CN205825904U - The thickness print of calibration ellipsometer and inspection print thereof - Google Patents
The thickness print of calibration ellipsometer and inspection print thereof Download PDFInfo
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- CN205825904U CN205825904U CN201620790976.8U CN201620790976U CN205825904U CN 205825904 U CN205825904 U CN 205825904U CN 201620790976 U CN201620790976 U CN 201620790976U CN 205825904 U CN205825904 U CN 205825904U
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Abstract
The utility model discloses a kind of thickness print calibrating ellipsometer and inspection print thereof, relate to ellipsometer collimation technique field, comprise many group attachment silicon dioxide or the silicon chip of silicon nitride, thickness≤the 1000nm of silica membrane, thickness≤the 200nm of silicon nitride film, cover present semiconductor technology silica membrane and the range of application of silicon nitride film, calibration figure it is additionally provided with on silicon chip, calibration figure around region for calibration region, the region i.e. measured during calibration ellipsometer, calibration region is positioned at the central area of silicon chip, the region of calibration ellipsometer is consistent every time, consistency of thickness, ensure the accuracy of calibration, also disclose the inspection print of the thickness print of calibration ellipsometer, the thickness print of calibration ellipsometer can be tested, whether inspection thickness print can calibrate ellipsometer.
Description
Technical field
This utility model relates to ellipsometer collimation technique field, particularly relates to calibrate the thickness sample of ellipsometer and inspection sample thereof
Sheet.
Background technology
In semicon industry, the manufacture process of discrete device and integrated circuit can make heat oxide film (SiO2Thin
Film), dielectric film (Si3N4Thin film) etc. various functions in order to realize device.Heat oxide film or dielectric film are thin transparent
Film, film thickness is an important parameter, and its accuracy of measurement can directly affect the performance indications of device, therefore, to various
The mensuration accurately and fast of film thickness parameter and control, be to ensure that device quality, the important means of raising production efficiency.Ellipse partially
Instrument is for measuring, monitor the instrument of film thickness in microelectronic chip production process, is mainly used in solving semiconductor manufacturing industry
In the measurement problem of substantial amounts of transparent membrane thickness.
Ellipsometer belongs to indirectly measurement to the measurement of thin film, and it is according to polarized light polarization state change before and after reflection
Determine thin film parameter.The parameters such as the refractive index of thin film to be obtained, thickness, it is necessary to setting up a model, measurement model is ellipse
The core technology of instrument partially, for technical protection, there is the measurement model of oneself in ellipsometer manufacturer, and this results in use difference
During the apparatus measures same thin film thickness of manufacturer production, result arises that deviation.Additionally increase along with ellipsometer access times,
Service life increases, and the measurement result of ellipsometer there will be deviation, it is therefore necessary to calibrates ellipsometer, it is ensured that ellipsometer
Measurement result accurate.
Utility model content
The technical problems to be solved in the utility model is for above-mentioned the deficiencies in the prior art, it is provided that a kind of calibration ellipsometer
Thickness print, ellipsometer can be carried out the calibration in range of application range, and the thin film of unlike material can be carried out
Calibration, devises calibration figure, it is ensured that what correction was measured every time is all same region, it is ensured that the accuracy of correction；There is provided
The inspection print of a kind of thickness print, can measure checking to the film thickness of thickness print central area.
For solving above-mentioned technical problem, technical solution adopted in the utility model is: the thickness print of calibration ellipsometer,
Including several silicon chips, described silicon chip upper surface attachment silica membrane or silicon nitride film, the thickness of silica membrane
Degree≤1000nm, the thickness≤200nm of silicon nitride film, silicon chip is additionally provided with calibration figure, and calibration figure circle zone is fixed
Mark region, calibration region is silica membrane or silicon nitride film, several silicon chip surfaces described attachment silica membrane
Or silicon nitride film thickness is different, mutually constitute the different thickness print series of thickness.
The calibration region that the technical scheme optimized further is described is positioned at silicon chip central area.
The thickness print series that the technical scheme optimized further is described is: the silicon chip in attachment silicon dioxide calibration region
Have 7, the silica-film thickness of 7 silicon chips attachment be respectively 10nm, 20nm, 50nm, 100nm, 200nm, 500nm,
1000nm, range of error is ± 3%.
The thickness print series that the technical scheme optimized further is described is: with the silicon chip in silicon nitride calibration region be
4, the silicon nitride film thickness of 4 silicon chip attachments is respectively 20nm, 50nm, 100nm, 200nm, and range of error is ± 3%.
The inspection print of the thickness print of calibration ellipsometer, including an inspection print series, in inspection print series
Every a piece of silicon chip is all with open film pattern, and has identical material same thickness with the most a piece of in described thickness print series
Thin film, open film pattern is identical with calibrating position on silicon chip, the region.
The open film pattern that the technical scheme optimized further is described is four kinds.
The open film pattern that the technical scheme optimized further is described is thin film or the thin film figure with ledge structure
Shape.
Use and have the beneficial effects that produced by technique scheme: by making silicon dioxide and two kinds of films of silicon nitride
Thick print, film thickness range covers present semiconductor technology silica membrane and the range of application of silicon nitride film, can be right
Ellipsometer carries out the calibration in range of application range；Ellipsometer thickness print is provided with calibration figure, and calibration is chosen in correction every time
Figure around calibration regional extent in thin film be corrected, it is ensured that the region that every time timing is measured is consistent, consistency of thickness,
Improve the accuracy of calibration；Also having made the inspection print being provided with open film pattern, the open film pattern on inspection print is not only
It is capable of the requirement of ellipsometer measurement, moreover it is possible to realize white light interferometer, the requirement of step instrument measurement, can be with step instrument with white
Thickness is verified by optical diffraction instrument, improves the accuracy of thickness print calibration ellipsometer.
Accompanying drawing explanation
Fig. 1 is the top view of a piece of thickness print being provided with calibration figure.
Fig. 2 is the top view of a piece of inspection print being provided with open film pattern.
Fig. 3 is the partial enlarged drawing of the first open film pattern in Fig. 2.
Fig. 4 is the partial enlarged drawing of the second open film pattern in Fig. 2.
Fig. 5 is the partial enlarged drawing of the 3rd open film pattern in Fig. 2.
Fig. 6 is the partial enlarged drawing of the 4th open film pattern in Fig. 2.
In figure: 1, silicon chip；2, calibration region；3, calibration figure；4, film pattern is opened；41, the first open film pattern；42、
Second open film pattern；43, the 3rd open film pattern；44, the 4th open film pattern.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of this utility model rather than whole
Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under making creative work premise
Any amendment, equivalent and the improvement etc. made within spirit of the present utility model and principle, broadly fall into this utility model
The scope of protection.
The thickness print of calibration ellipsometer, for the thickness print that a series of thickness are different, selecting silicon chip 1 is backing material,
Each print is the silicon chip 1 of attachment film, and thin film is divided into two kinds, is silica membrane and silicon nitride film respectively；Include
Bi-material the most frequently used in current semiconductor industry, can be used to calibrate ellipsometer and two kinds of thin film is carried out thickness measure, silicon chip 1
Being provided with calibration figure 3, the region of calibration figure 3 cincture is calibration region 2, and calibration region 2 is silica membrane or nitridation
Silicon thin film.
Seven are had, the silica membrane of seven print attachments with the thickness print of silicon dioxide calibration region 2 thin film
Thickness is respectively 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 1000nm；Thickness sample with silicon nitride calibration region 2
Sheet is four, and the silicon nitride film thickness of four print attachments is respectively 20nm, 50nm, 100nm, 200nm, 11 print phases
Constitute the measurement specification series that a thickness is different mutually, substantially covers the range of application of current semiconductor industry, size range
Wide, it is possible to ellipsometer is carried out the calibration in range of application range.Silica membrane prepared by the existing technique of semicon industry
Causing with silicon nitride film zone line and marginal area variable thickness on monolithic, intermediate zone thicknesses compares concentration uniformly, this
Place's indication print film thickness is print intermediate zone thicknesses, and calibration figure 3 and calibration region 2 also are located at print zone line.
There is error, General Central area thickness and setting value THICKNESS CONTROL in film thickness prepared by existing semiconductor technology and setting value
In the range of ± 10%, the application controls within ± 3%, five position film thicknesses about the upper, middle and lower of monolithic upscaling region
Difference controls within 5%.
Because there is error in film thickness prepared by existing semiconductor technology and setting value, so the thickness print of preparation
Film thickness for the film thickness of the thickness print of the preparation that knows for sure, will not design a series of completely with to arrange value the same
Being provided with the inspection print of open film pattern 4, form an inspection print series, inspection print is used for verifying the thin film of thickness print
Thickness, inspection print and thickness print are the most corresponding, and every a piece of thickness print should have a piece of inspection print relatively, corresponding
Thickness print and inspection print use and prepare with a semiconductor technology, have the thin film of identical material same thickness.In order to test
The accuracy of card, the calibration region 2 of thickness print and the open film pattern 4 of calibration print same position on silicon chip.Preferably
, it is all located at zone line.Open film pattern 4 is thin film or the membrane structure with step, and open film pattern 4 can use
The reasonably equipment such as white light interferometer, spectroscopic ellipsometer or step instrument carries out the measurement of thickness, effectively verifies the thickness of thickness
Value.
Fig. 1 is the top view of a piece of thickness print being provided with calibration figure 3, and thickness print makes on 4 cun of silicon chips 1, by
Big in regional extent, the thickness zone line of monolithic thin film prepared by existing semiconductor technology and marginal area will not complete one
Cause, in order to ensure the accurate of Film thickness standard print calibration ellipsometer result, provide calibration region 2 during print calibration, i.e. calibrate
During ellipsometer measure region, thickness print middle section devise calibration figure 3, calibration figure 3 around region be fixed
Mark region 2, calibration region 2 is silica membrane or silicon nitride film, it is simple to thickness is measured by ellipsometer, calibrates region
2 middle sections being located at silicon chip 1, thin film middle section thickness ratio prepared by semiconductor technology is more uniform, and calibration figure 3 marks
The measurement position of thickness print, it is ensured that calibration ellipsometer measurement is all fixed area every time, it is ensured that the concordance of calibration, standard
Really property.Owing to calibration region 2 is the thin film of Regional covering, i.e. at the whole cover film in certain region of silicon chip 1, region thin film
Four positions up and down make calibration figures 3 and be used for identifying the scope of region thin film.
As in figure 2 it is shown, open film pattern 4 is designed as four kinds, open film pattern 4 and calibrate the same silicon chip 1 that is positioned in region 2
Central area, Fig. 3 is the first open film pattern 41, uses white light interferometer to measure thickness, and Fig. 4 is the second open film pattern 42,
Using light spectrality ellipsometer to measure, Fig. 5 is the 3rd open film pattern 43, measures with light spectrality ellipsometer, and Fig. 6 is the
Four open film patterns 44, use step instrument to measure, and four kinds of open film patterns 4 are designed as being applicable to three of the above and measure thin
The film pattern that the equipment of film thickness measures, the position of four kinds of open film patterns 4 can exchange.White light interferometer and spectrum
Property ellipsometer measurement open film pattern 4 be silica membrane or silicon nitride film, step instrument measure open film pattern 4 be
There is silica membrane or the silicon nitride film of ledge structure.
Silicon nitride film uses low-pressure chemical vapor phase deposition technique to make, and uses photoetching, etching technics to prepare institute afterwards
Needing figure, silica membrane print uses thermal oxidation technology to make, and uses photoetching, etching technics to prepare required figure afterwards
Shape；The thin film of identical material same thickness for preparing with a low-pressure chemical vapor phase deposition technique or thermal oxidation technology, again because of
The film thickness in the central area of silicon chip, i.e. calibration region and open film pattern it is all located at for calibration region and open film pattern
It is basically identical, so the thickness in calibration region can be determined by the thickness in open film pattern region.
The calibration steps of the thickness print of calibration ellipsometer, comprises the steps of
1) thickness print and the inspection print of calibration ellipsometer are prepared；
2) one of them inspection print with open film pattern is taken, respectively with white light interferometer, spectroscopic ellipsometer, light
Spectral pattern ellipsometer, step instrument carry out thickness measure checking to four kinds of open film patterns；If one-tenth-value thickness 1/10 is in range of set value, if
The one-tenth-value thickness 1/10 that limits i.e. sets is plus the error allowed.Carry out next step, otherwise, then the calibration of corresponding this sheet inspection print
The thickness print of ellipsometer is defective；
3) take inspection print used in one of them the thickness print with calibration figure, with above-mentioned steps and there is identical material
The thin film of matter same thickness, measures calibrating five positions about the upper, middle and lower in region with ellipsometer, surveys with five positions
The maximum difference of amount result is as the uniformity results of this print, if uniformity results is less than 5%, it was demonstrated that this thickness print accords with
Close the requirement of calibration ellipsometer thickness print, otherwise, the thickness print of this sheet calibration ellipsometer is defective；
4) successively the thickness print of one group of calibration ellipsometer is measured inspection according to the method for step 2 and step 3, as
Really the inspection print of every ellipsometer is all in range of set value, and the thickness print of one group of calibration ellipsometer the most all meets the requirements,
So can will be used for calibration ellipsometer with the thickness print of calibration figure and calibration region as the thickness print calibrating ellipsometer
Instrument partially.
By making silicon dioxide and two kinds of thickness prints of silicon nitride, film thickness range covers present semiconductor technology dioxy
SiClx thin film and the range of application of silicon nitride film, can carry out the calibration in range of application range to ellipsometer；Ellipsometer film
Thick print is provided with calibration figure, every time correction choose calibration figure around calibration regional extent in thin film be corrected,
Ensure that the region that each timing is measured is consistent, consistency of thickness, improves the accuracy of calibration；Also make and be provided with open film pattern
Inspection print, the open film pattern on inspection print can not only realize the requirement of ellipsometer measurement, moreover it is possible to realizes white light dry
The requirement that interferometer, step instrument are measured, can verify thickness with step instrument and white light diffractometer, improves the calibration of thickness print
The accuracy of ellipsometer, it is provided that a kind of method, can carry out calibration verification to the thickness print of ellipsometer.
Claims (7)
1. calibrate the thickness print of ellipsometer, it is characterised in that: including several silicon chips (1), described silicon chip (1) upper surface adheres to
Silica membrane or silicon nitride film, the thickness≤1000nm of silica membrane, the thickness of silicon nitride film≤
200nm, silicon chip (1) is additionally provided with calibration figure (3), and calibration figure (3) circle zone is calibration region (2), calibration region (2)
For silica membrane or silicon nitride film, described several silicon chips (1) surface attachment silica membrane or silicon nitride are thin
Film thickness is different, mutually constitutes the different thickness print series of thickness.
The thickness print of calibration ellipsometer the most according to claim 1, it is characterised in that described calibration region (2) is positioned at silicon
Sheet (1) central area.
The thickness print of calibration ellipsometer the most according to claim 1, it is characterised in that described thickness print series is:
The silicon chip (1) of attachment silicon dioxide calibration region (2) has 7, and the silica-film thickness that 7 silicon chips (1) are adhered to is respectively
10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 1000nm, range of error is ± 3%.
The thickness print of calibration ellipsometer the most according to claim 1, it is characterised in that described thickness print series is:
Silicon chip (1) with silicon nitride calibration region (2) is 4, the silicon nitride film thickness that 4 silicon chips (1) are adhered to be respectively 20nm,
50nm, 100nm, 200nm, range of error is ± 3%.
5. according to the inspection print of the thickness print calibrating ellipsometer according to any one of claim 1-4, it is characterised in that
Including one inspection print series, inspection print series in every a piece of silicon chip (1) all with opening film pattern (4), and with power
Profit requires the most a piece of thin film having identical material same thickness in the thickness print series according to any one of 1-4, open film
Figure (4) is identical with calibration region (2) position on silicon chip (1).
The inspection print of the thickness print of calibration ellipsometer the most according to claim 5, it is characterised in that described open film
Figure (4) is four kinds.
The inspection print of the thickness print of calibration ellipsometer the most according to claim 5, it is characterised in that described open film
Figure (4) is thin film or the film pattern with ledge structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620790976.8U CN205825904U (en) | 2016-07-26 | 2016-07-26 | The thickness print of calibration ellipsometer and inspection print thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620790976.8U CN205825904U (en) | 2016-07-26 | 2016-07-26 | The thickness print of calibration ellipsometer and inspection print thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106052573A (en) * | 2016-07-26 | 2016-10-26 | 中国电子科技集团公司第十三研究所 | Calibration ellipsometer film thickness sample, test sample and test method |
| CN112729133A (en) * | 2020-12-18 | 2021-04-30 | 广东省大湾区集成电路与系统应用研究院 | Method and device for measuring film thickness based on diffraction intensity of detection grating |
| CN112881960A (en) * | 2021-01-19 | 2021-06-01 | 西安微电子技术研究所 | Wafer-level measurement standard device and preparation method thereof |
-
2016
- 2016-07-26 CN CN201620790976.8U patent/CN205825904U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106052573A (en) * | 2016-07-26 | 2016-10-26 | 中国电子科技集团公司第十三研究所 | Calibration ellipsometer film thickness sample, test sample and test method |
| CN106052573B (en) * | 2016-07-26 | 2019-04-16 | 中国电子科技集团公司第十三研究所 | It calibrates the film thickness print of ellipsometer, examine print and its method of inspection |
| CN112729133A (en) * | 2020-12-18 | 2021-04-30 | 广东省大湾区集成电路与系统应用研究院 | Method and device for measuring film thickness based on diffraction intensity of detection grating |
| CN112729133B (en) * | 2020-12-18 | 2023-02-24 | 广东省大湾区集成电路与系统应用研究院 | Method and device for measuring film thickness based on diffraction intensity of detection grating |
| CN112881960A (en) * | 2021-01-19 | 2021-06-01 | 西安微电子技术研究所 | Wafer-level measurement standard device and preparation method thereof |
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