CN1558451A - Light emitting diode element capable of preventing electrostatic damage - Google Patents
Light emitting diode element capable of preventing electrostatic damage Download PDFInfo
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- CN1558451A CN1558451A CNA2004100032846A CN200410003284A CN1558451A CN 1558451 A CN1558451 A CN 1558451A CN A2004100032846 A CNA2004100032846 A CN A2004100032846A CN 200410003284 A CN200410003284 A CN 200410003284A CN 1558451 A CN1558451 A CN 1558451A
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
The invention relates to a light-emitting diode element, in particular a light-emitting diode element capable of preventing electrostatic damage, wherein a surface insulation substrate is provided with at least a first power supply circuit and at least a second power supply circuit, the first power supply circuit can be electrically connected to the LED first electrode of a light-emitting diode and an eSD second electrode of a static electricity resistant protection element, and the second power supply circuit can be electrically connected to the LED second electrode of a light-emitting diode and an eSD first electrode of a static electricity resistant protection element.
Description
Technical field
The invention relates to a kind of light-emitting diode, refer to a kind of light-emitting diode that prevents electrostatic breakdown especially, not only can simplify production process and improve the production yield, and can increase the person in useful life of light-emitting diode again.
Background technology
Therefore light-emitting diode is widely used in computer peripheral, communication product and other electronic installations because have plurality of advantages such as volume is little, in light weight, low power consumption, life-span length.Yet, no matter light-emitting diode is in fabrication schedule or in using, Chang Yinyi static discharge effect and cause light-emitting diode to be damaged, therefore, how to avoid light-emitting diode because of the damage doubt that the static discharge effect causes, the big emphasis deciding the light-emitting diode design and make.
Seeing also Fig. 1, is the circuit diagram that has the light-emitting diode of electrostatic protection effect for existing.As shown in the figure, it is mainly constructed is to include a light-emitting diode 10 and a Zener diode (ZenerDiode) 20, and both connect in the other direction with parallel way.When the supply one normal input voltage V " time, for light-emitting diode 10, its two ends form a forward bias voltage drop (Forward Bias) naturally and impel current lead-through, and then make light-emitting diode 10 projection sources; And zener diode 20, therefore its two ends form a reverse bias (ReversedBias) and are off state, consumed power not.When the static discharge phenomenon takes place, one unusual big input voltage Vcc is formed at the two ends of Zener diode 20, and cause Zener diode 20 to collapse (BreakDown), in case Zener diode 20 collapses, its two ends promptly form short circuit, cause most electric currents to pass through, pass through, therefore can avoid the infringement of light-emitting diode 10 and can't help light-emitting diode 10 by Zener diode 20.In addition, when being negative value as if input voltage Vcc, Zener diode 20 will form forward bias voltage drop and conducting, and 10 of light-emitting diodes are in reverse bias and not conducting.
Continuing, and consult Fig. 2, is the organigram of commonly using the light-emitting diode with electrostatic protection for above-mentioned.As shown in the figure, it is mainly constructed is LED second electrode 19 (for example p electrode or n electrode) and LED first electrode 17 (for example n electrode or p electrode) with a light-emitting diode 10 are electrically connected at Zener diode 20 respectively with the first tin ball 291 and the second tin ball 293 ZD first electrode 27 and ZD second electrode 29, so that light-emitting diode 10 forms a reverse parallel connection state with Zener diode 20.
Wherein, light-emitting diode 10 includes a crystal grain substrate 11, grows up in first epitaxial layer of crystal grain substrate 11 tops] 3, grow up in second epitaxial layer 15 of first epitaxial layer, 13 parts tops; and LED second electrode 19 is fixedly arranged on the upper surface of second epitaxial layer 155, LED first electrode 1 then be fixedly arranged on the upper surface of first epitaxial layer 13.In addition, Zener diode 20 includes one second doped region 25, one first doped region 23, is connected in ZD second electrode 29 of second doped region 25 and is connected in ZD first electrode 27 of first doped region 23.Again, be provided with one first outer electrode 21 on first doped region 23 in addition, when using, only need first outer electrode 21 and Zener diode second electrode 29 (i.e. second outer electrode) power supply are got final product.
Though, above-mentioned existing light-emitting diode has had the function that prevents static discharge damage light-emitting diode 10, but, when manufacture process, light-emitting diode 10 must be inverted, and be fixed on the Zener diode 20, this kind processing procedure must have accurate contraposition equipment, not only expend cost, also improve relatively and make degree of difficulty.In addition, this kind is the design of the pedestal (Submount) of light-emitting diode 10 with Zener diode 20, and its Zener diode 20 volumes are quite huge, therefore, also wasted many materials and manufacturing cost.
For this reason,,, not only static discharge can be prevented and destroy light-emitting diode that more can simplify fabrication schedule and reduce production costs, this is invention emphasis of the present invention to design a kind of light-emitting diode of novelty how at the shortcoming of above-mentioned prior art.Wheat is,
Summary of the invention
Main purpose of the present invention; be to provide a kind of light-emitting diode that prevents electrostatic breakdown; light-emitting diode and electrostatic protection element can directly be fixedly arranged on respectively on first power supply circuits and second power supply circuits of a surface insulated substrate; not only can have antistatic effect, and can simplify production process again and improve the production yield.
Secondary objective of the present invention is to provide a kind of light-emitting diode that prevents electrostatic breakdown, utilizes different antistatic protection elements to rub with the light-emitting diode that cooperates different color light and makes voltage, by this to enlarge the type and the scope of application of light-emitting diode.
Another purpose of the present invention is to provide a kind of light-emitting diode that prevents electrostatic breakdown, by using the less electrostatic protection element of volume, reaches same electrostatic discharge (ESD) protection effect to reduce production costs.
Another purpose of the present invention, be to provide a kind of light-emitting diode that prevents electrostatic breakdown, can select for use the approaching insulating material of thermal coefficient of expansion and light-emitting diode as substrate, break away from because of work high temperature to prevent light-emitting diode and insulated substrate, and then increase the useful life of product.
For reaching above-mentioned purpose, the invention provides a kind of light-emitting diode that prevents electrostatic breakdown, it is characterized in that it is mainly constructed is to include:
One surface insulated substrate which is provided with at least one first power supply circuits and reaches at least
One second power supply circuits;
At least one light-emitting diode, each light-emitting diode can include a LED first electrode and a LED second electrode, wherein this LED first electrode is directly fixed on first power supply circuits of this surface insulated substrate, and LED second electrode then is fixed in second power supply circuits of surface insulated substrate; And
One antistatic protection element; include an ESD first electrode and an ESD second electrode; wherein this ESD first electrode also can be directly fixed on second power supply circuits of this surface insulated substrate; ESD second electrode then is fixed in first power supply circuits of surface insulated substrate, causes antistatic protection element and this light-emitting diode to form a reverse parallel connection circuit.
Wherein this insulating surface insulated substrate be may be selected to be a silicon nitride material, alumina material, aluminium nitride material, beryllium oxide material and be covered with carbofrax material, gallium nitride material, silicon materials and knockdown wherein the material thereof of dielectric material made.
Wherein this dielectric material be may be selected to be silicon dioxide, titanium dioxide, silicon nitride and knockdown one of them.
Wherein this light-emitting diode is to fit on this surface insulated substrate in the chip package mode.
Wherein LED first electrode of this light-emitting diode and LED second electrode still can be electrically connected at these first power supply circuits and this second power supply circuits respectively by a bonding material, and wherein this bonding material is to may be selected to be one gold medal-silicon, Jin-Xi, tin-lead, Xi-Yin, tin indium silver, elargol or tin cream and knockdown one of them material thereof.
Wherein this antistatic protection element be may be selected to be at least one Zener diode, Schottky diode, silicon-based diode, 3-5 family element diode, transistor, electrostatic protection integrated circuit and knockdown one of them.
Wherein this light-emitting diode is to may be selected to be one of them of a plane light-emitting diode and erect type light-emitting diode.
Wherein LED first electrode of this light-emitting diode and LED second electrode still can be selected one of them by a lead and a bonding material, and are electrically connected at these first power supply circuits and this second power supply circuits respectively.
Wherein also can be installed with a heat radiation rack in this surface insulated substrate below.
Wherein this light-emitting diode top also can be provided with a protection glue.
Wherein this light-emitting diode be may be selected to be a red light-emitting diode, green light LED, blue light-emitting diode and knockdown one of them.
Wherein each light-emitting diode is respectively equipped with an antistatic protection element corresponding with it.
Wherein this light-emitting diode also can a plurality of polyphones to become a light-emitting diode group, and LFD first electrode of a light-emitting diode wherein can be directly fixed on first power supply circuits of this surface insulated substrate, and LED second electrode of an other light-emitting diode then is directly fixed on second power supply circuits of this surface insulated substrate.
Wherein this antistatic protection element can include a plurality of Zener diodes, and these a plurality of Zener diodes may be selected to be one oppositely, forward and knockdown wherein one and be connected in series.
Description of drawings
Now for making the auditor further understanding and understanding be arranged to feature of the present invention, structure and the effect reached, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is an existing circuit diagram with light-emitting diode of electrostatic protection effect;
Fig. 2 is above-mentioned existing organigram with light-emitting diode of electrostatic protection effect;
Fig. 3 A and Fig. 3 B are the structure decomposing schematic representation and the combination schematic diagrames thereof of a preferred embodiment of the present invention;
Fig. 4 A and Fig. 4 B are another embodiment of the present invention top view and circuit diagram thereof;
Fig. 5 is the structural side view of further embodiment of this invention;
Fig. 6 is the textural view of further embodiment of this invention;
Fig. 7 A and Fig. 7 B are the structural side view and the top views thereof of further embodiment of this invention; And
Fig. 8 A and Fig. 8 B are the circuit diagram and the structure vertical views thereof of further embodiment of this invention.
Embodiment
At first, seeing also Fig. 3 A and Fig. 3 B, is the structure decomposing schematic representation and the combination schematic diagram thereof of a preferred embodiment of the present invention; As shown in the figure; the present invention can prevent the light-emitting diode 30 of electrostatic breakdown; it mainly is after a light-emitting diode (LED) 33 and antistatic protection element (ESD) 35 are covered brilliant upset, to fit on the surface insulated substrate 31 with at least one first power supply circuits 311 and at least one second power supply circuits 313.
Wherein, light-emitting diode 33, for example the plane light-emitting diode shown in the present embodiment has a LED second electrode 333 and a LED first electrode 331; And antistatic protection element 35 also has an ESD second electrode 353 and an ESD first electrode 351.When light-emitting diode 33 is fitted in surface insulated substrate 31, LED second electrode 333 will be electrically connected at second power supply circuits 313, and LED first electrode 331 then is electrically connected at first power supply circuits 311.Otherwise; ESD first electrode 351 of antistatic protection element 35 will be electrically connected at second power supply circuits 313; ESD second electrode 353 then is electrically connected at first power supply circuits 311, and so light-emitting diode 33 and antistatic protection element 35 will form a reverse parallel connection circuit.The method of its electric connection, can adopt the eutectic or the welding production method that form as gold-silicon (Au-Si), Jin-Xi (AuSn), tin-lead (PbSn), Xi-Yin (Snag) or tin indium silver bonding materials such as (SnInAg), because eutectic or the employed Jin-Xi of welding production method, tin-lead, Xi-Yin or tin indium silver tool high heat-conduction coefficient, not only adhesiveness is good, and the high temperature that light-emitting diode 33 is produced also can be guided out by surface insulated substrate 31 fast, and make light-emitting diode 33 keep normal working temperature, can improve its luminous efficiency thus.Simultaneously, these bonding materials are because of high temperature resistant (more than 200 ℃), so very convenient surface insulated substrate 31 is adhesive in the successive process of heat radiation rack (HEATSINK).
Again, because the active area of first power supply circuits 311 and second power supply circuits 313 is big many compared to ZD first electrode 27 and ZD second electrode 29 of existing Zener diode 20, therefore fashionable at electrode paste, its admissible fault-tolerant scope is also relatively broader, therefore, not only can effectively reduce the making degree of difficulty that LED first electrode 331, LED second electrode 333, ESD first electrode 351 and ESD second electrode 353 electrically connect mutually, and also can improve the production yield relatively.
Again, surface insulated substrate 31 can be selected the close electrical insulating material of the good and thermal coefficient of expansion of a thermal conductivity and light-emitting diode 33 and antistatic protection element 35, for example silicon nitride (Si relatively according to the material of light-emitting diode 33 for use
3N
4), aluminium oxide (Al
2O
3), aluminium nitride (AlN), beryllium oxide (BeO) and be covered with dielectric material (SiO
2, TiO
2, Si
3N
4Deng) carborundum (SiC), silicon (Si), gallium nitride insulating material such as (GaN); when avoiding working temperature to rise; light-emitting diode 33 and surface insulated substrate 31 easy doubts of peeling off; therefore; also can guarantee the antistatic protection function of light-emitting diode 33, and increase the useful life of product.
In addition; antistatic protection element 35 can be selected for use and receive diode, electrostatic protection integrated circuit or other equivalent diodes that diode (Zener Diode), Schottky diode (Schottky Barrier Diode), silicon-based diode, 3-5 family element constituted simultaneously; the principle that it is selected for use; except the breakdown voltage (Breakdown Voltage) that the electrostatic defending of considering light-emitting diode sets, still can cooperate the thermal coefficient of expansion of itself and surface insulated substrate 31.
Because the present invention adopts light-emitting diode 33 and antistatic protection element 35 is fitted in surface insulated substrate 31; and be not that directly directly fitting in light-emitting diode 10 with Zener diode 20 is the design of pedestal like prior art; the volume of antistatic protection element 35 can reduce greatly and can bring into play same function, therefore can save many costs.
Moreover, see also Fig. 4 A and Fig. 4 B, be top view and circuit diagram thereof for another embodiment of the present invention; As shown in the figure; light-emitting diode 40 mainly is that two electrodes with 337,338,339 and antistatic protection elements 35 of a plurality of light-emitting diodes stick on first power supply circuits 411 or second power supply circuits 413 of a surface insulated substrate 41 with parallel way, and forms a High Power LED array.When input voltage Vcc is a normal drive voltage; each light-emitting diode 337,338,339 becomes the state of a forward bias voltage drop; therefore can produce default coloured light, antistatic protection element 35 then is in an off state, not consumed power because of reverse bias.Otherwise, when static discharge, unusual big input voltage Vcc input, because antistatic protection element 35 is in the collapse state and conducting, therefore, most of electric currents are passed through by antistatic protection element 35, therefrom the damage of light-emitting diode 337,338,339.Again, when input voltage Vcc was negative value, antistatic protection element 35 was in conducting state, and electric current is passed through by antistatic protection element 35, and light-emitting diode 337,338,339 is unlikely because of huge revers voltage and damages.
Again, seeing also Fig. 5, is the structure schematic side view of further embodiment of this invention; As shown in the figure, light-emitting diode 50 mainly is connected with a heat radiation rack 51 in surface insulated substrate 41 belows with Fig. 4 embodiment with a binder course 53, and surface insulated substrate 41 tops are then coated with a protection glue 55.Wherein this binder course 53 is to may be selected to be materials such as one gold medal-Xi (AuSn), tin-lead (PbSn), Xi-Yin (SnAg), tin indium silver (SnhAg), elargol or tin cream, can increase the pipeline that work thermal source that light-emitting diode 337,338,339 is produced is discharged by heat radiation rack 51 rapidly therefrom, to prolong its useful life and to increase its luminous efficiency.In addition, protection glue 55 more can completely cut off outside harmful substance, and avoids the chance of light-emitting diode 337,338,339 oxidized destructions relatively.
Again, seeing also Fig. 6, is the textural schematic diagram of looking of further embodiment of this invention; As shown in the figure, light-emitting diode 60 its mainly be on a surface insulated substrate 61, to be provided with common power supply circuits 611, ruddiness power supply circuits 613, green glow power supply circuits 615 and blue light power supply circuits 617.Wherein, ruddiness power supply circuits 613, green glow power supply circuits 615 and blue light power supply circuits 617 are installed with at least one red light-emitting diode 633 and an antistatic protection element 653, green light LED 635 and an antistatic protection element 655, blue light-emitting diode 637 and an antistatic protection element 657 respectively.So, when ruddiness, blue light, green glow mixing, can produce a white light source or All colour light source.And antistatic protection element 653,655,657 may be selected to be the diode of different breakdown voltages; to cooperate the operating voltage of this red light-emitting diode 633, mercerising light-emitting diode 635 and blue light-emitting diode 637, thus to reach best antistatic effect.
Again, seeing also Fig. 7 A figure and Fig. 7 B, is the end view and the top view thereof of further embodiment of this invention; As shown in the figure, it mainly is to be applied on the erect type light-emitting diode 70, erect type light-emitting diode 70 includes a LED first electrode 731 and a LED second electrode 733, lay respectively at the both sides up and down of light-emitting diode epitaxial layer 73, can utilize a binder course 79, for example Jin-Xi (AuSn), tin-lead (PbSn), Xi-Yin (Snag), tin indium silver (SnlnAg), silver paste, tin glue, gold-silicon materials such as (AuSi), and its LED second electrode 733 directly is bonding on second power supply circuits 713 of circuit board 71.Again, 731 at LED first electrode utilizes a lead 77 to be electrically connected at first power supply circuits 711.And be connected with an antistatic protection element 35 between first power supply circuits 711 and second power supply circuits 713 equally, to guarantee the antistatic protection function of a light-emitting diode 70.
At last, seeing also Fig. 8 A and Fig. 8 B, is the circuit diagram and the structure vertical view thereof of further embodiment of this invention.As shown in the figure, light-emitting diode 80 mainly is with a plurality of light-emitting diode 837-839 polyphones, to become a light-emitting diode group 83, wherein second electrode of first electrode of a light-emitting diode 837 and an other light-emitting diode is fixed in first power supply circuits 811, second power supply circuits 813 of surface insulated substrate 81 individually, and is electrically connected between first power supply circuits 811 and second power supply circuits 813 with series system.In addition, be serially connected with the Zener diode 851,853 that at least one pair of oppositely connects between first power supply circuits 811 and second power supply circuits 813, thus to improve its breakdown voltage numerical value.And this kind is with the design of a plurality of light-emitting diode series connection; the light-emitting diode that goes out different driving voltage not only capable of being combined; and, by the different configuration modes of electrostatic protection element (Zener diode 851,853), more can provide different protection magnitudes of voltage with the needs of reality.
In sum, the invention relates to a kind of light-emitting diode, refer to a kind of light-emitting diode that prevents electrostatic breakdown especially, not only can simplify production process and improve the production yield, and can increase the person in useful life of light-emitting diode again when knowing.So the present invention one is rich in novelty, progressive, and can utilize effect person, should meet the patent application condition, so submit application for a patent for invention in accordance with the law for industry.
Above-described, it only is a preferred embodiment of the present invention, be not to be used for limiting scope of the invention process, promptly all equalizations of doing according to the described shape of the present patent application claim, structure, feature and spirit change and modify, all should be included in please claim in of the present invention in.
Claims (14)
1, a kind of light-emitting diode that prevents electrostatic breakdown is characterized in that, it is mainly constructed is to include:
One surface insulated substrate which is provided with at least one first power supply circuits and reaches at least
One second power supply circuits;
At least one light-emitting diode, each light-emitting diode can include a LED first electrode and a LED second electrode, wherein this LED first electrode is directly fixed on first power supply circuits of this surface insulated substrate, and LED second electrode then is fixed in second power supply circuits of surface insulated substrate; And
One antistatic protection element; include an ESD first electrode and an ESD second electrode; wherein this ESD first electrode also can be directly fixed on second power supply circuits of this surface insulated substrate; ESD second electrode then is fixed in first power supply circuits of surface insulated substrate, causes antistatic protection element and this light-emitting diode to form a reverse parallel connection circuit.
2, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 1, it is characterized in that, wherein this insulating surface insulated substrate be may be selected to be a silicon nitride material, alumina material, aluminium nitride material, beryllium oxide material and be covered with carbofrax material, gallium nitride material, silicon materials and knockdown wherein the material thereof of dielectric material made.
3, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 2 is characterized in that, wherein this dielectric material be may be selected to be silicon dioxide, titanium dioxide, silicon nitride and knockdown one of them.
4, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 1 is characterized in that, wherein this light-emitting diode is to fit on this surface insulated substrate in the chip package mode.
5, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 4, it is characterized in that, wherein LED first electrode of this light-emitting diode and LED second electrode still can be electrically connected at these first power supply circuits and this second power supply circuits respectively by a bonding material, and wherein this bonding material is to may be selected to be a gold medal one silicon, gold-tin, tin-lead, tin-silver, tin indium silver, elargol or tin cream and knockdown one of them material thereof.
6, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 1; it is characterized in that, wherein this antistatic protection element be may be selected to be at least one Zener diode, Schottky diode, silicon-based diode, 3-5 family element diode, transistor, electrostatic protection integrated circuit and knockdown one of them.
7, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 1 is characterized in that, wherein this light-emitting diode is to may be selected to be one of them of a plane light-emitting diode and erect type light-emitting diode.
8, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 7, it is characterized in that, wherein LED first electrode of this light-emitting diode and LED second electrode still can be selected one of them by a lead and a bonding material, and are electrically connected at these first power supply circuits and this second power supply circuits respectively.
9, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 1 is characterized in that, wherein also can be installed with a heat radiation rack in this surface insulated substrate below.
10, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 1 is characterized in that, wherein this light-emitting diode top also can be provided with a protection glue.
11, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 1 is characterized in that, wherein this light-emitting diode be may be selected to be a red light-emitting diode, green light LED, blue light-emitting diode and knockdown one of them.
12, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 11 is characterized in that, wherein each light-emitting diode is respectively equipped with an antistatic protection element corresponding with it.
13, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 1, it is characterized in that, wherein this light-emitting diode also can a plurality of polyphones to become a light-emitting diode group, and LFD first electrode of a light-emitting diode wherein can be directly fixed on first power supply circuits of this surface insulated substrate, and LED second electrode of an other light-emitting diode then is directly fixed on second power supply circuits of this surface insulated substrate.
14, the light-emitting diode that prevents electrostatic breakdown as claimed in claim 6; it is characterized in that; wherein this antistatic protection element can include a plurality of Zener diodes, and these a plurality of Zener diodes may be selected to be one oppositely, forward and knockdown wherein one and be connected in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100032846A CN1558451A (en) | 2004-02-03 | 2004-02-03 | Light emitting diode element capable of preventing electrostatic damage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100032846A CN1558451A (en) | 2004-02-03 | 2004-02-03 | Light emitting diode element capable of preventing electrostatic damage |
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| CN1558451A true CN1558451A (en) | 2004-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2004100032846A Pending CN1558451A (en) | 2004-02-03 | 2004-02-03 | Light emitting diode element capable of preventing electrostatic damage |
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| CN100392885C (en) * | 2005-08-18 | 2008-06-04 | 璨圆光电股份有限公司 | Structure of light-emitting diode |
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