CN1519398A - Substrate of monocrystalline silicon with heavy adulterated boron capable to compensate crystal lattice - Google Patents
Substrate of monocrystalline silicon with heavy adulterated boron capable to compensate crystal lattice Download PDFInfo
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- CN1519398A CN1519398A CNA031508065A CN03150806A CN1519398A CN 1519398 A CN1519398 A CN 1519398A CN A031508065 A CNA031508065 A CN A031508065A CN 03150806 A CN03150806 A CN 03150806A CN 1519398 A CN1519398 A CN 1519398A
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- substrate
- crystal lattice
- heavy
- monocrystalline silicon
- heavily doped
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- Recrystallisation Techniques (AREA)
Abstract
A monosilicon substrate doped by more boron with crystal lattice compersating effect for the epitaxial growth features that it contains B (1X10 to the power 13-21/cu.cm) and Ge (1X10 to the power 13-21/cu.cm). As the atom radius of Ge is greater than that of Si, the crystal lattice compensation is generated to prevent the dismatch between crystal lattices. Its advantages are high quality and finished product rate of monosilicon.
Description
Technical field
The present invention relates to a kind of heavily doped borosilicate single crystalline substrate.
Background technology
Along with the development of super large-scale integration (ULSI), more and more be widely used as the heavily doped silicon of epitaxial substrate.This N/N
+, P/P
+Epitaxial structure combines with IG technology, can improve the memory hold-time of dynamic storage RAM greatly, is the optimal path that solves the soft failure (Softerror) that latch-up (Latch up) in the circuit and alpha-particle cause.
Heavily doped borosilicate monocrystalline as topmost p type heavily-doped silicon, is compared with other type heavily-doped silicon, has many good characteristics, is a kind of substrate material of important super large-scale integration, and still, the doping content of boron is greater than 1 * 10 in silicon
19Cm
-3, when promptly the resistivity of silicon single-crystal is less than 0.01 ohmcm,, produces misfit dislocation, and extend to epitaxial film because therefore the atomic radius of boron, lattice mismatch occurs easily less than the matrix Siliciumatom, finally cause integrated circuit (IC)-components to lose efficacy.
Summary of the invention
The purpose of this invention is to provide a kind of heavily doped borosilicate single crystalline substrate, improve substrate quality,, effectively improve the yield rate of super large-scale integration device to eliminate or to reduce lattice mismatch and misfit dislocation in the heavily doped borosilicate epitaxial single crystal layer with lattice compensation.
The heavily doped borosilicate single crystalline substrate with lattice compensation of invention, it contains concentration 10
13～1 * 10
21/ cm
3Boron, concentration is 1 * 10
16～1 * 10
21Cm
-3Germanium.
Heavily doped borosilicate single crystalline substrate with lattice compensation of the present invention can by as following method be prepared from:
To contain boron doped polycrystalline silicon raw material and put into quartz crucible,, add HpGe (purity is greater than 99.999%) according to the Ge-doped concentration of setting; under argon shield; temperature is raised to 1400 ℃～1500 ℃, and when polysilicon melted, germanium fused in the polysilicon liquation.Adjust the crystal growth parameter routinely, get silicon single-crystal of the present invention, be used as substrate, grown silicon epitaxial film through cutting processing backs such as grinding and polishing.
The invention has the advantages that:
Doped germanium in heavily doped borosilicate monocrystalline because the atomic radius of germanium, forms the lattice compensation greater than the matrix Siliciumatom, makes lattice mismatch no longer occur, and misfit dislocation no longer produces, thereby can effectively improve the quality of heavily doped borosilicate epitaxial wafer.And the outermost electron number of element Ge is the same with element silicon, all is 4, therefore can not influence the electric property of heavily doped borosilicate single crystalline substrate and epitaxial film.
The specific examples mode
With growing p-type 6 inches＜100〉heavily doped borosilicate single crystalline substrate is example, is 1 * 10 with boron doping concentration
20Cm
-3Polysilicon put into quartz crucible, according to setting Ge-doped concentration 1 * 10
19～1 * 10
22Cm
-3, the HpGe of adding 0.001～1000g under argon shield, is raised to 1400 ℃ with temperature, and when polysilicon melted, germanium fused in the polysilicon liquation.Adjust the crystal growth parameter, the high-quality silicon single crystal of growth trace germanium element doping, through after cutting processing such as grinding and polishing, as substrate, the grown silicon epitaxial film.
Claims (1)
1. heavily doped borosilicate single crystalline substrate with lattice compensation is characterized in that it contains concentration 10
13～1 * 10
21/ cm
3Boron, concentration is 1 * 10
16～1 * 10
21Cm
-3Germanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031508065A CN1519398A (en) | 2003-09-02 | 2003-09-02 | Substrate of monocrystalline silicon with heavy adulterated boron capable to compensate crystal lattice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031508065A CN1519398A (en) | 2003-09-02 | 2003-09-02 | Substrate of monocrystalline silicon with heavy adulterated boron capable to compensate crystal lattice |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1519398A true CN1519398A (en) | 2004-08-11 |
Family
ID=34286765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA031508065A Pending CN1519398A (en) | 2003-09-02 | 2003-09-02 | Substrate of monocrystalline silicon with heavy adulterated boron capable to compensate crystal lattice |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1519398A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005506A (en) * | 2010-10-18 | 2011-04-06 | 浙江大学 | Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof |
| CN102061514A (en) * | 2010-11-03 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| CN102376749A (en) * | 2010-08-09 | 2012-03-14 | 硅电子股份公司 | Silicon wafer and production method thereof |
| CN104711675A (en) * | 2015-02-16 | 2015-06-17 | 浙江金瑞泓科技股份有限公司 | Phosphorus, arsenic and antimony co-doped N-type heavily-doped Czochralski silicon single crystal and silicon epitaxial wafer thereof |
-
2003
- 2003-09-02 CN CNA031508065A patent/CN1519398A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376749A (en) * | 2010-08-09 | 2012-03-14 | 硅电子股份公司 | Silicon wafer and production method thereof |
| CN102005506A (en) * | 2010-10-18 | 2011-04-06 | 浙江大学 | Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof |
| CN102005506B (en) * | 2010-10-18 | 2012-07-25 | 浙江大学 | Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof |
| CN102061514A (en) * | 2010-11-03 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| CN102061514B (en) * | 2010-11-03 | 2012-03-28 | 天津市环欧半导体材料技术有限公司 | Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| CN104711675A (en) * | 2015-02-16 | 2015-06-17 | 浙江金瑞泓科技股份有限公司 | Phosphorus, arsenic and antimony co-doped N-type heavily-doped Czochralski silicon single crystal and silicon epitaxial wafer thereof |
| CN104711675B (en) * | 2015-02-16 | 2017-11-10 | 浙江金瑞泓科技股份有限公司 | The N-type adulterating vertical pulling silicon monocrystalline and its silicon epitaxial wafer of phosphorus arsenic antimony codope |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |