CN202758882U - Trimming device of analog/digital analogy mixed signal processing chip - Google Patents
Trimming device of analog/digital analogy mixed signal processing chip Download PDFInfo
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- CN202758882U CN202758882U CN 201220393409 CN201220393409U CN202758882U CN 202758882 U CN202758882 U CN 202758882U CN 201220393409 CN201220393409 CN 201220393409 CN 201220393409 U CN201220393409 U CN 201220393409U CN 202758882 U CN202758882 U CN 202758882U
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Abstract
The utility model provides a trimming device of an analog/digital analogy mixed signal processing chip. The device is arranged in the chip and comprises a detection module, a controller and a zener diode array module. After acquiring the parameter deviation of the chip through measurement, the detection module detects the state of each zener diode in a zener diode array. The controller generates a control signal according to a trimming signal which is generated according to the parameter deviation of the chip and the state of the zener diodes. The zener diode array module selects a signal and identifies the signal as a corresponding working mode according to the received working mode and carries out breakdown or analog breakdown on the zener diodes according to the control signal. Wafer level test is not carried out before chip packaging. After packaging is completed, the trimming device generates the trimming signal according to measured parameter deviation of the chip and the state of the zener diode array, and carries out breakdown on the zener diodes in the zener diode array module, thus an analog signal parameter is subtly changed, trimming is carried out on the packaged chip, and the qualified rate of the chip is improved.
Description
Technical field
The utility model belongs to chip field, relates in particular to the device that trims of a kind of simulation/digital-to-analogue mixed signal process chip.
Background technology
Chip (core plate) refers to include the silicon chip of integrated circuit, and volume is very little, is generally the part of computer or other equipment.
The making complete procedure of chip comprises several links such as chip design, chip design, encapsulation making, cost test.
In existing simulation/digital-to-analogue hybrid chip, the analog circuit unit that trims in the encapsulation making link adopts metal fuse, polysilicon fuse usually.After chip production was finished, the test result by wafer scale trimmed the closure/blown state that changes fuse, with this trickle change analog signal parameter.But after the encapsulation, the electric parameters after trimming is understood the impact of packed stress and is again changed, and can cause the performance of chip influenced.
Along with more and more higher to the requirement of integrated circuit high performance index, integrated circuit faces high-precision requirement and becomes clear day by day, some electric parameters of chip changes, and the precision of the integrated circuit in the chip can not be met design requirement and causes this chip rejection.
And existing metal fuse that analog circuit unit adopts and the polysilicon fuse of trimming is owing to fused in trimming process, therefore after encapsulation, can't continue some electric parameters that changes of chip is trimmed, so that the qualification rate of chip reduces.
The utility model content
In view of this, the purpose of this utility model is to provide the device that trims of a kind of simulation/digital-to-analogue hybrid chip, can the chip after the encapsulation be trimmed by this device, and its electric property is met design requirement, and improves the qualification rate of chip.
A kind of simulation/digital-to-analogue mixed signal process chip trim device, described device is arranged in the described chip, comprising:
After the parameter error that measures described chip, detect the detection module of each Zener diode state in the zener diode array;
Link to each other with described detection module, first trim signal and generate the first control signal according to what generate when all not puncturing when the parameter error of described chip and described Zener diode state, or according to when the parameter error of described chip and described Zener diode state when partly puncturing generation second trim the controller that signal generates the second control signal;
Link to each other with described detection module with described controller respectively, select signal to be defined as the first mode of operation according to the first mode of operation that receives, puncture respectively according to the Zener diode in described the first control signal zener diode array and to trim, perhaps, select signal to be defined as the second mode of operation according to the second mode of operation that receives, according to described the second control signal described Zener diode is simulated puncture, when puncturing the result, described simulation satisfies first when pre-conditioned, select signal to be defined as the first mode of operation according to the first mode of operation that receives, and puncture respectively the zener diode array module that trims according to the Zener diode in described the second control signal zener diode array.
The above-mentioned device that trims, preferred, also comprise:
Link to each other with described zener diode array module with described detection module respectively, simulation puncture result under the second mode of operation reads to described zener diode array module, and when puncturing the result, described simulation satisfies first when pre-conditioned, the read module that the puncture result of described zener diode array module under the first mode of operation read;
Link to each other with described read module, the described simulation of reading respectively when described read module punctures result and described puncture result satisfied second when pre-conditioned, judge the described end that trims, otherwise, judge that described do not trim finish, and will describedly trim that unclosed result of determination transfers to described detection module so that the judge module of each Zener diode state in the described detection module detection zener diode array.
The above-mentioned device that trims, preferred, described zener diode array module comprises:
Receiving the first mode of operation selects signal or the second mode of operation to select the first receiving port of signal;
Link to each other with described the first receiving port, select signal to determine that described zener diode array module is the first mode of operation according to the first mode of operation that described the first receiving port receives, or select signal to determine the mode of operation selector that described zener diode array module is the second mode of operation according to the second mode of operation that described the first receiving port receives;
When the mode of operation of described zener diode array module is the first mode of operation, receive the first control signal that controller sends; When the mode of operation of described zener diode array module is the second mode of operation, receive the second control signal that controller sends, satisfy first pre-conditioned when described simulation punctures the result, when the mode of operation of described zener diode array module is the first mode of operation, receive the second receiving port of the second control signal of controller transmission;
Link to each other with described the second receiving port with described mode of operation selector respectively, when described Zener diode state punctures for part, described Zener diode is simulated the data register of puncture according to described the second control signal;
Link to each other with described the second receiving port with described mode of operation selector respectively, when described Zener diode state when all not puncturing, puncture respectively according to described the first control signal zener diode and to trim; When described Zener diode state is part when puncturing, when puncturing the result, the described simulation in the data register satisfies first when pre-conditioned, puncture respectively the zener diode array that trims according to described the second control signal zener diode.
The above-mentioned device that trims, preferred, described zener diode array module also comprises:
Link to each other with described zener diode array with described data register respectively, described data register and described zener diode array obtain when trimming respectively trims the serial output terminal mouth that consequential signal carries out serial output.
The above-mentioned device that trims, preferred, also comprise:
Link to each other the parallel output port that described detection module is exported the testing result of each Zener diode state of described zener diode array with described detection module.
The above-mentioned device that trims, preferred, also comprise:
The power supply that links to each other with described zener diode array module with described controller respectively;
The device earth terminal that links to each other with described zener diode array module with described controller respectively.
The above-mentioned device that trims, preferred, also comprise:
Respectively with first electrostatic discharge protective circuit that power end links to each other that connects that connects power end and described zener diode array module of described power supply, described controller;
The second electrostatic discharge protective circuit that links to each other with the earth terminal of the earth terminal of described device earth terminal, described controller and described zener diode array module respectively.
A kind of simulation that the utility model provides/digital-to-analogue mixed signal process chip trim device, described device is arranged in this chip, comprise: after the parameter error that measures chip, detect the detection module of each Zener diode state in the zener diode array; The controller that signal generates control signal that trims according to the parameter error of working as chip and the generation of Zener diode state; Select signal to be defined as corresponding mode of operation according to the mode of operation that receives, puncture or simulate the zener diode array module of puncture according to the control signal zener diode.Before chip package, do not carry out the test of wafer scale, after encapsulation is finished, this trims device and trims signal according to the parameter error of this chip that measures and the state generation of zener diode array, Zener diode in the zener diode array module punctures, with this trickle change analog signal parameter, realized the chip after the encapsulation is trimmed, improved the qualification rate of chip.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the adjusting device embodiment 1 of a kind of simulation of providing of the utility model/digital-to-analogue hybrid chip;
Fig. 2 is the concrete structure schematic diagram of the adjusting device embodiment 1 of a kind of simulation of providing of the utility model/digital-to-analogue hybrid chip;
Fig. 3 is the another kind of structural representation of the adjusting device embodiment 1 of a kind of simulation of providing of the utility model/digital-to-analogue hybrid chip;
Fig. 4 is the structural representation of the adjusting device embodiment 2 of a kind of simulation of providing of the utility model/digital-to-analogue hybrid chip;
Fig. 5 is the structural representation of the adjusting device embodiment 3 of a kind of simulation of providing of the utility model/digital-to-analogue hybrid chip;
Fig. 6 is the concrete use scenes that trims device of a kind of simulation of providing of the utility model/digital-to-analogue mixed signal process chip;
Fig. 7 is the logical sequence oscillogram under the parallel read mode in the concrete use scenes that trims device of a kind of simulation of providing of the utility model/digital-to-analogue mixed signal process chip;
Fig. 8 is the logical sequence oscillogram under the first mode of operation in the concrete use scenes that trims device of a kind of simulation of providing of the utility model/digital-to-analogue mixed signal process chip;
Fig. 9 is a kind of logical sequence oscillogram under the second mode of operation in the concrete use scenes that trims device of a kind of simulation of providing of the utility model/digital-to-analogue mixed signal process chip;
Figure 10 is the another kind of logical sequence oscillogram under the second mode of operation in the concrete use scenes that trims device of a kind of simulation of providing of the utility model/digital-to-analogue mixed signal process chip;
Figure 11 is the logical sequence oscillogram under the serial read mode in the concrete use scenes that trims device of a kind of simulation of providing of the utility model/digital-to-analogue mixed signal process chip.
Embodiment
For the purpose, technical scheme and the advantage that make the utility model embodiment clearer, below in conjunction with the accompanying drawing among the utility model embodiment, technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the utility model protection.
The device that trims of a kind of simulation that the utility model provides/digital-to-analogue mixed signal process chip is arranged in the described chip; encapsulate with described chip; chip after the encapsulation is trimmed; the test of the wafer scale before not needing to encapsulate; after encapsulation is finished, this chip carried out the operation under the mode of operation; obtain performance parameter; the performance parameter of this performance parameter and design is compared; obtain the performance parameter deviation; trim by the puncture of the Zener diode in the zener diode array; with this trickle change analog signal parameter, so that the performance parameter of chip satisfies design.
Referring to Fig. 1, show the structural representation that trims device embodiment 1 of a kind of simulation that the utility model provides/digital-to-analogue mixed signal process chip, comprising: detection module 101, controller 102 and zener diode array module 103.
Wherein, described detection module 101 is used for detecting each Zener diode state in the zener diode array after the parameter error that measures described chip;
Function setting according to simulation/digital-to-analogue mixed signal process chip in the zener diode array has several zener diode array; when the scope that can trim when zener diode array is not less than the performance parameter deviation of this chip; according to this zener diode array chip is trimmed; the performance parameter of chip is got back in the scope of error permission; otherwise; the scope that can trim when zener diode array is during less than the performance parameter deviation of this chip; get back in the scope of error permission even all Zener diodes are punctured the performance parameter that can not make chip, this chip can only be scrapped.
Chip when a scope that the zener diode array can trim is not less than the performance parameter deviation of this chip in the utility model, the chip that namely can trim trims.
Owing in the processes such as production encapsulation, may produce static, high pressure when static discharges may puncture Zener diode, and in the production process of Zener diode, also may be owing to a variety of causes so that Zener diode be breakdown or damage, and then may so that trimming of finishing of encapsulation certain or some Zener diodes are in breakdown conditions or damage in the zener diode array in the device, whether and it is normal to be beyond recognition this Zener diode from outward appearance, so need the state of each Zener diode in the first zener diode array to detect.
The zener diode state carries out in the testing process, and normal Zener diode shows as not conducting, output 0, and puncture or the Zener diode that damages shows as conducting, output 1.
The result who detects is generally: be 0 entirely, namely do not have Zener diode breakdown, all normally, or part is 1, i.e. a part of Zener diode breakdown (this puncture comprises common puncture and damaged).
Wherein, described controller 102 links to each other with described detection module 101, first trim signal and generate the first control signal according to what generate when all not puncturing when the parameter error of described chip and described Zener diode state, or according to when the parameter error of described chip and described Zener diode state second the trimming signal and generate the second control signal of generation when partly puncturing;
All be when not puncturing when detection module 101 detects the state that obtains Zener diode, needn't consider the breakdown state in the Zener diode, the programmer only needs the parameter error according to described chip, setting trims signal for first of zener diode array, controller 102 receive this first trim signal after, trim signal with described first and be converted to the first control signal that can the zener diode array module operates;
When detection module 102 detects the state that obtains Zener diode and punctures for part, the programmer need to consider the position of breakdown Zener diode in zener diode array, parameter error according to described chip, setting trims signal for second of zener diode array, controller 102 receive this second trim signal after, trim signal with described second and be converted to the second control signal that can the zener diode array module operates.
Wherein, described zener diode array module 103 links to each other with described controller 102 with described detection module 101 respectively, select signal to be defined as the first mode of operation according to the first mode of operation that receives, puncture respectively according to the Zener diode in described the first control signal zener diode array and to trim, perhaps, select signal to be defined as the second mode of operation according to the second mode of operation that receives, according to described the second control signal described Zener diode is simulated puncture, when puncturing the result, described simulation satisfies first when pre-conditioned, select signal to be defined as the first mode of operation according to the first mode of operation of receiving, and puncture respectively according to the Zener diode in described the second control signal zener diode array and to trim.
Zener diode claims again voltage stabilizing didoe, its characteristics are: when the reverse voltage above being added in Zener diode surpasses its maximum bearing value, will puncture, and Limited Current when puncturing, Zener diode can not damage, and also has the effect of voltage stabilizing, after the Zener diode power down, puncture and lost efficacy, Zener diode is replied not breakdown conditions.
Referring to the concrete structure schematic diagram shown in Fig. 2, described zener diode array module 103 comprises: the first receiving port 1031, mode of operation selector 1032, the second receiving port 1033, data register 1034 and zener diode array 1035.
Wherein, described the first receiving port 1031 receives the first mode of operation and selects signal or the second mode of operation selection signal;
The mode of operation that 102 transmission of the first receiving port 1031 reception controllers come selects signal to comprise the first mode of operation selection signal and the second mode of operation selection signal.
Described mode of operation selector 1032 links to each other with described the first receiving port 1031, select signal to determine that described zener diode array module 103 is the first mode of operation according to the first mode of operation that described the first receiving port 1031 receives, or select signal to determine that described zener diode array module 103 is the second mode of operation according to the second mode of operation that described the first receiving port 1031 receives;
Mode of operation selector 1032 receives the mode of operation selection signal that 1031 transmission of the first receiving port come, and determines the mode of operation of zener diode array module 103 according to this selection signal.
What come when the transmission of the first receiving port 1031 is that the first mode of operation is selected signal, and mode of operation selector 1032 determines that the mode of operation of zener diode array modules 103 is the first mode of operation; What come when the transmission of the first receiving port 1031 is that the second mode of operation is selected signal, and mode of operation selector 1032 determines that the mode of operation of zener diode array modules 103 is the second mode of operation.
When the mode of operation of described zener diode array module 103 was the first mode of operation, described the second receiving port 1033 received the first control signal that controller 102 sends; When the mode of operation of described zener diode array module 103 is the second mode of operation, described the second receiving port 1033 receives the second control signal that controller 102 sends, satisfy first pre-conditioned when described simulation punctures the result, when the mode of operation of described zener diode array module 103 is the first mode of operation, receive the second control signal that controller 102 sends;
Described data register 1034 links to each other with described the second receiving port 1033 with described mode of operation selector 1032 respectively, when described Zener diode state punctures for part, according to described the second control signal described Zener diode is simulated puncture;
When the mode of operation of described zener diode array module 103 is the second mode of operation, the state that is described Zener diode punctures for part, in the data register 1034 of described zener diode array module 103, according to described the second control signal described Zener diode is simulated puncture, the result that namely the simulation zener diode punctures in data register, such as, represent the normal of Zener diode with 0,1 expression punctures, detection module 101 zener diode obtain first Zener diode when detecting be what punctured, the Zener diode that does not then puncture according to the second control signal is 1000000..., need in the second control signal third and fourth Zener diode when zener diode punctured, then wherein the numeral 0 of the 3rd and the 4th expression Zener diode is changed to 1, becomes 1011000....And the Zener diode in the real zener diode array is not breakdown, also keeps original state.
Described zener diode array 1035 links to each other with described the second receiving port 1033 with described mode of operation selector 1032 respectively, when described Zener diode state when all not puncturing, puncture respectively according to described the first control signal zener diode and to trim; When described Zener diode state is part when puncturing, when puncturing the result, the described simulation in the data register 1034 satisfies first when pre-conditioned, and puncture respectively according to described the second control signal zener diode and trim.
When the mode of operation of described zener diode array module 103 is the first mode of operation, the state that is described Zener diode all is not puncture, in described zener diode array module 103, according to described the first control signal described Zener diode is punctured, for example represent the normal of Zener diode with 0,1 expression punctures, when not having zener diode to puncture, Zener diode is 0, in the first control signal expression need zener diode first and the 3rd puncture, then first Zener diode in the zener diode array 103 and the 3rd Zener diode puncture, wherein first numeral 0 with the 3rd expression Zener diode is changed to 1, becomes 1010000....
When described Zener diode state punctures for part, it is first pre-conditioned that the puncture result who according to described the second control signal described Zener diode is simulated puncture in the data register 1034 of described zener diode array module 103 satisfies, when the result and second that i.e. simulation in data register 1034 punctures trims purpose that signal wants to reach and is consistent, what 1031 transmission of the first receiving port came is that the first mode of operation is selected signal, mode of operation selector 1032 determines that the mode of operation of zener diode array module 103 is the first mode of operation, when the mode of operation of described zener diode array module 103 is the first mode of operation, the second receiving port 1033 receives the second control signal that controllers 102 send, and zener diode array 1035 punctures respectively according to described the second control signal zener diode and trims.Such as, represent the normal of Zener diode with 0,1 expression punctures, detection module 101 zener diode obtain first Zener diode when detecting be what punctured, then Zener diode is 1000000..., need in the second control signal third and fourth Zener diode when zener diode punctured, then wherein the numeral 0 of the 3rd and the 4th expression Zener diode is changed to 1, become 1011000..., Zener diode in the zener diode array is punctured, so that this second trims signal edit and enter zener diode array.
In the embodiment that the utility model provides, detect outside the detection module setting and described zener diode array module of a Zener diode state in the zener diode array, arranged side by side with the zener diode array module, but be not limited to this, in reality is implemented, also described detection module can be arranged in the zener diode array module.
Show the another kind of structural representation of the device of the adjusting simulation/digital-to-analogue hybrid chip that present embodiment 1 provides referring to Fig. 3, also comprise: power supply 104, device earth terminal 105, the first electrostatic discharge protective circuit 106 and the second electrostatic discharge protective circuit 107.
Wherein, described power supply 104 links to each other with described zener diode array module 103 with described controller 102 respectively, for controller 102 and zener diode array module 103 provide driving voltage;
Described device earth terminal 105 links to each other with described zener diode array module 103 with described controller 102 respectively, guarantees the safety of controller 102 and zener diode array module 103;
Described the first electrostatic discharge protective circuit 106 links to each other with the power end that connects that connects power end and described zener diode array module 103 of described power supply 104, described controller 102 respectively;
The second electrostatic discharge protective circuit 107 links to each other with the earth terminal of described device earth terminal 105, described controller 102 and the earth terminal of described zener diode array module 103 respectively.
ESD(electrical-static discharge, static discharge) be one of most important integrity problem in the current integrated circuit.Because have that wire spacing is short, line is thin, integrated level is high between highdensity integrated circuit (IC)-components, fast operation, low-power and input impedance high, thereby cause this class device responsive to static, and the energy of static discharge, may cause inefficacy because of static electric field and static discharge current to these high density integrated circuit elements, or cause " soft breakdown " phenomenon that is difficult to be it is found that, cause equipment locked, reset, loss of data and unreliable and affect equipment normal operation, so that equipment dependability reduces, even cause the damage of equipment.
Trim position that each device of device links to each other first electrostatic discharge protective circuit 106 of connecting at power supply 104 and this and can prevent the effect of static herein; Second electrostatic discharge protective circuit 107 of connecting in the position that device earth terminal 105 links to each other with this each device that trims device can prevent the effect of static herein.Two electrostatic discharge protective circuits can guarantee that this trims device and is not destroyed by electrostatic interference.
The device that trims of from the above, a kind of simulation of providing of the utility model embodiment/digital-to-analogue mixed signal process chip comprises: detection module, controller and zener diode array module.After the parameter error that measures chip, detect the detection module of each Zener diode state in the zener diode array; The controller that signal generates control signal that trims according to the parameter error of working as chip and the generation of Zener diode state; Select signal to be defined as corresponding mode of operation according to the mode of operation that receives, puncture or simulate the zener diode array module of puncture according to the control signal zener diode.Trimming in the device that the utility model provides, before chip package, do not carry out the test of wafer scale, after encapsulation is finished, this trims device and trims signal according to the parameter error of this chip that measures and the state generation of zener diode array, Zener diode in the zener diode array module punctures, with this trickle change analog signal parameter, realized the chip after the encapsulation is trimmed, improved the qualification rate of chip.
Show the structural representation of the device of the adjusting simulation/digital-to-analogue hybrid chip that present embodiment 2 provides referring to Fig. 4, on structure shown in Figure 3, also comprise: read module 108 and judge module 109
Wherein, described read module 108 links to each other with described zener diode array module 103 with described detection module 101 respectively, simulation puncture result under the second mode of operation reads to described zener diode array module 103, and satisfying first when pre-conditioned when described simulation punctures the result, the puncture result under the first mode of operation reads to described zener diode array module 103;
When described Zener diode state punctures for part, trim in the setting up procedure of signal carrying out second, the situation of part Zener diode breakdown in the Zener diode is also taken into account, when second trimming the second control signal that signal is converted to is simulated zener diode array in data register 1034 puncture situation according to this, 108 pairs of simulations of described read module puncture the result and read; When puncturing the result, described simulation satisfies first when pre-conditioned, zener diode array module 103 punctures according to the Zener diode in the zener diode array 1035 of described the second control signal zener diode array module 103 under the first mode of operation, and 108 pairs of these punctures of read module are the result read.
Be that the two is identical or when satisfying error range, the performance parameters that can obtain chip trims back scope of design when simulation punctures the result with puncturing result satisfied second pre-conditioned.
When simulation puncture the result with puncture the result satisfied second pre-conditioned be that the two is different or when not satisfying error range, explanation in zener diode array certain or some before array punctures the expression puncture be common puncture rather than damage, because this puncture can recover, so that the result who punctures after finishing is different from the result that simulation punctures, so need again the zener diode array to puncture.
Because the characteristic of Zener diode only needs a zener diode array carry out power down, when again powering on, it is 0 normally that the Zener diode that before is expressed as puncture shows as again, and the Zener diode that has damaged continues to be expressed as that to puncture be 1.
The device that trims of from the above, a kind of simulation of providing of the utility model embodiment 2/digital-to-analogue mixed signal process chip also comprises: read module and judge module.Read module is respectively to simulating the result of puncture in the second control signal zener diode array module and the result of puncture reads, and whether judge module punctures the result according to simulation and punctures the result judges that this trims and finish.
Show the structural representation of the device of the adjusting simulation/digital-to-analogue hybrid chip that present embodiment 3 provides referring to Fig. 5; on structure shown in Figure 3; shown device also comprises parallel output port 110, and described zener diode array module 103 also comprises: serial output terminal mouth 1036.
Serial output terminal mouth 1036 links to each other with described zener diode array 1035 with described data register 1034 respectively, and the consequential signal that trims that described data register 1034 and described zener diode array 1035 obtain when trimming respectively carries out serial output;
Trim in the process, need the simulation puncture result that will in described data register 1034, simulate puncture to export read module 108 to, when puncturing the result, described simulation satisfies first when pre-conditioned, also need the puncture result who in described zener diode array 1035, to puncture to export read module 108 to, adopt serial output terminal mouth 1036 that its serial is exported in the read module 108.
When detection module 101 zener diode arrays detect, the state of each Zener diode in the zener diode array need to be exported the state parallel output of each Zener diode that parallel output port 110 detects detection module 101.
In actual the enforcement, when described detection module was arranged in the zener diode array module, this parallel output port also was arranged in the zener diode array module.
The device that trims of from the above, a kind of simulation of providing of the utility model embodiment 3/digital-to-analogue mixed signal process chip also comprises: serial output terminal mouth and parallel output port.Described data register and described zener diode array obtain the serial output terminal mouth when trimming respectively trims consequential signal and carry out serial and export in the read module; The parallel output port carries out parallel output with described detection module to the testing result of each Zener diode state of described zener diode array.
Show the concrete use scenes that trims device of a kind of simulation that the utility model embodiment provides/digital-to-analogue mixed signal process chip referring to Fig. 6.
This that provides at the utility model trims in the use scenes of device, exactly detection module has been considered as a part in the zener diode array module.First of controller input trims signal and second and trims signal by PROG port and the input of PWI port; The first receiving port of zener diode array module is comprised of RESETN port and CLK1 port, and the second receiving port is the ZEN port, and the parallel output port is REG＜1:7 〉, the serial output terminal mouth is DATAOUT; ESD is electrostatic discharge protective circuit.
In the implementation, what the PROG port was inputted is the direct current program voltage; What the PWI port was inputted uses pulse width signal for programming; The control signal that controller generates outputs in the zener diode array module by the ZEN end.
Logical sequence oscillogram under the parallel read mode as shown in Figure 7, when CLK1 is high level, when RESETN is low level, enters parallel read mode, namely detection module reads the state of each Zener diode in the zener diode array.After the RESET rising edge of a pulse triggered, CLK2 inputted when effective, and the Zener diode state begins to be read.Each rising edge of CLK2 is transferred to the digital logic level value of Zener diode in the data register.CLK2 this moment is as the clock signal of reading state.CLOCKGEN2 is as the external logic signal, and after it stopped transmission, read cycle finished.With data reading, pending data reads complete by the parallel output port, and data register switches to power-down mode.
Logical sequence oscillogram under the first mode of operation as shown in Figure 8, when CLK1 is low level, when RESENT was low level, the first mode of operation was that programming mode triggers.After the rising edge of RESETN pulse triggered, first Zener diode began breakdown, and when treating the next rising edge arrival of CLK1, second Zener diode is breakdown, by that analogy, realizes the puncture function of Zener diode.Programming pulse PW1 1 microsecond of must when CLK1 or RESETN rising edge signal arrive, delaying time.Typical programming time is 3 microseconds, and the CLK1 maximum clock frequency is 100KHz.
A kind of logical sequence oscillogram under the second mode of operation as shown in Figure 9, the second mode of operation of utilizing the PROG port to realize is pseudo-programming mode, logic high can not surpass 3V.The input current of PROG end can not surpass 500 microamperes, avoids causing the mistake programming.After n clock cycle, the data of parallel output port are effective.When CLK1 is low, RESETN is when low, and pseudo-programming state is effective.After first rising edge of RESETN triggered, CLK2 was effective.First test bit must be at the later time-delay of RESENT rising edge arrival t1=100ns.Before the selected folding programming of Zener diode, because technique is so that the signal of the d type flip flop in the data register of input zener diode array module must leading t2=100ns.Data bit is stored after time-delay t3=20ns.Maximum clock frequency f1=50KHz.Minimum effective bit is counted LSB and is recorded at first, and the test data in data register can be read by DATAOUT.
Another kind of logical sequence oscillogram under the second mode of operation as shown in figure 10, the second mode of operation of utilizing CLK2 is pseudo-programming mode, after read cycle finishes, digital signal is write CLK2, at this moment, CLK2 is as data input pin.After n pulse of parallel section, when the CLK1 rising edge arrived, the digital signal that writes CLK2 was effective.Time-delay and leading time, t2=100ns, t3=20ns.Maximum reading frequency only is subject to the cmos device that arranges in the data register and the corresponding time restriction of d type flip flop.
Logical sequence oscillogram under the serial read mode as shown in figure 11, the serial data read mode is for detection of the test data of programming data or the detection data writing register of expection, namely trim in the process, the simulation that to simulate puncture in described data register 1034 is punctured the result reads, satisfy first when pre-conditioned when described simulation punctures the result, also need the puncture result who in described zener diode array, to puncture to read.Data sequence starts from a read cycle.CLK1 when in the end a CLK2 clock edge read output signal triggers, exports first DATAOUT data as reading clock.After the output of data register serial data is complete, all information all will be lost.Maximum reading frequency is f1=200MHz.When the read mode end, after last rising edge of CLK2, first bit outputs to DATAOUT.Therefore, only there be n-1 CLK1 clock cycle to read n bit.
The above only is preferred implementation of the present utility model; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (7)
- A simulation/digital-to-analogue mixed signal process chip trim device, it is characterized in that described device is arranged in the described chip, comprising:After the parameter error that measures described chip, detect the detection module of each Zener diode state in the zener diode array;Link to each other with described detection module, first trim signal and generate the first control signal according to what generate when all not puncturing when the parameter error of described chip and described Zener diode state, or according to when the parameter error of described chip and described Zener diode state when partly puncturing generation second trim the controller that signal generates the second control signal;Link to each other with described detection module with described controller respectively, select signal to be defined as the first mode of operation according to the first mode of operation that receives, puncture respectively according to the Zener diode in described the first control signal zener diode array and to trim, perhaps, select signal to be defined as the second mode of operation according to the second mode of operation that receives, according to described the second control signal described Zener diode is simulated puncture, when puncturing the result, described simulation satisfies first when pre-conditioned, select signal to be defined as the first mode of operation according to the first mode of operation that receives, and puncture respectively the zener diode array module that trims according to the Zener diode in described the second control signal zener diode array.
- 2. the device that trims according to claim 1 is characterized in that, also comprises:Link to each other with described zener diode array module with described detection module respectively, simulation puncture result under the second mode of operation reads to described zener diode array module, and when puncturing the result, described simulation satisfies first when pre-conditioned, the read module that the puncture result of described zener diode array module under the first mode of operation read;Link to each other with described read module, the described simulation of reading respectively when described read module punctures result and described puncture result satisfied second when pre-conditioned, judge the described end that trims, otherwise, judge that described do not trim finish, and will describedly trim that unclosed result of determination transfers to described detection module so that the judge module of each Zener diode state in the described detection module detection zener diode array.
- 3. the device that trims according to claim 2 is characterized in that, described zener diode array module comprises:Receiving the first mode of operation selects signal or the second mode of operation to select the first receiving port of signal;Link to each other with described the first receiving port, select signal to determine that described zener diode array module is the first mode of operation according to the first mode of operation that described the first receiving port receives, or select signal to determine the mode of operation selector that described zener diode array module is the second mode of operation according to the second mode of operation that described the first receiving port receives;When the mode of operation of described zener diode array module is the first mode of operation, receive the first control signal that controller sends; When the mode of operation of described zener diode array module is the second mode of operation, receive the second control signal that controller sends, satisfy first pre-conditioned when described simulation punctures the result, when the mode of operation of described zener diode array module is the first mode of operation, receive the second receiving port of the second control signal of controller transmission;Link to each other with described the second receiving port with described mode of operation selector respectively, when described Zener diode state punctures for part, described Zener diode is simulated the data register of puncture according to described the second control signal;Link to each other with described the second receiving port with described mode of operation selector respectively, when described Zener diode state when all not puncturing, puncture respectively according to described the first control signal zener diode and to trim; When described Zener diode state is part when puncturing, when puncturing the result, the described simulation in the data register satisfies first when pre-conditioned, puncture respectively the zener diode array that trims according to described the second control signal zener diode.
- 4. the device that trims according to claim 3 is characterized in that, described zener diode array module also comprises:Link to each other with described zener diode array with described data register respectively, described data register and described zener diode array obtain when trimming respectively trims the serial output terminal mouth that consequential signal carries out serial output.
- 5. the device that trims according to claim 1 is characterized in that, also comprises:Link to each other the parallel output port that described detection module is exported the testing result of each Zener diode state of described zener diode array with described detection module.
- 6. the device that trims according to claim 1 is characterized in that, also comprises:The power supply that links to each other with described zener diode array module with described controller respectively;The device earth terminal that links to each other with described zener diode array module with described controller respectively.
- 7. the device that trims according to claim 6 is characterized in that, also comprises:Respectively with first electrostatic discharge protective circuit that power end links to each other that connects that connects power end and described zener diode array module of described power supply, described controller;The second electrostatic discharge protective circuit that links to each other with the earth terminal of the earth terminal of described device earth terminal, described controller and described zener diode array module respectively.
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| CN 201220393409 CN202758882U (en) | 2012-08-09 | 2012-08-09 | Trimming device of analog/digital analogy mixed signal processing chip |
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| CN 201220393409 CN202758882U (en) | 2012-08-09 | 2012-08-09 | Trimming device of analog/digital analogy mixed signal processing chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104656006A (en) * | 2015-01-20 | 2015-05-27 | 辉芒微电子（深圳）有限公司 | Chip parameter trimming circuit, trimming method and chip comprising trimming circuit |
| CN108023585A (en) * | 2016-10-28 | 2018-05-11 | 福州瑞芯微电子股份有限公司 | Digital Analog Hybrid Circuits, SoC chip and analog circuit method for repairing and regulating |
| CN110504180A (en) * | 2019-07-31 | 2019-11-26 | 广东利扬芯片测试股份有限公司 | A kind of test of infrared receiver chip trims system |
| CN112213967A (en) * | 2019-07-11 | 2021-01-12 | 深圳市航顺芯片技术研发有限公司 | Automatic detection system for pins received and sent by serial port of microcontroller |
-
2012
- 2012-08-09 CN CN 201220393409 patent/CN202758882U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104656006A (en) * | 2015-01-20 | 2015-05-27 | 辉芒微电子（深圳）有限公司 | Chip parameter trimming circuit, trimming method and chip comprising trimming circuit |
| CN108023585A (en) * | 2016-10-28 | 2018-05-11 | 福州瑞芯微电子股份有限公司 | Digital Analog Hybrid Circuits, SoC chip and analog circuit method for repairing and regulating |
| CN108023585B (en) * | 2016-10-28 | 2021-12-24 | 福州瑞芯微电子股份有限公司 | Digital-analog hybrid circuit, SoC chip and analog circuit trimming method |
| CN112213967A (en) * | 2019-07-11 | 2021-01-12 | 深圳市航顺芯片技术研发有限公司 | Automatic detection system for pins received and sent by serial port of microcontroller |
| CN112213967B (en) * | 2019-07-11 | 2021-07-02 | 深圳市航顺芯片技术研发有限公司 | Automatic detection system for pins received and sent by serial port of microcontroller |
| CN110504180A (en) * | 2019-07-31 | 2019-11-26 | 广东利扬芯片测试股份有限公司 | A kind of test of infrared receiver chip trims system |
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