CN208111471U - A kind of upside-down mounting RCLED based on MJT technology - Google Patents
A kind of upside-down mounting RCLED based on MJT technology Download PDFInfo
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- CN208111471U CN208111471U CN201820598468.9U CN201820598468U CN208111471U CN 208111471 U CN208111471 U CN 208111471U CN 201820598468 U CN201820598468 U CN 201820598468U CN 208111471 U CN208111471 U CN 208111471U
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Abstract
The utility model discloses a kind of upside-down mounting RCLED based on MJT technology, including circular substrate, upper Prague transmitting mirror, n type gallium nitride, Multiple-quantum hydrazine, p-type gallium nitride, lower Prague transmitting mirror, Sn/Au eutectic weldering and aluminum nitride ceramic substrate, electric current enters P-type electrode by the pad below aluminum nitride ceramic substrate, the sub- trap of hole injection fluence, with the electronics recombination luminescence from n-type region, the not compound hole finished for flowing into n type gallium nitride flows into next PN junction by metal interconnection, and it is compound with electronics to be re-introduced into Quantum Well.The light of the compound sending in the quantum well region of two PN junctions, by the mode modification of the upper Bragg mirror of the lower Bragg reflector and antiradar reflectivity of high reflectance, generate the very narrow monochromatic light radiation of spectrum half-peak breadth, it is radiate by graph substrate and surface texture, two active areas have dispersed electric current injection density, and temperature is uniformly distributed, in conjunction with inverted structure, heat dissipation path is shortened, the thermal characteristics, reliability and service life of device are greatly improved.
Description
Technical field
The utility model relates to technical field of semiconductors, more specifically, it relates to a kind of upside-down mounting based on MJT technology
RCLED。
Background technique
English nouns are explained：(1)RCLED：Resonant cavity light-emitting diode resonant cavity light emitting
Diode；(2)MJT：More P/N tie technology；(3)LD：It is laser, radium-shine；(4) PN junction：Using different doping process, pass through diffusion
P-type semiconductor and N-type semiconductor are produced on same block semiconductor (usually silicon or germanium) substrate, in their friendship by effect
Interface just forms space-charge region and is known as PN junction；(5)HVFC：Height upside-down mounting.
Light source of the alternative LD of RCLED as narrow spectrum half-peak breadth has the advantages that low cost, high reliability.It is same at present
The problems such as class product is larger, light source power is lower, electro-optical efficiency is lower, the low service life there are center wavelength with temperature drift.
This patent into RCLED device, will creatively be improved based on HVFC (height upside-down mounting) technical application of MJT (more PN junctions)
State the defect of common RCLED.
Utility model content
In view of the deficienciess of the prior art, the purpose of this utility model is to provide a kind of upside-down mountings based on MJT technology
RCLED, to solve the problems mentioned in the above background technology.
To achieve the above object, the utility model provides the following technical solutions：
A kind of upside-down mounting RCLED based on MJT technology, including surface texture, circular substrate, buffer layer, the transmitting of upper Prague
Mirror, n type gallium nitride, Multiple-quantum hydrazine, p-type gallium nitride, metal interconnection, lower Prague transmitting mirror, Sn/Au eutectic weldering, aluminium nitride ceramics
Substrate, transparency conducting layer, P-type electrode and N-type electrode extrude equally distributed table with nanometer embossing on circular substrate surface
Face protrusion, forms surface texture, hemispherical figure out is corroded on wet etching surface after then protecting again to the circular substrate back side
Shape forms buffer layer；Then grown buffer layer, 5 pairs of upper Bragg mirrors, n type gallium nitride, Multiple-quantum hydrazine, P in MOCVD
Type gallium nitride and 34 pairs of lower Bragg reflectors；Sputter transparent conductive current extension layer in high oxygen concentration atmosphere, i.e., it is transparent to lead
Electric layer, photoetching corrosion interconnect slot, deposit nickel gold metal interconnection filler with PECVD, in deposit silica protection；Photoetching corrosion
Wire lead slot deposits golden tin electrode；Plasma etching is carried out to substrate to be thinned, and makes surface texture；Chip eutectic is welded to nitrogen
Change on aluminium ceramic substrate；Two PN junctions are connected with metal interconnection；Device substrate forward direction growth after upside-down mounting in aluminium nitride ceramics
On substrate.
Further, electric current enters P-type electrode by the pad below aluminum nitride ceramic substrate, the sub- trap of hole injection fluence, with
Electronics recombination luminescence from n-type region.
Further, the not compound hole finished for flowing into n type gallium nitride flows into next PN junction by metal interconnection, then infuses
Enter to Quantum Well compound with electronics, two PN junctions are connected with metal interconnection, the light of the compound sending in the quantum well region of two PN junctions,
By the mode modification of the upper Bragg mirror of the lower Bragg reflector and antiradar reflectivity of high reflectance, spectrum half-peak is generated
Wide very narrow monochromatic light radiation, radiate by graph substrate and surface texture.
Further, 5 pairs of upper Bragg mirrors and 34 pairs of lower Bragg reflectors realize 40% and 99% reflection respectively
Rate forms efficient resonant cavity, and active area wavelength is made to narrow to 470nm ± 5nm from 470nm ± 10nm.
Further, eutectic weldering exists without gold thread schemeUnder conditions of, it reaches
Switch life to more than 500 cold cyclings.
In conclusion the utility model has the advantages that compared with prior art：
The same Ts peak wavelength drift of the high pressure upside-down mounting of the upside-down mounting resonant cavity light emitting diodes of the utility model is smaller.
1. hemispherical graph substrate, longitudinal defect density is more effectively reduced, while gradual change epitaxial layer is to air refraction,
Reduce the angle of total reflection.
2. the randomization surface texture that substrate another side is done after being thinned, further gradual change substrate subtract to the refractive index of air
Few angle of total reflection.
3.5 pairs of upper Bragg mirrors and 34 pairs of lower Bragg reflectors realize 40% and 99% reflectivity, shape respectively
At efficient resonant cavity, active area wavelength is made to narrow to 470nm ± 5nm from 470nm ± 10nm.
4. flip-chip fashion effectively reduces active area to the thermal resistance of substrate, minimum to be down to 4 DEG C/W, device light is greatly improved
Decline characteristic, and L70B50 reaches 144kh, and device is made to have the cold and hot ratio close to 1, effectively inhibits wave length shift.
5. eutectic weldering can achieve the switch life of 500 cold cyclings or more more resistant to cooling thermal impact without gold thread scheme
(condition is)。
The more PN junctions of metal interconnection 6. (MJT) technology, high pressure low current is realized and without gold thread, do not subtract while increasing light efficiency
Few reliability, and the lateral uniform temperature performance of active area is increased, reduce active area temperature distributing disproportionation bring light decay not
Spectrum widening problem caused by unanimously, inhibits wave length shift to a certain extent.
For the structure feature and effect for more clearly illustrating the utility model, come with reference to the accompanying drawing with specific embodiment pair
The utility model is described in detail.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
Fig. 2 is the Ts peak wavelength drift schematic diagram of the utility model mesohigh upside-down mounting.
Appended drawing reference：The upper Prague transmitting mirror of 1- surface texture, 2- circular substrate, 3- buffer layer, 4-, 5-N type gallium nitride,
Prague transmitting mirror, the weldering of 10- Sn/Au eutectic, 11- aluminium nitride pottery under 6- Multiple-quantum hydrazine, 7-P type gallium nitride, 8- metal interconnection, 9-
Porcelain substrate, 12- transparency conducting layer, 13-P type electrode, 14-N type electrode.
Specific embodiment
The technical solution of the utility model is described further in the following with reference to the drawings and specific embodiments.
Referring to Fig. 1-2, a kind of upside-down mounting RCLED based on MJT technology, including surface texture 1, circular substrate 2, buffer layer 3,
Upper Prague transmitting mirror 4, n type gallium nitride 5, Multiple-quantum hydrazine 6, p-type gallium nitride 7, metal interconnection 8, lower Prague transmitting mirror 9, gold
Tin eutectic weldering 10, aluminum nitride ceramic substrate 11, transparency conducting layer 12, P-type electrode 13 and N-type electrode 14.
Equally distributed surface bulge is extruded with nanometer embossing on 2 surface of circular substrate, forms surface texture 1, so
Hemispherical figure out is corroded on wet etching surface after protecting again to 2 back side of circular substrate afterwards, forms buffer layer 3；Then exist
In MOCVD under 3,5 pairs of grown buffer layer upper Bragg mirrors 4, n type gallium nitride 5, Multiple-quantum hydrazine 6, p-type gallium nitride 7 and 34 pair
Bragg mirror 9；Wherein, MOCVD is outside a kind of novel gas phase to grow up on the basis of vapor phase epitaxial growth (VPE)
Prolong growing technology.MOCVD is to be given birth to using III race, the organic compound of II race's element and V, the hydride of VI race's element etc. as crystal
Long source material carries out vapour phase epitaxy on substrate in a manner of pyrolysis, grows various III-V main groups, II-VI subgroup chemical combination
The thin layer monocrystal material of object semiconductor and their multivariate solid solution.
Transparent conductive current extension layer, i.e. transparency conducting layer 12 are sputtered in high oxygen concentration atmosphere；Wherein, ITO is a kind of
N-type oxide semiconductor-tin indium oxide, ito thin film, that is, indium tin oxide transparent conductive semiconductor film usually refer to there are two performance
Mark：Resistivity and light transmittance.
Then, photoetching corrosion interconnects slot, deposits nickel gold metal interconnection filler with PECVD, protects in deposit silica,
Wherein, PECVD (Plasma Enhanced Chemical Vapor Deposition) refers to the gas of plasma enhanced chemical
Mutually deposit.
Then, photoetching corrosion wire lead slot deposits golden tin electrode；Plasma etching is carried out to substrate to be thinned, and makes surface
Structure 1；Chip eutectic is welded on aluminum nitride ceramic substrate 11.
Wherein, in the present invention, two PN junctions are connected with metal interconnection 8；Device falls after the growth of substrate forward direction
Loaded on aluminum nitride ceramic substrate 11.
The working principle of the utility model is：
Electric current enters P-type electrode 13 by the pad of the lower section of aluminum nitride ceramic substrate 11, the sub- trap of hole injection fluence, and comes from
The electronics recombination luminescence of n-type region.The not compound hole finished of inflow n type gallium nitride 5 is flowed into next by metal interconnection 8
It is compound with electronics to be re-introduced into Quantum Well for PN junction.The light of the compound sending in the quantum well region of two PN junctions, by under high reflectance
The mode of the upper Bragg mirror 4 of Bragg mirror 9 and antiradar reflectivity is modified, and the very narrow monochromatic light of spectrum half-peak breadth is generated
Radiation, radiate by graph substrate and surface texture.Two active areas have dispersed electric current injection density, and temperature is uniformly divided
Cloth shortens heat dissipation path in conjunction with inverted structure, greatly improves the thermal characteristics, reliability and service life of device.
The high pressure upside-down mounting advantage data of the upside-down mounting resonant cavity light emitting diodes of the utility model are as follows：
Low thermal resistance, high pressure upside-down mounting：8℃/W；Low pressure upside-down mounting：12℃/W.
Light decay is slow, high pressure upside-down mounting：L70B50=144kh；Low pressure upside-down mounting：L70B50=76kh.
Service life is long, high pressure upside-down mounting：Low pressure is fallen
Dress：
Impact resistance (due to no gold thread), can bear instantaneous large-current, lesser problems of electromigration.
It is higher by light, electrodeless block directly goes out light, and no gold thread extinction utilization rate is high.
It knows in summary and referring to fig. 2：The same Ts peak wavelength drift of high pressure upside-down mounting is smaller.
Sheet is practical new to be had the following advantages that：
1. hemispheric circular substrate 2, longitudinal defect density is more effectively reduced, while gradual change epitaxial layer is to air refraction
Rate reduces the angle of total reflection.
2. the randomization surface texture 1 that substrate another side is done after being thinned, further gradual change substrate subtract to the refractive index of air
Few angle of total reflection.
3.5 pairs of upper Bragg mirror 4 and 34 pair lower Bragg reflectors 9, realize 40% and 99% reflectivity respectively,
Efficient resonant cavity is formed, active area wavelength is made to narrow to 470nm ± 5nm from 470nm ± 10nm.
4. flip-chip fashion effectively reduces active area to the thermal resistance of substrate, minimum to be down to 4 DEG C/W, device light is greatly improved
Decline characteristic, and L70B50 reaches 144kh, and device is made to have the cold and hot ratio close to 1, effectively inhibits wave length shift.
5. eutectic weldering can achieve the switch life of 500 cold cyclings or more more resistant to cooling thermal impact without gold thread scheme
(condition is)。
The more PN junctions of metal interconnection 6. (MJT) technology, high pressure low current is realized and without gold thread, do not subtract while increasing light efficiency
Few reliability, and the lateral uniform temperature performance of active area is increased, reduce active area temperature distributing disproportionation bring light decay not
Spectrum widening problem caused by unanimously, inhibits wave length shift to a certain extent.
Technical principle of the utility model has been described above with reference to specific embodiments, is only the preferred implementation of the utility model
Mode.The protection scope of the utility model is not limited merely to above-described embodiment, technology belonging to the idea of the present invention
Scheme belongs to the protection scope of the utility model.Those skilled in the art, which does not need to pay for creative labor, to be associated
To other specific embodiments of the utility model, these modes are fallen within the protection scope of the utility model.
Claims (5)
1. a kind of upside-down mounting RCLED based on MJT technology, including surface texture (1), circular substrate (2), buffer layer (3), upper Bradley
Lattice transmitting mirror (4), n type gallium nitride (5), Multiple-quantum hydrazine (6), p-type gallium nitride (7), metal interconnection (8), lower Prague transmitting mirror
(9), Sn/Au eutectic weldering (10), aluminum nitride ceramic substrate (11), transparency conducting layer (12), P-type electrode (13) and N-type electrode
(14), which is characterized in that extrude equally distributed surface bulge with nanometer embossing on circular substrate (2) surface, form table
Hemispherical figure out is corroded on face structure (1), wet etching surface after then protecting again to circular substrate (2) back side, is formed
Buffer layer (3)；Then grown buffer layer (3), 5 pairs of upper Bragg mirror (4), n type gallium nitrides (5), Multiple-quantum in MOCVD
Hydrazine (6), p-type gallium nitride (7) and 34 pairs of lower Bragg reflectors (9)；Expand in high oxygen concentration atmosphere sputtering transparent conductive current
Layer, i.e. transparency conducting layer (12) are opened up, photoetching corrosion interconnects slot, nickel gold metal interconnection filler is deposited with PECVD, in deposit dioxy
SiClx protection；Photoetching corrosion wire lead slot deposits golden tin electrode；Plasma etching is carried out to substrate to be thinned, and makes surface texture
(1)；Chip eutectic is welded on aluminum nitride ceramic substrate (11)；Two PN junctions are connected with metal interconnection (8)；Device is in substrate
Upside-down mounting is on aluminum nitride ceramic substrate (11) after forward direction growth.
2. a kind of upside-down mounting RCLED based on MJT technology according to claim 1, which is characterized in that electric current passes through aluminium nitride
Pad below ceramic substrate (11) enters P-type electrode (13), the sub- trap of hole injection fluence, compound with the electronics from n-type region
It shines.
3. a kind of upside-down mounting RCLED based on MJT technology according to claim 2, which is characterized in that flow into n type gallium nitride
(5) the not compound hole finished flows into next PN junction by metal interconnection (8), and it is compound with electronics to be re-introduced into Quantum Well,
Two PN junctions are connected with metal interconnection (8), the light of the compound sending in the quantum well region of two PN junctions, by the lower cloth of high reflectance
The mode of the upper Bragg mirror (4) of glug reflecting mirror (9) and antiradar reflectivity is modified, and the very narrow monochrome of spectrum half-peak breadth is generated
Light radiation is radiate by graph substrate and surface texture.
4. a kind of upside-down mounting RCLED based on MJT technology according to claim 1, which is characterized in that 5 pairs of upper Prague are anti-
Mirror (4) and 34 pairs of lower Bragg reflectors (9) are penetrated, 40% and 99% reflectivity is realized respectively, forms efficient resonant cavity, make
Active area wavelength narrows to 470nm ± 5nm from 470nm ± 10nm.
5. a kind of upside-down mounting RCLED based on MJT technology according to claim 1, which is characterized in that eutectic is welded without gold thread side
Case existsUnder conditions of, reach the switch life of 500 cold cyclings or more.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820598468.9U CN208111471U (en) | 2018-04-25 | 2018-04-25 | A kind of upside-down mounting RCLED based on MJT technology |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820598468.9U CN208111471U (en) | 2018-04-25 | 2018-04-25 | A kind of upside-down mounting RCLED based on MJT technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071200A (en) * | 2019-03-21 | 2019-07-30 | 华灿光电股份有限公司 | Resonator light emitting diode and its manufacturing method |
| CN110620169A (en) * | 2019-09-10 | 2019-12-27 | 北京工业大学 | Transverse current limiting high-efficiency light-emitting diode based on resonant cavity |
| CN112635452A (en) * | 2020-12-21 | 2021-04-09 | 中国电子科技集团公司第五十五研究所 | Micro-LED display device structure with controllable light-emitting angle |
| CN113795773A (en) * | 2019-03-08 | 2021-12-14 | 欧司朗股份有限公司 | Component for a LIDAR sensor system, LIDAR sensor device, method for a LIDAR sensor system and method for a LIDAR sensor device |
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2018
- 2018-04-25 CN CN201820598468.9U patent/CN208111471U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113795773A (en) * | 2019-03-08 | 2021-12-14 | 欧司朗股份有限公司 | Component for a LIDAR sensor system, LIDAR sensor device, method for a LIDAR sensor system and method for a LIDAR sensor device |
| CN110071200A (en) * | 2019-03-21 | 2019-07-30 | 华灿光电股份有限公司 | Resonator light emitting diode and its manufacturing method |
| CN110620169A (en) * | 2019-09-10 | 2019-12-27 | 北京工业大学 | Transverse current limiting high-efficiency light-emitting diode based on resonant cavity |
| CN110620169B (en) * | 2019-09-10 | 2020-08-28 | 北京工业大学 | Transverse current limiting high-efficiency light-emitting diode based on resonant cavity |
| CN112635452A (en) * | 2020-12-21 | 2021-04-09 | 中国电子科技集团公司第五十五研究所 | Micro-LED display device structure with controllable light-emitting angle |
| CN112635452B (en) * | 2020-12-21 | 2022-09-06 | 中国电子科技集团公司第五十五研究所 | Micro-LED display device structure with controllable light-emitting angle |
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