CN1680807B - Method for optical memory determining defect detecting mode - Google Patents
Method for optical memory determining defect detecting mode Download PDFInfo
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- CN1680807B CN1680807B CN 200410033530 CN200410033530A CN1680807B CN 1680807 B CN1680807 B CN 1680807B CN 200410033530 CN200410033530 CN 200410033530 CN 200410033530 A CN200410033530 A CN 200410033530A CN 1680807 B CN1680807 B CN 1680807B
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Abstract
A method for deciding defect detection mode by optical storage device includes assigning at least one detection region on optical storage media as data storing region, setting this region to be defect detection mode of write- in or write - in verification based on defect amount, changing the detection region to be defect detection mode of write - in verification when detection mode of write - in is applied as detection region and it is found that detect amount is greater than a preset threshold.
Description
Technical field
The invention relates to a kind of method of optical storage decision defects detection pattern, the method for decision defects detection pattern when particularly data being write optic storage medium about optical storage.
Background technology
When there is defective in certain part of optic storage medium (as CD), for example: surperficial scratch, pollution or inherent structure defective etc., all can cause tentation data correctly to be stored in the optic storage medium of this part.That is, follow-uply read storage and can find that these data are impaired during data and can't read.Defectiveness makes the storage data to read on the optic storage medium in order to avoid, therefore the associated storage media industry is developed a kind of optic storage medium with defect management, the CD-RW of Mount Rainier form for example is comprising normal CD-MRW and the DVD+MRW that uses.
For guaranteeing the memory integrity of desire storage data, be necessary to develop defect detecting technique so that identify the defect part of optic storage medium.This defect detecting technique mainly comprises and writes detection (write defection) and write two kinds of patterns of checking (write verify), wherein writing detecting pattern is the servo defect detection signal that produces when utilizing data to write optic storage medium, compare with a preset threshold value again, shown in step 11, step 12 and step 13 among Fig. 1.If this servo defect detection signal greater than this threshold value, then is converted to this servo defect detection signal one defective EFM (Eight to Fourteen Modulation; The 8-14 modulation) signal is shown in step 14.Afterwards, be flaw block through the compiling of step 15 and with this defective EFM conversion of signals.Also being about to physically, defective addresses changes defective addresses in logic into.When this servo defect detection signal during, then jump to step 16 and continue flow process by step 13 less than this threshold value.If data do not write this optic storage medium yet fully, then get back to step 12 by step 16, after all data storage finish, just enter step 17, and finish whole flow process by step 16.
Fig. 2 is the process flow diagram that writes Validation Mode of known defect detection technique.Shown in step 21, data begin to write optic storage medium, and according to step 22 will be wherein certain partial data write in the block.After this partial data writes, confirm whether can read the data that write again, shown in step 23 from this block.If can't read the data that write then carry out step 24, indicate that this block is a flaw block.On the contrary, if can read the data that write, then directly enter step 25.Confirm in step 25 whether this block all reads, then get back to step 23 repetition above-mentioned steps if fail to run through.Otherwise, then carry out step 26 to confirm whether data all write optic storage medium.After finishing, all data storage could finish whole flow process, shown in step 27; Otherwise just return step 22 to write the data of other parts again.
Writing detecting pattern is directly to utilize data to write the servo defect detection signal and a threshold of fashionable generation, for example uses radio frequency (RF) signal or son bundle additional signal (Sub-Beam AddSignal; Thereby can judge this block apace and whether have defective SBAD).But because the servo defect detection signal is generally the signal of acquisition light reflection, so be difficult to make-be applicable to the optimal threshold of various defectives, for example the cut of different length, fingerprint pollute or scratch all will cause different conditioned reflexes.
Writing Validation Mode is whether the step that writes data by reading exists with the repeated authentication defective, therefore write detecting pattern compared to the single data of step, write Validation Mode and really can effectively differentiate defective, but relatively also need the cost more time because of step is more.
In sum, known defect detecting technique only can be selected separately to write and detect or write Validation Mode execution error detection, therefore can't take into account speed and two kinds of advantages of reliability, also can't be and elasticity is adjusted detecting pattern at the actual defects distribution situation of optic storage medium.
Summary of the invention
The purpose of this invention is to provide a kind of method of optical storage decision defects detection pattern, is to select the defects detection pattern according to optic storage medium actual defects distribution density, therefore can take into account speed and two kinds of advantages of reliability.
For achieving the above object, the present invention discloses a kind of method of optical storage decision defects detection pattern, be applied to not a format or the not clear optic storage medium of defect distribution information, this method comprises the following step: at least one detection zone that distributes this optic storage medium is with as data storage areas; Set this detection zone and be one and write the defects detection pattern of detection, and data are write in this at least one detection zone with this defects detection pattern that writes detection; And if the defective cumulative amount of finding arbitrary this detection zone at data writing process, then changes the defects detection pattern of this defects detection into the one defects detection pattern that writes checking greater than a preset threshold value.
For achieving the above object, the present invention also discloses a kind of method of optical storage decision defects detection pattern, be applied to a formatted optic storage medium, this method comprises the following step: at least one detection zone that distributes this optic storage medium is with as data storage areas; Write down interior defects count of this at least one detection zone and position in a defect map; If this defect map shows defects count in this detection zone less than a preset threshold value, then set this detection zone and be one and write the defects detection pattern of detection, and write detecting pattern with this data are write in this detection zone; If this defect map shows defects count in this detection zone greater than a preset threshold value, then set this detection zone and be one and write the defects detection pattern of checking, and data are write in this detection zone with this defects detection pattern that writes checking; And if when data writing process is found arbitrary this detection zone defective cumulative amount greater than this threshold value, the defects detection mode altering that then this is write detection is the defects detection pattern that writes checking.
Description of drawings
Fig. 1 is known to write the process flow diagram that detecting pattern writes data;
Fig. 2 is known to write the process flow diagram that Validation Mode writes data;
Fig. 3 (a)～3 (c) is the synoptic diagram that data storage areas of the present invention is divided into several detection zones;
Fig. 4 (a)～4 (c) is the explanation synoptic diagram that the present invention determines first preferred embodiment of defects detection pattern;
Fig. 5 is the process flow diagram that the present invention determines first preferred embodiment of defects detection pattern;
Fig. 6 (a)～6 (b) is the explanation synoptic diagram that the present invention determines second preferred embodiment of defects detection pattern; And
Fig. 7 is the process flow diagram that the present invention determines second preferred embodiment of defects detection pattern.
Embodiment
Fig. 3 (a)～3 (c) is the synoptic diagram that data storage areas of the present invention is divided into several detection zones.The structure of optic storage medium 31 mainly comprises Lead-In Area (LI), data storage area (program area) and leading-out zone (LO) from inside to outside, and wherein the data storage area is divided into several data fields (DA) again, shown in Fig. 3 (a).In Fig. 3 (a), each data field DA1～DAn is considered as different detection zone 1 to n respectively.Also visual whole data storage area is single detection zone, shown in Fig. 3 (b).In addition, in each data field, comprise several data packets (packet), and each data packet or several data packets also can be treated as a detection zone, shown in Fig. 3 (c).But the present invention can be applicable to the rewritable optical storage medium of Mount Rainier form, and this kind optic storage medium is inserted a spare area (SA) in the adjacent data interval, can be used to replace data segments with defective with the storage data.
Fig. 4 (a)～4 (c) is the explanation synoptic diagram that the present invention determines first preferred embodiment of defects detection pattern.Present embodiment can be applicable to a formatted optic storage medium, the detection zone of four predetermined storage data is arranged, on this optic storage medium shown in Fig. 4 (a).Since when format just with defects count in the data storage area and location records in a defect map, therefore the defects count of detection zone 1～detection zone 4 can be learnt respectively, wherein the defects count of detection zone 1 and detection zone 4 is less than a threshold value, therefore be set at earlier and write detecting pattern D, shown in Fig. 4 (b).And therefore the defects count of detection zone 2 and detection zone 3 is set at and writes Validation Mode V more than a threshold value.According to the setting pattern of Fig. 4 (b) carry out that data write and the action of defects detection after, when actual defects detects, may find not list in the defective in the former defect map in addition, reason may be the new defective that follow-up improper use causes.If when originally being set at the new number of defects that detection zone 4 add up that writes detecting pattern D, determine that then it is write detecting pattern D changes into and write Validation Mode V, shown in Fig. 4 (c) above this threshold value.
Fig. 5 is the process flow diagram that the present invention determines first preferred embodiment of defects detection pattern.After data write beginning, on optic storage medium, distribute predetermined several detection zones that write, shown in step 50 and 51.Then, format the detection zone of be scheduled on this optic storage medium that writes with writing detecting pattern according to step 52 indication, and with defects count and location records in a defect map, and with the data dump of originally storing in this detection zone.In step 53, utilize the defect distribution situation to decide each detection zone will use on earth and write detecting pattern or write Validation Mode.That is utilize the interior contained defect information of defect map to judge that whether the defects count of each detection zone is greater than a threshold value.If defects count greater than this threshold value, then is set at this detection zone and writes Validation Mode, write detecting pattern otherwise be set at.
When detection zone is set at when writing detecting pattern, when detecting, actual defects to check that whether new defective semi-invariant is greater than this threshold value.If then the defects detection pattern of this detection zone is changed into greater than this threshold value and to write Validation Mode, shown in step 54,55 and 56.If the defective semi-invariant still less than this threshold value, does not then need to change the defects detection pattern.If detection zone is to begin just to be set to write Validation Mode, just do not need the action of execution in step 55 and 56, jump directly to step 57 data are write in this detection zone.After all predetermined data that write all were written in these several detection zones, the action of all flow processs promptly came to an end, and carries out correlation step more one by one otherwise still need to get back to step 54, shown in step 58 and 59.
Fig. 6 (a)～6 (b) is the explanation synoptic diagram that the present invention determines second preferred embodiment of defects detection pattern.Present embodiment can be applicable to not a format or the not clear optic storage medium of defect distribution information.Suppose to have on this optic storage medium the detection zone of eight predetermined storage data, shown in Fig. 6 (a).Because optic storage medium is not format as yet, so the defects count of detection zone 1～detection zone 8 can't be learnt.For simplicity, can all be set at earlier and write detecting pattern D.Carrying out that data write and during the action of defects detection, finding the defective semi-invariant respectively when detection zone 2, detection zone 3 and detection zone 7, determining that then it is write detecting pattern D changes into and write Validation Mode V, shown in Fig. 6 (b) greater than a threshold value.
Fig. 7 is the process flow diagram that the present invention determines second preferred embodiment of defects detection pattern.After data write beginning, the present invention distributed predetermined several detection zones that write on optic storage medium, shown in step 70 and 71.Then, data are write in those detection zones with writing detecting pattern according to step 72 indication.
Write detecting pattern when detection zone is set at, will check that when actual defects detects whether the defective semi-invariant is greater than a threshold value.If then the defects detection pattern of this detection zone is changed into greater than this threshold value and to write Validation Mode, shown in step 73,74 and 75.If still less than this threshold value, then need not change the defects detection pattern when the defective semi-invariant.If detection zone has changed into and has write Validation Mode, then do not need the action of execution in step 74 and 75, jump directly to step 76 data are write in this detection zone.After all predetermined data that write all were written in these several detection zones, the action of all flow processs promptly came to an end, and carries out correlation step more one by one otherwise still need to get back to step 73, shown in step 77 and 78.
Technology contents of the present invention and technical characterstic are open as above, yet those of ordinary skill in the art still may reach openly and do all replacement and modifications that does not deviate from spirit of the present invention based on teaching of the present invention.Therefore, protection scope of the present invention should be not limited to the disclosed content of embodiment, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by accompanying Claim.
Claims (10)
1. the method for optical storage decision defects detection pattern is applied to not a format or the not clear optic storage medium of defect distribution information, and this method comprises the following step:
At least one detection zone that distributes this optic storage medium is with as data storage areas;
Set this detection zone and be one and write the defects detection pattern of detection, and data are write in this at least one detection zone with this defects detection pattern that writes detection; And
If the defective cumulative amount of finding arbitrary this detection zone at data writing process is greater than a preset threshold value, then the defects detection pattern of this defects detection is changed into a defects detection pattern that writes checking.
2. determine the method for defects detection pattern according to the optical storage of claim 1, it comprises the following step in addition:
Write down the defects count of this detection zone in this optic storage medium; And
If the defects count of arbitrary this detection zone then is set at the defects detection pattern that writes detection greater than this threshold value.
3. determine the method for defects detection pattern according to the optical storage of claim 1, wherein this detection zone is to divide according to several data segments of this optic storage medium.
4. according to the method for claim 1 optical storage decision defects detection pattern, wherein this detection zone is to divide according to several data packets of this optic storage medium.
5. according to the method for claim 1 optical storage decision defects detection pattern, wherein the quantity of this detection zone has only one, and it comprises all data storage areas of this optic storage medium.
6. the method for an optical storage decision defects detection pattern is applied to a formatted optic storage medium, and this method comprises the following step:
At least one detection zone that distributes this optic storage medium is with as data storage areas;
Write down interior defects count of this at least one detection zone and position in a defect map;
If this defect map shows defects count in this detection zone less than a preset threshold value, then set this detection zone and be one and write the defects detection pattern of detection, and write detecting pattern with this data are write in this detection zone;
If this defect map shows defects count in this detection zone greater than a preset threshold value, then set this detection zone and be one and write the defects detection pattern of checking, and data are write in this detection zone with this defects detection pattern that writes checking; And
If when data writing process was found arbitrary this detection zone defective cumulative amount greater than this threshold value, the defects detection mode altering that then this is write detection was the defects detection pattern that writes checking.
7. according to the method for the optical storage of claim 6 decision defects detection pattern, it comprises in addition with this and writes the step that detecting pattern formats this data storage areas.
8. determine the method for defects detection pattern according to the optical storage of claim 6, wherein this detection zone is to divide according to several data segments of this optic storage medium.
9. determine the method for defects detection pattern according to the optical storage of claim 6, wherein this detection zone is to divide according to several data packets of this optic storage medium.
10. determine the method for defects detection pattern according to the optical storage of claim 6, wherein the quantity of this detection zone has only one, and it comprises all data storage areas of this optic storage medium.
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| CN 200410033530 CN1680807B (en) | 2004-04-06 | 2004-04-06 | Method for optical memory determining defect detecting mode |
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| CN 200410033530 CN1680807B (en) | 2004-04-06 | 2004-04-06 | Method for optical memory determining defect detecting mode |
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| CN1680807B true CN1680807B (en) | 2010-04-28 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6480446B1 (en) * | 1998-04-20 | 2002-11-12 | Samsung Electronics Co., Ltd. | Recording medium for storing defect management information for recording real time data, defect managing method therefor and real time data recording method |
| CN1381839A (en) * | 2001-03-22 | 2002-11-27 | 株式会社东芝 | Information recording medium device of managing shortage and information regeneration device |
| TW513697B (en) * | 2000-04-08 | 2002-12-11 | Samsung Electronics Co Ltd | Method of verifying defect management area information of disc and test apparatus for performing the same |
| CN1409314A (en) * | 2001-09-26 | 2003-04-09 | 汤姆森许可公司 | Fault detection capable of recording storage medium |
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2004
- 2004-04-06 CN CN 200410033530 patent/CN1680807B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6480446B1 (en) * | 1998-04-20 | 2002-11-12 | Samsung Electronics Co., Ltd. | Recording medium for storing defect management information for recording real time data, defect managing method therefor and real time data recording method |
| TW513697B (en) * | 2000-04-08 | 2002-12-11 | Samsung Electronics Co Ltd | Method of verifying defect management area information of disc and test apparatus for performing the same |
| CN1381839A (en) * | 2001-03-22 | 2002-11-27 | 株式会社东芝 | Information recording medium device of managing shortage and information regeneration device |
| CN1409314A (en) * | 2001-09-26 | 2003-04-09 | 汤姆森许可公司 | Fault detection capable of recording storage medium |
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