CN212647049U - Planar optical waveguide chip and waveguide type single-mode fiber laser - Google Patents
Planar optical waveguide chip and waveguide type single-mode fiber laser Download PDFInfo
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- CN212647049U CN212647049U CN202021065130.0U CN202021065130U CN212647049U CN 212647049 U CN212647049 U CN 212647049U CN 202021065130 U CN202021065130 U CN 202021065130U CN 212647049 U CN212647049 U CN 212647049U
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Abstract
The utility model belongs to the technical field of laser, especially, a planar optical waveguide chip and waveguide type single mode fiber laser, it includes planar optical waveguide chip main part, planar optical waveguide chip main part is used for butt joint coupling semiconductor laser's transmission laser, planar optical waveguide chip main part includes income light end and light-emitting end, from the income light end to the light-emitting end, the waveguide width is the gradient and reduces, from the income light end to the light-emitting end, waveguide thickness is unchangeable, the waveguide thickness and the waveguide width of light-emitting end are equal, the utility model discloses the constitution of the complicated optical components that is different from traditional type fiber laser, this single mode fiber laser can get into the less single mode fiber of fiber core diameter to the multimode laser lossless coupling that high-power semiconductor laser transmitted through this simple optical components of planar optical waveguide chip, therefore, high-power laser is directly output through the single-mode optical fiber.
Description
Technical Field
The utility model belongs to the technical field of laser, concretely relates to planar optical waveguide chip and waveguide type single mode fiber laser.
Background
In recent years, fiber laser technology has been developed rapidly, and fiber lasers have many convenient properties due to the use of optical fibers for laser output. However, other companies and research units in the industry mostly focus on the increase of the absolute power of the fiber laser: most of them use multimode fibers (fig. 1) as the light-emitting fibers, and few manufacturers have made high-power (>1W) laser outputs of pure single-mode fibers (fig. 2).
The reason for this is that in the conventional fiber laser (as shown in fig. 3), the multimode laser output fiber has a larger core diameter, and satisfies the formula d >2.405 λ/(pi × NA), where d is the fiber core diameter, λ is the fiber transmission wavelength, and NA is the fiber numerical aperture. The multimode fiber is easy to realize the coupling of a laser pumping light source and the ion excitation of the active region fiber in a short length because the fiber core diameter of the rare earth ion doped region is larger, thereby realizing the high-power laser output; and the core diameter of the single-mode optical fiber is smaller: satisfying the formula d <2.405 x λ/(pi x NA).
For the traditional fiber laser, because the core diameter of the single mode fiber is small, the absorption efficiency of the active region fiber to the pump light is very low, and the long active region fiber is needed to absorb the pump light, the traditional fiber laser popular at present is difficult to couple the high-power laser into the single mode fiber and emit the high-power laser out.
Single mode fiber lasers have significant advantages over multimode fiber lasers: because the single-mode fiber laser outputs the quasi-Gaussian laser beam through the single-mode fiber, the beam quality is good, the factor M2 is very small, the factor M2 is less than 1.05, the ideal Gaussian beam is approached, the spatial derivation rule of the output single-mode laser accords with a Gaussian laser transmission formula, the integration, the beam expansion and other transformations are easy, and the accurate laser processing can be realized. The output beam of the multimode fiber laser is multimode laser which is a mixed mode laser, the M ^2 factor is large, the beam after the output fiber is irregularly derived in space, is not easy to integrate and expand and cannot be precisely processed by laser. In addition, because the single-mode laser beam has good quality and small optical parameter product, the method can realize accurate positioning and is used in the field of fine laser processing; the multimode fiber cannot be used in the field of fine laser processing due to poor beam quality.
In order to solve the above problems, the present application provides a planar optical waveguide chip and a waveguide type single mode fiber laser.
SUMMERY OF THE UTILITY MODEL
To solve the problems set forth in the background art described above. The utility model provides a planar optical waveguide chip and waveguide type single mode fiber laser has and can get into the less single mode fiber of fibre core footpath to the multimode laser lossless ground coupling that high-power semiconductor laser launched in to realize the direct characteristics through single mode fiber output of high-power laser.
In order to achieve the above object, the utility model provides a following technical scheme: the planar optical waveguide chip comprises a planar optical waveguide chip main body, wherein the planar optical waveguide chip main body is used for butt-coupling laser emitted by a semiconductor laser, the planar optical waveguide chip main body comprises an optical input end and an optical output end, and the optical input end is connected with the optical output end, so that the waveguide width is reduced in a gradient manner.
As the utility model relates to a planar optical waveguide chip is preferred, follow the income light end extremely go out the light end, waveguide thickness is unchangeable.
As the utility model relates to a planar optical waveguide chip is preferred, the waveguide thickness and the waveguide width of light-emitting end equal.
As an optimization of the planar optical waveguide chip of the present invention, the light incident end is a rectangular rectangle slightly larger than the emitting area of the semiconductor light emitting cavity surface.
As the utility model relates to a planar optical waveguide chip is preferred, laser follows the income light end extremely go out the light end, diffract to single mode waveguide by multimode waveguide.
As the utility model relates to a planar optical waveguide chip is preferred, planar optical waveguide chip main part adopts the quartz glass material preparation to form.
As an optimization of the planar optical waveguide chip of the present invention, the end face of the light incident end and/or the end face of the light emitting end is plated with an antireflection film.
As the utility model relates to a planar optical waveguide chip is preferred, go into the terminal surface of light end and/or the terminal surface of light-emitting end is the plane, go into the terminal surface and the side of light-emitting end with each other is the right angle between the bottom surface of planar optical waveguide chip main part.
As the utility model relates to a planar optical waveguide chip is preferred, the width of income light end is 100 microns, the width of light-emitting end is 3 microns, waveguide thickness is 3 microns.
The utility model discloses still provide following technical scheme: a waveguide type single mode fiber laser comprises a semiconductor laser, a single mode fiber connector and a planar optical waveguide chip main body, wherein the planar optical waveguide chip main body is any one of the planar optical waveguide chips.
Compared with the prior art, the utility model discloses be different from the complicated optical components's of traditional type fiber laser constitution, this single mode fiber laser passes through this simple optical devices of planar optical waveguide chip and can get into the less single mode fiber of fibre core footpath to the multimode laser that high-power semiconductor laser launched lossless ground coupling to realize that high-power laser directly passes through single mode fiber output.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a typical multimode optical fiber configuration;
FIG. 2 is a schematic diagram of a typical single mode fiber structure;
FIG. 3 is a schematic diagram of a conventional fiber laser;
FIG. 4 is a schematic structural diagram of a midplane optical waveguide chip body according to the present invention;
fig. 5 is a schematic view of the light emitting principle of the semiconductor laser of the present invention;
fig. 6 is a schematic diagram of the waveguide type single mode fiber laser of the present invention;
in the figure: 1. a planar optical waveguide chip body; 10. a light emitting end; 11. a light input end; 12. a waveguide width; 13. the thickness of the waveguide; 2. a semiconductor laser; 20. an active region; 21. a light field-confined region; 22. a metal film; 23. a multi-shaped contact surface; 24. an insulating layer; 25. slow axis divergence angle; 26. a fast axis divergence angle; 27. an emission region; 28. a laser light emitting cavity surface; 3. desert optical fiber connectors; 4. a mirror; 5. an active fiber cladding; 6. an active optical fiber core; 7. pumping laser; 8. the output laser light is emitted.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example 1
As shown in fig. 1-5, the utility model provides a pair of planar optical waveguide chip, including planar optical waveguide chip main part 1, planar optical waveguide chip main part 1 is used for the laser of butt joint coupling semiconductor laser 2 transmission, and planar optical waveguide chip main part 1 includes income light end 11 and light-emitting end 10, from income light end 11 to light-emitting end 10, and waveguide width 12 is the gradient and reduces.
Specifically, the waveguide thickness 13 is constant from the light entrance end 11 to the light exit end 10.
Specifically, the waveguide thickness 13 and the waveguide width 12 of the light exit end 10 are equal.
Specifically, the light entrance end 11 is an elongated rectangle slightly larger than the emitter region 27 of the semiconductor light emitting cavity surface 28.
Specifically, the laser light is diffracted from the light input end 11 to the light output end 10 by the multimode waveguide into a single-mode waveguide.
Specifically, the planar optical waveguide chip body 1 is made of a quartz glass material.
Specifically, the end face of the light incident end 11 and/or the end face of the light exit end 10 are/is coated with an antireflection film.
Specifically, the end surface of the light input end 11 and/or the end surface of the light output end 10 are planar, and the end surface and the side surface of the light input end 11, the end surface and the side surface of the light output end 10, and the bottom surface of the planar optical waveguide chip body 1 are perpendicular to each other.
Specifically, the width of the light-entering end 11 is 100 micrometers, the width of the light-exiting end 10 is 3 micrometers, and the waveguide thickness 13 is 3 micrometers.
In this embodiment, the light input end 11 and the light output end 10 of the planar optical waveguide chip body 1 are asymmetric, so that the ribbon laser light emitted by the semiconductor laser 2 can be all coupled into the light input end 11 with similar shape and size of the planar optical waveguide, and is transmitted forward through the gradually narrowed waveguide of the planar optical waveguide, and is diffracted into pure single-mode laser light at the light output end 10 of the planar optical waveguide, and is transmitted out through the single-mode optical fiber connector 3.
The theoretical basis of the technical scheme comes from a patent document with the application number of 201711471552.0, and the technical scheme is highly consistent with the theory through practical inspection.
Since the emission region 27 of the laser emitting facet 28 of fig. 5 of the semiconductor laser 2 is an elongated light emitting strip: the light emitting sizes of the vertical axis of the light emitting fast axis and the horizontal axis of the light emitting slow axis are different, the length of the light emitting fast axis is short and about 1 micron, and the length of the light emitting slow axis is relatively long and about 100 microns; at the same time, the fast axis divergence angle 26 is greater than 30 ° and the slow axis divergence angle 25 is less by about 8 °. Therefore, in general, the laser of the semiconductor laser 2 is coupled into a multimode fiber with a core diameter of about 100 μm, and is used as a pump laser source of a conventional fiber laser; and the laser energy can not be directly coupled into the single mode fiber with the smaller core diameter less than 10 microns, most laser energy is lost if the laser energy is directly coupled and butted with the single mode fiber, the lost laser energy can cause local heating at the butted end face of the fiber coupling, the reliability of the device is reduced, the service life of the device is shortened, and the device can not be used.
In view of the light emitting characteristic of the semiconductor laser 2, the utility model designs a new section of planar optical waveguide chip figure 4 comes the laser that butt joint coupling semiconductor laser launches: the whole structure of the chip is a flat asymmetric structure, and the light inlet end 11 is a strip-shaped multi-mode waveguide port as follows: the width is 100 microns, the thickness is 5 microns, the waveguide width 12 is reduced in a gradient mode from the light inlet end 11 to the light outlet end 10 of the waveguide chip, the waveguide thickness 13 is unchanged, and the waveguide is derived into a single-mode waveguide from the light outlet end 10. Generally, the light exit end waveguides are equal in thickness and width.
The utility model discloses the planar optical waveguide chip that uses, its income light end 11 is owing to be the rectangular rectangle slightly bigger than the launch site of the luminous cavity face of semiconductor, so can make the all laser couplings of 2 launches of semiconductor laser get into planar optical waveguide's income light end, can not have the light loss. The laser is transmitted in the planar optical waveguide, and the planar optical waveguide is of a slowly narrowing structure and changes smoothly, so that no laser loss is caused in the planar optical waveguide, and the transmitted laser starts to gradually evolve from multiple modes to a single mode due to slow modulation of the refractive index of the waveguide along with forward transmission of the incident laser in the waveguide until the transmitted laser is completely evolved into single-mode laser at the output end of the planar optical waveguide, and then is coupled and output with a rear single-mode optical fiber joint.
Can see out by above laser coupling and transmission course, the utility model discloses an overall structure does not have laser loss point, and all laser that semiconductor laser launched can all couple and get into the planar lightwave circuit chip, is derived into single mode laser by multimode laser gradually behind this chip to by single mode fiber splice coupling output, reached semiconductor laser's high-efficient utilization.
The utility model discloses easily realize, personnel easy operation easily realizes large-scale production, will improve present single mode laser output power greatly and be milliwatt level usually, overcomes the shortcoming that present single mode laser power intensity is little, easily obtains tile level or tens of tile level's single mode laser device, and the single mode laser of these high powers that obtain, because the light beam is of high quality, can use them to carry out the integration and restraint, obtain the single mode laser of higher power.
The utility model discloses a successful development can replace the traditional type fiber laser that is popular at present, and the optical element quantity of the fiber laser that significantly reduces improves laser utilization efficiency greatly. Moreover, the utility model discloses can abandon the complicated fiber grating sculpture of active fiber region among the traditional fiber laser, processes such as tombarthite ion doping; in addition, the pumping light excitation utilization efficiency of the traditional optical fiber laser is low, the wavelength of the excited emergent laser is longer than that of the pumping light, and the laser energy loss is high. And the utility model discloses can directly make the semiconductor laser of any wavelength and intensity transmit laser and turn into single mode laser completely, do not receive the restriction of pump laser wavelength, can obtain the high-power laser of single mode of ultrashort or ultralong wave band.
In addition, because utility model is applicable to the laser that semiconductor laser of all bands launches, there is not the wavelength restriction. Therefore, only a single-mode fiber joint with proper waveguide width and proper core diameter needs to be designed according to the used wavelength, and the single-mode performance of the output laser can be easily ensured.
Example 2
As shown in fig. 1-6, a 976nm single mode fiber laser was fabricated:
preparation of semiconductor laser light source fig. 5: the semiconductor laser light source is purchased from a certain research institute in China, and is a semiconductor light source device with higher output power in China at present: the light-emitting wavelength is 976nm, the output power of a single tube is 10W, the slow axis length of the light-emitting end face, namely the width of the light-emitting area, is 90 microns, and the fast axis length is 1 micron, namely the height of the light-emitting area;
preparation of planar lightwave circuit chip fig. 4: the planar optical waveguide chip is made of quartz glass material, and the specific manufacturing process is the popular semiconductor photoetching process at present. The width of the light-incoming end of the planar optical waveguide chip is 100 micrometers, the thickness of the waveguide is 3 micrometers, the waveguide is kept unchanged everywhere, and the width of the light-outgoing end is 3 micrometers. The two end faces of the planar optical waveguide chip are polished and coated with 976nm antireflection film for use, the two end faces of the waveguide are planar, and the end face, the side face and the bottom face are perpendicular to each other.
Preparation of single-mode optical fiber joint: the single-mode fiber connector used in this embodiment is a single-mode fiber connector used in a common optical communication planar optical waveguide splitter, the diameter of the fiber core of the single-mode fiber is 4 micrometers, and the numerical aperture is 0.15.
Preparation of other auxiliary materials and equipment: a pair of six-dimensional precision adjusting frames, a special fixing clamp for an optical waveguide chip, a laser beam quality analyzer, an optical power meter, tweezers and the like.
Butt coupling between semiconductor laser light source and planar optical waveguide chip fig. 6: because the light-entering end waveguide end surface of the planar optical waveguide chip adopted in the embodiment is rectangular, and the rectangular area is slightly larger than the size of the light-emitting end surface of the semiconductor laser light source, the laser light emitted by the semiconductor laser light source used in the embodiment can be easily coupled into the light-entering end waveguide of the planar optical waveguide chip: 1. horizontally placing a semiconductor laser light source on an adjusting platform of a six-dimensional precision adjusting frame on the left hand side, wherein the light-emitting end face faces to the right; 2. placing a special fixing clamp for the optical waveguide chip on the right side of the six-dimensional adjusting frame, carefully placing the planar optical waveguide chip on the clamp by using tweezers in the direction shown in figure 6, and screwing down a clamp screw for fixing; 3. a laser beam quality analyzer is arranged at the light outlet end of the planar optical waveguide chip, and a probe of the analyzer can detect the beam quality of the emergent light of the planar optical waveguide chip; 4. the semiconductor laser light source is powered on and started, so that the light emitting power of the semiconductor laser light source is smaller and slightly larger than the threshold value of the laser so as not to generate a large amount of heat. The height and the angle of the six-dimensional adjusting frame on the left hand side are adjusted, and the power and the beam quality displayed by the laser beam quality analyzer are observed at the same time, so that laser is coupled into the planar optical waveguide chip to the maximum extent.
Coupling and butting a planar optical waveguide chip and a single-mode optical fiber joint: 5. after the coupling and butt joint of the semiconductor laser light source and the planar optical waveguide chip are finished, removing the laser beam quality analyzer, installing a right-hand six-dimensional adjusting frame, and horizontally placing the single-mode optical fiber connector on an adjusting platform of the six-dimensional adjusting frame to enable the end face of the single-mode optical fiber connector to be horizontally leftwards; 6. connecting 7 the tail end of the single-mode optical fiber connector with an optical power meter, adjusting the position of a right-hand six-dimensional adjusting frame, enabling the end face of the single-mode optical fiber connector to be in butt coupling with the light-emitting end face of the planar optical waveguide, and observing the numerical value of the optical power meter to optimize the numerical value;
integrally packaging the device: 8. and 7, after the step 7 is finished, bonding and packaging the joints by using high-quality ultraviolet glue, and observing the numerical value of the optical power meter to keep the optical power meter stable in the packaging process. And after the packaging is finished, the device is detached from the six-dimensional adjusting frame, and the whole device manufacturing process is finished.
As shown in fig. 1-6, based on the planar optical waveguide chip provided in the above embodiment, the utility model also provides a waveguide type single mode fiber laser, including semiconductor laser 2, single mode fiber splice 3 and planar optical waveguide chip main body 1, planar optical waveguide chip main body 1 is planar optical waveguide chip main body 1 of any one of the above embodiments.
In this embodiment, the waveguide type single mode fiber laser is designed based on the light emitting characteristics of the high power semiconductor laser as the overall flat planar optical waveguide structure shown in fig. 6, which is designed based on the laser light emitting cavity surface of the approximate line type, as shown in fig. 4. The laser coupling and transmission process shows that the whole structure of the waveguide type single-mode fiber laser has no laser loss point, all laser emitted by the semiconductor laser can be coupled into the planar optical waveguide chip, and then gradually derived into single-mode laser by the multimode laser, and coupled and output by the single-mode fiber connector 3, so that the high-efficiency utilization of the semiconductor laser is achieved.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A planar optical waveguide chip, comprising: including planar optical waveguide chip main part (1), planar optical waveguide chip main part (1) is used for the laser of butt joint coupling semiconductor laser (2) transmission, planar optical waveguide chip main part (1) is including going into optical end (11) and light-emitting end (10), follows go into optical end (11) extremely light-emitting end (10), waveguide width (12) are the gradient and reduce.
2. The planar lightwave circuit chip of claim 1 wherein: the waveguide thickness (13) is constant from the light input end (11) to the light output end (10).
3. The planar lightwave circuit chip of claim 1 wherein: the waveguide thickness (13) and the waveguide width (12) of the light outlet end (10) are equal.
4. The planar lightwave circuit chip of claim 1 wherein: the light incident end (11) is a long rectangle slightly larger than an emitting region (27) of the semiconductor light emitting cavity surface (28).
5. The planar lightwave circuit chip of claim 1 wherein: the laser light is diffracted from the light inlet end (11) to the light outlet end (10) to be a single-mode waveguide by a multi-mode waveguide.
6. The planar lightwave circuit chip of claim 1 wherein: the planar optical waveguide chip main body (1) is made of quartz glass materials.
7. The planar lightwave circuit chip of claim 1 wherein: the end face of the light inlet end (11) and/or the end face of the light outlet end (10) are/is plated with an antireflection film.
8. The planar lightwave circuit chip of claim 1 wherein: the end face of the light inlet end (11) and/or the end face of the light outlet end (10) are planes, and the end face and the side face of the light inlet end (11), the end face and the side face of the light outlet end (10) and the bottom face of the planar optical waveguide chip main body (1) are perpendicular to each other.
9. The planar lightwave circuit chip of claim 2 wherein: the width of the light inlet end (11) is 100 micrometers, the width of the light outlet end (10) is 3 micrometers, and the waveguide thickness (13) is 3 micrometers.
10. A waveguide-mode single-mode fiber laser, characterized by: the planar optical waveguide chip comprises a semiconductor laser (2), a single-mode optical fiber joint (3) and a planar optical waveguide chip main body (1), wherein the planar optical waveguide chip main body (1) is any one of the above 1-9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111580216A (en) * | 2020-06-11 | 2020-08-25 | 山东明灿光电科技有限公司 | Planar optical waveguide chip and waveguide type single-mode fiber laser |
| CN113517626A (en) * | 2021-05-07 | 2021-10-19 | 武汉汉略达科技股份有限公司 | Novel single-mode high-power laser |
-
2020
- 2020-06-11 CN CN202021065130.0U patent/CN212647049U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111580216A (en) * | 2020-06-11 | 2020-08-25 | 山东明灿光电科技有限公司 | Planar optical waveguide chip and waveguide type single-mode fiber laser |
| CN113517626A (en) * | 2021-05-07 | 2021-10-19 | 武汉汉略达科技股份有限公司 | Novel single-mode high-power laser |
| CN113517626B (en) * | 2021-05-07 | 2024-04-26 | 武汉汉略达科技股份有限公司 | Novel single-mode high-power laser |
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