CN1868033A - Multilayer mirror, method for manufacturing the same, and exposure equipment - Google Patents

Multilayer mirror, method for manufacturing the same, and exposure equipment Download PDF

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CN1868033A
CN1868033A CN 200480030249 CN200480030249A CN1868033A CN 1868033 A CN1868033 A CN 1868033A CN 200480030249 CN200480030249 CN 200480030249 CN 200480030249 A CN200480030249 A CN 200480030249A CN 1868033 A CN1868033 A CN 1868033A
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rete
layer
film
multilayer film
piece
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CN100449690C (en
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神高典明
村上胜彦
小宫毅治
白石雅之
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Nikon Corp
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Abstract

A multilayer film reflection mirror intended to reduce the dependency of reflectance on an incident angle. A substrate (1) is made of a low-thermal-expansion glass polished until its surface (top surface in the FIG.) has a roughness of up to 0.2 nmRMS. An Ru/Si multilayer film (3) having the large half width of peak reflectance is formed on the surface of the substrate (1), and an Mo/Si multilayer film (5) having a high peak reflectance is formed on this Ru/Si multilayer film (3). Accordingly, a reflectance peak having a higher reflectance than the case with of Ru/Si only and a larger half width than the case with of Mo/Si multilayer film (5) only is obtained. Since Ru provides a larger EUV beam absorption than Mo, a higher reflectance than with the case of a structure in which the Ru/Si multilayer film (3) is formed on the Mo/Si multilayer film (5) is obtained. Since a multilayer film having a larger half width at a spectral reflectance has a smaller dependency of reflectance on an angle, the invention can keep a high imaging performance in a projection optical system.

Description

The manufacture method of multi-layer mirror, multi-layer mirror and exposure system
Technical field
The present invention relates to the multi-layer mirror that in the EUV photoetching technique, uses etc., more specifically, relate to the reflectivity that reduces on the mirror surface technology the dependence of incidence angle.
Background technology
At present, as the method for making semiconductor integrated circuit, the projection exposure that dwindles that can obtain high processing rate has obtained using widely.In the shadow casting technique that this dwindles, along with conductor integrated circuit device becomes more meticulous, people have developed and have used the grenz ray with about 11～14nm wavelength to replace ultraviolet projection lithography technology (referring to non-patent literature 1).Recently, this technology also is known as EUV (far ultraviolet, grenz ray) photoetching technique.People expect that this EUV photoetching technique is the technology with 45nm or following resolution, and this is impossible realize (wavelength be about 190nm or more than) with traditional photoetching technique.
Meanwhile, in the present use visible light or the optical system of ultraviolet main flow reduced projection, can use lens as the transmissive optical element.Require the optical system of high-resolution reduced projection to constitute by some lens.In contrast to this, in the wave-length coverage of EUV ray (grenz ray), do not have transparent material, and the refractive index of material is in close proximity to 1, therefore, can not uses the traditional optical element that utilizes refraction.Replace, thereby people use and to utilize plunderring of total reflection to penetrate mirror, come overlapping some reflection rays can obtain the multi-layer mirror etc. of high reflectance generally by adjusting weak at the interface catoptrical phase place.
In the projection optical system of using lens, can realize the optical system that light advances in one direction along optical axis, yet in the projection optical system that has disposed speculum, light beam is returned repeatedly.Therefore, be necessary to stop light beam and the mirror substrate generation space interference returned, and will limit the numerical aperture (NA) in the optical system.
At present, recommended by four to six projection optical systems that speculum constitutes.In order to obtain enough resolution, the numerical aperture of projection optical system is preferably big, and therefore, the optical system that is made of six speculums that can obtain large-numerical aperture is considered to desirable.As the example of six mirror-optical systems, people such as Takahashi have recommended a kind of structure (referring to Figure 21 of patent documentation 1 and back).
For the optical system that makes reduced projection shows enough performances in the projection exposure that dwindles, the structure of lamp optical system also is very important.In order to make projection optical system show enough resolution, be necessary to make the rayed intensity in the pupil even, and to have formed the exposure area of circuit pattern to be transmitted on the uniform intensity irradiation mask.In addition, in order to guarantee throughput, it is also very important to shine strong as far as possible light.As the example of such lamp optical system, it for example is being disclosed in the patent documentation 2.
In the multi-layer mirror that constitutes the EUV optical system, the material that is suitable for obtaining high reflectance is difference along with the difference of the wave-length coverage of incident light.For example, in wave-length coverage,, just can obtain 67.5% reflectivity for vertical incidence if use molybdenum (Mo) layer and silicon (Si) layer molybdenum Mo/Si multilayer film that stacks gradually near 13.5nm.In addition, in wave-length coverage,, just can obtain 70.2% reflectivity (referring to non-patent literature 2) for vertical incidence if use molybdenum (Mo) layer and beryllium (Be) layer Mo/Be multilayer film that stacks gradually near 11.3nm.According in the non-patent literature 2, under the situation of Mo/Si multilayer film, the half width of the reflectance peak of multilayer film (FWHM) is about 0.56nm, and its Cycle Length has been adjusted, so that have peak value for vertical incidence at the wavelength place of 13.5nm.
Meanwhile, the reflectivity of well-known multi-layer mirror is along with angle of light and wavelength different have significant change.Figure 19 example the reflectivity of traditional multi-layer mirror and the relation between the incidence angle.Among this figure, transverse axis represents to be projected onto the incidence angle (degree (°) of the light of multi-layer mirror), and the longitudinal axis is represented the reflectivity (%) of wavelength (λ) for the EUV ray of 13.5nm.As shown in the figure, in traditional multi-layer mirror, when incidence angle is about 0 ° to 5 °, will obtain 70% or higher high reflectance, yet when being more than 10 ° the time, reflectivity descends significantly.
Figure 20 example the spectral reflectance performance of traditional multi-layer mirror.Among this figure, transverse axis is represented incident light wavelength (λ), and the longitudinal axis is represented reflectivity (%).Notice that its incidence angle is assumed to 0 ° (being vertically projected to reflecting surface).As can be seen, in traditional multi-layer mirror, (central part of figure) obtained 70% or above high reflectance near the wavelength 13.5nm, yet in other wave-length coverage, reflectivity significantly descends.
For such problem, people such as Kuhlmann proposed a kind of by making the reflectivity multilayer film periodic structure (every layer thickness) thus inhomogeneous have roughly a reflectivity multilayer film (referring to non-patent literature 3) of reflectivity uniformly in the wave-length coverage of broad.Non-patent literature 3 discloses a kind of multi-layer film structure that has wide region for reflectivity angular distribution or spectral reflectivity, and it is to be purchased the multilayer film optimizer by use to adjust every layer thickness of 50 layers multilayer film and obtain.
For example, under the constant situation of the length of periodicity of multilayer film, if optimize this length of periodicity so that reflectivity maximum during vertical incidence, the scope that can keep high reflectance is when incidence angle is 0 ° to 5 °, when incidence angle is 10 ° or when above, reflectivity significantly descends.In contrast to this, non-patent literature 3 discloses a kind of multilayer film with nonuniform film thick structure, and in 0 ° to 20 ° scope, its reflectivity is almost constant at about 45% in incidence angle.Although the half width (FWHM) of the spectral reflectivity peak value of normal Mo/Si multilayer film is about 0.56nm, non-patent literature 3 also discloses a kind of structure, for vertical incidence, wave-length coverage when 13nm to 15nm its reflectivity almost stable 30%.
Unanimity in the above-mentioned wide wave-length coverage in the consistent and wide ranges of incidence angles of reflectivity is not the performance that can control separately, can in wide wave-length coverage, obtain in the multilayer film of uniform reflectivity, has such trend, that is, even also diminished in the change of wide ranges of incidence angles internal reflection rate.The multilayer film that can obtain uniform reflectivity in so wide wave-length coverage can utilize the EUV ray in the wide wavelength region may, although its reflection peak is lower than general multilayer film, therefore, when the wave-length coverage of incident light is wide, can expect to obtain to depend on a large amount of illumination of its application.
In addition, people such as Singh have reported by the Γ value that makes the Mo/Si multilayer film (ratio of the length of periodicity of multilayer film and Mo layer thickness) inhomogeneous on depth direction, thereby increase reflectivity (referring to non-patent literature 4).The EUV reflectivity of Mo/Si multilayer film reaches maximum when the Γ value is 0.35 to 0.4, yet, non-patent literature 4 discloses when the Γ value of the Mo/Si that base side (deep layer side) part of multilayer film is located approaches 0.5, and reflectivity is obtained than can obtain bigger increase when being set at steady state value 0.4 for whole multilayer film.
Meanwhile, as the reflectivity multi-layer film structure that can obtain high reflectance to EUV ray, except Mo/Si, also has Ru/Si (Ru represents ruthenium) near the 13nm wavelength.If supposition n is a refractive index, k is extinction coefficient (imaginary part of complex refractivity index), and (n k) is the optical constant of the silicon of 13.5nm wavelength
N (Si)=0.9993 and
k(Si)＝0.0018。
And the optical constant of molybdenum and ruthenium (n k) is respectively
n(Mo)＝0.9211，
k(Mo)＝0.0064，
N (Ru)=0.8872 and
k(Ru)＝0.0175。
The same with the multilayer film that is used for the EUV ray, when multilayer film self absorbed light, in order to obtain high reflectivity, it was big and absorb little preferably to constitute the residual quantity of refractive index of material of multilayer film.From above-mentioned optical constant as seen, on the angle of refractive index, the Ru/Si multilayer film is suitable, and the angle from absorbing, the Mo/Si multilayer film is more suitable for obtaining high reflectance.Under the situation of these two kinds of multilayer films, the influence of absorption is dominated, and the Mo/Si multilayer film has higher peak reflectivity.
The half width of the reflectivity peak of multilayer film is caused by the refractive index residual quantity.The band overall with of the reflectivity peak of the known dielectric multilayer film of knowing infrared ray, visible light and ultraviolet field crowd (a kind of two kinds of multilayer films that material stacks gradually) be expressed from the next (for example, referring to non-patent literature 5) with different refractivity.
[mathematical formulae 1]
2 Δg = 4 π · sin - 1 ( n H - n L n H + n L ) · · · ( 1 )
Here, n HBe the refractive index of high index of refraction material, and n LIt is the refractive index of low-refraction material.
From following formula as seen, the refringence that constitutes between two kinds of materials of multilayer film is big more, and bands of a spectrum (band) increase many more, therefore, from the Ru/Si multilayer film than obtaining wideer half width from the Mo/Si multilayer film.Under the non-absorbent situation of rete, the peak value of dielectric multilayer film reflectivity reaches 100% gradually, yet, do not reach 100% in the EUV zone owing to absorb it.
Because uptake depends on wavelength, if mark and draw the change of reflectivity with respect to wavelength, the reflectivity before and after the peak wavelength is asymmetric.X-ray reflectivity peak value in the EUV zone is along with the logarithm of the rete that forms increases and increases, yet the place is saturated at certain layer logarithm.Layer logarithm when reaching capacity is about 50 pairs of retes for the Mo/Si multilayer film, and is about 30 pairs of retes for Ru/Si.The reason that reflectivity reaches capacity is, when the reflection of EUV ray each border surface during by rete with absorb and make almost do not have light to arrive darker position, and no longer the reflection of whole rete had contribution.The uptake of Ru/Si multilayer film is greater than the Mo/Si multilayer film, and its reflectivity at single interface is also higher, and therefore, the rete logarithm that reaches capacity is less.
Patent documentation 1: Japanese unexamined patent is published publication number 2003-15040
Patent documentation 2: Japanese unexamined patent is published publication number 11-312638
Non-patent literature 1:Daniel A.Tichenor and other 21 people, " the development recent developments of integrated EUVL experimental tool (Recent results in the development of an integratedEUVL laboratory tool) ", SPIE collection of thesis (Proceedings of SPIE), the U.S. (USA), [SPIE, the international association of optical engineering (The International Society forOptical Engineering)], May nineteen ninety-five, the 2437th volume, the 293rd page
Non-patent literature 2:Claude Montcalm and other 5 people, " the multilayer film reflectance coating (Multilayer reflective coatings forextreme-ultraviolet lithography) that is used for extreme UV lithography ", the SPIE collection of thesis, the U.S., (SPIE, the international association of optical engineering), in June, 1989, the 3331st volume, the 42nd page
Non-patent literature 3:Thomas Kuhlmann and other 3 people, " EUV multi-layer mirror (EUV multilayer mirrors with tailoredspectral reflectivity) " with specific spectral reflectivity, the SPIE collection of thesis, the U.S., (SPIE, the international association of optical engineering), 2003, the 4782nd volume, the 196th page
Non-patent literature 4:Mandeep Singh and another person, " the improved theoretical reflectivity of far ultraviolet speculum (Improved Theoretical Reflectivities of ExtremeUltraviolet Mirrors) ", the SPIE collection of thesis, the U.S., in July, 2000, the 3997th volume, the 412nd page
Non-patent literature 5:H.A.Macleod writes, Shigetaro Ogura and other 3 people translation, " optical thin film (Optical Thin Film) ", Nikkan Kogyo Shimbun Co., Ltd, in November, 1989
Summary of the invention
The projection optical system that is actually used in the EUV photoetching technique is made of multi-layer mirror, and wherein the Mo/Si multilayer film forms in substrate.
Figure 21 example the projection optical system that constitutes by 6 speculums.This projection optical system is made of these 6 speculums of CM1 to CM6, and is projected on the wafer W by the light of mask M reflection.4 mirror CM1 to CM4 of the upstream side in this optical system (near the side of mask M) constitute the first reflected image shaping optical system G1, in order on mask M, to form the intermediate image of mask composition, and two speculum CM5 in downstream and CM6 (near a side of wafer W) constitute the second reflected image shaping optical system G2, are projected on the wafer W in order to the intermediate image with the mask composition with dwindling.
Reflected by the reflecting surface R1 of the first concave mirror CM1 by the light of mask M reflection, and reflected by the reflecting surface R2 of the second convex mirror CM2.The light that the surperficial R2 that is reflected reflects successively by the reflecting surface R4 of the reflecting surface R3 of the 3rd convex mirror CM3 and the 4th concave mirror CM4 reflection, forms the intermediate image of mask composition subsequently via perforation barrier film AS.Then, from the light of the intermediate image of the mask composition that forms via the first reflected image shaping optical system G1 by the reflecting surface R6 of the reflecting surface R5 of the 5th convex mirror CM5 and the 6th concave mirror CM6 reflection, so on wafer W, form the image that dwindles of mask composition.
The reflectivity that length of periodicity in the base plane of the Mo/Si multilayer film that mirror surface forms distributes directly to be influenced in this plane distributes, and distribution changes as the light quantity in variation of plane intraoral illumination degree or the pupil plane on the imaging surface that forms in the plane of this reflectivity influences the image forming performance, therefore, be necessary they are all taken into account, set up in a kind of plane of optimum and distribute.Yet, owing to be difficult in the rete that formation has free film thickness distribution in the substrate, and therefore, when optical system is set, general optimization around the axial symmetry film thickness distribution of the optical axis of optical system.
Even still there is following problems in the optimization cycle distribution of lengths as mentioned above.In projection optical system shown in Figure 21, the light that arrives lip-deep certain point of image forming is not only to come from a direction that arrives this image forming surface, but comes from the three-dimensional viewpoin space that can be converged to a bit to a certain extent.In other words, on the image forming surface a bit a branch of ray of contributing of the image forming at place in two zones that each has the zone on the mirror substrate of limited area and 2 mirror substrate top not too separating on corresponding to the image forming surface overlaps each other, be reflected.In other words, the reflection at a single point place will contribute to the image forming in the lip-deep zone with certain scope of image forming on the mirror substrate, and will arrive the lip-deep difference of image forming with the light of sampling point place reflection.At this moment, the light that arrives difference on the image forming surface is incided on the point identical on the speculum with different angles, and therefore, the incidence angle at certain some place has certain scope on reflecting surface.
In multi-layer mirror, depend on incidence angle for the optimal period length of fixed wave length, therefore, strictly speaking, do not exist for all incidence angles, to be optimum Cycle Length.If the scope of incidence angle is not big like this, its influence is little.Yet, even for the mirror substrate that constitutes optical system, optimize distribute in the length of periodicity face of common Mo/Si multilayer film (this length of periodicity is constant), for example as shown in figure 21, so that the light wave surface deviation of the light that transmits becomes less, big variation also can take place in light intensity in the pupil plane.Here, under the constraint of above-mentioned rete manufacturing process, when the configuration optical system, in the scope that the axial symmetry around optical axis distributes, optimize the distribution of multilayer film Cycle Length.
Intensity variation in the pupil plane optically is equal to effective NA and becomes littler brokenly, and therefore, the image forming performance significantly descends.This is a problem that occurs in the normal Mo/Si multilayer film, because reflectivity is big to the compliance of incidence angle.Therefore, people require a kind of method of the reflectivity of image forming performance to the compliance of incidence angle that reduce to reduce, and this method can obtain high image forming performance.
In addition, in order in projection optical system, to obtain high image forming performance, be necessary to make that the light intensity in the pupil plane is evenly distributed in irradiation light intensity distributions on the mask and the lamp optical system.This is because the light intensity in the pupil plane distributes and directly is reflected on the intensity distributions of the lip-deep intensity distributions of image forming and pupil plane in the projection optical system in the lamp optical system.
In addition, in the multi-layer mirror in the lamp optical system that proposes recently, it is big to distribute in the face of incidence angle.Therefore, be difficult to points all on the reflecting surface is come strict apolegamy optimal period length.This is because the variable quantity in the face intercycle distribution of lengths needs to increase, and owing to be distributed in rete when forming during Be Controlled or the trickle skew of generation when lamp optical system is calibrated when length of periodicity, thickness corresponding to the incidence angle of supposition is different with the thickness corresponding to the incidence angle of reality, causes reflectivity significantly to reduce.In this case, the problem that the existence light amount that can be used to throw light on reduces and output descends.Therefore the reflectivity on the needs reduction mirror surface is to the technology of the compliance of incidence angle.
An object of the present invention is to provide and a kind ofly reduce reflectivity on multi-layer mirror etc. the technology of the compliance of incidence angle.
First embodiment according to the invention, multi-layer mirror have the reflectivity multilayer film, and wherein high refractive index layer and the low-index film for the EUV ray stacks gradually, and it has following feature.At first, in the multilayer film on light plane of incidence side (superficial film group), low-index film is made of the material that comprises molybdenum (Mo), and high refractive index layer is made of the material that comprises silicon (Si).The second, in the multilayer film (deep layer film layer group) on the light plane of incidence offside of superficial film group, low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon.
Here, high refractive index layer or low-index film can be single rete or the overlapping composite film of a plurality of rete.In addition, between high refractive index layer and low-index film, also may insert another rete.
According to the present invention, comprise that the substrate of molybdenum also comprises as rhodium (Rh), carbon (C), silicon (Si) etc.In other words, the substrate that comprises molybdenum may be the molybdenum that contains impurity Rh, C and Si, perhaps may be the compound (material that this point is equally applicable to comprise the material of ruthenium and comprises silicon) of these materials and molybdenum.In addition, the material that comprises ruthenium also comprises as rhodium (Rh), carbon (C), silicon (Si) etc.In addition, the material that comprises silicon also comprises as carbon (C), four boron monoxide (B 4C), boron (B) etc.
According to the first above-mentioned embodiment, Mo/Si multilayer film with high reflectance peak forms on the Ru/Si multilayer film with big reflectance peak half width, therefore might obtain will be higher than under the situation of Ru/Si only reflectivity, and the reflectance peak that has wideer half width under the situation than Mo/Si multilayer film only.In addition, Ru absorbs more EUV ray than Mo, therefore higher reflectivity in the structure that will obtain to form on the Mo/Si multilayer film than Ru/Si multilayer film.The multilayer film that has about the wide half width of spectral reflectivity has the compliance of less reflectivity to incidence angle, and this makes can keep high image forming performance according to projection optical system of the present invention.
According to first embodiment, the layer logarithm of high refractive index layer in the preferred surface film layer group and low-index film is 2 to 10.The stacked number of Mo/Si multilayer film be 10 or below, therefore, owing to come the influence of the Ru/Si that forms on the comfortable base side, the half width of reflectivity peak keeps broad.In addition, top layer is the Mo/Si multilayer film with reflectivity higher than Ru/Si multilayer film, and therefore, peak reflectivity increases.This makes and can obtain to have singly is the Mo/Si multilayer film or singly is that the Ru/Si multilayer film can not getable high reflectance and the multilayer film of wide half width.
Figure 22 (A) is the curve chart of the incident wavelength performance of the theoretical reflectivity of expression Mo/Si multilayer film and Ru/Si multilayer film.Among this figure, transverse axis is represented the wavelength of incident ray, longitudinal axis representation theory reflectivity (calculated value of reflectivity).Solid line among the figure is represented the theoretical reflectivity of the Mo/Si multilayer film of 100 pairs of retes, and dotted line is represented the theoretical reflectivity of the Ru/Si multilayer film of 100 pairs of retes.From Figure 22 (A) as seen, the half width of Mo/Si multilayer film with enough big formation rete logarithm of 100 pairs of retes is 0.6nm, and the half width of Ru/Si multilayer film is 0.8nm.
The graphical representation of Figure 22 (B) the variation of half width and reflectance peak about the formed film logarithm by on the Ru/Si multilayer film, forming the Mo/Si multilayer film in the multilayer film that the Mo/Si multilayer film forms.Among the figure, transverse axis is illustrated in the layer logarithm of the Mo/Si multilayer film that forms on the Ru/Si multilayer film of 100 pairs of retes.With white triangle (△) expression, reflectance peak is represented with bullet (●) about the half width of the layer logarithm of Mo/Si multilayer film.
From Figure 22 (B) as seen, along with the layer logarithm of Mo/Si multilayer film increases, reflectance peak increases, yet when this layer logarithm becomes 15 when above, peak value is almost saturated.On the other hand, along with the Mo/Si multilayer film the layer logarithm reduce, half width reduces.So when the layer logarithm of Mo/Si multilayer film when becoming 15, half width is reduced to below the 0.7nm, and near the value (referring to Figure 22 (A)) of Mo/Si multilayer film.
As mentioned above, in order to obtain the effect that reflectivity increases and to make the minimum that influences that half width reduces, the shaping rete logarithm of preferred Mo/Si multilayer film is more than two pairs, more preferably 5 to 10 pairs.Multi-layer mirror among first embodiment is by following method manufacturing.In other words, this method only be necessary to have by in substrate alternately deposition comprise the material of ruthenium and comprise that the material of silicon forms the operation of deep layer film layer group, and on the deep layer film layer group alternately deposition comprise the material of molybdenum and comprise that the material of silicon forms the operation of superficial film group.
According to a second embodiment of the present invention, multi-layer mirror has the reflectivity multilayer film, and high refractive index layer and low-index film for the EUV ray in this reflectivity multilayer film are alternately laminated.This multi-layer mirror has following feature.At first, it have the multilayer film group of light plane of incidence side (superficial film group), in the superficial film group the relative extra play on the plane of incidence side, and in the multilayer film group (deep layer film layer group) of the relative plane of incidence side of extra play.The second, owing to have extra play, catoptrical phase change, so reflectance peak integral body reduces in the speculum, simultaneously, compares with the situation that does not have extra play, around the reflectivity increase of peak wavelength.
A third embodiment in accordance with the invention, multi-layer mirror have the reflectivity multilayer film, and high refractive index layer and low-index film for the EUV ray in this reflectivity multilayer film are alternately laminated.This multi-layer mirror has following feature.At first, it have the multilayer film group of light plane of incidence side (superficial film group), in the superficial film group the relative extra play on the plane of incidence side, and in the multilayer film group (deep layer film layer group) of the relative plane of incidence side of extra play.The second, in the superficial film group, low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si).The 3rd, in the deep layer film layer group, low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si).The 4th, the thickness of extra play is about half of Cycle Length of multilayer film, and half that perhaps is about Cycle Length adds the integral multiple of Cycle Length.Notice that low-index film may be made of material that comprises molybdenum (Mo) rather than the above-mentioned material that comprises ruthenium (Ru) in the superficial film group.In addition, the low-index film in the deep layer film also can be made of the material that comprises molybdenum (Mo) rather than ruthenium.
In the multi-layer mirror in the above-mentioned second and the 3rd embodiment, number is 10 to 30 to the unit period structure of preferred surface film layer group (layer to), and the logarithm of deep layer film layer group is 5～50% of a superficial film group logarithm.
In the multi-layer mirror in the second and the 3rd embodiment, extra play is in the position from the tenth to the 30 cycle of top surface of multilayer film, yet the EUV ray is deeper than arrival the position of extra play.Therefore, contribute from the reflection ray of the multilayer film group (deep layer film layer group) on the relative plane of incidence side (base side) of extra play reflectivity to whole multilayer film.
The thickness of extra play make from the extra play and under the phase place of reflection ray of periodicity multilayer film (plane of incidence side and relative plane of incidence side) near reflection peak, change so amplitude fading of reflection ray.Therefore, because the existence of extra play, in the leading section reflectivity decline of reflectivity peak.The shape at the place, reflectivity peak peak in the multilayer film of the rete logarithm when the multilayer film logarithm is saturated less than reflectivity is sharp, yet along with the reflectivity decline of peak portion, jag part will be near smooth (performance of broad can be born by peak portion).
On the other hand, obviously different in the peak valley position situation except peak value.In general periodic structure, when wavelength departure optimal wavelength the wavelength of reflectance peak (obtain), phase change from the reflection ray at the interface of near surface is little, therefore, amplitude increases by overlapped, yet, reduce amplitude thereby also may become opposite phases from the phase place of the reflection ray that leaves surperficial interface.With the corresponding wavelength of the reflectivity peak valley place of Mo/Si or Ru/Si multilayer film, will reduce reflection ray intensity from the effect of the reflection ray at the interface after 10～30 pairs of retes.Yet if add extra play, from the phase shifts half wavelength of the reflection ray on border, darker position, therefore, the amplitude of reflection ray increases.
As mentioned above, by provide extra play between superficial film group and deep layer film layer group, the leading section of reflectivity peak flattens, and at the afterbody at reflectivity (peak), reflectivity increases, and therefore, the half width of reflectivity peak increases.Under the situation of Ru/Si multilayer film or Mo/Si multilayer film, in wavelength is the scope of 12～15nm, will obtain to surpass 60% reflectivity in theory.By these multilayer films are adopted according to multi-layer film structure of the present invention, may obtain the wideer multilayer film of the half width of reflectivity than Ru/Si that does not have extra play and Mo/Si.
Figure 23 has represented the shape of the reflectivity peak when the thickness of extra play (silicon layer in this example) changes with respect to the length of periodicity of Mo/Si multilayer film.Among the figure, transverse axis is represented the wavelength of incident ray, and the longitudinal axis is represented reflectivity.Among the figure, the wavelength performance of the reflectivity of solid line (i) expression when the thickness of extra play is configured to be about the half period property length (=about 3.5nm) of multilayer film, dotted line (ii) represents respectively (iii) that with chain-dotted line the thickness (thickness of extra play=about 2.8nm) of extra play is configured to half period property length (=about 3.5nm) than about multilayer film situation and this thickness (thickness of extra play=about 4.2nm) when thinner and is configured to than thicker situation.
From Figure 23 as seen, dotted line (ii) with chain-dotted line situation (iii) under, the top is not really smooth, but under the situation of solid line (i), the top of reflectivity peak is quite smooth.Clearly, the thickness setting of extra play will effectively be reduced near the peak value reflectance varies to the half period property length that is about multilayer film.
The half period property length of multilayer film is meant half of optical thickness (thickness * refractive index) of one-period in the part of periodic structure in the multilayer film.The thickness of preferred extra play is this half optical thickness, yet there is no need is half above-mentioned optical thickness strictly, only is necessary to be essentially this thickness.Therefore, the difference of preferred additional layer thickness and half optical thickness the wavelength of the EUV ray that adopts 5/100 within, more preferably the wavelength that adopts 3/100 within.
The optical thickness of one-period is about the half-wavelength of incident ray in the multi-layer film structure, therefore, in other words, be necessary optical thickness with extra play be set at employing wavelength about 1/4.Notice that along with EUV ray that transmits and the angle (refraction angle) between the interface normal increase, the optical path length in the unit period structure becomes than thickness long (if the supposition refraction angle is θ, optical path length=thickness/cos θ).Therefore, be necessary to adjust according to the incidence angle of EUV ray in use the thickness of extra play.When the wavelength that adopts be during as 13.5nm, preferably the thickness of extra play and when ranges of incidence angles is 5 ° to 10 °, is preferably in the scope of 3.4 ± 0.68nm in the scope of the half period of multilayer film length ± 0.68nm.
In addition, multi-layer film structure according to the present invention is to be used for infrared ray, visible light and ultraviolet, can think that also itself and calibrator (Etalon) are similar, has wherein added 1/4 space of using wavelength thickness between reflectance coating.Yet, very inequality in structure, application target and following aspects such as characteristic according to multilayer film of the present invention and calibrator.Calibrator is a kind of resonator of Fabry-Perot type, mainly as narrow wave band filter.
Figure 24 is a kind of structural representation of calibrator.Calibrator 300 is a kind of devices that utilize multiple interference, and in its structure, two high reflectivity mirror 301 are configured to and make its middle clipping have certain thickness dividing plate 302.Most of light 303 (seeing the arrow in left side) of injecting calibrator 300 is reflected to the left side of figure, becomes reflection ray 305.On the other hand, two speculums 301 and dividing plate 302 play a part resonator, only allow the light that has the wavelength that satisfies resonance condition in the incident ray 303 pass through, as transmitted ray 304.
Produce sharp-pointed transmission peaks thus.Because 300 of calibrators allow the light with the wavelength that satisfies resonance condition pass through as mentioned above, reflectivity only descends in this wavelength vicinity, and keeps high reflectivity at other wavelength place.Therefore, the spectral reflectivity performance of calibrator 300 has sharp-pointed paddy.Notice that calibrator 300 is used as narrow wave band filter, the reflectivity of two reflecting surfaces should be high and almost equal.
In contrast to this, under the situation of multilayer film of the present invention, on the extra play and the reflectivity of multilayer film under the extra play must be unequal, and the reflectivity of the multilayer film on the base side is necessary low.If equating of the multilayer film on the reflectivity of the multilayer film on the base side and the face side, take place in narrow wavelength region may owing to interfere the reflectivity that causes to descend, and presenting sharp-pointed paddy near the summit place, therefore, no longer is the broadband multilayer film.
As disclosed in the non-patent literature 3, the multilayer film with rete stepped construction of different cycles length may obtain quite high reflectivity in wide wave band.Yet, in this case, be difficult to this structure of assessment.Usually, as the method for assessment multi-layer film structure, being the small angle scattering of X ray and assessing its cycle of employing from the peak value angle that records.
Figure 25 is the curve chart of expression diffraction maximum shape of expection when the X-ray diffraction intensity angular distribution changes.The diffraction maximum shape of the multilayer film of Figure 25 (A) indication cycle's property structure, the diffraction maximum shape of the inhomogeneous periodic structure multilayer film of Figure 25 (B) expression, Figure 25 (C) expression comprises the diffraction maximum shape of the multilayer film of extra play (being silicon layer in this embodiment).Among the figure, transverse axis is represented the incidence angle of incident ray, and the longitudinal axis is represented reflectivity.
Shown in Figure 25 (A), under the situation of multilayer film, sharp-pointed corresponding to the peak of incidence angle with periodic structure.On the other hand, under the uneven situation of length of periodicity of the inhomogeneous periodicity multilayer film that is reported as broadband multilayer film (referring to non-patent literature 3), shown in Figure 25 (B), present many erose peaks, and the assessment difficulty of the length of periodicity of multilayer film.
In contrast to this, according to the present invention, only added extra play in the periodic structure of multilayer film, produced sharp-pointed diffraction photopeak shown in Figure 25 (C), this makes that the assessment of multilayer film Cycle Length is easy.Note, the direct thickness of measurement extra play, yet, may control the thickness of extra play according to the present invention.Particularly, might be by the thickness (rete formation speed) that forms from the material that is used for extra play based on time per unit in the rete formation work thus adjust the thickness of rete formation time control extra play, form required time from the Cycle Length assessment of the periodic structure part of multilayer film and rete and can draw rete formation speed.
Equally, among the present invention, the deep layer film layer group the layer logarithm be the superficial film group the layer logarithm half or below.As mentioned above, when multilayer film during more near base side rather than extra play, compare when only having the superficial film group, near the reflectivity the reflectivity peak descends.Here and since the layer logarithm of deep layer film layer group be the superficial film group layer logarithm half or below, the reflectivity slippage is little, reflectivity peak be shaped as the smooth or depression that becomes a little of leading section.Part can not become point and dark paddy near the reflectance peak.
Figure 26 is the curve chart of expression reflectivity peak alteration of form of Mo/Si multilayer film when the layer logarithm of deep layer film layer group changes.Among the figure, transverse axis is represented the wavelength of incident ray, and the longitudinal axis is represented reflectivity.In the example of Figure 26, extra play is a silicon.Solid line among the figure (i), chain-dotted line (ii) with dotted line (iii) respectively expression be 20 pairs of retes and the reflectivity of deep layer film layer group when being respectively 4 pairs of retes, 2 pairs of retes and 12 pairs of retes when the superficial film group.
From Figure 26 as seen, in the superficial film group is that 20 pairs of retes, deep layer film layer group are under the situation (ii) of 2 pairs of retes, and reflectivity peak is smooth inadequately and tip is arranged, yet, layer logarithm in the deep layer film layer group increases under the situation of (i) of 4 pairs of retes, and reflectivity peak is smooth.In addition, increase under the situation (iii) of 12 pairs of retes, form deep valley at the top of reflectivity peak and can not obtain smooth shape at the layer logarithm of deep layer film layer group.Therefore, the layer logarithm of preferred deep layer film layer group be the superficial film group layer logarithm at least half or below.As mentioned above, according to the present invention, can obtain the reflectivity peak that half width is wide and the peak value place is smooth.
Equally, above-mentioned second and the multi-layer mirror of the third form in, available silicon (Si), boron (B) or the material that comprises them are made extra play.The extinction coefficient k of silicon when wavelength is 13.5nm (Si) and boron (B) is quite little, for
K (Si)=0.0018 and
k(B)＝0.0041。
The effect of extra play is phase change 1/2 wavelength with reflection ray in deep layer film layer group and the superficial film group, therefore, preferably by the material that uses these materials or contain these materials (as B 4C) can make dampen out possibly little, and obtain higher reflectivity.
A fourth embodiment in accordance with the invention, multi-layer mirror have the reflectivity multilayer film, and high refractive index layer and low-index film for the EUV ray in this reflectivity multilayer film are alternately laminated.This multi-layer mirror has following feature.At first, it have the multilayer film group of light plane of incidence side (superficial film group), in the superficial film group the relative extra play on the plane of incidence side, and in the multilayer film group (deep layer film layer group) of the relative plane of incidence side of extra play.The second, in the multilayer film group on the plane of incidence side of superficial film group (first surface film layer group), low-index film is made of the material that comprises molybdenum (Mo), and high refractive index layer is made of the material that comprises silicon (Si).The 3rd, in the multilayer film group on the extra play side of superficial film group (second surface film layer group), low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si).The 4th, in the deep layer film layer group, low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si).
According to above-mentioned the 4th embodiment, the multilayer film that is made of molybdenum and silicon forms on the multilayer film with such structure, in this structure, has in fact periodically added extra play in the multilayer film what be made of ruthenium and silicon.Even the Ru/Si multilayer film of periodic structure also can have the wideer half width than Mo/Si multilayer film, even and the multilayer film that has added extra play also can have wideer half width than Mo/Si multilayer film.By forming the Mo/Si rete thereon, can increase reflectance peak, and obtain wideer half width.
According to a fifth embodiment of the invention, multi-layer mirror has the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes.This multi-layer mirror has following feature.At first, it comprises that thickness is half or above insert layer of the centre wavelength of EUV ray.The second, have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
According to the 5th above-mentioned embodiment, the part of a pair of high refractive index layer and low-index film (rete to) is made of two kinds of materials, and another part may be made of three or more material.
In addition, in the 5th embodiment, the reflectivity multilayer film can comprise a plurality of rete pieces, and the low-index film L1 of high refractive index layer H and different structure and L2 are stacked to repeating in this rete piece.For example, may comprise the L1/L2/L1/H rete to stacked repeatedly rete piece and L1/H rete to stacked repeatedly rete piece, and rete can be 1-50 to stacked number repeatedly in each rete piece.In this case, the thickness of the rete that comprises of each rete centering may be all inequality.Note the rete constitute of supposing L1 and L2 differ from one another (this also is applicable to hereinafter).In addition, in the 5th embodiment, also can carry out stacked in the autonomous thickness that changes each rete, and will to wavelength be the reflectivity of the light of 13.1nm to 13.9nm be set at 45% or more than.
According to a sixth embodiment of the invention, multi-layer mirror has the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes.This multi-layer mirror has following feature.At first, this reflectivity multilayer film comprises a plurality of rete pieces, and the low-index film L1 of high refractive index layer H and different structure and L2 repeat stacked in this rete piece to (layer to).Second, rete piece on the base side of multi-layer mirror by the L2/H rete to stacked formation repeatedly, the second rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the tertiary membrane layer piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the 4th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, the 5th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 6th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the 7th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, and the 8th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly.The 3rd, rete is 1-50 to stacked number repeatedly in each rete piece.The 4th, have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
Here, EUV beam wavelength with quite high EUV x ray refractive index x is meant that this wavelength is arranged within the scope that curve chart comprises the maximum of reflectivity and flat (reflectivity is almost constant), transverse axis in this curve chart is represented wavelength, and the longitudinal axis is represented reflectivity.For example, under the situation of solid line in above-mentioned Figure 26 (i), this scope is that wavelength is about 13.2-13.6nm.The wave-length coverage that preferably includes desired wavelength (as 13.5nm) is in the 0.5nm, more preferably in the 0.60nm, wherein reflectivity be 50% or more than, and the shape of reflectivity peak smooth (reflectivity fluctuates within ± 5%).
Here, the incidence angle with quite high EUV x ray refractive index x is meant that this angle is arranged within the scope that curve chart comprises the maximum of reflectivity and flat (reflectivity is almost constant), and the transverse axis in this curve chart is represented incidence angle, and the longitudinal axis is represented reflectivity.Note, in the 6th embodiment, preferably for at least 18 degree to the reflectivity of the glancing light line of the incidence angle incident of 25 degree scopes be 50% or more than.The ranges of incidence angles that is preferably included in the desired angle (as 20 degree) in the ranges of incidence angles of 0-25 degree is within 5 degree, more preferably within 7 of the ranges of incidence angles degree, wherein reflectivity be 50% or more than, and the shape of reflectivity peak smooth (reflectivity fluctuates within ± 5%).
According to a seventh embodiment of the invention, multi-layer mirror has the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes.This multi-layer mirror has following feature.At first, this reflectivity multilayer film comprises a plurality of rete pieces, and the low-index film L1 of high refractive index layer H and different structure and L2 are stacked to repeating in this rete piece.Second, rete piece on the base side of multi-layer mirror by the L2/H rete to stacked formation repeatedly, the second rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the tertiary membrane layer piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the 4th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 5th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, the 6th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the 7th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, and the 8th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly.The 3rd, rete is 1-50 to stacked number repeatedly in each rete piece.The 4th, have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
According to a seventh embodiment of the invention, might make the lip-deep reflectivity unanimity of entire emission according to the incident angle of each position light on the reflecting surface, total film thickness by autonomous change reflectivity multilayer film.In addition, in the 7th embodiment, might by the total film thickness that changes the reflectivity multilayer film in every layer the thickness ratio in keeping the reflectivity multilayer film set for the reflectivity of the glancing light line of the incidence angle incident of 0-20 degree scope at least be 50% or more than.
According to the eighth embodiment of the present invention, multi-layer mirror has the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes.This multi-layer mirror has following feature.At first, this reflectivity multilayer film comprises a plurality of rete pieces, and the low-index film L1 of high refractive index layer H and different structure and L2 are stacked to repeating in this rete piece.Second, rete piece on the base side of multi-layer mirror by the L1/L2/L1/H rete to stacked formation repeatedly, the second rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the tertiary membrane layer piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, the 4th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 5th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the 6th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, the 7th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 8th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, the 9th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the tenth rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, the 11 rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 12 rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, and the 13 rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly.The 3rd, rete is 1-50 to stacked number repeatedly in each rete piece.The 4th, have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.According to the eighth embodiment of the present invention, preferably for the reflectivity of the glancing light line of the incidence angle incident of 0-20 degree scope at least be 45% or more than.
According to the ninth embodiment of the present invention, multi-layer mirror has the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes.This multi-layer mirror has following feature.At first, this reflectivity multilayer film comprises a plurality of rete pieces, and the low-index film L1 of high refractive index layer H and different structure and L2 repeat stacked in this rete piece to (layer to).Second, rete piece on the base side of multi-layer mirror by the L2/H rete to stacked formation repeatedly, the second rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the tertiary membrane layer piece that begins from substrate by the L2/H rete to stacked formation repeatedly, the 4th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the 5th rete piece that begins from substrate by the L2/H rete to stacked formation repeatedly, the 6th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 7th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the 8th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 9th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the tenth rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 11 rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly, the 12 rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly, the 13 rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly, and the 14 rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly.The 3rd, rete is 1-50 to stacked number repeatedly in each rete piece.The 4th, have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.According to the 9th embodiment, preferably for wavelength be the reflectivity of the light of 13.1-13.9nm be 45% or more than.
According to the tenth embodiment of the present invention, multi-layer mirror has the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes.This multi-layer mirror has following feature.At first, this reflectivity multilayer film comprises a plurality of rete pieces, and the low-index film L1 of high refractive index layer H and different structure and L2 repeat stacked in this rete piece to (layer to).The second, the rete piece on the base side of multi-layer mirror forms by the H rete is stacked repeatedly, the second rete piece that begins from substrate by the L2/H rete to stacked formation repeatedly, and the tertiary membrane layer piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly.The 3rd, rete is 1-50 to stacked number repeatedly in each rete piece.The 4th, have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
According to the 11st embodiment of the present invention, multi-layer mirror has the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes.This multi-layer mirror has following feature.At first, the one deck at least in the high refractive index layer has half or above thickness of the centre wavelength of EUV ray.The second, have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
Exposure sources of the present invention is to be used for optionally shining the exposure sources that sensitive substrate forms composition and arranges above-mentioned multi-layer mirror in optical system by the EUV ray.According to exposure sources of the present invention, having broadband multilayer film forms at the part place in projection optical system and lamp optical system at least, therefore, can be so that the light amount be consistent in the lip-deep illumination of image forming and the pupil, and keep high image forming performance.In addition, the alignment error that can prevent to have in the projection optical system speculum that distributes in the big Cycle Length plane causes the light amount to descend.
Use multi-layer mirror of the present invention, it is quite high and have a reflectivity peak performance of wide half width to obtain reflectivity.Have the compliance of little reflectivity owing to have the multilayer film of wide spectral reflectivity half width,, therefore can in projection optical system, keep high image forming performance according to the present invention to incidence angle.
Because exposure sources of the present invention uses such multi-layer mirror, therefore can make the lip-deep illumination of image forming consistent, and keep high image forming performance with light amount in the pupil.
Description of drawings
Fig. 1 is the viewgraph of cross-section of expression according to the multi-layer mirror of first embodiment of the invention;
Fig. 2 is expression according to the curve chart of the relation between the wavelength of the reflectivity calculating value of the multi-layer mirror of first embodiment of the invention and incident ray;
Fig. 3 is expression according to the curve chart of the relation between the incidence angle of the reflectivity calculating value of the multi-layer mirror of first embodiment of the invention and incident ray;
Fig. 4 is the viewgraph of cross-section of expression according to the multi-layer mirror of second embodiment of the invention;
Fig. 5 is the curve chart of expression according to the reflectivity calculating value of the multi-layer mirror of second embodiment of the invention, and wherein (A) expression is to the dependence of incident ray wavelength, and (B) expression is to the dependence of the incidence angle of incident ray;
Fig. 6 is the viewgraph of cross-section of expression according to the multi-layer mirror of third embodiment of the invention;
Fig. 7 is the curve chart of expression according to the reflectivity calculating value of the multi-layer mirror of third embodiment of the invention, and wherein (A) expression is to the dependence of incident ray wavelength, and (B) expression is to the dependence of the incidence angle of incident ray;
Fig. 8 is the viewgraph of cross-section of expression according to the multi-layer mirror of fourth embodiment of the invention;
Fig. 9 is the curve chart of expression according to the reflectivity calculating value of the multi-layer mirror of fourth embodiment of the invention, and wherein (A) expression is to the dependence of incident ray wavelength, and (B) expression is to the dependence of the incidence angle of incident ray;
Figure 10 is expression according to the reflectivity of the multi-layer mirror of the fifth embodiment of the invention curve chart to the dependence of incidence angle;
Figure 11 is expression according to the reflectivity of the multi-layer mirror of the sixth embodiment of the invention curve chart to the dependence of incidence angle;
Figure 12 is expression according to the reflectivity of the multi-layer mirror of the sixth embodiment of the invention curve chart to the dependence of incidence angle;
Figure 13 is expression according to the reflectivity of the multi-layer mirror of the seventh embodiment of the invention curve chart to the dependence of incidence angle;
Figure 14 is the curve chart of expression according to the spectral reflectivity performance of the multi-layer mirror of eighth embodiment of the invention;
Figure 15 is the curve chart of expression according to the spectral reflectivity performance of the multi-layer mirror of ninth embodiment of the invention;
Figure 16 is the curve chart of expression according to the spectral reflectivity performance of the multi-layer mirror of tenth embodiment of the invention;
Figure 17 is expression according to the reflectivity of the multi-layer mirror of the seventh embodiment of the invention curve chart to the dependence of incidence angle;
Figure 18 represents the schematic diagram of exposure sources according to an embodiment of the invention;
Figure 19 is the curve chart of the reflectivity of the traditional multi-layer mirror of example to the dependence of incidence angle;
Figure 20 is the curve chart of the spectral reflectivity performance of the traditional multi-layer mirror of example;
Figure 21 has represented to dispose the view of the optical system of six speculums;
Figure 22 (A) is the curve chart of incident wavelength performance of the theoretical reflectivity of expression Mo/Si multilayer film and Ru/Si multilayer film, thereby (B) is expression half width and reflectivity peak for the curve chart of the variation of the formation rete logarithm that forms the Mo/Si multilayer film in the multilayer film that the Mo/Si multilayer film forms on the Ru/Si multilayer film;
Figure 23 has represented the shape of reflectivity peak when the thickness of extra play (silicon layer) changes along with the Cycle Length of Mo/Si multilayer film;
Figure 24 is the calibrator structural representation;
Figure 25 is the curve chart of expression expection diffraction maximum shape when the X-ray diffraction intensity angular distribution changes, the situation of (A) indication cycle's property multilayer film structure wherein, (B) situation of the inhomogeneous periodic structure of expression, (C) expression comprises the situation of the multilayer film of extra play;
Figure 26 is the curve chart of expression variation of the reflectivity peak shape of Mo/Si multilayer film when the rete logarithm of deep layer film layer group changes.
Embodiment
Embodiments of the invention are described below with reference to accompanying drawings.
Embodiment 1
Fig. 1 is the viewgraph of cross-section according to the multi-layer mirror of first embodiment of the invention.Substrate 1 is that 0.2nm RMS or following low thermal expansion glass are made by being polished to surface roughness.Surface in substrate 1 forms 20 pairs of Ru/Si multilayer films 3, and forms 5 pairs of Mo/Si multilayer films 5 on Ru/Si multilayer film 3.The thickness of the Cycle Length of Ru/Si multilayer film 3 (the unit period structure of Ru/Si (rete to) is in the drawings with d 11The expression) be 6.86nm, and the Cycle Length of Mo/Si multilayer film 5 (thickness that the rete of Mo/Si is right is in the drawings with d 12Expression) be 6.9nm.The Γ value of these multilayer films is 0.4 in each unit period structure.Notice that the Γ value is the thickness (d of Ru layer or Mo layer RuOr d Mo) to the ratio (Γ=d of the Cycle Length (d) of multilayer film Ru/ d or Γ=d Mo/ d).
Here, the method for multilayer film will be made in the explanation present embodiment.At first, the surface of the substrate 1 that made by low thermal expansion glass of polishing is 0.2nm RMS or following up to roughness.Secondly, on the surface of substrate 1, form 20 pairs of Ru/Si multilayer films 3 with magnetron sputtering method.Then, on the surface of Ru/Si multilayer film 3, form 5 pairs of Mo/Si multilayer films 5 with magnetron sputtering method.
Fig. 2 and Fig. 3 are the curve chart of expression according to the reflectivity calculating value of the multi-layer mirror of present embodiment.The relation of the wavelength of Fig. 2 (A) and Fig. 2 (B) expression and incident ray, the relation of the incidence angle of Fig. 3 (A) and Fig. 3 (B) expression and incident ray.Transverse axis among Fig. 2 is represented the wavelength of incident ray.Transverse axis among Fig. 3 is represented incidence angle (hereinafter, incidence angle is meant the angle that normal became of incident ray and reflecting surface).Among two figure, the longitudinal axis is all represented the reflectivity of multilayer film, solid line (i) expression multilayer film (deep layer rete side: 20 pairs of Ru/Si retes, superficial film side: reflectivity 5 pairs of Mo/Si retes).Dotted line among Fig. 2 (A) and Fig. 3 (A) (ii) and the dotted line among Fig. 2 (B) and Fig. 3 (B) (iii) be comparative example.Comparative example is (ii) represented the reflectivity of 26 pairs of Ru/Si multilayer films, and comparative example is (iii) represented the reflectivity of 27 pairs of Mo/Si multilayer films.
Shown in Fig. 2 (A), the reflectance peak of the multilayer film in the present embodiment (i) is 69.7%, and half width is 0.86nm.In contrast to this, comparative example (ii) in (26 pairs of Ru/Si multilayer films), (i) is the same with present embodiment, half width is wide to be 0.86nm, yet reflectance peak is low to moderate 67.4%, low 2% or more than.In addition, shown in Fig. 2 (B), (iii) in (27 pairs of Mo/Si multilayer films), peak value is about 70.0% at comparative example, and it is identical with present embodiment (i) basically, yet half width is 0.72nm, narrow 0.1nm or more than.As mentioned above, by on the Ru/Si multilayer film, forming the Mo/Si multilayer film, can obtain high reflectance peak and wide half width.
Shown in Fig. 3 (A), (ii) similar of the multilayer film in the present embodiment (i) and comparative example is 0 °-10 ° ranges of incidence angles internal reflection rate maximum and almost constant, yet peak reflectivity is than comparative example higher in (ii).In addition, shown in Fig. 3 (B), the peak reflectivity of multilayer film in the present embodiment (i) is than comparative example higher in (iii), and the constant therein ranges of incidence angles of peak reflectivity is than comparative example wideer in (iii).As mentioned above, in the present embodiment, can obtain reflectivity almost constant in wide ranges of incidence angles.
Notice that the Cycle Length of mentioning in the present embodiment is an example, this Cycle Length can adjust according to the target wavelength that will use.In addition, in the present embodiment, multilayer film forms by magnetron sputtering method, yet the formation method of this rete is not limited to this, and rete can form with ion beam sputtering or vacuum deposition method.In the present embodiment, the Γ value of multilayer film is set as 0.4, yet this Γ value is not limited to this, if this periodic structure is controlled, suprabasil Γ value can be increased to according to appointment 0.5.In this case, can obtain higher reflectivity (referring to above-mentioned non-patent literature 4).
Embodiment 2
Fig. 4 is the cross sectional representation of multi-layer mirror according to a second embodiment of the present invention.Substrate 10 is that 0.2nm RMS or following low thermal expansion glass are made by being polished to surface (top surface among the figure) roughness.Surface in substrate 10 forms 4 pairs of Mo/Si multilayer films (deep layer film layer group) 11.The Cycle Length of Mo/Si multilayer film 11 (thickness that the Mo/Si rete is right) is 6.9nm, and the Γ value is 0.5.
On the surface of Mo/Si multilayer film 11, form extra play 12 (being silicon layer in the present embodiment).Adjust the thickness of extra play 12 so that have 1/4 the optical thickness that is about the incident ray wavelength.In the present embodiment, the thickness of extra play 12 is about 3.5nm.In addition, on the surface of extra play 12, the formation Cycle Length is that 6.9nm, Γ value are 20 pairs of Mo/Si multilayer films (superficial film group) 13 of 0.4.In addition, among the figure further reduced representation superficial film group 13 and deep layer film layer group 11.
Fig. 5 is the curve chart of expression according to the reflectivity calculating value of the multi-layer mirror of present embodiment.The relation of the wavelength of Fig. 5 (A) expression and incident ray, the relation of the incidence angle of Fig. 5 (B) expression and incident ray.Transverse axis among Fig. 5 (A) is represented the wavelength of incident ray, and the transverse axis among Fig. 5 (B) is represented incidence angle.The longitudinal axis among two figure is all represented the calculated value of reflectivity.The reflectivity of multi-layer mirror in solid line among the figure (w1) the expression present embodiment, dotted line (C) expression comparative example.The reflectivity of 40 pairs of Mo/Si multilayer films of comparative example (C) expression.
Shown in Fig. 5 (A), the half width at the x-ray reflectivity peak (w1) in the present embodiment be 0.9nm or more than.In addition, the reflectivity peak in the present embodiment (w1) be shaped as top flat, almost constant in the wave-length coverage internal reflection rate of 13.2-13.7nm, be about 52%.When with comparative example (C) when comparing, inconsistent in the comparative example (C) of the peak value of the x-ray reflectivity in the present embodiment (w1) and simple periodic multilayer film structure, yet, knownly have superiority very much in that wide wave-length coverage internal reflection rate is consistent.
Shown in Fig. 5 (B), the reflectivity of the multilayer film in the present embodiment (w1) incidence angle be 0 ° almost constant to about 13 ° wide region.In contrast to this, in comparative example (C), the almost constant ranges of incidence angles of reflectivity is 0 ° to about 7 °.In the present embodiment, the constant ranges of incidence angles of reflectivity is wide than in the comparative example (C) obviously.Therefore, according to present embodiment, reflectivity significantly reduces the compliance of incidence angle, and knownly can obtain high reflectance in wide ranges of incidence angles.
The supplementary information of embodiment 2 will be described below.In the present embodiment, the Γ value of multilayer film changes between the top of extra play 12 and bottom, yet the present invention is not limited to this, and for example, the Γ value can be identical.In addition, in the present embodiment, silicon is used as the material of extra play 12, yet the material of extra play also is not limited to silicon.As the extra play material, except silicon, also preferred its absorbability perhaps comprises four boron monoxide (B of these materials at medium and small boron (B), Mo and the Ru in EUV zone 4C), carborundum (SiC) etc.Do not bring serious problem if reflectivity descends slightly, other material also can use.Yet,, also be necessary to make the optical thickness of extra play 12 to be about 1/4 (half of about multilayer film Cycle Length) of incident ray wavelength or add the integral multiple of Cycle Length for this thickness even under any situation in using these materials.Above-mentioned supplementary information also is applicable to embodiment 3 and 4.
In the present embodiment, extra play 12 is clipped in wherein, forms 4 pairs of retes on base side, form 20 pairs of retes on light incident side, yet the rete logarithm is not limited to this.Can change the rete logarithm according to application target, to obtain enough reflectivity or uniform reflectivity.
Embodiment 3
Fig. 6 is the cross sectional representation of the multi-layer mirror of a third embodiment in accordance with the invention.Substrate 20 is that 0.2nm RMS or following low thermal expansion glass are made by the roughness that is polished to surface (top surface among the figure).On the surface of substrate 20, form 5 pairs of Ru/Si multilayer films (deep layer film layer group) 21.The Cycle Length of Ru/Si multilayer film 21 (thickness that the Ru/Si rete is right) is 6.9nm, and the Γ value is 0.5.
On the surface of Ru/Si multilayer film 21, form extra play 22 (being silicon layer in the present embodiment).Adjust the thickness of extra play 22 so that have 1/4 the optical thickness that is about the incident ray wavelength.In the present embodiment, the thickness of extra play 22 is about 3.85nm.In addition, on the surface of extra play 22, the formation Cycle Length is that 6.96nm, Γ value are 20 pairs of Ru/Si multilayer films (superficial film group) 23 of 0.4.
Fig. 7 is the curve chart of expression according to the reflectivity calculating value of the multi-layer mirror of present embodiment.The relation of the wavelength of Fig. 7 (A) expression and incident ray, the relation of the incidence angle of Fig. 7 (B) expression and incident ray.Transverse axis among Fig. 7 (A) is represented the wavelength of incident ray, and the transverse axis among Fig. 7 (B) is represented incidence angle.The longitudinal axis among two figure is all represented the calculated value of reflectivity.The reflectivity of multi-layer mirror in solid line among the figure (w2) the expression present embodiment, dotted line (C) expression comparative example.The reflectivity of 40 pairs of Mo/Si multilayer films of comparative example (C) expression.
Shown in Fig. 7 (A), the half width at the x-ray reflectivity peak (w2) in the present embodiment be 1.0nm or more than.In addition, the reflectivity peak in the present embodiment (w2) be shaped as top flat, almost constant in the wave-length coverage internal reflection rate of 13.2-13.7nm, be about 60%.When with comparative example (C) when comparing, inconsistent in the comparative example (C) of the peak value of the x-ray reflectivity in the present embodiment (w2) and simple periodic multilayer film structure, yet, knownly have superiority very much in that wide wave-length coverage internal reflection rate is consistent.
Shown in Fig. 7 (B), the reflectivity of the multilayer film in the present embodiment (w2) incidence angle be 0 ° almost constant to about 13 ° wide region.In contrast to this, in comparative example (C), the almost constant ranges of incidence angles of reflectivity is 0 ° to about 7 °.Therefore, in the present embodiment, the constant ranges of incidence angles of reflectivity is wide than in the comparative example (C) obviously.Thus, according to present embodiment, reflectivity significantly reduces the compliance of incidence angle, and knownly can obtain high reflectance in wide ranges of incidence angles.
Attention: in the present embodiment, extra play 22 is clipped in wherein, forms 5 pairs of retes on base side, form 20 pairs of retes on light incident side, yet the rete logarithm is not limited to this.Can change the rete logarithm according to application target, to obtain enough reflectivity or uniform reflectivity.
Embodiment 4
Fig. 8 is the cross sectional representation of the multi-layer mirror of a fourth embodiment in accordance with the invention.Substrate 30 is that 0.2nm RMS or following low thermal expansion glass are made by the roughness that is polished to surface (top surface among the figure).On the surface of substrate 30, form 5 pairs of Ru/Si multilayer films (deep layer film layer group) 31.The Cycle Length of Ru/Si multilayer film 31 (thickness that the Ru/Si rete is right) is 6.96nm, and the Γ value is 0.5.
On the surface of Ru/Si multilayer film 31, form extra play 32 (being silicon layer in the present embodiment).Adjust the thickness of extra play 32 so that have 1/4 the optical thickness that is about the incident ray wavelength.In the present embodiment, the thickness of extra play 32 is about 3.75nm.In addition, on the surface of extra play 32, the formation Cycle Length is that 6.96nm, Γ value are 16 pairs of Ru/Si multilayer films (second surface film layer group) 33 of 0.4, and the formation Cycle Length is that 6.9nm, Γ value are 16 pairs of Mo/Si multilayer films (first surface film layer group) 34 of 0.4 on the surface of Ru/Si layer 33.
Fig. 9 is the curve chart of expression according to the reflectivity calculating value of the multi-layer mirror of present embodiment.The relation of the wavelength of Fig. 9 (A) expression and incident ray, the relation of the incidence angle of Fig. 9 (B) expression and incident ray.Transverse axis among Fig. 9 (A) is represented the wavelength of incident ray, and the transverse axis among Fig. 9 (B) is represented incidence angle.The longitudinal axis among two figure is all represented the calculated value of reflectivity, the reflectivity of multi-layer mirror in solid line (w3) the expression present embodiment, dotted line (C) expression comparative example.The reflectivity of 40 pairs of Mo/Si multilayer films of comparative example (C) expression.
Shown in Fig. 9 (A), the half width at the x-ray reflectivity peak (w3) in the present embodiment be 1.0nm or more than.In addition, the reflectivity peak in the present embodiment (w3) be shaped as top flat, almost constant in the wave-length coverage internal reflection rate of 13.2-13.7nm, be about 62%.When with comparative example (C) when comparing, inconsistent in the comparative example (C) of the peak value of the x-ray reflectivity in the present embodiment (w3) and simple periodic multilayer film structure, yet, knownly have superiority very much in that wide wave-length coverage internal reflection rate is consistent.
Shown in Fig. 9 (B), the reflectivity of the multilayer film in the present embodiment (w3) incidence angle be 0 ° almost constant to about 10 ° wide region, and be about 15 ° of reflectivity up to incidence angle and also significantly do not descend.In contrast to this, in comparative example (C), the almost constant ranges of incidence angles of reflectivity is 0 ° to about 7 °, and is that about 10 ° of vicinity reflectivity sharply descend in incidence angle.Therefore, in the present embodiment, the constant ranges of incidence angles of reflectivity is wide than in the comparative example (C) obviously.Thus, in the present embodiment, reflectivity significantly reduces the compliance of incidence angle, and knownly can obtain high reflectance in wide ranges of incidence angles.
Attention: in the present embodiment, extra play 32 is clipped in wherein, forms 5 pairs of retes on base side, on light incident side, form 21 (=16+5) to rete, however the rete logarithm is not limited to this.Can change the rete logarithm according to application target, to obtain enough reflectivity or uniform reflectivity.
Embodiment 5
Then, with explanation multi-layer mirror according to a fifth embodiment of the invention.In the multilayer film of present embodiment, by using the Needle method to optimize the material structure and the thickness of each rete, so that be 13.5nm and the high reflectance that can obtain uniformity with the EUV ray (far ultraviolet rays) of 15 ° to 25 ° incidence angle incident for wavelength.
Multilayer film in the present embodiment is to form in the synthetic silica glass substrate of meticulous polishing, and it comprises a plurality of rete pieces, and the rete of different structure repeats stacked to (unit period structure) in this rete piece.Here, rete is low-index film of being made by the material that EUV is had low-refraction and a kind of film layer structure that is laminated into multilayer film by the high refractive index layer that the material that EUV is had high index of refraction is made to (unit period structure).In the present embodiment, molybdenum (Mo) and ruthenium (Ru) are used as low-index film, and silicon (Si) is used as high refractive index layer.
In addition, in the following description, the structure of multilayer film is represented by the structure of a pair of rete in each rete piece (unit period structure) and the logarithm (repeat number) of stacked rete, and each rete piece is represented (A rete piece) by the counting that begins from substrate.
The structure of multilayer film is as shown in table 1 in the present embodiment.The gross thickness of multilayer film is about 450nm in the present embodiment.In addition, the thickness of every tunic of preferred multilayer film is non-constant, and adjusts thickness according to the position of every tunic on multilayer film, thereby obtains desirable reflectivity.
Table 1
A The unit period structure Repeat number
1 Ru/Si 3
2 Ru/Mo/Si 4
3 Mo/Si 6
4 Mo/Ru/Mo/Si 1
5 Ru/Mo/Si 4
6 Mo/Si 20
7 Mo/Ru/Mo/Si 14
8 Mo/Si 4
9 Mo 1
In table 2 below, table 3 and the table 4, represented the thickness of every tunic in the multilayer film of present embodiment.In these tables, every tunic of multilayer film is used from the counting of base side and is represented, and has represented the preferred thickness scope (nm) and the preferred thickness (nm) of every tunic.Notice that because the rete number of multilayer film is big, this table is represented with a plurality of tables that separate.
Table 2
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
1 2 Ru Si 6～2 6～2 4 4
3 4 Ru Si 6～2 6～2 4 4
5 6 Ru Si 6～2 6～2 4 4
7 8 9 Ru Mo Si 5～2 2～0 6～2 3 1 4
10 11 12 Ru Mo Si 4～1 2～0 6～2 2 1 4
13 14 15 Ru Mo Si 4～1 2～0 6～2 2 1 4
16 17 18 Ru Mo Si 3～1 3～1 6～2 2 2 4
19 20 Mo Si 5～2 6～2 3 4
21 22 Mo Si 4～1 6～2 2 4
23 24 Mo Si 2～0 6～2 1 4
25 26 Mo Si 5～2 6～2 3 4
27 28 Mo Si 5～2 6～2 4 4
29 30 Mo Si 5～2 6～2 4 4
31 32 33 34 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
35 36 37 Ru Mo Si 3～1 2～0 6～2 2 2 4
38 39 40 Ru Mo Si 3～1 3～1 6～2 2 2 4
41 42 43 Ru Mo Si 2～0 3～1 6～2 2 2 4
44 45 46 Ru Mo Si 2～0 4～1 6～2 1 2 4
47 48 Mo Si 5～2 6～2 3 4
49 50 Mo Si 5～2 7～2 3 4
51 52 Mo Si 4～1 7～2 3 5
53 54 Mo Si 3～1 25～8 2 17
55 56 Mo Si 3～1 7～2 2 5
57 58 Mo Si 4～1 7～2 3 4
59 60 Mo Si 5～2 6～2 3 4
61 62 Mo Si 5～2 6～2 3 4
63 64 Mo Si 5～2 6～2 3 4
65 66 Mo Si 5～2 6～2 3 4
67 68 Mo Si 5～2 6～2 3 4
Table 3
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
69 70 Mo Si 5～2 6～2 3 4
71 72 Mo Si 5～2 6～2 3 4
73 74 Mo Si 5～2 7～2 3 4
75 76 Mo Si 5～2 7～2 3 5
77 78 Mo Si 4～1 8～3 3 5
79 80 Mo Si 3～1 35～12 2 23
81 82 Mo Si 4～1 7～2 3 5
83 84 Mo Si 5～2 6～2 3 4
85 86 Mo Si 5～2 6～2 3 4
87 88 89 90 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
91 92 93 94 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
95 96 97 98 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
99 100 101 102 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
103 104 105 106 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
107 108 109 110 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
111 112 113 114 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
115 116 117 118 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
119 120 121 122 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
123 124 125 126 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 2 4
Table 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
127 128 129 130 Mo Ru Mo Si 2～0 2～0 2～0 6～2 1 2 2 4
131 132 133 134 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
135 136 137 138 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
139 140 141 142 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
143 144 Mo Si 5～2 6～2 3 4
145 146 Mo Si 5～2 6～2 3 4
147 148 Mo Si 5～2 7～2 3 4
149 150 Mo Si 5～2 7～2 3 4
151 Mo 4～1 3
According to this table, from the silicon film of the 54th layer of base side number and the 80th layer than other rete thick (in the following description, these are referred to as extremely thick silicon film).The thickness of this extremely thick silicon film be EUV ray center wavelength half or more than, and by adjusting the wave-length coverage or the incidence angle of the EUV ray with quite high EUV x ray refractive index x are broadened from the differing of EUV ray of the boundary reflection of each rete as insert layer.
Figure 10 is that expression is according to the multi-layer mirror reflectivity of the present embodiment curve chart to the dependence of incidence angle.Among the figure, transverse axis represents to inject the incidence angle (degree (°) of the light of multi-layer mirror), the longitudinal axis is represented the reflectivity (%) of wavelength (λ) for the EUV ray of 13.5nm.As seen from the figure, in the multilayer film of present embodiment, in wide incident scope (incidence angle is at least 18 ° to 25 °), can obtain 50% or above high reflectance for the EUV ray.Especially, in A1 zone in the drawings (ranges of incidence angles is that θ 1 (18.4 °) is to θ 2 (24.8 °)), reflectivity is almost constant near 60%, and reflectivity does not almost have dependence to incidence angle, therefore, can obtain high resolution.
Embodiment 6
Then, the sixth embodiment of the present invention will be described.In the multilayer film of present embodiment, when keeping the thickness ratio of each rete, optimized the material structure and the total film thickness of each rete, so that be 13.5nm and can obtain high reflectivity with the EUV ray of 0 ° to 20 ° incidence angle incident for wavelength.Use the multilayer film among the embodiment, the total film thickness of the every part by the control optical element for example all as one man obtains high reflectance with the different light ray incidence angle to each part in the identical reflecting surface on the entire emission surface.
Multilayer film in the present embodiment is to form by the multilayer film that forms structure shown in the table 5 below having in the synthetic silica glass substrate of meticulous polishing.Notice that the total film thickness of multilayer film is about 420nm-430nm in the present embodiment.In addition, the thickness of every tunic of preferred multilayer film is non-constant, can adjust according to the position change thickness on multilayer film, thereby obtain desirable reflectivity.
Table 5
A The unit period structure Repeat number
1 Ru/Si 4
2 Ru/Mo/Si 6
3 Mo/Si 5
4 Ru/Mo/Si 5
5 Mo/Ru/Mo/Si 2
6 Mo/Si 9
7 Mo/Ru/Mo/Si 19
8 Mo/Si 3
9 Mo 1
In table 6 below, table 7 and the table 8, represented the thickness of every tunic in the multilayer film of present embodiment.Notice that because the rete number of multilayer film is many, this table is represented with a plurality of tables that separate.According to these tables, from the base side number, the 28th and the 69th silicon layer is extremely thick silicon film.
Table 6
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
1 2 Ru Si 9～3 6～2 6 4
3 4 Ru Si 6～2 6～2 4 4
5 6 Ru Si 6～2 6～2 4 4
7 8 Ru Si 6～2 6～2 4 4
9 10 11 Ru Mo Si 5～2 2～0 6～2 3 1 4
12 13 14 Ru Mo Si 4～1 2～0 6～2 3 1 4
15 16 17 Ru Mo Si 4～1 2～0 6～2 3 1 4
18 19 20 Ru Mo Si 4～1 2～0 6～2 3 1 4
21 22 23 Ru Mo Si 3～1 2～0 6～2 2 1 4
24 25 26 Ru Mo Si 2～0 3～1 6～2 1 2 4
27 28 Mo Si 5～2 22～7 3 15
29 30 Mo Si 5～2 6～2 3 4
31 32 Mo Si 5～2 6～2 3 4
33 34 Mo Si 5～2 6～2 3 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
35 36 Mo Si 5～2 6～2 3 4
37 38 39 Ru Mo Si 2～0 3～1 6～2 1 2 4
40 41 42 Ru Mo Si 2～0 3～1 6～2 2 2 4
43 44 45 Ru Mo Si 2～0 3～1 6～2 1 2 4
46 47 48 Ru Mo Si 2～0 3～1 6～2 1 2 4
49 50 51 Ru Mo Si 2～0 3～1 6～2 1 2 4
52 53 54 55 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
56 57 58 59 Mo Ru Mo Si 2～0 2～0 4～1 6～2 1 1 2 4
60 61 Mo Si 5～2 7～2 3 4
62 63 Mo Si 4～1 7～2 3 5
64 65 Mo Si 4～1 7～2 3 5
66 67 Mo Si 3～1 8～3 2 5
Table 7
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
68 69 Mo Si 2～0 36～12 1 24
70 71 Mo Si 3～1 7～2 2 5
72 73 Mo Si 4～1 6～2 3 4
74 75 Mo Si 5～2 6～2 3 4
76 77 Mo Si 5～2 6～2 3 4
78 79 80 81 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
82 83 84 85 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 2 4
86 87 88 89 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
90 91 92 93 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
94 95 96 97 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
98 99 100 101 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
102 103 104 105 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
106 107 108 109 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
110 111 112 113 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
114 115 116 117 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
118 119 120 121 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
122 123 124 125 Mo Ru Mo Si 2～0 3～1 2～0 6～2 1 2 1 4
Table 8
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
126 127 128 129 Mo Ru Mo Si 2～0 2～0 2～0 6～2 1 2 2 4
130 131 132 133 Mo Ru Mo Si 2～0 2～0 2～0 6～2 1 1 2 4
134 135 136 137 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
138 139 140 141 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
142 143 144 145 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
146 147 148 149 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
150 151 152 153 Mo Ru Mo Si 2～0 2～0 3～1 6～2 1 1 2 4
154 155 Mo Si 5～2 6～2 3 4
156 157 Mo Si 5～2 6～2 3 4
158 159 Mo Si 4～1 7～1 3 4
160 Mo 4～1 3
Figure 11 and 12 is expressions according to the reflectivity of the multi-layer mirror of the present embodiment curve chart to the dependence of incidence angle.Among the figure, transverse axis represents that light injects the incidence angle of multi-layer mirror (degree (°)), the longitudinal axis is represented the reflectivity (%) to the EUV ray with 13.5nm wavelength (λ).Reflectivity shown in Figure 11 and Figure 12 obtains from multilayer film, and in the every tunic thickness ratio that keeps multilayer film, the total film thickness of this multilayer film changes.Thickness shown in each figure is for being assumed to 1.000 and in 1.000 (Figure 11 (A)) value during with 0.0025 interval variation to the scope of 0.9650 (Figure 12 (G)) when the total film thickness of the multilayer film among Figure 11 (A).
Regional A2 among each figure between two vertical dotted lines represents the ranges of incidence angles that reflectivity is little to the compliance of incidence angle.By Figure 11 and Figure 12 as seen, along with total film thickness increases, regional A2 moves (the right of shifting to figure) to bigger incidence angle place.For example, when regional A2 was positioned at about 4 °-9 ° ranges of incidence angles in Figure 12 (G), in Figure 11 (A), this scope was about 17 °-20 °.Therefore, according to present embodiment,, in 0 °-20 ° wide ranges of incidence angles, can obtain 50% or above high reflectance by changing the total film thickness of multilayer film.
Embodiment 7
Then the seventh embodiment of the present invention will be described.In the multilayer film of present embodiment, the material structure and the thickness of each rete are optimised, so that be 13.5nm and can obtain high reflectivity through the EUV ray of 0 ° to 20 ° whole incident ray scope for wavelength.Multilayer film in the present embodiment is to form by the multilayer film that forms structure shown in the table 9 below having in the synthetic silica glass substrate of meticulous polishing.Notice that the total film thickness of multilayer film is about 280nm in the present embodiment.In addition, the thickness of every tunic of preferred multilayer film is non-constant, and changes thickness adjustment according to the position on multilayer film, thereby obtains desirable reflectivity.
Table 9
A The unit period structure Repeat number
1 Mo/Ru/Mo/Si 3
2 Ru/Mo/Si 2
3 Mo/Ru/Mo/Si 1
4 Ru/Mo/Si 5
5 Mo/Si 3
6 Mo/Ru/Mo/Si 4
7 Ru/Mo/Si 1
8 Mo/Ru/Mo/Si 1
9 Mo/Si 3
10 Mo/Ru/Mo/Si 2
11 Ru/Mo/Si 1
12 Mo/Ru/Mo/Si 10
13 Mo/Si 1
14 Mo 1
Figure 13 is expression according to the reflectivity of the multi-layer mirror of the present embodiment curve chart to the dependence of incidence angle.Among the figure, transverse axis represents that light injects the incidence angle of multi-layer mirror (degree (°)), the longitudinal axis is represented the reflectivity (%) to the EUV ray with 13.5nm wavelength (λ).As seen from the figure, according to the multi-layer mirror of present embodiment, in 0 °-20 ° whole ranges of incidence angles, can obtain 45% or above high reflectance (in more detail, be 54% or more than).
Embodiment 8
Then the eighth embodiment of the present invention will be described.In the multilayer film of present embodiment, the material structure and the thickness of each rete are optimised, so that be that the EUV ray (far ultraviolet) of 13.1-13.9nm and vertical incidence can obtain high reflectivity for wavelength.Multilayer film in the present embodiment is to form by the multilayer film that forms structure shown in the table 10 below having in the synthetic silica glass substrate of meticulous polishing.Notice that the total film thickness of multilayer film is about 360nm in the present embodiment.In addition, the thickness of every tunic of preferred multilayer film is non-constant, and changes thickness adjustment according to the position on multilayer film, thereby obtains desirable reflectivity.
Table 10
A The unit period structure Repeat number
1 Ru/Si 1
2 Ru/Mo/Si 1
3 Ru/Si 1
4 Mo/Si 2
5 Ru/Si 1
6 Ru/Mo/Si 5
7 Mo/Si 3
8 Ru/Mo/Si 5
9 Mo/Si 5
10 Ru/Mo/Si 4
11 Mo/Si 4
12 Ru/Mo/Si 12
13 Mo/Ru/Mo/Si 2
14 Mo/Si 1
15 Mo 1
In table 11 below and the table 12, represented the thickness of every tunic in the multilayer film of present embodiment.Notice that because the rete number of multilayer film is many, this table is represented with a plurality of tables that separate.According to these tables, from the base side number, the the the 28th, the 51st, the 73rd and the 75th silicon layer is extremely thick silicon film.
Table 11
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
1 2 Ru Si 6～2 5～2 4 3
3 4 5 Ru Mo Si 5～2 2～0 5～2 3 1 3
6 7 Ru Si 5～2 6～2 4 4
8 9 Mo Si 8～3 7～2 6 5
10 11 Mo Si 6～2 5～2 4 3
12 13 Ru Si 5～2 5～2 3 4
14 15 16 Ru Mo Si 4～1 2～0 5～2 3 1 4
17 18 19 Ru Mo Si 4～1 2～0 5～2 3 1 4
20 21 22 Ru Mo Si 3～1 2～0 5～2 2 2 4
23 24 25 Ru Mo Si 2～0 3～1 5～2 2 2 4
26 27 28 Ru Mo Si 2～0 4～1 12～4 1 2 8
29 30 Mo Si 2～0 6～2 1 4
31 32 Mo Si 5～2 5～2 3 4
33 34 Mo Si 5～2 6～2 3 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
35 36 37 Ru Mo Si 2～0 3～1 6～2 1 2 4
38 39 40 Ru Mo Si 2～0 3～1 6～2 2 2 4
41 42 43 Ru Mo Si 2～0 3～1 6～2 1 2 4
44 45 46 Ru Mo Si 2～0 3～1 6～2 1 2 4
47 48 49 Ru Mo Si 2～0 4～1 6～2 1 2 4
50 51 Mo Si 4～1 24～8 3 16
52 53 Mo Si 2～0 7～2 1 4
54 55 Mo Si 5～2 5～2 3 4
56 57 Mo Ru 5～2 5～2 3 4
58 59 Mo Si 5～2 6～2 4 4
60 61 62 Ru Mo Si 2～0 3～1 6～2 1 2 4
63 64 65 Ru Mo Si 2～0 3～1 6～2 1 2 4
66 67 68 Ru Mo Si 2～0 3～1 6～2 1 2 4
Table 12
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
69 70 71 Ru Mo Si 2～0 4～1 6～2 1 2 4
72 73 Mo Si 4～1 18～6 3 12
74 75 Mo Si 2～0 15～5 1 10
76 77 Mo Si 4～1 6～2 3 4
78 79 Mo Si 5～2 6～2 3 4
80 81 82 Ru Mo Si 2～0 3～1 6～2 1 2 4
83 84 85 Ru Mo Si 3～1 2～0 6～2 2 1 4
86 87 88 Ru Mo Si 3～1 2～0 6～2 2 1 4
89 90 91 Ru Mo Si 3～1 2～0 6～2 2 1 4
92 93 94 Ru Mo Si 3～1 2～0 6～2 2 1 4
95 96 97 Ru Mo Si 3～1 2～0 6～2 2 1 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
98 99 100 Ru Mo Si 3～1 2～0 6～2 2 1 4
101 102 103 Ru Mo Si 3～1 2～0 6～2 2 1 4
104 105 106 Ru Mo Si 3～1 2～0 6～2 2 1 4
107 108 109 Ru Mo Si 3～1 2～0 6～2 2 1 4
110 111 112 Ru Mo Si 3～1 2～0 6～2 2 1 4
113 114 115 Ru Mo Si 3～1 2～0 6～2 2 1 4
116 117 118 119 Mo Ru Mo Si 2～0 2～0 2～0 6～2 1 2 1 4
120 121 122 123 Mo Ru Mo Si 2～0 2～0 2～0 6～2 1 1 1 4
124 125 Mo Si 4～1 6～2 3 4
126 Mo 4～1 3
Figure 14 is the curve chart of expression according to the spectral reflectivity performance of the multi-layer mirror of present embodiment.Among the figure, transverse axis is represented the wavelength (nm) of incident ray, and the longitudinal axis is represented reflectivity (%).Notice that the incidence angle of its supposition light is 0 ° (vertical incidence on reflecting surface).As seen from the figure, according to the multi-layer mirror of present embodiment, in whole above-mentioned wide wave-length coverage, can obtain 45% or above high reflectance (in more detail, be 50% or more than).
Embodiment 9
Then the ninth embodiment of the present invention will be described.In the multilayer film of present embodiment, the material structure and the thickness of each rete are optimised, so that can be the high as far as possible reflectivity of EUV ray acquisition of 13.5nm and vertical incidence for wavelength.Multilayer film in the present embodiment is to form by the multilayer film that forms structure shown in the table 13 below having in the synthetic silica glass substrate of meticulous polishing.Notice that the total film thickness of multilayer film is about 510nm in the present embodiment.In addition, the thickness of every tunic of preferred multilayer film is non-constant, and changes thickness adjustment according to the position on multilayer film, thereby obtains desirable reflectivity.
Table 13
A The unit period structure Repeat number
1 Si 1
2 Ru/Si 17
3 Ru/Mo/Si 56
4 Ru/Mo 1
Figure 15 is the curve chart of expression according to the spectral reflectivity performance of the multi-layer mirror of present embodiment.Among the figure, transverse axis is represented the wavelength (nm) of incident ray, and the longitudinal axis is represented reflectivity (%).Notice that its supposition incidence angle is 0 ° (vertical incidence on reflecting surface).As seen from the figure, according to the multi-layer mirror of present embodiment, be the EUV ray of 13.5nm for wavelength, can obtain than among above-mentioned Figure 20 higher 70% or above high reflectance (according to appointment 76%).
Embodiment 10
Then the tenth embodiment of the present invention will be described.In the multilayer film of present embodiment, the material structure and the thickness of each rete are optimised, so that be that the EUV ray (far ultraviolet) of 13.5-14.2nm can obtain high reflectance for wavelength when vertical incidence.Multilayer film in the present embodiment is the Mo/Si multilayer film, and wherein molybdenum layer (low-index film) and silicon layer (high refractive index layer) are alternately stacked in the synthetic silica glass substrate of meticulous polishing.
Notice that the total film thickness of multilayer film is about 330nm in the present embodiment.In addition, the thickness of every tunic of preferred multilayer film is non-constant, and changes thickness adjustment according to the position on multilayer film, thereby obtains desirable reflectivity.In table 14 below and the table 15, represented the thickness of every tunic of multilayer film in the present embodiment.Notice that because the rete number of multilayer film is many, this table is represented with a plurality of tables that separate.According to these tables, the 46th silicon layer (almost being positioned at the middle silicon layer of multilayer film) is extremely thick silicon film.
Table 14
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
1 2 Mo Si 20～5 6～2 11 4
3 4 Mo Si 6～2 6～2 4 4
5 6 Mo Si 6～2 6～2 4 3
7 8 Mo Si 9～3 8～3 6 5
9 10 Mo Si 7～2 6～2 4 3
11 12 Mo Si 6～2 6～2 4 4
13 14 Mo Si 6～2 6～2 4 4
15 16 Mo Si 6～2 6～2 4 4
17 18 Mo Si 6～2 6～2 4 4
19 20 Mo Si 6～2 6～2 4 4
21 22 Mo Si 6～2 6～2 4 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
23 24 Mo Si 6～2 6～2 3 4
25 26 Mo Si 12～3 6～2 7 4
27 28 Mo Si 6～2 6～2 3 4
29 30 Mo Si 6～2 6～2 4 4
31 32 Mo Si 6～2 6～2 4 4
33 34 Mo Si 6～2 6～2 4 4
35 36 Mo Si 6～2 6～2 4 4
37 38 Mo Si 6～2 6～2 4 4
39 40 Mo Si 6～2 6～2 3 4
41 42 Mo Si 6～2 6～2 3 4
43 44 Mo Si 6～2 8～2 3 5
Table 15
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
45 46 Mo Si 2～0 14～6 1 7
47 48 Mo Si 6～2 6～2 3 4
49 50 Mo Si 6～2 6～2 3 4
51 52 Mo Si 6～2 6～2 4 4
53 54 Mo Si 6～2 6～2 4 4
55 56 Mo Si 6～2 6～2 4 4
57 58 Mo Si 6～2 6～2 4 4
59 60 Mo Si 6～2 6～2 4 4
61 62 Mo Si 6～2 6～2 4 4
63 64 Mo Si 6～2 6～2 4 4
65 66 Mo Si 6～2 6～2 4 4
The unit period structure Preferred thicknesses of layers scope (nm) Preferred thicknesses of layers (nm)
67 68 Mo Si 6～2 6～2 3 4
69 70 Mo Si 6～2 6～2 3 4
71 72 Mo Si 6～2 6～2 3 4
73 74 Mo Si 6～2 6～2 3 4
75 76 Mo Si 6～2 6～2 3 4
77 78 Mo Si 6～2 6～2 3 4
79 80 Mo Si 6～2 6～2 3 4
81 82 Mo Si 6～2 7～2 3 4
83 84 Mo Si 6～2 6～2 3 4
85 86 Mo Si 5～1 6～2 3 3
Figure 16 is the curve chart of expression according to the spectral reflectivity performance of the multi-layer mirror of present embodiment.Notice that it uses ion beam sputtering to form multilayer film.Among the figure, transverse axis is represented the wavelength (nm) of incident ray, and the longitudinal axis is represented reflectivity (%).The incidence angle of supposing light is 0 ° (vertical incidence on reflecting surface).Solid line among Figure 16 is represented the wavelength performance of reflectivity when using sputter gas and argon (Ar) gas to form rete, and dotted line is represented the wavelength performance of reflectivity when using krypton (Kr) gas to form rete as sputter gas.
From Figure 16 as seen, according to the multi-layer mirror in the present embodiment, in above-mentioned wide wave-length coverage, can obtain 45% or above high reflectance.In addition, when shown in dotted line when forming rete with Kr gas, compare with the situation that forms rete with Ar gas that solid line is represented, reflectivity peak is bigger, and the half width of spectral reflectivity is wideer.
Figure 17 is expression according to the reflectivity of the multi-layer mirror of the present embodiment curve chart to the dependence of incidence angle.Among the figure, transverse axis represents that light injects the incidence angle of multi-layer mirror (degree (°)), the longitudinal axis is represented the reflectivity (%) to the EUV ray with 13.5nm wavelength (λ).As seen from the figure, according to the multi-layer mirror of present embodiment, in 0 °-20 ° whole wide ranges of incidence angles, can obtain 45% or above high reflectance (more preferably 50% or more than).
Embodiment 11
Figure 18 is the schematic diagram of exposure sources according to an embodiment of the invention.As shown in the figure, EUV exposure 100 has X-ray generator (laser plasma X-ray source) 101.This X-ray generator 101 has spherical vacuum tank 102, vacuumizes with the inside of vacuum pump to vacuum tank 102.Upsides in the vacuum tank 102 have been settled multilayer film paraboloidal mirror 104 in the drawings, its reflecting surface 104a face down in the drawings (+Z direction).
Lens 106 have been settled on the right side of vacuum tank 102 among the figure, have settled the not shown lasing light emitter that goes out on the right side of lens 106.This lasing light emitter is at-Y direction radiation pulse laser 105.These pulse laser 105 scioptics 106 converge on the focus of multilayer film paraboloidal mirror.This focus place has settled target material [xenon (Xe) etc.], and when shining target materials 103 with the pulse laser 105 that is converged, produces plasma 107.Plasma 107 radiates grenz ray (EUV ray) 108 in the wave-length coverage near 13nm.
Has the X ray filter 109 of deleting visible light in the bottom of vacuum tank 102.EUV ray 108 is imported into exposure room 110 by the reflection of multilayer film paraboloidal mirror 104 edge+Z directions through X ray filter 109.At this moment, the visible spectrum of EUV ray 108 is deleted.
Notice that xenon is used as target material in the present embodiment, yet, also can use xenon group (cluster) or xenon drop, and also can use the material as tin (Sn).In addition, use laser plasma X-ray source as X-ray generator 101, yet, also can adopt the discharge plasma x-ray source.The discharge plasma x-ray source is transformed into plasma by high pulse voltage discharge with target material, and causes from this plasma and radiate X ray.
Exposure room 110 is arranged below the X-ray generator 101 among the figure.In exposure room 110, settled lamp optical system 113.This lamp optical system 113 is made of condenser system speculum, fly's eye optical system speculum etc. (representing with the shape of simplifying among the figure), will form from the EUV ray 108 that X-ray generator 101 is injected circular, and with the left side of its directive figure.
Settled speculum 115 in the left side of lamp optical system 113.Speculum 115 is circular concave mirrors, the support component vertical support of not expressed among the figure (being parallel to the Z axle), so its reflecting surface 115a is towards the right side (+Y direction) of figure.The right-hand side of speculum 115 has been settled the crooked mirror 116 of light path in the drawings.Above the crooked mirror 116 of this light path, level (being parallel to the XY plane) has been settled reflection-type mask 111 in the drawings, so reflecting surface 111a face down (+Z direction).The EUV ray of launching from lamp optical system 113 be reflected mirror 115 reflections and converge after, via the crooked mirror 116 of light path, arrive the reflecting surface 111a of reflection-type mask 111.
Speculum 115 and 116 is by thermal deformation and reflecting surface are constituted by the low thermal expansion glass substrate of height retrofit slightly.The same with the reflecting surface of multilayer film paraboloidal mirror, on the reflecting surface 115a of speculum 115, the alternately laminated formation reflectivity of high refractive index layer and low-index film multilayer film.Note, when using wavelength, can use material such as molybdenum (Mo), ruthenium (Ru) and rhodium (Rh) and material such as silicon (Si), beryllium (Be) and four boron monoxide (B as the X ray of 10-15nm 4C) the reflectivity multilayer film that combines.
Equally, on the reflecting surface 111a of reflection-type mask 111, form the reflective coating that constitutes by multilayer film.On the reflective coating of reflection-type mask 111, form the mask composition according to the composition that will be sent on the wafer 112.Reflection-type mask 111 is connected with the mask frame 117 shown in the figure top.This mask frame 117 can move on the Y direction at least, and is sequentially scanned on reflection-type mask 111 by the EUV ray of crooked mirror 116 reflections of light path.
The following projection optical system 114 and the wafer (having smeared the substrate of photosensitive resin) 112 from top to bottom settled successively of reflection-type mask 111 among the figure.Projection optical system 114 is made of a plurality of speculums etc.Wafer 112 is fixed on can be on the wafer rack 118 that moves on the XYZ direction, so that its plane of exposure 112a (Z direction) in the drawings up.The EUV ray of reflection type mask 111 reflections is projected optical system and has cut down predetermined reduction coefficient (as 1/4), and forms image on wafer 112, and the composition on the mask 111 is sent on the wafer 112.
On the speculum (do not comprise and utilize plunderring of total reflection to penetrate mirror) that in the exposure sources 100 of present embodiment, uses, form any the multilayer film that has in the structure that illustrates among above-mentioned first to the tenth embodiment.Notice that the speculum in multilayer film paraboloidal mirror 104, lamp optical system 113 and the projection optical system 114 etc. all have the not shown cooling body that goes out, and surpass 100 ℃ to prevent surface temperature.
Because the incident ray of the EUV ray of the reflecting surface of directive multilayer film paraboloidal mirror 104 is quite big according to the different variations in its position in the plane, so length of periodicity also changes quite big in the plane.As mentioned above, the Cycle Length of multilayer film paraboloidal mirror 104 distributes and deviation has slightly taken place in the substrate installation site, therefore, deviation is arranged, reflectivity thereby change between incidence angle of expecting during owing to control cycle length and the actual incidence angle.According to present embodiment, have multi-layer mirror by use according to the wide half width of the reflectivity of the foregoing description, such reflectance varies can take place hardly.In addition, the multilayer film that has wide reflectivity range by use is as the multi-layer mirror that constitutes lamp optical system 113 and projection optical system 114, the image forming performance of optical system can keep highly, therefore, might make the lip-deep illumination of image forming consistent, and can obtain excellent resolution with light amount in the pupil.
In the present embodiment, multilayer film paraboloidal mirror 104 grades are cooled, yet, if cooling is carried out inadequately, also may be in second to the 4th embodiment, though utilize temperature increase reflectivity also descend seldom film layer structure (Mo/SiC/Si, MoC/Si multilayer film etc.), in its structure of knot, increase extra play.
As mentioned above, the present invention can be widely used in multi-layer mirror and exposure sources field.

Claims (26)

1. multi-layer mirror with reflectivity multilayer film, high refractive index layer and low-index film to the EUV ray in this reflectivity multilayer film are alternately laminated, wherein:
In the multilayer film on light plane of incidence side (superficial film group), low-index film is made of the material that comprises molybdenum (Mo), and high refractive index layer is made of the material that comprises silicon (Si); And
In the multilayer film (deep layer film layer group) on the relative light plane of incidence side of described superficial film group, low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si).
2. according to the multi-layer mirror of claim 1, the rete logarithm of high refractive index layer and low-index film is 2-10 in the wherein said superficial film group.
3. method of making multi-layer mirror, this multi-layer mirror has the reflectivity multilayer film, and high refractive index layer and low-index film to the EUV ray in this reflectivity multilayer film are alternately laminated, and described method comprises step:
The material that comprises the material of ruthenium and comprise silicon by alternating deposit in substrate is to form the deep layer film layer group; With
The material that comprises the material of molybdenum and comprise silicon by alternating deposit on described deep layer film layer group is to form the superficial film group.
4. multi-layer mirror with reflectivity multilayer film, high refractive index layer and low-index film to the EUV ray in this reflectivity multilayer film are alternately laminated, and this multi-layer mirror comprises:
Multilayer film group on light plane of incidence side (superficial film group);
Extra play on the relative light plane of incidence side of described superficial film group; With
Multilayer film group (deep layer film layer group) on the relative light plane of incidence side of described extra play, wherein:
The reflectivity of described superficial film group is higher than the reflectivity of described deep layer film layer group; And
Reflection ray is because the existence of described extra play and phase change, causes the reflectance peak of entire emission mirror to keep littler when not having described extra play, and the reflectivity maintenance around the peak wavelength is higher when not having described extra play.
5. multi-layer mirror with reflectivity multilayer film, high refractive index layer and low-index film to the EUV ray in this reflectivity multilayer film are alternately laminated, and this multi-layer mirror comprises:
Multilayer film group on light plane of incidence side (superficial film group);
Extra play on the relative light plane of incidence side of described superficial film group; With
Multilayer film group (deep layer film layer group) on the relative light plane of incidence side of described extra play, wherein:
In described superficial film group, low-index film is made of the material that comprises molybdenum (Mo), and high refractive index layer is made of the material that comprises silicon (Si);
In described deep layer film layer group, low-index film is made of the material that comprises molybdenum (Mo), and high refractive index layer is made of the material that comprises silicon (Si); And
The thickness of described extra play is about half of Cycle Length of described multilayer film, or the integral multiple of Cycle Length adds about Cycle Length half.
6. multi-layer mirror with reflectivity multilayer film, high refractive index layer and low-index film to the EUV ray in this reflectivity multilayer film are alternately laminated, and this multi-layer mirror comprises:
Multilayer film group on light plane of incidence side (superficial film group);
Extra play on the relative light plane of incidence side of described superficial film group; With
Multilayer film group (deep layer film layer group) on the relative light plane of incidence side of described extra play, wherein:
In described superficial film group, low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si);
In described deep layer film layer group, low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si); And
The thickness of described extra play is about half of Cycle Length of described multilayer film, or the integral multiple of Cycle Length adds about Cycle Length half.
7. according to each multi-layer mirror in the claim 4 to 6, wherein:
The unit period structure of described superficial film group (to) number is for 10-30; With
The rete logarithm of described deep layer film layer group is the 5-50% of the rete logarithm of described superficial film group.
8. according to each multi-layer mirror in the claim 4 to 7, wherein said extra play is by silicon (Si), boron (B) and comprise silicon and one of the material of boron constitutes.
9. multi-layer mirror with reflectivity multilayer film, high refractive index layer and low-index film to the EUV ray in this reflectivity multilayer film are alternately laminated, and this multi-layer mirror comprises:
Multilayer film group on light plane of incidence side (superficial film group);
Extra play on the relative light plane of incidence side of described superficial film group; With
Multilayer film group (deep layer film layer group) on the relative light plane of incidence side of described extra play, wherein:
In the multilayer film group in described superficial film group on the plane of incidence side (first surface film layer group), low-index film is made of the material that comprises molybdenum (Mo), and high refractive index layer is made of the material that comprises silicon (Si);
In the multilayer film group on extra play side described in the described superficial film group (second surface film layer group), low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si); With
In described deep layer film layer group, low-index film is made of the material that comprises ruthenium (Ru), and high refractive index layer is made of the material that comprises silicon (Si).
10. multi-layer mirror that comprises the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes, this multi-layer mirror comprises:
Thickness is half or above insert layer of the centre wavelength of EUV ray, wherein
Have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
11. according to the multi-layer mirror of claim 10, wherein the right part of the rete of high refractive index layer and low-index film is made of two kinds of materials, another part is made of three or more material.
12. according to the multi-layer mirror of claim 10 or 11, wherein:
Described reflectivity multilayer film comprises a plurality of rete pieces, high refractive index layer H and low-index film L1 and L2 (rete) is stacked to repeating in this rete piece, this high refractive index layer and low-index film have different structure, and low-index film L1 is formed by mutual different material with L2;
Described a plurality of rete piece comprise the L1/L2/L1/H rete to stacked repeatedly rete piece and L1/H rete to stacked repeatedly rete piece; And
Rete is 1-50 to stacked number repeatedly in each rete piece.
13. according to the multi-layer mirror of claim 12, wherein the thickness of the rete that comprises of each rete centering has nothing in common with each other.
14. according to each multi-layer mirror in the claim 10 to 13, autonomous its thickness that changes in stacked each rete wherein so that will to wavelength be the reflectivity of the light of 13.1nm to 13.9nm be set at 45% or more than.
15. multi-layer mirror that comprises the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes, wherein:
Described reflectivity multilayer film comprises a plurality of rete pieces, high refractive index layer H and low-index film L1 and L2 (rete) is stacked to repeating in this rete piece, this high refractive index layer and low-index film have different structure, and low-index film L1 is formed by mutual different material with L2;
Rete piece on the base side of described multi-layer mirror by the L2/H rete to stacked formation repeatedly;
The second rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The tertiary membrane layer piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The 4th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 5th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 6th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The 7th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 8th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
Rete is 1-50 to stacked number repeatedly in each rete piece; And
Have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
16. according to the multi-layer mirror of claim 15, wherein for at least 18 degree to the reflectivity of glancing light line of the incidence angle incidents of 25 degree be 50% or more than.
17. multi-layer mirror that comprises the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes, wherein:
Described reflectivity multilayer film comprises a plurality of rete pieces, high refractive index layer H and low-index film L1 and L2 (rete) is stacked to repeating in this rete piece, this high refractive index layer and low-index film have different structure, and low-index film L1 is formed by mutual different material with L2;
Rete piece on the base side of described multi-layer mirror by the L2/H rete to stacked formation repeatedly;
The second rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The tertiary membrane layer piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The 4th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 5th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 6th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The 7th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 8th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
Rete is 1-50 to stacked number repeatedly in each rete piece; And
Have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
18. according to the multi-layer mirror of claim 17, wherein independently change the total film thickness of described reflectivity multilayer film, set the entire emission surface and have consistent reflectivity by incidence angle according to each position light on the reflecting surface.
19. according to the multi-layer mirror of claim 17 or 18, wherein the total film thickness by changing the reflectivity multilayer film in every layer the thickness ratio in keeping the reflectivity multilayer film will for be set at the reflectivity of the glancing light line of the incidence angle incident of 0-20 degree at least 50% or more than.
20. multi-layer mirror that comprises the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes, wherein:
Described reflectivity multilayer film comprises a plurality of rete pieces, high refractive index layer H and low-index film L1 and L2 (rete) is stacked to repeating in this rete piece, this high refractive index layer and low-index film have different structure, and low-index film L1 is formed by mutual different material with L2;
Rete piece on the base side of described multi-layer mirror by the L1/L2/L1/H rete to stacked formation repeatedly;
The second rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The tertiary membrane layer piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 4th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 5th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The 6th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 7th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 8th rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 9th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The tenth rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 11 rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 12 rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
And the 13 rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
Rete is 1-50 to stacked number repeatedly in each rete piece; And
Have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
21. according to the multi-layer mirror of claim 20, wherein for the reflectivity of the glancing light line of the incidence angle incident of 0-20 degree at least be 45% or more than.
22. multi-layer mirror that comprises the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes, wherein:
Described reflectivity multilayer film comprises a plurality of rete pieces, high refractive index layer H and low-index film L1 and L2 (rete) is stacked to repeating in this rete piece, this high refractive index layer and low-index film have different structure, and low-index film L1 is formed by mutual different material with L2;
Rete piece on the base side of described multi-layer mirror by the L2/H rete to stacked formation repeatedly;
The second rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The tertiary membrane layer piece that begins from substrate by the L2/H rete to stacked formation repeatedly;
The 4th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The 5th rete piece that begins from substrate by the L2/H rete to stacked formation repeatedly;
The 6th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 7th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The 8th rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 9th rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The tenth rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 11 rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
The 12 rete piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
The 13 rete piece that begins from substrate by the L1/L2/L1/H rete to stacked formation repeatedly;
The 14 rete piece that begins from substrate by the L1/H rete to stacked formation repeatedly;
Rete is 1-50 to stacked number repeatedly in each rete piece; And
Have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
23. according to the multi-layer mirror of claim 22, wherein for wavelength be the reflectivity of the light of 13.1-13.9nm be 45% or more than.
24. multi-layer mirror that comprises the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes, wherein:
Described reflectivity multilayer film comprises a plurality of rete pieces, high refractive index layer H and low-index film L1 and L2 (rete) is stacked to repeating in this rete piece, this high refractive index layer and low-index film have different structure, and low-index film L1 is formed by mutual different material with L2;
Rete piece on the base side of described multi-layer mirror is the H rete;
The second rete piece that begins from substrate by the L2/H rete to stacked formation repeatedly;
The tertiary membrane layer piece that begins from substrate by the L2/L1/H rete to stacked formation repeatedly;
Rete is 1-50 to stacked number repeatedly in each rete piece; And
Have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
25. multi-layer mirror that comprises the reflectivity multilayer film, in this reflectivity multilayer film, keep high refractive index layer and low-index film under the condition of following situation alternately stacked in substrate at Bragg's condition of reflection: for the EUV ray from the reflection ray at a plurality of interfaces of high refractive index layer and low-index film by the homophase that becomes, wherein:
One deck at least in the high refractive index layer has half or above thickness of the centre wavelength of EUV ray; And
Have the EUV beam wavelength scope of quite high EUV x ray refractive index x or ranges of incidence angles by broadening.
26. exposure sources, it forms composition by optionally shining sensitive substrate with the EUV ray, and it comprises in optical system according to each multi-layer mirror in the claim 1 to 25.
CNB2004800302491A 2003-10-15 2004-10-15 Multilayer mirror, method for manufacturing the same, and exposure equipment Expired - Fee Related CN100449690C (en)

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