CN204779787U - Magnetron sputtering target rifle - Google Patents
Magnetron sputtering target rifle Download PDFInfo
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- CN204779787U CN204779787U CN201520477129.1U CN201520477129U CN204779787U CN 204779787 U CN204779787 U CN 204779787U CN 201520477129 U CN201520477129 U CN 201520477129U CN 204779787 U CN204779787 U CN 204779787U
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- magnetron sputtering
- sputtering target
- rifle
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Abstract
The utility model discloses a magnetron sputtering target rifle, magnetron sputtering target rifle is cylindrical magnetron sputtering target rifle, including base, magnetism target and target, the magnetism target is fixed in on the base, the target passes through the rotation axis to be fixed on the magnetism target, the magnetism target includes magnetic core and ringshaped magnet seat, be equipped with align to grid's magnet piece on the ringshaped magnet seat, the cyclic annular magnetism target of centralize - outer loop designs, be equipped with cooling device between magnetic core and the magnet seating ring, cooling device includes two upper and lower coalesced copper water -coolings and is located the heat -conducting plate between two upper and lower coalesced copper water -coolings. The cyclic annular magnetism target design of unique center - outer loop of adopting of magnetron sputtering target rifle, make magnetic field cover the target comprehensively, improve the utilization ratio of target, set up heat -conducting plate formation cooling device between two coalesced copper water -coolings about adopting, the in time effectual heat that produces magnetism target in operation distributes away, guarantees the stability of its long -term operation, sputters evenly to obtain superior in quality film.
Description
Technical field
The utility model relates to the technical field of magnetron sputtering plating, is related specifically to a kind of magnetron sputtering target rifle.
Background technology
Along with the development of man-machine interaction liquid crystal display and contact panel equipment and technology, the efficiency of produce the manufacture of liquid crystal display and contact panel equipment and process yields are had higher requirement, particularly also more and more higher to the requirement of thin film deposition processes.
Magnetron sputtering plating is the method for the normal a kind of thin film deposition adopted at present, can carry out the deposition of metallic film or metal-oxide transparent electrode film.Sputter coating refers to that electronics accelerates to fly in the process of substrate to collide with ar atmo under the effect of electric field, and ionize out a large amount of argon ions and electronics, electronics flies to substrate.Argon ion accelerates to bombard target under the effect of electric field, sputters a large amount of target atom, is deposited on film forming on substrate in neutral target atom (or molecule).And magnetron sputtering plating is with magnetic field constraint and the movement path extending electronics, changes the direction of motion of electronics, the specific ionization of working gas can be improved and effectively utilize the energy of electronics.The feature of magnetron sputtering is that rate of film build is high, and substrate temperature is low, and the adhesivity of film is good, can realize large-area coating film.
And in magnetron sputtering coating system, magnetron sputtering target rifle is its core component, the stability when structure of magnetron sputtering target rifle and long-term operation all plays critical effect to sputter rate, target utilization and film deposition rate and film-formation result.Magnetron sputtering target rifle its be structurally generally divided into plane magnetic controlled sputtering target and column magnetic control sputtering target.But no matter be that plane magnetic controlled sputtering target generally all needs on magnetron sputtering target, to form the consistent ring-type magnetic target closed of field direction in order to strengthen plasma discharge and vapour deposition with column magnetic control sputtering target.But the magnetic target of this ring-type can make the ion bondage be ionized bombard target thus make the ion of target fly out in this annular magnetic target is deposited on anode, the target being positioned at described annular magnetic target can only be made like this to be utilized, and the target at other position is just wasted.Moreover annular magnetic target can produce a large amount of heats when running up, if do not distributed in time, damage the magnetic target worked possibly, affect the stability of its running, cause sputtering uneven, affect quality of forming film, be unfavorable for the raising of production efficiency and film yield.
Utility model content
The purpose of this utility model is to provide a kind of magnetron sputtering target rifle, has high target utilization, and evenly, quality of forming film is high in sputtering.
For this reason, the utility model is by the following technical solutions:
A kind of magnetron sputtering target rifle, described magnetron sputtering target rifle is cylindrical magnetron sputtering target rifle, comprises pedestal, magnetic target and target, and described magnetic target is fixed on pedestal, and described target is fixed on magnetic target by turning axle; Described magnetic target comprises magnetic core and ringshaped magnet seat, and described ringshaped magnet seat is provided with evenly distributed magnet piece, forms the ring-type magnetic target design of center-outer shroud; Be provided with refrigerating unit between described magnetic core and ringshaped magnet, described refrigerating unit comprises upper and lower two oxygen free copper water-cooleds and the heat-conducting plate between upper and lower two oxygen free copper water-cooleds.
Preferably, described turning axle is positioned on magnetic core.
Preferably, described magnetron sputtering target rifle also comprises bench insulator and vacuum electrode, and described bench insulator and vacuum electrode are positioned at below pedestal.
Preferably, described bench insulator is provided with copper pipe electrode and introduces, and introduces electrode and is connected with vacuum electrode.
Preferably, described bench insulator is Teflon bench insulator.
Preferably, described heat-conducting plate is aluminium nitride ceramics heat-conducting plate.
Preferably, described magnetron sputtering target rifle also comprises shell.
Preferably, the material of described pedestal is 430 stainless steels.
The utility model adopts above technical scheme, adopts the ring-type magnetic target of unique center-outer shroud to design, makes magnetic field cover target comprehensively, improves the utilization ratio of target; Adopt between upper and lower two oxygen free copper water-cooleds simultaneously and heat-conducting plate formation refrigerating unit is set, timely and effectively the heat produced in magnetic target operation process can be distributed, ensure the stability of magnetic target long-term operation, to reach sputtering evenly, deposition obtains the object of superior in quality film.
Accompanying drawing explanation
Fig. 1 is the structural outer schematic diagram of the utility model magnetron sputtering target rifle.
Fig. 2 is the structure cross-sectional schematic of the utility model magnetron sputtering target rifle.
Fig. 3 is the sectional schematic diagram of the magnetic target part of the utility model magnetron sputtering target rifle.
Embodiment
In order to make the purpose of this utility model, feature and advantage more clear, below in conjunction with drawings and Examples, explanation is specifically made to embodiment of the present utility model, in the following description, set forth a lot of concrete details so that understand the utility model fully, but the utility model can be implemented in other modes being much different from description.Therefore, the utility model is not by the restriction of the concrete enforcement of following discloses.
A kind of magnetron sputtering target rifle, as shown in Figure 1, Figure 2, Figure 3 shows, described magnetron sputtering target rifle is cylindrical magnetron sputtering target rifle, comprises pedestal 1, magnetic target 2 and target 3, and described magnetic target 2 is fixed on pedestal 1, and described target 3 is fixed on magnetic target 2 by turning axle 4; Described magnetic target 2 comprises magnetic core 21 and ringshaped magnet seat 22, and described ringshaped magnet seat 22 is provided with evenly distributed magnet piece 23, forms the ring-type magnetic target design of center-outer shroud; Be provided with refrigerating unit 5 between described magnetic core 21 and ringshaped magnet seat 22, described refrigerating unit 5 comprises upper and lower two oxygen free copper water-cooleds 51 and the heat-conducting plate 52 between upper and lower two oxygen free copper water-cooleds 51.
Wherein, described turning axle 4 is positioned on magnetic core 21.
Wherein, described magnetron sputtering target rifle also comprises bench insulator 6 and vacuum electrode 7, and described bench insulator 6 and vacuum electrode 7 are positioned at below pedestal 1.
Wherein, described bench insulator 6 is provided with copper pipe electrode and introduces 8, is connected with vacuum electrode 7 for introducing electrode.
Wherein, described bench insulator 6 is Teflon bench insulator.
Wherein, described heat-conducting plate 52 is aluminium nitride ceramics heat-conducting plate.
Wherein, described magnetron sputtering target rifle also comprises shell 0, in order to protect magnetic target and refrigerating unit, avoids being sputtered.。
Wherein, the material of described pedestal 1 is 430 stainless steels.
Magnetron sputtering target rifle described in the utility model, adopts the ring-type magnetic target design of unique center-outer shroud, makes magnetic field cover target, the magnetic field of balanced all directions comprehensively, improve the plasma density of coating film area, improve the utilization ratio of target; Adopt between upper and lower two oxygen free copper water-cooleds simultaneously and heat-conducting plate formation refrigerating unit is set, and adopt the aluminium nitride ceramics with high thermal conductivity as heat-conducting plate, timely and effectively the heat produced in magnetic target operation process can be distributed, ensure the stability of magnetic target long-term operation, to reach sputtering evenly, deposition obtains the object of superior in quality film.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection domain of the present utility model.
Claims (8)
1. a magnetron sputtering target rifle, is characterized in that: described magnetron sputtering target rifle is cylindrical magnetron sputtering target rifle, comprises pedestal, magnetic target and target, and described magnetic target is fixed on pedestal, and described target is fixed on magnetic target by turning axle; Described magnetic target comprises magnetic core and ringshaped magnet seat, and described ringshaped magnet seat is provided with evenly distributed magnet piece, forms the ring-type magnetic target design of center-outer shroud; Be provided with refrigerating unit between described magnetic core and ringshaped magnet, described refrigerating unit comprises upper and lower two oxygen free copper water-cooleds and the heat-conducting plate between upper and lower two oxygen free copper water-cooleds.
2. a kind of magnetron sputtering target rifle according to claim 1, is characterized in that: described turning axle is positioned on magnetic core.
3. a kind of magnetron sputtering target rifle according to claim 1, is characterized in that: described magnetron sputtering target rifle also comprises bench insulator and vacuum electrode, and described bench insulator and vacuum electrode are positioned at below pedestal.
4. a kind of magnetron sputtering target rifle according to claim 3, is characterized in that: described bench insulator is provided with copper pipe electrode and introduces, and introduces electrode and is connected with vacuum electrode.
5. a kind of magnetron sputtering target rifle according to claim 3 or 4, is characterized in that: described bench insulator is Teflon bench insulator.
6. a kind of magnetron sputtering target rifle according to claim 1, is characterized in that: described heat-conducting plate is aluminium nitride ceramics heat-conducting plate.
7. a kind of magnetron sputtering target rifle according to claim 1, is characterized in that: described magnetron sputtering target rifle also comprises shell.
8. a kind of magnetron sputtering target rifle according to claim 1, is characterized in that: the material of described pedestal is 430 stainless steels.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520477129.1U CN204779787U (en) | 2015-07-04 | 2015-07-04 | Magnetron sputtering target rifle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520477129.1U CN204779787U (en) | 2015-07-04 | 2015-07-04 | Magnetron sputtering target rifle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204779787U true CN204779787U (en) | 2015-11-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520477129.1U Active CN204779787U (en) | 2015-07-04 | 2015-07-04 | Magnetron sputtering target rifle |
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| CN (1) | CN204779787U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI641712B (en) * | 2017-12-04 | 2018-11-21 | 國家中山科學研究院 | Heating stage device applied to sputtering target gun |
| CN112831762A (en) * | 2020-11-20 | 2021-05-25 | 南京大学 | Magnetron sputtering target gun with Halbach permanent magnet structure |
-
2015
- 2015-07-04 CN CN201520477129.1U patent/CN204779787U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI641712B (en) * | 2017-12-04 | 2018-11-21 | 國家中山科學研究院 | Heating stage device applied to sputtering target gun |
| CN112831762A (en) * | 2020-11-20 | 2021-05-25 | 南京大学 | Magnetron sputtering target gun with Halbach permanent magnet structure |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: The torch hi tech Zone Park Albert house building S301c room 361015 Xiamen city of Fujian Province Patentee after: Xiamen G-CVD Graphene Technology Co., Ltd. Address before: The torch hi tech Zone Park Albert house building S301C room 361015 Xiamen city of Fujian Province Patentee before: Xiamen G-CVD Material Technology Co., Ltd. |
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| TR01 | Transfer of patent right |
Effective date of registration: 20190108 Address after: Room 0120, Building No. 1, 311 Yanxin Road, Huishan Economic Development Zone, Wuxi City, Jiangsu Province Patentee after: WUXI HUICHENG GRAPHITE ALKENE TECHNOLOGY APPLICATION CO., LTD. Address before: Room S301c, South Building, Weiye Building, Pioneer Park, Xiamen Torch High-tech Zone, Fujian Province, 361015 Patentee before: Xiamen G-CVD Graphene Technology Co., Ltd. |
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| TR01 | Transfer of patent right |