CN211605165U - Position sensitive detector and mask alignment system - Google Patents

Position sensitive detector and mask alignment system Download PDF

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Publication number
CN211605165U
CN211605165U CN202020625464.2U CN202020625464U CN211605165U CN 211605165 U CN211605165 U CN 211605165U CN 202020625464 U CN202020625464 U CN 202020625464U CN 211605165 U CN211605165 U CN 211605165U
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light
layer
wavelength
transparent substrate
sensitive detector
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高安
孙建超
忻斌杰
陈小娟
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Abstract

The utility model discloses a sensitive detector in position and mask version alignment system, this sensitive detector in position includes: the photosensitive device layer is used for receiving the first wavelength light and converting the first wavelength light into an electric signal; a light conversion structure including a transparent substrate and a first light conversion layer; the transparent substrate is positioned on the photosensitive device layer; the first light conversion layer is provided with a light reflection area and a light conversion light transmission area which are transversely distributed at intervals, the light conversion light transmission area is used for scattering second wavelength light irradiated on the first light conversion layer and converting the second wavelength light into first wavelength light, and the wavelength of the second wavelength light is larger than that of the first wavelength light; the surface of the transparent substrate, which is far away from the first light conversion layer, is an aspheric surface. The embodiment of the utility model provides a technical scheme, light conversion printing opacity district is used for carrying out the scattering to shine the second wavelength light on the first light conversion layer in the first light conversion layer to convert first wavelength light into, reduced the processing degree of difficulty and the manufacturing cost of the position sensitive detector.

Description

Position sensitive detector and mask alignment system
Technical Field
The embodiment of the utility model provides a relate to semiconductor technology field, especially relate to a position sensitive detector and mask version alignment system.
Background
In the photolithography process, alignment marks on the mask and alignment marks on the lithography machine need to be aligned between exposures. Usually, a position sensitive detector is placed on the alignment mark of the lithography machine, and if the position sensitive detector detects the alignment beam passing through the alignment mark on the mask, it indicates that the alignment is completed.
In the position sensitive detector in the prior art, the transparent substrate in the light conversion structure is designed to be in a convex lens shape or liquid is filled between the transparent substrate and the light conversion layer so as to converge the alignment light beam to the light sensitive device layer conversion layer.
The defect existing in the prior art is that the transparent substrate is designed into a convex lens shape or liquid is filled between the transparent substrate and the light conversion layer, so that the position sensitive detector is high in processing difficulty and high in cost.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the utility model provides a position sensitive detector and mask version alignment system has reduced the processing degree of difficulty and the cost comparison of position sensitive detector.
In a first aspect, an embodiment of the present invention provides a position sensitive detector, including:
the photosensitive device layer is used for receiving the first wavelength light and converting the first wavelength light into an electric signal;
a light conversion structure comprising a transparent substrate and a first light conversion layer;
the transparent substrate is positioned above the photosensitive device layer;
the first light conversion layer is positioned on the surface of one side of the transparent substrate, which is far away from the photosensitive device layer, and is provided with a light reflection area and a light conversion light transmission area which are transversely distributed at intervals, wherein the light conversion light transmission area is used for scattering second wavelength light irradiated on the first light conversion layer and converting the second wavelength light into first wavelength light, and the wavelength of the second wavelength light is greater than that of the first wavelength light;
the surface of the transparent substrate, which is far away from one side of the first light conversion layer, is an aspheric surface.
Optionally, a surface of the transparent substrate on a side away from the first light conversion layer is a plane.
Optionally, the light conversion structure further includes a second light conversion layer, located between the first light conversion layer and the transparent substrate, and configured to scatter the light of the second wavelength and convert the light of the second wavelength into the light of the first wavelength.
Optionally, an orthographic projection of the first light conversion layer on the transparent substrate is located within an orthographic projection of the second light conversion layer on the transparent substrate.
Optionally, the photosensitive device layer is provided with a photodiode for converting the light of the first wavelength into an electrical signal.
Optionally, the light conversion structure further comprises an air layer disposed between the transparent substrate and the photosensitive device layer.
Optionally, the light conversion structure further includes a package casing located in the non-photosensitive region of the photosensitive device layer and surrounding the transparent substrate and the side surface of the first light conversion layer.
Optionally, a reflective layer is disposed on a portion of the package housing between the side surface of the transparent substrate and the side surface of the photosensitive device layer.
Optionally, the position-sensitive detector further includes an adhesive layer, located between the package housing and the non-photosensitive region of the photosensitive device layer, for fixing the package housing and the photosensitive device layer.
In a second aspect, an embodiment of the present invention provides a mask alignment system, including:
an illumination member emitting an alignment beam;
the light-transmitting alignment mark is arranged on two sides of the mask plate and is positioned right below the alignment light beam;
a position sensitive detector located directly below the alignment mark, the position sensitive detector being as described in any of the first aspect, for converting the alignment beam transmitted through the light transmissive alignment mark into an electrical signal;
and the signal processing system is electrically connected with the output end of the position sensitive detector and determines the position information of the mask plate based on the electric signal.
The embodiment of the utility model provides a technical scheme, set up first light conversion layer in the surface that photosensitive device layer one side was kept away from to transparent substrate, light conversion printing opacity district is used for will shining the second wavelength light that shines on first light conversion layer in the first light conversion layer and scatter, and convert into first wavelength light, when making the light from transparent substrate outgoing enter into the air, the total reflection can not take place, reach the photosensitive device layer smoothly, the surface that need not to keep away from first light conversion layer one side with transparent substrate sets to the sphere, perhaps fill immersion liquid between transparent substrate and third light conversion layer, assemble the light, the surface that first light conversion layer one side was kept away from to transparent substrate can set to the aspheric surface promptly, thereby the processing degree of difficulty and the manufacturing cost of position sensitive detector have been reduced.
Drawings
FIG. 1 is a schematic diagram of a prior art position sensitive detector;
fig. 2 is a schematic structural diagram of a position sensitive detector according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another position sensitive detector according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a mask alignment system according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As mentioned in the background, the conventional position sensitive detector has high processing difficulty and high cost. Fig. 1 is a schematic structural diagram of a position sensitive detector in the prior art, the position sensitive detector includes a photosensitive device layer 10, a light conversion structure 20 is located on the photosensitive device layer 10, the light conversion structure 20 includes a third light conversion layer 21, an air layer 22, a transparent substrate 23, a slit layer 24 having a light reflecting region 241 and a light transmitting region 242, and a hydrophobic layer 25, the third light conversion layer 21 is used for converting light into light of a first wavelength, wherein an alignment light beam enters from the hydrophobic layer 25, passes through the light transmitting region 242, enters the transparent substrate 23, and enters the air layer 22 from the transparent substrate 23, since an incident angle is larger than a critical angle and a refractive index of the transparent substrate 23 is larger than a refractive index of the air layer 22, total reflection occurs at an interface a and an interface B, in order to allow the alignment light beam to reach the photosensitive device layer 10, one of the method is to set the interface C to be spherical, and the second method is to fill an immersion liquid between the transparent substrate 23, the alignment beam is focused and reaches the photosensitive device layer 10. In the method, the transparent substrate 23 is made of rigid material, and is made into a spherical surface, which is difficult to process and has high cost. The second method is to fill the immersion liquid without leakage, which also makes the processing difficult and the cost is high.
To the above technical problem, the embodiment of the utility model provides a following technical scheme:
fig. 2 is a schematic structural diagram of a position sensitive detector provided in an embodiment of the present invention, referring to fig. 2, the position sensitive detector includes: a photosensitive device layer 10 for receiving the first wavelength light and converting the first wavelength light into an electrical signal; a light conversion structure 20, the light conversion structure 20 comprising a transparent substrate 23 and a first light conversion layer 26, the transparent substrate 23 being located above the light-sensitive device layer 10; the first light conversion layer 26 is located on the surface of the transparent substrate 23 on the side far away from the photosensor layer 10, the first light conversion layer 26 is provided with a light reflecting region 261 and a light conversion light transmitting region 262 which are transversely distributed at intervals, and the light conversion light transmitting region 262 is used for scattering second wavelength light irradiated on the first light conversion layer 26 and converting the second wavelength light into first wavelength light, wherein the wavelength of the second wavelength light is greater than that of the first wavelength light; the surface 231 of the transparent substrate 23 on the side away from the first light conversion layer 26 is aspheric.
Knowingly, the both sides of mask version are provided with alignment mark (RA), and alignment mark aligns with the position sensitive detector on the photoetching machine, and alignment light beam sees through alignment mark, shines the position sensitive detector on the photoetching machine, and position sensitive detector produces the signal of telecommunication, and signal processing system alright according to the signal of telecommunication alright go out the positional information of mask version.
It should be noted that the alignment beam and the reticle exposure beam are the same light source, and therefore the intensity of light is relatively high, and in view of the relatively high sensitivity of the photosensitive device layer 10, the first light conversion layer 26 may be provided with the light reflecting regions 261 and the light conversion transmissive regions 262 which are laterally spaced apart, so that the photosensitive device layer 10 receives light with an intensity matching the sensitivity thereof. It can be known that the exposure light beam is usually ultraviolet light of the second wavelength, but the photosensitive device layer sensitive to ultraviolet light is expensive, so that the photosensitive device layer 10 sensitive to visible light of the first wavelength is selected, and the production cost of the position sensitive detector can be reduced. Specifically, the first light conversion layer 26 is located on a surface of the transparent substrate 23 on a side away from the photosensor layer 10, and the light conversion transparent region 262 in the first light conversion layer 26 is configured to scatter the light of the second wavelength irradiated onto the first light conversion layer 26 and convert the light into the light of the first wavelength. Illustratively, the wavelength of the first wavelength light is about 400 nanometers.
Specifically, the light-reflecting region 261 in the first light conversion layer 26 is used for reflecting the alignment beam, and a light-reflecting metal is disposed in the light-reflecting region 261, and the light-reflecting metal may be metal chromium, for example. The second wavelength light irradiates the light conversion transparent area 262 in the first light conversion layer 26, and the photon conversion crystal is arranged in the light conversion transparent area 262, so that the second wavelength light can be scattered to change the incidence angle of the second wavelength light entering the transparent substrate 23; in a second aspect, the photon-conversion crystal may convert the second wavelength to light of the first wavelength, which may be directly converted to an electrical signal by the photosensitive device layer 10. It should be noted that scattering the second wavelength light by the photon conversion crystal can randomly change the incident angle of the light entering the transparent substrate 23. Therefore, when the light of the first wavelength is emitted from the transparent substrate 23 into the air, a substantial portion of the light of the first wavelength does not undergo total reflection and smoothly reaches the photosensor layer 10. Therefore, the surface of the transparent substrate 23 on the side far away from the first light conversion layer does not need to be set to be a spherical surface, or immersion liquid is filled between the transparent substrate 23 and the third light conversion layer 21 to focus light, so that the processing difficulty and the production cost of the position sensitive detector are reduced.
The embodiment of the utility model provides a technical scheme, set up first light conversion layer 26 in transparent substrate 23 and keep away from the surface on one side of photosensitive device layer 10, light conversion printing opacity district 262 is used for will shining the second wavelength light that shines on first light conversion layer 26 in first light conversion layer 26 and scatter, and convert to first wavelength light, when making the light from transparent substrate 23 outgoing enter into the air, the total reflection can not take place, reach photosensitive device layer 10 smoothly, need not to set the surface that first light conversion layer one side was kept away from transparent substrate 23 to the sphere, perhaps fill immersion liquid between transparent substrate 23 and third light conversion layer 21, assemble light, the surface that first light conversion layer one side was kept away from to transparent substrate 23 can set to the aspheric surface promptly, thereby the processing degree of difficulty and the manufacturing cost of position sensitive detector have been reduced.
Optionally, a surface 231 of the transparent substrate 23 on a side away from the first light conversion layer 26 is planar.
Specifically, the surface 231 of the transparent substrate 23 on the side away from the first light conversion layer 26 is a plane, so that the cutting is facilitated, and the processing difficulty and the production cost of the position sensitive detector are further reduced.
In the above-described technique, the light conversion transparent region 262 in the first light conversion layer 26 may convert the second wavelength into the first wavelength light, and the first wavelength light may be directly converted into an electrical signal by the photosensor layer 10, but inevitably, a part of the second wavelength light may not be converted by the light conversion transparent region 262. In order to solve the above problem, the embodiment of the utility model provides a following technical scheme:
optionally, referring to fig. 3, the light conversion structure 20 further includes a second light conversion layer 27 located between the first light conversion layer 26 and the transparent substrate 23 for scattering the light of the second wavelength and converting the light of the second wavelength into the light of the first wavelength.
Specifically, second light conversion layer 27 includes a photon conversion crystal, and continues to scatter light emitted from first light conversion layer 26, and may convert a portion of the second-wavelength light that is not converted by light conversion transparent region 262 into the first-wavelength light, so as to increase the intensity of the first-wavelength light reaching photosensitive device layer 10, and further increase the intensity of the electrical signal output by photosensitive device layer 10.
To further ensure the conversion efficiency of the second wavelength light into the first wavelength light, optionally, referring to fig. 3, the orthographic projection of first light conversion layer 26 on transparent substrate 23 is located within the orthographic projection of second light conversion layer 27 on transparent substrate 23.
Specifically, the first light conversion layer 26 is provided with a light reflection region 261 and a light conversion transmission region 262 which are laterally spaced apart, and the second-wavelength light which is not totally reflected by the light reflection region 261 can be scattered by the second light conversion layer 27 directly below the light reflection region 261 and converted into the first-wavelength light, so as to increase the intensity of the first-wavelength light reaching the photosensor layer 10, and further increase the intensity of the electrical signal output by the photosensor layer 10.
In the above embodiments, the photosensitive device layer 10 is configured to receive light of a first wavelength and convert the light into an electrical signal. In particular, the photosensitive device layer 10 is provided with a photodiode for converting light of a first wavelength into an electrical signal.
Among them, a photodiode (photodiode) is a photodetector that can convert light into a current or voltage signal, and is inexpensive, which can further reduce the production cost of a position sensitive detector.
In above-mentioned technical scheme, transparent substrate 23 is located photosensitive device layer 10, if transparent substrate 23 and photosensitive device layer 10 direct contact, can lead to photosensitive device layer 10's electrical property to be influenced, influences photosensitive device layer 10 and receives first wavelength light to the efficiency of conversion to the signal of telecommunication, consequently, the embodiment of the utility model provides a following technical scheme: optionally, referring to fig. 3, the light conversion structure 20 further comprises an air layer 28 disposed between the transparent substrate 23 and the photosensitive device layer 10. Specifically, the transparent substrate 23 is not in direct contact with the photosensitive device layer 10, but an air layer 28 is provided, so that the photosensitive device layer 10 can be protected, and the direct contact between the transparent substrate 23 and the photosensitive device layer 10 is avoided, and the contact surface between the photosensitive device layer 10 and the transparent substrate 23 is prevented from being worn, so that the efficiency of receiving the first-wavelength light by the photosensitive device layer 10 and converting the first-wavelength light into an electric signal is influenced.
Optionally, the light conversion structure 20 further includes an encapsulation shell 29 located in the non-photosensitive area a1 of the photosensitive device layer 10 and surrounding the transparent substrate 23 and the side of the first light conversion layer 26.
In particular, the encapsulation housing 29 serves to encapsulate and protect the film layers within the light converting structure 20.
In the above-described embodiment, the first wavelength light enters the air layer 28 from the transparent substrate 23, and is scattered by the second light conversion layer 27 and the first light conversion layer 26, so that the first wavelength light having a plurality of propagation directions is obtained. To the first wavelength light that can not direct irradiation photosensitive device layer 10, the embodiment of the utility model provides a following technical scheme:
alternatively, referring to fig. 3, a portion of the package housing 29 between the side of the transparent substrate 23 and the side of the photosensitive device layer 10 is provided with a reflective layer 291. Reflective layer 291 may reflect light of the first wavelength impinging on its surface onto photosensitive device layer 10 to increase the intensity of light of the first wavelength reaching photosensitive device layer 10, further increasing the intensity of the electrical signal output by photosensitive device layer 10.
Optionally, the position sensitive detector further comprises an adhesive layer (not shown) between the encapsulation shell 29 and the non-photosensitive area a1 of the photosensitive device layer 10 for securing the encapsulation shell 29 and the photosensitive device layer 10. Specifically, the package housing 29 and the photosensitive device layer 10 are fixed together by an adhesive layer, thereby completing the packaging of the position sensitive detector.
Optionally, the position-sensitive detector further includes a hydrophobic layer 25, located on a surface of the first light conversion layer 26 on a side away from the transparent substrate 23, for protecting each film layer in the position-sensitive detector from water vapor, so as to affect a conversion efficiency of the photosensitive device layer 10 for converting the first wavelength light into an electrical signal.
The embodiment of the utility model provides a mask version alignment system is still provided, fig. 4 is the embodiment of the utility model provides a mask version alignment system's schematic structure diagram. Referring to fig. 4, the system includes: an illumination member 30 emitting an alignment light beam; the device comprises a mask plate 40, wherein light-transmitting alignment marks RA are arranged on two sides of the mask plate 40 and are positioned right below alignment light beams; a position sensitive detector 50 located right below the alignment mark, the position sensitive detector 50 being as described in any of the above technical solutions, for converting the alignment beam passing through the transparent alignment mark RA into an electrical signal; and a signal processing system 60 electrically connected to the output end of the position sensitive detector 50, for determining the position information of the mask 40 based on the electrical signal.
The mask alignment system provided by the utility model comprises the position sensitive detector in the above embodiment, the light-converting transparent region 262 in the first light-converting layer 26 of the position sensitive detector is used for scattering the light of the second wavelength irradiated onto the first light-converting layer 26, and is converted into light of the first wavelength, so that the light emitted from the transparent substrate 23 can smoothly reach the photosensor layer 10 without total reflection when entering the air, without setting the surface of the transparent substrate 23 far away from the first light conversion layer as a spherical surface, or an immersion liquid is filled between the transparent substrate 23 and the third light-converting layer 21, the light is condensed, that is, the surface of the transparent substrate 23 on the side far away from the first light conversion layer can be set to be an aspheric surface, so that the processing difficulty and the production cost of the position sensitive detector are reduced, and the processing difficulty and the production cost of the mask alignment system are further reduced.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.

Claims (10)

1. A position sensitive detector, comprising:
the photosensitive device layer is used for receiving the first wavelength light and converting the first wavelength light into an electric signal;
a light conversion structure comprising a transparent substrate and a first light conversion layer;
the transparent substrate is positioned above the photosensitive device layer;
the first light conversion layer is positioned on the surface of one side of the transparent substrate, which is far away from the photosensitive device layer, and is provided with a light reflection area and a light conversion light transmission area which are transversely distributed at intervals, wherein the light conversion light transmission area is used for scattering second wavelength light irradiated on the first light conversion layer and converting the second wavelength light into first wavelength light, and the wavelength of the second wavelength light is greater than that of the first wavelength light;
the surface of the transparent substrate, which is far away from one side of the first light conversion layer, is an aspheric surface.
2. The position sensitive detector of claim 1, wherein a surface of the transparent substrate on a side away from the first light converting layer is planar.
3. The position sensitive detector of claim 1, wherein the light converting structure further comprises a second light converting layer between the first light converting layer and the transparent substrate for scattering light of the second wavelength and converting the light to light of the first wavelength.
4. The position-sensitive detector of claim 3, wherein an orthographic projection of the first light-converting layer on the transparent substrate is within an orthographic projection of the second light-converting layer on the transparent substrate.
5. The position sensitive detector of claim 1, wherein the photosensitive device layer is provided with a photodiode for converting the light of the first wavelength into an electrical signal.
6. The position sensitive detector of claim 1, wherein the light converting structure further comprises an air layer disposed between the transparent substrate and the light-sensing device layer.
7. The position sensitive detector of claim 6, wherein the light conversion structure further comprises an encapsulation shell located in the non-photosensitive region of the photosensitive device layer and surrounding the transparent substrate and the side of the first light conversion layer.
8. The position-sensitive detector of claim 7, wherein a portion of the encapsulation between the side of the transparent substrate and the side of the photosensor layer is provided with a reflective layer.
9. The position sensitive detector of claim 7, further comprising an adhesive layer between the package housing and the non-photosensitive region of the photosensitive device layer for securing the package housing and the photosensitive device layer.
10. A reticle alignment system, comprising:
an illumination member emitting an alignment beam;
the light-transmitting alignment mark is arranged on two sides of the mask plate and is positioned right below the alignment light beam;
a position sensitive detector directly below the alignment mark, the position sensitive detector according to any one of claims 1-9 for converting the alignment beam transmitted through the transparent alignment mark into an electrical signal;
and the signal processing system is electrically connected with the output end of the position sensitive detector and determines the position information of the mask plate based on the electric signal.
CN202020625464.2U 2020-04-23 2020-04-23 Position sensitive detector and mask alignment system Active CN211605165U (en)

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CN202020625464.2U CN211605165U (en) 2020-04-23 2020-04-23 Position sensitive detector and mask alignment system

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Application Number Priority Date Filing Date Title
CN202020625464.2U CN211605165U (en) 2020-04-23 2020-04-23 Position sensitive detector and mask alignment system

Publications (1)

Publication Number Publication Date
CN211605165U true CN211605165U (en) 2020-09-29

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