CN220358096U - Thin barrier layer GaN-based HEMT device - Google Patents
Thin barrier layer GaN-based HEMT device Download PDFInfo
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- CN220358096U CN220358096U CN202320408597.8U CN202320408597U CN220358096U CN 220358096 U CN220358096 U CN 220358096U CN 202320408597 U CN202320408597 U CN 202320408597U CN 220358096 U CN220358096 U CN 220358096U
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- 230000004888 barrier function Effects 0.000 title claims abstract description 41
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 5
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Abstract
The utility model discloses a thin barrier layer GaN-based HEMT device, which comprises: a thin barrier layer GaN-based HEMT comprising a sapphire substrate, a 3 μm GaN buffer layer, a 35nm GaN channel layer, an AlGaN barrier layer, and 40nm Si 3 N 4 Passivation layer, source electrode, grid electrode and drain electrode, and a layer of Al is deposited around the grid electrode 2 O 3 The dielectric layer serves to reduce gate leakage current. Simulating a thin barrier layer GaN-based HEMT device by utilizing silvaco TCAD, and adjusting AlGaN barrier layerThe thickness and the Al component content in the AlGaN barrier layer regulate and control the threshold voltage of the device, so that the device obtains better performance, thereby achieving the aim of optimizing the structure of the device. The thickness of the AlGaN barrier layer of the optimized device is only 5nm, and the Al component content is set to be 0.14 mol. The device achieves a maximum drain saturation current of 750mA/mm with a threshold voltage of 0.5V.
Description
Technical Field
The utility model relates to the field of semiconductor devices, in particular to a GaN-based HEMT device with a thin barrier layer.
Background
The GaN semiconductor material has a series of excellent characteristics such as wide forbidden bandwidth, high breakdown electric field, high voltage resistance, high saturated electron velocity, high temperature resistance, good irradiation resistance and the like, so the GaN material is the optimal material for preparing high-frequency, high-temperature, high-power and irradiation-resistant electronic elements. Due to spontaneous polarization and piezoelectric polarization between AlGaN and GaN, a large amount of two-dimensional electron gas (2 DEG) with high mobility is generated on the GaN side. The working principle of the AlGaN/GaN-based HEMT device is that a main conductive channel between grid and drain is provided by two-dimensional electron gas, and the thickness of a depletion layer is changed by applying bias voltage to a Schottky gate on an AlGaN barrier layer, so that the concentration of the channel two-dimensional electron gas and the working state of the device are controlled. Due to the strong polarization effect of GaN materials, 2DEG can be generated even if undoped in AlGaN/GaN heterojunction, so that devices obtained by common processes belong to depletion type devices. Since the conventional GaN device is a normally-on device, when the gate bias is not applied, the drain will have a current passing through it, and in order to suppress the drain current, a negative voltage needs to be applied to the gate, and if the gate cannot be controlled, the current will always flow, which will cause the device to burn out. Therefore, in order to safely operate a GaN power electronic device, it must be ensured that the same normal turn-off as a normal silicon device is achieved in the practical application process, that is, when the gate voltage is zero, no current is generated in the drain. Therefore, research on realizing a normally-off mode of the enhanced AlGaN/GaN HEMT device is paid attention to.
Disclosure of Invention
The utility model provides a thin barrier layer GaN-based HEMT device, and aims to improve the problems.
In order to achieve the above object, a thin barrier layer GaN-based HEMT device includes, in order from bottom to top: sapphire substrate, 3 μm GaN buffer layer, 35nmGAN channel layer, alGaN barrier layer, 40nmSi 3 N 4 Passivation layer, source electrode, grid electrode and drain electrode, and a layer of Al is deposited around the grid electrode 2 O 3 The dielectric layer serves to prevent gate leakage current.
Further, the thickness of the AlGaN barrier layer is 5nm.
Further, the Al component content in the AlGaN barrier layer is 0.14 mol.
Further, the Al 2 O 3 The dielectric layer has a thickness of 1nm and serves to prevent gate leakage current.
Further, the grid source electrode distance L of the device gs Grid drain distance l=2μm gd Gate length l=14 μm g ＝4μm。
Drawings
Fig. 1 is a schematic structural diagram of a thin barrier layer GaN-based HEMT device;
FIG. 2 is a graph showing the transfer curves of different Al component contents;
FIG. 3 is a graph showing the transfer curves for different AlGaN barrier layer thicknesses;
FIG. 4 is 5nmAl 0.14 Ga 0.86 An output characteristic curve of the N barrier device;
1. sapphire substrate, 2.GaN buffer layer, 3.GaN channel layer, 4.AlGaN barrier layer, 5. Source electrode, 6. Drain electrode, 7. Gate electrode, 8.Al 2 O 3 Dielectric layer, 9.Si 3 N 4 And a passivation layer.
Detailed Description
The following description of the drawings provides further details of embodiments of the present utility model.
Referring to FIG. 1, the utility model provides a thin barrier layer GaN-based HEMT device, which comprises a sapphire substrate, a 3 μm GaN buffer layer, a 35nmGAN channel layer, an AlGaN barrier layer, and 40nmSi 3 N 4 Passivation layer, source electrode, grid electrode and drain electrode, and a layer of Al is deposited around the grid electrode 2 O 3 A dielectric layer for preventing gate leakage current;
the AlGaN barrier layer of the device has the thickness of 5nm, the Al component content in the AlGaN barrier layer is 0.14 mol, and Al 2 O 3 The dielectric layer has a thickness of 1nm, and plays a role in preventing gate leakage current,grid source distance L gs Grid drain distance l=2μm gd Gate length l=14 μm g ＝4μm；
Referring to FIG. 2, FIG. 2 shows the AlGaN barrier layer with a thickness of 5nm and V d As can be taken from fig. 2, the threshold voltage decreases with increasing Al composition, because the Al composition increases, the 2DEG concentration of the channel increases, and the threshold voltage decreases; when the Al component is 0.14 and 0.20 respectively, the threshold voltage is 0.5V and 0.34V respectively, and when the content of the Al component is 0.14 mol, the threshold voltage is 0.5V, so that the enhanced HEMT device is realized.
Referring to FIG. 3, FIG. 3 shows that the Al content is 0.14 and V d As can be seen from fig. 4, as the AlGaN barrier layer thickness increases, the threshold voltage decreases because the AlGaN barrier layer thickness increases, the 2DEG concentration of the channel increases, and the threshold voltage decreases; when the thickness of the AlGaN barrier layer is 5nm and 20nm respectively, the threshold voltage is 0.5V and-0.6V correspondingly, and when the thickness of the AlGaN barrier layer is 5nm, the threshold voltage is 0.5V, so that the enhanced HEMT device is realized.
FIG. 4 is a graph of output characteristics obtained after applying voltages of 0V,2V, and 4V to the gate, respectively, at V g With 4V, the maximum drain saturation current at 5nm for the barrier layer is about 750mA/mm.
The utility model provides a thin barrier layer GaN-based HEMT device, which can realize an enhanced HEMT, and realize a threshold voltage of 0.5V and a maximum drain saturation current of 750mA/mm.
Claims (5)
1. A thin barrier layer GaN-based HEMT device, the device comprising: the Bao Shilei-layer GaN-based HEMT comprises a thin barrier layer enhanced GaN-based HEMT, and the thin barrier layer enhanced GaN-based HEMT comprises a sapphire substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and Si 3 N 4 Passivation layer, source electrode, grid electrode and drain electrode, and a layer of Al is deposited around the grid electrode 2 O 3 The dielectric layer serves to reduce gate leakage current.
2. The thin barrier GaN based HEMT device of claim 1, wherein said AlGaN barrier layer is 5nm thick.
3. The thin barrier GaN based HEMT device of claim 1, wherein the AlGaN barrier layer has an Al composition content of 0.14 mol.
4. The thin barrier layer GaN-based HEMT device of claim 1, wherein the Al 2 O 3 The dielectric layer thickness was 1nm.
5. The thin barrier GaN-based HEMT device of claim 1, wherein the device has a gate-source distance L gs Grid drain distance l=2μm gd Gate length l=14 μm g ＝4μm。
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| Application Number | Priority Date | Filing Date | Title |
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| CN202320408597.8U CN220358096U (en) | 2023-03-02 | 2023-03-02 | Thin barrier layer GaN-based HEMT device |
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| CN202320408597.8U CN220358096U (en) | 2023-03-02 | 2023-03-02 | Thin barrier layer GaN-based HEMT device |
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- 2023-03-02 CN CN202320408597.8U patent/CN220358096U/en active Active
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