CN220188709U - Program-controlled attenuation millimeter wave receiving and transmitting front end assembly - Google Patents
Program-controlled attenuation millimeter wave receiving and transmitting front end assembly Download PDFInfo
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Abstract
The utility model discloses a program-controlled attenuation millimeter wave receiving and transmitting front-end component, which is characterized in that an X-wave band signal is generated through a phase-locked source, a Ka-wave band signal is generated through frequency multiplication of a quadruplex after being amplified by a driving amplifier, and then the Ka-wave band signal is filtered through a band-pass filter, and is amplified by a first low-noise amplifier and then subjected to two paths of power division; the power-distributed signal is amplified by a second low-noise amplifier and then used as a local oscillator, the radio frequency input signal amplified by a fourth low-noise amplifier is mixed by a first mixer to generate an intermediate frequency signal, the intermediate frequency signal is amplified by a fifth low-noise amplifier, the attenuation amounts of the two attenuators are controlled by a singlechip, and the size of the intermediate frequency output signal is adjusted; the other path of signal after power distribution is amplified by a third low noise amplifier and then used as a local oscillator, and the intermediate frequency input signal amplified by a sixth low noise amplifier after being attenuated by the two attenuators controlled by the singlechip is mixed by a second mixer to generate a radio frequency output signal, and the radio frequency output signal is amplified and then output.
Description
Technical Field
The utility model belongs to the technical field of signal receiving and transmitting equipment, and particularly relates to a program-controlled attenuation millimeter wave receiving and transmitting front-end component.
Background
Radar, a transliteration of english, means radio detection and ranging. The radar has the basic function of detecting the object of interest and measuring the state parameters such as the distance, direction, speed and the like of the related object. The structure and use of the various radars are not identical, but the basic form is the same. The device consists of a transmitter, a transmitting antenna, a receiver, a receiving antenna, signal processing, a display, a power supply and the like. The radar has the advantages that the radar can detect long-distance targets in the daytime and at night, is not shielded by fog, cloud and rain, has the characteristics of all weather and all the time, and has certain penetrating capacity.
The millimeter wave receiving and transmitting front-end component is taken as a high-end subsystem and is an important component of a radar, navigation, electronic warfare and communication system. The program-controlled attenuation is a circuit which introduces a certain attenuation in a specified range. The application range of program-controlled attenuation is wide, such as controlling the power level, controlling the local oscillation output power in the microwave superheterodyne receiver to obtain the required noise coefficient and frequency conversion loss, achieving the expected receiving effect, and the device can also be used as a decoupling unit and a jump attenuator in radar interference, does not introduce attenuation at ordinary times, and suddenly increases the attenuation when encountering external interference.
The existing millimeter wave receiving and transmitting front-end component with the same function has the problems of large volume, heavy weight, high cost, large attenuation stepping amount, small attenuation control amount and the like.
Disclosure of Invention
The utility model aims to overcome the defects of the prior art and provides a program-controlled attenuation millimeter wave transceiver front-end component.
In order to solve the technical problems, the utility model adopts the following technology: the output end of the phase-locked source is connected with the driving amplifier, the output end of the driving amplifier is connected with the quadruple frequency amplifier, the output end of the quadruple frequency amplifier is connected with the first low noise amplifier, the output end of the first low noise amplifier is respectively connected with the second low noise amplifier and the third low noise amplifier, the input end of the first mixer is respectively connected with the second low noise amplifier and the fourth low noise amplifier, the input end of the fourth low noise amplifier is used for external radio frequency input, the output end of the first mixer is connected with the fifth low noise amplifier, and the output end of the fifth low noise amplifier is sequentially connected with the output end of the second low noise amplifier; the input end of the second mixer is respectively connected with a third low noise amplifier and a sixth low noise amplifier, the input end of the sixth low noise amplifier is sequentially connected with a third attenuator and a fourth attenuator in series, the input end of the fourth attenuator is used for external intermediate frequency input, the output end of the second mixer is connected with a middle power amplifier, the output end of the middle power amplifier is connected with a high power amplifier, the output end of the high power amplifier is used for radio frequency output, and the singlechip is respectively connected with the first attenuator, the second attenuator, the third attenuator and the fourth attenuator.
Preferably, a band-pass filter is further connected between the quad-frequency amplifier and the first low noise amplifier.
Preferably, the phase-locked source is an X-band frequency synthesizer, the phase-locked source selects a TFS14-15 frequency synthesizer, the output frequency is 200MHz-15GHz, and the size is 38mm X10 mm; the driving amplifier is an HMC451 medium power amplifier, the working frequency range is 5-20 GHz, the gain of 22dB is provided, the saturated power is +22dBm, the power supply voltage is 5V, and the size is 1.35mm multiplied by 0.1mm; the quad-frequency device is an MWX010 quad-frequency device, and the MWX010 quad-frequency device multiplies the X-band signal to the Ka-band signal.
Preferably, the first low noise amplifier, the second low noise amplifier, the third low noise amplifier and the fourth low noise amplifier are all MWL021 low noise amplifiers, the working frequency is 18-40 GHz, and a small signal gain of 22dB is provided; the fifth low noise amplifier and the sixth low noise amplifier are both PMA2-123LN+ low noise amplifier, the PMA2-123LN+ low noise amplifier amplifies signals within the frequency range of 500 MHz-12 GHz, the gain is 7.6dB, and the noise is 2.4dB.
Preferably, the first mixer and the second mixer are both HMC329 double balanced mixers, and the HMC329 double balanced mixers are used as frequency up-converters or frequency down-converters in the frequency range of 22GHz to 38 GHz.
Preferably, the first attenuator, the second attenuator, the third attenuator and the fourth attenuator are all ADRF5730 digital attenuators, the ADRF5730 digital attenuators provide an attenuation control range of 31.5dB at a step length of 0.5dB, the working frequency is 100 MHz-40 GHz, the singlechip controls the first attenuator, the second attenuator, the third attenuator and the fourth attenuator to respectively attenuate 31.5dB signals, and the first attenuator is connected in series with the second attenuator, and the third attenuator is connected in series with the fourth attenuator to respectively realize 63dB signal attenuation.
Preferably, the singlechip is an STM32F103RCT6 singlechip, and the STM32F103RCT6 singlechip performs 16-bit stepping control to respectively control the 8-bit attenuation of intermediate frequency output and the 8-bit attenuation of external intermediate frequency input.
Preferably, the middle power amplifier is a middle power amplifier in the MWG101, and the high power amplifier is a TGA4516 high power amplifier.
Preferably, the device also comprises a main cavity, a cavity front cover plate, a cavity rear cover plate, a first carrier, a second carrier, a third carrier, a fourth carrier, a first cover plate, a second cover plate, a third cover plate, a fourth cover plate, a fifth cover plate, a sixth cover plate and a printed board, wherein the first carrier is provided with a first low noise amplifier, a second low noise amplifier, a third low noise amplifier, a first mixer, a fourth low noise amplifier, a fifth low noise amplifier, a first attenuator and a second attenuator in a pasting manner, the second carrier is provided with a driving amplifier and a quadruple frequency amplifier in a pasting manner, the third carrier is provided with a second mixer and a sixth low noise amplifier in a pasting manner, the fourth carrier is provided with a medium power amplifier and a high power amplifier in a pasting manner, the printed board is provided with a third attenuator, a fourth attenuator and a singlechip in a pasting manner, the phase-locked source, the first carrier, the second carrier, the third carrier, the fourth carrier and the band-pass filter are fixed on the front end face of the main cavity, the phase-locked source is fixed on the right upper side of the front end face of the main cavity, the band-pass filter is fixed on the middle part of the left side of the front end face of the main cavity, the first cover plate is arranged on the lower side of the front end face of the first carrier in a covering mode, the second cover plate is arranged on the upper side of the front end face of the first carrier, the third cover plate is arranged on the front end face of the third carrier in a covering mode, the fourth cover plate is arranged on the upper side of the front end face of the fourth carrier in a covering mode, the fifth cover plate is arranged on the lower side of the front end face of the fourth carrier in a covering mode, the sixth cover plate is arranged on the front end face of the second carrier in a covering mode, the printed board is fixed on the rear end face of the main cavity, the first cover plate, the second cover plate, the third cover plate, the fourth cover plate and the sixth cover plate are fixed on the rear end face of the main cavity, and the printed board are pressed.
Preferably, the first carrier is of a different structure, a hollowed-out groove is formed in the middle of the first carrier to form an isolation part, and the first attenuator and the second attenuator are attached to the isolation part.
Compared with the prior art, the utility model has the advantages that:
(1) The utility model discloses a program-controlled attenuation millimeter wave receiving and transmitting front-end component, which is characterized in that an X-wave band signal is generated through a phase-locked source, a Ka-wave band signal is generated through frequency multiplication of a quadruplex after being amplified by a driving amplifier, and then the Ka-wave band signal is filtered through a band-pass filter, and is amplified by a first low-noise amplifier and then subjected to two paths of power division; the power-distributed signal is amplified by a second low-noise amplifier and then used as a local oscillator, the radio frequency input signal amplified by a fourth low-noise amplifier is mixed by a first mixer to generate an intermediate frequency signal, the intermediate frequency signal is amplified by a fifth low-noise amplifier, the attenuation amounts of the two attenuators are controlled by a singlechip, and the size of the intermediate frequency output signal is adjusted; the other path of signal after power distribution is amplified by a third low noise amplifier and then used as a local oscillator, and the intermediate frequency input signal amplified by a sixth low noise amplifier is mixed by a second mixer after being attenuated by a singlechip, so as to generate a radio frequency output signal, and the intermediate power amplifier and the high power amplifier amplify the radio frequency output and output the radio frequency output;
(2) The program-controlled attenuation millimeter wave receiving and transmitting front end component comprises a main cavity, a cavity front cover plate, a cavity rear cover plate, a printed board, a carrier and a cover plate, wherein the components are respectively attached to the carrier and the printed board;
(3) The utility model respectively connects two attenuators in series, controls the attenuation by the singlechip, receives and transmits the receiving and transmitting components by the singlechip and simultaneously carries out power attenuation stepping, the attenuation stepping amount is 0.5dB, the attenuation stepping amount is small, the attenuation range is 0-63 dB, and the control amount is large.
Drawings
Fig. 1 is a schematic block diagram of a program-controlled attenuation millimeter wave transceiver front-end module according to the present utility model;
fig. 2 is a schematic diagram of each carrier structure of a program-controlled attenuation millimeter wave transceiver front-end module according to the present utility model;
fig. 3 is a schematic diagram of a printed board structure of a program-controlled attenuation millimeter wave transceiver front-end module according to the present utility model;
fig. 4 is a schematic structural diagram of a main cavity of a program-controlled attenuation millimeter wave transceiver front-end module according to the present utility model;
fig. 5 is a schematic structural diagram of a front cavity cover plate and a rear cavity cover plate of a program-controlled attenuation millimeter wave transceiver front end assembly according to the present utility model.
Reference numerals illustrate:
1. a phase-locked source, 2, a driving amplifier, 3, a quadruple frequency amplifier, 4, a band-pass filter, 5, a first low noise amplifier, 6, a second low noise amplifier, 7, a third low noise amplifier, 8, a first mixer, 9, a second mixer, 10, a fourth low noise amplifier, 11, a fifth low noise amplifier, 12, a sixth low noise amplifier, 13, a first attenuator, 14, a second attenuator, 15, a third attenuator, 16, a fourth attenuator, 17, a singlechip, 18, a medium power amplifier, 19, a high power amplifier;
101. the main cavity, 102, the cavity front cover plate, 103, the cavity rear cover plate, 104, the first carrier, 105, the second carrier, 106, the third carrier, 107, the fourth carrier, 108, the first cover plate, 109, the second cover plate, 1010, the third cover plate, 1011, the fourth cover plate, 1012, the fifth cover plate, 1013, the sixth cover plate, 1014, the printed board, 1041, and the isolation portion.
Detailed Description
The following describes specific embodiments of the present utility model with reference to examples:
it should be noted that the structures, proportions, sizes and the like illustrated in the present specification are used for being understood and read by those skilled in the art in combination with the disclosure of the present utility model, and are not intended to limit the applicable limitations of the present utility model, and any structural modifications, proportional changes or size adjustments should still fall within the scope of the disclosure of the present utility model without affecting the efficacy and achievement of the present utility model.
Example 1
As shown in fig. 1, the utility model discloses a program-controlled attenuation type millimeter wave transceiver front-end component, which comprises a phase-locked source 1, a driving amplifier 2, a quad amplifier 3, a first low noise amplifier 5, a second low noise amplifier 6, a third low noise amplifier 7, a first mixer 8, a second mixer 9, a fourth low noise amplifier 10, a fifth low noise amplifier 11, a sixth low noise amplifier 12, a first attenuator 13, a second attenuator 14, a third attenuator 15, a fourth attenuator 16, a singlechip 17, a middle power amplifier 18 and a high power amplifier 19, wherein the output end of the phase-locked source 1 is connected with the driving amplifier 2, the output end of the driving amplifier 2 is connected with the quad amplifier 3, the output end of the quad amplifier 3 is connected with the first low noise amplifier 5, the output end of the first low noise amplifier 5 is respectively connected with the second low noise amplifier 6 and the third low noise amplifier 7, the input end of the first mixer 8 is respectively connected with the second low noise amplifier 6 and the fourth low noise amplifier 10, the input end of the fourth low noise amplifier 14 is respectively connected with the input end of the second low noise amplifier 6 and the fourth low noise amplifier 10, the output end of the fifth low noise amplifier 14 is used for the output end of the fifth low noise amplifier 11 is connected with the output end of the fifth low noise amplifier 11 in series; the input end of the second mixer 9 is respectively connected with the third low noise amplifier 7 and the sixth low noise amplifier 12, the input end of the sixth low noise amplifier 12 is sequentially connected with the third attenuator 15 and the fourth attenuator 16 in series, the input end of the fourth attenuator 16 is used for external intermediate frequency input, the output end of the second mixer 9 is connected with the middle power amplifier 18, the output end of the middle power amplifier 18 is connected with the high power amplifier 19, the output end of the high power amplifier 19 is used for radio frequency output, and the singlechip 17 is respectively connected with the first attenuator 13, the second attenuator 14, the third attenuator 15 and the fourth attenuator 16.
Example 2
As shown in fig. 1, a bandpass filter 4 is preferably further connected between the quad-band 3 and the first low noise amplifier 5.
Preferably, the phase-locked source 1 is an X-band frequency synthesizer, the phase-locked source 1 selects a TFS14-15 frequency synthesizer, the output frequency is 200MHz-15GHz, and the size is 38mm X10 mm; the driving amplifier 2 is an HMC451 medium power amplifier, the working frequency range is 5-20 GHz, the 22dB gain is provided, the saturated power is +22dBm, the power supply voltage is 5V, and the size is 1.35mm multiplied by 0.1mm; the quad-band 3 is an MWX010 quad-band, and the MWX010 quad-band multiplies the X-band signal to the Ka-band signal.
Example 3
As shown in fig. 1, preferably, the first low noise amplifier 5, the second low noise amplifier 6, the third low noise amplifier 7 and the fourth low noise amplifier 10 are all MWL021 low noise amplifiers, the working frequency is 18-40 GHz, and a small signal gain of 22dB is provided; the fifth low noise amplifier 11 and the sixth low noise amplifier 12 are both PMA2-123ln+ low noise amplifiers, and the PMA2-123ln+ low noise amplifiers amplify signals in the frequency range of 500 MHz-12 GHz, the gain is 7.6dB, and the noise is 2.4dB.
Preferably, the first mixer 8 and the second mixer 9 are HMC329 double balanced mixers, and the HMC329 double balanced mixers are used as frequency up-converters or frequency down-converters in the frequency range of 22GHz to 38 GHz.
Example 4
As shown in fig. 1, preferably, the first attenuator 13, the second attenuator 14, the third attenuator 15 and the fourth attenuator 16 are all ADRF5730 digital attenuators, the ADRF5730 digital attenuators provide an attenuation control range of 31.5dB in 0.5dB step size, the working frequency is 100 MHz-40 GHz, the single chip 17 controls the first attenuator 13, the second attenuator 14, the third attenuator 15 and the fourth attenuator 16 to respectively attenuate 31.5dB signals, and the first attenuator 13 and the second attenuator 14 are connected in series, and the third attenuator 15 and the fourth attenuator 16 are connected in series to respectively realize 63dB signal attenuation.
Preferably, the singlechip 17 is an STM32F103RCT6 singlechip, and the STM32F103RCT6 singlechip performs 16-bit stepping control to respectively control the 8-bit attenuation of the intermediate frequency output and the 8-bit attenuation of the external intermediate frequency input.
Preferably, the middle power amplifier 18 is a middle power amplifier in the MWG101, and the high power amplifier 19 is a TGA4516 high power amplifier.
Example 5
As shown in fig. 2 to 5, the device further comprises a main cavity 101, a cavity front cover 102, a cavity back cover 103, a first carrier 104, a second carrier 105, a third carrier 106, a fourth carrier 107, a first cover 108, a second cover 109, a third cover 1010, a fourth cover 1011, a fifth cover 1012, a sixth cover 1013, and a printed board 1014, wherein the first carrier 104 is provided with a first low noise amplifier 5, a second low noise amplifier 6, a third low noise amplifier 7, a first mixer 8, a fourth low noise amplifier 10, a fifth low noise amplifier 11, a first attenuator 13, and a second attenuator 14, the second carrier 105 is provided with a driving amplifier 2 and a fourth frequency multiplier 3, the third carrier 106 is provided with a second mixer 9 and a sixth low noise amplifier 12, the fourth carrier 107 is provided with a medium power amplifier 18 and a high power amplifier 19, the third attenuator 15, the fourth attenuator 16 and the single chip microcomputer 17 are attached to the printed board 1014, the phase-locked source 1, the first carrier 104, the second carrier 105, the third carrier 106, the fourth carrier 107 and the band-pass filter 4 are fixed to the front end face of the main cavity 101, the phase-locked source 1 is fixed to the right upper side of the front end face of the main cavity 101, the band-pass filter 4 is fixed to the middle part of the left side of the front end face of the main cavity 101, the first cover plate 108 is covered on the lower side of the front end face of the first carrier 104, the second cover plate 109 is covered on the upper side of the front end face of the first carrier 104, the third cover plate 1010 is covered on the front end face of the third carrier 106, the fourth cover plate 1011 is covered on the upper side of the front end face of the fourth carrier 107, the fifth cover plate 1012 is covered on the lower side of the front end face of the fourth carrier 107, the sixth cover plate 1013 is covered on the front end face of the second carrier 105, the printed board 1014 is fixed to the rear end face of the main cavity 101, and the front cover plate 102 is fixed to the front end face of the main cavity 101 and compresses the first cover plate 108, the second cover plate 109, the third cover plate 1010, the fourth cover plate 1011, the fifth cover plate 1012 and the sixth cover plate 1013, and the cavity back cover plate 103 is fixed to the back end surface of the main cavity 101 and presses the printed board 1014.
As shown in fig. 2, preferably, the first carrier 104 has a heterogeneous structure, a hollow groove is formed in the middle of the first carrier 104 to form an isolation portion 1041, and the first attenuator 13 and the second attenuator 14 are attached to the isolation portion 1041.
The working principle of the utility model is as follows:
as shown in fig. 1, the utility model discloses a program-controlled attenuation millimeter wave transceiver front-end component, which comprises a phase-locked source 1, a driving amplifier 2, a quad-frequency amplifier 3, a band-pass filter 4, a first low-noise amplifier 5, a second low-noise amplifier 6, a third low-noise amplifier 7, a first mixer 8, a second mixer 9, a fourth low-noise amplifier 10, a fifth low-noise amplifier 11, a sixth low-noise amplifier 12, a first attenuator 13, a second attenuator 14, a third attenuator 15, a fourth attenuator 16, a singlechip 17, a middle-power amplifier 18 and a high-power amplifier 19, wherein the phase-locked source 1 generates an X-band signal, the driving amplifier 2 generates a Ka-band signal after being amplified by the quad-frequency amplifier 3, and then the Ka-band signal is filtered by the band-pass filter 4, amplified by the first low-noise amplifier 5 and then subjected to two-way power division; the power-distributed signal is amplified by a second low noise amplifier 6 and used as a local oscillator, the radio frequency input signal amplified by a fourth low noise amplifier 10 is mixed by a first mixer 8 to generate an intermediate frequency signal, the intermediate frequency signal is amplified by a fifth low noise amplifier 11, the attenuation of two attenuators (a first attenuator 13 and a second attenuator 14) is controlled by a singlechip 17, and the size of the intermediate frequency output signal is adjusted; the other path of signal after power distribution is amplified by a third low noise amplifier 7 and then used as a local oscillator, the intermediate frequency input signal amplified by a sixth low noise amplifier 12 after being attenuated by a singlechip 17 and then attenuated by two attenuators (a third attenuator 15 and a fourth attenuator 16) is mixed by a second mixer 9 to generate a radio frequency output signal, and a medium power amplifier 18 and a high power amplifier 19 amplify the radio frequency output and then output the radio frequency output signal.
1. Local oscillator
(1) Phase-locked source 1: the utility model uses the X-band frequency synthesizer as a phase-locking source to carry out phase locking, generates X-band signals with fixed frequency of 8GHz, and automatically tracks. The utility model selects a TFS14-15 frequency synthesizer with the output frequency of 200MHz-15GHz and the volume of 38mm is 10mm.
(2) The driving amplifier 2: the utility model needs to carry out frequency multiplication on the X-band signal, the power of the frequency signal generated by the frequency synthesizer is too small to drive the frequency multiplier to work, and the X-band signal needs to be driven and amplified, the utility model selects the HMC451 to carry out driving and amplifying, the HMC451 is a medium power amplifier, the working frequency range is 5-20 GHz, 22dB gain can be provided, the saturated power is +22dBm, and the power supply voltage is 5V. The device has consistent gain and output power in the whole working frequency band, the size is smaller by 1.35mm multiplied by 0.1mm, and the device can be easily integrated into a transceiver component of a multi-chip module by adopting single power supply to work and block I/O.
(3) Quad 3: the utility model adopts the quadrupler MWX010 to carry out quadruple frequency, and multiplies the frequency of the X-band signal to the Ka-band signal. MWX010 is an active quad of self-bias design, and can achieve a power output signal of +10dBm within the operating frequency band of 32-38 GHz when driven by an input signal of +10dBm.
(4) Band-pass filter 4: the millimeter wave phase-locked signal after frequency multiplication is filtered by the band-pass filter 4 and then sent out. The band-pass filter can pass signals with the center frequency of 23.5GHz and the bandwidth of 3GHz according to design requirements.
(5) The first low noise amplifier 5: the utility model selects the low noise amplifier MWL021 to amplify the signal, the MWL021 is a self-bias mode single power supply, and the low noise amplifier with high dynamic range. The operating frequency covers 18-40 GHz and provides a small signal gain of 22dB, with a typical noise figure of 3.8dB.
The Ka-band signal amplified by the low-noise amplifier can be subjected to power division through the micro-strip, and is respectively amplified and used as a local oscillator to be mixed with an input signal to obtain a corresponding output signal.
2. Intermediate frequency output
(1) The second low noise amplifier 6: after microstrip power division, millimeter wave signals are attenuated and the mixer cannot be excited to work. The utility model continues to select MWL021 to amplify the signal of the path after power division as local oscillation signal.
(2) Fourth low noise amplifier 10: when the radio frequency is input, the radio frequency input signal is too small to excite the mixer to work, and the MWL021 is adopted to amplify the radio frequency input signal.
(3) The first mixer 8: the utility model selects HMC329 to mix the local oscillation signal and the amplified radio frequency input signal, and obtains the intermediate frequency output signal by frequency conversion. The HMC329 chip is a generic double balanced mixer that can be used as an up-converter or down-converter in the frequency range of 22GHz to 38GHz in the chiplet area. This mixer does not require external components and matching circuitry.
(4) Fifth low noise amplifier 11: the intermediate frequency signal obtained after the frequency mixing of the mixer is too small to directly carry out program-controlled attenuation, and the low-noise amplifier PMA2-123LN+ is selected to amplify the intermediate frequency signal. PMA2-123LN+ is a universal low noise amplifier, which can amplify signals within the frequency range of 500 MHz-12 GHz, gain of 7.6dB and noise of 2.4dB.
(5) A first attenuator 13, a second attenuator 14: in the design of the utility model, program control is needed to carry out 60dB signal attenuation, 2 identical attenuators are selected to be connected in series in order to reduce the complexity of the program design, and the program control is carried out to carry out 31.5dB signal attenuation respectively, which is 63dB in total. The utility model selects an attenuator and selects ADRF5730.ADRF5730 is a digital attenuator providing 31.5dB attenuation control range in 0.5dB steps, operating frequencies of 100 MHz-40 GHz, providing insertion loss better than 4.8dB and excellent attenuation.
(6) Singlechip 17: : the attenuation of the attenuator is controlled by a singlechip program, the singlechip performs 16-bit program stepping control, and respectively controls the 8-bit attenuation of intermediate frequency output and the 8-bit attenuation of intermediate frequency input, and the singlechip selects STM32F103RCT6.
3. Radio frequency output
(1) Third low noise amplifier 7: after microstrip power division, millimeter wave signals are attenuated and the mixer cannot be excited to work. The utility model continues to select MWL021 to amplify the other path of signal after power division as local oscillation signal.
(2) The intermediate frequency input and the principle are opposite to the intermediate frequency output (4), (5) and (6), the signal transmission direction is opposite, the receiving and transmitting front end receives the intermediate frequency signal, and the intermediate frequency signal is amplified by the low noise amplifier and sent to the mixer for mixing after being attenuated by the serial attenuator controlled by the singlechip.
(3) The second mixer 9: the principle is the same as that of the intermediate frequency output 3, and the intermediate frequency signal after program-controlled attenuation and re-amplification is mixed with the local oscillation signal to generate a radio frequency output signal.
(4) Medium power amplifier 18: the power of the radio frequency output signal generated after frequency conversion is smaller, and the design of the utility model requires larger radio frequency output power. The utility model selects the medium power amplifier MWG101 to amplify the output signal, and then excites the high power amplifier to amplify again, thus obtaining the expected output signal power.
(5) High power amplifier 19: the radio frequency output signal amplified by the medium power amplifier still needs to be amplified by the high power amplifier to obtain the expected output power value, and the high power amplifier TGA4516 is selected.
The utility model discloses a program-controlled attenuation millimeter wave receiving and transmitting front-end component, which is characterized in that an X-wave band signal is generated through a phase-locked source, a Ka-wave band signal is generated through frequency multiplication of a quadruplex after being amplified by a driving amplifier, and then the Ka-wave band signal is filtered through a band-pass filter, and is amplified by a first low-noise amplifier and then subjected to two paths of power division; the power-distributed signal is amplified by a second low-noise amplifier and then used as a local oscillator, the radio frequency input signal amplified by a fourth low-noise amplifier is mixed by a first mixer to generate an intermediate frequency signal, the intermediate frequency signal is amplified by a fifth low-noise amplifier, the attenuation amounts of the two attenuators are controlled by a singlechip, and the size of the intermediate frequency output signal is adjusted; the other path of signal after power distribution is amplified by the third low noise amplifier and then used as a local oscillator, and the intermediate frequency input signal amplified by the sixth low noise amplifier is mixed by the second mixer after being attenuated by the singlechip, so as to generate a radio frequency output signal.
The program-controlled attenuation millimeter wave receiving and transmitting front end component comprises a main cavity, a cavity front cover plate, a cavity rear cover plate, a printed board, a carrier and a cover plate, wherein the components are respectively attached to the carrier and the printed board, the cavity front cover plate is fixed on the front end face of the main cavity and compresses the cover plates, and the cavity rear cover plate is fixed on the rear end face of the main cavity and compresses the printed board.
The utility model respectively connects two attenuators in series, controls the attenuation by the singlechip, receives and transmits the receiving and transmitting components by the singlechip and simultaneously carries out power attenuation stepping, the attenuation stepping amount is 0.5dB, the attenuation stepping amount is small, the attenuation range is 0-63 dB, and the control amount is large.
While the preferred embodiments of the present utility model have been described in detail, the present utility model is not limited to the above embodiments, and various changes may be made without departing from the spirit of the present utility model within the knowledge of those skilled in the art.
Many other changes and modifications may be made without departing from the spirit and scope of the utility model. It is to be understood that the utility model is not to be limited to the specific embodiments, but only by the scope of the appended claims.
Claims (10)
1. A program-controlled attenuation millimeter wave receiving and transmitting front end component is characterized in that: comprises a phase-locked source (1), a driving amplifier (2), a quad-band amplifier (3), a first low-noise amplifier (5), a second low-noise amplifier (6), a third low-noise amplifier (7), a first mixer (8), a second mixer (9), a fourth low-noise amplifier (10), a fifth low-noise amplifier (11), a sixth low-noise amplifier (12), a first attenuator (13), a second attenuator (14), a third attenuator (15), a fourth attenuator (16), a singlechip (17), a middle-power amplifier (18) and a high-power amplifier (19), wherein the output end of the phase-locked source (1) is connected with the driving amplifier (2), the output end of the driving amplifier (2) is connected with the quad-band amplifier (3), the output end of the quad-band amplifier (3) is connected with the first low-noise amplifier (5), the output end of the first low-noise amplifier (5) is respectively connected with the second low-noise amplifier (6) and the third low-noise amplifier (7), the output end of the first mixer (8) is respectively connected with the second low-noise amplifier (10) and the fourth low-noise amplifier (10) which are respectively connected with the output end of the fourth low-noise amplifier (10), the output end of the fifth low noise amplifier (11) is sequentially connected in series with a first attenuator (13) and a second attenuator (14), and the output end of the second attenuator (14) is used for intermediate frequency output; the input end of the second mixer (9) is respectively connected with a third low-noise amplifier (7) and a sixth low-noise amplifier (12), the input end of the sixth low-noise amplifier (12) is sequentially connected with a third attenuator (15) and a fourth attenuator (16) in series, the input end of the fourth attenuator (16) is used for external intermediate frequency input, the output end of the second mixer (9) is connected with a middle power amplifier (18), the output end of the middle power amplifier (18) is connected with a high power amplifier (19), the output end of the high power amplifier (19) is used for radio frequency output, and the singlechip (17) is respectively connected with the first attenuator (13), the second attenuator (14), the third attenuator (15) and the fourth attenuator (16).
2. The programmable attenuation millimeter wave transceiver front-end assembly of claim 1, wherein: a band-pass filter (4) is also connected between the quadrupler (3) and the first low noise amplifier (5).
3. The programmable attenuation millimeter wave transceiver front-end assembly of claim 1, wherein: the phase-locked source (1) is an X-band frequency synthesizer, the phase-locked source (1) selects a TFS14-15 frequency synthesizer, the output frequency is 200MHz-15GHz, and the size is 38mm X10 mm; the driving amplifier (2) is an HMC451 medium power amplifier, the working frequency range is 5-20 GHz, 22dB gain is provided, the saturated power is +22dBm, the power supply voltage is 5V, and the size is 1.35mm multiplied by 0.1mm; the quad-frequency device (3) is an MWX010 quad-frequency device, and the MWX010 quad-frequency device multiplies the X-band signal to the Ka-band signal.
4. The programmable attenuation millimeter wave transceiver front-end assembly of claim 1, wherein: the first low-noise amplifier (5), the second low-noise amplifier (6), the third low-noise amplifier (7) and the fourth low-noise amplifier (10) are MWL021 low-noise amplifiers, the working frequency is 18-40 GHz, and a small signal gain of 22dB is provided; the fifth low noise amplifier (11) and the sixth low noise amplifier (12) are PMA2-123LN+ low noise amplifiers, the PMA2-123LN+ low noise amplifiers amplify signals within the frequency range of 500 MHz-12 GHz, the gain is 7.6dB, and the noise is 2.4dB.
5. The programmable attenuation millimeter wave transceiver front-end assembly of claim 1, wherein: the first mixer (8) and the second mixer (9) are both HMC329 double-balanced mixers, and the HMC329 double-balanced mixers are used as frequency up-converters or frequency down-converters in the frequency range of 22 GHz-38 GHz.
6. The programmable attenuation millimeter wave transceiver front-end assembly of claim 1, wherein: the first attenuator (13), the second attenuator (14), the third attenuator (15) and the fourth attenuator (16) are all ADRF5730 digital attenuators, the ADRF5730 digital attenuators provide an attenuation control range of 31.5dB at a step length of 0.5dB, the working frequency is 100 MHz-40 GHz, the singlechip (17) controls the first attenuator (13), the second attenuator (14), the third attenuator (15) and the fourth attenuator (16) to respectively carry out 31.5dB signal attenuation, and the first attenuator (13) and the second attenuator (14) are connected in series, so that the third attenuator (15) and the fourth attenuator (16) are connected in series to respectively realize 63dB signal attenuation.
7. The programmable attenuation millimeter wave transceiver front-end assembly of claim 1, wherein: the singlechip (17) is an STM32F103RCT6 singlechip, and the STM32F103RCT6 singlechip performs 16-bit stepping control to respectively control the 8-bit attenuation of intermediate frequency output and the 8-bit attenuation of external intermediate frequency input.
8. The programmable attenuation millimeter wave transceiver front-end assembly of claim 1, wherein: the middle power amplifier (18) is a middle power amplifier of the MWG101, and the high power amplifier (19) is a TGA4516 high power amplifier.
9. The programmable attenuation millimeter wave transceiver front-end assembly of claim 1, wherein: the novel high-power single-chip microcomputer (PCB) further comprises a main cavity (101), a cavity front cover plate (102), a cavity rear cover plate (103), a first carrier (104), a second carrier (105), a third carrier (106), a fourth carrier (107), a first cover plate (108), a second cover plate (109), a third cover plate (1010), a fourth cover plate (1011), a fifth cover plate (1012), a sixth cover plate (1013) and a printed board (1014), wherein the first carrier (104) is provided with a first low-noise amplifier (5), a second low-noise amplifier (6), a third low-noise amplifier (7), a first mixer (8), a fourth low-noise amplifier (10), a fifth low-noise amplifier (11), a first attenuator (13) and a second attenuator (14), the second carrier (105) is provided with a driving amplifier (2) and a fourth frequency multiplier (3), the third carrier (106) is provided with a second mixer (9) and a sixth low-noise amplifier (12), the fourth carrier (107) is provided with a medium-power amplifier (18) and a high-power amplifier (19), the third carrier (16) is provided with a third carrier (16), and the third carrier (16) is provided with a phase-locked chip microcomputer (16), the third carrier (16) and the third carrier (16) is provided with a phase-locked-attenuator (16) The third carrier (106), the fourth carrier (107) and the band-pass filter (4) are fixed on the front end face of the main cavity (101), the phase-locked source (1) is fixed on the right upper side of the front end face of the main cavity (101), the band-pass filter (4) is fixed on the middle part of the left side of the front end face of the main cavity (101), the first cover plate (108) is covered on the lower side of the front end face of the first carrier (104), the second cover plate (109) is covered on the upper side of the front end face of the first carrier (104), the third cover plate (1010) is covered on the front end face of the third carrier (106), the fourth cover plate (1011) is covered on the upper side of the front end face of the fourth carrier (107), the fifth cover plate (1013) is covered on the lower side of the front end face of the fourth carrier (107), the sixth cover plate (1013) is covered on the front end face of the second carrier (105), the printed circuit board (1014) is fixed on the rear end face of the main cavity (101), the front cover plate (102) is fixed on the front end face of the main cavity (101) and tightly pressed on the first cover plate (108), the third cover plate (1011), the fourth cover plate (1013) and the printed board (1013) are tightly pressed on the front end face of the fourth cover plate (1013) and the printed board (101).
10. The programmable attenuation millimeter wave transceiver front-end assembly of claim 9, wherein: the first carrier (104) is of a different structure, a hollowed-out groove is formed in the middle of the first carrier (104) to form an isolation part (1041), and the first attenuator (13) and the second attenuator (14) are attached to the isolation part (1041).
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|---|---|---|---|
| CN202321706443.3U CN220188709U (en) | 2023-06-30 | 2023-06-30 | Program-controlled attenuation millimeter wave receiving and transmitting front end assembly |
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| CN202321706443.3U CN220188709U (en) | 2023-06-30 | 2023-06-30 | Program-controlled attenuation millimeter wave receiving and transmitting front end assembly |
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