CN208336222U - A kind of high brightness RGB LED encapsulation structure based on micro display chip - Google Patents
A kind of high brightness RGB LED encapsulation structure based on micro display chip Download PDFInfo
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- CN208336222U CN208336222U CN201820728023.8U CN201820728023U CN208336222U CN 208336222 U CN208336222 U CN 208336222U CN 201820728023 U CN201820728023 U CN 201820728023U CN 208336222 U CN208336222 U CN 208336222U
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- Prior art keywords
- micro display
- rgb led
- fixedly installed
- pedestal
- transmission lens
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims abstract description 30
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 27
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052742 iron Inorganic materials 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000741 silica gel Substances 0.000 claims abstract description 9
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 239000012141 concentrate Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The high brightness RGB LED encapsulation structure based on micro display chip that the utility model discloses a kind of, including substrate and micro display RGB LED light, the micro display RGB LED light is set to substrate inner cavity and is installed on upper surface, the micro display RGB LED light bottom is fixedly installed pedestal, the pedestal two sides are fixedly installed with bracket, the pedestal upper surface is fixedly installed transmission lens, transmission lens internal base upper surface is fixedly installed with reflector block, the reflector block is fixedly installed with heat-radiating substrate far from the side of pedestal, the heat-radiating substrate is fixedly installed micro display RGB LED chip far from the side of reflector block, one layer of silica gel is arranged in the micro display RGB LED chip outer surface, the micro display RGB LED chip two sides are provided with iron wire, the iron Silk runs through far from one end of micro display RGB LED chip is installed on transmission lens.The utility model mechanism is simple, easy to use, effectively can effectively concentrate in together the light that RGB LED chip issues, greatly improve brightness.
Description
Technical field
The utility model relates to RGB LED light source technical field, specially a kind of high brightness RGB based on micro display chip
LED encapsulation structure.
Background technique
The usually used light source of projection display system is extra-high-pressure mercury vapour lamp (UHP), metal halide lamp, xenon lamp and halogen
Lamp.The mankind always search for and develop solid luminescence light source for many years, with the exploitation and semiconductor fabrication process of luminescent material
Improvement, semiconductor lighting with light-emitting diodes tube efficiency be continuously improved.Currently, extra-high-pressure mercury vapour lamp is the mainstream light of projection arrangement
Source.Light emitting diode (abbreviation LED) is a kind of semiconductor devices for directly converting electrical energy into luminous energy.LED has operating voltage
It is low, power consumption is small, luminous efficiency is high, the response time is short, vibration resistance, stability are high, the series of advantages such as small in size, be widely applied
In every field such as indicator light, LCD backlight, LED display, decoration and solid-state lightings.In recent years, with semiconductor light emitting material
The development of material, LED are increasingly attracted attention by common people in various lighting areas.
Existing RGB LED encapsulation structure exists following insufficient: 1, many RGB LED encapsulation structures be all it is single into
Row encapsulation, concentrate to light source the function of transmitting；2, the heat dissipation of many RGB LED encapsulation structures all only letters in the market
Single aperture heat dissipation effect is not significant.
Utility model content
The high brightness RGB LED encapsulation structure based on micro display chip that the purpose of this utility model is to provide a kind of, with
Solve the problems mentioned above in the background art.
To achieve the above object, the utility model provides the following technical solutions: a kind of high brightness based on micro display chip
RGB LED encapsulation structure, including substrate and micro display RGB LED light, the micro display RGB LED light are set to substrate inner cavity peace
Loaded on upper surface, the micro display RGB LED light bottom is fixedly installed pedestal, and the pedestal two sides are fixedly installed with bracket,
The pedestal upper surface is fixedly installed transmission lens, and transmission lens internal base upper surface is fixedly installed with reflector block,
The reflector block is fixedly installed with heat-radiating substrate far from the side of pedestal, and the heat-radiating substrate is set far from the side fixation of reflector block
It is equipped with micro display RGB LED chip, one layer of silica gel, the micro display RGB is arranged in the micro display RGB LED chip outer surface
LED chip two sides are provided with iron wire, and the iron wire runs through far from one end of micro display RGB LED chip is installed on transmission lens,
The iron wire and transmission lens junction are fixedly installed sealing ring.
Preferably, the reflective block of material is aluminium material, and the reflector block surface is coated with one layer of silver.
Preferably, the transmission lens shape is half arc, and the transmission lens material is high light transmission crystal material.
Preferably, the susceptor surface offers several through-holes, and the through-hole at least opens up two.
Preferably, the substrate surface is coated with one layer of silica gel, and the silica gel thickness of the substrate surface is less than micro display RGB
The height of LED light.
Compared with prior art, the utility model has the beneficial effects that
1, the utility model is by being arranged reflector block in micro display RGB LED chip bottom, while in micro display RGB LED
Transmission lens are fixedly mounted above chip, it, in this way can be effectively by micro display RGB by applying one layer of silver on reflector block surface
Some light that LED chip issues are reflected, and since transmission lens are high light transmission crystal materials, also there is certain absorption to light source
Effect, thus can effectively the wide part that micro display RGB LED chip issues be concentrated in together and be carried out by saturating
Light microscopic piece is launched, and whole brightness is greatly improved, and avoids the waste of light source.
2, heat outflow is radiated, is led to by the way that iron wire is arranged in micro display RGB LED chip two sides by the utility model
It crosses and directly radiates in micro display RGB LED chip bottom setting heat-radiating substrate, by opening up through-hole on pedestal, by following
Ring wind radiates to micro display RGB LED chip, can increase micro display RGB LED core significantly in this way by radiating three times
The service life of piece.
Detailed description of the invention
Fig. 1 is a kind of high brightness RGB LED encapsulation structure overall structure signal based on micro display chip of the utility model
Figure；
Fig. 2 is a kind of high brightness RGB LED encapsulation structure top view based on micro display chip of the utility model.
In figure: 1- substrate；2- micro display RGB LED light；3- bracket；4- pedestal；5- micro display RGB LED chip；6- is anti-
Light block；7- heat-radiating substrate；8- through-hole；9- sealing ring；10- iron wire；11- transmission lens；12- fluorescent glue；13- silica gel.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
The utility model provides a kind of technical solution referring to FIG. 1-2: a kind of high brightness RGB based on micro display chip
LED encapsulation structure, including substrate 1 and micro display RGB LED light 2, the micro display RGB LED light 2 are set to 1 inner cavity of substrate peace
Loaded on upper surface, 2 bottom of micro display RGB LED light is fixedly installed pedestal 4, and 4 two sides of pedestal are fixedly installed with branch
Frame 3,4 upper surface of pedestal are fixedly installed transmission lens 11, and 11 internal base of transmission lens, 4 upper surface is fixedly mounted
There is a reflector block 6, the reflector block 6 is fixedly installed with heat-radiating substrate 7 far from the side of pedestal 4, and the heat-radiating substrate 7 is far from reflective
The side of block 6 is fixedly installed micro display RGB LED chip 5, and described one layer of the setting of 5 outer surface of micro display RGB LED chip glimmering
Optical cement 12,5 two sides of micro display RGB LED chip are provided with iron wire 10, and the iron wire 10 is far from micro display RGB LED chip
5 one end is fixedly installed sealing ring 9 with 11 junction of transmission lens through transmission lens 11, the iron wire 10 is installed on.
6 material of reflector block is aluminium material, and 6 surface of reflector block is coated with one layer of silver, so effectively by micro display
The light that RGB LED chip issues, which is reflected on transmission lens, to be launched, and brightness is greatly improved；Outside the transmission lens 11
Shape is half arc, and 11 material of transmission lens is high light transmission crystal material, can be very good to collect light source, light source is made to concentrate hair
It penetrates；4 surface of pedestal offers several through-holes 8, and the through-hole 8 at least opens up two, can be to micro display RGB LED chip
It radiates；1 surface of substrate is coated with one layer of silica gel 13, and 13 thickness of silica gel on 1 surface of substrate is less than micro display RGB
The height of LED light 2 plays secondary encapsulation to micro display RGB LED chip in this way, greatly increases the effect of encapsulation.
Working principle: it will be lighted by micro display RGB LED chip 5 after being powered to substrate 1, due to micro display RGB
The light that LED chip 5 issues does not issue vertically, is at this moment sent out by the silver layer on reflector block 6 micro display RGB LED chip 5
Light source out is reflected, and is collected again by transmission lens 11 so that the light that micro display RGB LED chip 5 issues is concentrated from saturating
It is projected at light microscopic piece 11, this avoid the wastes of light source, also effectively raise whole brightness, heat-radiating substrate 7 after energization
Can carry out certain heat dissipation to micro display RGB LED chip 5, by 5 two sides of micro display RGB LED chip be arranged iron wire 10 into
The secondary heat dissipation of row plays third time heat dissipation to micro display RGB LED chip 5 in this way by opening up several through-holes 8 in pedestal 4, this
Sample greatly improves the service life of micro display RGB LED chip 5.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (5)
1. a kind of high brightness RGB LED encapsulation structure based on micro display chip, including substrate (1) and micro display RGB LED light
(2), it is characterised in that: the micro display RGB LED light (2) is set to substrate (1) inner cavity and is installed on upper surface, the micro display
RGB LED light (2) bottom is fixedly installed pedestal (4), and pedestal (4) two sides are fixedly installed with bracket (3), the pedestal
(4) upper surface is fixedly installed transmission lens (11), and transmission lens (11) internal base (4) upper surface is fixedly installed with instead
Light block (6), the reflector block (6) are fixedly installed with heat-radiating substrate (7) far from the side of pedestal (4), and the heat-radiating substrate (7) is remote
Side from reflector block (6) is fixedly installed micro display RGB LED chip (5), micro display RGB LED chip (5) appearance
One layer of fluorescent glue (12) is arranged in face, and micro display RGB LED chip (5) two sides are provided with iron wire (10), the iron wire (10)
One end far from micro display RGB LED chip (5), which is run through, to be installed on transmission lens (11), the iron wire (10) and transmission lens
(11) junction is fixedly installed sealing ring (9).
2. a kind of high brightness RGB LED encapsulation structure based on micro display chip according to claim 1, feature exist
In: reflector block (6) material is aluminium material, and reflector block (6) surface is coated with one layer of silver.
3. a kind of high brightness RGB LED encapsulation structure based on micro display chip according to claim 1, feature exist
In: transmission lens (11) shape is half arc, and transmission lens (11) material is high light transmission crystal material.
4. a kind of high brightness RGB LED encapsulation structure based on micro display chip according to claim 1, feature exist
In: pedestal (4) surface offers several through-holes (8), and the through-hole (8) at least opens up two.
5. a kind of high brightness RGB LED encapsulation structure based on micro display chip according to claim 1, feature exist
In: substrate (1) surface is coated with one layer of silica gel (13), and silica gel (13) thickness on substrate (1) surface is less than micro display RGB
The height of LED light (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820728023.8U CN208336222U (en) | 2018-05-16 | 2018-05-16 | A kind of high brightness RGB LED encapsulation structure based on micro display chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820728023.8U CN208336222U (en) | 2018-05-16 | 2018-05-16 | A kind of high brightness RGB LED encapsulation structure based on micro display chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208336222U true CN208336222U (en) | 2019-01-04 |
Family
ID=64777489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820728023.8U Expired - Fee Related CN208336222U (en) | 2018-05-16 | 2018-05-16 | A kind of high brightness RGB LED encapsulation structure based on micro display chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208336222U (en) |
-
2018
- 2018-05-16 CN CN201820728023.8U patent/CN208336222U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 523000 2nd, 3rd and 5th floors of Building E, Xinmusheng Low Carbon Science Park, Pinghu Street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Xinguangtai Electronic Technology Co.,Ltd. Address before: 518111 Building 2, 3 and 5, E, Xinmusheng Low Carbon Science Park, Pinghu Street, Longgang District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN KN-LIGHT ELECTRONIC TECHNOLOGY CO.,LTD. |
|
| CP03 | Change of name, title or address | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190104 |