CN201274297Y - Large power LED encapsulation structure capable of enhancing brightness - Google Patents
Large power LED encapsulation structure capable of enhancing brightness Download PDFInfo
- Publication number
- CN201274297Y CN201274297Y CNU2008201599462U CN200820159946U CN201274297Y CN 201274297 Y CN201274297 Y CN 201274297Y CN U2008201599462 U CNU2008201599462 U CN U2008201599462U CN 200820159946 U CN200820159946 U CN 200820159946U CN 201274297 Y CN201274297 Y CN 201274297Y
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- lens
- luminescence chip
- encapsulation structure
- power led
- led luminescence
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Abstract
The utility model relates to a high-power LED packaging structure capable of improving luminance, which comprises an LED luminescence chip arranged in a concave cavity of a bracket. Fluorescence glue is coated on the luminescence part of the LED luminescence chip; a lens is pressed and covered over the fluorescence glue of the LED luminescence chip; silica gel which connects the lens and the bracket to a whole body is arranged in the sunken part of the bracket, i.e. the silica gel connects the sensitive surface of the lens and the luminescence part of the LED luminescence chip, and the lens is made of crystal material with high transparent property. The utility model has the advantages of firm installation, high luminescence efficiency, impact resistance, vibration resistance, stable performance and the like.
Description
Technical field
The utility model relates to a kind of high-power LED encapsulation structure, especially a kind of high-power LED encapsulation structure that improves brightness.
Background technology
Great power LED is the luminescent device that a class can directly be converted into electric energy visible light and radiant energy, it is low to have operating voltage, power consumption is little, luminous efficiency height, emission response time are extremely short, and be photochromic pure, sound construction, shock resistance, vibration resistance, stable and reliable for performance, in light weight, series of characteristics such as volume is little, and cost is low are in the link of LED industry, the upstream is LED substrate wafer and substrate production, the industry in middle reaches turns to the led chip design and makes and produce, and the LED packaging and testing are returned in the downstream, research and development low thermal resistance, the highly reliable lens of the high printing opacity of excellent optical characteristics.With encapsulation technology practical, as the to move towards market industrialization the only way which must be passed that is that New LED moves towards.
About 50% the luminous energy that traditional LED device package lens can only utilize that chip sends, because semiconductor differs bigger with the refractive index of sealing epoxy, cause the inner cirtical angle of total reflection very little, the light that active layer produces has only fraction to be removed, most of absorbed by lens body during through repeatedly reflection and bright dipping, become the ultra-high brightness LED chip and get the very low basic reason of optical efficiency at chip internal.How the luminous energy with different materials refraction, reflection used up 50% between inside and lens is used, be in the process of bright dipping with the design key of the system of printing opacity lens.But the absorption luminous energy of central lens partly is the problem that need solve.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, provides a kind of and installs firmly, luminous efficiency is high, the high-power LED encapsulation structure of shock resistance, vibration resistance, improved brightness stable and reliable for performance.
The technical scheme that provides according to the utility model, the described high-power LED encapsulation structure that improves brightness, be included in the LED luminescence chip that is provided with in the cavity of support, on the illuminating part of LED luminescence chip, be coated with fluorescent glue or silica gel is coated on the lens sensitive surface, the fluorescent glue top gland of LED luminescence chip has lens, in the depression of support, be provided with the silica gel that lens and support are connected as a single entity, be that described silica gel links into an integrated entity the sensitive surface of lens and the illuminating part of LED luminescence chip, and described lens are made by the artificial synthetic high light transmittance crystal material that contains greater than 98% (SiO2).
Described lens are that hemisphere, height are parabolical profile less than little hemisphere, the height of radius greater than the super hemisphere or the cross section of radius.The support wall body in the cavity outside is provided with step body, and the bottom edge of described lens promptly is erected on the step body.Described lens are made by the high light transmittance crystal material with piezoelectric property.
The utlity model has install firmly, luminous efficiency is high, shock resistance, vibration resistance and advantage such as stable and reliable for performance.
Description of drawings
Fig. 1 is an overall structure schematic diagram of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with concrete drawings and Examples.
As shown in the figure: the high-power LED encapsulation structure that improves brightness of the present utility model mainly is made up of lens 1, support 2, fluorescent glue 3, LED luminescence chip 4, silica gel 5 and step body 6 etc.
The utility model is included in the LED luminescence chip 4 that is provided with in the cavity of support 2, on the illuminating part of LED luminescence chip 4, be coated with fluorescent glue 3, the fluorescent glue 3 top glands of LED luminescence chip 4 have lens 1, in the depression of support 2, be provided with the silica gel 5 that lens 1 and support 2 are connected as a single entity, be that described silica gel 5 links into an integrated entity the sensitive surface of lens 1 and the illuminating part of LED luminescence chip 4, and described lens are made by the artificial synthetic high light transmittance crystal material that contains greater than 98% (SiO2).
Described lens 1 are parabolical profile less than little hemisphere, the height of radius greater than the super hemisphere or the cross section of radius for hemisphere, height.Support 2 wall bodies in the cavity outside are provided with step body 6, and the bottom edge of described lens 1 promptly is erected on the step body 6.Described lens 1 are contained greater than the synthetic material of 98% (SiO2) by the high light transmittance crystal with piezoelectric property to be made.
If the lighting angle of great power LED is set 90 °.Earlier lens are processed into the profile of a plano-convex by optical axis direction, the high 3mm of maximum outside diameter 6mm of lens forms a hemisphere profile that list is protruding.In that LED luminescence chip 4 is fixed on the ceramic substrate, stamp gold thread, fixed support.Fluorescent material is coated on surface at wafer, after with silica gel 5 inject in the supports then with lens 1 by step body 6 (lens frame) the internal fixation lens 1 of putting support 2 into.Change and lens 1 can be made super hemisphere as set angle, or little hemisphere, can be processed into different hemisphere profiles according to different requirements and reach result of use.
If the lighting angle of great power LED is set 120 °.Earlier lens 1 are processed into the profile of a plano-convex by optical axis direction, are provided with upwards installation depression at lens 1 bottom face, the degree of depth that depression is installed is 0.7mm, and the maximum outside diameter 5mm of lens 1, high 2.1mm form a smaller part ball profile that list is protruding.In that LED luminescence chip 4 is fixed on the ceramic substrate, stamp gold thread, be fixed on the support 2.Coat fluorescent glue 3 on the surface of LED luminescence chip 4, after silica gel 5 is injected in the supports 2, support 2 wall bodies are provided with step body 6 and are used for fastening lens 1 and lens 1 are installed firm.
Because the material selection of lens 1 is the flawless quartzy monocrystalline of monocrystalline crystal body, (SiO2) 98% or lithium niobate (LiNbO
3) crystal and lithium tantalate (LiTaO
3) crystal, hardness 7 proportions, because of the monocrystalline crystal body has up to the high light transmittance more than 96%, the very effective luminous flux that improved.Make the lens 1 that use in the utility model have fine performances such as light transmission is good, resistance to wear is good, not aging, high temperature resistant.
Claims (5)
1, a kind of high-power LED encapsulation structure that improves brightness, be included in the LED luminescence chip (4) that is provided with in the cavity of support (2), on the illuminating part of LED luminescence chip (4), be coated with fluorescent glue (3), fluorescent glue (3) the top gland of LED luminescence chip (4) has lens (1), it is characterized in that: in the depression of support (2), be provided with the silica gel (5) that lens (1) and support (2) are connected as a single entity, be that described silica gel (5) links into an integrated entity the sensitive surface of lens (1) and the illuminating part of LED luminescence chip (4), and described lens (1) are made by the high light transmittance crystal material.
2, the high-power LED encapsulation structure that improves brightness as claimed in claim 1 is characterized in that: described lens (1) are hemisphere, height less than the little hemisphere of radius, the height super hemisphere greater than radius.
3, the high-power LED encapsulation structure that improves brightness as claimed in claim 1 is characterized in that: described lens (1) cross section is parabolical profile.
4, the high-power LED encapsulation structure that improves brightness as claimed in claim 1 is characterized in that: support (2) wall body in the cavity outside is provided with step body (6), and the bottom edge of described lens (1) promptly is erected on the step body (6).
5, the high-power LED encapsulation structure that improves brightness as claimed in claim 1 is characterized in that: described lens (1) are made by the high light transmittance crystal material with piezoelectric property.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201599462U CN201274297Y (en) | 2008-09-23 | 2008-09-23 | Large power LED encapsulation structure capable of enhancing brightness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201599462U CN201274297Y (en) | 2008-09-23 | 2008-09-23 | Large power LED encapsulation structure capable of enhancing brightness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201274297Y true CN201274297Y (en) | 2009-07-15 |
Family
ID=40884638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201599462U Expired - Fee Related CN201274297Y (en) | 2008-09-23 | 2008-09-23 | Large power LED encapsulation structure capable of enhancing brightness |
Country Status (1)
| Country | Link |
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| CN (1) | CN201274297Y (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8747552B2 (en) | 2005-12-02 | 2014-06-10 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| US9028612B2 (en) | 2010-06-30 | 2015-05-12 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| US9299880B2 (en) | 2013-03-15 | 2016-03-29 | Crystal Is, Inc. | Pseudomorphic electronic and optoelectronic devices having planar contacts |
| US9447521B2 (en) | 2001-12-24 | 2016-09-20 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US9624601B2 (en) | 2007-01-17 | 2017-04-18 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| CN104037316B (en) * | 2014-06-19 | 2017-06-20 | 鸿利智汇集团股份有限公司 | A kind of LED inorganic encapsulateds support and its method for packing |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US10446391B2 (en) | 2007-01-26 | 2019-10-15 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
-
2008
- 2008-09-23 CN CNU2008201599462U patent/CN201274297Y/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9447521B2 (en) | 2001-12-24 | 2016-09-20 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US8747552B2 (en) | 2005-12-02 | 2014-06-10 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US9525032B2 (en) | 2005-12-02 | 2016-12-20 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| US9447519B2 (en) | 2006-03-30 | 2016-09-20 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them |
| US9624601B2 (en) | 2007-01-17 | 2017-04-18 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9670591B2 (en) | 2007-01-17 | 2017-06-06 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US10446391B2 (en) | 2007-01-26 | 2019-10-15 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US9028612B2 (en) | 2010-06-30 | 2015-05-12 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| US9580833B2 (en) | 2010-06-30 | 2017-02-28 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| US10074784B2 (en) | 2011-07-19 | 2018-09-11 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| US9299880B2 (en) | 2013-03-15 | 2016-03-29 | Crystal Is, Inc. | Pseudomorphic electronic and optoelectronic devices having planar contacts |
| CN104037316B (en) * | 2014-06-19 | 2017-06-20 | 鸿利智汇集团股份有限公司 | A kind of LED inorganic encapsulateds support and its method for packing |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Wuxi Guangtai glassware Co. Ltd. Assignor: Wang Haijun Contract record no.: 2010320000587 Denomination of utility model: Large power LED encapsulation structure capable of enhancing brightness Granted publication date: 20090715 License type: Exclusive License Record date: 20100511 |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090715 Termination date: 20120923 |