5 enters the wide ridge waveguide 4 in the second level and be coupled into thick, the wavelength of below 0.05 μ m, this ducting layer is positioned at 2 μ m places, active area below, and the lateral limitation of light field is provided for the wide ridge waveguide 4 in the second level of 7 μ m by width.
1.55 the concrete process implementing process of the polarization irrelevant strained quantum well semiconductor optical amplifier of mum wavelength ridge waveguide structure integrated modular spot converter is as described below.
(1) substrate surface cleans: the oxide of substrate surface and impurity all have a significant impact the adhesive force of the compound semiconductor film prepared and the performances such as uniformity of film, so carry out at first wanting before the growth of MOCVD material the strict substrate surface cleaning of cleaning at different substrates and different.As use the InP substrate, adopt the mixed solution (H of the concentrated sulfuric acid, deionized water and hydrogen peroxide
2SO
4: H
2O: H
2O
2=3: 1: 1) after the cleaning, rinsed with deionized water dries up with nitrogen gun then, and is standby.
(2) MOCVD material growth: the equipment of material growth usefulness is the D-180 type low pressure metal organic chemistry vapour phase epitaxy equipment (LP-MOVPE) that EMCORE company produces, have REALTEMP real time temperature supervising device and unique TURBODISC technology, be loaded with pallet high speed rotating large-area uniformity in reaction chamber of substrate slice during growth to guarantee that material is grown.The III clan source of growth usefulness is trimethyl indium (TMIn) and trimethyl gallium (TMGa), and group V source is arsine (AsH
3) and phosphine (PH
3), carrier gas is the hydrogen after the palladium tube diffusion.In order to obtain high-quality strained quantum well structure, the MOVPE material growth parameter(s) that needs a cover to optimize is as the flow of V/III ratio, growth temperature, reaction chamber pressure, growth rate and each provenance etc.The MOCVD growth parameter(s) of table 1 for optimizing.The material growth is once finished by MOVPE material growth technique, the growth order as shown in Figure 1, be followed successively by: the thick n-InP resilient coating of 1 μ m of on 2 inches n type InP substrate, growing earlier, the 1.05 mum wavelength n type InGaAsP passive wave guides that the 0.05 μ m that grows then is thick, the thick n type of 2 μ m InP, active area, 1.5 μ m thick p type InP and the thick and heavy p type of 0.3 μ m doping InGaAs contact layer.
The table 1 MOCVD main technologic parameters of growing
The growth parameter(s) optimal value
Reaction chamber pressure (P) 70Torr
610 ℃ of growth temperatures (T)
V/III is than＞200
Growth rate (R) 0.24nm/s
MIn:17 ℃ of III clan source temperature T/TMGa:-10 ℃/TMAl:0 ℃
(3) die making: after the growth of MOCVD material finishes, after the growth of MOCVD material finishes, adopt technologies such as photoetching, etching, sputter, alloy to make ridge waveguide semiconductor optical amplifier structure and electrode, the method that combines with dry etching and wet etching erodes away the side direction tapered transmission line structure at top and following wide ridge structure.The wide employing of ridge from 2.8 μ m branch two-stages progressively the side direction taper be reduced to 0.6 μ m, total chamber length is 1610 μ m (wherein, each 480 μ m of two ends tapered transmission line district, the wide even ridge waveguide of middle 2.8 μ m district is 650 μ m).
(4) semiconductor optical amplifier chamber face anti-reflection (AR) membrane process: at device end face evaporation TiO
2/ SiO
2Two-layer anti-anti-film is that employing residual reflectance real time monitoring apparatus guarantees that final image intensifer chamber face residual reflectance is below 0.02% in the technical process.
After die making finishes, do not carry out earlier chamber face antireflective film coating film treatment, powering up the back tube core will work in the laser mode, because we make the main purpose of integrated device is to improve the coupling efficiency and the alignment tolerance of tube core and optical fiber, so testing us under the laser mode thinks more and can represent its coupled characteristic, adopt the tack standard single-mode fiber (SMF) of 9 μ m core diameters, fiber end face plates anti-reflection (AR) film and handles, to suppress the feedback of optical fiber tack end face and device end face; Optical fiber is fixed on M﹠amp; On the accurate multidimensional micromotion platform automatically of G nanoscale, the moving of platform by computer control.Obtain the image intensifer component pipe core of integrated modular spot converter and the coupling loss of tack monomode fiber after tested and be about 2.6dB; Usually, the coupling loss of the semiconductor laser of integrated modular spot converter or amplifier and tack monomode fiber is not 8.5dB～10dB, and as seen, behind the integrated modular spot converter, the coupling efficiency of device and optical fiber is greatly improved.Can record simultaneously, the tolerance that is coupled and aligned of side direction is horizontal direction ± 2.3 μ m, vertical direction ± 1.6 μ m, and test result is seen Fig. 2, (curve a represents horizontal direction among Fig. 2, and curve b represents vertical direction).Designing and producing the spot-size converter purpose is also to make the far-field spot of device for circular as far as possible for the angle of divergence that reduces the beam divergence angle of semiconductor optical amplifier, especially vertical direction; The LD8900R type far field tester that uses U.S. PHOTON company to produce is tested the far-field characteristic of the integrated modular spot converter spare of making; Keeping the device working temperature is 25 ℃, drive current 120mA, and test result is (curve c represents horizontal direction among Fig. 3 .1, and curve d represents vertical direction among Fig. 3 .2) as shown in Figure 3.In the far-field pattern, the half-peak breadth of curve (FWHM) is the size of far-field divergence angle, as can see from Figure 3, the far-field divergence angle of the image intensifer of integrated spot-size converter only is 12 ° * 15 °, spot pattern is near circular, this will cause the coupling efficiency of device and optical fiber greatly to improve, and enlarge markedly the tolerance that is coupled and aligned, and this result is confirmed from our coupled characteristic experiment.
At device end face evaporation TiO
2/ SiO
2Two-layer anti-anti-film is that employing residual reflectance real time monitoring apparatus guarantees that final image intensifer chamber face residual reflectance is below 0.02% in the technical process.The gain characteristic of test component, polarization correlated and saturation characteristic.Fig. 4 is under 150mA and the 200mA electric current, and the gain spectral of image intensifer in the test, keeps input optical signal power to be-25dBm; As we can see from the figure, at 1.54 mum wavelength places, under the 200mA electric current, the gain of image intensifer tube core is about 25.5dB, simultaneously, in the whole wave-length coverage (the polarization degree of correlation of the gain of 1510nm～1590nm) remains at below the 0.5dB, this explanation, and the semiconductor optical amplifier of integrated modular spot converter has possessed polarization independence; In image intensifer, signal gain is the function of input signal light power, under high input optical power situation, because the gain saturation effect can make gain reduce, therefore power output can be subjected to the restriction of this saturation effect, needing under the situation of high-power operation, as rearmounted power amplifier, multichannel amplifier the time, the gain saturation characteristic of signal is just very important.For semiconductor optical amplifier, always wish to have high as far as possible saturation output power, when gain saturation is discussed, consider the incident light wavelength consistent wavelength corresponding with peak gain, choosing the incoming signal optical wavelength is 1540nm, when drive current is 150mA and 200mA, constantly changes the incident optical power value respectively, measure the relation curve between output gain signal and the power output, as shown in Figure 5.Usually, saturation output power P
SatThe power output of pairing image intensifer when being defined as signal gain from its saturation value decline 3dB.From figure, we as can be seen, the saturation output power of this sample is 11.2dBm.
Claims (2)
1, a kind of ridge waveguide polarization irrelevant semiconductor optical amplifier, comprise InP substrate, n type InP resilient coating, passive wave guide layer, active area, ridge waveguide successively, its top layer and low layer are provided with electrode, it is characterized in that: between passive wave guide layer (3) and active area (5), be provided with the wide ridge waveguide in the second level (4), described ridge waveguide (6) is the side direction pyramidal structure, makes far field beam and optical fiber far field coupling jointly with the wide ridge waveguide in the second level (4).
2, semiconductor optical amplifier according to claim 1 is characterized in that: described ridge waveguide (6) is divided into three parts, and wide minute two-stage side direction of ridge reduces.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420017634 CN2689539Y (en) | 2004-04-02 | 2004-04-02 | Ridged waveguiding polarized non-related semiconductor optical amplifiers |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420017634 CN2689539Y (en) | 2004-04-02 | 2004-04-02 | Ridged waveguiding polarized non-related semiconductor optical amplifiers |
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| CN2689539Y true CN2689539Y (en) | 2005-03-30 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102159975B (en) * | 2008-09-17 | 2015-05-20 | 英特尔公司 | Method and apparatus for efficient coupling between silicon photonic chip and optical fiber |
| CN104836118A (en) * | 2013-10-18 | 2015-08-12 | 天空激光二极管有限公司 | Gallium and nitrogen containing laser device having confinement region |
| CN110088995A (en) * | 2016-12-19 | 2019-08-02 | 古河电气工业株式会社 | Optical integrating element and optical transmitter module |
| US10439364B2 (en) | 2013-10-18 | 2019-10-08 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on c-plane gallium and nitrogen material |
| CN112310812A (en) * | 2020-09-16 | 2021-02-02 | 厦门市三安集成电路有限公司 | Laser structure, manufacturing method and silicon-based hybrid module |
| CN113093333A (en) * | 2021-04-23 | 2021-07-09 | 南京刻得不错光电科技有限公司 | Spot size converter and photonic device |
| CN113167873A (en) * | 2019-02-08 | 2021-07-23 | 卢米诺有限责任公司 | Laser radar system with semiconductor optical amplifier |
| US11658456B2 (en) | 2014-02-10 | 2023-05-23 | Kyocera Sld Laser, Inc. | Manufacturable multi-emitter laser diode |
| US11710944B2 (en) | 2014-02-10 | 2023-07-25 | Kyocera Sld Laser, Inc. | Manufacturable RGB laser diode source and system |
-
2004
- 2004-04-02 CN CN 200420017634 patent/CN2689539Y/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102159975B (en) * | 2008-09-17 | 2015-05-20 | 英特尔公司 | Method and apparatus for efficient coupling between silicon photonic chip and optical fiber |
| CN104836118A (en) * | 2013-10-18 | 2015-08-12 | 天空激光二极管有限公司 | Gallium and nitrogen containing laser device having confinement region |
| US10439364B2 (en) | 2013-10-18 | 2019-10-08 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on c-plane gallium and nitrogen material |
| US11658456B2 (en) | 2014-02-10 | 2023-05-23 | Kyocera Sld Laser, Inc. | Manufacturable multi-emitter laser diode |
| US11710944B2 (en) | 2014-02-10 | 2023-07-25 | Kyocera Sld Laser, Inc. | Manufacturable RGB laser diode source and system |
| CN110088995A (en) * | 2016-12-19 | 2019-08-02 | 古河电气工业株式会社 | Optical integrating element and optical transmitter module |
| US11002909B2 (en) | 2016-12-19 | 2021-05-11 | Furukawa Electric Co,. Ltd. | Optical integrated device and optical transmitter module |
| CN113167873A (en) * | 2019-02-08 | 2021-07-23 | 卢米诺有限责任公司 | Laser radar system with semiconductor optical amplifier |
| CN113167873B (en) * | 2019-02-08 | 2022-09-13 | 卢米诺有限责任公司 | Laser radar system with semiconductor optical amplifier |
| CN112310812A (en) * | 2020-09-16 | 2021-02-02 | 厦门市三安集成电路有限公司 | Laser structure, manufacturing method and silicon-based hybrid module |
| CN113093333A (en) * | 2021-04-23 | 2021-07-09 | 南京刻得不错光电科技有限公司 | Spot size converter and photonic device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20140402 Granted publication date: 20050330 |