CN207587977U - Double frequency Terahertz absorber based on graphene - Google Patents
Double frequency Terahertz absorber based on graphene Download PDFInfo
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- CN207587977U CN207587977U CN201721430384.6U CN201721430384U CN207587977U CN 207587977 U CN207587977 U CN 207587977U CN 201721430384 U CN201721430384 U CN 201721430384U CN 207587977 U CN207587977 U CN 207587977U
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Abstract
The utility model discloses a kind of double frequency Terahertz absorbers based on graphene.It includes substrate metal layer (1), dielectric layer (2), graphene layer (3), round metal circular layer (4)；Substrate metal layer (1) is positioned at lowest level, the upper strata of substrate metal layer (1) is dielectric layer (2), the upper strata of dielectric layer (2) is graphene layer (3), and the upper strata of graphene layer (3) is that the geometric center of round metal circular layer (4) and graphene layer (3) is both the center of absorber and the center of circle of round metal circular layer (4).The utility model has many advantages, such as that double frequency absorbs, is simple in structure, and size is smaller to be easily integrated.
Description
Technical field
The utility model is related to absorber more particularly to a kind of double frequency Terahertz absorbers based on graphene.
Background technology
Terahertz Technology is a kind of new technology that twentieth century grows up the end of the eighties.The unique frequency model of THz wave
The molecular vibration that most macromolecular substances are covered (between microwave frequency band and optical frequencies) and rotation spectrum are enclosed, therefore most
Macromolecular substances all have apparent fingerprint spectral property in Terahertz frequency range its absorption spectra, reflectance spectrum or emission spectra, this
Any is not available for microwave.Terahertz pulse light source has many unique properties compared with conventional light source, such as：Transient state
Property, low energy etc., these features determine Terahertz Technology in industrial application, medical domain, the communications field and biology
There is considerable application prospect in the fields of grade.Therefore the research of Terahertz Technology and THz devices is increasingly becoming world's model
Enclose the interior hot spot studied extensively.
As device indispensable in Terahertz application technology, the research dynamics for increasing absorber is beneficial to absorber
The development of Terahertz Technology.And generally existing is complicated in existing absorber, absorption efficiency is low and size is larger, is not easy to
The shortcomings of integrated.For disadvantage mentioned above, the utility model devises one kind, and there is double frequency to absorb, is simple in structure, and size is compared with little Yi
Double frequency THz wave absorber in integrated the advantages that.
Invention content
The utility model provides a kind of double frequency Terahertz absorber based on graphene, and technical solution is as follows：
Double frequency Terahertz absorber based on graphene includes substrate metal layer, dielectric layer, graphene layer, metal ring
Layer；Substrate metal layer is located at lowest level, and the upper strata of substrate metal layer is dielectric layer, and the upper strata of dielectric layer is graphene layer, graphite
The upper strata of alkene layer is that the geometric center of round metal circular layer and graphene layer is both the center of absorber and the circle of round metal circular layer
The heart.
The base metal layer material is gold, and the length of side is 2 μm, and thickness is 0.2 μm；The material of the dielectric layer is two
Silica, 2 μm of the length of side, thickness are 4.25 μm；A length of 2 μm of the graphene layer, width are 1.2 μm；The round metal circular layer
Material for gold, thickness be 0.05 μm, exradius be 0.5 μm, inner circle radius be 0.4 μm.
The utility model has many advantages, such as that double frequency absorbs, is simple in structure, and size is smaller to be easily integrated.
Description of the drawings
Fig. 1 is the double frequency Terahertz absorber three dimensional structure diagram based on graphene；
Fig. 2 is the main schematic diagram of double frequency Terahertz absorber based on graphene；
Fig. 3 is the double frequency Terahertz absorber performance curve graph based on graphene；
Fig. 4 is energy profile of the double frequency Terahertz absorber based on graphene in 5.25THz Frequency points；
Fig. 5 is energy profile of the double frequency Terahertz absorber based on graphene in 6.8THz Frequency points.
Specific embodiment
As shown in Fig. 1~Fig. 2, the double frequency Terahertz absorber based on graphene includes substrate metal layer 1, dielectric layer 2, stone
Black alkene layer 3, round metal circular layer 4；Substrate metal layer 1 is located at lowest level, and the upper strata of substrate metal layer 1 is dielectric layer 2, dielectric layer 2
Upper strata be graphene layer 3, the upper strata of graphene layer 3 is that the geometric center of round metal circular layer 1 and graphene layer 3 is both absorber
Center be also round metal circular layer the center of circle.
The structure and through multiple physical field simulation software COMSOL Multiphysics optimization after size it is as follows：Base
Bottom metal layer material is gold, and the length of side is 2 μm, and thickness is 0.2 μm；The material of dielectric layer is silica, and 2 μm of the length of side, thickness is
4.25μm；A length of 2 μm of graphene layer, width are 1.2 μm；The material of round metal circular layer is gold, and thickness is 0.05 μm, exradius
It it is 0.5 μm, inner circle radius is 0.4 μm.
Embodiment 1
Double frequency Terahertz absorber based on graphene：
In the present embodiment, structure and each component shape based on Meta Materials Terahertz absorber are as described above, therefore no longer
It repeats.But the design parameter of each component is as follows：The length of side of substrate metal layer is 2 μm, and thickness is 0.2 μm；2 μ of the length of side of dielectric layer
M, thickness are 4.25 μm；A length of 2 μm of graphene layer, width are 1.2 μm；The thickness of round metal circular layer is 0.05 μm, and exradius is
0.5 μm, inner circle radius is 0.4 μm.The absorbance curves figure emulated by COMSOL Multiphysics is as shown in Figure 3.
It as seen from the figure,, should at 5.25THz and 6.8THz when giving absorber voltage supplied between graphene layer and substrate metal layer
Absorber, 99.5% or so, realizes bifrequency efficient absorption to the absorptivity of Terahertz.Fig. 4 and Fig. 5 is respectively the suction
Receive simulated electric field distribution map of the device at 5.25THz and 6.8THz.
Claims (5)
1. a kind of double frequency Terahertz absorber based on graphene, it is characterised in that it includes substrate metal layer (1), dielectric layer
(2), graphene layer (3), round metal circular layer (4)；Substrate metal layer (1) is to be situated between positioned at lowest level, the upper strata of substrate metal layer (1)
Matter layer (2), the upper strata of dielectric layer (2) is graphene layer (3), and the upper strata of graphene layer (3) is round metal circular layer (4) and graphene
The geometric center of layer (3) is both the center of absorber and the center of circle of round metal circular layer (4).
A kind of 2. double frequency Terahertz absorber based on graphene as described in claim 1, it is characterised in that the substrate
Metal layer (1) material is gold, and the length of side is 2 μm, and thickness is 0.2 μm.
A kind of 3. double frequency Terahertz absorber based on graphene as described in claim 1, it is characterised in that the medium
The material of layer (2) is silica, and 2 μm of the length of side, thickness is 4.25 μm.
A kind of 4. double frequency Terahertz absorber based on graphene as described in claim 1, it is characterised in that the graphite
A length of 2 μm of alkene layer (3), width are 1.2 μm.
A kind of 5. double frequency Terahertz absorber based on graphene as described in claim 1, it is characterised in that the metal
The material of annulus layer (4) is gold, and thickness is 0.05 μm, and exradius is 0.5 μm, and inner circle radius is 0.4 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721430384.6U CN207587977U (en) | 2017-10-30 | 2017-10-30 | Double frequency Terahertz absorber based on graphene |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721430384.6U CN207587977U (en) | 2017-10-30 | 2017-10-30 | Double frequency Terahertz absorber based on graphene |
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| CN207587977U true CN207587977U (en) | 2018-07-06 |
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| CN201721430384.6U Expired - Fee Related CN207587977U (en) | 2017-10-30 | 2017-10-30 | Double frequency Terahertz absorber based on graphene |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411898A (en) * | 2018-10-22 | 2019-03-01 | 桂林电子科技大学 | A method of the adjustable wave absorbing device of Terahertz double frequency-band based on graphene |
| CN111883935A (en) * | 2020-09-03 | 2020-11-03 | 浙江科技学院 | Terahertz wave absorber based on graphene metamaterial |
| CN113328259A (en) * | 2021-07-05 | 2021-08-31 | 江苏大学 | Metamaterial absorber, device and system and preparation method thereof |
-
2017
- 2017-10-30 CN CN201721430384.6U patent/CN207587977U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411898A (en) * | 2018-10-22 | 2019-03-01 | 桂林电子科技大学 | A method of the adjustable wave absorbing device of Terahertz double frequency-band based on graphene |
| CN111883935A (en) * | 2020-09-03 | 2020-11-03 | 浙江科技学院 | Terahertz wave absorber based on graphene metamaterial |
| CN111883935B (en) * | 2020-09-03 | 2022-05-20 | 浙江科技学院 | Terahertz wave absorber based on graphene metamaterial |
| CN113328259A (en) * | 2021-07-05 | 2021-08-31 | 江苏大学 | Metamaterial absorber, device and system and preparation method thereof |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180706 Termination date: 20181030 |