CN1598049A - Process for plasma strengthening type chemical vapour phase deposition treatment - Google Patents
Process for plasma strengthening type chemical vapour phase deposition treatment Download PDFInfo
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- CN1598049A CN1598049A CN 03151022 CN03151022A CN1598049A CN 1598049 A CN1598049 A CN 1598049A CN 03151022 CN03151022 CN 03151022 CN 03151022 A CN03151022 A CN 03151022A CN 1598049 A CN1598049 A CN 1598049A
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Abstract
The invention relates to a plasma-strengthening chemical gas phase aggradation method and is used in depositting film on the surface of the semiconductor wafer. It includes: stabilization, inputting the premonitory gas into the reaction kettle; aggradation, inputting the radio frequency energy, premonitory gas and reacton gas into the reaction kettle; passivation, stopping inputting the reaction gas but still inputting the readio frequency energy; and air bleeding, turning off the radio frequency energy, stopping inputting the premonitory gas and pumping the remaining gas out of the reaction kettle. During the passivation, the radio frequency energy is same with or less than that in the aggradation and we still input the premonitory gas for 3 to 15 minutes. Because the invention adds the passivation to it makes the Si which does not react with other on the surface of the wafer continue reacting till the end, it can eliminate the incomplete surface reaction and hanging keys, thus avoids the protuberant block in the film, eliminates the disadvantage and increases the yield.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to a kind of plasma enhanced chemical vapor deposition (PECVD) treatment process.
Background technology
In semiconductor fabrication process,, need on the substrate of wafer, deposit different types of film for making discrete device and unicircuit.In the method for deposit film, plasma enhanced chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition) is a kind of method commonly used.This method is to utilize energy to strengthen the CVD reaction, and except the heat energy of general CVD system, other adds energy of plasma.
Fig. 1 has provided the synoptic diagram of the usual means of PECVD method, and this PECVD device is a PECVD Reaktionsofen.As shown in Figure 1, Reaktionsofen 100 is made of cylindrical glass or aluminium, and all seal with aluminium sheet at two ends up and down.Two blocks of parallel aluminium sheets were used as electrode about cylindrical tube inside had, and top electrode 101 connects radio frequency (RF) voltage, lower electrode 102 ground connection.Two interelectrode radio-frequency voltages will produce plasma discharge.There is a semiconductor wafer 130 to place on the heating base 120, can heat wafer 130 by being positioned at heating base 120 following well heaters, reactant gases is flowed in the Reaktionsofen 100 by the air inlet port around the top electrode 101 110, Reaktionsofen 100 bottoms connect the off-gas pump (not shown), after question response finishes furnace gas are extracted out from production well 111.Certainly, above-mentioned Fig. 1 has just enumerated the example that a semiconductor wafer 130 is arranged, and in fact, method of the present invention is not limited to the number of processed semiconductor wafer, is one or a plurality of all applicable to method of the present invention.
Fig. 2 shows the schema of conventional P ECVD process method step.As can be seen from Figure 2, traditional PECVD method comprises stabilization 210, deposition 220 and 230 3 steps of bleeding.The surface of pending wafer 130 is a substrate layer, and this substrate layer can be silicon or copper or SiO
2, or fluorine doping SiO
2(Fluorine doped SiO
2) or carbon doping SiO
2(Carbon dopedSiO
2) or above mixtures of material.Under request in person simultaneously in conjunction with shown in Figure 1, at first, pending wafer 130 is put on the heating base 120 in the Reaktionsofen 100, begin that then PECVD is carried out on the surface of this wafer 130 and handle.
At first, be stabilization step 210.In this step, do not open the radio frequency energy, just in Reaktionsofen 100, feed precursor gas, for example NH
3, N
2O and N
2Deng, this step probably continued for 10 seconds.By this step, in Reaktionsofen, formed even and stable precursor gas atmosphere, also make pending wafer 130 surface have abundant and contact uniformly with precursor gas around it.
Then, be deposition step 220.In this step, open the radio frequency energy, continue to feed precursor gas, feed reactant gases simultaneously, as SiH
4, trimethyl silane, tetramethylsilane etc.The unlatching of radio frequency energy makes to produce plasma body in Reaktionsofen 100.Ionization takes place in reactant gases under the comprehensive action of energy of plasma and heat energy, unsaturated groups such as the Si dangling bonds that generated and O, the N of generation, H react, and generates SiN, SiO
2, SiON etc., and be deposited on wafer 130 surfaces, form SiN, SiO
2, film such as SiON.
At last, be pump step 230.In this step, close the radio frequency energy, stop the feeding of precursor gas and reactant gases, and extract the residual gas in the Reaktionsofen out Reaktionsofen with off-gas pump.
The defective of above-mentioned conventional P ECVD method is that in above-mentioned pump step 230, radio frequency can be closed, and because of the supply of radio frequency energy is the precondition that makes that reaction is proceeded, so at this moment the deposition process of carrying out in above-mentioned deposition step is stopped suddenly.And the situation of this moment is, also has a lot of not end capped Si keys to be in the film surface that is deposited on the wafer, i.e. Biao Mian reaction does not also stop fully.
Traditional PECVD handles this incomplete surface reaction that is produced, and makes the SiN film surface that obtains in deposition also have the not Si key of end-blocking/suspension.These are the Si key of end-blocking/suspension not, in ensuing thin film deposition steps, just become nucleation site, on these nucleation sites, can have sedimentation rate faster than other positions, cause thereon institute to be covered on sedimentary and form the projection defective in (overlying) film.The via hole that these projections can be covered other fatal defectives and not get through, may cause a lot of defectives the most at last, for example surface leakage and reliability failure are promptly with the dielectric breakdown (TDDB, time dependent dielectric breakdown) of time correlation.
Summary of the invention
In order to overcome above-mentioned deficiency, main purpose of the present invention is exactly that a kind of PECVD method of eliminating the deposit film defective will be provided.
According to purpose of the present invention, the invention provides a kind of plasma enhanced chemical vapor deposition treatment method, be used for deposit film on semiconductor wafer surface, comprise the steps: stabilization step, promptly in Reaktionsofen, feed precursor gas; Deposition step, promptly input radio frequency energy in Reaktionsofen continues to feed precursor gas, feeds reactant gases simultaneously; Passivation step promptly stops to feed reactant gases, but continues the input radio frequency energy; And pump step, promptly close the radio frequency energy, stop to feed precursor gas, with the residual gas in the off-gas pump extraction Reaktionsofen.
Wherein, in above-mentioned passivation step: radio frequency can be identical or lower with the radio frequency energy of described deposition step, can be 5 to 1000 watts; Passivation time is 2 to 100 seconds; Continue in the described passivation step to feed precursor gas and continue 3-15 second; The feeding speed of precursor gas is former flow velocity or 1-2000sccm, and precursor gas is NH
3, N
2O and N
2Mixed gas, reactant gases is SiH
4, trimethyl silane, tetramethylsilane.
The invention has the beneficial effects as follows: because of after deposition step, before the pump step, increased passivation step, make on the wafer film surface unreacted completely the Si key continue reaction until end, therefore can eliminate incomplete surface reaction and dangling bonds, thereby cover the formation of projection in the film on having avoided, and then can eliminate the defective that causes thus, improved the qualification rate of product.
Description of drawings
Fig. 1 is general PECVD schematic representation of apparatus;
Fig. 2 is the schema of conventional P ECVD step that method comprises;
Fig. 3 is the schema according to PECVD step that method comprises of the present invention.
Embodiment
The preferred embodiments of the present invention are described below with reference to accompanying drawings.
PECVD method of the present invention is still used Reaktionsofen 100 as shown in Figure 1.
Fig. 3 is the schema according to PECVD method of the present invention, can find out that by the Fig. 2 that contrasts traditional method PECVD treatment process provided by the invention has added a passivation step with respect to conventional P ECVD method between deposition step and pump step.Below in conjunction with Fig. 3 the concrete steps of PECVD method of the present invention are illustrated.
As can be seen from Figure 3, PECVD treatment process provided by the invention comprises four steps.
It at first is stabilization step 310.In this step, there is not radio frequency to import.Just make for example NH of precursor gas by gas inlet shown in Figure 1 110
3, N
2O and N
2, respectively with 0-2000sccm (standard cubic centimeter per minute, sccm), the flow velocity of 0-5000sccm and 0-10000sccm flow in the Reaktionsofen 100, and make the inlet time of gas continue 10 seconds.
Be deposition step 320 then.In this step, continue in Reaktionsofen 100, to feed precursor gas; Then, insert 5 to 1000 watts radio frequency energy; Then, make reactant gases from the gas inlet shown in Fig. 1 110, for example SiH
4, trimethyl silane, tetramethylsilane flow in the Reaktionsofen 100 with the flow velocity of 5-1000sccm, 5-2000sccm and 5-2000sccm respectively, according to the sedimentary film thickness of expectation, needed depositing time can be from 6 seconds to 100 seconds.
Next be passivation step 330, this step is a key point of the present invention, and the passivation time of this passivation step is 2 to 100 seconds.At this moment, with radio frequency can be adjusted to deposition step 320 in identical or lower radio frequency energy, the radio frequency that adopts in the present embodiment can and stop to feed reactant gases in Reaktionsofen 100 for 1-500 watt, but continues to feed precursor gas and continue 3-15 second with the flow velocity of former flow velocity or 1-2000sccm.
In step 330, the purpose that stops to feed reactant gases is no longer to produce new not end-blocking/suspension Si key in Reaktionsofen.In this case, continue to feed precursor gas, and keep radio frequency can input, just make when step 320 finishes and can continue not end-blocking/suspensions Si key of unreacted residue to react with the precursor gas of feeding.Thereby make deposition step to proceed, till remaining not end-blocking/suspension Si key also total overall reaction technology, so just avoided the generation of incomplete reaction, thereby avoided the defective brought thus.
Be pump step 340 at last.At this moment, radio frequency can be closed, by off-gas pump the residual gas in the Reaktionsofen be extracted out, the pressure in Reaktionsofen is reduced to the 3-100 holder.This step probably needed for 5 seconds.
Adding proposed by the invention the PECVD treatment process of passivation step, be not limited to the SiN depositing of thin film, but be applicable to all processing that contains the Si film.By changing the composition of precursor gas, reactant gases, the adding that the present invention proposes the PECVD treatment process of passivation step can also be used to handle for example SiO
2, SiON, SiOF film or the like, thereby and can reach same avoiding and produce the effect that end-blocking/dangling bonds not cause problem by incomplete reaction.
As can be seen,, the invention provides a kind of PECVD method, it is characterized in that: between deposition step and pump step, added extra plasma body and stopped step, i.e. passivation step with respect to conventional art.In this step, no longer feed reactant gases, and continuation feeds precursor gas, and the input that keeps the radio frequency energy, thereby make the unclosed film surface of reaction in deposition step, promptly the end-blocking key can not continue to finish reaction, thereby has eliminated not end-blocking key, and then can eliminate by the caused problem of end-blocking key not.
Although the present invention describes with reference to its specific preferred embodiment, it should be appreciated by those skilled in the art, under the situation that does not break away from the spirit and scope of the present invention that are defined by the following claims, can carry out the various modifications of form and details to it.
Claims (9)
1. a plasma enhanced chemical vapor deposition treatment method is used for deposit film on semiconductor wafer surface, it is characterized in that: comprise the steps:
Stabilization step promptly feeds precursor gas in Reaktionsofen;
Deposition step, promptly input radio frequency energy in Reaktionsofen continues to feed precursor gas, feeds reactant gases simultaneously;
Passivation step promptly stops to feed reactant gases, but continues the input radio frequency energy; And
Pump step is promptly closed the radio frequency energy, stops to feed precursor gas, with the residual gas in the off-gas pump extraction Reaktionsofen.
2. treatment process as claimed in claim 1 is characterized in that: the radio frequency of described passivation step can be identical or lower with the radio frequency energy of described deposition step.
3. treatment process as claimed in claim 1 is characterized in that: the radio frequency of described passivation step can be 5 to 1000 watts.
4. treatment process as claimed in claim 1 is characterized in that: the passivation time of described passivation step is 2 to 100 seconds.
5. treatment process as claimed in claim 1 is characterized in that: continue to feed precursor gas in the described passivation step and continue 3-15 second.
6. treatment process as claimed in claim 5 is characterized in that: the feeding speed of described precursor gas is former flow velocity or 1-2000sccm.
7. treatment process as claimed in claim 1 is characterized in that: the surface of described semiconductor wafer is silicon or copper or SiO
2, or fluorine doping SiO
2, or carbon doping SiO
2, or above mixtures of material.
8. treatment process as claimed in claim 1 is characterized in that: described precursor gas is NH
3, N
2O and N
2Mixed gas.
9. treatment process as claimed in claim 1 is characterized in that: described reactant gases is SiH
4, trimethyl silane, tetramethylsilane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031510221A CN1313640C (en) | 2003-09-18 | 2003-09-18 | Process for plasma strengthening type chemical vapour phase deposition treatment |
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|---|---|---|---|
| CNB031510221A CN1313640C (en) | 2003-09-18 | 2003-09-18 | Process for plasma strengthening type chemical vapour phase deposition treatment |
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| CN1598049A true CN1598049A (en) | 2005-03-23 |
| CN1313640C CN1313640C (en) | 2007-05-02 |
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| CN100456436C (en) * | 2006-09-18 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | A method and reaction device for reducing creepage current on passivated crystal slice surface |
| CN101333653B (en) * | 2007-06-29 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | Plasma chemical vapor deposition process for preventing generation of bag type defects |
| CN102420109A (en) * | 2011-06-15 | 2012-04-18 | 上海华力微电子有限公司 | Method for improving capacitance uniformity of MIM (Metal-Insulator-Metal) device |
| CN102800569A (en) * | 2012-09-11 | 2012-11-28 | 上海华力微电子有限公司 | Method for forming silicon dioxide film on basis of silane and method for producing semiconductor device |
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| US4987102A (en) * | 1989-12-04 | 1991-01-22 | Motorola, Inc. | Process for forming high purity thin films |
| TW283250B (en) * | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
| US5926689A (en) * | 1995-12-19 | 1999-07-20 | International Business Machines Corporation | Process for reducing circuit damage during PECVD in single wafer PECVD system |
| US6303517B1 (en) * | 1999-07-27 | 2001-10-16 | Ball Semiconductor, Inc. | Fast deposition on spherical-shaped integrated circuits in non-contact CVD process |
| US6287643B1 (en) * | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
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| CN101333653B (en) * | 2007-06-29 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | Plasma chemical vapor deposition process for preventing generation of bag type defects |
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