CN1763554A - Method for measuring carrier mobility of organic semiconductor in frequency domain - Google Patents
Method for measuring carrier mobility of organic semiconductor in frequency domain Download PDFInfo
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- CN1763554A CN1763554A CN 200510086781 CN200510086781A CN1763554A CN 1763554 A CN1763554 A CN 1763554A CN 200510086781 CN200510086781 CN 200510086781 CN 200510086781 A CN200510086781 A CN 200510086781A CN 1763554 A CN1763554 A CN 1763554A
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CNB2005100867811A CN100365421C (en) | 2005-11-04 | 2005-11-04 | Method for measuring carrier mobility of organic semiconductor in frequency domain |
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CNB2005100867811A CN100365421C (en) | 2005-11-04 | 2005-11-04 | Method for measuring carrier mobility of organic semiconductor in frequency domain |
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CN1763554A true CN1763554A (en) | 2006-04-26 |
CN100365421C CN100365421C (en) | 2008-01-30 |
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CNB2005100867811A Expired - Fee Related CN100365421C (en) | 2005-11-04 | 2005-11-04 | Method for measuring carrier mobility of organic semiconductor in frequency domain |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101569022B (en) * | 2007-07-23 | 2011-02-02 | Lg伊诺特有限公司 | Light emitting device and method of manufacturing the same |
CN102023086A (en) * | 2010-07-02 | 2011-04-20 | 北京交通大学 | Method for determining luminescence period of organic electroluminescence by utilizing variable frequency alternating current power supply |
CN101382574B (en) * | 2008-09-09 | 2011-06-08 | 吉林大学 | Method for measuring carrier mobility of organic semiconductor by using evanescent wave as excitation source |
CN102890229A (en) * | 2012-10-12 | 2013-01-23 | 南京邮电大学 | Admittance spectrum principle-theory method for researching performance of organic semiconductor |
CN105548267A (en) * | 2016-01-13 | 2016-05-04 | 南京邮电大学 | Method for determining organic semiconductor thickness dependent migration rate through impedance spectroscopy method |
CN107589360A (en) * | 2017-08-29 | 2018-01-16 | 中国科学院半导体研究所 | Semiconductor test apparatus and method |
CN108226739A (en) * | 2018-01-19 | 2018-06-29 | 河北工业大学 | The test method of organic electroluminescence device alternating temperature dipulse transient state photoresponse |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59178739A (en) * | 1983-03-30 | 1984-10-11 | Hitachi Ltd | Device for measuring carrier mobility |
JPS6442143A (en) * | 1987-08-10 | 1989-02-14 | Hitachi Ltd | Noncontact carrier mobility measuring device |
RO113908B1 (en) * | 1992-12-21 | 1998-11-30 | Benedict Popescu | Method for measuring carrier mobility in amorphous hydrogenated thin silicon layers |
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2005
- 2005-11-04 CN CNB2005100867811A patent/CN100365421C/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101569022B (en) * | 2007-07-23 | 2011-02-02 | Lg伊诺特有限公司 | Light emitting device and method of manufacturing the same |
CN101382574B (en) * | 2008-09-09 | 2011-06-08 | 吉林大学 | Method for measuring carrier mobility of organic semiconductor by using evanescent wave as excitation source |
CN102023086A (en) * | 2010-07-02 | 2011-04-20 | 北京交通大学 | Method for determining luminescence period of organic electroluminescence by utilizing variable frequency alternating current power supply |
CN102890229A (en) * | 2012-10-12 | 2013-01-23 | 南京邮电大学 | Admittance spectrum principle-theory method for researching performance of organic semiconductor |
CN105548267A (en) * | 2016-01-13 | 2016-05-04 | 南京邮电大学 | Method for determining organic semiconductor thickness dependent migration rate through impedance spectroscopy method |
CN105548267B (en) * | 2016-01-13 | 2019-08-02 | 南京邮电大学 | Measured By Impedance Spectroscopy determines the mobility method that organic semiconductor thickness relies on |
CN107589360A (en) * | 2017-08-29 | 2018-01-16 | 中国科学院半导体研究所 | Semiconductor test apparatus and method |
CN107589360B (en) * | 2017-08-29 | 2020-01-31 | 中国科学院半导体研究所 | Semiconductor testing device and method |
CN108226739A (en) * | 2018-01-19 | 2018-06-29 | 河北工业大学 | The test method of organic electroluminescence device alternating temperature dipulse transient state photoresponse |
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CN100365421C (en) | 2008-01-30 |
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Owner name: JIANGSU AIDE SOLAR ENERGY TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: BEIJING JIAOTONG UNIVERSITY Effective date: 20090925 |
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Effective date of registration: 20090925 Address after: Peach mountain in Jiangsu Xuzhou Economic Development Zone No. 69 Patentee after: Jiangsu Aide Solar Technology Co., Ltd. Address before: Beijing city Haidian District Xizhimen Shangyuan Village No. 3 Patentee before: Beijing Jiaotong University |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jiangsu Aide Solar Technology Co., Ltd. Assignor: Beijing Jiaotong University Contract fulfillment period: 2009.7.5 to 2025.1.5 contract change Contract record no.: 2009320001505 Denomination of invention: Method for measuring carrier mobility of organic semiconductor in frequency domain Granted publication date: 20080130 License type: Exclusive license Record date: 2009.8.12 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.7.5 TO 2025.1.5; CHANGE OF CONTRACT Name of requester: JIANGSU AIDE SOLAR ENERGY TECHNOLOGY CO., LTD. Effective date: 20090812 |
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Granted publication date: 20080130 Termination date: 20131104 |