CN1568035A - Module arrangement of broadband low-noise amplifier device - Google Patents
Module arrangement of broadband low-noise amplifier device Download PDFInfo
- Publication number
- CN1568035A CN1568035A CN 03139756 CN03139756A CN1568035A CN 1568035 A CN1568035 A CN 1568035A CN 03139756 CN03139756 CN 03139756 CN 03139756 A CN03139756 A CN 03139756A CN 1568035 A CN1568035 A CN 1568035A
- Authority
- CN
- China
- Prior art keywords
- circuit
- low noise
- noise amplifier
- matching circuit
- amplifier device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a amplification module with broad band and low noise. The invention includes input matching circuit, source electrode feedback circuit, PHEMT tube of AFT34143 series, output matching circuit, power supply circuit and PCB board. The Input matching circuit output the receiving signal to PHEMT tube. Source electrode feedback circuit connects with PHEMT tube. The Output matching circuit receives the controlling signal of PHEMT tube and output the controlling signal. The Source electrode offer the amplify modulation of broadband and low noise electrical source of filtering by the output matching circuit. This invention combines matching circuit with field effect tube. The device modulation can be used directly without processing of circuit matching and optimize in 1710MHz to 1980MHz.Prossessing better circuit performance in wire production have very broad range of using. Having less configuration size and favorable encapsulation form, the device modulation is beneficial to volume-produce and application.
Description
Technical field
The present invention relates to wireless communication field, relate in particular to the low noise amplifier in the wireless communication field.
Background technology
Low noise amplifier is a Primary Component in the wireless communications products, and it can be applied to receiving system, radar receiving system, the satellite communication receiving system of wireless base station usually.The noise factor of low noise amplifier is related to the quality of the whole noise characteristic of system; The intermodulation characteristic relation of low noise amplifier the antijamming capability of receiving system; Whether the integrated design relation in the broadband of low noise amplifier it and can be applied to flexibly in the product; And the cost of low noise amplifier is related to its application market.
The integrated low-noise amplifier device of present widespread usage, its basic noise coefficient can't satisfy more low noise requirement greater than 1.5dB.Because the receiving sensitivity of communication system is influenced by the noise factor of low noise amplifier mainly, when the reception bandwidth was certain, noise factor was low more, and sensitivity is high more.Take the logarithm and noise factor is the input signal-to-noise ratio of amplifier and the ratio of output signal-to-noise ratio, promptly noise factor is the deterioration amount of amplifier to signal to noise ratio.Amplifier is because the existence of thermal noise, is inevitable to the deterioration of signal to noise ratio.In order to guarantee lower noise factor, amplifier need be selected the low noise field effect transistor, adopt the low noise field effect transistor to constitute amplifier circuit in low noise, can reach noise factor (less than 0.7dB) preferably, but, be applied to product design flexibly, must determine its performance interface, version and packing forms, make it as a kind of integrated device module, Surface Mount is on circuit board neatly.At present in this frequency range of 1710MHz～1980MHz, there is corresponding product in external TYCO company, but, under the identical situation of noise factor, TYCO company like product input vswr is 2.6, the output standing-wave ratio is 1.5, as everyone knows, low noise amplifier is for noise-reduction coefficient, and its input coupling is for the optimum noise coupling, so input vswr just is not easy to reach a comparatively desirable value, and the input vswr design is improper, will have influence on the serviceability of this device,, still can't well satisfy the demand of system for low input vswr though the product input vswr of TYCO company reaches 2.6.And the product cost of TYCO company is higher, and under the situation of extensive demand, economy is relatively poor.
Summary of the invention
Technical problem to be solved by this invention is a kind of improved wideband low noise amplifier device blocks of structure, overcome the shortcoming that noise factor of the prior art is low and input, output standing-wave ratio can not finely be taken into account well, make it to have input vswr preferably, satisfy system requirements, reduce module cost, backward compatible simultaneously.
Core concept of the present invention is that the field effect transistor of wideband low noise amplifier device blocks and optimization of matching circuit thereof are become one, adopt the surface mount packing forms, guarantee that simultaneously this packing forms is compatible mutually with the Q588 wideband low noise amplifier device blocks structure of TYCO company, be beneficial to the alternative use of module.
For achieving the above object, the wideband low noise amplifier device blocks that the present invention constructed comprises with the lower part: input matching circuit, source feedback circuit, ATF34143 Series P HEMT pipe, output matching circuit, power circuit and pcb board; Described input matching circuit received RF input signal outputs to the signal after handling in the described ATF34143 Series P HEMT pipe; Described source feedback circuit comprises first source circuit and second source circuit that structure is identical, is connected with 4 with 2 of described ATF34143 Series P HEMT pipe respectively; Described output matching circuit receives the signal of handling through described ATF34143 Series P HEMT pipe, and the output of the signal after will handling, and described power circuit provides through filtered 5V power supply for described wideband low noise amplifier device blocks through described output matching circuit.
Described input matching circuit further comprises coupling capacitance C1, microstrip transmission line and high Q value inductance L1, and radiofrequency signal is input to described coupling capacitance C1 through microstrip transmission line, and another section of described coupling capacitance C1 arrives ground through inductance L 1.Described inductance L 1 is a high Q value inductance, and described microstrip transmission line live width is 1.4～1.5mm.
Described first source circuit further comprises the source resistance R2 of microstrip transmission line, formation RC parallel network and every straight shunt capacitance C3, described RC parallel network one end links to each other other end ground connection with 4 of described ATF34143 Series P HEMT pipe; Described second source circuit further comprises the source resistance R3 of microstrip transmission line, formation RC parallel network and every straight shunt capacitance C4, described RC parallel network one end links to each other other end ground connection with 2 of described ATF34143 Series P HEMT pipe; Described microstrip transmission line live width is 0.6mm, and line length is 3mm.
Described output matching circuit comprises inductance L 2, capacitor C 6 and microstrip transmission line, and described inductance L 2 one ends link to each other with 3 of described ATF34143 Series P HEMT pipe, and the other end connects described power circuit; Described capacitor C 6 one ends are connected to 3 of described ATF34143 Series P HEMT pipe, other end output signal.Described transmission microstrip line is wide to be 1.4～1.5mm.
Described power circuit comprises resistance R 4, filter capacitor C5 and filter capacitor C7, and described resistance R 4 one ends are connected with filter capacitor C5 with described output matching circuit, an end ground connection; The described filter circuit C5 other end is connected with described filter capacitor C7 with power supply VCC; Described filter capacitor C7 other end ground connection.
The external connecting pipe pin of described pcb board adopts the metal pore-formed realization of hemisection; Its Outside Dimensions is less than 15mm*10mm*5mm; Described pcb board is a double-clad board, and sheet material is FR4, and thickness of slab is 0.8, and dielectric constant is 4.6, the gold-plated and coating soldering-resistance layer of printing board surface.
Because the present invention carries out amplifier circuit in low noise integrated, and match circuit and field effect transistor are combined closely, when 1710MHz～1980MHz use, directly use device blocks and need not to carry out the coupling and the optimization of circuit.Simultaneously, device blocks of the present invention has circuit performance preferably, as low-noise factor, input and output standing-wave ratio preferably and higher intermodulation point, the very wide scope of application is arranged in wireless product.It can be applied to Communications Markets such as the W-CDMA of the PHS of the gsm wireless base station of 1710-1785MHz and repeater thereof, 1850-1920MHz and DECT wireless base station, 1920-1980MHz and repeater thereof; Also can be applied in the radar receiver of corresponding band.
In addition, device blocks of the present invention has the small construction size, and good packing forms is beneficial to the production in enormous quantities and the use of product.
Description of drawings
Fig. 1 is a wideband low noise amplifier device blocks structure chart of the present invention.
Fig. 2 is the circuit diagram of wideband low noise amplifier device blocks of the present invention.
Fig. 3 is the design and simulation figure of wideband low noise amplifier device blocks of the present invention.
Fig. 4 is the structure illustration of wideband low noise amplifier device blocks of the present invention.
Fig. 5 is the two-sided illustration of the PCB of wideband low noise amplifier device blocks of the present invention.
Fig. 6 is the pin illustration of wideband low noise amplifier device blocks of the present invention.
Embodiment
Below in conjunction with accompanying drawing device of the present invention is described further.
As shown in Figure 1, its method for designing of device blocks of the present invention is as follows substantially:
1) selects suitable transistor and circuit form
Device ATF34143 Series P HEMT pipe used in the present invention is mainly used in the business telecommunication aspect of low consumption, its frequency can be applied to VHF～6GHZ scope, packing forms is the SC-70 Surface Mount encapsulation of 4 pin, grid thresholding width is 800 μ m, low noise factor and high intermodulation point can be provided in broad frequency range, can under lower input impedance, be easy to coupling simultaneously.
1) operating state is selected
The operating state of amplifying device is required to decide by noise, gain and output level.For making amplifier have lowest noise, the working point should be according to the minimal noise coefficient, and guarantees have enough gains to select recommended current, and operating current is elected 20～40mA as.
2) judgement of stability
Check stability coefficient K (the source coefficient of stability and load stabilization coefficient), increase source negative feedback, make K＞1, need add two little bands of feedback because actual FET is two source electrodes.
3) input and output matching network
What the present invention selected for use is that the lumped parameter inductance mates.Biasing circuit of the present invention is the automatic biasing form, need not two kinds of form of power.If adopt non-auto bias circuit, input coupling inductance can the adjunction negative supply, and at this moment source electrode needs direct current to ground, can not any resistance of adjunction.
5) device architecture
Device blocks is that SMT installs, and the external connecting pipe pin adopts the metal pore-formed realization of hemisection, and Outside Dimensions is less than 15mm*10mm*5mm.
6) pcb board
In order to prevent interference signal to the influence of LNA, the stability of increase circuit, LNA low noise amplifier device blocks adopts double-sided PCB, and one side is a large tracts of land ground connection, and the pcb board material is FR4, thickness of slab 0.8mm.Gold-plated and the coating soldering-resistance layer of printing board surface.
According to above-mentioned consideration, the device of device blocks of the present invention comprises following components:
1) circuit main devices: the ATF34143 Series P HEMT pipe of AGILENT company.
2) input matching circuit: form by microstrip transmission line, coupling capacitance and ground connection inductance.
3) source feedback circuit: two source electrodes have the source electrode feedback circuit respectively, and the source feedback circuit is made up of microstrip line and RC parallel network.
4) output matching circuit: form by microstrip line, inductance and coupling capacitance.
5) power circuit: form by microstrip line, resistance and two filter capacitors.
6) pcb board.
Figure 2 shows that the circuit structure diagram of wideband low noise amplifier device blocks, radio-frequency input signals at first enters input matching circuit, radiofrequency signal is added to coupling capacitance C1 place through microstrip line, the microstrip transmission line live width is 1.4mm, another section of coupling capacitance connects high Q value inductance L1 to ground, capacitor and inductor polyphone input matching circuit can make the low noise field effect transistor be in optimum noise coupling, noise-reduction coefficient.During design, be optimized design of Simulation, reach the best of noise factor and input vswr by ADS software.
Primary Component ATF34143 Series P HEMT manages, and is mainly used in the business telecommunication aspect of low consumption.Frequency can be applied to VHF～6GHZ scope.The packing forms of ATF34143 is the SC-70 Surface Mount encapsulation of 4 pin.Grid thresholding width is 800 μ m, and low noise factor and high intermodulation point can be provided in broad frequency range, can be easy to coupling simultaneously under lower input impedance.
The source feedback circuit, mainly containing two identical source circuit forms, the microstrip line live width of connection source electrode and feedback circuit and length have more sensitive influence to the stability and the input vswr of circuit, the microstrip line live width is 0.6mm, line length is 3mm, source resistance can be adjusted the static working current of device, mainly influences the high frequency stability of circuit every straight shunt capacitance.
Output matching circuit is made up of inductance L 2, capacitor C 6 and microstrip transmission line, and output transmission microstrip line is wide to be 1.4mm.The gain of match circuit pair amplifier and output standing-wave ratio are influential, in order to reach higher gain, must be optimized value to output matching circuit.
Power circuit is that a resistance R 4 and two filter capacitor C5, C7 form.Realization is to the filter function of 5V power supply.
The pcb board material of this invention is a double-clad board, and sheet material is FR4, and thickness of slab is 0.8, and dielectric constant is 4.6.
What Fig. 3 represented is the design of Simulation and the analysis result of device blocks of the present invention.In the simulation analysis process, mainly adopted following steps:
1) S parameter simulation analysis: in schematic diagram, increase S parameter simulator, VSWR, STABFACT, G, MU, MUPRIME;
2) S optimized parameter simulation analysis: in schematic diagram, increase optimization Simulation device OPTIM, optimization aim GOAL.Optimization aim is noise factor, standing-wave ratio, stability and gain.The optimization variable is set, and to make its excursion be ± 5%;
3) S parameter YIELD simulation analysis: in schematic diagram, increase YIELD simulator, YIELDOPTIMZATION simulator and YIELD SPEC respectively.YIELD SPEC target is noise factor, standing-wave ratio, stability and gain.Activate YIELD simulator and YIELD OPTIMZATION simulator respectively, optimization reaches the best qualification rate circuit of design object value.
Emulation and display result: noise factor less than 0.6, input vswr is less than-14dB, the output standing-wave ratio is less than-14dB, stability is greater than 1, gain is greater than 13dB, in optimizing the variable change scope, product percent of pass is 90.8%.This device blocks noise factor of actual measurement less than 0.7dB, gain greater than 12dB, OIP3 greater than 25dBm, working power representative value+5V, operating current 34mA～40mA, input vswr less than 1.5, the output standing-wave ratio is less than 1.5, the input and output isolation is greater than 16dB.
Fig. 4 represents be this invention structural design for example, what this invention was adopted is the SMT form structure, this infrastructure cost is low, need not to add encapsulation, helps batch process.
What Fig. 5 represented is PCB of the present invention exemplary graph in kind, and printing the surface is gold-plated, coating soldering-resistance layer.Each pin is that hemisection is metal pore-formed.The PCB reverse side is a large tracts of land ground connection.When reverse side large tracts of land ground connection is beneficial to this device and is employed, ground connection that can be good.Pin is that hemisection is metal pore-formed, the welding when making things convenient for device to be employed, and also such design cost is very low.Printing board surface is gold-plated, reduces the skin effect of radio circuit.Capacitance resistance component adopts 0603 encapsulation, reduces the volume of this device.
Fig. 6 represents pin design exemplary graph of the present invention.Wherein comprise 5 ground pin, 1 radio frequency input pin, 1 radio frequency output pin and 1+5V power pin.5 ground pin are set, when device is employed, can link to each other with PCB, reach shield effectiveness preferably, make circuit energy steady operation, reduce the generation of self-excitation state by a plurality of pins.This pin configuration is clear and definite, conveniently distinguishes.
The present invention can be applied to: the radar receiver system of 3G W-CDMA radio system, GSM1900MHZ, GSM1800,1900MHZ CDMA and direct discharging station and other corresponding band.Because it is to be applied to other system as device blocks, not only guaranteed the noiseproof feature while but also be convenient to production and processing that cost is lower, and extraordinary market prospects are arranged.
Claims (10)
1, a kind of wideband low noise amplifier device blocks is characterized in that, comprises input matching circuit, source feedback circuit, ATF34143 Series P HEMT pipe, output matching circuit, power circuit and pcb board; Described input matching circuit received RF input signal outputs to the signal after handling in the described ATF34143 Series P HEMT pipe; Described source feedback circuit comprises first source circuit and second source circuit that structure is identical, is connected with described ATF34143 Series P HEMT pipe respectively; Described output matching circuit receives the signal of handling through described ATF34143 Series P HEMT pipe, and the output of the signal after will handling, and described power circuit provides through filtered 5V power supply for described wideband low noise amplifier device blocks through described output matching circuit.
2, wideband low noise amplifier device blocks according to claim 1, it is characterized in that, described input matching circuit comprises coupling capacitance C1, microstrip transmission line and high Q value inductance L1, radiofrequency signal is input to described coupling capacitance C1 through microstrip transmission line, and another section of described coupling capacitance C1 arrives ground through inductance L 1.
3, wideband low noise amplifier device blocks according to claim 2 is characterized in that, described microstrip transmission line live width is 1.4mm ~ 1.5mm.
4, wideband low noise amplifier device blocks according to claim 2 is characterized in that, described inductance L 1 is a high Q value inductance.
5, wideband low noise amplifier device blocks according to claim 1, it is characterized in that, described first source circuit comprises microstrip transmission line, form the source resistance R2 of RC parallel network and every straight shunt capacitance C3, described RC parallel network one end links to each other other end ground connection with described ATF34143 Series P HEMT pipe; Described second source circuit further comprises the source resistance R3 of microstrip transmission line, formation RC parallel network and every straight shunt capacitance C4, described RC parallel network one end links to each other other end ground connection with described ATF34143 Series P HEMT pipe.
6, wideband low noise amplifier device blocks according to claim 5 is characterized in that, described microstrip transmission line live width is less than 1.5mm, and line length is less than 3.0mm.
7, wideband low noise amplifier device blocks according to claim 1, it is characterized in that, described output matching circuit comprises inductance L 2, capacitor C 6 and microstrip transmission line, and described inductance L 2 one ends link to each other with described ATF34143 Series P HEMT pipe, and the other end connects described power circuit; Described capacitor C 6 one ends are connected to described ATF34143 Series P HEMT pipe, other end output signal.
8, wideband low noise amplifier device blocks according to claim 7 is characterized in that, described transmission microstrip line is wide to be 1.4mm～1.5mm.
9, wideband low noise amplifier device blocks according to claim 1, it is characterized in that, described power circuit comprises resistance R 4, filter capacitor C5 and filter capacitor C7, and described resistance R 4 one ends are connected with filter capacitor C5 with described output matching circuit, an end ground connection; The described filter circuit C5 other end is connected with described filter capacitor C7 with power supply VCC; Described filter capacitor C7 other end ground connection.
10, wideband low noise amplifier device blocks according to claim 1 is characterized in that, the external connecting pipe pin of described pcb board adopts the metal pore-formed realization of hemisection; Its Outside Dimensions is less than 15mm*10mm*5mm; Described pcb board is a double-clad board, and sheet material is FR4, and thickness of slab is 0.8, and dielectric constant is 4.6, the gold-plated and coating soldering-resistance layer of printing board surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03139756 CN1568035A (en) | 2003-07-07 | 2003-07-07 | Module arrangement of broadband low-noise amplifier device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03139756 CN1568035A (en) | 2003-07-07 | 2003-07-07 | Module arrangement of broadband low-noise amplifier device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1568035A true CN1568035A (en) | 2005-01-19 |
Family
ID=34470708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03139756 Pending CN1568035A (en) | 2003-07-07 | 2003-07-07 | Module arrangement of broadband low-noise amplifier device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1568035A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725630B (en) * | 2005-07-15 | 2010-10-06 | 摩比天线技术（深圳）有限公司 | Module device of low noise amplifier |
| CN103954851A (en) * | 2014-04-03 | 2014-07-30 | 中国船舶重工集团公司第七二二研究所 | Noise coefficient measuring method and noise coefficient standard device |
| CN104467690A (en) * | 2014-12-04 | 2015-03-25 | 上海联影医疗科技有限公司 | Low-noise amplifier circuit |
| CN105340174A (en) * | 2013-06-14 | 2016-02-17 | 高通股份有限公司 | Self-biased receiver |
| CN110473451A (en) * | 2019-08-20 | 2019-11-19 | 大连海事大学 | It is a kind of can autonomous Design low noise amplifier circuit experimental provision |
-
2003
- 2003-07-07 CN CN 03139756 patent/CN1568035A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725630B (en) * | 2005-07-15 | 2010-10-06 | 摩比天线技术（深圳）有限公司 | Module device of low noise amplifier |
| CN105340174A (en) * | 2013-06-14 | 2016-02-17 | 高通股份有限公司 | Self-biased receiver |
| CN105340174B (en) * | 2013-06-14 | 2017-09-19 | 高通股份有限公司 | Automatic biasing receiver |
| CN103954851A (en) * | 2014-04-03 | 2014-07-30 | 中国船舶重工集团公司第七二二研究所 | Noise coefficient measuring method and noise coefficient standard device |
| CN104467690A (en) * | 2014-12-04 | 2015-03-25 | 上海联影医疗科技有限公司 | Low-noise amplifier circuit |
| CN110473451A (en) * | 2019-08-20 | 2019-11-19 | 大连海事大学 | It is a kind of can autonomous Design low noise amplifier circuit experimental provision |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109194295B (en) | Medium integrated suspension line WLAN double-passband low-noise amplifier | |
| CN104716906A (en) | Method and circuit structure for improving efficiency of wide-band radio frequency power amplifier | |
| KR100786540B1 (en) | non-square patch antenna for receiving satellite signal and all in one antenna module | |
| CN111555719A (en) | Dual-band radio frequency power amplifier and control method thereof | |
| CN1554137A (en) | Wireless terminal | |
| CN1725630B (en) | Module device of low noise amplifier | |
| CN102638314B (en) | Broadband radio frequency modulation circuit of laser | |
| CN112164849B (en) | Defect ground loading based frequency tunable band-pass filter with constant absolute bandwidth | |
| CN111817670A (en) | C-waveband ultra-wideband high-gain low-noise amplifier chip | |
| CN203387469U (en) | X waveband low noise amplifier | |
| CN114844470A (en) | Low-noise amplifier and chip | |
| CN1568035A (en) | Module arrangement of broadband low-noise amplifier device | |
| CN1797939A (en) | Multimode amplifier circuit in low noise | |
| CN201188454Y (en) | Implementation of multi-frequency interference resistance ultra-wideband antenna using double frequency characteristics of ladder impedance resonator | |
| CN113904635B (en) | High third-order intermodulation point field effect transistor radio frequency amplifier | |
| CN115360986A (en) | Ultra-low power consumption ultra-wideband low-noise amplifier | |
| CN1643730A (en) | Improvements in or relating to wireless terminals | |
| CN111313148B (en) | Flexible active monopole antenna | |
| CN110829991B (en) | Novel plane integrated wireless repeater | |
| CN209929482U (en) | Terminal ultra wide band filtering antenna device | |
| CN112468105A (en) | Dual-band LNA matching circuit | |
| CN101079596A (en) | Wide frequency low-noise amplifier | |
| Rambeau et al. | Antenna and input stages of a 470-710 MHz silicon TV tuner for portable applications | |
| CN1271797C (en) | Active integration antenna of back feed type rectangular micro band antenna and front level low noise amplifier non-matched circuit | |
| CN212518922U (en) | C-waveband ultra-wideband high-gain low-noise amplifier chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |