CN1832982B - Photosensitive silsesquioxane resin - Google Patents

Photosensitive silsesquioxane resin Download PDF

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Publication number
CN1832982B
CN1832982B CN200480015054XA CN200480015054A CN1832982B CN 1832982 B CN1832982 B CN 1832982B CN 200480015054X A CN200480015054X A CN 200480015054XA CN 200480015054 A CN200480015054 A CN 200480015054A CN 1832982 B CN1832982 B CN 1832982B
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value
silsesquioxane resins
corrosion
formula
resins according
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CN1832982A (en
Inventor
胡三林
艾瑞克·史考特·穆耶
王盛
戴维·李·怀曼
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Dow Silicones Corp
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Dow Corning Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)

Abstract

This invention pertains to a silsesquioxane resin with improved lithographic properties (such as etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist; a method for incorporating the fluorinated or non-fluorinated functional groups onto silsesquioxane backbone. The silsesquioxane resins of this invention has the general structure (HSiO3/2)a(RSiO3/2)b wherein; R is an acid dissociable group, a has a value of 0.2 to 0.9 and b has a value of 0.1 to 0.8 and 0.9 <= a+b <= 1.0.

Description

The photosensitivity silsesquioxane resins
Technical field
Do not have
Background technology
For epoch, use the lithography of 157nm F2 laser apparatus to occur rapidly for back 193nm as a kind of feasible technology.In fact, it can become the choice of technology that is used for 100 to 70nm nodes.Yet the existing photoresist of the great majority of Shi Yonging has the intensive absorption at 157nm wavelength place now.Some fluorocarbon polymer and the silicon-containing polymer that comprises silsesquioxane have demonstrated the high transparent at the 157nm place.
Being used for a kind of key chemicals that IC makes is photoresist (PR), and it is a kind of photosensitive polymer, when suitably exposing and developing, its can hide the part substrate and with high integrity with the IC design transfer.Building faster and littler treater needs to satisfy the resist of more being strict with, and these requirements are: high transparent; Thinner film; Better adhesive power; Higher etching resistence and thermostability; Photo-induced faster susceptibility.Yet because most of known photoresists, water, oxygen and simple hydrocarbons strong absorption all in spectral range, therefore the design and the exploitation of described material are great challenges.
Because the unique texture of hydrogen silsesquioxane (HSQ) and the high-content of Si-H key, it is significantly transparent at 193nm and 157nm place.(by Dow Corning commercialization, commodity are called FOX to HSQ
Figure G04815054X20080121D000011
) being used as spin-coating low k dielectric widely, it has had some as the required feature of good photoresist, for example film quality, heat and mechanical characteristics.It is also believed that in alkali aqueous solution (as the tetramethyl ammonium hydroxide (TMAH) in the photographic developer that generally uses), the Si-H key changes alkali-soluble Si-OH half family rapidly into.Yet as possible, directly the unstable functional group of any acid being incorporated on the HSQ main chain so that HSQ can be used as photoresist is unusual difficulty.
Summary of the invention
The present invention relates to a kind of functionalization silsesquioxane resins with high Si content and improved characteristics (for example high etching resistence and high transparent), it is suitable as photoresist and is used for using with the microplate printing under other wavelength at 193nm and 157nm; Relating to a kind of being used for will fluoridize or nonfluorinated functional group is incorporated in method on the silsesquioxane main chain.Silsesquioxane resins of the present invention has (HSiO 3/2) a(RSiO 3/2) bUniversal architecture, wherein: R is the acid base that can dissociate, a value be 0.2 to 0.9 and the b value be 0.1 to 0.8 and 0.9≤a+b≤1.0.Perhaps a value be 0.4 to 0.8 and the b value be 0.2 to 0.6.We believe, because the high-content of SiH in the resin, this resist is at 193nm and 157nm more transparent (low OD) and have higher sensitivity of light, and owing to the high-content (up to 40 weight %) of Si in the resin and the Si-O key in the main chain, the resist that therefore comprises silsesquioxane resins of the present invention has good etching resistence and low (or nothing) outgassing.
The present invention also relates to have general formula (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) cSilsesquioxane resins, wherein R, a and b are as mentioned above and R 1Be selected from H or straight or branched C 1To C 6Alkyl and c value are 0.01 to 0.4, perhaps are 0.05 to 0.15 and 0.9≤a+b+c≤1.0.We believe when using resin as resist, HSi (OR 1) O 2/2The adhesive power of unitary existence meeting modified resin and substrate.
The present invention also relates to have general formula (HSiO 3/2) a(RSiO 3/2) b(Si (OR 1) xO (4-x)/2) dSilsesquioxane resins, wherein R, R 1, a and b as mentioned above, the d value is 0.05 to 0.45, perhaps is 0.1 to 0.25,0.9≤a+b+d≤1.0, and the x value is 0 to 3.We believe Si (OR 1) xO (4-x)/2Therefore unitary existence can strengthen the thermostability of resin and higher Tg is provided, and improves the resolving power, contrast gradient, line edge roughness (LER) etc. of resist.
The present invention also relates to have universal architecture (HSiO 3/2) a(RSiO 3/2) b(R 2SiO 3/2) eSilsesquioxane resins, wherein R, a and b as previously mentioned, R 2Be modification functional group, the e value is 0.01 to 0.25, perhaps is 0.05 to 0.15 and 0.9≤a+b+e≤1.0.R 2Base is used for the characteristic of Change Example such as adhesive power or Tg.
The present invention also relates to have universal architecture (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(R 2SiO 3/2) eSilsesquioxane resins, wherein R, R 1, R 2, a, b, c and e as mentioned above and 0.9≤a+b+c+e≤1.0.
The present invention also relates to have universal architecture (HSiO 3/2) a(RSiO 3/2) b(Si (OR 1) xO (4-x)/2) d(R 2SiO 3/2) eSilsesquioxane resins, wherein R, R 1, R 2, a, b, d and e as mentioned above and 0.9≤a+b+d+e≤1.0.
The present invention also relates to have universal architecture (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(Si (OR 1) xO (4-x)/2) dSilsesquioxane resins, wherein R, R 1, a, b, c, d and x as mentioned above and 0.9≤a+b+c+d≤1.0.
The present invention also relates to have universal architecture (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(Si (OR 1) xO (4-x)/2) d(R 2SiO 3/2) eSilsesquioxane resins, wherein R, R 1, R 2, a, b, c, d, e and x as mentioned above and 0.9≤a+b+c+d+e≤1.0.
The present invention also relates to have universal architecture (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(Si (OR 1) xO (4-x)/2) d(R 2SiO 3/2) e(SiO 4/2) fSilsesquioxane resins, 0.0≤f≤0.20 wherein; R, R 1, a, b, c, d, e and x as mentioned above and 0.9≤a+b+c+d+e+f≤1.0.
Silsesquioxane resins of the present invention is highly transparent under low wavelength not only; and satisfied numerous other requirements for positive corrosion-resisting agent, for example superior etching resistence, adhesive power, thermostability, chemistry expansion property, the buck solvability after light goes to protect etc. to wide windowhood method with different substrate.
Silsesquioxane resins of the present invention contains HSiO 3/2Unit and RSiO 3/2The unit, wherein R is the acid base that can dissociate." acid can dissociate base " refers to usable acid, especially photogenerated acid (PAG) cracked molecule half family.The acid base that can dissociate is known and describe to some extent in No. the 2002/0090572nd, No. the 1142928th, European patent application for example and U.S. Patent Application Publication case in this technology, because its teaching that can dissociate base to acid, so be incorporated herein by reference.In particular, this acid base (R) that can dissociate can be described by following formula:
Figure G04815054X20080121D000031
Each R wherein 3Independently for connecting base;
R 4It is the second connection base;
L is selected from the group that is made up of following each group: the alkarylene that has the straight or branched alkylidene group of 1 to 10 carbon atom, the fluoro alkylidene group with 2 to 20 carbon atoms, the arylidene that is substituted or is unsubstituted, the cycloalkylidene that is substituted or is unsubstituted and be substituted or be unsubstituted;
R 5Be hydrogen, straight or branched alkyl or fluoro-alkyl;
R 6Be alkyl or fluoro-alkyl;
Z is sour cleavable base;
The g value can be 0 or 1;
The h value can be described 0 or 1; And
The k value can be described 0 or 1.
Each R 3Example can be (but being not limited to) alkylidene group, for example methylene radical and ethylidene.
R 4Example can be cycloalkylidene, fluoro alkylidene group and the aryl of (but being not limited to) straight or branched alkylidene group, for example norcamphyl or cyclohexylidene.
The example of L can be (but being not limited to) and is substituted (for example fluoridizing) and is unsubstituted methylene radical, ethylidene, norbornylene, cycloalkylidene and alkarylene half family.
R 5Example can be the C of (but being not limited to) hydrogen, for example methyl and ethyl 1To C 6Alkyl and for example trifluoromethyl, 2,2,2-trifluoroethyl and 3,3, the C of 3-trifluoromethyl 1To C 6Fluoro-alkyl.
R 6Example can be (but being not limited to) for example C of methyl and ethyl 1To C 6Alkyl and for example trifluoromethyl, 2,2,2-trifluoroethyl and 3,3, the C of 3-trifluoromethyl 1To C 6Fluoro-alkyl.
The example of Z can be (but being not limited to)-OH ,-COOH, have formula-COOR 7Ester, have formula-OCOOR 8Carbonic ether, have formula-OR 9Ether, wherein select R 7, R 8And R 9And make functional group acid cleavable.
At the acid base-COOR that can dissociate 7In, R 7Can be for example tertiary alkyl of the tertiary butyl, have the ring-type or alicyclic substituting group (the general C of the 3rd tie point 7-C 12), for example adamantyl, norcamphyl, isobornyl, 2-methyl-2-adamantyl, 2-methyl-2-isobornyl, 2-butyl-2-adamantyl, 2-propyl group-2-isobornyl, 2-methyl-2-tetracyclododecane base, 2-methyl-2-dihydro dicyclopentadienyl-ring-hexyl, 1-methylcyclopentyl or 1-methylcyclohexyl, or 2-trialkylsilanyl ethyl, for example 2-TMS ethyl or 2-triethyl silyl ethyl.
Has formula-OCOOR 8Acid dimethyl ester can dissociate the base example can be-the O-tert-butoxycarbonyl (is R 8Be the tertiary butyl).Has formula-OR 9Ether acid can dissociate that to can be THP trtrahydropyranyl ether (be R for the example of base 9Be THP trtrahydropyranyl) and trialkylsilanyl ether (be R 9Be trialkylsilanyl, for example TMS).
Typical Z base is organic ester group, and it experiences scission reaction to produce the carboxylic acid group in the presence of photogenerated acid.
Can the dissociate example of basic R of acid can be 1 of (but being not limited to) norbornane, 1-dimethyl ethyl, sec.-propyl, 2-methyl adamantane base, 2-ethyl adamantyl, cyclohexyl ester and 2-hydroxyl-3-pinane base or tertiary butyl ester and other.
Remove (HSiO 3/2) and (RSiO 3/2) outside the unit, described silsesquioxane resins can contain HSi (OR in addition 1) O 2/2Unit, or Si (OR 1) xO (4-x)/2Unit, or (R 2SiO 3/2) or (SiO 4/2) unit or these unitary combinations, be used to strengthen the performance of this silsesquioxane resins.In these unit, each R 1Independently be selected from H or C 1To C 6Alkyl.R 1Example can be (but being not limited to) methyl, ethyl, propyl group, butyl, the tertiary butyl and other.R 1Be generally H or methyl.R 2Be selected from by having following structure-R 21R 22The group of half group composition, R wherein 22Be generally-OH or-COOH, or base-soluble moiety, and R 21For being substituted and/or being unsubstituted C 1To C 12(straight chain, side chain or ring-type) alkyl half family.R 2Example can be (but being not limited to) dicyclo [2,2,1] heptan-5-alkene-2-(1,1,1-three fluoro-2-trifluoromethyl propan-2-ols; 2-trifluoromethyl dicyclo [2,2,1] heptan-5-alkene-2-alcohol, 3,3,3-trifluoro propan-2-ol; With 2-trifluoromethyl-3,3-two fluoro-dicyclos [2,2,1] heptan-5-alkene-2-alcohol.
In all unit in this silsesquioxane resins, this silsesquioxane resins generally contains the HSi (OR of 5 to 40 moles of % 1) O 2/2Unit and be more generally 5 to 15 moles of %.In addition, in all unit in this silsesquioxane resins, this silsesquioxane resins can contain the Si (OR of 5 to 45 moles of % 1) xO (4-x)/2Unit and be more generally 10 to 25 moles of %.In addition, in all unit in this silsesquioxane resins, this silsesquioxane resins can contain (the R of 0 to 25 mole of % 2SiO 3/2) unit and be more generally 5 to 15 moles of %.
The example of this silsesquioxane resins can be (but being not limited to):
(HSiO 3/2) a(RSiO 3/2) b, wherein R be the tertiary butyl ester of sec.-propyl, 2-methyl adamantane base, cyclohexyl and 2-hydroxyl-3-pinane base or norbornane and a value be 0.2 to 0.9 and the b value be 0.1 to 0.8;
(HSiO 3/2) a(RSiO 3/2) b(R 1OSiO 3/2) c(SiO 4/2) f, wherein R is sec.-propyl, 2-methyl adamantane base, cyclohexyl, 2-hydroxyl-3-pinane base or tertiary butyl dicyclo [2,2,1] heptane-2-carboxylicesters; R 1Be H; The a value is 0.3 to 0.7, and the b value is 0.2 to 0.50, the c value be 0.05 to 0.2 and the f value be 0.01 to 0.1.
(HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(Si (OR 1) xO (4-x)/2) d(R 2SiO 3/2) e, wherein R is sec.-propyl, 2-methyl adamantane base, cyclohexyl and 2-hydroxyl-3-pinane base or tertiary butyl dicyclo [2,2,1] heptane-2-carboxylicesters; R 1Be H; R 2Be selected from dicyclo [2,2,1] heptan-5-alkene-2-(1,1,1-three fluoro-2-trifluoromethyl propan-2-ols, 2-trifluoromethyl dicyclo [2,2,1] heptan-5-alkene-2-alcohol, 3,3,3-trifluoro propan-2-ol, 2-trifluoromethyl-3,3-two fluoro-dicyclos [2,2,1] heptan-5-alkene-2-alcohol; The a value is 0.4 to 0.6, and the b value is 0.2 to 0.45, and the c value is 0.05 to 0.20, the d value be 0.01 to 0.15 and the e value be 0.01 to 0.25.
Silsesquioxane resins of the present invention can pass through will
(A) has formula (HSiO 3/2) m(HSi (OR 1) O 2/2) n(Si (OR 1) xO (4-x)/2) pHydrogen silsesquioxane resin, wherein the m value is 0.7 to 1.0, be generally 0.8 to 0.9 and the n value be 0 to 0.4, be generally 0.05 to 0.3, the p value is 0 to 0.45 and 0.9≤m+n+p≤1.0, be generally m+n+p ≈ 1.0 with
(B) acid can be dissociated basic precursor reaction to produce
(C) has general formula (HSiO 3/2) M1(RSiO 3/2) M2(HSi (OR 1) O 2/2) n(Si (OR 1) xO (4-x)/2) pSilsesquioxane resins, R wherein 1, n, p and x as previously mentioned, R is the acid base that can dissociate; The m2 value is 0.1 to 0.6, is generally 0.2 to 0.4; And m1+m2 ≈ m.
The method that is used for preparing hydrogen silsesquioxane resin (A) is known in this technology.A kind of method comprises hydrolysis trihalosilane (for example trichlorosilane) or trialkoxy silane (for example triethoxyl silane).Be used to prepare hydrogen silsesquioxane resin method can referring to but be not limited to authorize people's such as Collins United States Patent (USP) the 3rd, 615, No. 272, authorize people's such as Bank United States Patent (USP) the 5th, 010, No. 159, authorize people's such as Frye United States Patent (USP) the 4th, 999, No. 397, authorize people's such as Carpenter United States Patent (USP) the 6th, those methods described in the open case of No. the 10/060558th, U.S. patent application case of submitting on January 30th, 353, No. 074 1 and Japanese Patent 59-178749 number, 60-86017 number and 63-107122 number.
Make hydrogen silsesquioxane resin and (B) the acid group precursor reaction of can dissociating.A kind of can dissociate method of group precursor reaction of hydrogen silsesquioxane resin and acid that makes comprises catalytic hydrosilylation acid can dissociate group precursor and hydrogen silsesquioxane resin.
The example of the sour group precursor that can dissociate is tertiary butyl ester, 2-trifluoromethyl acrylate tertiary butyl ester, methacrylic acid tertiary butyl ester, the carboxylic acid dicyclo [2 of (but being not limited to) norbornylene, 2,1] heptan-5-alkene-2-tertiary butyl ester, suitable-5-norbornylene-2,3-dicarboxylic anhydride and other.Generally speaking, can the dissociate addition of group precursor of acid should provide the RSiO that accounts for all unitary 5 to 60 moles of % in the silsesquioxane resins or 15 to 40 moles of % in silsesquioxane resins 3/2The unit.
Hydrosilylation catalysts has been known for us in this technology and the example is the compound of (but not limitting dried) platiniferous or nickeliferous or rhodium-containing.The platiniferous examples for compounds comprises H 2PtCl 6, two-μ .-carbonyl diurethane-. π .-cyclopentadienyl two nickel, platinum-carbonylcomplex, platinum-divinyl tetramethyl disiloxane complex compound, platinum loop vinyl methylsiloxane complex compound and Acetyl Acetone acid platinum (acac).Rhodium-containing compound-example is Rh (acac) 2(CO) 2And an example of nickel compound containing is Ni (acac) 2The amount of employed hydrosilylation catalysts is generally 10 to 10,000ppm or 100 to 1,000ppm in the amount of reactant (be hydrogen silsesquioxane resin and acid can dissociate group precursor).
Although can use heating or pressure to be beneficial to reaction, the reaction that hydrogen silsesquioxane resin and acid can be dissociated between the group precursor is generally carried out under room temperature and constant pressure.
The reaction that hydrogen silsesquioxane resin and acid can be dissociated between the basic precursor is generally carried out in the presence of solvent.The example of this solvent is (but being not limited to) alcohols, for example ethanol or Virahol; Aromatic hydrocarbons, for example benzene or toluene; Alkanes, for example normal heptane, dodecane or nonane; Ketone, for example methyl iso-butyl ketone (MIBK); The ester class; Glycol ethers; Type siloxane, for example cyclic dimethyl polysiloxane and straight chain dimethyl polysiloxane (for example hexamethyldisiloxane, octamethyltrisiloxane and its mixture); Cellosolvo, methyl proxitol acetate (PGMEA), pimelinketone and 1,2-diethoxyethane and other.The general methyl iso-butyl ketone (MIBK) of using.This solvent can with the solvent phase that is used to produce hydrogen silsesquioxane resin with.
The reaction that hydrogen silsesquioxane resin and acid can be dissociated between the basic precursor is generally carried out in be enough to make all acid substantially to dissociate time that basic precursor and hydrogen silsesquioxane resin react.Yet, reaction can be prolonged for some time, from 40 ℃ of reflux temperatures (" multiviscosisty step ") that are heated to solvent for molecular weight that increases silsesquioxane resins and/or the storage stability of improveing silsesquioxane resins.The multiviscosisty step can be carried out afterwards or carry out as the part of reactions steps (b) in reactions steps (b).Carry out 30 minutes to 36 hours for some time in the scope as the multiviscosisty step 1, be preferably 1 to 6 hour.
Contain R 2SiO 3/2Unitary silsesquioxane resins can be by preparing hydrogen silsesquioxane resin (A) or silsesquioxane resins (C) with the functional group precursor reaction.General hydrogen silsesquioxane resin or silsesquioxane resins are reacted with functional group precursor by catalytic hydrosilylation functional group precursor and hydrogen silsesquioxane resin or silsesquioxane resins.Use with above-mentioned can dissociate the catalytic hydrosilylation between the basic precursor of hydrogen silsesquioxane resin and acid that is used for and react same or analogous process condition and carry out this catalytic hydrosilylation and react.
In one approach, hydrogen silsesquioxane resin (A) and functional group precursor reaction can be had formula (HSiO with generation 3/2) M1(R 2SiO 3/2) M3(HSi (OR 1) O 2/2) n(Si (OR 1) xO (4-x)/2) pResin, R wherein 1, n, p and x as previously mentioned, R 2Be modification functional group, the m3 value is 0.01 to 0.25, is generally 0.05 to 0.15; And m1+m3 ≈ m.The basic precursor that then this resin and acid can be dissociated reacts and has formula (HSiO with generation 3/2) M1(RSiO 3/2) M2(R 2SiO 3/2) M3(HSi (OR 1) O 2/2) n(Si (OR 1) xO (4-x)/2) pResin, wherein R, R 1, R 2, n, p, m1, m2 and m3 and x as previously mentioned, m1+m2+m3 ≈ m.In a kind of alternative method, silsesquioxane resins (C) and functional group precursor reaction then can be had formula (HSiO with the water reaction with generation 3/2) M1(RSiO 3/2) M2(R 2SiO 3/2) M3(HSi (OR 1) O 2/2) n(Si (OR 1) xO (4-x)/2) p(SiO 4/2) fResin, wherein R, R 1, R 2, n, p, m1, m2 and m3 and x as previously mentioned, m1+m2+m3 ≈ m.In a kind of alternative method, hydrogen silsesquioxane resin (A) and the mixture reaction that comprises functional group precursor and the sour basic precursor that can dissociate can be had formula (HSiO with generation 3/2) M1(RSiO 3/2) M2(R 2SiO 3/2) M3(HSi (OR 1) O 2/2) n(Si (OR 1) xO (4-x)/2) pResin, wherein R, R 1, R 2, n, p, m1, m2 and m3 and x as previously mentioned, m1+m2+m3 ≈ m.In a typical method, with can dissociate basic precursor reaction and silsesquioxane resins and functional group precursor reacted of hydrogen silsesquioxane resin and acid.
Another embodiment of the present invention is a kind of Photoresisting agent composition, and it comprises (A) silsesquioxane resins described herein and (B) acidogenic agent.This photoresist can be the form of negativity or positivity photoresist and can have other components and additive.Exist in this Photoresisting agent composition in solid up to the silsesquioxane resins of 99.5 weight % and generally there is acidogenic agent in the solid 0.5-10 weight % that contains in this composition.This Photoresisting agent composition can be the form of negativity or positivity photoresist and also can have other components and additive.
Acidogenic agent is to be acidic compound once being exposed under the radiation.This acid can cause that then the base that can dissociate of the acid in the silsesquioxane resins dissociates.Acidogenic agent is known by us in this technology and is for example being described to some extent among EP 1 142 928 A1.The example of acidogenic agent can be (but being not limited to) salt, halogen contained compound class, diazo ketone compounds, sulphones class, sulfonate and other.
The example of salt comprise (but be not limited to) Iodonium salt, the sulfonium salt class (comprises tetramethylene sulfide salt), phosphonium salt class, diazols and pyrrole ingot salt.
The example of halogen contained compound class includes, but is not limited to Halogen alkyl hydrocarbon compounds, Halogen alkyl heterocycles class and other.
The example of diazo ketone compounds includes, but is not limited to 1,3-diketo-2-diazonium compound class, diazobenzene naphtoquinone compounds class, diazo-naphthalene-based naphtoquinone compounds class and other.
The example of sulphones class includes, but is not limited to the α-diazonium compound of beta-keto sulfone, 'Beta '-sulfonyl sulfone, these compounds and other.
The example of sulfonate includes, but is not limited to alkylsulfonate, alkylimide sulfonate, alkylhalide group sulfonate, arylsulphonate, imino-sulfonate and other.
Acidogenic agent (b) can use separately or two or more is used in combination.Preferred acid generators is a sulfonated salts, especially for having the anionic sulfonated salts of perfluorinated methide.
In this Photoresisting agent composition, can use other additives.For example, if this photoresist is the positivity photoresist, then this Photoresisting agent composition can comprise sour diffusion control agent, tensio-active agent, dissolution inhibitor, linking agent, sensitizer, halation inhibitor, tackifier, storage-stable agent, defoamer, coating additive and softening agent and other.The summation of all additives (not comprising acidogenic agent) is generally less than solid included in the Photoresisting agent composition 20%, perhaps less than 5%.
Photoresisting agent composition generally provides in solvent.Choice of Solvent is subjected to many controlling factors, for example the solubleness of silsesquioxane resins and acidogenic agent and compatibility, coating process and safety and environment rules.Typical solvent comprises and contains ether, contains ester, hydroxyl and contain the ketone compound class.The example of solvent includes, but is not limited to cyclopentanone, pimelinketone, lactate (for example ethyl lactate), alkylene glycol alkyl ether acetate (for example methyl proxitol acetate), alkylene glycol mono alkyl ester (for example methylcyclohexane), butylacetate, cellosolvo and 3-ethoxyl ethyl propionate.The solvent that is used for silsesquioxane resins generally comprises (but being not limited to) cyclopentanone (CP), methyl proxitol acetate (PGMEA), ethyl lactate (EL), methyl iso-butyl ketone (MIBK) (MIBK), methyl ethyl ketone (MEK), 3-ethoxyl ethyl propionate, 2-heptanone or methyl-n-amyl ketone (MAK) and/or any its mixture.
Generally with 50 to 99.5 weight % of total Photoresisting agent composition (i.e. (A), (B), additive and solvent), perhaps 80 to 95 weight % exist the amount of solvent.
Another embodiment of the present invention is a kind of method that is used for producing the resist pattern picture on substrate.This method comprises following steps: (a) with film coated one substrate that comprises Photoresisting agent composition of the present invention; (b) described film is become image be exposed under the radiation to produce exposed film; (c) described exposed film is developed to produce image.
Step (a) comprises with the resist film coated substrate that comprises Photoresisting agent composition.Photoresisting agent composition generally provides in solvent so that coating process.Suitable substrate is pottery, metal or semiconductor substrate, and preferable substrate is for containing silicon substrate, and it comprises for example silicon-dioxide, silicon nitride, silicon oxynitride, silicon carbide and silicon oxide carbide substrate.Before the deposition Photoresisting agent composition, available or need not organic or antireflection bed course coated substrates.Perhaps can use double layer substrate, Photoresisting agent composition wherein of the present invention forms top photoresist layer (being imaging layer) on double layer substrate, and this double layer substrate is made of base layer and the bed course between top photoresist layer and base layer.The base layer of double layer substrate is made of suitable baseplate material, and the bed course of double layer substrate is made of high absorption under imaging wavelength and the material compatible with imaging layer.Known bed course comprises crosslinked polycarboxylated styrene, polyester, polyacrylate(s), fluorinated polymer class, cyclic olefin polymer class and analogue thereof, comprises diazo naphthoquinones (DNQ)/phenolic varnish anticorrosive additive material.
Surface through coating or uncoated, individual layer or double layer substrate generally is to clean by standard procedure before resist thin film deposition thereon.Can use in this technology known technology with the resist film coated on substrate, for example spin coating or spraying, or blade is scraped and smeared.Generally with the resist film before the resist film is exposed to radiation, make its drying by being heated to one period short period of time of 30 ℃ to the 200 ℃ temperature experience in the scope (for example 20 to 90 seconds, general about 1.0 minutes).The dry film of gained has 0.01 to 5.0 micron thickness, perhaps is 0.02 to 2.5 micron, perhaps 0.05 to 1.0 micron and or 0.10 to 0.20 micron.
Then become image to be exposed under the radiation resist film, promptly under UV, X-ray, electron beam and EUV or its analogue.Ultraviolet radiation or use that general use has 157nm to 365nm wavelength have the ultraviolet radiation of 157nm or 193nm wavelength.Suitable source of radiation comprises mercury, mercury/xenon and xenon lamp.Preferred source of radiation is KrF excimer laser or F 2Excimer laser.When using the radiation of longer wavelength (for example 365nm), suggestion is added in the Photoresisting agent composition absorption with enhanced rad with sensitizer.Generally use less than 100mJ/cm 2Radiation, perhaps use less than 50mJ/cm 2Radiation reach the exposure fully of Photoresisting agent composition.
Once being exposed to radiation, radiation is promptly absorbed to produce free acid by the acidogenic agent in the Photoresisting agent composition.When Photoresisting agent composition was the positivity photoresist, once heating, free acid caused that promptly the acid that is present on the silsesquioxane resins basic capsule that can dissociate separates.When Photoresisting agent composition was the negativity photoresist, free acid can cause linking agent and silsesquioxane resins reaction, and therefore the photoresist of formation exposure can not dissolve the zone.After Photoresisting agent composition is exposed under the radiation, generally Photoresisting agent composition is heated to 30 ℃ to 200 ℃ temperature one period about short period of time of 1 minute of experience in the scope.
With appropriate developer solution exposed film is developed to produce image.Appropriate developer solution generally contains alkali aqueous solution, is preferably the alkali aqueous solution that does not contain metal ion, and contains organic solvent according to circumstances.The those skilled in the art should be able to select appropriate developer solution.Standard industry developer solutions contains alkali, for example tetramethyl ammonium hydroxide (TMAH), choline, sodium hydroxide, potassium hydroxide, yellow soda ash, water glass, Starso, ammoniacal liquor, ethamine, Tri N-Propyl Amine, diethylamine, di-n-propylamine, triethylamine, methyl-diethyl-amine, ethyl dimethylamine, trolamine, pyrroles, piperidines, 1,8-diaza-bicyclo-[5.4.0]-7-undecylene and 1,5-diaza-bicyclo-[4.3.0]-5-nonene.In the positivity photoresist was used, the exposed region of photoresist was solvable, stays not exposed region.In the negativity photoresist, opposite result also is correct, and promptly exposed region does not dissolve in the photographic developer and exposed region will remain.After exposed film was developed, general water cleaned residue resist film (" pattern ") to remove any residual developer solution.
Then can be to the bottom substrate material with design transfer.Be coated with or double-deck photoresist in, this process comprises by the coating that may exist and by the bed course on the base layer and shifts pattern.In the individual layer photoresist, can directly be transferred to substrate.Generally, for example use oxygen, plasma body and/or oxygen/sulfurous gas plasma body by shifting pattern with reactive ion etching.Suitable plasma tool includes, but is not limited to electron cyclotron resonance (ECR), helicon, inductively coupled plasma (ICP) and transmission coupled plasma (TCP) system.Etching technique knows for us in this technology and the those skilled in the art should be familiar with different commercially available etching machines.
Thereby, can use Photoresisting agent composition of the present invention to produce the material layer structures of patterning, for example metal wiring, contact hole or the via hole that in the integrated circuit (IC) apparatus design, may use, insulation layer (for example damascene trench or shallow trench isolation from), be used for the groove of capacitor arrangement etc.The described process that is used for making these functional components is known in this technology.
Propose following example in order to further specifying the present invention, but should not be construed as limitation of the present invention.Although endeavoured to ensure the accuracy of numeral, should illustrate still to have some wrong and possible deviations.Unless refer else, otherwise percentage usually by weight, and temperature is ℃, and pressure is under atmospheric pressure.The employed all chemicals of this paper is to obtain by commercially available or synthetic, has according to known to the present inventor and the known structure of characterization.All NMR (1H, 13C, 19F, 29Si) data are to obtain on Varian Mercury300 or Mercury 400 spectrographs.
Embodiment
Example 1: hydrogen silsesquioxane resin (HSQ) synthetic.
To use dense H 2SO 4With smog SO 3100 prepared gram toluenesulphonic acids monohydrate (TSAM) solution of sulfonation toluene join in the 500ml flask that is equipped with water condenser, thermometer, magnetic stirring bar and nitrogen bubbler.Then the solution that trichlorosilane (10 grams, 0.075 mole) is dissolved in the 50 gram toluene dropwise is added in the flask under the violent stirring that links up.After the interpolation, mixture is cleaned 3 times at least, and collect organic phase with deionization (DI) water.Then under reduced pressure remove and desolvate to produce the hydrogen silsesquioxane resin solution of solids content in 5 to 25% scopes with rotatory evaporator.
Example 2:HSQ and 2-trifluoromethyl acrylate tertiary butyl ester resin
By about 0.1 mole 2-trifluoromethyl acrylate tertiary butyl ester (TBTFMA) is mixed (50: 50) and is independently prepared olefin solution with dehydrated toluene.With 1 of about 200ppm, 3-divinyl-1,1,3,3-tetramethyl disiloxane complex compound (platinum, concentrate) add so far in the mixture.
Olefin solution packed into be equipped with in the flask of water condenser, thermometer, magnetic stirring bar and nitrogen bubbler.After the nitrogen purge, HSQ solution prepared in the example 1 (contain have an appointment 0.33 mole HSQ solid) slowly is added in the olefin solution.After adding, with system reflux about 4 hours simultaneously appropriateness stir.Use 1H NMR monitoring hydrosilylation reactions until the olefin peaks completely dissolve.
Final resin solution with solids content in 4 to the 45 weight % scopes is to prepare to desired solvent (for example methyl proxitol acetate (PGMEA), ethyl lactate (EL), methyl iso-butyl ketone (MIBK) (MI BK) or methyl-n-amyl ketone (MAK)) by exchange of solvent.The molecular weight ranges of this resin is 3,000 to 25,000.
Example 3:HSQ and carboxylic acid dicyclo [2,2,1] heptan-5-alkene-2-tertiary butyl ester resin
By about 0.1 moles of carboxylic acids dicyclo [2,2,1] heptan-5-alkene-2-tertiary butyl ester is mixed (50: 50) and is prepared an olefin solution separately with dehydrated toluene.With 200ppm 1,3-divinyl-1,1,3,3-tetramethyl disiloxane complex compound (platinum, concentrate) add so far in the mixture.
Described olefin solution packed into be equipped with in the flask of water condenser, thermometer, magnetic stirring bar and nitrogen bubbler.After the nitrogen purge, HSQ solution prepared in the example 1 (contain have an appointment 0.33 mole HSQ) slowly is added in this olefin solution.After adding, with this system's backflow appropriateness stirring simultaneously in 8 hours.Use 1H NMR monitoring hydrosilylation reactions until the olefin peaks completely dissolve.
Final resin solution with solids content in 4 to the 45 weight % scopes is to prepare in the solvent (for example methyl proxitol acetate (PGMEA), ethyl lactate (EL), methyl iso-butyl ketone (MIBK) (MI BK) or methyl-n-amyl ketone (MAK)) to expecting by arbitrary exchange of solvent.
Example 4:HSQ and suitable-5-norbornylene-2,3-dicarboxylic anhydride resin
By with about 0.10 mole of suitable-5-norbornylene-2, the 3-dicarboxylic anhydride mixes (1: 10) and prepares an olefin solution separately with dehydrated toluene.Will about 200ppm 1,3-divinyl-1,1,3,3-tetramethyl disiloxane complex compound (platinum, concentrate) add so far in the mixture.
Described olefin solution packed into be equipped with in the flask of water condenser, thermometer, magnetic stirring bar and nitrogen bubbler.After the nitrogen purge, HSQ solution prepared in the example 1 (contain have an appointment 0.33 mole HSQ) is slowly added so far in the olefin solution.After adding, with this system's backflow appropriateness stirring simultaneously in 3 hours.Use 1H NMR monitoring hydrosilylation reactions until the olefin peaks completely dissolve.
Final resin solution with solids content in 4 to the 45 weight % scopes is to prepare in the solvent (for example methyl proxitol acetate (PGMEA), ethyl lactate (EL), methyl iso-butyl ketone (MIBK) (MI BK)) to expecting by arbitrary exchange of solvent.
Example 5:193 NM positive corrosion-resisting agent is estimated
By will be in 15 parts of examples 3 silsesquioxane resins, 0.3 part of light acid producing agent ((C that obtains from 3M of preparation 6H 5) 3S +SbF 6 -Or it is (right-(CH 3) 3CC 6H 4) 3C -(SO 2CF 3) 3) and 84.7 parts of PGMEA (electronic-grade comes from General Chemical) mix until evenly preparing a Photoresisting agent composition.
The photoresist solution of being prepared is filtered by 0.2 micron syringe filters, and then it is spun on 6 " on the silicon chip.Will through the coating silicon chip in 130 ℃ the baking 60 seconds, then with 8 to 100mJ/cm 2Dosage is exposed to 248nm or 193nm in the scope.Then this film was toasted 90 seconds at 130 ℃, and develop with the tetramethyl ammonium hydroxide (MF CD26 comes from Shipley) of 0.263 N.Acquisition has the high resolving power positive images of high-contrast and low line edge roughness (LER).
Example 6:193 NM positivity dual-layer applications
By will be in 15 parts of examples 3 silsesquioxane resins, 0.3 part of preparation produce light acid agent, (C 6H 5) 3S +SbF 6 -Or (by 3M obtain to (CH 3) 3CC 6H 4) 3C -(SO 2CF 3) 3) and 84.7 parts of PGMEA (electronic-grade comes from General Chemical) mix until evenly and the preparation Photoresisting agent composition.
" silicon chip, then suitably baking (for example 200 ℃, 90 seconds) is also solidified to remove solvent with an organic BARC layer (for example Brewer ARC 27) precoating 6.Then the photoresist solution of being prepared is spun on the above-mentioned silicon chip.Will be through the silicon chip of resist-coating in 100 ℃ of bakings (PAB) 60 seconds, then with 8 to 100mJ/cm 2Dosage is exposed under the 193nm in the scope.Then this film is toasted 90 seconds (PEB) at 130 ℃, and develop with the tetramethyl ammonium hydroxide (MF CD26 comes from Shipley) of 0.263N.Acquisition has the high resolving power positive images of high-contrast and low line edge roughness (LER).

Claims (63)

1. silsesquioxane resins, it comprises HSiO 3/2Unit and RSiO 3/2The unit, wherein R is acid with following formula base that can dissociate:
Each R wherein 3Independently for connecting base;
R 4It is the second connection base;
L is selected from the group that is made up of following: the alkarylene that has the straight or branched alkylidene group of 1 to 10 carbon atom, the fluoro alkylidene group with 2 to 20 carbon atoms, the arylidene that is substituted or is unsubstituted, the cycloalkylidene that is substituted or is unsubstituted and be substituted or be unsubstituted;
R 5Be hydrogen, straight or branched alkyl or fluoro-alkyl;
R 6Be alkyl or fluoro-alkyl;
Z is sour cleavable base; And
The g value can be 0 or 1 and
The h value can be described 0 or 1; And
The k value can be described 0 or 1.
2. silsesquioxane resins according to claim 1, wherein said silsesquioxane resins has formula (HSiO 3/2) a(RSiO 3/2) b, wherein R is the acid base that can dissociate, and a value is 0.2 to 0.9, and the b value is 0.1 to 0.8, and 0.9≤a+b≤1.0.
3. silsesquioxane resins according to claim 2, wherein a value be 0.6 to 0.8 and the b value be 0.2 to 0.6.
4. silsesquioxane resins according to claim 1, wherein said silsesquioxane resins has formula (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c, wherein R is the acid base that can dissociate, R 1Be selected from H or straight or branched C 1To C 6Alkyl, a value are 0.2 to 0.9, and the b value is 0.1 to 0.8, and the c value is 0.01 to 0.4, and 0.9≤a+b+c≤1.0.
5. silsesquioxane resins according to claim 4, wherein a value is 0.4 to 0.8, the b value be 0.2 to 0.6 and the c value be 0.05 to 0.15.
6. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(Si (OR 1) xO (4-x)/2) d, wherein R is the acid base that can dissociate, R 1Be selected from H or straight or branched C 1To C 6Alkyl, a value are 0.2 to 0.9, and the b value is 0.1 to 0.8, and the d value is 0.05 to 0.45,0.9≤a+b+d≤1.0, and the x value is 0 to 3.
7. silsesquioxane resins according to claim 6, wherein a value is 0.4 to 0.8, the b value be 0.2 to 0.6 and the d value be 0.1 to 0.25.
8. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(Si (OR 1) xO (4-x)/2) d, wherein R is the acid base that can dissociate, R 1Be selected from H or straight or branched C 1To C 6Alkyl, a value are 0.2 to 0.9, and the b value is 0.1 to 0.8, and the c value is 0.01 to 0.4, the d value be 0.05 to 0.45,0.9≤a+b+c+d≤1.0 and the x value be 0 to 3.
9. silsesquioxane resins according to claim 8, wherein a value is 0.4 to 0.8, the b value is 0.2 to 0.6, the c value be 0.05 to 0.15 and the d value be 0.1 to 0.25.
10. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(R 2SiO 3/2) e, wherein R is the acid base that can dissociate; R 2Be modification functional group, a value is 0.2 to 0.9, and the b value is 0.1 to 0.8, and the e value is 0.01 to 0.25, and 0.9≤a+b+e≤1.0.
11. silsesquioxane resins according to claim 10, wherein a value is 0.4 to 0.8, and the b value is 0.2 to 0.6, and the e value is 0.05 to 0.15.
12. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(R 2SiO 3/2) e, wherein R is the acid base that can dissociate; R 1Be selected from H or straight or branched C 1To C 6Alkyl; R 2It is modification functional group; The a value is 0.2 to 0.9, and the b value is 0.1 to 0.8, and the c value is 0.01 to 0.4, and the e value is 0.01 to 0.25, and 0.9≤a+b+c+e≤1.0.
13. silsesquioxane resins according to claim 12, wherein a value is 0.4 to 0.8, and the b value is 0.2 to 0.6, the c value be 0.05 to 0.15 and the e value be 0.05 to 0.15.
14. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(Si (OR 1) xO (4-x)/2) d(R 2SiO 3/2) e, wherein R is the acid base that can dissociate, R 1Be selected from H or straight or branched C 1To C 6Alkyl, R 2Be modification functional group, a value is 0.2 to 0.9, and the b value is 0.1 to 0.8, and the d value is 0.05 to 0.45, the e value be 0.01 to 0.25,0.9≤a+b+d+e≤1.0 and the x value be 0 to 3.
15. silsesquioxane resins according to claim 14, wherein a value is 0.4 to 0.8, the b value be 0.2 to 0.6 and the d value be 0.1 to 0.25 and the e value be 0.05 to 0.15.
16. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(Si (OR 1) xO (4-x)/2) d(R 2SiO 3/2) e, wherein R is the acid base that can dissociate, R 1Be selected from H or straight or branched C 1To C 6Alkyl, R 2Be modification functional group, a value is 0.2 to 0.9, and the b value is 0.1 to 0.8, and the c value is 0.01 to 0.4, and the d value is 0.05 to 0.45, the e value be 0.01 to 0.25,0.9≤a+b+c+d+e≤1.0 and the x value be 0 to 3.
17. silsesquioxane resins according to claim 16, wherein a value is 0.4 to 0.8, and the b value is 0.2 to 0.6, the c value be 0.05 to 0.15 and the d value be 0.1 to 0.25 and the e value be 0.05 to 0.15.
18. silsesquioxane resins according to claim 1, wherein Z be selected from-OH ,-COOH, have formula-COOR 7Ester, have formula-OCOOR 8Carbonic ether, have formula-OR 9Ether, wherein select R 7, R 8And R 9Make Z acid cleavable.
19. silsesquioxane resins according to claim 18, wherein Z is for having formula-COOR 7Ester, R wherein 7Be tertiary alkyl.
20. silsesquioxane resins according to claim 1, wherein R is selected from 1 of norbornane, 1-dimethyl ethyl, sec.-propyl, 2-methyl adamantane base, cyclohexyl and 2-hydroxyl-3-pinane base or tertiary butyl ester.
21. silsesquioxane resins according to claim 20, wherein R is the tertiary butyl ester of norbornane.
22. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b, wherein to be selected from sec.-propyl, 2-methyl adamantane base, cyclohexyl, 2-hydroxyl-3-pinane base or tertiary butyl ester and a value of norbornane be 0.4 to 0.9 to R, the b value is 0.1 to 0.6 and 0.9≤a+b≤1.0.
23. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(R 1OSiO 3/2) c(SiO 4/2) d, wherein R is selected from sec.-propyl, 2-methyl adamantane base, cyclohexyl, 2-hydroxyl-3-pinane base or tertiary butyl dicyclo [2,2,1] heptane-2-carboxylicesters; R 1Be H; The a value is 0.5 to 0.7, and the b value is 0.2 to 0.45, and the c value is 0.05 to 0.2, and the d value is 0.01 to 0, and 0.9≤a+b+c+d≤1.0.
24. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(Si (OR 1) xO (4-x)/2) d(R 2SiO 3/2) e, wherein R is selected from sec.-propyl, 2-methyl adamantane base, cyclohexyl, 2-hydroxyl-3-pinane base or tertiary butyl dicyclo [2,2,1] heptane-2-carboxylicesters; R 1Be H; R 2Be selected from dicyclo [2,2,1] heptan-5-alkene-2-(1,1,1-three fluoro-2-trifluoromethyl propan-2-ols, 2-trifluoromethyl dicyclo [2,2,1] heptan-5-alkene-2-alcohol, 3,3,3-trifluoro propan-2-ol, 2-trifluoromethyl-3,3-two fluoro-dicyclos [2,2,1] heptan-5-alkene-2-alcohol; The a value is 0.4 to 0.6, and the b value is 0.2 to 0.45, and the c value is 0.05 to 0.20, and the d value is 0.01 to 0.15, and the e value is 0.01 to 0.25 and 0.9≤a+b+c+d+e≤1.0.
25. silsesquioxane resins according to claim 1, wherein said resin has formula (HSiO 3/2) a(RSiO 3/2) b(HSi (OR 1) O 2/2) c(Si (OR 1) xO ( 4-x) / 2) d(R 2SiO 3/2) e(SiO 4/2) f, wherein R is the acid base that can dissociate, R 1Be selected from H or straight or branched C 1To C 6Alkyl, R 2Be modification functional group, a value is 0.2 to 0.9, and the b value is 0.1 to 0.8, and the c value is 0.01 to 0.4, and the d value is 0.05 to 0.45, and the e value is that 0.01 to 0.25,0.0≤f≤0.20,0.9≤a+b+c+d+e+f≤1.0 and x value are 0 to 3.
26. silsesquioxane resins according to claim 8, wherein a value is 0.4 to 0.8, and the b value is 0.2 to 0.6, the c value be 0.05 to 0.15 and the d value be 0.1 to 0.25, the e value is 0.05 to 0.15.
27. a method for preparing silsesquioxane resins, it comprises makes
(I) has formula (HSiO 3/2) m(HSi (OR 1) O 2/2) n(Si (OR 1) xO (4-x)/2) pHydrogen silsesquioxane resin, R wherein 1Be selected from H or straight or branched C 1To C 6Alkyl, m value are 0.7 to 1.0, and the n value is 0 to 0.4, the p value be 0 to 0.45,0.9≤m+n+p≤1.0 and the x value be 0 to 3; With
(II) acid can be dissociated basic precursor reaction to produce
(III) has general formula (HSiO 3/2) M1(RSiO 3/2) M2(HSi (OR 1) O 2/2) n(Si (OR 1) xO (4-x)/2) pSilsesquioxane resins, wherein R is the acid base that can dissociate; The m2 value is 0.1 to 0.8, and m1+m2=m.
28. method according to claim 27, wherein said reaction are to be undertaken by (I) and catalytic hydrosilylation (II).
29. method according to claim 27, the wherein said acid basic precursor that can dissociate is tertiary butyl ester, 2-trifluoromethyl acrylate tertiary butyl ester, the carboxylic acid dicyclo [2 that is selected from norbornylene, 2,1] heptan-5-alkene-2-tertiary butyl ester and suitable-5-norbornylene-2, the 3-dicarboxylic anhydride.
30. method according to claim 27, wherein said being reflected under the solvent existence carried out.
31. method according to claim 30, wherein said solvent are selected from alcohols, arene, alkanes, ketone, ester class; Glycol ethers; Type siloxane, cellosolvo, methyl proxitol acetate (PGMEA), pimelinketone and 1, the 2-diethoxyethane.
32. method according to claim 27 is wherein at first with described hydrogen silsesquioxane resin and functional group precursor reaction.
33. method according to claim 32, wherein said reaction are to be undertaken by catalytic hydrosilylation described (I) and described functional group precursor.
34. method according to claim 27 is wherein further reacted described silsesquioxane resins (III) and functional group precursor.
35. method according to claim 34, wherein said reaction are to be undertaken by catalytic hydrosilylation described (III) and described functional group precursor.
36. method according to claim 27 is wherein with (I) and the mixture reaction that comprises (II) and functional group precursor.
37. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 1 and (B) acidogenic agent.
38. according to the described photo-corrosion-resisting agent composition of claim 37, wherein said acidogenic agent is to be selected from salt, halogen contained compound class, diazo ketone compounds, sulphones class, sulfonate.
39. according to the described photo-corrosion-resisting agent composition of claim 38, wherein said acidogenic agent is a sulfonate compound.
40. according to the described photo-corrosion-resisting agent composition of claim 37, wherein said resin is existing with the amount of solid up to 99.5 weight %, and described acidogenic agent is to exist in the amount with solid 0.5 to 10 weight %.
41., wherein have at least a additive that is selected from sour diffusion control agent, tensio-active agent, dissolution inhibitor, linking agent, sensitizer, halation inhibitor, tackifier, storage-stable agent, defoamer, coating additive and softening agent in addition according to the described photo-corrosion-resisting agent composition of claim 37.
42. according to the described photo-corrosion-resisting agent composition of claim 41, wherein said additive is to exist with the amount of solid less than 20 weight %.
43. according to the described photo-corrosion-resisting agent composition of claim 37, wherein said composition provides in solvent.
44. according to the described photo-corrosion-resisting agent composition of claim 43, wherein said solvent be selected from contain ether, contain ester, hydroxyl and contain the compound of ketone.
45. according to the described photo-corrosion-resisting agent composition of claim 44, wherein said solvent is to exist in the amount with weight 50 to the 99.5 weight % of total photo-corrosion-resisting agent composition.
46. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 2 and (B) acidogenic agent.
47. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 4 and (B) acidogenic agent.
48. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 6 and (B) acidogenic agent.
49. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 8 and (B) acidogenic agent.
50. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 10 and (B) acidogenic agent.
51. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 12 and (B) acidogenic agent.
52. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 14 and (B) acidogenic agent.
53. a photo-corrosion-resisting agent composition, it comprises (A) silsesquioxane resins according to claim 16 and (B) acidogenic agent.
54. a method that is used for producing image against corrosion on substrate, it comprises (a) and uses film coated one substrate that comprises according to the described photo-corrosion-resisting agent composition of claim 37; (b) described film is become image be exposed under the radiation to produce exposed film; (c) exposed film is developed to produce image.
55. according to the described method of claim 54, wherein by spin coating with film coated on described substrate.
56. according to the described method of claim 54, wherein said film has 0.01 to 5 micron thickness.
57. according to the described method of claim 54, wherein said radiation is selected from UV, X-ray, electron beam and EUV.
58. according to the described method of claim 54, wherein said radiation has the wavelength within 157nm to the 365nm scope.
59. according to the described method of claim 54, wherein said radiation has the wavelength of 157nm or 193nm.
60. according to the described method of claim 54, wherein said exposed film was to heat under 30 ℃ to 200 ℃ temperature before developing.
61., wherein contact with alkali aqueous solution and described exposed film developed by described exposed film according to the described method of claim 54.
62. a method that is used for producing image against corrosion on substrate, it comprises (a) and uses film coated one substrate that comprises according to the described photo-corrosion-resisting agent composition of claim 43; (b) become image to be exposed under the radiation described film; (c) described exposed film is developed to produce image.
63. according to the described method of claim 62, wherein said film is dry before being exposed to described radiation.
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