CN203489968U - Terahertz wave far field detection super diffraction resolution imager - Google Patents
Terahertz wave far field detection super diffraction resolution imager Download PDFInfo
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- CN203489968U CN203489968U CN201320594920.1U CN201320594920U CN203489968U CN 203489968 U CN203489968 U CN 203489968U CN 201320594920 U CN201320594920 U CN 201320594920U CN 203489968 U CN203489968 U CN 203489968U
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Abstract
The utility model relates to the field of terahertz spectrum imaging technology, and specifically relates to a terahertz wave far field detection super diffraction resolution imager. The utility model aims at solving technical problems in the prior art and providing the terahertz wave far field detection super diffraction resolution imager, by employing the imager, the space resolution of terahertz wave far field imaging is increased to micrometer magnitude, the terahertz imaging quality is improved, and the application of the terahertz imaging technology is extended. The terahertz wave far field detection super diffraction resolution imager comprises a terahertz emitter, a laser generating device, an angle converting device, an aperture imaging device, a terahertz detector, a lock-in amplifier and the like. The terahertz wave far field detection super diffraction resolution imager is applied in the field of terahertz spectrum imaging technology.
Description
technical field
The utility model relates to tera-hertz spectra technical field of imaging, especially relates to a kind of THz wave far field and surveys super diffraction resolution imaging instrument.
Background technology
The same can being used for to object imaging of electromagnetic radiation of THz wave and its all band, and at terahertz wave band, all can have the characteristics such as dactylogram according to most material of Terahertz, make terahertz imaging compare other imaging modes and have more advantage.
Nineteen ninety-five, Hu etc. increase two-dimensional scan translation stage in THz-TDS system, realize first the imaging of pulse terahertz time-domain spectroscopy, and successfully to sample imagings such as leaf, chips.The spectral information of the sample obtaining due to this formation method, not only can implementation structure imaging, and can practical function imaging, along with understanding in depth THz wave new features, THz imaging technology fast development is got up, emerged many such as the imaging of Terahertz two dimension electro-optic sampling, tomography, the field imaging of Terahertz chirped pulse time domain, Near-Field Radar Imaging, THz continuous wave imaging etc., can apply and the various fields such as biomedicine, quality testing, safety inspection, Non-Destructive Testing.
For terahertz time-domain spectroscopy imaging system, the data acquisition that obtains is actual is the data (two-dimensional space (x, y) axially and one dimension time shaft to) of three-dimensional space-time.Utilize this three-dimensional data set can obtain the Terahertz image of a series of samples, the i.e. film of picosecond magnitude.The quantity of information comprising due to the Terahertz image on a time point in addition seldom, so conventionally will obtain the data acquisition of whole three-dimensional.And the reconstruct of Terahertz image time delay in the special parameter based on terahertz time-domain waveform or orientation normally.
THz imaging technology, with its unique spectral characteristic and penetrability, all has a wide range of applications in fields such as physics, chemistry, biomedicine, safety checks.But because the wavelength of THz wave is grown (1THz wavelength is 0.3mm), be subject to the restriction of diffraction effect, the spatial resolution of terahertz imaging, in submillimeter magnitude, has limited its image quality, is difficult to use in the imaging of fine structure.The approach addressing this problem is at present (from Rayleigh criterion by near field imaging technique, the restriction of THz imaging technology Existential Space lack of resolution, limited thus the practical of THz wave imaging technique, so need to break through diffraction limit, improve the spatial resolution of terahertz imaging system.Evanescent wave is with the increase of distance with exponential damping, and propagation distance, in a wavelength, cannot arrive at the picture plane of traditional imaging device.If detector is positioned over to (within a wavelength) near sample, just may detect evanescent wave, just can carry out the high-resolution imaging of sub-wavelength to sample thus, this is Near-Field Radar Imaging technology.) be applied to terahertz imaging.But because Near-Field Radar Imaging requires sample, be close to probe, system architecture complexity and universality are poor, have limited to a great extent the range of application that super diffraction is differentiated THz imaging technology.The THz wave far field detection imaging technology that can realize micron dimension imaging resolution characteristic is never solved.
Utility model content
Technical problem to be solved in the utility model is: the problem existing for prior art, provide a kind of THz wave far field to survey super diffraction resolution imaging instrument, the spatial resolving power of THz wave far field imaging is brought up to micron dimension, improve terahertz imaging quality, expand the application of THz imaging technology.
the technical solution adopted in the utility model is as follows:
THz wave far field is surveyed super diffraction resolution imaging instrument and is comprised: a terahertz transmitter, for generation of THz wave; Laser generator, for generation of laser beam, and carries out laser beam modulation; Angle converter, for regulating laser beam incident angle, THz wave incident angle, makes laser beam incident angle, THz wave incident angle identical, and laser beam, THz wave central point overlap; Described THz wave produces by terahertz transmitter; Aperture imaging device, for by laser beam, THz wave after regulating by angle converter, focuses on the test window of aperture imaging device; The imaging of realization to sample, wherein aperture imaging device moves by two-dimensional scan translation stage; Terahertz detector, for surveying the THz wave of sample reflection or transmission, and exports corresponding electric signal; Lock-in amplifier, the reference signal producing for receiving laser generator receives the electric signal that terahertz detector is exported simultaneously, carries out signal extraction and amplification, obtains sample image; Terahertz transmitter, laser generator are connected with aperture imaging device to test window light by angle converter respectively, aperture imaging device output terminal is connected with terahertz detector light, laser generator is connected with lock-in amplifier one input end, another input end of terahertz detector output terminal and lock-in amplifier is connected, lock-in amplifier output sample signal, computing machine receives lock-in amplifier output signal and reconstructs sample image.
Described laser generator comprises laser instrument, chopper, first lens, the laser beam of described laser instrument output focuses on aperture imaging device by first lens, angle converter after changing, described chopper is exported its service frequency signal to lock-in amplifier one input end, the service frequency signal of chopper output is as with reference to signal, described first lens is that the laser beam by chopper is focused on, and makes sample outline diameter Y
rfor the laser optical beam diameter G after modulation
rmeet Y
r>=2G
r.
Described aperture imaging device comprises: the fused quartz layer that forms test window, vanadium dioxide film layer and sample layer, described vanadium dioxide film layer both ends of the surface are close to fused quartz layer lower surface and sample layer upper surface respectively, described THz wave, modulated laser focused is in fused quartz layer lower surface, described vanadium dioxide film layer upper surface and fused quartz layer lower surface are close to, sample upper surface is close to vanadium dioxide film layer lower surface, the THz wave of the transmission of sample lower surface or the reflection of sample upper surface receives by terahertz detector.
When described angle converter is electro-conductive glass: the laser beam that laser generator produces sees through electro-conductive glass, incide subsequently aperture imaging apparatus surface, the THz wave that terahertz light spectral apparatus produces reflexes to aperture imaging apparatus surface by electro-conductive glass; When angle converter is silicon chip: the laser beam that laser instrument produces reflexes to aperture imaging apparatus surface by silicon chip; The THz wave that terahertz light spectral apparatus produces sees through silicon chip, incides subsequently aperture imaging apparatus surface.
THz wave far field is surveyed super diffraction resolution imaging instrument and is also comprised second lens, and described the second lens focus on the THz wave of terahertz transmitter output, then the THz wave after focusing on is input to angle converter.
In sum, owing to having adopted technique scheme, the beneficial effects of the utility model are:
1) utilize laser focusing to realize the spacescan to sample, imaging space resolution is determined by laser focusing spot size, because size after laser facula line focus can reach micron dimension, therefore make terahertz imaging break through the restriction of Terahertz wavelength, can realize the spatial resolving power of micron dimension.
2) utilize phase-locked amplification skill device to realize the extraction to tiny differential imaging signal, its advantage is: can obtain the feeble signal of the difference of micro-meter scale sample, realize the accurate imaging to sample.
3) this device can be realized reflective and two kinds of imaging modes of transmission-type (refer to the detection mode of terahertz wave detector, reflective terahertz wave detector fused quartz window one side in Fig. 2 that refers to is surveyed; Reflective terahertz detector sample 8 one sides in Fig. 2 that refer to are surveyed), be applicable to different samples and (for example survey the words of metal sample, because it is more that metal pair THz wave absorbs, therefore adopt reflectively, from fused quartz one side, survey; Survey wood, because wood absorbs seldom THz wave, can adopt transmission-type, from sample one side, survey) and diagnostic requirements, application is extensive.
Accompanying drawing explanation
The utility model will illustrate by example and with reference to the mode of accompanying drawing, wherein:
A kind of embodiment theory diagram of Fig. 1 the utility model.
Fig. 2 aperture imaging device.
Fig. 3 a, 3b are Terahertz hot spot schematic diagram.
Reference numeral:
1-laser instrument 2-chopper 3-first lens
4-terahertz transmitter 5-angle converter 6-terahertz detector
7-lock-in amplifier 8-aperture imaging device 9-processor
10-the second lens.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
One, the utility model related description:
1, this device principle of work:
1) ultimate principle of terahertz imaging: utilize terahertz imaging system that the information of the transmission spectrum of imaging sample or reflectance spectrum (two information that comprise amplitude and phase place) is processed, analyzed, obtain the Terahertz image of sample.The basic comprising of terahertz imaging system is compared with terahertz time-domain spectroscopy, many image processing apparatus and scan controllers.Utilize reflective scan or the transmission scan can imaging, this depends primarily on the character of imaging sample and imaging system.According to different needs, can adopt different formation methods.
2) this imager is on terahertz imaging basic principle basis, by aperture imaging device, to sample imaging, carries out, by terahertz detector, sample image is carried out to reflective detection or transmission-type is surveyed, and obtains terahertz imaging image; When wherein for example sample is metal (because metal pair THz wave absorbs more abundant), terahertz detector adopts reflective detection, surveys the THz wave of sample upper surface reflection; For example, when sample is wood (wood is inhaled seldom THz wave), terahertz detector adopts transmission-type to survey, and surveys the THz wave of sample lower surface transmission.
3) by lock-in amplifier, receive the frequency signal of terahertz detector and chopper output, carry out extraction and the amplification of sample image feeble signal.Further, can to lock-in amplifier output signal, carry out analyzing and processing by processor.
2, fused quartz layer is that fused quartz forms; Vanadium dioxide film layer is that vanadium dioxide forms, and described vanadium dioxide film layer (vanadium dioxide film layer upper surface) is plated in fused quartz layer lower surface; Sample layer is to have sample to form, and sample layer upper surface is close to vanadium dioxide film layer lower surface.
3, the aperture imaging device with sample is positioned on two-dimensional scan translation stage, according to coordinate x coordinate and Y coordinate, is starting point, carries out the two-dimensional scan of directions X and Y-direction.Make Terahertz involve laser beam and scan successively sample.Described directions X refers to the horizontal of two-dimensional scan translation stage.It is longitudinal that Y-direction refers to two-dimensional scan translation stage.
Two, the utility model forms:
1, as shown in Figure 1, comprising: terahertz transmitter, for generation of THz wave; Laser generator, for generation of laser beam, and carries out laser beam modulation; Angle converter, for regulating laser beam incident angle, THz wave incident angle, makes laser beam incident angle, THz wave incident angle identical, and laser beam, THz wave central point overlap; Described THz wave produces by terahertz transmitter; Laser beam incident angle refers to the incident angle that laser beam incides aperture imaging device to test window, and THz wave incides the incident angle of aperture imaging device to test window; Aperture imaging device, for by laser beam, THz wave after regulating by angle converter, focuses on the test window of aperture imaging device; The imaging of realization to sample, wherein aperture imaging device moves by two-dimensional scan translation stage; Terahertz detector, for surveying the THz wave of sample reflection or transmission, and exports corresponding electric signal; Lock-in amplifier, the reference signal producing for receiving laser generator receives the electric signal that terahertz detector is exported simultaneously, carries out signal extraction and amplification, obtains sample information.Another building form is just exchanged above-mentioned laser generator and terahertz transmitter position.
Further, a kind of THz wave far field is surveyed super diffraction resolution imaging instrument and is also comprised processor, display, for the sample information of lock-in amplifier output is carried out to picture signal analysis, by display, the signal of processor analysis is carried out to image demonstration.
2, aperture imaging device:
As shown in Figure 2, comprise the fused quartz layer that forms test window, vanadium dioxide film layer and sample layer, described vanadium dioxide film layer both ends of the surface are close to fused quartz layer lower surface and sample layer upper surface respectively, described THz wave, modulated laser focused is in fused quartz layer lower surface, described vanadium dioxide film layer upper surface and fused quartz layer lower surface are close to, sample upper surface is close to vanadium dioxide film layer lower surface, the THz wave of the transmission of sample lower surface or the reflection of sample upper surface receives by terahertz detector.As shown in Figure 3, terahertz light shape of spot, wherein Fig. 3 a is during without laser pumping vanadium dioxide film layer, sees through vanadium dioxide film and gets to the terahertz light shape of spot on sample; Fig. 3 b is while having laser pumping vanadium dioxide, sees through vanadium dioxide film and gets to the terahertz light shape of spot on sample.
Vanadium dioxide film layer thickness in monolayer is generally at nanoscale.Fused quartz layer thickness millimeter magnitude.Sample thickness is for reflective measurement, and sample can be any thickness, for transmission-type, measures, and sample thickness is less than and equals submillimeter yardstick.
3, the inverse of chopper frequency of operation is than low at least one the order of magnitude integral time of lock-in amplifier.
4, the lock-in amplifier course of work is: the service frequency signal that described lock-in amplifier one input end receives chopper output is as with reference to signal, extracting according to this another input end of lock-in amplifier receives THz wave difference electric signal (THz wave difference electric signal is that the THz wave hot spot electric signal that a square-wave signal is the cycle is take in terahertz detector output, and the square-wave signal cycle is corresponding with chopper frequency of operation.When corresponding output does not have laser pumping vanadium dioxide film layer with the semiperiod before chopper frequency of operation, THz wave sees through vanadium dioxide film layer and gets to electric signal corresponding to Terahertz hot spot forming on sample; When corresponding output has laser pumping vanadium dioxide film layer with the later half cycle of chopper frequency of operation, THz wave sees through vanadium dioxide and gets to electric signal corresponding to Terahertz hot spot forming on sample.Square-wave signal is in the cycle, and the difference of the electric signal that the Terahertz light wave corresponding with the front semiperiod of later half cycle is corresponding is THz wave difference electric signal), and this difference electric signal is amplified.Wherein service frequency signal is a square-wave signal, square wave is than being 1:1, the front semiperiod of lock-in amplifier by square-wave signal and later half cycle are corresponding while extracting without laser pumping vanadium dioxide film layer and while having mechanism of laser vanadium dioxide film layer respectively, see through vanadium dioxide film layer and get to electric signal corresponding to Terahertz hot spot on sample.
5, in the design, the distance of terahertz detector and sample is greater than the wavelength of THz wave, is that far field is surveyed; The imaging resolution of this imager, much smaller than the wavelength of THz wave, is super diffraction imaging.
Disclosed all features in this instructions, except mutually exclusive feature, all can combine by any way.
Disclosed arbitrary feature in this instructions (comprising any accessory claim, summary and accompanying drawing), unless narration especially all can be replaced by other equivalences or the alternative features with similar object.That is,, unless narration especially, each feature is an example in a series of equivalences or similar characteristics.
Claims (5)
1. a super diffraction resolution imaging instrument is surveyed in THz wave far field, it is characterized in that comprising:
Terahertz transmitter, for generation of THz wave;
Laser generator, for generation of laser beam, and carries out laser beam modulation;
Angle converter, for regulating laser beam incident angle, THz wave incident angle, makes laser beam incident angle, THz wave incident angle identical, and laser beam, THz wave central point overlap; Described THz wave produces by terahertz transmitter;
Aperture imaging device, for by laser beam, THz wave after regulating by angle converter, focuses on the test window of aperture imaging device; The imaging of realization to sample, wherein aperture imaging device moves by two-dimensional scan translation stage;
Terahertz detector, for surveying the THz wave of sample reflection or transmission, and exports corresponding electric signal;
Lock-in amplifier, the reference signal producing for receiving laser generator receives the electric signal that terahertz detector is exported simultaneously, carries out signal extraction and amplification, obtains sample image;
Terahertz transmitter, laser generator are connected with aperture imaging device to test window light by angle converter respectively, aperture imaging device output terminal is connected with terahertz detector light, laser generator is connected with lock-in amplifier one input end, another input end of terahertz detector output terminal and lock-in amplifier is connected, lock-in amplifier output sample signal, computing machine receives lock-in amplifier output signal and reconstructs sample image.
2. super diffraction resolution imaging instrument is surveyed in a kind of THz wave according to claim 1 far field, it is characterized in that laser generator comprises laser instrument, chopper, first lens, the laser beam of described laser instrument output focuses on aperture imaging device by first lens, angle converter after changing, described chopper is exported its service frequency signal to lock-in amplifier one input end, the service frequency signal of chopper output is as with reference to signal, described first lens is that the laser beam by chopper is focused on, and makes sample outline diameter Y
rfor the laser optical beam diameter G after modulation
rmeet Y
r>=2G
r.
3. super diffraction resolution imaging instrument is surveyed in a kind of THz wave according to claim 1 far field, it is characterized in that described aperture imaging device comprises: the fused quartz layer that forms test window, vanadium dioxide film layer and sample layer, described vanadium dioxide film layer both ends of the surface are close to fused quartz layer lower surface and sample layer upper surface respectively, described THz wave, modulated laser focused is in fused quartz layer lower surface, described vanadium dioxide film layer upper surface and fused quartz layer lower surface are close to, sample upper surface is close to vanadium dioxide film layer lower surface, the THz wave of the transmission of sample lower surface or the reflection of sample upper surface receives by terahertz detector.
4. super diffraction resolution imaging instrument is surveyed in a kind of THz wave according to claim 1 far field, it is characterized in that when described angle converter is electro-conductive glass: the laser beam that laser generator produces sees through electro-conductive glass, incide subsequently aperture imaging apparatus surface, the THz wave that terahertz light spectral apparatus produces reflexes to aperture imaging apparatus surface by electro-conductive glass; When angle converter is silicon chip: the laser beam that laser instrument produces reflexes to aperture imaging apparatus surface by silicon chip; The THz wave that terahertz light spectral apparatus produces sees through silicon chip, incides subsequently aperture imaging apparatus surface.
5. according to a kind of THz wave far field one of claim 1 to 4 Suo Shu, survey super diffraction resolution imaging instrument, characterized by further comprising the second lens, described the second lens focus on the THz wave of terahertz transmitter output, then the THz wave after focusing on are input to angle converter.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103499392A (en) * | 2013-09-26 | 2014-01-08 | 中国工程物理研究院流体物理研究所 | TeraHertz-wave far-field detection super-diffraction resolution imaging instrument |
| CN103884422A (en) * | 2014-03-26 | 2014-06-25 | 中国科学院紫金山天文台 | Quasi-optics type probe for terahertz near-field measurement, detection system and detection method |
| CN107356332A (en) * | 2017-06-28 | 2017-11-17 | 东南大学 | Terahertz transceiving chip, receiving/transmission method and its imaging detection system |
| CN112730315A (en) * | 2020-12-25 | 2021-04-30 | 中国科学院上海微系统与信息技术研究所 | High-resolution terahertz near-field spectrum test system |
-
2013
- 2013-09-26 CN CN201320594920.1U patent/CN203489968U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103499392A (en) * | 2013-09-26 | 2014-01-08 | 中国工程物理研究院流体物理研究所 | TeraHertz-wave far-field detection super-diffraction resolution imaging instrument |
| CN103884422A (en) * | 2014-03-26 | 2014-06-25 | 中国科学院紫金山天文台 | Quasi-optics type probe for terahertz near-field measurement, detection system and detection method |
| CN107356332A (en) * | 2017-06-28 | 2017-11-17 | 东南大学 | Terahertz transceiving chip, receiving/transmission method and its imaging detection system |
| CN112730315A (en) * | 2020-12-25 | 2021-04-30 | 中国科学院上海微系统与信息技术研究所 | High-resolution terahertz near-field spectrum test system |
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