CN217561728U - On-chip double-chip integrated time-of-flight sensor - Google Patents
On-chip double-chip integrated time-of-flight sensor Download PDFInfo
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- CN217561728U CN217561728U CN202221010294.2U CN202221010294U CN217561728U CN 217561728 U CN217561728 U CN 217561728U CN 202221010294 U CN202221010294 U CN 202221010294U CN 217561728 U CN217561728 U CN 217561728U
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Abstract
The utility model discloses an on-chip double chip integrated time of flight sensor belongs to time of flight sensor technical field, and aim at solves the problem that prior art transmission ultrasonic wave and receipt ultrasonic wave's performance can't be compromise simultaneously. The ultrasonic transmission chip and the ultrasonic receiving chip are electrically connected with the PCB substrate through gold wire bonding wires, a sound inlet hole and a sound outlet hole are formed in the non-metal shell, the circle center of the sound inlet hole is right opposite to the ultrasonic receiving chip, and the circle center of the sound outlet hole is right opposite to the ultrasonic transmission chip. The utility model is suitable for an on-chip double chip integrated time of flight sensor.
Description
Technical Field
The utility model belongs to the technical field of the time of flight sensor, concretely relates to on-chip double chip integrated time of flight sensor.
Background
A Time Of Flight (TOF) sensor is a sensor that measures distance using ultrasonic waves. The basic principle is that ultrasonic waves are emitted outwards from the emitting end of the TOF sensor. When the ultrasonic wave meets an obstacle, the ultrasonic wave is reflected, and the reflected ultrasonic wave signal is received by a receiving end of the TOF sensor. Since the speed of the ultrasonic wave in the propagation medium is constant, the distance between the obstacle and the ultrasonic sensor can be obtained according to the time difference between the transmission and the reception of the ultrasonic wave.
The TOF sensor needs to transmit and receive ultrasonic waves, and a module in the TOF sensor responsible for transmitting and receiving the ultrasonic waves is used as an ultrasonic transducer. Thus, conventional TOF sensor designs come in a variety of forms. As shown in fig. 1, the TOF sensor has only one ultrasonic transducer on the chip, called a single tube device. The transducers are self-transmitting and self-receiving, i.e. one transducer is responsible for both transmitting and receiving ultrasound waves. As shown in fig. 2, the TOF sensor has two ultrasonic transducers on its chip, called a dual tube device. The transducers are one-to-one, i.e., one is responsible for transmitting ultrasound only and the other is responsible for receiving.
The core chip of the TOF sensor, i.e. the micromechanical piezoelectric ultrasonic transducer, is implemented by a micro-electromechanical system (MEMS) chip. The piezoelectric MEMS ultrasonic transducer chips currently in commercial use are mainly classified into two types, one type uses lead zirconate titanate (PZT) as a piezoelectric material, and the other type uses aluminum nitride (AlN) as a piezoelectric material.
PZT material has the advantage of large piezoelectric coefficient, i.e. d 33 Can reach 200pC/N and has high electromechanical conversion efficiency. The ultrasonic transducer can output larger sound pressure level, improves the signal intensity of ultrasonic waves, enables the ultrasonic waves to be transmitted farther and enables echo signals to be stronger. However, PZT materials have the disadvantage of having a high relative permittivity, typically greater than 1000. Therefore, the PZT material has high dielectric loss and low sensitivity for receiving ultrasonic waves.
The AlN material has advantages of low loss and high sensitivity, has a relative dielectric constant of less than 10, and has high reception sensitivity when receiving ultrasonic waves. AlN Material has a disadvantage of low piezoelectric coefficient, d 33 The sound pressure of the AlN material for emitting ultrasonic waves is only about 5 pC/N.
Therefore, for the traditional piezoelectric MEMS ultrasonic transducer, whether a single tube or a double tube is designed and manufactured based on the same piezoelectric material as long as the single chip is manufactured and processed. Therefore, the conventional piezoelectric MEMS ultrasonic transducer cannot achieve both of the performance of transmitting ultrasonic waves and the performance of receiving ultrasonic waves.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide an: the utility model provides an on-chip double chip integrated time of flight sensor, the problem of prior art transmission ultrasonic wave and the unable compromise of performance of receiving the ultrasonic wave simultaneously is solved.
The utility model adopts the technical scheme as follows:
the utility model provides an on-chip double chip integrated time-of-flight sensor, includes non-metallic shell, PCB base plate, ultrasonic emission chip, ultrasonic wave receiving chip, non-metallic shell installs on the PCB base plate and encloses with the PCB base plate and close and be formed with the cavity, ultrasonic emission chip and ultrasonic wave receiving chip set up in the cavity and install in PCB base plate upper surface, ultrasonic emission chip and ultrasonic wave receiving chip pass through gold wire bonding wire and are connected with PCB base plate electricity, the sound inlet hole has been seted up on the non-metallic shell and have been gone out the sound hole, the centre of a circle of sound inlet hole is just to ultrasonic wave receiving chip, the centre of a circle of going out the sound hole is just to ultrasonic emission chip.
Further, the ultrasonic transmitting chip comprises a first silicon-based substrate, wherein a first piezoelectric material structure layer is arranged on the first silicon-based substrate, a first vibration structure is arranged on the upper surface of the first piezoelectric material structure layer, and an excitation electrode is arranged in the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is sleeved on the edge of the second vibration structure.
Further, the first vibration structure and the second vibration structure are both circular, the excitation electrode is circular and covers the first vibration structure, and the diameter of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is a circular ring and is sleeved on the edge of the second vibration structure.
Furthermore, the first vibration structure and the second vibration structure are both square, the excitation electrode is square and covers the first vibration structure, and the side length of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is a square frame and is sleeved on the edge of the second vibration structure.
Further, the ultrasonic transmitting chip comprises a first silicon-based substrate, wherein a first piezoelectric material structure layer is arranged on the first silicon-based substrate, a first vibration structure is arranged on the upper surface of the first piezoelectric material structure layer, and an excitation electrode is arranged in the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, wherein a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is arranged in the second vibration structure.
Further, the first vibration structure and the second vibration structure are both circular, the excitation electrode is circular and covers the first vibration structure, and the diameter of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is circular and covers in the second vibrating structure, and the diameter of receiving electrode is less than the second vibrating structure diameter.
Further, the ultrasonic emission chip comprises a first silicon-based substrate, wherein a first piezoelectric material structure layer is arranged on the first silicon-based substrate, a first vibration structure is arranged on the upper surface of the first piezoelectric material structure layer, and an excitation electrode is sleeved on the edge of the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, wherein a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is sleeved on the edge of the second vibration structure.
Furthermore, the first vibration structure and the second vibration structure are both circular, the excitation electrode is a circular ring, and the excitation electrode is sleeved on the edge of the first vibration structure; the receiving electrode is a circular ring and is sleeved at the edge of the second vibration structure.
Further, the first piezoelectric material structure layer and the second piezoelectric material structure layer are made of PZT materials or AlN materials.
To sum up, owing to adopted above-mentioned technical scheme, the beneficial effects of the utility model are that:
1. the utility model discloses in, adopt two pieces of independent piezoelectricity micro-mechanical ultrasonic transducer chips, carry out the integrated encapsulation of piece and constitute a time of flight sensor. The two independent ultrasonic transmitting chips and ultrasonic receiving chips are more biased to the respective advantageous designs on the chips. Can adopt the transducer configuration that is more favorable to transmission or receiving ultrasonic wave respectively, including structure and the excitation electrode setting for transmitting the ultrasonic wave design specially to and structure and receiving electrode setting for receiving the ultrasonic wave design specially, promoted the performance of sensor transmission ultrasonic wave and these two aspects of receiving the ultrasonic wave greatly, solved the problem that prior art transmission ultrasonic wave and the performance of receiving the ultrasonic wave can't be compromise simultaneously.
2. The utility model discloses in, two pieces of independent ultrasonic emission chips and ultrasonic emission chip receiving chip can be partial to respective advantage more in piezoelectric material's selection. The ultrasonic transmitting chip can be made of PZT materials with higher piezoelectric coefficients, and the ultrasonic receiving chip can be made of AlN materials with lower dielectric constants, so that the performances of the ultrasonic transmitting chip and the ultrasonic receiving chip of the sensor are greatly improved, and the problem that the performances of the ultrasonic transmitting chip and the ultrasonic receiving chip of the prior art can not be considered simultaneously is solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
FIG. 1 is a schematic diagram of a prior art single-tube device structure;
FIG. 2 is a schematic diagram of a prior art dual-tube device configuration;
fig. 3 is a schematic view of the installation of the ultrasonic transmitting chip and the ultrasonic receiving chip of the present invention;
fig. 4 is a schematic structural view of the ultrasonic emitting chip of the present invention;
fig. 5 is a schematic structural diagram of an ultrasonic receiving chip of the present invention;
fig. 6 is a perspective view of the present invention;
fig. 7 is a schematic view of the chip mounting of the square vibrating structure of the present invention;
fig. 8 is a first reference diagram of the ultrasonic transmitting chip and the ultrasonic receiving chip of the present invention having the same configuration;
fig. 9 is a second reference view showing the same configuration of the ultrasonic wave transmitting chip and the ultrasonic wave receiving chip according to the present invention;
the mark in the figure is: the ultrasonic transducer comprises a PCB (printed circuit board), 2-ultrasonic transmitting chips, 21-first vibration structures, 22-exciting electrodes, 23-first piezoelectric material structure layers, 24-first silicon-based substrates, 3-ultrasonic transmitting chips, 31-second vibration structures, 32-receiving electrodes, 33-second piezoelectric material structure layers, 34-second silicon-based substrates, 4-sound inlet holes, 5-sound outlet holes and 6-nonmetal shells.
Detailed Description
To make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the attached drawings in the embodiments of the present invention are combined to clearly and completely describe the technical solution in the embodiments of the present invention, and obviously, the described embodiments are part of the embodiments of the present invention, rather than all embodiments. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
It should be noted that: reference numerals and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the product of the present invention is used, and are only for the convenience of describing the present invention, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; mechanical connection or electrical connection can be realized; the two original pieces can be directly connected or indirectly connected through an intermediate medium, or the two original pieces can be communicated with each other. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The utility model provides an on-chip double chip integrated time-of-flight sensor, includes non-metallic casing, PCB base plate, ultrasonic emission chip, ultrasonic wave receiving chip, non-metallic casing installs on the PCB base plate and encloses with the PCB base plate and close and be formed with the cavity, ultrasonic emission chip and ultrasonic wave receiving chip set up in the cavity and install in PCB base plate upper surface, ultrasonic emission chip and ultrasonic wave receiving chip pass through gold wire bonding line and are connected with PCB base plate electricity, sound inlet hole and play sound hole have been seted up on the non-metallic casing, the centre of a circle of sound inlet hole is just to the ultrasonic wave receiving chip, the centre of a circle of play sound hole is just to the ultrasonic emission chip.
Further, the ultrasonic transmitting chip comprises a first silicon-based substrate, wherein a first piezoelectric material structure layer is arranged on the first silicon-based substrate, a first vibration structure is arranged on the upper surface of the first piezoelectric material structure layer, and an excitation electrode is arranged in the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, wherein a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is sleeved on the edge of the second vibration structure.
Further, the first vibration structure and the second vibration structure are both circular, the excitation electrode is circular and covers the first vibration structure, and the diameter of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is a circular ring and is sleeved on the edge of the second vibration structure.
Furthermore, the first vibration structure and the second vibration structure are both square, the excitation electrode is square and covers the first vibration structure, and the side length of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is a square frame and is sleeved on the edge of the second vibration structure.
Further, the ultrasonic transmitting chip comprises a first silicon-based substrate, wherein a first piezoelectric material structure layer is arranged on the first silicon-based substrate, a first vibration structure is arranged on the upper surface of the first piezoelectric material structure layer, and an excitation electrode is arranged in the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, wherein a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is arranged in the second vibration structure.
Further, the first vibration structure and the second vibration structure are both circular, the excitation electrode is circular and covers the first vibration structure, and the diameter of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is circular and covers in the second vibration structure, and the diameter of receiving electrode is less than the diameter of second vibration structure.
Further, the ultrasonic transmitting chip comprises a first silicon-based substrate, wherein a first piezoelectric material structure layer is arranged on the first silicon-based substrate, a first vibration structure is arranged on the upper surface of the first piezoelectric material structure layer, and an excitation electrode is sleeved on the edge of the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is sleeved on the edge of the second vibration structure.
Furthermore, the first vibration structure and the second vibration structure are both circular, the excitation electrode is a circular ring, and the excitation electrode is sleeved on the edge of the first vibration structure; the receiving electrode is a circular ring and is sleeved on the edge of the second vibration structure.
Further, the first piezoelectric material structure layer and the second piezoelectric material structure layer are made of PZT materials or AlN materials.
The utility model discloses in the implementation, as shown in fig. 3, fig. 6, on a PCB base plate, integrate a piece of dedicated ultrasonic emission chip and a piece of dedicated ultrasonic receiving chip respectively. The two chips are respectively used for transmitting and receiving ultrasonic waves, metal electrodes on the chips are connected to the PCB substrate through gold wire bonding wires, and the chip further comprises a non-metal shell. The non-metal shell is respectively provided with a circular sound inlet hole and a circular sound outlet hole, and the circle centers of the circular sound inlet hole and the circular sound outlet hole are respectively over against the circle centers of the ultrasonic receiving chip and the ultrasonic transmitting chip. The non-metal shell and the on-chip double-chip integrated time-of-flight sensor are integrally packaged to form a complete time-of-flight sensor.
The two chips are not restricted by the performance of both transmitting and receiving when being designed and manufactured. In the invention, because the two chips are relatively independent, the special design can be carried out according to the advantages of the two chips.
A dedicated ultrasound emitting chip, as shown in fig. 4. The structure of the piezoelectric ceramic mainly comprises a first vibration structure, an excitation electrode, a first piezoelectric material structure layer and a first silicon-based substrate. The vibrating structure is circular, and the structure vibrates up and down by the inverse piezoelectric effect, thereby generating ultrasonic waves. The excitation electrode covers the central region of the first vibrating structure, and the diameter of the excitation electrode is smaller than that of the first vibrating structure. The first piezoelectric material structure layer is formed by taking a PZT material as a core to form a piezoelectric layer. The first silicon-based substrate takes silicon as a material to serve as a vibration structure layer and a base. The dimensions of the first vibrating structure and the excitation electrode may be adjusted as desired within the chip area.
A dedicated ultrasound receiving chip, as shown in fig. 5. The structure of the piezoelectric transducer mainly comprises a second vibration structure, a receiving electrode, a second piezoelectric material structure layer and a second silicon-based substrate. The second vibration structure is circular, receives external vibration, generates an electric signal through a piezoelectric effect, and obtains the size of the signal of the received ultrasonic wave. The receiving electrode is in a ring shape, and the receiving electrode is overlapped with the outer edge of the second vibration structure. The second piezoelectric material structure layer is a piezoelectric layer formed by taking an AlN material as a core. The second silicon-based substrate takes silicon as a material to serve as a vibration structure layer and a base. The dimensions of the second vibrating structure and the first receiving electrode can be adjusted as desired within the chip area.
The piezoelectric material structure layer of the special ultrasonic transmitting chip and the special ultrasonic receiving chip can be PZT material or AlN material. According to the performance advantages of the piezoelectric material in the aspects of piezoelectric coefficient, dielectric constant and the like, the optimal design is that the ultrasonic transmitting chip is made of PZT material, and the ultrasonic receiving chip is made of AlN material. However, in the specific implementation process, alN material may be used for the ultrasonic wave emitting chip, and PZT material may be used for the ultrasonic wave receiving chip. Or the two chips can be both PZT material or AlN material.
The PZT material is lead zirconate titanate (Pb (Zr) 1-x Ti x )O 3 ) A core piezoelectric material system. The piezoelectric material system includes, but is not limited to, PZT with different material component ratios, PZT with different crystal orientations, single crystal and polycrystalline PZT, PZT doped with various components, such as niobium (Nb), bismuth (Bi), lanthanum (La), and barium (Ba). AlN material refers to a piezoelectric material system with aluminum nitride as a core. The piezoelectric material system includes, but is not limited to, alN with different crystal orientations, and AlN doped with various components, for example, with Sc (scandium), magnesium (Mg), zirconium (Zr), and other elements.
Meanwhile, the vibration structure shapes of the ultrasonic transmitting chip and the ultrasonic receiving chip may be square, as shown in fig. 7. Correspondingly, the excitation electrode is a square structure with the side length smaller than that of the first vibration structure, and the receiving electrode is a square frame sleeved on the side length of the second vibration structure.
Further, for a two-chip integrated time-of-flight sensor on a chip, the dedicated ultrasonic wave transmitting chip and the dedicated ultrasonic wave receiving chip can be configured in the same structure. As shown in fig. 8, it is a first reference diagram of the same configuration of the ultrasonic wave transmitting chip and the ultrasonic wave receiving chip, i.e. the chip structure in fig. 4; as shown in fig. 9, a second reference drawing is a drawing showing the same configuration of the ultrasonic wave transmitting chip and the ultrasonic wave receiving chip, and the chip structure of fig. 5.
Example 1
The utility model provides an on-chip double chip integrated time-of-flight sensor, includes non-metallic casing, PCB base plate, ultrasonic emission chip, ultrasonic wave receiving chip, non-metallic casing installs on the PCB base plate and encloses with the PCB base plate and close and be formed with the cavity, ultrasonic emission chip and ultrasonic wave receiving chip set up in the cavity and install in PCB base plate upper surface, ultrasonic emission chip and ultrasonic wave receiving chip pass through gold wire bonding line and are connected with PCB base plate electricity, sound inlet hole and play sound hole have been seted up on the non-metallic casing, the centre of a circle of sound inlet hole is just to the ultrasonic wave receiving chip, the centre of a circle of play sound hole is just to the ultrasonic emission chip.
Example 2
On the basis of embodiment 1, the ultrasonic wave emitting chip includes a first silicon-based substrate, a first piezoelectric material structure layer is disposed on the first silicon-based substrate, a first vibration structure is disposed on an upper surface of the first piezoelectric material structure layer, and an excitation electrode is disposed in the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is sleeved on the edge of the second vibration structure.
Example 3
On the basis of the above embodiment, the first vibration structure and the second vibration structure are both circular, the excitation electrode is circular and covered in the first vibration structure, and the diameter of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is a circular ring and is sleeved at the edge of the second vibration structure.
Example 4
On the basis of the above embodiment, the first vibration structure and the second vibration structure are both square, the excitation electrode is square and covers the first vibration structure, and the side length of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is a square frame and is sleeved at the edge of the second vibration structure.
Example 5
On the basis of the above embodiment, the ultrasonic wave emitting chip includes a first silicon-based substrate, a first piezoelectric material structure layer is disposed on the first silicon-based substrate, a first vibration structure is disposed on an upper surface of the first piezoelectric material structure layer, and an excitation electrode is disposed in the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, wherein a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is arranged in the second vibration structure.
Example 6
On the basis of the above embodiment, the first vibration structure and the second vibration structure are both circular, the excitation electrode is circular and covered in the first vibration structure, and the diameter of the excitation electrode is smaller than that of the first vibration structure; the receiving electrode is circular and covers in the first vibrating structure, and the diameter of receiving electrode is less than the second vibrating structure diameter.
Example 7
On the basis of the embodiment, the ultrasonic transmitting chip comprises a first silicon-based substrate, wherein a first piezoelectric material structure layer is arranged on the first silicon-based substrate, a first vibration structure is arranged on the upper surface of the first piezoelectric material structure layer, and an excitation electrode is sleeved on the edge of the first vibration structure;
the ultrasonic receiving chip comprises a second silicon-based substrate, a second piezoelectric material structure layer is arranged on the second silicon-based substrate, a second vibration structure is arranged on the upper surface of the second piezoelectric material structure layer, and a receiving electrode is sleeved on the edge of the second vibration structure.
Example 8
On the basis of the embodiment, the first vibration structure and the second vibration structure are both circular, the excitation electrode is a circular ring, and the excitation electrode is sleeved on the edge of the first vibration structure; the receiving electrode is a circular ring and is sleeved at the edge of the second vibration structure.
Example 9
On the basis of the above embodiment, the material of the first piezoelectric material structure layer and the second piezoelectric material structure layer is PZT material or AlN material.
The above is the embodiment of the present invention. The foregoing is the preferred embodiments of the present invention, and if they are not obviously contradictory or are not assumed to be obvious, all the preferred embodiments can be combined and used by any superposition, and the specific parameters in the embodiments are only for clearly representing the verification process of the present invention, and are not used to limit the patent protection scope of the present invention, which is still subject to the claims, and all the equivalent structural changes made by applying the contents of the specification and the drawings of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. The utility model provides an on-chip double chip integrated time-of-flight sensor, its characterized in that, includes non-metallic casing (6), PCB base plate (1), ultrasonic emission chip (2), ultrasonic wave receiving chip (3), non-metallic casing (6) are installed on PCB base plate (1) and are enclosed to close with PCB base plate (1) and are formed with the cavity, ultrasonic emission chip (2) and ultrasonic wave receiving chip (3) set up in the cavity and install in PCB base plate (1) upper surface, ultrasonic emission chip (2) and ultrasonic wave receiving chip (3) are connected with PCB base plate (1) electricity through gold wire bonding line, sound inlet hole (4) and play sound hole (5) have been seted up on non-metallic casing (6), the centre of a circle of sound inlet hole (4) is just receiving chip (3) to the ultrasonic wave, the centre of a circle of play sound hole (5) is just to ultrasonic emission chip (2).
2. The on-chip dual-chip integrated time-of-flight sensor according to claim 1, wherein the ultrasonic transmitting chip (2) comprises a first silicon-based substrate (24), a first piezoelectric material structure layer (23) is disposed on the first silicon-based substrate (24), a first vibrating structure (21) is disposed on an upper surface of the first piezoelectric material structure layer (23), and an excitation electrode (22) is disposed in the first vibrating structure (21);
the ultrasonic receiving chip (3) comprises a second silicon-based substrate (34), a second piezoelectric material structure layer (33) is arranged on the second silicon-based substrate (34), a second vibration structure (31) is arranged on the upper surface of the second piezoelectric material structure layer (33), and a receiving electrode (32) is sleeved on the edge of the second vibration structure (31).
3. A two-chip integrated time-of-flight sensor on a chip according to claim 2, wherein the first vibrating structure (21) and the second vibrating structure (31) are both circular, the excitation electrode (22) is circular and the excitation electrode (22) is housed within the first vibrating structure (21), the excitation electrode (22) having a diameter smaller than the diameter of the first vibrating structure (21); the receiving electrode (32) is a circular ring, and the edge of the second vibration structure (31) is sleeved with the receiving electrode (32).
4. A two-chip integrated time-of-flight sensor on a chip according to claim 2, wherein the first vibrating structure (21) and the second vibrating structure (31) are both square, the excitation electrode is square and the excitation electrode is covered in the first vibrating structure (21), the side length of the excitation electrode (22) is smaller than the side length of the first vibrating structure (21); the receiving electrode (32) is a square frame, and the edge of the second vibration structure (31) is sleeved with the receiving electrode (32).
5. A two-chip-on-a-chip integrated time-of-flight sensor according to claim 1, wherein the ultrasonic wave emitting chip (2) comprises a first silicon-based substrate (24), a first piezoelectric material structure layer (23) is disposed on the first silicon-based substrate (24), a first vibrating structure (21) is disposed on the upper surface of the first piezoelectric material structure layer (23), and an excitation electrode (22) is disposed in the first vibrating structure (21);
the ultrasonic receiving chip (3) comprises a second silicon-based substrate (34), a second piezoelectric material structure layer (33) is arranged on the second silicon-based substrate (34), a second vibration structure (31) is arranged on the upper surface of the second piezoelectric material structure layer (33), and a receiving electrode (32) is arranged in the second vibration structure (31).
6. A two-chip integrated time-of-flight sensor on a chip according to claim 5, wherein the first vibrating structure (21) and the second vibrating structure (31) are both circular, the excitation electrode (22) is circular and the excitation electrode (22) is covered in the first vibrating structure (21), the excitation electrode (22) has a diameter smaller than the diameter of the first vibrating structure (21); the receiving electrode (32) is circular and the receiving electrode (32) covers the second vibrating structure (31), and the diameter of the receiving electrode (32) is smaller than that of the second vibrating structure (31).
7. The on-chip dual-chip integrated time-of-flight sensor according to claim 1, wherein the ultrasonic emission chip (2) comprises a first silicon-based substrate (24), a first piezoelectric material structure layer (23) is arranged on the first silicon-based substrate (24), a first vibration structure (21) is arranged on the upper surface of the first piezoelectric material structure layer (23), and an excitation electrode (22) is sleeved on the edge of the first vibration structure (21);
the ultrasonic receiving chip (3) comprises a second silicon-based substrate (34), a second piezoelectric material structure layer (33) is arranged on the second silicon-based substrate (34), a second vibration structure (31) is arranged on the upper surface of the second piezoelectric material structure layer (33), and a receiving electrode (32) is sleeved on the edge of the second vibration structure (31).
8. The on-chip dual-chip integrated time-of-flight sensor according to claim 7, wherein the first vibrating structure (21) and the second vibrating structure (31) are both circular, the excitation electrode (22) is a circular ring and the excitation electrode (22) is sleeved on the edge of the first vibrating structure (21); the receiving electrode (32) is a circular ring, and the edge of the second vibration structure (31) is sleeved with the receiving electrode (32).
9. A two-chip integrated time-of-flight sensor according to claim 2, 5 or 7, characterized in that the material of the first piezoelectric material structure layer (23) and the second piezoelectric material structure layer (33) is PZT material or AlN material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202221010294.2U CN217561728U (en) | 2022-04-28 | 2022-04-28 | On-chip double-chip integrated time-of-flight sensor |
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| CN202221010294.2U CN217561728U (en) | 2022-04-28 | 2022-04-28 | On-chip double-chip integrated time-of-flight sensor |
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