CN1855380A - Chemical machinery polisher - Google Patents
Chemical machinery polisher Download PDFInfo
- Publication number
- CN1855380A CN1855380A CNA2005100254564A CN200510025456A CN1855380A CN 1855380 A CN1855380 A CN 1855380A CN A2005100254564 A CNA2005100254564 A CN A2005100254564A CN 200510025456 A CN200510025456 A CN 200510025456A CN 1855380 A CN1855380 A CN 1855380A
- Authority
- CN
- China
- Prior art keywords
- grinding
- chemical
- retaining ring
- grinding pad
- mechanical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention is for use in semiconductor fabrication and comprises: a polishing pad and a polishing head. A retaining ring is mounted on the polishing head. There are hard polishing grains on the contact surface between the retaining ring and the polishing pad. Through the friction between the retaining ring on the polishing head and the polishing pad, implements the integration of the retaining ring and the polishing pad so as to simplify the CMP (chemical mechanical polishing) equipment and to reduce production cost.
Description
Technical field
The present invention relates to a kind of semiconductor fabrication process apparatus field, especially relevant a kind of chemical-mechanical polishing mathing simple in structure.
Background technology
Owing to can provide smooth high-quality, the crystal column surface of low defective, and be considered to unique the overall situation and the technology of local planarization can be provided, chemico-mechanical polishing (CMP) technology be widely used in inter-level dielectric (interlayer dielectric, ILD), metal level such as tungsten plug, copper connecting lines, shallow trench isolation is from (shallow trench isolation, removal STI) and smooth becomes one of field with fastest developing speed in the semiconductor fabrication process.
The structure of the chemical-mechanical polishing mathing of prior art as shown in Figure 1, chemical-mechanical polishing mathing generally comprises grinding head 10, and it is arranged on the grinding pad 11, and the one end has retaining ring 12, be placed with wafer 13 in retaining ring 12, above-mentioned grinding head 10 takes retaining ring 12 to and wafer 13 rotates; On grinding pad 11, also be provided with grinding pad finishing ring 14 in addition, the 14 also rotations on grinding pad 13 of grinding pad finishing ring.In the CMP technical process, grinding head 10 (head or carrier) is carrying wafer 13 and is riding on the grinding pad 11 (CMP pad), and the lapping liquid (CMP slurry) that contains chemical reactant and abrasive grains also drips on grinding pad 11 simultaneously.Produce relative motion between wafer 13 and the grinding pad 11, by the mechanism between wafer 13 surface and grinding pad 11 and the abrasive grains, reach and lapping liquid between chemical action, reach the removal and the planarization of illuvium.
The grinding head 10 (head/carrier) of each equipment manufacturers design though difference is arranged, all use retaining ring 12 (retaining ring) wafer 13 be limited within the grinding head 10, it can not skidded off in grinding or be thrown out of because of centrifugal action.In some designs as Material Used (Applied Materials Corp.) ' Titan Profiler ' grinding head 10, retaining ring can also play the effect of regulating wafer 13 edge grinding speed.
The influence of 11 pairs of CMP technologies of grinding pad is very big, it not only takes advantage of load that pressure is applied to the task on wafer 13 surfaces equably, also plays the effect that chemical reactant and abrasive grains are transferred to wafer 13 surfaces and byproduct of reaction and the material that grinds are taken away.Grinding pad more than 11 is made by polymerization macromolecule material such as polyurethanes, also may introduce polymer fiber or aperture in the mill to change the hardness (hardness) that its structure reaches to be needed, surface roughness (surface roughness), compressibility (compressibility) etc.Grinding pad 11 can be run through a little holes or be depicted groove on the surface usually, to improve the ability of its maintenance and transportation lapping liquid.
Through a certain amount of grinding, the characteristic of grinding pad 11 especially its surface characteristic can change.Polished even glazing (glazing) as the surface, hole is by abrasive grains filling etc.These all can make grinding pad 11 lose the ability that keeps lapping liquid, cause grinding rate to descend, and evenness reduces, even 13 surface generations scratch to wafer.During so actual production crosses, generally use grinding pad finishing ring 14 (pad conditioning ring) (or dish) the friction grinding pad surface that the surface is embedded with diamond particles, make it recover roughness, improve and to hold the ability of lapping liquid, thereby keep grinding rate and prolong useful life of grinding pad.This grinding pad reparation (pad conditioning) can be and grinding wafer carries out (in-situ conditioning) simultaneously carry out (ex-situconditioning) between wafer 13 grinds.
Though set-up mode of the prior art also can be finished the purpose of grinding, yet, because retaining ring and finishing ring split setting, so it all needs independent mechanical wall and corresponding Mechatronic Systems, must cause its structure comparatively complicated, occur easily damaging, and when changing inconvenient operation.In addition, the finishing ring also will carry out work when retaining ring is rotated work, must need bigger space to hold the said equipment, the area on the grinding chassis of chemical-mechanical polishing mathing and the size of grinding pad also can be bigger, so the also inevitable corresponding meeting of the floor space of chemical-mechanical polishing mathing is big.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of chemical-mechanical polishing mathing is provided, it has simple structure, and is easy to operate, and floor space is also little.
The object of the present invention is achieved like this: a kind of chemical-mechanical polishing mathing, comprise grinding pad and grinding head, and retaining ring is installed on the grinding head, have the hard abrasive grains on the surface that contacts on above-mentioned retaining ring and the grinding pad.
Compared with prior art, the invention has the beneficial effects as follows: simplified CMP equipment greatly, the originally independent mechanical arm of grinding pad correction needs and Mechatronic Systems accordingly, can reduce fully now, reduced the floor space (footprint) of CMP equipment, when the design chemical-mechanical polishing mathing, can dwindle and grind chassis area and grinding pad size, saved processes expend product expense, reduced because of changing the required plant maintenance time of running stores.
Description of drawings
Fig. 1 is the structural representation of the chemical-mechanical polishing mathing of prior art, only shows grinding head, grinding pad and grinding pad finishing ring among the figure, comprises and facing and vertical view.
Fig. 2 is the structural representation of chemical-mechanical polishing mathing of the present invention, only shows the structure of grinding head and grinding pad among the figure.
Fig. 3 is the zoomed-in view of circle part among Fig. 2, in order to the position that is provided with of explanation retaining ring below diamond particles.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described.
See also shown in Figure 2ly, chemical-mechanical polishing mathing of the present invention comprises grinding head 20, and it is arranged on the grinding pad 21, and grinding pad 21 is arranged at and grinds on the chassis 24.One end of above-mentioned grinding head 20 has retaining ring 22, has wafer 23 in retaining ring 22, and above-mentioned grinding head 20 takes retaining ring 22 to and wafer 23 rotates; In the CMP technical process, grinding head 20 (head or carrier) is carrying wafer 23 and is riding on the grinding pad 21 (CMP pad), and the lapping liquid (CMP slurry) that contains chemical reactant and abrasive grains also drips on grinding pad 21 simultaneously.Produce relative motion between wafer 23 and the grinding pad 21, by the mechanism between wafer 23 surface and grinding pad 21 and the abrasive grains, reach and lapping liquid between chemical action, reach the removal and the planarization of illuvium.
See also Fig. 2 and shown in Figure 3, be provided with wafer 23 in retaining ring 22, its below has a large amount of hard abrasive grains 25, and hard abrasive grains 25 is a diamond particles in the present invention.In the CMP technical process, above-mentioned diamond particles grinding pad 21 surfaces that can rub make it recover roughness, improve and hold the ability of lapping liquid, thereby keep grinding rate and prolong useful life of grinding pad 21.
In sum, the present invention has finished inventor's goal of the invention, simplified CMP equipment greatly, originally the independent mechanical arm of grinding pad correction needs and corresponding Mechatronic Systems can reduce now fully, have reduced the floor space (footprint) of CMP equipment, when the design chemical-mechanical polishing mathing, can dwindle and grind chassis area and grinding pad size, save processes expend product expense, reduce because of changing the required plant maintenance time of running stores.
Claims (5)
1. a chemical-mechanical polishing mathing comprises grinding pad and grinding head, and retaining ring is installed on the grinding head, it is characterized in that: have the hard abrasive grains on above-mentioned retaining ring and the surface that grinding pad contacts.
2. chemical-mechanical polishing mathing as claimed in claim 1 is characterized in that: described hard abrasive grains is a diamond particles.
3. chemical-mechanical polishing mathing as claimed in claim 1 is characterized in that: place wafer in the described retaining ring.
4. chemical-mechanical polishing mathing as claimed in claim 1 is characterized in that: have lapping liquid on the described grinding pad.
5. chemical-mechanical polishing mathing as claimed in claim 4 is characterized in that: described lapping liquid comprises chemical reactant and abrasive grains.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100254564A CN1855380A (en) | 2005-04-27 | 2005-04-27 | Chemical machinery polisher |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100254564A CN1855380A (en) | 2005-04-27 | 2005-04-27 | Chemical machinery polisher |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1855380A true CN1855380A (en) | 2006-11-01 |
Family
ID=37195433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100254564A Pending CN1855380A (en) | 2005-04-27 | 2005-04-27 | Chemical machinery polisher |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1855380A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102554771A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Chip positioning device of grinding head |
| CN102729144A (en) * | 2012-04-06 | 2012-10-17 | 浙江工业大学 | Milling processing device with substitute |
| CN107953242A (en) * | 2017-12-22 | 2018-04-24 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Color-buffing finish device and polishing system |
| CN108145593A (en) * | 2017-12-28 | 2018-06-12 | 德淮半导体有限公司 | Wafer processing apparatus and its method of work |
| CN110549242A (en) * | 2018-05-31 | 2019-12-10 | 许栋梁 | Omnidirectional integrated regulating device |
-
2005
- 2005-04-27 CN CNA2005100254564A patent/CN1855380A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102554771A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Chip positioning device of grinding head |
| CN102729144A (en) * | 2012-04-06 | 2012-10-17 | 浙江工业大学 | Milling processing device with substitute |
| CN102729144B (en) * | 2012-04-06 | 2014-08-06 | 浙江工业大学 | Milling processing device with substitute |
| CN107953242A (en) * | 2017-12-22 | 2018-04-24 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Color-buffing finish device and polishing system |
| CN108145593A (en) * | 2017-12-28 | 2018-06-12 | 德淮半导体有限公司 | Wafer processing apparatus and its method of work |
| CN110549242A (en) * | 2018-05-31 | 2019-12-10 | 许栋梁 | Omnidirectional integrated regulating device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9211631B2 (en) | Grinding wheel truing tool and manufacturing method thereof, and truing apparatus, method for manufacturing grinding wheel and wafer edge grinding apparatus using the same | |
| US7371156B2 (en) | Off-line tool for breaking in multiple pad conditioning disks used in a chemical mechanical polishing system | |
| KR100315722B1 (en) | Polishing machine for flattening substrate surface | |
| KR100567981B1 (en) | Polishing grinding wheel and substrate polishing method with this grinding wheel | |
| US7578727B2 (en) | Conditioner device for conditioning polishing pad and chemical mechanical polishing apparatus including the same | |
| KR20100074044A (en) | High-rate groove pattern | |
| US6394886B1 (en) | Conformal disk holder for CMP pad conditioner | |
| US20030054735A1 (en) | Pad for chemical mechanical polishing | |
| CN203245721U (en) | Grinding adjusting device and chemical-mechanical grinding device | |
| CN1855380A (en) | Chemical machinery polisher | |
| CN112476227A (en) | Chemical mechanical polishing device | |
| US6390902B1 (en) | Multi-conditioner arrangement of a CMP system | |
| US10974366B2 (en) | Conditioning wheel for polishing pads | |
| US20020164939A1 (en) | Quick coupler for mounting a rotational disk | |
| CN101116953A (en) | Chemical mechanism grinding and finishing device | |
| US7097545B2 (en) | Polishing pad conditioner and chemical mechanical polishing apparatus having the same | |
| CN111515863A (en) | Polishing method and polishing pad dressing system | |
| US7404757B2 (en) | Apparatus and method for breaking in multiple pad conditioning disks for use in a chemical mechanical polishing system | |
| US6769972B1 (en) | CMP polishing unit with gear-driven conditioning disk drive transmission | |
| KR100506814B1 (en) | Apparatus for polishing a wafer | |
| US6439981B1 (en) | Arrangement and method for polishing a surface of a semiconductor wafer | |
| KR20070078439A (en) | Polishing pad conditioner and chemical and mechanical polishing apparatus having the same | |
| US7223157B2 (en) | Chemical-mechanical polishing apparatus and method of conditioning polishing pad | |
| WO2010044953A1 (en) | Polishing pad edge extension | |
| KR100342866B1 (en) | Method For Conditioning The Polishing Pad |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |