CN1739129A - Peeling method and method for manufacturing display device using the peeling method - Google Patents

Abstract

The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

Description

Stripping means and adopt the manufacture method of the display device of this stripping means

Technical field

The present invention relates to the stripping means of functional film, be specifically related to have the film of various elements and the stripping means of layer.The invention still further relates to semiconductor device and manufacture method thereof that the film that will peel off adheres to the printing transferring method on the film substrate and has the thin film transistor (TFT) (hereinafter referred to as TFT) that adopts this printing transferring method and form.

Technical background

People are just paying close attention to use and have the technology that the semiconductive thin film that forms on the substrate of insulating surface (thickness for number～hundreds of nm about) constitutes TFT in recent years.TFT is widely used in developing as the on-off element and the driving circuit of display device especially in I C and this electron-like device of electro-optical device.

Glass substrate and quartz base plate are used morely in this display device, but exist substrate to be easy to broken and heavy shortcoming.Therefore glass substrate and quartz base plate are difficult to maximize in producing in a large number.Therefore, just trying to have flexual substrate, typically on the plastic sheeting of flexibility, forming the TFT element.

But if use high performance polysilicon film on the active layer of TFT, then hundreds of ℃ pyroprocessing is necessary in manufacturing process, therefore can not directly form on plastic sheeting.

Therefore, proposed will be on substrate with separating layer between middle and exist be stripped from the method that layer is peeled off from aforesaid substrate.The separating layer of being made up of amorphous silicon, semiconductor, nitride ceramics or organic polymer for example is set, makes laser pass through substrate and shine, on separating layer, peel off in the generation layer etc., make substrate separate (with reference to patent documentation 1).This technology of employing is also arranged simultaneously and will be stripped from that layer (be called and be transferred layer) adheres on the plastic sheeting and the record (with reference to patent documentation 2) of finishing liquid crystal indicator in communique.In addition, if consult the report relevant, then can introduce the technology (with reference to non-patent literature 1) of each company with flexible display.

(patent documentation 1) spy opens flat 10-125929 communique

(patent documentation 2) spy opens flat 10-125930 communique

(non-patent literature 1) Nikkei microwave device, Nikkei BP society, on July 1st, 2002, July in 2002 1 day number, p.71-72

Summary of the invention

Yet the problem of above-mentioned stripping process is many, has room for improvement.In addition, must consider especially evenly to carry out this point for large substrate.

Therefore, the invention provides a kind of method of simplifying stripping process and simply carrying out.In addition, the invention provides a kind of light-emitting device, liquid crystal indicator and other display device that adopts said method to form.

In view of above-mentioned problem, the invention is characterized in: carry out simultaneously in the stripping process the 1st bonding agent peel off sclerosis with the 2nd bonding agent, simplify manufacturing process.In addition, the invention is characterized in: be stripped from layer by further investigation and be transferred to moment on the regulation substrate, simplify manufacturing process.

In addition, the present invention is stripped from peeling off easily of layer in order to make, and is best, imposes physically cut or the section of being stripped from layer is exposed.

In addition, the invention is characterized in: when peeling off on the large substrate, to peel off precision and correctness in order improving especially under the state that forms a plurality of semiconductor elements, to utilize pressure differential, the absorption substrate is peeled off.

Specifically, shown in Fig. 1 (A), on the 1st substrate 100, form and be stripped from layer 101.Be stripped from layer and finally can have the Presentation Function that comprises semiconductor element, electrode and liquid crystal layer (liquid crystal cell) and luminescent layer (light-emitting component) and driving circuit etc., and the implementer can determine to peel off constantly and be stripped from the relation of the manufacturing state of layer.For example the layer of being stripped from of Fig. 1 (A) both can be to have formed semiconductor element and the state of the electrode that is connected with this semiconductor element, also can be the state that has also formed liquid crystal cell and light-emitting component.

The 1st substrate preferably has the rigidity of the stripping process that can stand the back, for example can use glass substrate, quartz base plate, ceramic substrate, silicon substrate, metal substrate or stainless steel substrate.

In addition, the semiconductor layer element of being stripped from layer also can be photo-electric conversion element and sensistor element or the sensing element (being typically the pressure sensitive fingerprint sensor that uses polysilicon) etc. that are made of the PIN with noncrystalline semiconductor film TFT, organic tft, thin film diode, silicon.In addition, both can be bottom gate type for TFT, also can be top grid type.

Shown in Fig. 1 (B), be stripped from formation stress mitigation part 103 on the layer then.Though it is unnecessary in stripping process that stress relaxes part, is stripped from layer in order to protect, and preferably will be provided with.Stress relaxes part can use water soluble resin, thermosetting resin, ray hardening resin and other resin.Being purpose owing to being stripped from layer with protection promptly, so flexible high organic resin is good, in addition, if consider and will finally be removed, can be the material of removing with physical method also then, and the material that stickability reduces because of washing, heat or light be good.

Shown in Fig. 1 (C), then be stripped from peeling off easily of layer in order to make, best, the 1st substrate, semiconductor element and stress are relaxed part cut off.The cut-out means can adopt laser and cutting machine etc.

Though it is dispensable in stripping process to cut off operation, in order to be easy to peel off, preferably exposes the section at the interface of separation.And can be by physical means such as cutting machine cut etc. on the section at the interface that will cut off.In addition, also can not cut off the 1st substrate and only incision be stripped from layer and stress and relax in the part etc.

Shown in Fig. 1 (D), be stripped from adhesion the 2nd substrate 105 on the layer then.At this moment, use the 1st bonding agent 106 to fix, if but substrate self has binding function, just do not need bonding agent.Best, the 2nd substrate uses rigidity to be higher than the substrate of the 1st substrate, can use the higher quartz base plate of rigidity.The 1st bonding agent can use the bonding agent that can peel off, the ultraviolet exfoliated bonding agent that for example because of ultraviolet ray stickability is reduced or peel off, makes heat-releasable bonding agent that stickability reduces or peel off, stickability is reduced or the water soluble adhesive peeled off and double sticky tape etc. because of washing etc. because of heat.

In addition, in order to carry out stripping process more reliably, also assisting base plate 108 can be set under the 1st substrate.At this moment, if assisting base plate does not have cementability, then use bonding agent 107 to fix.In addition, the bonding agent that the 2nd substrate and assisting base plate and the 1st bonding agent and assisting base plate are fixed can use identical materials.

Shown in Fig. 1 (E), use physical means to peel off then.Shown in Fig. 1 (E),, then can on the 2nd substrate and assisting base plate, apply the power of effect in opposite direction if be provided with assisting base plate; If be not provided with assisting base plate, then also can the thin slice that stickability is high be fixed under the 1st substrate and peel off.

Especially,, also can utilize pressure differential, make substrate absorption, peel off for large substrate is evenly peeled off.That is to say, for example also can the substrate that will peel off be set on the substrate of emptying aperture forming, make this emptying aperture decompression or be in vacuum state, utilize whole base plate that pressure differential will peel off to peel off under the evenly fixing state by pump etc.

Shown in Fig. 2 (F), the 3rd substrate 110 is fixed on is stripped from layer down then.If self does not have cementability the 3rd substrate, then undertaken bonding by the 2nd bonding agent 111.The 3rd substrate can use the thin substrate of thickness such as plastic bases such as polycarbonate, polyacrylate, polyethersulfone, ptfe substrate or ceramic substrate and have flexual (flexible) substrate (following these substrates are designated as film substrate).The 2nd bonding agent can use ultraviolet hardening resin, thermosetting resin etc.But the 1st bonding agent and the 2nd bonding agent must have because of opposite character such as ultraviolet ray and heat.That is to say, must reduce or peel off the sclerosis of the 2nd substrate because of the stickability of ultraviolet ray and hot grade in an imperial examination 1 substrate.In Fig. 2 (F),, the stickability of the 1st bonding agent is reduced, make the 2nd adhesive hardens by irradiation ultraviolet radiation.In addition, both can from be stripped from the layer irradiation ultraviolet radiation up and down, also can be from an irradiation ultraviolet radiation.Shown in Fig. 2 (G), peel off the 2nd substrate then.

Like this, owing to can peel off simultaneously and fix by same operations such as irradiation ultraviolet radiation or heating, so can simplify stripping process.

Shown in Fig. 2 (H), pass through irradiation ultraviolet radiation or heating or washing then and remove destressing mitigation part.In addition, in order more correctly to remove, preferably use the plasma clean of argon gas and oxygen or Bel's crin (ベ Le Network リ Application) to clean.Can use and stress can be relaxed the material that part is removed by the operation identical with the 1st bonding agent this moment.Promptly as stress being relaxed the material that part is removed, also can carry out the peeling off of the 1st bonding agent, the sclerosis of the 2nd bonding agent, stress simultaneously and relax removing of part by ultraviolet ray.Shown in Fig. 2 (I), finish to be stripped from the transfer printing of course the 3rd substrate then.

By adopting this stripping means, can simplify working process at the stripping process of removing and hardening of the bonding agent that repeats to be used for transfer printing.And stripping process of the present invention can be peeled off the ground formation of the high qualification rate of energy all sidedly.By peeling off all sidedly, a plurality of semiconductor elements can be on a large substrate, formed, and the chamfering cut off by each semiconductor device can be carried out, can expect that cost reduces.In addition,, add and use low-cost film substrate, therefore can realize the cost degradation of display device owing to can utilize the 1st substrate etc. in the present invention again.

Consequently: have light-emitting device, liquid crystal indicator and other display device attenuation of this TFT etc., even drop also be difficult for broken, and in light weight.In addition, can under curved surface and special-shaped shape, show.

The invention effect

According to the present invention, by same operation (ultraviolet ray irradiation and heating), that can carry out bonding agent peels off (also comprising adhesive reduction) and sclerosis, and the manufacturing process of stripping process even display device is simplified.In addition, if produce a plurality of display device by large substrate, then not only can be correctly and carry out stripping process of the present invention easily, can also utilize reliever etc. correctly and easily to peel off and transfer printing process.Like this,, the worker ordinal number is reduced by stripping process of the present invention, can also a large amount of production display device in high qualification rate ground.

Description of drawings

Fig. 1 is the figure of explanation stripping process of the present invention.

Fig. 2 is the figure of explanation stripping process of the present invention.

Fig. 3 is the figure that makes light-emitting device according to stripping process of the present invention.

Fig. 4 is the figure that makes light-emitting device according to stripping process of the present invention.

Fig. 5 is the figure that makes liquid crystal indicator according to stripping process of the present invention.

Fig. 6 is the figure that makes liquid crystal indicator according to stripping process of the present invention.

Fig. 7 is the figure that the chamfering of stripping process of the present invention is adopted in explanation.

Fig. 8 is the figure of explanation electronic equipment of the present invention.

Fig. 9 is the figure of explanation electronic equipment of the present invention.

Figure 10 is the figure of the TEM photo of the section after expression is peeled off according to the present invention.

Figure 11 is the figure of the TEM photo of the section after expression is peeled off according to the present invention.

Figure 12 is the figure that makes light-emitting device according to stripping process of the present invention.

Figure 13 is the figure that makes light-emitting device according to stripping process of the present invention.

Figure 14 is the figure that makes liquid crystal indicator according to stripping process of the present invention.

Figure 15 is the figure that makes liquid crystal indicator according to stripping process of the present invention.

The best mode that carries out an invention

Below according to the description of drawings embodiments of the present invention.In addition, at the whole accompanying drawings that are used for illustrating embodiment,, omit the explanation of its repetition to a part or to have the part of said function attached with identical symbol.

(embodiment 1)

State after present embodiment forms near light-emitting component and liquid crystal cell is as being stripped from layer, peels off and the concrete stripping process during transfer printing and an example of utilizing stripping process of the present invention to make the light-emitting device of upper surface outgoing describe.

Shown in Fig. 3 (A), on the 1st substrate 200, form metal film 201.The 1st substrate uses the glass substrate about 0.5～1.0mm in the present embodiment.As metal film, can use the individual layer formed as the alloy material or the compound-material of major component by the element that is selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir or with above-mentioned element or their lamination.As the manufacture method of metal film, can use sputtering method, on the 1st substrate, form as target with metal.In addition, the thickness of metal film is taken as 10nm～200nm, preferred 50nm～75nm.

If on metal film, use alloy (for example, the alloy of W and Mo: the W of above-mentioned metal _XMo _1-X), then can in film forming room, dispose the alloys target of a plurality of targets of the 1st metal (W) and the 2nd metal (Mo) or the 1st metal (W) and the 2nd metal (Mo), adopt sputtering method to form.Like this,, can control stripping process, enlarge process redundancy by the formation of suitable setting metal film.For example, if use metal alloy, then, can control the temperature of heat treated and whether need to carry out heat treated by each metal ratio of components of control alloy.

Also can use the metal film of nitrogenize (metal nitride film) substituted metal film.In addition, also can in metal film, add nitrogen and oxygen.For example, inject nitrogen and oxygen at the metal film intermediate ion, perhaps making film forming room is nitrogen and oxygen atmosphere, adopts sputtering method to form metal film, in addition, also can use metal nitride as target.

Then, on metal film 201, make the counterdie 207 of lamination form semiconductor film between the centre.That is to say, can the multilayer setting be the dielectric film of representative with the counterdie also between metal film and semiconductor film.Counterdie can use silicon oxide film, silicon nitride film or oxidized silicon nitride film etc. to contain the individual layer or the stack membrane of the dielectric film of silicon.The SiO of the 150nm～200nm that adopts sputtering method formation is set on metal film in the present embodiment ₂And at SiO ₂The SiON of 80～100nm that last employing CVD method forms.Adopt counterdie can prevent that impurity is diffused into the semiconductor film from substrate and metal film.

In addition, when through above-mentioned operation, then on metallic film surface, form the oxide film (oxidized metal film) 202 that contains this metal.The thickness that can make the oxidized metal film is 0.1nm～1 μ m, preferred 0.1nm～100nm, more preferably 0.1nm～5nm.In addition, also can on metal film, directly make oxide film.

After this, carry out heat treated as required.Pass through heat treated, can make the oxidized metal membrane crystallization, produce crystal distortion and lattice imperfection (point defect, line defect, planar defect (for example planar defect of the shear surface generation on the crystallography that forms by the oxygen vacancies gathering), expansion defective), become the state of easily peeling off.

In addition, also can think: by heat treated, the redox reaction that the hydrogen diffusion that contains owing to semiconductor film causes forms the different oxidized metal of crystalline state, becomes the easier state of peeling off.

In addition, the heat treated that above-mentioned heat treated can the crystallization of double as semiconductor film.Promptly the semiconductor film by forming on the heating of metal film can form the crystallinity semiconductor film, and carries out the crystallization of oxidized metal film.

In order to improve the crystallinity of semiconductor film, also can promote to heat-treat behind the metallic element (being typically the Ni element) of crystallization in coating, perhaps after heat treated, irradiating laser.In addition, use under the situation of the metallic element that promotes crystallization,, therefore, require to remove by air-breathing operation and etching work procedure then because this metallic element is unnecessary for device.

Then, by desired shape that the crystallinity semiconductor film is graphical, adopt the nitride film that contains the oxide film of silicon or contain silicon, form gate insulating film.On the crystallinity semiconductor film, make gate insulating film, form gate electrode, this gate electrode as mask, is formed extrinsic region between the centre.Also can on gate electrode, adopt the rhythmo structure of W and TaN, source electrode and drain region, low concentration impurity zone (LDD zone) and the low concentration impurity zone (GOLD zone) overlapping with gate electrode are set in extrinsic region.Form TFT203 then.

Then form the electrode 204 that connects source wiring or drain electrode wiring.And, promptly cover the two ends of adjacent electrode for the end of coated electrode 204, form the dielectric film 205 that comprises organic material and inorganic material.In order to prevent the intrusion of moisture and oxygen, on dielectric film, form diaphragm 206 then.

As described above, form TFT as semiconductor element.Be illustrated for the active matrix type display that on each pixel, forms TFT, but much less, also can for the passive display device.In addition, both can be bottom gate type TFT, also can be top grid type TFT.

In addition, the semiconductor element of being stripped from layer also can be TFT with amorphous semiconductor film, organic tft, thin film diode, photo-electric conversion element, sensistor element or the sensing element (being typically the pressure sensitive fingerprint sensor that uses polysilicon) etc. that are become by the PIN structure of silicon.

Shown in Fig. 3 (B), form luminescent layer 210 and negative electrode 211 then.Luminescent layer both can form each RGB luminescent layer, also can form white luminous layer, and the color converting layer by colored filter etc. carries out multicolor displaying.Under the situation of upper surface outgoing, negative electrode can for example be formed by ITO with the material with light transmission; Under the situation of lower surface outgoing, can form with metal films such as MgAg.In addition, best, in atmosphere, do not expose to the open air and form continuously until luminescent layer and negative electrode.

Include in formation before or after the luminescent layer of organic compounds, best, carry out heating in vacuum, carry out degasification.In addition, because the luminescent layer 210 that includes organic compounds as thin as a wafer, therefore best, the surface of the 1st electrode is smooth, can implement planarization by chemically reaching the processing of mechanically grinding.

In order to improve the cleanliness on electrode 204 surfaces, also can before forming, luminescent layer be used to clean the cleaning (brush cleans or Bel's crin cleans) and the plasma clean of foreign matter (rubbish etc.).At this moment, also can remove up hill and dale adhering to of the bonding agent that is used for transfer printing.

As follows, peel off then.In addition, in the present embodiment, explain for forming situation about peeling off behind the light-emitting component (luminescent layer and negative electrode and anode), but also can after forming electrode 204, peel off.Promptly can be by suitable decision moment of peeling off of implementer.

Shown in Fig. 3 (C), on negative electrode, form diaphragm 215.Diaphragm can form the film that contains carbon and nitrogen of DLC, CN, SiN etc.

Form ultraviolet ray (UV) and prevent film 216 on diaphragm, the protection luminescent layer is avoided ultraviolet irradiation.Especially, because in the light-emitting device of upper surface outgoing, ultraviolet ray must be radiated on the luminescent layer, therefore ultraviolet ray is set prevents film (UV prevents film), prevents the luminescent layer deterioration.Be that UV prevents that film from can use the film (thin slice) with following character, it does not make the wavelength in UV zone see through (not seeing through more than at least 90%), and make light from luminescent layer, promptly (400nm～1 μ m, the wavelength of preferred 450nm～800nm) sees through in the zone of visible light path degree.For example, can use the organic resin film that adds ultraviolet light absorber, the concrete mylars such as polyethylene terephthalate and tygon-2,6-naphthalate that are to use.Mylar can adopt formation such as known extrusion.In addition, also can use the organic resin film that will absorb the structure after ultraviolet layer and other layer laminate.

Shown in Fig. 3 (D), adopt whirl coating then, form water soluble resin 217 and relax part as stress.Stress relaxes part and can harden by heating or irradiation ultraviolet radiation.In addition, if use the material of irradiation ultraviolet radiation sclerosis, when irradiation ultraviolet radiation above stress mitigation part, can prevent film protection luminescent layer by UV.

Then, in order to peel off easily, can to cut off or peeling off cut on the interface.Though diagram does not use a kind of line locking device as cutting machine to separate the 1st substrate, be stripped from layer and water soluble resin in the present embodiment, and the section of peeling off the interface is exposed.

Shown in Fig. 3 (E), the 2nd substrate 220 is set on water soluble resin then.(thickness is 1.0～1.5mm), adopts double sticky tape 221 to fix to use the quartz base plate that does not have cementability in the present embodiment on the 2nd substrate.The double sticky tape that uses in stripping process has by irradiation ultraviolet radiation or heating or is dipped in makes stickability reduce in the liquid such as water, or the character of peeling off certainly.The double sticky tape that uses an irradiation ultraviolet radiation, stickability just to reduce in the present embodiment.

Also can use ultraviolet hardening resin, specifically, use bonding agents such as epoxide resin adhesive, thermosetting resin and resin additive to replace double sticky tape.In addition, also can use double sticky tape and bonding agent etc. under the 1st substrate, fixedly quartz base plate is as assisting base plate.

Shown in Fig. 3 (F), adopt physical means to separate the 1st substrate then and have the layer of being stripped from of semiconductor element.Though illustrated is to peel off on the interface of oxidized metal film and metal film, but be at this moment in the film of the oxidized metal film of crystallization or the two-sided interface of oxidized metal film, promptly separate at the interface of oxidized metal film and metal film or oxidized metal film and the interface of being stripped from layer etc.If separate the inside at the oxidized metal film, then the oxidized metal disperses attached to the lower surface of being stripped from layer sometimes.In addition, if separate on the interface of oxidized metal film and metal film or oxidized metal film and the interface of being stripped from layer, then the oxidized metal film exists only in the lower surface of being stripped from layer sometimes, perhaps exists only in the upper surface of metal film.If the oxidized metal thing disperses or attached to the lower surface of being stripped from layer, then both can by etching or chemically or grinding physically remove the oxidized metal thing, also can keep the state that adheres to.

Shown in Fig. 3 (G), will be stripped from layer then and be fixed on the film substrate 230 as the 3rd substrate.If film substrate does not have stickability, then fix by the 2nd bonding agent 231.Ultraviolet hardening resin can be used to the 2nd bonding agent, specifically, bonding agent or double sticky tapes such as epoxide resin adhesive, thermosetting resin and resin additive can be used.Use the water-insoluble bonding agent that hardens by the ultraviolet ray irradiation as the 2nd bonding agent in the present embodiment.Promptly consider to remove the situation of destressing mitigation part and consider that stress relaxes the character of part, the 2nd bonding agent must use the material that does not carry out peeling off.Certainly stress mitigation part is not necessarily removed.

That is to say the reason bonding agent identical that present embodiment adopts the stickability of the 1st bonding agent to reduce or peel off with the reason of the 2nd adhesive hardens.For example, make the bonding agent that stickability reduces and the bonding agent of sclerosis,, just can carry out peeling off and on the 3rd substrate, fixing of the 2nd substrate, can simplify working process then by once ultraviolet ray irradiation if use by the ultraviolet ray irradiation.

Shown in Fig. 3 (H), separate the 2nd substrate then.At this moment, because the stickability of the 1st bonding agent reduces, therefore can simply and correctly peel off.

Shown in Fig. 3 (I), then remove water soluble resin.Invade in the pure water in order to remove water soluble resin in the present embodiment, make the layer of being stripped from that is fixed on the 3rd substrate.So only remove water soluble resin.On the UV diaphragm, form diaphragm seal 232 then, will be stripped from layer transfer printing on the 3rd substrate, finish the light-emitting device of upper surface outgoing.

In addition, relax part, can use the plasma clean of argon gas and oxygen or Bel's crin to clean in order to remove the 1st and the 2nd bonding agent and stress more accurately.

As described above, by the stripping process of having simplified, can form light-emitting device with TFT of on thin film based, forming etc.Consequently: even a kind of slim, in light weight light-emitting device also not fragile and that have flexibility that drops can be provided.

In addition, also the various uses according to light-emitting device can be provided with a plurality of of TFT etc. and be stripped from layer transfer printing on film substrate.For example, also can form the layer of being stripped from of TFT that TFT that pixel portions uses and driving circuit use, with the regulation zone of its transfer printing at film substrate.

In addition, the situation of the light-emitting device of upper surface outgoing has been described in the present embodiment, but, also can be suitable for the present invention certainly for the light-emitting device of lower surface outgoing.

(embodiment 2)

Present embodiment is that state after forming near light-emitting component and liquid crystal cell is as being stripped from layer, peel off and the situation of transfer printing, stripping process when employing applies ultraviolet ray and heat with the stickability of control bonding agent and one of the light-emitting device example that forms the lower surface outgoing describes, in addition, omit the operation identical and the explanation of material with embodiment 1.

At first same with embodiment 1, to diaphragm 215 formation (Fig. 4 (A)).But, therefore in electrode 204, must use material with light transmission owing to be the light-emitting device of lower surface outgoing.In addition, stress also can be set relax part, but not be provided with especially in the present embodiment.

Shown in Fig. 4 (B), then use double sticky tape 221 as bonding agent, the 2nd substrate 220 is fixed on the diaphragm 215, peel off the 1st substrate 200 then.

Shown in Fig. 4 (C), then will adhere to by bonding agent 231 and be stripped from layer down as the film substrate 230 of the 3rd substrate.In the present embodiment, adopt, make ultraviolet ray on one side therefore shine, Yi Bian heat from the lower surface of film substrate because of heating reduces stickability or the double sticky tape peeled off and adopt the bonding agent that harden by ultraviolet ray.Can certainly be from the two sides irradiation ultraviolet radiation of substrate.In addition, ultraviolet ray sees through under the situation of electrode, then also can shine from the top of the 2nd substrate.Certainly, also can use because of ultraviolet ray reduces adhesion or the double sticky tape peeled off and use the bonding agent that hardens because of heating, be suitable from the top irradiation ultraviolet radiation of the 2nd substrate.

As present embodiment, by ultraviolet ray irradiation and heat,, also can in same operation, peel off and harden even the stickability of double sticky tape 221 reduces and the reason of the reason peeled off and adhesive hardens is different, can simplify stripping process.

Shown in Fig. 4 (D), peel off the 2nd substrate then.Shown in Fig. 4 (E), form diaphragm seal 232 then, finish the light-emitting device of lower surface outgoing.

As described above, by the stripping process of having simplified, can be as light-emitting device with TFT of on film substrate, forming etc.Consequently: even a kind of slim, in light weight light-emitting device also not fragile and that have flexibility that drops can be provided.

In addition, the situation for the light-emitting device of lower surface outgoing is illustrated in the present embodiment, but for the light-emitting device of upper surface outgoing, also can be suitable for the present invention certainly.In addition, for the light-emitting device of upper surface outgoing,, UV can be set prevent film in order to prevent the deterioration of luminescent layer.

(embodiment 3)

In the present embodiment for the state after the formation such as near semiconductor element, electrode and dielectric film as being stripped from layer, peel off and the manufacture method of the light-emitting device of transfer printing describes.

Shown in Figure 12 (A), on the 1st substrate 200, form metal film 201.The 1st substrate uses the glass substrate about 0.5～1.0mm in the present embodiment.Can use the individual layer formed as the alloy material or the compound-material of major component by the element that is selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir or with above-mentioned element or their lamination as metal film.Adopt the manufacture method of sputtering method, metal can be formed on the 1st substrate as target as metal film.In addition, the thickness of metal film is taken as 10nm～200nm, preferred 50nm～75nm.

If on metal film, use the alloy (alloy of W and Mo: the W for example of above-mentioned metal _XMo _1-X), then can in film forming room, dispose the alloys target of a plurality of targets or the 1st metal (W) and the 2nd metal (Mo) of the 1st metal (W) and the 2nd metal (Mo), adopt sputtering method to form.Like this,, can control stripping process, enlarge process redundancy by the formation of suitable setting metal film.For example, when using metal alloy, the ratio of components of each metal by the control alloy can be controlled the temperature of heat treated and whether need to carry out heat treated.

Also can use the metal film of nitrogenize (metal nitride film) substituted metal film.In addition, also can in metal film, add nitrogen and oxygen.For example, inject nitrogen and oxygen at the metal film intermediate ion, perhaps making film forming room is nitrogen and oxygen atmosphere, adopts sputtering method to form metal film, also can use metal nitride as target in addition.

Then, on metal film 201 with the counterdie 207 of lamination between the centre, form semiconductor film.That is to say which floor also can be set is the dielectric film of representative with the counterdie between metal film and semiconductor film.Counterdie can use the individual layer or the stack membrane of the dielectric film that contains silicon of silicon oxide film, silicon nitride film or oxidized silicon nitride film etc.The SiO of the 150nm～200nm that adopts sputtering method formation is set on metal film in the present embodiment ₂And at SiO ₂The SiON of 80～100nm that last employing CVD method forms.Adopt counterdie can prevent that impurity is diffused into the semiconductor film from substrate and metal film.

In addition, if through above-mentioned operation, then on metallic film surface, form the oxide film (oxidized metal film) 202 that contains this metal.The thickness that can make the oxidized metal film is 0.1nm～1 μ m, preferred 0.1nm～100nm, more preferably 0.1nm～5nm.In addition, also can on metal film, directly make oxide film.

As required, carry out heat treated then.Pass through heat treated, can make the oxidized metal membrane crystallization, produce crystallization distortion and lattice imperfection (point defect, line defect, planar defect (for example oxygen vacancies is assembled and planar defect that shear plane on the crystallography that forms causes), expansion defective), become the state of easily peeling off.

In addition, can think also that by heat treated, the redox reaction that the hydrogen diffusion that contains owing to semiconductor film causes forms the different oxidized metal of crystalline state, becomes the easier state of peeling off.

In addition, above-mentioned heat treated can double as makes the heat treated of semiconductor film crystallization.Promptly the semiconductor film that forms on metal film by heating can form the crystallinity semiconductor film, and carry out the crystallization of oxidized metal film.

In order to improve the crystallinity of semiconductor film, also can promote to carry out heat treated behind the metallic element (being typically the Ni element) of crystallization, perhaps irradiating laser after heat treated in coating.In addition, use under the situation of the metallic element that promotes crystallization,, require to remove by air-breathing operation and etching work procedure then because this metallic element is unnecessary for device.

Then, make the crystallinity semiconductor film graphical, adopt the nitride film that contains the oxide film of silicon or contain silicon, form gate insulating film by desired shape.On the crystallinity semiconductor film, make gate insulating film, form gate electrode, this gate electrode as mask, is formed extrinsic region between the centre.Also can on gate electrode, adopt the rhythmo structure of W and TaN, source electrode and drain region, low concentration impurity zone (LDD zone) and the low concentration impurity zone (GOLD zone) overlapping with gate electrode are set in extrinsic region.Form TFT203 then.

Then form the electrode 204 that connects source wiring or drain electrode wiring.For the end of coated electrode 204, promptly cover the two ends of adjacent electrode, form dielectric film 205 then with organic material and inorganic material.As dielectric film, except that propylene film (containing the photonasty propylene), can use polyimide, polyamide, BCB organic materials such as (benzocyclobutenes), perhaps except that the oxidation silicon fiml, use silicon nitride film, nitriding and oxidizing silicon fiml and coating formula silicon oxide layer (SOG:Spin On Glass) etc. to contain the inorganic material of silicon.Adopt the photonasty propylene in the present embodiment.After dielectric film forms, adopt etching method to form peristome, electrode 204 is exposed.Then,, particularly comprise in the dielectric film of organic material, therefore, on dielectric film, form diaphragm 206 owing to water that becomes the light-emitting component worsening reason and oxygen etc. are easily invaded dielectric film.Diaphragm can form the film that contains carbon and nitrogen of DLC, CN, SiN etc.,

As described above, form TFT as semiconductor element.Be illustrated for the active matrix type display that on each pixel, forms TFT, but can certainly for the passive display device.

In addition, the semiconductor element of being stripped from layer also can be organic tft, thin film diode, photo-electric conversion element, sensistor element or the sensing element (being typically the pressure sensitive fingerprint sensor that uses polysilicon) etc. that are become by the PIN structure of silicon.

As described below, peel off then.In addition, describe for forming situation about peeling off behind electrode and the dielectric film etc. in the present embodiment, but also can after dielectric film form back, formation luminescent layer, peel off.Promptly can be by suitable decision moment of peeling off of implementer.Shown in Figure 12 (B), cover dielectric film and diaphragm then, adopt whirl coating, form water soluble resin 210 and relax part as stress.Can make stress relax the part sclerosis by heating or irradiation ultraviolet radiation.In addition, the material that hardens for using irradiation ultraviolet radiation if worry the semiconductor element deterioration, then can adopt ultraviolet ray to prevent that film (UV prevents film) from protecting.

UV prevents that film from can use the film (thin slice) with following character, it does not make the wavelength of ultraviolet range (UV zone) see through (not seeing through more than at least 90%), and make light from luminescent layer, promptly (400nm～1 μ m, the wavelength of preferred 450nm～800nm) sees through in the zone of visible light path degree.For example, can use the organic resin film that adds ultraviolet light absorber, the concrete mylars such as polyethylene terephthalate and tygon-2,6-naphthalate that are to use.Mylar can adopt formation such as known extrusion.In addition, also can use the organic resin film that will absorb the structure after ultraviolet layer and other layer laminate.

Then, carry out, can cut off or peeling off cut on the interface in order to make to peel off easily.Though not shown, use a kind of line locking device to cut off the 1st substrate, be stripped from layer and water soluble resin in the present embodiment as cutting machine, the section of peeling off the interface is exposed.

Shown in Figure 12 (C), the 2nd substrate 211 is set on water soluble resin then.(thickness is 1.0～1.5mm), fixes with double sticky tape 212 to use the quartz base plate that does not have cementability in the present embodiment on the 2nd substrate.The double sticky tape that uses in the stripping process has because of irradiation ultraviolet radiation or heating or is dipped in the character that makes stickability reduce or peel off certainly in the liquid such as water.The double sticky tape that adopts an irradiation ultraviolet radiation stickability just to reduce in the present embodiment.

Also can use ultraviolet hardening resin, concrete is that bonding agents such as epoxide resin adhesive, thermosetting resin and resin additive replace double sticky tape.In addition, also can under the 1st substrate, use fixedly quartz base plate such as double sticky tape and bonding agent as assisting base plate.

Shown in Figure 12 (D), adopt physical means to separate the 1st substrate then and have the layer of being stripped from of semiconductor element.Though illustrated is to peel off on the interface of oxidized metal film and metal film, but be at this moment in the film of the oxidized metal film of crystallization or the two-sided interface of oxidized metal film, promptly separate at the interface of oxidized metal film and metal film or oxidized metal film and the interface of being stripped from layer etc.If separate the inside at the oxidized metal film, then the oxidized metal disperses attached to the lower surface of being stripped from layer sometimes.In addition, if separate on the interface of oxidized metal film and metal film or oxidized metal film and the interface of being stripped from layer, then the oxidized metal film exists only in the lower surface of being stripped from layer sometimes, perhaps exists only in the upper surface of metal film.If the oxidized metal thing disperses or attached to the lower surface of being stripped from layer, then both can by etching or chemically or grinding physically remove the oxidized metal thing, also can keep the state that adheres to.

Shown in Figure 12 (E), then will be stripped from layer and be fixed on the film substrate 214 as the 3rd substrate.If film substrate does not have stickability, then fix by the 2nd bonding agent 215.In the 2nd bonding agent, ultraviolet hardening resin be can use, specifically, bonding agent or double sticky tapes such as epoxide resin adhesive, thermosetting resin and resin additive used.

As the 2nd bonding agent, use the water-insoluble bonding agent that hardens because of the ultraviolet ray irradiation in the present embodiment.Promptly consider to remove the situation of destressing mitigation part and the character that stress relaxes part, the 2nd bonding agent must use the material of not peeling off.Certainly stress mitigation part can not necessarily be removed.

That is to say the reason bonding agent identical that present embodiment adopts the stickability of the 1st bonding agent to reduce or peel off with the reason of the 2nd adhesive hardens.For example,,, can carry out peeling off and fixing to the 3rd substrate of the 2nd substrate, can simplify working process by once ultraviolet ray irradiation if use because of the ultraviolet ray irradiation makes the bonding agent that stickability reduces and the bonding agent of sclerosis.

Shown in Figure 12 (F), peel off the 2nd substrate then.This moment since the stickability of the 1st bonding agent reduce, therefore can be easily and correctly peel off.

Shown in Figure 12 (H), then remove water soluble resin.In order to remove water soluble resin in the present embodiment, the layer of being stripped from that will be fixed on the 3rd substrate is dipped in the pure water.Like this, only remove water soluble resin.

In addition, relax part, can use the plasma of argon gas and oxygen or Bel's crin to clean in order to remove the 1st and the 2nd bonding agent and stress more accurately.

Shown in Figure 12 (I), on diaphragm, form luminescent layer 220 and negative electrode 221 then.At this moment,, can prepare supporting substrate in addition, be fixed in the evaporation that carries out luminescent layer and negative electrode under the state of supporting substrate in order to reduce the instability of film substrate.Form luminescent layer by vacuum evaporation in the present embodiment.

Luminescent layer both can form each RGB luminescent layer, also can form white luminous layer, and carried out multicolor displaying by color converting layers such as colored filters.Under the situation of upper surface outgoing, negative electrode can for example be formed by ITO with the material with light transmission; Under the situation of lower surface outgoing, negative electrode can form with metal films such as MgAg.

Include in formation before or after the luminescent layer of organic compounds, preferably carry out heating in vacuum and carry out degasification.In addition, because the luminescent layer 210 that includes organic compounds as thin as a wafer, therefore the surface of best the 1st electrode is smooth, can carry out planarization by chemically reaching the processing (being typically CMP technology etc.) of mechanically grinding.

In order to improve the cleanliness factor on electrode 204 surfaces, also can before forming, luminescent layer be used to clean the cleaning (brush cleans or Bel's crin cleans) and the plasma clean of foreign matter (rubbish etc.).At this moment, also can remove up hill and dale adhering to of the bonding agent that is used for transfer printing.

Shown in Figure 12 (J), on negative electrode, form diaphragm 222 then, form diaphragm seal 223.In addition, when on diaphragm seal and negative electrode, forming the space,, can carry out the nitrogen displacement, enclose drying agent etc. in order to prevent the deterioration of luminescent layer etc.In addition, best, exposed to weather and forming continuously not until luminescent layer, negative electrode and diaphragm.

Like this, will be stripped from layer and be transferred on the film substrate, finish the light-emitting device of upper surface outgoing.Consequently: even a kind of slim, in light weight light-emitting device also not fragile and that have flexibility that drops can be provided.

In addition, a plurality of layers of being stripped from that also various uses according to light-emitting device can be provided with TFT etc. are transferred on the film substrate.For example also can form pixel portions with TFT and driving circuit with the layer of being stripped from of TFT, be transferred on the regulation zone of film substrate.

In addition, the situation of the light-emitting device of upper surface outgoing has been described in the present embodiment, but, also can have adopted the present invention certainly for the light-emitting device of lower surface outgoing.

(embodiment 4)

State after forming near semiconductor element, electrode and dielectric film in the present embodiment is as being stripped from layer, peel off, the situation of transfer printing, adopt to impose ultraviolet ray and heat forms the lower surface outgoing with the adhesive stripping process of control bonding agent one of light-emitting device example and describe.In addition, omit the operation identical and the explanation of material with embodiment 3.

At first same with embodiment 1, to diaphragm 206 formation (Figure 13 (A)).But, therefore in electrode 204, must use material with light transmission owing to be the light-emitting device of lower surface outgoing.In addition, stress also can be set relax part, but not be provided with especially in the present embodiment.

Shown in Figure 13 (B), then use double sticky tape 212 as bonding agent, the 2nd substrate 211 is fixed on diaphragm 206, peel off the 1st substrate 200.

Shown in Figure 13 (C), will adhere to as the film substrate 214 of the 3rd substrate by bonding agent 215 then and be stripped from layer down.Owing to using in the present embodiment, therefore from lower surface one side irradiation ultraviolet radiation of film substrate, Yi Bian heat because of heating reduces stickability or the double sticky tape peeled off and use the bonding agent that harden because of ultraviolet ray.Can certainly be from the two sides irradiation ultraviolet radiation of substrate.In addition, if ultraviolet ray sees through electrode, then can be from the top irradiation of the 2nd substrate.Certainly, also can use because of ultraviolet ray makes stickability reduction or the double sticky tape of peeling off and uses the bonding agent that hardens because of heating, from the top irradiation ultraviolet radiation of the 2nd substrate, be suitable.

As present embodiment, by carrying out ultraviolet ray irradiation, heating,, also can in same operation, peel off and harden even the reason of the reduction of the stickability of double sticky tape 221 and reason of peeling off and adhesive hardens is different, can simplify stripping process.

Shown in Figure 13 (D), peel off the 2nd substrate then.Shown in Figure 13 (E), then form luminescent layer 220, negative electrode 211.And on negative electrode, form diaphragm 222, and diaphragm seal 223 is set, finish the light-emitting device of lower surface outgoing.

As described above, according to the stripping process of having simplified, can be as light-emitting device with TFT of on film substrate, forming etc.Consequently: even a kind of slim, in light weight light-emitting device also not fragile and that have flexibility that drops can be provided.

In addition, the situation of the light-emitting device of lower surface outgoing has been described in the present embodiment, but, also can be suitable for the present invention certainly for the light-emitting device of upper surface outgoing.In addition, UV then can be set prevent film because of the ultraviolet ray irradiation makes the semiconductor element deterioration if worry.

(embodiment 5)

State after forming near light-emitting component and liquid crystal cell in the present embodiment is as being stripped from layer, peels off and the situation of transfer printing, and the situation that adopts heating to form liquid crystal indicator with the adhesive stripping process of control bonding agent describes.

Shown in Fig. 5 (A), on the 1st substrate 300, form metal film 301.The 1st substrate and metal film can adopt the material of explanation in the embodiment 1.On glass substrate, form the alloy film of Mo and W in the present embodiment.At this moment, in film forming room, can dispose the alloys target of a plurality of targets or the 1st metal (W) and the 2nd metal (Mo) of the 1st metal (W) and the 2nd metal (Mo), adopt sputtering method and form.Like this,, can control stripping process, enlarge process redundancy by the composition of suitable setting metal film.

Then, same with embodiment 1, make counterdie 307 between the centre, form TFT303, form a electrode 304 that wiring is connected again with TFT.

In addition, through the stage after forming semiconductor film and counterdie, form the oxide with this metal on metal film, promptly the oxidized metal film 302.Be provided with the counter substrate 305 of colored filter etc. then, between the 1st substrate and counter substrate, form liquid crystal 306.On counter substrate, can use film substrate.Liquid crystal can and drip in a vacuum by vacuum impregnation and form.In addition, liquid crystal material can use known liquid crystal, for example: dispersion type liquid crystal, strong medium liquid crystal, anti-strong medium liquid crystal etc.And, as dispersion type liquid crystal, be to a certain degree high liquid crystal for viscosity, the method for dripping is suitable.

In addition, when making liquid crystal indicator,,, compare, can form or scatter liners many about 3 times with normal conditions still in order to keep the interval of flexible base, board in order to keep substrate to form liner at interval or to scatter liner.In addition, compare, can make liner more flexibly with situation about using in the common glass substrate.In addition since film substrate also have can be flexible, liner is not moved and fix.

In addition, if on the film substrate that uses as counter substrate and the 3rd substrate, see through moisture and impurity, then can cover with inorganic material such as organic material such as polyvinyl alcohol (PVA), ethylene-vinyl alcohol copolymer or poly-silazane, aluminium oxide, monox, silicon nitride or the barrier film of forming by their lamination.

Shown in Fig. 5 (B), then adopt whirl coating to form water soluble resin 310 and relax part as stress.

Shown in Fig. 5 (C), then the 2nd substrate 311 is fixed on the water soluble resin by double sticky tape 312.Then, the 1st substrate is separated by physical means such as adhesive tapes.At this moment, in the film of the oxidized metal film of crystallization or the interface on the two sides of oxidized metal film, i.e. the interface of oxidized metal film and metal film or oxidized metal film and be stripped from the interfacial separation of layer.If separate the inside at the oxidized metal film, then the oxidized metal thing disperses attached to the lower surface of being stripped from layer sometimes.In this case, the oxidized metal thing both can be removed by etching and grinding, also can keep the state that adheres to.

Shown in Fig. 5 (D), adhesion is equivalent to the film substrate 315 of the 3rd substrate then.Use the bonding agent 316 that hardens because of heating in the present embodiment, the fixed film substrate.At this moment, double sticky tape 312 uses to have because of heating reduces stickability or the adhesive tape of the character peeled off certainly, and can utilize this operation to carry out the sclerosis of bonding agent and peeling off of double sticky tape simultaneously.Consequently: can simplify manufacturing process.

Above-mentioned operation also can be undertaken by the ultraviolet ray irradiation, at this moment, also can use double sticky tape of peeling off by the ultraviolet ray irradiation and the bonding agent that hardens by the ultraviolet ray irradiation.

Shown in Fig. 5 (E), peel off the 2nd substrate then.Because the stickability of double sticky tape can reduce, therefore can peel off easily and equably.

Shown in Fig. 5 (F), then be dipped in the pure water, remove water soluble resin.Polaroid etc. suitably is set then, finishes liquid crystal indicator with the TFT that on film substrate, forms.

As described above, adopt the manufacturing process of having simplified, can make liquid crystal indicator with the TFT that on film substrate, forms.Consequently: even a kind of slim, in light weight liquid crystal indicator also not fragile and that have flexibility that drops can be provided.

(embodiment 6)

State after forming near light-emitting component and liquid crystal cell in the present embodiment is as being stripped from layer, peel off and the situation of transfer printing, the situation that adopts not only heating but also irradiation ultraviolet radiation to form liquid crystal indicator to control adhesive stripping process describes.In addition, omit the operation identical and the explanation of material with embodiment 5.

At first same with embodiment 3, on the 1st substrate 300, form metal film 301 and oxidized metal film 302, counterdie 307, TFT303, electrode 304, form counter substrate 305 and liquid crystal 306 (Fig. 6 (A)) again.

Shown in Fig. 6 (B), then the 2nd substrate 311 is adhered on the counter substrate by double sticky tape 312.Then, adopt physical means to peel off the 1st substrate.In addition, stress also can be set relax part, but not be provided with especially in the present embodiment.

Shown in Fig. 6 (C), then pass through bonding agent 316 adhesive-film substrates 315 as the 3rd substrate.Heat whole base plate in the present embodiment on one side,, make adhesive hardens on one side from the two sides irradiation ultraviolet radiation.Simultaneously, double sticky tape 312 is by heating or ultraviolet ray irradiation, and stickability reduces or peels off certainly.That is to say, the invention is characterized in: utilize this operation, fix the double sticky tape of the 2nd substrate and peel off, the adhesive hardens of fixed film substrate.In addition, owing to heat simultaneously and the operation of irradiation ultraviolet radiation, double sticky tape both can have the character of peeling off because of heating, also can have the character of peeling off because of the ultraviolet ray irradiation, can enlarge process redundancy.

Shown in Fig. 6 (D), peel off the 2nd substrate then, finish liquid crystal indicator.

As described above, adopt the manufacturing process simplified, can make liquid crystal indicator with TFT of on film substrate, forming etc.Consequently: even a kind of slim, in light weight liquid crystal indicator also not fragile and that have flexibility that drops can be provided.

(embodiment 7)

State after forming near light-emitting component and liquid crystal cell in the present embodiment is as being stripped from layer, peels off and the situation of transfer printing, and the situation that adopts heating to form liquid crystal indicator with the control adhesive stripping process of bonding agent describes.

Shown in Figure 14 (A), on the 1st substrate 300, form metal film 301.The 1st substrate and metal film can adopt the material of explanation in the embodiment 1.On glass substrate, form the alloy film of Mo and W in the present embodiment.At this moment, can in film forming room, dispose the alloys target of a plurality of targets or the 1st metal (W) and the 2nd metal (Mo) of the 1st metal (W) and the 2nd metal (Mo), adopt sputtering method to form.Like this,, can control stripping process, enlarge process redundancy by the composition of suitable setting metal film.

Then, same with embodiment 1, form TFT303, form a electrode 304 that wiring is connected again with TFT.

In addition, through the stage after forming semiconductor film and counterdie 307, form the oxide of this metal on metal film, promptly the oxidized metal film 302.

Shown in Figure 14 (B), adopt whirl coating then, form water soluble resin 310 and relax part as stress.

Shown in Figure 14 (C), then adopt double sticky tape 312 as bonding agent, the 2nd substrate 311 is fixed on the water soluble resin.Adopt physical means to separate the 1st substrate then.At this moment, in the film of the oxidized metal film of crystallization or the interface on the two sides of oxidized metal film, i.e. the interface of oxidized metal film and metal film or oxidized metal film and be stripped from the interfacial separation of layer.If separate the inside at the oxidized metal film, then the oxidized metal thing disperses sometimes attached to the lower surface of being stripped from layer.At this moment, also can remove the oxidized metal thing, also can keep the state that adheres to by etching and grinding.

Shown in Figure 14 (D), adhesion is equivalent to the film substrate 315 of the 3rd substrate then.Adopt the bonding agent 316 that hardens because of heating in the present embodiment, the fixed film substrate.At this moment, double sticky tape 312 uses to have because of heating reduces stickability or the adhesive tape of the character peeled off certainly, utilizes this operation, can carry out the sclerosis of bonding agent and peeling off of double sticky tape simultaneously.Consequently: can simplify manufacturing process.

Above-mentioned operation also can be undertaken by the ultraviolet ray irradiation.At this moment, can use double sticky tape of peeling off by the ultraviolet ray irradiation and the bonding agent that hardens by the ultraviolet ray irradiation.

Shown in Figure 14 (E), peel off the 2nd substrate then.Because the stickability of double sticky tape can reduce, therefore can peel off easily and equably.Shown in Figure 14 (F), then be dipped in the pure water, remove water soluble resin.

Shown in Figure 14 (G), be provided with the counter substrate 305 of colored filter etc. then, between the 1st substrate and counter substrate, form liquid crystal 306.In addition, though not shown, polaroid can suitably be set.On counter substrate, can use film substrate.Liquid crystal can adopt vacuum impregnation and drip in a vacuum and form.In addition, liquid crystal material can use known liquid crystal, for example: dispersion type liquid crystal, strong medium liquid crystal, anti-strong medium liquid crystal etc.And as dispersion type liquid crystal, for the to a certain degree high liquid crystal of viscosity, the method for dripping is suitable.

In addition, when making liquid crystal indicator,, form liner or scatter liner, but, compare, can form or scatter liners many about 3 times with normal conditions in order to keep the interval of flexible base, board in order to keep substrate at interval.In addition, compare, can make liner more flexibly with situation about on common glass substrate, using.In addition, because film substrate also has pliability, liner is not moved and fix.

In addition, if on the film substrate that uses as counter substrate and the 3rd substrate, see through moisture and impurity, then can cover with inorganic material such as organic material such as polyvinyl alcohol (PVA), ethylene-vinyl alcohol copolymer or poly-silazane, aluminium oxide, monox, silicon nitride or the barrier film of forming by their lamination.

As described above, the stripping process of utilize simplifying can be made the liquid crystal indicator with TFT of forming etc. on film substrate.Consequently: even a kind of slim, in light weight liquid crystal indicator also not fragile and that have flexibility that drops can be provided.

(embodiment 8)

State after forming near light-emitting component and liquid crystal cell in the present embodiment is as being stripped from layer, the situation that adopts not only heating but also irradiation ultraviolet radiation to form liquid crystal indicator to control adhesive stripping process describes, and omits the operation identical with embodiment 7 and the explanation of material in addition.

At first, same with embodiment 3, on the 1st substrate 300, form metal film 301 and oxidized metal film 302, counterdie 307, TFT303, electrode 304 (Figure 15 (A)).

Shown in Figure 15 (B), adopt double sticky tape 312 as bonding agent then, the 2nd substrate 311 is adhered on the electrode.Adopt physical means to peel off the 1st substrate then.In addition, stress also can be set relax part, but not be provided with especially in the present embodiment.

Shown in Figure 15 (C), then adopt bonding agent 316, adhesive-film substrate 315 is as the 3rd substrate.One cross the heating whole base plate in the present embodiment, on one side from the two sides irradiation ultraviolet radiation, the sclerosis bonding agent.Simultaneously, double sticky tape 312 is because of heating or ultraviolet ray irradiation, and stickability reduces, perhaps from peeling off.

Promptly the invention is characterized in: utilize this operation, fix the double sticky tape of the 2nd substrate and peel off, the adhesive hardens of fixed film substrate.In addition, owing to heat simultaneously and the operation of irradiation ultraviolet radiation, double sticky tape both can have the character of peeling off because of heating, also can have the character of peeling off because of the ultraviolet ray irradiation, can enlarge process redundancy.

Shown in Figure 15 (D), adopt physical means to peel off the 2nd substrate then.Shown in Figure 15 (E), then form the counter substrate 320 that is provided with colored filter etc., form liquid crystal 321.

As described above, adopt the manufacturing process simplified, can make liquid crystal indicator with TFT of on film substrate, forming etc.Consequently: even a kind of slim, in light weight liquid crystal indicator also not fragile and that have flexibility that drops can be provided.

(embodiment 9)

Describe for the method for making the chamfering of display device by large substrate (for example 600 * 720mm substrate) in the present embodiment with a plurality of semiconductor elements.

Fig. 7 (A) is illustrated in the state that forms a plurality of display device or semiconductor element group 501 on the 1st substrate 500 with dielectric films such as counterdie 510 between the centre.

Display device is the display device beyond light-emitting device, the liquid crystal indicator, in addition, also can be the electronic equipment with the semiconductor element that forms according to stripping process of the present invention.

The semiconductor element group constitutes display part, driving circuit portion etc., and forms according to stripping process of the present invention.

By the 1st substrate is maximized, make a plurality of display device or semiconductor element group, thereby the raising production, but, therefore can use the device with decompression (reliever) shown in Fig. 7 (B) because the 1st substrate and the 2nd substrate may be difficult to evenly carry out sometimes.The sectional drawing of Fig. 7 (B) expression a-a ', the operation of the 2nd substrate is peeled off in expression.Display device or the semiconductor element group 501 who forms between the centre with metal film 502, oxidized metal film 503 promptly is set on the 1st substrate 500 and the 2nd substrate 505 is set on display device or semiconductor element group.Preferably, stress can be set and relax part 504 to cover display device or semiconductor element group.The reliever 508 that on the 1st substrate, fixedly has the emptying aperture 506 that is connected with pump 507 then.Between the 1st substrate and reliever, also can dispose assisting base plate etc.In addition, best, reliever is also disposed, is fixed on the 2nd substrate-side.Like this, become decompression or vacuum state in the emptying aperture, can adsorb the 1st substrate and the 2nd substrate, can evenly carry out peeling off of the 1st substrate with certain attractive force.In addition, the section of release surface is exposed, with cut on section such as scratch machine.

Then, carry out transfer printing, but also can under the state of absorption the 2nd substrate, carry out to the 3rd substrate.In advance the 3rd substrate is fixed on the reliever in this case, the 2nd substrate that transfer printing has been adsorbed carries out ultraviolet ray irradiation and heating, carries out peeling off and hardening of bonding agent.At this moment, reliever can use and see through ultraviolet material formation.Because the film substrate that is equivalent to the 3rd substrate is flexible, therefore also be difficult to planar fixed sometimes, but undertaken by reliever etc. evenly fixing, can be correctly and carry out transfer printing simply and peel off even the manufacturing of display device.

Present embodiment also can make up embodiment 1 to 4 any mode and carry out.

(embodiment 10)

The present invention can be applied to the display part of various electronic equipments.As electronic equipment, can enumerate portable data assistance (but portable phone, removable computer, slim computer Wearable computer, portable game machine or e-book etc.), video camera, digital camera, eyepiece escope, display, navigational system etc.The particular instantiation of these electronic equipments is in Fig. 8.

Fig. 8 (A) is a removable computer, and it comprises body 4101, stylus 4102, display part 4103, operating key 4104, external interface 4105 etc.Display device of the present invention is used for display part 4103.According to the present invention, even a kind of also non-damageable removable computer that drops in light weight, slim can be provided.In addition, because display device of the present invention is rich flexible, so display part also can have curved surface.

Fig. 8 (B) is an electronic book reader, and it comprises display part 4201 etc.Display device of the present invention is used for display part 4202.According to the present invention, even a kind of also non-damageable electronic book reader that drops in light weight, slim can be provided.In addition, because display device of the present invention is rich flexible, therefore can be as the display part of the e-book of reading type and convoluted e-book etc.

Fig. 8 (C) is an IC-card, and it comprises body 4301, display part 4302, integrated circuit portion 4303 etc.Display device of the present invention is used for display part 4302.According to the present invention, can on extremely thin IC-card, display part be set.In addition, the semiconductor element of integrated circuit portion also can use stripping means manufacturing of the present invention.

Fig. 8 (D) is the sheet type portable phone, and it comprises body 4401, display part 4403, sound input part 4404, sound force outlet part 4405, switch 4406, external interface 4407 etc.By external interface 4407, can connect the earphone 4408 of other preparation.What use in display part 4403 is the display device according to the present invention's formation that has the touch-screen type of sensor, by touch the touch operating key 4409 that shows in display part 4403, can carry out a succession of operation.In addition, as the various signal processing circuits that are arranged in the body 4401, can use the thin film circuit that forms according to the present invention.According to the present invention, even a kind of also non-damageable portable phone that drops in light weight, slim can be provided.

Fig. 8 (E) is a robot, and it comprises wrist 4501, body portion 4502, head 4503 and display part 4504 etc., and display device of the present invention is used for display part 4504.Fig. 8 (F) is the advertising tower 4602 that is provided with display part 4601.Display device of the present invention is used for display part 4601.In addition, display device of the present invention also can be fixed on the window etc. of automobile.Like this, because display device of the present invention has soft character, therefore, can bring into play on the matrix that can be fixed on toroidal and the effect of utilizing.

As described above, range of application of the present invention is extremely wide, can be used in the electronic equipment of all spectra.Especially, realize that slim and lightweight the present invention is quite effective in the electronic equipment of Fig. 8 (A)～(F).

(embodiment 11)

Present embodiment describes with the screen that driving circuit, storage circuit and the lift-launch of controlling this pixel portions have the CPU of control device and arithmetic unit for have pixel portions on same insulating surface.Be that stripping process of the present invention also can form driving circuit beyond the display part and logical circuit etc.

The outward appearance of Fig. 9 indication panel, this screen have the pixel portions 3000 by a plurality of pixels of rectangular configuration on substrate 3009.The scan line drive circuit 3001, the signal-line driving circuit 3002 that have control pixel portions 3000 in the periphery of pixel portions 3000.In pixel portions 3000 according to from driving circuit signal supplied display image.

Counter substrate also can only be arranged on pixel portions 3000 and the driving circuit 3001,3002, also can be arranged on whole.But on the CPU 3008 that worries heating, preferably connect heat sink and dispose counter substrate.

In addition, above-mentioned screen has the code translator 3004,3005 of control VRAM3003 in the VRAM3003 (video random access memory, picture show private memory) of control Driver Circuit 3001,3002, the periphery of VRAM3003.In addition, the code translator 3007 and the CPU3008 that have control RAM3006 in the periphery of RAM3006, RAM3006.

All elements that constitute the circuit on the substrate 3009 are to form by poly semiconductor (polysilicon), compare with amorphous semiconductor, and its field-effect mobility is higher, and turn-on current is bigger, and therefore a plurality of circuit that are implemented on the same insulating surface are integrally formed.In addition, pixel portions 3001 and driving circuit 3001,3002 and other circuit are at first made on supporting substrate, then by adopting stripping method of the present invention to peel off, adhere, are implemented in integrally formed on the flexible base plate 3009.In addition, though do not limit the structure of a plurality of pixels that are disposed at pixel portions,, also can omit the configuration of VRAM3003 and RAM3006 by on each of a plurality of pixels, disposing SRAM respectively.

(embodiment)

[embodiment 1]

The substrate-side after the tem observation of expression employing is in the present embodiment peeled off and the result of the oxide skin(coating) in the semiconductor film side.

Lamination forms following film successively on glass substrate, that is: adopt sputtering method form 50nm the W film, adopt sputtering method form 200nm silicon oxide film, form the oxidized silicon nitride film of 100nm, form the amorphous silicon film of 50nm as semiconductor film using plasma CVD method as counterdie using plasma CVD method.Then, carry out 500 degree, 1 hour and 550 degree, 4 hours thermal treatment, adopt the method for the physics of teflon adhesive tape etc. to peel off.The W film of substrate-side and the TEM photo of oxide skin(coating) are Figure 10 at this moment, and the TEM photo of the oxide skin(coating) of semiconductor film side and silicon oxide film is Figure 11.

Oxidized metal film and metal film are conjointly residual unevenly in Figure 10.Similarly, the oxidized metal film is also conjointly residual unevenly with silicon oxide film in Figure 11.By two TEM photo susceptible of proofs: peel off in the layer of oxidized metal film and carry out on two interfaces, in addition we know: oxidized metal film and metal film and silicon oxide film are adhered, and be residual unevenly.

Then, adopt XPS to measure the substrate-side after peeling off and peel off after the release surface of semiconductor film side.The wave spectrum that its result is obtained carries out the waveform separation, and the detection elements and the quantitative result that obtain thus are as follows:

Semiconductor film side W1 (tungsten W) and W2 (tungsten oxide WO after peeling off _X, X is about 2) and be 0%, W3 (tungsten oxide WO _x, 2＜X＜3) and be 16%, W4 (tungsten oxide WO ₃Deng) be 84%, relative therewith, be 44% at substrate-side W1, W2 is 5%, and W3 is 10%, and W4 is 42%.

Therefore as can be known: when in the film of the interface of the interface of oxidized metal film and metal film or oxidized metal film and silicon oxide film or oxidized metal film, peeling off, W1 and W2 all remain in substrate-side, 2/3 of W4 remains in the semiconductor film side, and 1/3 remains in substrate-side.Promptly can think: in the film of oxidized metal film, particularly easily peel off from the border of W2 and W3 or W4.

In addition, do not have W2 in the semiconductor film side in this experiment, and W2 also can consider on the contrary that attached to substrate-side W2 does not have the situation of W2 in substrate-side attached to the semiconductor film side.

That is to say, can think: for adopting the present invention to make display device etc., how much be attached at the oxidized metal film under the state of semiconductor film side when the film substrate transfer printing, film substrate and be arranged at individual layer under the semiconductor film or the counterdie of lamination between the oxidized metal film that is scattered here and there.

Claims (44)

1. display device, comprising

Be located at the dielectric film that contains silicon on the film substrate,

Be located at the semiconductor film on the described dielectric film that contains silicon with extrinsic region,

Be located at the 1st electrode of described extrinsic region, and

Be located at and make 2nd electrode of luminescent layer on described the 1st electrode, it is characterized in that between the centre:

Between described film substrate and the described dielectric film that contains silicon, the oxidized metal is arranged.

2. display device, comprising

Be located at the dielectric film that contains silicon on the film substrate,

Be located at the semiconductor film on the described dielectric film that contains silicon with extrinsic region,

Be located at the 1st electrode of described extrinsic region, and

Be located at and make 2nd electrode of luminescent layer on described the 1st electrode, it is characterized in that between the centre:

Between described film substrate and the described dielectric film that contains silicon, oxidized metal and bonding agent are arranged.

3. display device, comprising

Be located at the dielectric film that contains silicon on the film substrate,

Be located at the semiconductor film on the described dielectric film that contains silicon with extrinsic region,

Be located at the 1st electrode of described extrinsic region,

Be located at and make 2nd electrode of luminescent layer on described the 1st electrode between the centre, and

The UV that is located on described the 2nd electrode prevents film, it is characterized in that:

Between described film substrate and the described dielectric film that contains silicon, the oxidized metal is arranged.

4. display device, comprising

Be located at the dielectric film that contains silicon on the film substrate,

Be located at the semiconductor film on the described dielectric film that contains silicon with extrinsic region,

Be located at the 1st electrode of described extrinsic region,

Be located at and make 2nd electrode of luminescent layer on described the 1st electrode between the centre, and

The UV that is located on described the 2nd electrode prevents film, it is characterized in that:

Between described film substrate and the described dielectric film that contains silicon, oxidized metal and bonding agent are arranged.

5. display device, comprising

Be located at the dielectric film that contains silicon on the film substrate,

Be located at the semiconductor film on the described dielectric film that contains silicon with extrinsic region,

Be located at the 1st electrode of described extrinsic region, and

Be located at and make 2nd electrode of liquid crystal layer on described the 1st electrode, it is characterized in that between the centre:

Between described film substrate and the described dielectric film that contains silicon, the oxidized metal is arranged.

6. display device, comprising

Be located at the dielectric film that contains silicon on the film substrate,

Be located at the semiconductor film on the described dielectric film that contains silicon with extrinsic region,

Be located at the 1st electrode of described extrinsic region, and

Be located at and make 2nd electrode of liquid crystal layer on described the 1st electrode, it is characterized in that between the centre:

Between described film substrate and the described dielectric film that contains silicon, oxidized metal and bonding agent are arranged.

7. as any described display device in the claim 1～6, it is characterized in that:

The described dielectric film that contains silicon comprises any of silicon oxide film, silicon nitride film and oxidized silicon nitride film.

8. display device as claimed in claim 7 is characterized in that:

Described silicon oxide film adopts sputtering method to form.

9. as any described display device in the claim 1～8, it is characterized in that:

The described dielectric film that contains silicon is as the counterdie of described semiconductor film and bring into play function.

10. as any described display device in the claim 1～9, it is characterized in that:

Described semiconductor film comprises amorphous silicon film or crystallinity silicon fiml.

11., it is characterized in that as any described display device in the claim 1～10:

Above or below described semiconductor film, gate electrode is arranged.

12., it is characterized in that as any described display device in the claim 1～11:

Described metal is the alloy material of major component or individual layer that compound-material is formed or their lamination by the element that is selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir or with described element.

13., it is characterized in that as any described display device in the claim 1～11:

Described oxidized metal film is WO ₂Or WO ₃

14. a stripping means,

On the 1st substrate, form semiconductor element,

The 2nd substrate is fixed on the described semiconductor element,

Separate described the 1st substrate, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

By irradiation ultraviolet radiation, carry out the separation of described the 2nd substrate and fixing of described the 3rd substrate simultaneously.

15. a stripping means,

On the 1st substrate, form semiconductor element,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described semiconductor element,

Separate described the 1st substrate, adopt the 2nd bonding agent, the 3rd substrate is fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

By irradiation ultraviolet radiation, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

16. a stripping means,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described semiconductor element,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

17. a stripping means,

On the 1st substrate, form semiconductor element,

The 2nd substrate is fixed on the described semiconductor element,

Separate described the 1st substrate, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

By heating, carry out the separation of described the 2nd substrate and fixing of described the 3rd substrate simultaneously.

18. a stripping means,

On the 1st substrate, form semiconductor element,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described semiconductor element,

Separate described the 1st substrate, adopt the 2nd bonding agent, the 3rd substrate is fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

By heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

19. a stripping means,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described semiconductor element,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

20. a stripping means,

On the 1st substrate, form semiconductor element,

The 2nd substrate is fixed on the described semiconductor element,

Separate described the 1st substrate, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

By irradiation ultraviolet radiation and heating, carry out the separation of described the 2nd substrate and fixing of described the 3rd substrate simultaneously.

21. a stripping means,

On the 1st substrate, form semiconductor element,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described semiconductor element,

Separate described the 1st substrate, adopt the 2nd bonding agent, the 3rd substrate is fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

By irradiation ultraviolet radiation and heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

22. a stripping means,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described semiconductor element,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation and heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

23., it is characterized in that as any described stripping means in the claim 14～22:

Before peeling off described the 1st substrate, cut off described the 1st substrate, described metal film, described semiconductor element, described the 1st bonding agent and described the 2nd substrate, the section of release surface is exposed.

24., it is characterized in that as any described stripping means in the claim 14～23:

Described the 1st bonding agent comprises double sticky tape, ultraviolet exfoliated bonding agent, heat-releasable bonding agent or water soluble adhesive.

25., it is characterized in that as any described stripping means in the claim 14～24:

Above or below described semiconductor element, carry out described ultraviolet irradiation.

26., it is characterized in that as any described stripping means in the claim 14～25:

Between described semiconductor element and described the 2nd substrate, form stress and relax part.

27., it is characterized in that as any described stripping means in the claim 14～26:

Photo-electric conversion element, sensistor element or sensing element that described semiconductor element is TFT, organic tft, thin film diode, become by the PIN structure of silicon.

28. the manufacture method of a display device,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Form the 1st electrode that is connected with described semiconductor element,

Form the dielectric film of the end that covers described electrode,

Between adjacent described dielectric film, form luminescent layer,

On described luminescent layer, form UV and prevent film,

Adopt the 1st bonding agent, the 2nd substrate be fixed on described UV prevent on the film,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation or heating, the stickability of described the 1st bonding agent is reduced or peel off with the sclerosis of described the 2nd bonding agent and carry out simultaneously.

29. the manufacture method of a display device,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Form the electrode that is connected with described semiconductor element,

Form the dielectric film of the end that covers described electrode,

Between adjacent described dielectric film, form luminescent layer,

On described luminescent layer, form UV and prevent film,

Prevent to form on the film stress at described UV and relax part,

Adopt the 1st bonding agent, the 2nd substrate be fixed on described stress relax on the part,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation or heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

30. the manufacture method of a display device,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Form the electrode that is connected with described semiconductor element,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described electrode,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate,

Form the dielectric film of the end that covers described electrode,

Between adjacent described dielectric film, form luminescent layer, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation or heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

31. the manufacture method of a display device,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Form the electrode that is connected with described semiconductor element,

On described electrode, form stress and relax part,

Adopt the 1st bonding agent, the 2nd substrate be fixed on described stress relax on the part,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate,

Form the dielectric film of the end that covers described electrode,

Between adjacent described dielectric film, form luminescent layer, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation or heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

32. the manufacture method as any described display device in the claim 28～31 is characterized in that:

On described semiconductor element, form UV and prevent film.

33. the manufacture method of display device as claimed in claim 32 is characterized in that:

Described UV prevents that film has the organic resin that contains ultraviolet light absorber.

34. the manufacture method as any described display device in the claim 28～33 is characterized in that:

Described light-emitting device is the upper surface outgoing luminous from the top of described luminescent layer.

35. the manufacture method of a display device,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Form the electrode that is connected with described semiconductor element,

Relatively form counter substrate with described the 1st substrate,

Between described the 1st substrate and described counter substrate, form liquid crystal,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described counter substrate,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation or heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

36. the manufacture method of a display device,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Form the electrode that is connected with described semiconductor element,

Relatively form counter substrate with described the 1st substrate,

Between described the 1st substrate and described counter substrate, form liquid crystal,

On described counter substrate, form stress and relax part,

Adopt the 1st bonding agent, the 2nd substrate be fixed on described stress relax on the part,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation or heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

37. the manufacture method of a display device,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Form the electrode that is connected with described semiconductor element,

Adopt the 1st bonding agent, the 2nd substrate be fixed on the described electrode,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate,

Relatively form counter substrate with described the 3rd substrate,

Between described the 3rd substrate and described counter substrate, form liquid crystal, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation or heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

38. the manufacture method of a display device,

On the 1st substrate, form metal film,

On described metal film, form semiconductor element,

Form the electrode that is connected with described semiconductor element,

On described electrode, form stress and relax part,

Adopt the 1st bonding agent, the 2nd substrate be fixed on described stress relax on the part,

Separate described the 1st substrate,

Adopt the 2nd bonding agent, the 3rd substrate be fixed under the described semiconductor element,

Separate described the 2nd substrate,

Relatively form counter substrate with described the 3rd substrate,

Between described the 3rd substrate and described counter substrate, form liquid crystal, it is characterized in that:

Conjointly form the oxidized metal film with described metal film,

By irradiation ultraviolet radiation or heating, the stickability of carrying out described the 1st bonding agent simultaneously reduces or peels off sclerosis with described the 2nd bonding agent.

39. the manufacture method as any described display device in the claim 35～38 is characterized in that:

Described liquid crystal adopts the vacuum impregnation or the method for dripping to form.

40. the manufacture method as any described display device in the claim 35～39 is characterized in that:

Before peeling off described the 1st substrate, cut off described the 1st substrate, described metal film, described semiconductor element, described the 1st bonding agent and described the 2nd substrate, the section of release surface is exposed.

41. the manufacture method as any described display device in the claim 35～40 is characterized in that:

Described the 1st bonding agent comprises double sticky tape, ultraviolet exfoliated bonding agent, heat-releasable bonding agent or water soluble adhesive.

42. the manufacture method as any described display device in the claim 35～41 is characterized in that:

Reliever is arranged on the 1st substrate, peels off described the 1st substrate again.

43. the manufacture method as any described display device in the claim 35～42 is characterized in that:

Reliever is arranged on the 2nd substrate, peels off described the 2nd substrate again.

44. the manufacture method as any described display device in the claim 35～43 is characterized in that:

Reliever is arranged on the 2nd substrate, fixes described the 3rd substrate again.

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