CN207925494U - A kind of solar cell - Google Patents
A kind of solar cell Download PDFInfo
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- CN207925494U CN207925494U CN201820422874.XU CN201820422874U CN207925494U CN 207925494 U CN207925494 U CN 207925494U CN 201820422874 U CN201820422874 U CN 201820422874U CN 207925494 U CN207925494 U CN 207925494U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a kind of solar cell, the solar cell includes：Semiconductor layer；Absorbed layer on the semiconductor layer is set；The conductive layer for deviating from the semiconductor layer side in the absorbed layer is set；Wherein, the absorbed layer be with photoconductive properties and forward and reverse potential barrier >=1 volt of photon absorbing layer.The solar cell has abandoned the traditional PN junction structure of solar cell, using a kind of novel solar battery structure, the open-circuit voltage and generating efficiency for improving solar cell of high degree.
Description
Technical field
The utility model is related to technical field of photovoltaic power generation, more specifically more particularly to a kind of solar cell.
Background technology
With the continuous development of science and technology, solar cell be widely used to daily life, work and
In industry, bring great convenience for people’s lives.
Current solar cell is to carry out opto-electronic conversion using semiconductor PN, and PN junction has built in field and load
Sub- depletion layer is flowed, positive potential barrier is relatively low, can unilateal conduction.When irradiating PN junction, built in field collects the photoproduction in depletion layer
Carrier, under the action of built in field, photohole enters the areas P, and light induced electron enters the areas N, due to by lower forward direction
Potential barrier constrains, and the photohole into the areas P has a small amount of accumulation, and the light induced electron into the areas N also has a small amount of accumulation, and then generates light
Lie prostrate electromotive force.
But the built in field of semiconductor PN enhances with the increase of doping concentration, the enhancing of built in field is advantageous
In collection photo-generated carrier, but the positive barrier height of PN junction can be reduced with the increase of doping concentration, the positive gesture of PN junction
The reduction for building height is unfavorable for the accumulation of photo-generated carrier, it is therefore desirable to take into account the doping concentration needed for the two, limit power generation
Efficiency.Even if reducing doping concentration, the forward conduction voltage of PN junction is still smaller, about 0.7 volt, makes current solar-electricity
The open-circuit voltage in pond is relatively low.
Utility model content
To solve the above problems, the utility model provides a kind of solar cell, the open circuit of solar cell is improved
Voltage and generating efficiency.
To achieve the above object, the utility model provides the following technical solutions：
A kind of solar cell, the solar cell include：
Semiconductor layer；
Absorbed layer on the semiconductor layer is set；
The conductive layer for deviating from the semiconductor layer side in the absorbed layer is set；
Wherein, the absorbed layer be with photoconductive properties and forward and reverse potential barrier >=1 volt of photon absorbing layer.
Preferably, in above-mentioned solar cell, the semiconductor layer includes：It is generally aligned in the same plane and mutually independent P
Type semiconductor layer and n type semiconductor layer；
The absorbed layer includes the first absorbed layer and the second absorbed layer being generally aligned in the same plane, wherein described first absorbs
Layer is located on the p type semiconductor layer, and second absorbed layer is located on the n type semiconductor layer；
The conductive layer is located on first absorbed layer and second absorbed layer, wherein first absorbed layer and
It is connected by the conductive layer between second absorbed layer.
Preferably, in above-mentioned solar cell, the solar cell further includes：
The first metal electrode for deviating from first absorbed layer side in the p type semiconductor layer is set；
The second metal electrode for deviating from second absorbed layer side in the n type semiconductor layer is set.
Preferably, in above-mentioned solar cell, the semiconductor layer is p type semiconductor layer, and is adulterated for maximum concentration,
Resistivity is less than 0.1m Ω cm.
Preferably, in above-mentioned solar cell, the semiconductor layer is n type semiconductor layer, and is adulterated for maximum concentration,
Resistivity is less than 0.1m Ω cm.
Preferably, in above-mentioned solar cell, the solar cell further includes：
The first metal electrode for deviating from the absorbed layer side in the semiconductor layer is set；
The second metal electrode for deviating from the absorbed layer side in the conductive layer is set.
Preferably, in above-mentioned solar cell, the absorbed layer is intrinsic crystal silicon material layer.
Preferably, in above-mentioned solar cell, the absorbed layer is intrinsic zinc oxide material layer.
Preferably, in above-mentioned solar cell, the difference of the positive dark resistance and reversed dark resistance of the solar cell
The ratio of value and the positive dark resistance is less than or equal to the positive dark resistance of 10% or described solar cell and reversed dark electricity
The difference of resistance and the ratio of the reversed dark resistance are less than or equal to 10%.
Preferably, in above-mentioned solar cell, the conductive layer is transparent conducting glass.
By foregoing description it is found that a kind of solar cell provided by the utility model, the solar cell include：Half
Conductor layer；Absorbed layer on the semiconductor layer is set；The leading away from the semiconductor layer side in the absorbed layer is set
Electric layer；Wherein, the absorbed layer be with photoconductive properties and forward and reverse potential barrier >=1 volt of photon absorbing layer.
The solar cell, using with photoconductive properties and forward and reverse potential barrier >=1 volt of photon absorbing layer, too
When sun irradiation, a large amount of photo-generated carrier is generated, high barrier nature then forms very high positive potential barrier, is conducive to partly leading
Accumulate a large amount of light induced electron and/or photohole in body layer, the generating efficiency for improving solar cell of high degree, and
And compare more positive dark resistance well below reversed dark resistance and be capable of the conventional solar cell of unilateal conduction, due to the knot
There is no PN junctions not to have so the positive dark resistance of the solar cell is approximately equal to reversed dark resistance for the solar cell of structure
Unilateral conduction.
Description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer.
Fig. 1 is a kind of structural schematic diagram for solar cell that the utility model embodiment provides；
Fig. 2 is the structural schematic diagram for another solar cell that the utility model embodiment provides；
Fig. 3 is the structural schematic diagram for another solar cell that the utility model embodiment provides；
Fig. 4 is the structural schematic diagram for another solar cell that the utility model embodiment provides；
Fig. 5 is the structural schematic diagram for another solar cell that the utility model embodiment provides.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, below in conjunction with the accompanying drawings and have
Body embodiment is described in further detail the utility model.
With reference to figure 1, Fig. 1 is the structural schematic diagram of a kind of solar cell that the utility model embodiment provides, it is described too
It is positive can battery include：
Semiconductor layer 11；The absorbed layer 12 being arranged on the semiconductor layer 11；Setting deviates from institute in the absorbed layer 12
State the conductive layer 13 of 11 side of semiconductor layer；Wherein, the absorbed layer 12 be with photoconductive properties and forward and reverse potential barrier >=1
The photon absorbing layer of volt.
The solar cell, using with photoconductive properties and forward and reverse potential barrier >=1 volt of photon absorbing layer 12,
When shining upon, a large amount of photo-generated carrier is generated, high barrier nature then forms very high positive potential barrier, also, partly leads
Body layer 11 is the semiconductor layer of maximum concentration doping, therefore under extremely strong lattice electric field action, a large amount of light induced electron and/or
A large amount of photohole enters in corresponding semiconductor layer, and based on very high positive potential barrier, light induced electron and/or photohole can
With bulk deposition, and then the generating efficiency for improving solar cell of high degree.
Further, as shown in Fig. 2, the semiconductor layer 11 includes：It is generally aligned in the same plane and mutually independent p-type is partly led
Body layer 111 and n type semiconductor layer 112；The absorbed layer 12 includes that the first absorbed layer 121 and second being generally aligned in the same plane absorbs
Layer 122, wherein first absorbed layer 121 is located on the p type semiconductor layer 111, and second absorbed layer 122 is located at institute
It states on n type semiconductor layer 112；The conductive layer 13 is located on first absorbed layer 121 and second absorbed layer 122,
In, it is connected by the conductive layer 13 between first absorbed layer 121 and second absorbed layer 122.
Specifically, due in PN junction in conventional solar cell p type semiconductor layer and n type semiconductor layer can not achieve highest
The doping of concentration, otherwise p type semiconductor layer and n type semiconductor layer can be connected, based in the problem the utility model embodiment
The solar cell passes through independent first absorbed layer 121 and second absorbed layer 122, independent p type semiconductor layer
111 and n type semiconductor layer 112, instead of the PN junction in conventional solar cell.When p type semiconductor layer 111 and N-type semiconductor
After layer 112 separates, p type semiconductor layer 111 and n type semiconductor layer 112 all can be maximum concentration doping, it is dense due to adulterating
Degree is very high, so that carrier is not spread completely, so the solar cell will not form depletion layer, the interior electricity of solar cell
It hinders extremely low.
Since p type semiconductor layer 111 and n type semiconductor layer 112 are all highest doping concentrations, respectively include a kind of impurity from
Son, and the foreign ion very high density, impurities-anions can be in p type semiconductor layer 111 and in p type semiconductor layer 111
The contact surface of one absorbed layer 121 forms extremely strong negative crystal lattice electric field, and impurity cation is partly led in N-type in n type semiconductor layer 112
The contact surface of body layer 112 and the second absorbed layer 122 forms extremely strong positive lattice electric field, when 121 He of the first absorbed layer of sunlight
When the second absorbed layer 122, the photoconductive properties of the first absorbed layer 121 and the second absorbed layer 122 produce a large amount of photoproduction current-carrying
Son, forward and reverse potential barrier >=1 volt of property can form very high positive potential barrier, under extremely strong lattice electric field action, greatly
The light induced electron of amount rapidly enters in n type semiconductor layer 112, and a large amount of photohole rapidly enters in p type semiconductor layer 111,
Make the collection efficiency of its photo-generated carrier that can increase substantially, and due to being constrained by very high positive potential barrier, into p-type half
Photohole in conductor layer 111 can be with bulk deposition, can also a large amount of heaps into the light induced electron in n type semiconductor layer 112
Product, and then the photovoltaic electric kinetic potential of solar cell is made to increase substantially.
It should be noted that in the p type semiconductor layer 111 of highest doping concentration, existing a large amount of impurities-anions
A large amount of hole is had, the contact surface meeting of p type semiconductor layer 111 and the first absorbed layer 121 be acted on by two kinds of electric fields simultaneously,
It is the negative crystal lattice electric field that impurities-anions are formed and the positive electric field that hole is formed respectively.Similarly, in the N-type of highest doping concentration half
In conductor layer 112, existing a large amount of impurity cation also has a large amount of free electron, and n type semiconductor layer 112 and second absorbs
Layer 122 contact surface also can simultaneously be acted on by two kinds of electric fields, be respectively impurity cation formed positive lattice electric field and from
By the negative electric field electronically formed.Wherein, the position of foreign ion is fixed, can the fixed lattice electric field of forming position, hole and
Free electron is all carrier, and with electric current, shift position is not fixed, these carriers can be only formed the electric field of position floating.It is real
Verify bright, the fixed lattice electric field in position can collect the photo-generated carrier in absorbed layer, and the electric field that position is floated cannot be collected
Photo-generated carrier in absorbed layer.
It follows that the solar cell carries out photoelectric conversion by two independent contact surfaces, that is, pass through P-type semiconductor
The contact surface and the contact surface of n type semiconductor layer 112 and the second absorbed layer 122 of layer 111 and the first absorbed layer 121 carry out photoelectricity and turn
Change, forward and reverse potential barrier that the first absorbed layer 121 and the second absorbed layer 122 have >=1 volt of property can be formed it is very high
Positive potential barrier, specific features are shown as, which has very high positive dark resistance, and due to the solar energy of the structure
PN junction is not present in battery, so the positive dark resistance of the solar cell is approximately equal to the reversed dark resistance of battery, that is to say, that too
The positive dark resistance of positive energy battery and the difference of reversed dark resistance and the ratio of positive dark resistance are less than or equal to 10% or the sun
The positive dark resistance of energy battery and the difference of reversed dark resistance and the ratio of reversed dark resistance are less than or equal to 10%, and battery is opened
Road voltage is higher, open-circuit voltage >=1 volt.
Also, since p type semiconductor layer 111 and n type semiconductor layer 112 are the doping of maximum concentration, p type semiconductor layer
111 and n type semiconductor layer 112 all have extremely low resistivity so that carrier is not spread completely since doping concentration is very high,
So the solar cell will not form depletion layer, the interior resistance of solar cell is extremely low.
Secondly, absorbed layer 12 be with photoconductive properties and forward and reverse potential barrier >=1 volt of photon absorbing layer, and absorb
Layer is completely exposed can make full use of the photoconductive properties that absorbed layer has in the sun, make to generate in absorbed layer 12 more
The generating efficiency of photo-generated carrier, battery is higher.
It should be noted that as shown in figure 3, the solar cell further includes：
The first metal electrode 31 for deviating from 121 side of the first absorbed layer in the p type semiconductor layer 111 is set；If
Set the second metal electrode 32 for deviating from 122 side of the second absorbed layer in the n type semiconductor layer 112.
Specifically, the material identical of first metal electrode 31 and second metal electrode 32, including but do not limit
In aluminium or silver etc..
Further, as shown in figure 4, the semiconductor layer 11 is p type semiconductor layer 111, the solar cell also wraps
It includes：The first metal electrode 41 for deviating from 12 side of the absorbed layer in the P-type semiconductor 111 is set；It is arranged in the conduction
Layer 13 deviates from the second metal electrode 42 of 12 side of the absorbed layer, and second metal electrode 42 is the grid electrode of light transmission.
Specifically, when the semiconductor layer 11 is p type semiconductor layer 111, the solar cell is p-type solar-electricity
Pond, wherein the p type semiconductor layer 111 adulterates for maximum concentration, and resistivity is less than 0.1m Ω cm.
Since p type semiconductor layer 111 is highest doping concentration, including a kind of foreign ion, and the foreign ion is close
Spend it is high, in p type semiconductor layer 111 impurities-anions can the contact surface of p type semiconductor layer 111 and absorbed layer 12 formed pole
Strong negative crystal lattice electric field, when sunlight absorbed layer 12, the photoconductive properties of absorbed layer 12 produce a large amount of photoproduction current-carrying
Son, forward and reverse potential barrier >=1 volt of property can form very high positive potential barrier, under extremely strong lattice electric field action, greatly
The photohole of amount rapidly enters in p type semiconductor layer 111, makes the collection efficiency of its photo-generated carrier that can increase substantially, and
It, can be with bulk deposition, in turn into the photohole in p type semiconductor layer 111 due to being constrained by very high positive potential barrier
The photovoltaic electric kinetic potential of solar cell is set to increase substantially.
Further, as shown in figure 5, the semiconductor layer 11 is n type semiconductor layer 112, the solar cell also wraps
It includes：The first metal electrode 51 for deviating from 12 side of the absorbed layer in the n type semiconductor layer 112 is set；Setting is led described
Electric layer 13 deviates from the second metal electrode 52 of 12 side of the absorbed layer, and second metal electrode 52 is the grid electricity of light transmission
Pole.
Specifically, when the semiconductor layer 11 is n type semiconductor layer 112, the solar cell is N-type solar-electricity
Pond, wherein the n type semiconductor layer 112 adulterates for maximum concentration, and resistivity is less than 0.1m Ω cm.
Since n type semiconductor layer 112 is highest doping concentration, including a kind of foreign ion, and the foreign ion is close
Spend high, impurity cation is formed extremely strong in the contact surface of n type semiconductor layer 112 and absorbed layer 12 in n type semiconductor layer 112
Positive lattice electric field, when sunlight absorbed layer 12, the photoconductive properties of absorbed layer 12 produce a large amount of photo-generated carrier,
Its forward and reverse potential barrier >=1 volt of property can form very high positive potential barrier, under extremely strong lattice electric field action, largely
Light induced electron rapidly enters in n type semiconductor layer 112, makes the collection efficiency of its photo-generated carrier that can increase substantially, and due to
Constrained by very high positive potential barrier, into the light induced electron in n type semiconductor layer 112 can also bulk deposition, and then make
The photovoltaic electric kinetic potential of solar cell increases substantially.
Further, in the utility model embodiment, p type semiconductor layer includes but is not limited to boron-doped crystalline silicon
Or crystal germanium, can also be any type p type semiconductor layer for adulterating other impurity, but whether being any type of p-type half
Conductor layer, doping concentration are required to reach highest, highest doping concentration resistance that are different, therefore being formed because of material difference
Rate is also not quite similar.
Further, in the utility model embodiment, n type semiconductor layer includes but is not limited to the crystalline silicon for adulterating phosphorus
Or crystal germanium, can also be any type n type semiconductor layer for adulterating other impurity, but whether being any type of N-type half
Conductor layer, doping concentration are required to reach highest, highest doping concentration resistance that are different, therefore being formed because of material difference
Rate is also not quite similar.
Further, in the utility model embodiment, the absorbed layer includes but is not limited to intrinsic crystal silicon materials
Layer or intrinsic zinc oxide material layer, or other materials with photoconductive properties and high barrier nature only need its forbidden band
Width and Spectral matching.
Further, in the utility model embodiment, the positive dark resistance and reversed dark resistance of the solar cell
Essentially from the absorbed layer, the thickness of the absorbed layer is 10nm-500nm, including endpoint value, such as the absorbed layer
Thickness is 50nm or 200nm or 300nm or 400nm.That is, the thickness of first absorbed layer is 10nm-500nm, packet
Endpoint value is included, such as the thickness of first absorbed layer is 50nm or 200nm or 300nm or 400nm, second absorbed layer
Thickness is 10nm-500nm, including endpoint value, for example, second absorbed layer thickness be 50nm or 200nm or 300nm or
400nm。
Further, the conductive layer includes but is not limited to that transparent conducting glass or aluminium material conductive layer or silver-colored material are led
Electric layer etc., but have to light transmission.
For example, if p type semiconductor layer is boron-doped crystalline silicon, n type semiconductor layer is the crystalline silicon for adulterating phosphorus, absorbed layer
It is suitble to the intrinsic zinc oxide of ultraviolet light using energy gap, then the solar cell is a kind of height for being suitble to work in ultraviolet region
Imitate solar cell.
If p type semiconductor layer is boron-doped crystal germanium, n type semiconductor layer is the crystal germanium for adulterating phosphorus, and absorbed layer uses
Energy gap is suitble to the intrinsic crystal silicon of visible light, then the solar cell be it is a kind of be suitble to work in visible region efficiently too
Positive energy battery.
It should be noted that in the solar cell manufacture of semiconductor layer, absorbed layer and conductive layer include but
It is not limited to the mode of magnetron sputtering, in the utility model embodiment and is not construed as limiting.
By foregoing description it is found that a kind of solar cell provided by the utility model, has abandoned solar cell tradition
PN junction structure, using a kind of novel solar battery structure, the open-circuit voltage for improving solar cell of high degree
And generating efficiency.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use this practicality new
Type.Various modifications to these embodiments will be apparent to those skilled in the art, and determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The widest range consistent with features of novelty.
Claims (10)
1. a kind of solar cell, which is characterized in that the solar cell includes：
Semiconductor layer；
Absorbed layer on the semiconductor layer is set；
The conductive layer for deviating from the semiconductor layer side in the absorbed layer is set；
Wherein, the absorbed layer be with photoconductive properties and forward and reverse potential barrier >=1 volt of photon absorbing layer.
2. solar cell according to claim 1, which is characterized in that the semiconductor layer includes：It is generally aligned in the same plane
And mutually independent p type semiconductor layer and n type semiconductor layer；
The absorbed layer includes the first absorbed layer and the second absorbed layer being generally aligned in the same plane, wherein first absorbed layer position
In on the p type semiconductor layer, second absorbed layer is located on the n type semiconductor layer；
The conductive layer is located on first absorbed layer and second absorbed layer, wherein first absorbed layer and described
It is connected by the conductive layer between second absorbed layer.
3. solar cell according to claim 2, which is characterized in that the solar cell further includes：
The first metal electrode for deviating from first absorbed layer side in the p type semiconductor layer is set；
The second metal electrode for deviating from second absorbed layer side in the n type semiconductor layer is set.
4. solar cell according to claim 1, which is characterized in that the semiconductor layer is p type semiconductor layer, and is
Maximum concentration adulterates, and resistivity is less than 0.1m Ω cm.
5. solar cell according to claim 1, which is characterized in that the semiconductor layer is n type semiconductor layer, and for most
High-concentration dopant, resistivity are less than 0.1m Ω cm.
6. solar cell according to claim 4 or 5, which is characterized in that the solar cell further includes：
The first metal electrode for deviating from the absorbed layer side in the semiconductor layer is set；
The second metal electrode for deviating from the absorbed layer side in the conductive layer is set.
7. solar cell according to claim 1, which is characterized in that the absorbed layer is intrinsic crystal silicon material layer.
8. solar cell according to claim 1, which is characterized in that the absorbed layer is intrinsic zinc oxide material layer.
9. solar cell according to claim 1, which is characterized in that the positive dark resistance of the solar cell and anti-
The ratio of difference and the positive dark resistance to dark resistance is less than or equal to the dark electricity of forward direction of 10% or described solar cell
The difference of resistance and reversed dark resistance and the ratio of the reversed dark resistance are less than or equal to 10%.
10. solar cell according to claim 1, which is characterized in that the conductive layer is transparent conducting glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820422874.XU CN207925494U (en) | 2018-03-26 | 2018-03-26 | A kind of solar cell |
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| CN201820422874.XU CN207925494U (en) | 2018-03-26 | 2018-03-26 | A kind of solar cell |
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| CN207925494U true CN207925494U (en) | 2018-09-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019184576A1 (en) * | 2018-03-26 | 2019-10-03 | 赵博阳 | Solar cell |
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2018
- 2018-03-26 CN CN201820422874.XU patent/CN207925494U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019184576A1 (en) * | 2018-03-26 | 2019-10-03 | 赵博阳 | Solar cell |
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Effective date of registration: 20191009 Address after: 1409-a, unit 2, floor 14, building 8, yard 1, Beiqing Road, Changping District, Beijing 102206 Patentee after: Beijing Tianji Double Energy Photoelectric Technology Co., Ltd. Address before: 030003 Shanxi Province, Taiyuan city Jiancaoping District Street Fanhua forest Peninsula A2-3-2102 Patentee before: Zhao Bo Yang |