CN1763554A - Method for measuring carrier mobility of organic semiconductor in frequency domain - Google Patents

Method for measuring carrier mobility of organic semiconductor in frequency domain Download PDF

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Publication number
CN1763554A
CN1763554A CN 200510086781 CN200510086781A CN1763554A CN 1763554 A CN1763554 A CN 1763554A CN 200510086781 CN200510086781 CN 200510086781 CN 200510086781 A CN200510086781 A CN 200510086781A CN 1763554 A CN1763554 A CN 1763554A
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layer
frequency
mobility
detection
measured
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CN100365421C (en
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徐征
张福俊
赵谡玲
徐叙瑢
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Jiangsu Aide Solar Energy Technology Co Ltd
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Beijing Jiaotong University
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Abstract

The invention discloses a mobility measuring method of organic semiconductor carrier in the frequency domain, which is characterized by the following: preparing a (10-8s) organic luminous film of symbol carrier short luminous lifetime as detection layer; adapting the agitation frequency variation along with the luminous lightness to measure the carrier mobility that mu=(d2/tv)(cm2/s.v), wherein mu is mobility; d is layer thickness; t corresponds to the f0 semi-perimeter; v is crossover detected layer drop of potential; f0 is the needed time of detected sample.

Description

In frequency domain, measure the method for carrier mobility of organic semiconductor
Technical field
The present invention relates to a kind of method of measuring carrier mobility of organic semiconductor, it will be assessed: the 1) mobility of electronics in the organic semiconductor.2) mobility in hole in the organic semiconductor.3) the organic semiconductor mobility is with the variation of electric field intensity.4) selection of design organic semiconductor electronics and luminescent device time-frequency domain parameter.
Background technology
The key parameter that influences the device electric property in organic semiconductor device is exactly positive and negative, what, the mobility of charge carrier.Its mobility is very low, about 10 -2Cm 2Under/the V.s, the survey mobility can not have been utilized the Hall measuring method in the inorganic semiconductor.To organic semiconducting materials, generally be method that adopt to measure the flight time, it mainly adopts light pulse to produce charge carrier, facilitates the motion of photo-generated carrier with electric field, in the time that the terminal measuring-signal of direction of motion occurs.This method is very complicated, it needs two excitaton sources: one is electric current, another is a light source, and the optical excitation zone is very narrow, be equivalent to space impulse, it is better narrow to heal, and perhaps its edge is very sharp, generally be with pulse laser front illuminated film, big by the organic semi-conductor absorption coefficient, excitation area is narrow.It is the main source that causes measuring error, and the data of measuring also will be done suitable processing.
Summary of the invention
The technical problem to be solved in the present invention is the problem that overcomes the optical excitation obscure boundary Chu of prior art existence, a method of measuring carrier mobility has been proposed, a detection of luminescence district is set, make a kind of charge carrier of symbol in detecting area, can only advance to go out, make the charge carrier of another kind of symbol enter detecting area from another side, two kinds of charge carriers are compound and luminous at detecting area.When stimulating frequency changed, the short charge carrier of firing time does not reach detecting layer can be not luminous, reduces frequency measurement and frequency numerical value when luminous occurs, can measure the mobility of charge carrier rate with the detecting area opposite polarity.This is the measurement at carrier transport properties, but is not to utilize electrical measurement, but measures with luminescence phenomenon.
Technical scheme of the present invention:
In frequency domain, measure the step of the method for carrier mobility of organic semiconductor:
1. in frequency domain, measure the method for carrier mobility of organic semiconductor, the step of this method:
Step 1, the device of electron mobility is measured in preparation: the ito glass that cleans up is dry in baking oven, on ito glass, evaporate the detection of luminescence layer then successively, the separation layer of a transmission electronic and blocking hole, layer to be measured, A1 electrode;
The device of hole mobility is measured in preparation: the ito glass that cleans up is dry in baking oven, on ito glass, evaporate layer to be measured then successively, the separation layer of a transporting holes and block electrons, detection of luminescence layer, A1 electrode; The luminescent lifetime of detection of luminescence layer is less than 10 -8S, thickness is less than 20nm;
Step 2 applies excitaton source on device, excitaton source is sine, pulse or square wave alternating-current electricity, and the bandwidth of stimulating frequency is at 10Hz-10 8Between the Hz;
Step 3, it is luminous until occurring to begin to measure and reduce gradually frequency from high frequency, continues to reduce frequency, luminous grow, record experimental data;
Step 4 intersects all experimental data lines and prolongation with frequency axis, the frequency values of its intersection point is exactly a pairing frequency of respective transmissions time, and its inverse is charge carrier is transported to the detection of luminescence layer from electrode time;
Step 5, according to μ = d 2 tV cm 2 / s . V , Derive the carrier mobility of detected materials, wherein μ is a carrier mobility, and d is the thickness of film, and t is the time, and V is a potential drop of crossing over layer to be measured.
The technique effect that the present invention compares with prior art:
Electric field intensity is lower than the electric field intensity of device operate as normal when measuring carrier mobility in the prior art, and measurement result and actual conditions have certain error, and the present invention measures under the normal applied electric field intensity of device, and measurement result meets actual value.Test condition is simple, and experimental apparatus is not had special requirement.
Principle of the present invention and foundation:
Luminous is electronics and hole-recombination and produce, and when the charge carrier in the detecting layer ran into the charge carrier of contrary sign, the two could be compound and luminous, selects the luminous life-span of this detecting layer short as far as possible, Alq3:10 -8S, PPV:10 -8S.Occurring the luminous time like this and be exactly electrode under pulse excitation added between the detecting layer light emission period to the detecting layer charge transport time.The latter can ignore much smaller than the former.The time of pulse half cycle just all is used for carrier transport like this, and when frequency was high, charge carrier did not reach detecting layer, and is just not luminous.Reduce stimulating frequency, until recombination luminescence occurring.Continue to reduce stimulating frequency, luminous intensity should strengthen.These intensity lines, be extrapolated to frequency axis, its intersection point is exactly that charge carrier is crossed over layer required time frequency value corresponding to be measured just.
Description of drawings
Fig. 1 measures the device architecture figure (device 1) of electron mobility
Fig. 2 measures the device architecture figure (device 2) of hole mobility
The brightness of Fig. 3 device 1 is with the Changing Pattern of stimulating frequency
The brightness of Fig. 4 device 2 is with the Changing Pattern of stimulating frequency
Embodiment
In frequency domain, measure the method for carrier mobility of organic semiconductor:
1. the device of electron mobility is measured in preparation, and its structure is seen Fig. 1.
The ito glass that cleans up is dry in baking oven, the detection of luminescence layer of growing successively on ito glass then is the thickness 12nm of hole mobile material PVK, the thickness 12nm of the separation layer BCP of transmission electronic and blocking hole, the thickness 60nm of layer Alq3 to be measured, evaporation A1 electrode.Insolated layer materials also can adopt PBD or ZnS etc.The detection of luminescence layer is other hole mobile materials: MEH-PPV or PPV etc. also.
The device of hole mobility is measured in preparation, and its structure is seen Fig. 2;
With the ito glass drying in baking oven that cleans up, on ito glass, evaporate the thickness 60nm of layer MEH-PPV to be measured then successively, the thickness 12nm of the separation layer NPB of a transporting holes and block electrons, the thickness 12nm of detection of luminescence layer Alq3, A1 electrode.Insolated layer materials also can adopt PVK or PPV etc.The detection of luminescence layer can also be other electron transport materials: PBD or ZnS etc.
According to various objectives, preparation can be measured the device of the mobility in electronics, hole, and wherein the luminescent lifetime of detection of luminescence layer material is less than 10 -8S, bed thickness is less than 20nm.
2. apply excitaton source on device, excitaton source is sine, pulse or square wave alternating-current electricity, and the bandwidth of stimulating frequency is at 10Hz-10 8Between the Hz;
3. it is luminous until occurring to begin to measure and reduce gradually frequency from high frequency, continues to reduce frequency, and luminous grow is found out the variation of luminosity with frequency;
4. all experimental data lines and prolongation are intersected with frequency axis, the frequency values of its intersection point is exactly a pairing frequency of respective transmissions time, and its inverse is charge carrier is transported to the detection of luminescence layer from electrode time;
According to μ = d 2 tV ( cm 2 / s . V ) , Derive the carrier mobility μ of detected materials, wherein μ is a carrier mobility, and d is the thickness of film, and t is the time, and V is a potential drop of crossing over layer to be measured.
Fig. 3 is the Changing Pattern of the brightness of device 1 with stimulating frequency:
According to μ = d 2 tV ( cm 2 / s . V ) , Driving voltage is 8V, and electric charge is crossed over layer required time to be measured t = 1 2 × 1 31555 , The electron mobility that calculates Alq3 in the device 1 is: 2.85 * 10 -7(cm 2/ s.v).
The brightness of Fig. 4 device 2 is with the Changing Pattern of stimulating frequency:
According to μ = d 2 tV ( cm 2 / s . V ) , The thickness 60nm of layer to be measured, the size of driving voltage is 8V, electric charge is crossed over layer required time to be measured t = 1 2 × 1 227326 , The hole mobility that calculates MEH-PPV in the device 2 is: 2.05 * 10 -6(cm 2/ s.v).

Claims (3)

1. in frequency domain, measure the method for carrier mobility of organic semiconductor, it is characterized in that the step of this method:
Step 1, the device of electron mobility is measured in preparation: the ito glass that cleans up is dry in baking oven, on ito glass, evaporate the detection of luminescence layer then successively, the separation layer of a transmission electronic and blocking hole, layer to be measured, Al electrode;
The device of hole mobility is measured in preparation: the ito glass that cleans up is dry in baking oven, on ito glass, evaporate layer to be measured then successively, the separation layer of a transporting holes and block electrons, detection of luminescence layer, Al electrode; The luminescent lifetime of detection of luminescence layer is less than 10 -8S, thickness is less than 20nm;
Step 2 applies excitaton source on device, excitaton source is sine, pulse or square wave alternating-current electricity, and the bandwidth of stimulating frequency is at 10Hz-10 8Between the Hz;
Step 3, it is luminous until occurring to begin to measure and reduce gradually frequency from high frequency, continues to reduce frequency, luminous grow, record experimental data;
Step 4 intersects all experimental data lines and prolongation with frequency axis, the frequency values of its intersection point is exactly a pairing frequency of respective transmissions time, and its inverse is charge carrier is transported to the detection of luminescence layer from electrode time;
Step 5, according to μ = d 2 tV cm 2 / s . V , Derive the carrier mobility of detected materials, wherein μ is a carrier mobility, and d is the thickness of film, and t is the time, and V is a potential drop of crossing over layer to be measured.
2. the method for in frequency domain, measuring carrier mobility of organic semiconductor according to claim 1, it is characterized in that: when surveying electron mobility, the detection of luminescence layer is a hole mobile material: PVK, MEH-PPV or PPV, when surveying hole mobility, the detection of luminescence layer is an electron transport material: Alq3, PBD or ZnS.
3. the method for measuring carrier mobility of organic semiconductor in frequency domain according to claim 1, it is characterized in that: excitaton source also can adopt ac square-wave voltage.
CNB2005100867811A 2005-11-04 2005-11-04 Method for measuring carrier mobility of organic semiconductor in frequency domain Expired - Fee Related CN100365421C (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101569022B (en) * 2007-07-23 2011-02-02 Lg伊诺特有限公司 Light emitting device and method of manufacturing the same
CN102023086A (en) * 2010-07-02 2011-04-20 北京交通大学 Method for determining luminescence period of organic electroluminescence by utilizing variable frequency alternating current power supply
CN101382574B (en) * 2008-09-09 2011-06-08 吉林大学 Method for measuring carrier mobility of organic semiconductor by using evanescent wave as excitation source
CN102890229A (en) * 2012-10-12 2013-01-23 南京邮电大学 Admittance spectrum principle-theory method for researching performance of organic semiconductor
CN105548267A (en) * 2016-01-13 2016-05-04 南京邮电大学 Method for determining organic semiconductor thickness dependent migration rate through impedance spectroscopy method
CN107589360A (en) * 2017-08-29 2018-01-16 中国科学院半导体研究所 Semiconductor test apparatus and method
CN108226739A (en) * 2018-01-19 2018-06-29 河北工业大学 The test method of organic electroluminescence device alternating temperature dipulse transient state photoresponse

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178739A (en) * 1983-03-30 1984-10-11 Hitachi Ltd Device for measuring carrier mobility
JPS6442143A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Noncontact carrier mobility measuring device
RO113908B1 (en) * 1992-12-21 1998-11-30 Benedict Popescu Method for measuring carrier mobility in amorphous hydrogenated thin silicon layers

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101569022B (en) * 2007-07-23 2011-02-02 Lg伊诺特有限公司 Light emitting device and method of manufacturing the same
CN101382574B (en) * 2008-09-09 2011-06-08 吉林大学 Method for measuring carrier mobility of organic semiconductor by using evanescent wave as excitation source
CN102023086A (en) * 2010-07-02 2011-04-20 北京交通大学 Method for determining luminescence period of organic electroluminescence by utilizing variable frequency alternating current power supply
CN102890229A (en) * 2012-10-12 2013-01-23 南京邮电大学 Admittance spectrum principle-theory method for researching performance of organic semiconductor
CN105548267A (en) * 2016-01-13 2016-05-04 南京邮电大学 Method for determining organic semiconductor thickness dependent migration rate through impedance spectroscopy method
CN105548267B (en) * 2016-01-13 2019-08-02 南京邮电大学 Measured By Impedance Spectroscopy determines the mobility method that organic semiconductor thickness relies on
CN107589360A (en) * 2017-08-29 2018-01-16 中国科学院半导体研究所 Semiconductor test apparatus and method
CN107589360B (en) * 2017-08-29 2020-01-31 中国科学院半导体研究所 Semiconductor testing device and method
CN108226739A (en) * 2018-01-19 2018-06-29 河北工业大学 The test method of organic electroluminescence device alternating temperature dipulse transient state photoresponse

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