CN205303463U - Front end module packaging part - Google Patents
Front end module packaging part Download PDFInfo
- Publication number
- CN205303463U CN205303463U CN201521043026.0U CN201521043026U CN205303463U CN 205303463 U CN205303463 U CN 205303463U CN 201521043026 U CN201521043026 U CN 201521043026U CN 205303463 U CN205303463 U CN 205303463U
- Authority
- CN
- China
- Prior art keywords
- end module
- acoustic wave
- surface acoustic
- wave filter
- packaging part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structure Of Receivers (AREA)
Abstract
The utility model discloses a front end module packaging part. According to the utility model discloses a front end module packaging part of an embodiment contains: low noise power amplifier, surface acoustic wave filter, and base plate. This base plate is through the configuration in order to be connected with low noise power amplifier and surface acoustic wave filter electricity respectively. Surface acoustic wave filter sets up on this base plate, and low noise power amplifier further stacks in the surface acoustic wave filter top. The embodiment of the utility model provides a front end module packaging part who provides can effectively reduce front end module packaging part's size, can greatly improve the phenomenon that the radio frequency characteristic is degenerated.
Description
Technical field
This utility model relates to the encapsulation technology of semiconductor applications, particularly relates to front-end module (FEM, FrontEndModule) packaging part.
Background technology
For front-end module, the mode of industry main flow is to adopt 2D, and the mode of (sidebyside) has encapsulated namely shoulder to shoulder. This packaged type under the less demanding premise of product size be one good, method preferably even, it is possible to achieve every radiofrequency characteristics required during design. However as the demand of the miniaturization of electronic products that market is aggravated increasingly, once packaging part narrows down to certain size, this traditional packaged type just cannot meet every radiofrequency characteristics that design is required on limited contact area.
It it is the sectional view of the front-end module packaging part 10 of a global positioning system shown in Fig. 1. Namely what this front-end module packaging part 10 adopted is above-mentioned 2D mode. As shown in Figure 1, this front-end module packaging part 10 mainly comprises low noise amplifier 12, surface acoustic wave (SAW, SurfaceAcousticWave) wave filter 14, and carry the substrate 16 of this low noise amplifier 12 and surface acoustic wave filter 14. When front end module package 10 size reduce time, its contact area being provided that also reduces therewith, and ground plane can very in small, broken bits and cannot be complete as far as possible. Under this situation, this sensing element of low noise amplifier 12 can be highly susceptible to the interference of ground noise signal coupling, and then produces the problem that every radiofrequency characteristics is degenerated.
Thus, existing front-end module packaging part still needs to improve the market demand that can adapt to product miniaturization further.
Utility model content
One of the purpose of this utility model is in that to provide a front-end module packaging part, and it can be prevented effectively from the ground noise signal coupling interference to low-noise filter when limited package dimension.
According to an embodiment of the present utility model, a kind of front-end module packaging part, it comprises: low noise amplifier, surface acoustic wave filter, and substrate. This substrate is configured to electrically connect with described low noise amplifier and described surface acoustic wave filter. Surface acoustic wave filter is arranged on this substrate, and low noise amplifier overlays above surface acoustic wave filter further.
In an embodiment of the present utility model, fixing with non-conductive adhesive laminating between low noise amplifier and surface acoustic wave filter.The thickness of non-conductive adhesive is 10-20um.
In an embodiment of the present utility model, surface acoustic wave filter is nude film copper framework surface acoustic wave filter.
In an embodiment of the present utility model, realize electrically connecting with gage system between low noise amplifier with substrate. In an embodiment of the present utility model, realize electrically connecting in stannum ball mode between surface acoustic wave filter with described substrate.
In an embodiment of the present utility model, front-end module packaging part is receiving front-end module.
The front-end module packaging part that this utility model embodiment provides, low noise amplifier overlays above surface acoustic wave filter, compares traditional mode shoulder to shoulder and can effectively reduce the size of front-end module packaging part. The ground noise interference to low noise amplifier simultaneously because frame height has insulated, the in addition reduction of the ground noise current potential of low noise amplifier own, can greatly improve the phenomenon that radiofrequency characteristics is degenerated.
Accompanying drawing explanation
It it is the sectional view of the front-end module packaging part of a global positioning system shown in Fig. 1
It it is the sectional view of front-end module packaging part according to this utility model one embodiment shown in Fig. 2
It it is the sectional view of front-end module packaging part according to another embodiment of this utility model shown in Fig. 3
Detailed description of the invention
For being better understood from spirit of the present utility model, below in conjunction with part preferred embodiment of the present utility model, it is described further.
For all of circuit, electric current all has to flow through earth lead. And all of earth lead has impedance slightly, these limited impedance grounds can produce pressure drop on earth lead, and these pressure drops can be coupled to again relevant circuit. Here it is the main cause that ground noise produces. Ground noise can make electronic product overall permanence reduce, for sensing element, as bigger in low-noise amplifier impact. Ground noise is even eliminated, it is desirable to provide enough, complete as far as possible contact areas for reducing. And this point not a duck soup for the front-end module packaging part multiple nude films need to being packaged together.
The encapsulation thinking that embodiment of the present utility model breaks traditions, and can effectively solve the problems referred to above.
It it is the sectional view of front-end module packaging part 20 according to this utility model one embodiment shown in Fig. 2. This front-end module packaging part 20 can be applicable to the multiple electronic products such as global positioning system, especially as low power module, for instance receiving front-end module.
As in figure 2 it is shown, this front-end module packaging part 20 mainly comprises low noise amplifier 22, surface acoustic wave filter 24, and carry the substrate 26 of this low noise amplifier 22 and surface acoustic wave filter 24. This substrate 26 can be common double-deck BT (maidsBislmie.Tizn) base plate for packaging. This surface acoustic wave filter 24 is directly arranged on substrate 26, is realized and the electrical connection of related circuit on substrate 26 by modes such as stannum balls 30. Low noise amplifier 22 then overlays above surface acoustic wave filter 24 further, and by going between, 32 grades realize electrically connecting with related circuit on substrate 26; Thus with the effective insulating ground noise of frame high mode (Stacked-onPassive) to overall electronic product, such as the impact of GPS system. Fixing with non-conductive adhesive 34 laminating between low noise amplifier 22 and surface acoustic wave filter 24, non-conductive adhesive may select kind commonly used in the art, is not particularly limited. Laminating type can be that low noise amplifier 22 is made wafer rear coating processing.
Owing to low noise amplifier 22 overlays above surface acoustic wave filter 24, make that the ground structure of substrate 26 is as much as possible is applied to surface acoustic wave filter 24, so that surface acoustic wave filter 24 has relatively uniform smooth contact area, and then reduce ground noise current potential.
It it is the sectional view of front-end module packaging part 20 according to another embodiment of this utility model shown in Fig. 3.
As it is shown on figure 3, similar, this front-end module packaging part 20 mainly comprises low noise amplifier 22, surface acoustic wave filter 24, and carries the substrate 26 of this low noise amplifier 22 and surface acoustic wave filter 24. This surface acoustic wave filter 24 is nude film copper framework (DSSP) surface acoustic wave filter, and it is directly arranged on substrate 26, is realized and the electrical connection of related circuit on substrate 26 by modes such as stannum balls 30. Low noise amplifier 22 then overlays above surface acoustic wave filter 24 further. Fixing with non-conductive adhesive 34 laminating between low noise amplifier 22 and surface acoustic wave filter 24, non-conductive adhesive may select kind commonly used in the art, is not particularly limited. Consider DSSP surface acoustic wave filter 24 architectural characteristic and manufacture in stressing conditions, the mode that wafer rear is coated with can be used repeatedly to increase the thickness of non-conductive adhesive, low noise amplifier 22 is fitted on certain thickness non-conductive adhesive 34 completely, and this thickness can be controlled between 10-20um; And then avoid directly contacting or cushion between the two deficiency with surface acoustic wave filter 24 and cause DSSP surface acoustic wave filter 24 to rupture.
Owing to low noise amplifier 22 overlays above surface acoustic wave filter 24, compare traditional mode shoulder to shoulder and can effectively reduce the size of front-end module packaging part 20. The ground noise interference to low noise amplifier 22 simultaneously because frame height has insulated, the in addition reduction of the ground noise current potential of low noise amplifier 22 own, can greatly improve the phenomenon that radiofrequency characteristics is degenerated.
Technology contents of the present utility model and technical characterstic have revealed that as above, but those of ordinary skill in the art are still potentially based on teaching of the present utility model and announcement and do all replacements without departing substantially from this utility model spirit and modification. Therefore, protection domain of the present utility model should be not limited to the content that embodiment is disclosed, and should include various without departing substantially from replacement of the present utility model and modification, and is contained by present patent application claims.
Claims (7)
1. a front-end module packaging part, it comprises:
Low noise amplifier;
Surface acoustic wave filter; And
Substrate, is configured to electrically connect with described low noise amplifier and described surface acoustic wave filter;
It is characterized in that described surface acoustic wave filter is arranged on described substrate, described low noise amplifier overlays above surface acoustic wave filter further.
2. front-end module packaging part as claimed in claim 1, it is characterised in that fixing with non-conductive adhesive laminating between described low noise amplifier and described surface acoustic wave filter.
3. front-end module packaging part as claimed in claim 2, it is characterised in that the thickness of described non-conductive adhesive is 10-20um.
4. front-end module packaging part as claimed in claim 1, it is characterised in that described surface acoustic wave filter is nude film copper framework surface acoustic wave filter.
5. front-end module packaging part as claimed in claim 1, it is characterised in that realize electrically connecting with gage system between described low noise amplifier with described substrate.
6. front-end module packaging part as claimed in claim 1, it is characterised in that realize electrically connecting in stannum ball mode between described surface acoustic wave filter with described substrate.
7. front-end module packaging part as claimed in claim 1, it is characterised in that described front-end module packaging part is receiving front-end module.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201521043026.0U CN205303463U (en) | 2015-12-15 | 2015-12-15 | Front end module packaging part |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201521043026.0U CN205303463U (en) | 2015-12-15 | 2015-12-15 | Front end module packaging part |
Publications (1)
Publication Number | Publication Date |
---|---|
CN205303463U true CN205303463U (en) | 2016-06-08 |
Family
ID=56430829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201521043026.0U Active CN205303463U (en) | 2015-12-15 | 2015-12-15 | Front end module packaging part |
Country Status (1)
Country | Link |
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CN (1) | CN205303463U (en) |
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2015
- 2015-12-15 CN CN201521043026.0U patent/CN205303463U/en active Active
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: No. 188, Suhong West Road, Suzhou Industrial Park, Changzhou City, Jiangsu Province Patentee after: Riyuexin semiconductor (Suzhou) Co.,Ltd. Patentee after: Sun moonlight Semiconductor Manufacturing Co., Ltd Address before: 215026 No.188 Suhong West Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: SUZHOU ASEN SEMICONDUCTORS Co.,Ltd. Patentee before: Sun moonlight Semiconductor Manufacturing Co., Ltd |
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CP03 | Change of name, title or address |