CN209088930U - RF Amplifier Module and communication terminal - Google Patents
RF Amplifier Module and communication terminal Download PDFInfo
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- CN209088930U CN209088930U CN201821957192.5U CN201821957192U CN209088930U CN 209088930 U CN209088930 U CN 209088930U CN 201821957192 U CN201821957192 U CN 201821957192U CN 209088930 U CN209088930 U CN 209088930U
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Abstract
The utility model embodiment is related to electronic technology field, discloses a kind of RF Amplifier Module and communication terminal.In the utility model, RF Amplifier Module includes: input balun, output balun and power amplifier module；The input balun and the output balun are realized using integrated passive devices technique；The power amplifier module is set on substrate, and the input balun is electrically connected by the power amplifier module with the output balun.The input balun and output balun of the utility model are realized using integrated passive devices technique, so that the cost of RF Amplifier Module reduces, and the processing technology of integrated passive devices technique is finer, the area of integrated balun module can be done very small, reduce the area of RF Amplifier Module.
Description
Technical field
The utility model embodiment is related to electronic technology field, in particular to a kind of RF Amplifier Module and communication terminal.
Background technique
In wireless communications, RF power amplification be widely used in amplify radiofrequency signal reach required power grade, with
In the radio transmission of antenna.RF power amplification as core devices, make great efforts to optimize all the time by industry.Especially with comprehensive frequency
Gradually adopt, demand of the antenna to the output power of RF power amplification is higher and higher, proposes the design of RF power amplification into one
The demand of step.
RF power amplification can be divided into single-ended amplifier and push-pull amplifier according to the framework of its output stage amplifier circuit.It is passing
In the wireless communications products of system, if the RF power amplification used in mobile phone is mostly single-ended amplifier, output matching circuit is implemented in
On substrate, generally it is made of the wire-wound inductor of capacitor and inductor and substrate, the substrate of single-ended amplifier mostly uses 4 layers of substrate,
The area of single-ended amplifier based on 4 laminar substrates is smaller, and structure is simple, is easier to realize, and cost is relatively low, but because single-ended
The radio-frequency power of amplifier is not high, inefficient, and in the limiting case, heat dissipation can be poor.It therefore, is raising wireless communications products
Performance, industry usually considers using push-pull amplifier.
The output stage of push-pull amplifier generally has two-way amplifying device, when the electric current of operation all the way, the road increases, separately
It correspondingly reduces all the way；Therefore the state of two-way is being converted in turn, seems to push away all the way, another way is being drawn, and is completed jointly
The output task of electric current.The output stage of push-pull amplifier is realized by two-way power amplifier.Pass through an input in the input of output stage
Balun realize phase difference form, output stage output end further through balun carry out signal combining.With single-ended amplification
Device is compared, and push-pull amplifier has High Linear power and high efficiency, but since output balun is real by way of in substrate coiling
It is existing, and the ratio due to balun main coil and from coil will generally reach 2:1 or more, and push-pull amplifier wants the number of plies of substrate
Ask higher, generally 6 laminar substrates.The input balun of output stage is integrated on chip simultaneously, leads to the chip face of push-pull amplifier
Product is larger, and it is excessively high to also result in cost, cannot be widely used in wireless communications products.
Utility model content
The utility model embodiment is designed to provide a kind of RF Amplifier Module and communication terminal, to reduce radio frequency
The chip area of amplification module reduces product cost.
In order to solve the above technical problems, the embodiments of the present invention provides a kind of RF Amplifier Module, comprising: defeated
Enter balun, output balun and power amplifier module；
The input balun and the output balun are realized using integrated passive devices technique；
The power amplifier module is set on substrate, and the input balun passes through the power amplifier module and output balun electricity
Connection.
The embodiments of the present invention additionally provides a kind of communication terminal, comprising:
RF Amplifier Module as described above.
The utility model embodiment in terms of existing technologies, because of input balun in RF Amplifier Module and defeated
Balun is realized using integrated passive devices technique out, and the processing technology of integrated passive devices technique is finer, can will input
The area of balun and output balun does very small, reduces the area of RF Amplifier Module, and integrating passive device
The processing cost of the processing technology of part technique is low, but also the cost of RF Amplifier Module reduces.
In addition, the power amplifier module includes the first amplifier, the second amplifier, the both ends of the main coil of the input balun
Be electrically connected respectively with the input terminal of the input terminal of first amplifier and second amplifier, first amplifier it is defeated
The output end of outlet and second amplifier is electrically connected with the both ends of the main coil of the output balun respectively.
In addition, the RF Amplifier Module further includes the first signal input part, the power amplifier module further includes third amplification
Device, first signal input part are electrically connected with one end of the slave coil of the input balun, the slave coil of the input balun
The other end be electrically connected with the third amplifier.
In addition, the RF Amplifier Module further includes first capacitor, one end of the first capacitor and first signal
Input terminal electrical connection, the other end ground connection of the first capacitor.
In addition, the RF Amplifier Module further includes the first signal output end and second signal output end, the output bar
The both ends of the slave coil of human relations are electrically connected with first signal output end and the second signal output end respectively.
In addition, the RF Amplifier Module further includes the second capacitor, one end of second capacitor and first signal
Output end electrical connection, the other end ground connection of second capacitor.
In addition, the RF Amplifier Module further includes RF switch chip, the RF switch chip and second letter
The electrical connection of number output end.
In addition, the RF Amplifier Module further includes second signal input terminal, the second signal input terminal with it is described defeated
The centre cap electrical connection of the main coil of balun out.
In addition, the RF Amplifier Module further includes third capacitor, one end of the third capacitor and the second signal
Input terminal electrical connection, the other end ground connection of the third capacitor.
Detailed description of the invention
One or more embodiments are illustrated by the picture in corresponding attached drawing, these exemplary theorys
The bright restriction not constituted to embodiment, the element in attached drawing with same reference numbers label are expressed as similar element, remove
Non- to have special statement, composition does not limit the figure in attached drawing.
Fig. 1 is the structural schematic diagram of the RF Amplifier Module of the embodiments of the present invention 1；
Fig. 2 is the structural schematic diagram of the RF Amplifier Module of the embodiments of the present invention 2.
Specific embodiment
To keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, below in conjunction with attached drawing to this
Each embodiment of utility model is explained in detail.However, it will be understood by those skilled in the art that practical at this
In novel each embodiment, in order to make the reader understand this application better, many technical details are proposed.But even if do not have
It is claimed that the application also may be implemented in these technical details and various changes and modifications based on the following respective embodiments
Technical solution.Below the division of each embodiment be for convenience, should not specific implementation structure to the utility model
At any restriction, each embodiment can be combined with each other mutual reference under the premise of reconcilable.
The first embodiment of the utility model is related to a kind of RF Amplifier Module, as shown in Figure 1, RF Amplifier Module packet
Integrated balun module 1 and power amplifier module 2 are included, balun module 1 is integrated and is realized using integrated passive devices technique, integrate balun module
Including input balun 11 and output balun 12.Power amplifier module 2 is set on substrate, input balun 11 by power amplifier module 2 with it is defeated
Balun 12 is electrically connected out.In practical applications, input balun 11 and output balun 12 can be set to same according to actual needs
On a passive module, it can also be respectively arranged on different passive modules, be not limited thereto.
Balun is a kind of to be converted to difference output by will match input and realize balanced transmission line circuit and imbalance biography
The wide band radio-frequency line transformer of connection between defeated line circuit.The function of balun be to make system have different impedances or with
Difference/single-ended signaling is compatible, and for Modern Communication System such as mobile phone and data transmission networks.
RF Amplifier Module realizes the difference form of phase in importation by the balun of an input, in output par, c
The balun exported further through one carries out the combining of signal.In the prior art, the balun of the input in RF Amplifier Module and defeated
Balun out all realizes by way of substrate coiling, and since the ratio of balun will generally reach 2:1 or more, right
The number of plies of substrate is more demanding, and the number of plies for the substrate that the balun of input and the balun of output occupy just reaches 3 layers.
In electronic product, integrated passive devices (Integrated Passive Device, IPD) technology can be incited somebody to action
Passive device integration forms functionalization substrate to substrate interior.And it uses 30%~50% on the PCB (printed circuit board) of substrate
Solder joint belong to passive device, not only area occupied, also reduces the reliability of system.Surface Mount is discrete on the alternative substrate of IPD
Element reduces area, simplified Surface Mount step, raising integrated level that discrete component occupies, and surface is avoided to be welded on radio band band
The ghost effect come.
It is currently available that IPD technology is divided into thick film technology and thin film technique.In the present embodiment, integrates balun module 1 and use
Low-temperature co-fired ceramics (Low Temperature Co-fired Ceramic LTCC) technology, low-temperature co-fired ceramics
(LTCC) it is typical thick film IPD technology, is widely used in commercial communication, in military electronic, which has become passive collection
At mainstream technology, become the developing direction in passive element field and the point of economic increase of new element industry.
It is also that the input balun for needing most more laminar substrates and output balun are adopted most complicated part in RF Amplifier Module
It is realized with integrated passive devices technique, therefore compared with traditional board structure, the substrate of the RF Amplifier Module of the present embodiment
It can greatly simplify, balun occupies before the number of plies of substrate can be reduced at least 3 layers.Therefore, with traditional push-pull power
Amplification module design is compared, and the chip area that is made into of encapsulation RF Amplifier Module can be substantially reduced, reduce area be about 30% with
On.
The RF Amplifier Module of present embodiment is compared with the existing push-pull power amplifier module of industry, the present embodiment
Input balun 11 and output balun 12 are integrated into the integrated balun module of independent LTCC, since cost is relatively low by LTCC, and
And processing technology is finer, it is possible to the area of integrated balun module is made very small, so that RF Amplifier Module
Area reduces, but also the cost of RF Amplifier Module is minimized.
The second embodiment of the utility model is related to a kind of RF Amplifier Module.Second embodiment and the first embodiment party
Formula is roughly the same, is in place of the main distinction: as shown in Fig. 2, RF Amplifier Module further includes RF switch chip 3, Yi Ji
One signal input part 13, second signal input terminal 14, the first signal output end 15 and second signal output end 16, first capacitor
17, the second capacitor 18, third capacitor 19.
More specifically, power amplifier module 2 includes the first amplifier 21, the second amplifier 22 and third amplifier 23, input bar
The both ends of the main coil 11b of human relations 11 are electrically connected with the input terminal of the input terminal of the first amplifier 21 and the second amplifier 22 respectively,
The output end of the output end of first amplifier 21 and the second amplifier 22 is electric with the both ends of the main coil 12b of output balun 12 respectively
Connection.
First signal input part 13 is electrically connected with one end of the slave coil 11a of input balun 11, the first signal input part 13
For accessing the first external voltage signal, power for input balun 11.Input the other end and third of the slave coil 11a of balun 11
Amplifier 23 is electrically connected.The both ends for exporting the slave coil 12a of balun 12 are defeated with the first signal output end 15 and second signal respectively
Outlet 16 is electrically connected.
One end of first capacitor 17 is electrically connected with the first signal input part 13, the other end ground connection of first capacitor 17.Second
One end of capacitor 18 is electrically connected with the first signal output end 15, the other end ground connection of the second capacitor 18.One end of third capacitor 19
It is electrically connected with second signal input terminal 14, the other end ground connection of third capacitor 19.
RF switch chip 3 is electrically connected with second signal output end 16.
Second signal input terminal 14 is electrically connected with the centre cap of the main coil 12a of output balun 12.Second signal input
End 14 is that output balun 12 is powered for inputting the second external voltage signal.
Due to being also to need most the input balun and output bar of more laminar substrates most complicated part in RF Amplifier Module
Human relations are with integrated passive devices with the realization of integrated passive devices technique, therefore compared with 6 traditional laminar substrate structures, the present embodiment
The substrate of RF Amplifier Module can greatly simplify, and balun occupies before the number of plies of substrate can be reduced at least 3 layers are with by radio frequency
The number of plies of the substrate of amplification module is reduced to 4 layers or less by original 6 layers.Meanwhile with traditional push-pull power amplification mould
Block design is compared, and the chip area that encapsulation RF Amplifier Module is made into also is substantially reduced, and reducing area is about 30% or more.
Its cost relatively see the table below it is shown, from following table content it is known that the RF Amplifier Module of the utility model is also big
Save cost greatly:
The third embodiment of the utility model is related to a kind of communication terminal, and communication terminal includes in second embodiment
RF Amplifier Module.
It will be understood by those skilled in the art that the respective embodiments described above are to realize the specific implementation of the utility model
Example, and in practical applications, can to it, various changes can be made in the form and details, without departing from the spirit of the utility model
And range.
Claims (10)
1. a kind of RF Amplifier Module, which is characterized in that the RF Amplifier Module includes: input balun, output balun and function
Amplification module；
The input balun and the output balun are realized using integrated passive devices technique；
The power amplifier module is set on substrate, and the input balun is electrically connected by the power amplifier module and the output balun
It connects.
2. RF Amplifier Module according to claim 1, which is characterized in that the power amplifier module include the first amplifier,
It is put respectively with the input terminal of first amplifier and described second at the both ends of second amplifier, the main coil of the input balun
The output end of the input terminal electrical connection of big device, the output end of first amplifier and second amplifier respectively with it is described defeated
The both ends electrical connection of the main coil of balun out.
3. RF Amplifier Module according to claim 2, which is characterized in that the RF Amplifier Module further includes the first letter
Number input terminal, the power amplifier module further includes third amplifier, the slave line of first signal input part and the input balun
One end of circle is electrically connected, and the other end of the slave coil of the input balun is electrically connected with the third amplifier.
4. RF Amplifier Module according to claim 3, which is characterized in that the RF Amplifier Module further includes the first electricity
Hold, one end of the first capacitor is electrically connected with first signal input part, the other end ground connection of the first capacitor.
5. RF Amplifier Module according to claim 1, which is characterized in that the RF Amplifier Module further includes the first letter
Number output end and second signal output end, the both ends of the slave coil of the output balun respectively with first signal output end and
The second signal output end electrical connection.
6. RF Amplifier Module according to claim 5, which is characterized in that the RF Amplifier Module further includes the second electricity
Hold, one end of second capacitor is electrically connected with first signal output end, the other end ground connection of second capacitor.
7. RF Amplifier Module according to claim 5, which is characterized in that the RF Amplifier Module further includes that radio frequency is opened
Chip is closed, the RF switch chip is electrically connected with the second signal output end.
8. RF Amplifier Module according to claim 2, which is characterized in that the RF Amplifier Module further includes the second letter
Number input terminal, the second signal input terminal are electrically connected with the centre cap of the main coil of the output balun.
9. RF Amplifier Module according to claim 8, which is characterized in that the RF Amplifier Module further includes third electricity
Hold, one end of the third capacitor is electrically connected with the second signal input terminal, the other end ground connection of the third capacitor.
10. a kind of communication terminal, which is characterized in that the communication terminal includes putting according to claim 1 to radio frequency described in 9
Big module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821957192.5U CN209088930U (en) | 2018-11-26 | 2018-11-26 | RF Amplifier Module and communication terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821957192.5U CN209088930U (en) | 2018-11-26 | 2018-11-26 | RF Amplifier Module and communication terminal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209088930U true CN209088930U (en) | 2019-07-09 |
Family
ID=67125550
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821957192.5U Active CN209088930U (en) | 2018-11-26 | 2018-11-26 | RF Amplifier Module and communication terminal |
Country Status (1)
| Country | Link |
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| CN (1) | CN209088930U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109462411A (en) * | 2018-11-26 | 2019-03-12 | 锐石创芯（深圳）科技有限公司 | RF Amplifier Module and communication terminal |
-
2018
- 2018-11-26 CN CN201821957192.5U patent/CN209088930U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109462411A (en) * | 2018-11-26 | 2019-03-12 | 锐石创芯（深圳）科技有限公司 | RF Amplifier Module and communication terminal |
| WO2020108386A1 (en) * | 2018-11-26 | 2020-06-04 | 锐石创芯（深圳）科技有限公司 | Radio frequency amplification module and communications terminal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Patentee after: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Address before: 518035 Room 203, building e, Shenzhen International Innovation Center, No. 1006, Shennan Avenue, Huafu street, Futian District, Shenzhen, Guangdong Province Patentee before: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE |
|
| CP03 | Change of name, title or address |