CN201741720U

CN201741720U - High-power LED chip encapsulating structure

Info

Publication number: CN201741720U
Application number: CN2010202024366U
Authority: CN
Inventors: 马春军
Original assignee: Individual
Current assignee: Individual
Priority date: 2010-05-25
Filing date: 2010-05-25
Publication date: 2011-02-09
Anticipated expiration: 2020-05-25

Abstract

The utility model relates to a high-power LED chip encapsulating structure, which comprises a substrate, an LED chip welded on the substrate and conductive base material, wherein a piece of transparent electro-conductive glass is respectively connected with the LED chip and the conductive base material. The encapsulating structure breaks through the traditional LED chip encapsulating structure and is a brand-new LED chip encapsulating structure, the chip self is lighter, the cost is lower, and the stability is better.

Description

A kind of high-power LED chip encapsulating structure

Technical field

The utility model relates to a kind of led chip encapsulation technology, refers to a kind of high-power LED chip encapsulating structure especially.

Background technology

Under the background that the worry of current global energy shortage promotes once again, energy savings is the major issue that we shall face future, LED must be a developing tendency in future as a kind of novel green light source product, and it is the novel illumination light source epoch of representative that 21st century will enter with LED.LED is the incandescent lamp that continues, fluorescent lamp, the illumination of the 4th generation behind the high-voltage lamp, have energy-conservation, environmental protection, characteristics such as the life-span is long, and volume is little can be widely used in various indications, show decoration, backlight, fields such as general lighting and urban landscape.

Traditional led chip encapsulating structure is divided into: (1) transversary (2) vertical stratification (3) inverted structure (4) through-hole vertical structure.Wherein the led chip of first kind of horizontal encapsulating structure and second kind of vertical encapsulating structure is connected to the master with being connected mainly of base material to beat gold thread, and transversary is a bipolar electrode, and vertical stratification is a single electrode.The shortcoming of beating the connected mode of gold thread is; Rosin joint appears in the gold thread ease of connection, and device is not very stable under the situation that changes temperature, and gold thread also causes a part of shading phenomenon.For the third inverted structure, though be not routing, too for a short time being not easy of solder joint area dispelled the heat.For the 4th kind of through-hole vertical structure, it is optimal to be that first three is planted in chip-packaging structure, need not routing, and it is good to dispel the heat, but the complex process of chip, the price height, volume production has certain degree of difficulty.

Summary of the invention

The purpose of this utility model provides a kind of high-power LED chip encapsulating structure, and this encapsulating structure is broken through traditional led chip encapsulating structure, is a kind of brand-new led chip encapsulating structure, makes chip itself more frivolous, and cost is lower, and stability is better.

The technical solution of the utility model is as follows:

A kind of high-power LED chip encapsulating structure comprises substrate, is welded on led chip and conductive base on the described substrate, and a transparent conducting glass connects described led chip and described conductive base respectively.

Further, described conductive base is a copper.

Further, be coated with or be printed with electrically conducting transparent printing ink on the described transparent conducting glass.

Further, described led chip is identical with the height of described conductive base on described substrate.

Because replace gold thread as conducting medium by transparent conducting glass, the area of transparent conducting glass is bigger, and coating or be printed with electrically conductive ink on transparent conducting glass, thereby make this patent encapsulating structure, have the following advantages:

1, increase electric current, improve power;

2, increase bright dipping, improve luminous flux;

3, because do not re-use gold thread, use ultra-thin clear glass, therefore can make chip itself to lightening development;

4, be fit to modularization production;

5, wireless package increases device stability;

6, therefore the price of ultra-thin clear glass and electrically conductive ink can reduce cost far below the price of gold thread, simplifies technology;

7, making the vertical stratification chip need not pad, only does ohmic contact.

Description of drawings:

Structural representation when Fig. 1 does not paste led chip and conductive base LED as yet for electro-conductive glass of the present utility model;

Structural representation when Fig. 2 has pasted led chip and conductive base LED for electro-conductive glass of the present utility model;

Label declaration:

1-led chip, 2-base material, 3-substrate, 4-transparent conducting glass

Embodiment

Further specify the encapsulating structure of this patent by embodiment below in conjunction with accompanying drawing:

A kind of high-power LED chip encapsulating structure, the led chip 1 and conductive base 2, one transparent conducting glass 4 that comprise substrate 3, are welded on the substrate 3 connect led chip 1 and conductive base 2 respectively.Conductive base 2 is a copper, also can be other conducting metals, but relatively commonly used be copper, coating or be printed with electrically conducting transparent printing ink on the transparent conducting glass 4, electrically conducting transparent printing ink can adopt the electrically conducting transparent printing ink of universal models on the market.

The concrete steps of this patent product when concrete encapsulation are as follows:

(1) at first on substrate 3 welding led chip 1 positive electrode;

(2) welding conductive base Cu makes negative electrode on the same plane of substrate, and led chip 1 and the height of conductive base Cu on substrate 3 are identical;

(3) get the ultra-thin clear glass that prints or be coated with electrically conducting transparent printing ink of a corresponding size, transparent conducting glass 4 is pasted the negative electrode and the conductive base Cu of led chip respectively, and drying then promptly becomes the high-power LED chip of this patent encapsulating structure.

Those skilled in the art will recognize that, above-mentioned embodiment is exemplary, be in order to make everybody can better understand this patent content, should not be construed as is restriction to this patent, be equal to change so long as disclose any that spirit done, all fall into this patent scope according to this patent.

Claims

1. a high-power LED chip encapsulating structure comprises substrate, is welded on led chip and conductive base on the described substrate, and it is characterized in that: a transparent conducting glass connects described led chip and described conductive base respectively.

2. high-power LED chip encapsulating structure according to claim 1 is characterized in that: described conductive base is a copper.

3. high-power LED chip encapsulating structure according to claim 1 is characterized in that: be coated with or be printed with electrically conducting transparent printing ink on the described transparent conducting glass.

4. high-power LED chip encapsulating structure according to claim 1 is characterized in that: described led chip is identical with the height of described conductive base on described substrate.