CN1371007A - Micromechanical light switch array - Google Patents
Micromechanical light switch array Download PDFInfo
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- CN1371007A CN1371007A CN 01104082 CN01104082A CN1371007A CN 1371007 A CN1371007 A CN 1371007A CN 01104082 CN01104082 CN 01104082 CN 01104082 A CN01104082 A CN 01104082A CN 1371007 A CN1371007 A CN 1371007A
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Abstract
In the present invention, disclosed is one kind of micromechanical light switch array with one silicon monocrystal substrate in crystal orientation as basic constituent component and used for fiber communication. On the substrate, there are several integrated reflecting mirror plates in crystal plane and the reflecting mirror plates is supported by one elastic silicon chip. On the substrate, there are also integrated cavity, perpendicular deep slot, barrier block, micro channel, etc. The reflecting mirror plates are separated from the substrate by the deep slot and the barrier block is in the communicated part between the cavity and the deep slot. The deep slot leads the reflecting mirror plates to shift up and down while the barrier block limit the maximum shift height. In the micro channel, there are fiber and cylindrical lens for automatic alignment of the reflecting mirror plates.
Description
The invention relates to the array of photoswitch that optical fiber communication is used, particularly the micromechanical light switch array of using about optical fiber communication.The function of photoswitch is that the light beam with Optical Fiber Transmission turns on and off as required, is mainly used in optical fiber communication.Photoswitch is compared with optoelectronic switch, and its superior part is to avoid electromagnetic interference (EMI), need not opto-electronic conversion, and is simple in structure, and power consumption is low etc.Photoswitch progressively replaces optoelectronic switch in Guang fiber communication Xi System, in the near future, be bound to occur all adopting the optical fiber telecommunications system of photoswitch.
Early stage light shutter device switches with machinery and electrooptical modulation is a principle of work, and its shortcoming is that one-piece construction is microminiaturized difficult, and is also very difficult with the integrated circuit combination of control usefulness.Fa Zhan light shutter device was the micro-mechanical-optical switch device in recent years.The micromechanics manufacturing technology is the succession and the development of semiconductor device processing technology, not only can adopt most of semiconductor devices to make used equipment, and can continue to use the technology that most of semiconductor devices manufacturing is adopted.Therefore micro-mechanical-optical switch, as semiconductor devices, it is little, in light weight to have a volume, machining precision height, advantage such as production in enormous quantities easily.In addition, the integrated circuit that photoswitch operates required configuration also can adopt the mixing integrated approach to be achieved, thereby is simplified the one-piece construction of photoswitch and improve its combination property.
First kind of existing micromechanical light switch array as shown in Figure 1.This micromechanical light switch array mainly is put together by two substrates, wherein a substrate 101 comprises number of metal pad and metallic circuit line 104, some reflectings surface 102, with some through holes 103, another piece substrate 105 comprises some pits 106 and some supporting walls 107 that is in the pit top.Comprise that in addition plurality of rows is listed in the optical fiber 108 of two substrate assembly peripheries.Reflecting surface 102 is folding downwards to bend into through hole 103, through hole 103 aligned beneath pits 106, and curved reflecting surface 102 bottom rear are close to the pit top down.With reflecting surface 102 is the center component units, periodically launches towards two mutually perpendicular directions, constitutes micromechanical light switch array.Each reflecting surface 102 is supported that by two slender axles bars the outer end of slender axles bar is connected with first substrate 101.By the torsional deformation of slender axles bar, reflecting surface 102 is rotated, thereby realize the transfer of reflective condition and non-reflective state.
Two substrates 101 and 105 amalgamations will be aimed at mutually, make reflecting surface and via-hole array on the substrate 101 corresponding one by one in place with the pit array on the substrate 105, and make each pit 105 admit a curved down reflecting surface 102 just.Reflecting surface 102 times is curved enter pit 105 after, by supporting wall 107 it is blocked, make it orientate the vertical reflection state as, the light beam that is transmitted by optical fiber 108 this moment can be by reflecting surface 102 reflections, thereby change its transmission direction.
Two substrate amalgamation structures are major defects of this micromechanical light switch array, make and bring many troubles because require during two substrate amalgamations corresponding member accurately to aim at ， Zhe Give.
The problem that exists also has the aiming of optical fiber and reflecting surface need dispose micromatic setting, thereby makes the micromechanical light switch array structure become complicated, operates also very difficult.
In addition, the rotation of reflecting surface is driven so that the slender axles bar produces torsional deformation by electrostatic force, and this mechanical process all is not very clear so far, can be also few for the data of design, realize accurately controlling and being not easy.
Fig. 2 represents second kind of existing micromechanical light switch array.This micro-mechanical-optical switch Zhen Lie Group closes member and comprises substrate 201, some reflectings surface 202 and 203 that are in reflective condition and non-reflective state, some micro lens 204, some optical fiber 205 and a driving mechanism.Reflecting surface is connected by rotating shaft with substrate, is rotated motion under the effect of non-electrostatic force.Driving mechanism is attached to substrate 201, and links to each other with reflecting surface, and its function is to impel reflecting surface to change between reflective condition and non-reflective state.Each reflecting surface need dispose a hinge pin and two hinge pin at least.The hinge pin realizes that with the mechanism that is connected by ordering the aciculiform shape of substrate 201 each is ordered pin mechanism and contains a dead slot that can hold the hinge pin, and the hinge pin can move freely in groove, causes reflecting surface around hinge axis.
Driving mechanism comprises a hinge assembly and a rectangular flat.Jiao Lian Group closes and disposes more than one pitman, and the one end is connected with the reflecting surface hinge, and the other end is connected with the rectangular flat hinge.Rectangular flat and substrate 201 are slidingly connected, can be parallel mobile between the position of two qualifications.
Driving mechanism can adopt gripper driving mechanism and pectination driving mechanism.Parallel mobile the going on foot by two of rectangular flat operated realization, and at first by the effect startup driving mechanism of substrate 201, the effect by driving mechanism causes that rectangular flat is parallel mobile then.
The open defect of this micromechanical light switch array is that movable part is many, the location of each movable part all has influence on the degree of accuracy that reflecting surface finally enters reflective condition, and the connection between the movable part is not drive fit, but leave certain hole, in case outside the vibrations, must cause moving of position each other, thereby drive the direction that folded light beam departs from aligning.
Another defective, be driving mechanism Accounting with many operating surface spaces, make the bigger distance of existence between the optical switch element, and do not dispose condenser lens between the reflecting surface, will cause light beam to increase in the free space loss.
In addition, this micromechanical light switch array will be made with three layers of polysilicon process technology, and the prematurity still of present this technology, the repeatable accuracy of produced micromechanical light switch array is very undesirable.
The problem that exists Wei Xie Decision above-mentioned existing micromechanical light switch array, and excavate the still undeveloped potential advantages of micromechanical light switch array, the present invention gives micromechanical light switch array following characteristic:
The mirror plane of micromechanical light switch array can keep the state vertical with its operation planar automatically, even vibration takes place external environment condition and it is departed from, but vibration promptly can be returned plumbness automatically in case disappear.
All dispose lens between per two beam Propagation points in the micromechanical light switch array, the light beam of dispersing is played converging action, thereby reduce the optical transmission loss of free space.
The catoptron of micromechanical light switch array is integrated on the same substrate with the microstructure of placing optical fiber and lens, to realize passive aiming or automatic aiming between each beam Propagation point.
The attached flat board of the catoptron of micromechanical light switch array is (111) silicon crystal plane flat board, and its surface has flatness and the smooth finish of atom Grade, thereby has high reflection coefficient.
The catoptron of micromechanical light switch array is the two-sided planar catoptron, thereby micromechanical light switch array is had than higher photoswitch density, is more convenient for realizing integrally-built microminiaturization.
The catoptron of micromechanical light switch array has extremely good mechanical property by the flexure strip support that silicon single crystal forms, and helps increasing the service life.
The lens of micromechanical light switch array have the cylindrical size identical with optical fiber, thereby can together arrange with optical fiber, and are favourable to simplified manufacturing technique and assurance pointing accuracy.
The various characteristics of above-mentioned micromechanical light switch array is clear and definite specifically to be reflected in the present invention and to establish on the following micromechanical light switch array of Meter.The basic comprising of micromechanical light switch array of the present invention is mainly the silicon monocrystalline substrate in (a 110) crystal orientation, this substrate is integrated with the catoptron flat board of some orderly arrangements, this catoptron flat board two relatively the surface be (111) crystal plane perpendicular to the silicon monocrystalline substrate surface.Every catoptron flat board is by an elasticity silicon chip support that is in the silicon substrate back, and this elasticity silicon chip is parallel to surface of silicon, and with the dull and stereotyped vertical commissure of catoptron.Every elasticity silicon chip has at least one side and silicon substrate to keep being connected, and other all separates with silicon substrate everywhere.There is a cavity to be clipped between elasticity silicon chip and the silicon substrate, for the deformation of elasticity silicon chip provides the curved space.Cavity is communicated with vertical deep trouth, and the catoptron flat board vertically separates by vertical deep trouth and (110) silicon substrate just.It is right to form rectangular-shaped stopper at cavity and the vertical deep trouth place of connection, divides the both sides that occupy catoptron flat board bottom.Vertical deep trouth directing mirror flat board is vertical moving up and down, and stopper limits the maximum height of moving on the catoptron flat board, and the crooked elasticity silicon chip of pressing is in plumbness with the catoptron flat board of keeping its support.The formation of micromechanical light switch array of the present invention also comprises some miniature irrigation canals and ditches, and these miniature irrigation canals and ditches and catoptron flat board are integrated in the same silicon substrate, and its central axis becomes 135 degree or 45 degree Clip angles with (111) crystal plane of catoptron flat board.
Place an optical fiber or one section cylindrical lens in every miniature irrigation canals and ditches, its central axis is on the same surface level, each other parallel arrangement or capwise.Every optical fiber all extends from afar, transmits the light beam from message center.The near-end of optical fiber focuses on the divergent beams that return with one section cylindrical lens, makes its most of luminous energy send message center back to along fiber core.Optical fiber and cylindrical lens all have only a small half of part to insert in the miniature irrigation canals and ditches, make its fibre core exceed surface of silicon, thereby the light beam of Optical Fiber Transmission still can be advanced along the surface of silicon sky after leaving fibre core.
Every catoptron flat board is aimed at by four sections cylindrical lens, the extended axis of the horse of two sections cylindrical lens of the dull and stereotyped the same side of catoptron is mutually orthogonal, intersection point is on the reflecting surface of the dull and stereotyped homonymy of catoptron, and form identical angle with the normal direction of catoptron flat board, thereby wherein one section cylindrical lens emitted light beams can enter another section cylindrical lens after mirror reflects.Sufficient Enough is little when the thickness foot Enough of catoptron flat board diameter thin or light beam, then the extended axis of the horse intersection point of four sections cylindrical lens can be placed the mid-depth of catoptron flat board, thereby make the extended axis of the horse of four sections cylindrical lens mutually vertical or connect into straight line.
Reflect Zhuan Tai Time when the catoptron flat board is in non-, its whole plate faces are hidden in (110) silicon substrate, and its top flushes with (110) surface of silicon.At this moment, cross by the top, top that one section right cylindrical lens emitted light beams energy Enough of catoptron platen surface has no to hinder from the catoptron flat board, and enter another section cylindrical lens that is in dull and stereotyped this section of opposite side of catoptron cylindrical lens extended line direction.
The catoptron flat board enters reflective condition and is driven by the electrostatic forcing between plate condenser two flat boards.For this reason, but elasticity silicon chip self constitutes the deformation electrode of plate condenser, and another plate electrode is attached on the stiffener plate outside the silicon substrate.During added polarity is identical on two plate electrodes of plate condenser voltage, the elasticity silicon chip is subjected to the repulsive force effect crooked in cavity, the dull and stereotyped upwards lifting of catoptron that drive is supported by the elasticity silicon chip causes dull and stereotyped outstanding (110) surface of silicon of catoptron, stops the light beam that passes through from here.At this moment, can not cross from the top of catoptron flat board by one section cylindrical lens emitted light beams that the catoptron platen surface is right, but reflect by the reflecting surface of catoptron flat board, enter then and be in dull and stereotyped another elongated segment line of homonymy of catoptron and the vertical cylindrical lens of this section cylindrical lens extended line.
Cylindrical lens is formed at the optical fiber that refractive index gradient changes, and the refractive index of its light core radially becomes para-curve to increase progressively.The external diameter of the optical fiber that the refractive index gradient of selecting for use changes is identical with the optical fiber of communication usefulness, thereby not only can place optical fiber but also can place cylindrical lens in having the miniature irrigation canals and ditches of same geometric configuration.
Micromechanical light switch array of the present invention adopts the micromachining technology manufacturing, and its principal character manufacturing step comprises: with KOH solution (110) silicon monocrystalline substrate is carried out anisotropic etch, to form (111) crystal plane flat board; Selectivity forms hiding oxidized porous silicon layer, its selective corrosion is removed to be partitioned into a part from silicon monocrystalline substrate subsequently and is become the elasticity silicon chip.
Crystal structure according to silicon single crystal is learnt: (110) silicon monocrystalline substrate contains four (111) crystal planes perpendicular to its surface.When (110) silicon single crystal flake corroded in KOH solution, the corrosion rate of its (110) crystal plane was much larger than the corrosion rate of (111) crystal plane, and therefore behind the etching time through sufficient Enough length, the side of corrosion pit is (111) crystal plane.If the corrosion masking graphics comprises diamond opening, and the sideline aligned perpendicular of rhombus is in (111) on (110) silicon monocrystalline substrate surface crystal plane, then the two relative side of formed corrosion pit is (111) crystal plane of smooth very.
Oxidized porous silicon is generated via thermal oxide under lower temperature by porous silicon, and porous silicon is the specific form of monocrystalline silicon, by monocrystalline silicon anodic oxidation takes place in HF solution and generates.Therefore forming oxidized porous silicon must be through four step, and the first step forms heavily doped diffusion layer in lightly doped silicon monocrystalline substrate; Second step, the lightly doped silicon epitaxy layer of epitaxial growth on heavily doped diffusion layer; In the 3rd step, heavily doped diffusion layer selective conversion is become porous silicon layer; In the 4th step, the porous silicon layer selective conversion is become oxidized porous silicon layer.In the process with KOH solution corrosion (110) silicon monocrystalline substrate, oxidized porous silicon layer is as erosion-resisting restraining barrier, prevents that silicon epitaxy layer under the oxidized porous silicon layer is by the KOH solution corrosion.Oxidized porous silicon layer can selectivity remove in the etchant solution that does not corrode silicon, thereby can keep the silicon epitaxy layer under it, makes it become the elasticity silicon chip that separates with silicon substrate.
The feature manufacturing step that other is used forms the miniature irrigation canals and ditches that geometric configuration can accurately be controlled in addition.The one preferred technique that forms miniature irrigation canals and ditches is a deep trouth reactive ion etching technology, and its substitute technology is the KOH anisotropic corrosion technique.With the technology that the miniature irrigation canals and ditches of optical fiber are placed in the formation of KOH solution corrosion (110) silicon monocrystalline substrate, in the United States Patent (USP) 5381231 that is issued to the inventor, made detailed description, this United States Patent (USP) is put into list of references of the present invention.Miniature irrigation canals and ditches in the United States Patent (USP) 5381231 form technology can be summarized in two step operating process.The first step uses KOH solution corrosion (110) silicon monocrystalline substrate to form pit string.Each pit string comprises the pit of two kinds of different sizes, and is staggered each other.Along the pit string central axial direction, two opposite flanks of each pit are (111) crystal plane perpendicular to (110) silicon monocrystalline substrate surface.The one thin wall perpendicular to (110) silicon monocrystalline substrate surface is all arranged between per two adjacent pit, thus adjacent pit is kept apart.Second step, remove thin wall between the two adjacent pits with the isotropic etch solution corrosion of silicon, pit string is got through become irrigation canals and ditches.Stay outstanding spine shape platform after thin wall corrosion is removed, be distributed in the two relative side of irrigation canals and ditches, in pairs in opposite directions thirty years of age, leave passage therebetween.The geometric configuration of spine shape platform comprises width of channel, can give first setting by control corrosion masking film figure and etching condition.
In order to help to understand the essential distinction of micromechanical light switch array of the present invention and existing micromechanical light switch array, this paper is with the synoptic diagram of existing micromechanical light switch array, the structural representation of micromechanical light switch array of the present invention, and the manufacturing process synoptic diagram of micromechanical light switch array of the present invention.
Fig. 1 is the perspective diagram of existing micromechanical light switch array.
Fig. 2 is the perspective diagram of another existing micromechanical light switch array.
Fig. 3 partly excises perspective diagram for the micromechanical light switch array that the present invention designs.
Fig. 4 partly excises perspective diagram when being in non-reflective state for micromechanical light switch array of the present invention.
Fig. 5 partly excises perspective diagram when being in reflective condition for micromechanical light switch array of the present invention.
Fig. 6 finishes rear section excision perspective diagram for the first step of micromechanical light switch array manufacturing process of the present invention, and the purpose in this step is to form heavily doped diffusion layer in the first surface of lightly doped (110) silicon monocrystalline substrate.
Fig. 7 finishes rear section excision perspective diagram for second step of micromechanical light switch array manufacturing process of the present invention, and the purpose in this step is the lightly-doped silicon epitaxial loayer that forms Fu Cover heavily doped diffusion layer on the first surface of (110) silicon monocrystalline substrate.
Fig. 8 finishes rear section excision perspective diagram for the 3rd step of micromechanical light switch array manufacturing process of the present invention, the purpose in this step is that heavily doped diffusion layer is transformed into porous silicon layer by anodic oxidation, and and then by thermal oxide porous silicon layer is transformed into oxidized porous silicon layer.
Fig. 9 finishes rear section excision perspective diagram for the 4th step of micromechanical light switch array manufacturing process of the present invention, and the purpose in this step is to form miniature irrigation canals and ditches in the second surface of (110) silicon monocrystalline substrate.
Figure 10 finishes rear section excision perspective diagram for the 5th step of micromechanical light switch array manufacturing process of the present invention, and the purpose in this step is to form (111) crystal plane film in the second surface of (110) silicon monocrystalline substrate.
Figure 11 is the firm shape plate part excision perspective diagram of the 6th step preparation of micromechanical light switch array manufacturing process of the present invention.
Figure 12 finishes rear section excision perspective diagram for the 7th step of micromechanical light switch array manufacturing process of the present invention, the purpose in this step is with (110) silicon monocrystalline substrate and stiffener plate combination, and scribes deep trouth to form (111) crystal plane flat board in the second surface of (110) silicon monocrystalline substrate.
Figure 13 finishes rear section excision perspective diagram for the 8th step of micromechanical light switch array manufacturing process of the present invention, and the purpose in this step is that oxidized porous silicon layer is removed in selective corrosion, finally forms micromechanical light switch array.
Figure 14 is the perspective diagram of the present invention with KOH solution corrosion (110) silicon single crystal flake formation etch pit string, and this measure is to form one of manufacturing step of the required miniature irrigation canals and ditches of micromechanical light switch array of the present invention.
Figure 15 removes etch pit string internal partition wall with its perspective diagram of getting through for the present invention with silicon isotropic etch solution corrosion, and this measure is to form two of the manufacturing step of the required miniature irrigation canals and ditches of micromechanical light switch array of the present invention.
Figure 16 is the perspective diagram of the present invention with placement optical fiber and cylindrical lens in the formed miniature irrigation canals and ditches of KOH solution corrosion (110) silicon single crystal flake.
With reference to accompanying drawing, device architecture and the manufacturing process thereof to micromechanical light switch array of the present invention is described in detail below.
As shown in Figure 3, micromechanical light switch array of the present invention serves as to build the basis with (a 110) silicon monocrystalline substrate 301, its inside is integrated with some (111) crystal plane catoptron flat boards 302 that appear, some hiding (111) crystal plane catoptron flat boards 303, some optical fiber 304, some cylindrical lens 305 that are attached to optical fiber, some independently cylindrical lens 306, the stiffener plate 307 of a reinforcing (110) silicon monocrystalline substrate 301, and the gluing layer 308 of one deck between (110) silicon monocrystalline substrate 301 and stiffener plate 307.
Article one path that arrow indicated path representation incident beam in Fig. 3 upper left side spreads out of after via the micromechanical light switch array effect.This paths is represented to be crossed from the top of hiding (111) catoptron flat board 303 by the light beam that the cylindrical lens 305 that is attached to optical fiber penetrates, pass one section independent cylindrical lens 306 that the position is in this cylindrical lens extended line direction, through dull and stereotyped 302 reflections of (111) catoptron that appears, pass the independent cylindrical lens of another section that the cylindrical lens extended line of extended line and outgoing beam intersects vertically, pass through (111) catoptron flat reflective that another piece appears again, the three section independent cylindrical lens parallel with the cylindrical lens extended line of outgoing beam by extended line passes away.
Universal law is, the light beam that transmits by any optical fiber that is arranged in micromechanical light switch array one side through the micromechanical light switch array transmission after, both can pass away, also can pass away along being arranged in micromechanical light switch array relative side right side extended line any optical fiber parallel with this optical fiber extended line along being arranged in the optical fiber that the micromechanical light switch array relative side is in this optical fiber extended line direction.
The second path that arrow indicated path representation incident beam in Fig. 3 lower right spreads out of after via the micromechanical light switch array effect.The light beam that this paths is represented to be penetrated by the cylindrical lens that is attached to optical fiber 304 is through after (111) the catoptron flat reflective that appears, the cylindrical lens extended line that enters extended line and outgoing beam intersects vertically and is attached to the cylindrical lens of another root optical fiber, and then passes away with the optical fiber that is linked to each other by it.
Universal law is, the light beam that transmits by any optical fiber that is arranged in micromechanical light switch array one side through the micromechanical light switch array transmission after, can be through being arranged in micromechanical light switch array right edge and its extended line and transmitting any optical fiber that the optical fiber extended line intersects vertically and pass away.
Fig. 4 and Fig. 5 show, (111) catoptron of micromechanical light switch array of the present invention dull and stereotyped 302 and 303 with (110) silicon monocrystalline substrate 301 Surface Vertical, its bottom is by elasticity silicon chip 312 supports that are parallel to (110) silicon monocrystalline substrate 301 surfaces.Four limits of elasticity silicon chip 312 have at least one side to be connected with the bottom of (110) silicon monocrystalline substrate 301, and another relative edge can fix, and also can freely hang.Clip is assorted between elasticity silicon chip 312 and (110) silicon monocrystalline substrate 301 rectangular enclosure 313, and this cavity separates elasticity silicon chip 312 and (110) silicon monocrystalline substrate 301 just.Cavity 313 overhung have stopper 314, the rectangular shape of this stopper, and combination in pairs, every pair of branch occupy the limit, two opposite sides of dull and stereotyped 302 or 303 bottoms of (111) catoptron.(111) catoptron dull and stereotyped 302 realizes that with vertical the separation by deep trouth 311 of (110) silicon monocrystalline substrate 301 deep trouth begins vertical incision from the surface of (110) silicon monocrystalline substrate 301, until being communicated with cavity 313 with 303.
Fig. 5 discloses, and the flexible silicon bending tablet of micromechanical light switch array of the present invention is to be driven by electrostatic force.Carrying out the power-actuated mechanism of static is plate condenser, and the one flat plate electrode of this capacitor is formed at elasticity silicon chip 312 self, and another piece plate electrode 314 is attached on the stiffener plate 307 beyond (110) silicon monocrystalline substrate 301.When being applied in a direct current voltage on two cube electrodes of plate condenser, the electrostatic repulsion forces of generation acts on the elasticity silicon chip 312, makes it deformation take place and bending in cavity.The sweep of elasticity silicon chip 312 can upwarp the leap cavity, until the stopper 314 that is hampered by the top.Along with elasticity silicon chip 312 is bent upwards, the also upwards rise thereupon of (111) catoptron flat board 302 by its support makes dull and stereotyped top protrude in the surface of (110) silicon monocrystalline substrate 301.The height of outshot is generally 15 to 20 microns greater than the diameter of fiber core.Elasticity silicon chip 312 crooked among the figure is driven plain with the part that stopper 314 contacts, even this expression (111) catoptron flat board 302 is not on the center plane of symmetry of elasticity silicon chip 312, still can keep the plumbness of (111) catoptron flat board 312 by this pressing effect.
Fig. 4 reflection (111) catoptron flat board is in the situation of non-reflective state.(111) catoptron flat board 303 is hidden in (110) silicon monocrystalline substrate 301 at this moment, the flush of its top and (110) silicon monocrystalline substrate 301.Whole core segment of optical fiber 304 and most of core segment of cylindrical lens 304 exceed (110) silicon monocrystalline substrate 301 surfaces.Can unhinderedly cross from the light beam that one section cylindrical lens that links to each other with optical fiber 304 305 penetrates, and whole in-position is in another section cylindrical lens of the cylindrical lens central axis working direction of outgoing beam from the top on dull and stereotyped 303 tops of (111) catoptron.
Fig. 5 reflection (111) catoptron flat board is in the situation of reflective condition.(111) catoptron flat board 302 is raised at this moment, and its top exceeds (110) silicon monocrystalline substrate 301 surfaces, and (111) catoptron flat board 302 that the light beam that penetrates from one section cylindrical lens that is connected with optical fiber is raised blocks the way, and is reflected by it.The central axis of this section cylindrical lens is with 135 degree angle aiming (111) catoptron flat boards 302, and the central axis that is in another section cylindrical lens of the dull and stereotyped the same side of catoptron aims at (111) catoptron flat board 302 with miter angle, the central axis Xiang Clip an angle of 90 degrees of two sections cylindrical lens, incident angle and emergence angle that light beam forms on (111) catoptron flat board 302 are miter angle, and therefore the light beam that penetrates from one section cylindrical lens can accurately enter another section cylindrical lens by Enough after dull and stereotyped 302 reflections of (111) catoptron.
Return Fig. 4 and Fig. 5, all optical fiber and cylindrical lens all place in the miniature irrigation canals and ditches.These miniature irrigation canals and ditches all form in same manufacture process, have identical geometric configuration and physical dimension, and therefore the optical fiber in the miniature irrigation canals and ditches and the central axis of cylindrical lens all are on the same surface level parallel with surface of silicon.As seen from the figure, the optical fiber in the miniature irrigation canals and ditches and the central axis of cylindrical lens become 135 degree angle or miter angles with (111) catoptron flat board, or become miter angle with the normal direction of (111) catoptron flat board.
Fig. 6 to Figure 13 is the perspective diagram that micromechanical light switch array of the present invention forms at its device components of each main manufacturing step, and all figure are partly excised, with the clear fine structure that shows its xsect.
With reference to Fig. 6, the parent material of micromechanical light switch array manufacturing of the present invention is twin polishing, light dope (110) crystal orientation silicon monocrystalline substrate 401.The doping type of this substrate is n type or p type, and doped resistor rate distribution range is 1 to 20 ohmcm, and representative value is 3 ohmcms.On silicon monocrystalline substrate 401 surfaces, the SiO of thermal oxide growth 1 micron thickness
2Layer 402.Then, to SiO
2Layer carries out photoetching corrosion, to form the SiO for ion injects and thermal diffusion is used
2Masking film.This masking film contains some rectangular apertures, is repetitive with per two adjacent rectangular apertures, launches towards mutually perpendicular both direction, forms periodic arrangement.Two rectangular aperture alinements in each unit, adjacent two minor faces are parallel to each other, and (111) crystal plane perpendicular to the silicon monocrystalline substrate surface of aligned together.At SiO
2Under the protection of masking film, form the doping type heavily doped diffusion layer 403 identical with (110) silicon monocrystalline substrate in two steps: the first step is carried out the ion injection, and second step was carried out the elevated temperature heat diffusion.The sheet resistance distribution range of the heavily doped diffusion layer 403 that forms is 4 to 20 ohm of/Fang Block, and representative value is 8 ohm of/Fang Block, and the junction depth scope is 10 to 20 microns, and representative value is 15 microns.
Used SiO is removed in corrosion
2Behind the masking film 402, the epitaxial growth doping type lightly-doped silicon epitaxial loayer 404 identical on the first surface of (110) silicon monocrystalline substrate again with (110) silicon monocrystalline substrate.The doped resistor rate distribution range of silicon epitaxy layer 404 is 1 to 20 ohmcm, and representative value is 3 ohmcms.The thickness distribution scope of silicon epitaxy layer 404 is 2 to 20 microns, and representative value is 5 microns.Then, on silicon epitaxy layer 404 surfaces, form the Si of thick 2000 dusts
3N
4Layer 405, the formation technology is the low-pressure chemical vapor deposition that carries out under 810 degrees centigrade.Then, to Si
3N
4 Layer 405 carries out photoetching corrosion, contains the masking film of some rectangular apertures with formation.At last, at Si
3N
4Carry out reactive ion etching under the protection of masking film, pass through silicon epitaxy layer 404 and arrive at the groove 406 of heavily doped diffusion layer 403 with formation, as shown in Figure 7.
After heavily doped diffusion layer forms, continue to keep the Si on (110) silicon monocrystalline substrate first surface
3N
4Layer, and, in HF solution, carry out anodic oxidation as diaphragm, heavily doped diffusion layer 403 selectivity are transformed into porous silicon layer.Anodizing tank is made by the polytetrafluoroethylmaterial material of anti-HF corrosion.Cell body is a double-chamber structure, and two Room are by treating that anodised silicon monocrystalline substrate therefrom separates, and a slice platinum electrode is joined in every chamber, is communicated with external power with this.Different with general silicon chip electrocorrosion, treat that the anodised silicon monocrystalline substrate back side does not need to make metal electrode, and, constitute liquid electrode directly by contacting with HF solution.The porous silicon that anodic oxidation forms requires to have 45% silicon single crystal density, so that form fine and close SiO subsequently
2Anodizing time will be lacked the porous silicon that ， Yi Minus forms less as far as possible and is partly dissolved by HF solution subsequently, thereby keeps its compact texture.For reaching this purpose, to select for use HF solution to contain and be that 40%HF, thinning agent are absolute ethyl alcohol, anodic current density is 35 milliamperes/square centimeter.
And then porous silicon is heat-treated, make porous silicon be transformed into as shown in Figure 8 oxidized porous silicon layer 407.The characteristics of porous silicon oxidation are that oxidizing process spreads all over whole porous silicon layer simultaneously, therefore can form thicker oxidized porous silicon layer under lower temperature and in the relatively shorter time.The SiO that the present invention requires oxidized porous silicon layer to form with thermal oxide
2The same, have more intense corrosion resistance, more stable mechanical property and lower thermal conductivity coefficient, the porous silicon oxidation generally will be experienced three step processes for this reason.The first step, in 450 degrees centigrade dry oxygen ambient, the several oxide molecule individual layers of growth on the hole wall of porous silicon, with this as the diaphragm that prevents porous silicon chap in the high-temperature process subsequently.Second step, in 850 degrees centigrade wet oxygen atmosphere, carry out thermal oxide, porous silicon layer is transformed into oxidized porous silicon layer.At this moment the oxidized porous silicon Reng Ran Clip of Sheng Chenging is assorted a spot of hole, makes its resistance to corrosion variation.In order to eliminate the hole in the oxidized porous silicon, also to carry out the 3rd step high temperature densification.The condition of high-temperature heat treatment is: 1100 degrees centigrade of temperature, atmosphere wet oxygen, 30 minutes time.
Subsequently, form the Si of thick 3000 dusts with the low-pressure chemical vapor deposition technology
3N
4Layer, as shown in Figure 8.This step processing act as two: one, filling groove 406 makes it become the groove 409 that is filled, its two, on the first surface of (110) silicon single crystal flake 401, form Si
3N
4Fu Cover layer 408.Fill flute 409, can once fill up, also can only fill out some.No matter fill up or only fill out a part, all require the Si that forms
3N
4Layer can stop the etchant solution of oxidized porous silicon to flow through from groove, to prevent to damage near the structure that must keep the groove.Then, to Si
3N
4Fu Cover layer 408 carries out photoetching corrosion, to form the contact hole opening.And then, adopt the top to take off (liftoff) technology, in the contact hole opening, form the gold contact.The main points that technology is taken off on the top are that the gold layer that the deposited by electron beam evaporation technology forms thick 4000 dusts on the photoresist figure dissolves then and removes photoresist earlier, and the gold layer on the photoresist is also together removed thereupon, only preserves the golden layer in the contact hole opening.After gold layer in the contact hole opening forms, electroplate again, the gold layer is thickeied to about 2 microns, to form the prominent bar 410 of the gold that can weld.At last, carry out Alloying Treatment, make the gold layer become Ohmic contact with contacting of silicon single crystal surface 350 degrees centigrade dried blanket of nitrogen.
Turn to Fig. 9, with 401 upsets of (110) silicon monocrystalline substrate, make its first surface down, second surface up.Use the low-pressure chemical vapor deposition technology, on the second surface of (110) silicon monocrystalline substrate 401, form thick 1 micron SiO
2Layer 411.To SiO
2Layer 411 carries out photoetching corrosion, forms the SiO of the long and narrow diamond opening that contains two string different directions arrangements
2Masking film.With (a 111) crystal plane and a substrate surface intersection perpendicular to (110) silicon monocrystalline substrate 401 surfaces is reference direction, make the terminal sideline of long and narrow diamond opening parallel with reference direction, and wherein the central axis of a string long and narrow diamond opening and reference direction intersect 135 degree angles, and another central axis and reference direction of going here and there long and narrow diamond opening intersects miter angle.In addition, per four long and narrow diamond openings constitute repetitive thus around the intersection on (a 111) crystal plane and silicon monocrystalline substrate surface, and bidimensional launches, and form the periodic distribution structure.Within with a string long and narrow diamond opening, with relative end to end, being in line arranges between each long and narrow diamond opening, (111) crystal plane intersection of Clip between the two adjacent long and narrow diamond openings.
Follow hard on, at SiO
2Carry out the deep trouth reactive ion etching under the masking film protection, to form and the corresponding miniature irrigation canals and ditches 412 of long and narrow diamond opening.The deep trouth reactive ion etching adopts the etcher that the isoionic principle of work of energy excitation is provided based on inductive coupling.This etcher can be realized the function with passivating film protection corrosion pit sidewall; the ion beam that promptly bombards sidewall has more weak corrosive power; allow that passivating film generates at sidewall; and oppose side wall is protected; and the ion beam of bombardment bottom has more intense corrosive power; can effectively peel off the passivating film of formation, make the protective effect of its forfeiture, thereby can corrode silicon layer to bottom silicon.Dark 50 microns of the irrigation canals and ditches that reactive ion etching forms, wide 60 microns, can make just to place in it, the covering external diameter is that 125 micron fiber fibre cores exceed (110) silicon monocrystalline substrate 401 surfaces.
Then, used SiO is removed in corrosion
2Layer, and on the second surface of (110) silicon monocrystalline substrate 401, form the SiO of 1 micron of another bed thickness with the low-pressure chemical vapor deposition technology
2Layer (not drawing among the figure).Then, to SiO
2Layer carries out photoetching corrosion, contains the SiO of flabellum shape opening with formation
2Masking film.And then at the SiO that contains the flabellum shape opening
2Corrode under the masking film protection, to form flabellum shape irrigation canals and ditches and Gou Liang.This flabellum shape irrigation canals and ditches and Gou Liang are used for seeking perpendicular to (111) crystal plane on silicon monocrystalline substrate 401 surfaces and the intersection of substrate surface, with this as carrying out the KOH solution corrosion subsequently to form the registration mark of high aspect ratio (111) crystal plane flat board.The flabellum shape irrigation canals and ditches arrange with separations such as 0.1 degree angles, long 3 centimetres of irrigation canals and ditches, and wide 10 microns, dark 100 microns, the distribution angle scope is from extremely positive 2 degree of negative 2 degree.The ditch beam width that corrosion forms is decided by itself and the Aligning degree of (111) crystal plane, so the lateral encroaching minimum, or the wideest person of ditch fine strain of millet is identified as the ditch fine strain of millet near (111) crystal plane direction.In general, determine that with the method the degree of accuracy of (111) crystal plane direction can reach 0.1 degree angle.
The KOH solution that corrosion formation flabellum shape irrigation canals and ditches are used is 40% KOH aqueous solution, and the temperature of etchant solution maintains 70 degrees centigrade from start to finish in corrosion process.
After the flabellum shape irrigation canals and ditches formed, SiO was removed in corrosion
2Layer forms the new SiO of another layer with the low-pressure chemical vapor deposition technology then
2Layer 413, as shown in figure 10.To SiO
2Layer 413 carries out photoetching corrosion, contains the right SiO of some diamond openings with formation
2Masking film.Two diamond opening alignment parallel to each other of diamond opening centering, its geometric center overlaps with the symcenter of four miniature irrigation canals and ditches.(a 111) crystal plane is aimed on the long limit of two vicinities of two diamond openings respectively, and two away from the perpendicular end surface of two miniature irrigation canals and ditches 412 that are arranged in a straight line of each autoregistration of long limit.The length distribution scope on the long limit of diamond opening is 200 to 500 microns, and representative value is 300 microns, and the length distribution scope of diamond opening minor face is 10 to 50 microns, and representative value is 20 microns.Scope spaced apart between two diamond openings is 2 to 50 microns, and representative value is 10 microns.
As seen from the figure, the spacing between two diamond openings is the thickness of (111) the crystal plane flat board that will form.For the top that guarantees (111) crystal plane flat board has identical thickness with the bottom, the spacing between the diamond opening should equate with spacing between its corresponding oxidized porous silicon layer 407 end faces in bottom, and its corresponding border should about perpendicular alignmnet.
Following and carrying out the KOH corrosion, at SiO
2Form etching tank in the diamond opening of masking film, and it is vertically down extended, until till the oxidized porous silicon layer 407 of contact bottom.Figure 10 expresses the microstructure that corrosion forms, and this structure comprises two wide deep trouths of 20 microns 414, and with one wide 10 microns vertical dark wall or film 415, the side of deep trouth is the side of film, is defined by (111) crystal plane.Notice that the two ends of (111) crystal plane film 415 still are connected with (110) silicon monocrystalline substrate 401 at this moment.
Next, the deposited by electron beam evaporation technology is at the two surperficial relatively gold layers that form thick 3000 dusts of going up of (111) crystal plane film 415, so that it becomes the minute surface (not drawing among the figure) with high reflectance.During evaporation, make (110) silicon monocrystalline substrate 401 surface normal directions with the transmit direction of certain angle, so that the gold layer that forms on the top of (111) crystal plane film 415 has the comparison homogeneous thickness towards electron beam.
After this, prepare an Al who contains conductive through hole 419
2O
3Stiffener plate 416, as shown in figure 11.The deposited by electron beam evaporation technology is at Al
2O
3Dull and stereotyped 416 upper surface forms the gold layer of thick 3000 dusts.The gold layer is carried out photoetching corrosion, to form electrode strip 417 and 418.Electroplate again, the gold layer of electrode strip 417 and 418 is thickeied to about 2 microns.Electrode strip 417 can be connected (not drawing among the figure) with the circuit at stiffener plate 416 back sides or the circuit on another pedestal by conductive hole 419 with 418.
Contrast Figure 12 with 401 upsets of (110) silicon monocrystalline substrate, makes first surface down, and second surface is welded to Al up then
2O
3On the stiffener plate 416.To keep prominent bar 410 of gold and Al on (110) silicon monocrystalline substrate 401 during welding
2O
3Electrode strip 418 on the stiffener plate 416 is aimed at.Then, fill and lead up miniature irrigation canals and ditches 412 and vertical deep trouth 414 with photoresist.The photoresist that adopts is preferably the plating photoresist, and the plating photoresist that can Gong select for use comprises ED2100 and PEPR2400.Electroplate photoresist and contain charged colloidal particles, micelle moves to electrode direction under electric field action, and piles up on electrode.Fill deep trouth in this way, not only deep trouth can be tamped, and groove top corner also can be lived by even Fu Cover.Carried out in order to make to electroplate, before the plating, the deposited by electron beam evaporation technology forms the aluminium lamination of a bed thickness 3000 dusts, makes its surface, inside of covering miniature irrigation canals and ditches 412 of Cover and vertical deep trouth 414, as electrode.Electroplate photoresist during plating and evenly pile up on aluminium lamination, electroplating current reduces with the photoresist layer thickening that forms, last vanishing and make to electroplate and stop.Then, with abrasive cut off machine cutting (110) silicon monocrystalline substrate 401, to form the groove 421 that vertically penetrates substrate.Groove 421 becomes the 90 degree angles of cut with the two ends of film 415, the film straight line is cut downwards, and it is vertically separated with (110) silicon monocrystalline substrate 401, thereby forms rectangle (111) the crystal plane flat board 422 that has only the lower end fixing.
After the cutting, will electroplate photoresist 420 and aluminium lamination and remove clean.Remove to electroplate photoresist acetone, the removing aluminium lamination is with 40 degrees centigrade H
3PO
4: CH
3COOH: HNO
3(29: 5: 1) solution.And then, with HF solution selective corrosion the removing oxidized porous silicon layer 407 of dilution, form elasticity silicon chip 423, cavity 424 and stopper 425.As shown in figure 13, elasticity silicon chip 423 is the strip thin slice, and its two long relatively limit is defined by groove 421, and its two relative minor face still links to each other with (110) silicon single crystal flake.(111) define by deep trouth 414 and groove 421 around the crystal plane dull and stereotyped 422, and realize longitudinal subdivision with (110) silicon monocrystalline substrate thus, and its bottom is still supported vertically upward by elasticity silicon chip 423.
As previously mentioned, (111) crystal plane flat board 422 can be on the center plane of symmetry of the fixing elasticity silicon chip 423 in two ends among Figure 13.In general, (111) crystal plane flat board 422 can be on the elasticity silicon chip 423 away from fixed edge Anywhere, comprises and the fixed edge opposed free ends, herein the deformation quantity maximum that takes place of elasticity silicon chip 423.Just be under the free-ended situation, its support place still needs to maintain a certain distance with end edge, so that the elasticity silicon chip has certain length to ride on the edge of groove 421 when contacting with stopper.
Stopper 425 is formed at the place that is communicated with of deep trouth 414 and cavity 424, combination in pairs, and every pair of branch occupy the limit, two opposite sides of dull and stereotyped 422 bottoms of (111) crystal plane.The bottom surface of stopper 425 is and parallel plane, (110) silicon monocrystalline substrate 401 surfaces, this is because stopper is that to remove oxidized porous silicon layer 407 by corrosion formed, and the plane that the border that oxidized porous silicon layer 407 forms (110) silicon monocrystalline substrate 401 in is and (110) silicon monocrystalline substrate 401 is surperficial parallel.
Cavity 424 laterally separates elasticity silicon chip 423 and (110) silicon monocrystalline substrate 401, and provides the curved space for the deformation of elasticity silicon chip.The elasticity silicon chip can be bent upwards the bottom of directing reach stopper 425, and the height that (111) crystal plane flat board 422 that this moment, the elasticity silicon chip was supported stretches out (110) silicon monocrystalline substrate 401 surfaces thereupon is equivalent to cavity thickness.If the power of elasticity silicon chip 423 bendings foot Enough is big, the front portion of its bending can be flattened by smooth stopper bottom, thus (111) the crystal plane flat board 422 that will be slightly offset set upright, make it still be in state with (110) silicon monocrystalline substrate 401 Surface Vertical.
Introduced the process that the miniature irrigation canals and ditches in (110) silicon monocrystalline substrate are formed by the deep trouth reactive ion etching above.Introduce the substitute technology that miniature irrigation canals and ditches form below, promptly use KOH solution corrosion (110) silicon monocrystalline substrate to form miniature irrigation canals and ditches.
Forming miniature irrigation canals and ditches with KOH solution corrosion (110) silicon monocrystalline substrate carries out in two steps.The first step is represented by Figure 14, at Biao Mian Fu Cover SiO
2Forming some top plan in (110) silicon monocrystalline substrate 501 of layer 502 is the corrosion pit string of rhombus.Each rhombus corrosion pit string comprises big corrosion pit 503 and 506 and little corrosion pit 504 and 507, and big or small corrosion pit is isolated mutually and arranged.The horizontal side size range of big rhombus corrosion pit is 300 to 1000 microns, and representative value is 500 microns, and vertically the vertical width scope is 300 to 600 microns, and representative value is 400 microns.Vertical vertical width model Wai of little rhombus Fu Erosion pit is 30 to 100 microns, and representative value is 50 microns.The horizontal length of side of little rhombus corrosion pit is enclosed straight footpath Decision calmly by the outer of the optical fiber that will place and cylindrical lens, as long as the diameter of optical fiber and cylindrical lens is known, just can calculate the horizontal length of side of little rhombus corrosion pit according to the simple geometric formula.
SiO is still used in the formation of corrosion pit string
2Masking graphics protection (110) silicon monocrystalline substrate surface.SiO
2Masking graphics comprises and the identical diamond opening of corrosion pit top plan figure, and the four edges of diamond opening is respectively aimed at (111) crystal plane perpendicular to (110) silicon monocrystalline substrate surface.Learn that from the diamond crystal structures characteristic of silicon single crystal (110) silicon monocrystalline substrate has four (111) crystal planes with its Surface Vertical, the intersection of these crystal planes and substrate surface Xiang Hu Clip angle is 70.5 degree or 109.5 degree.Therefore the polyhedron of pit that cause of corrosion for surrounding by six (111) crystal planes, wherein four (111) crystal planes and (110) silicon monocrystalline substrate Surface Vertical, two (111) crystal planes intersect 35.5 degree angles with (110) silicon monocrystalline substrate surface in addition.
The KOH etching condition still is 40% KOH aqueous solution and 70 degrees centigrade solution temperature.With this understanding, the corrosion rate that (110) crystal plane is produced is 0.8 micron/minute.According to known corrosion rate, the degree of depth of the pit that corrosion causes can be by the time reckoning of corrosion experience.
Figure 14 provides two corrosion pit strings, and the terminal end face of every string corrosion pit is (111) crystal plane perpendicular to (110) silicon monocrystalline substrate 501 surfaces, and two adjacent corrosion pits are isolated by vertical thin wall 505 and 508 respectively in the string.The thickness range of vertical thin wall is 1 to 5 micron, and representative value is 2 microns.The axis of the little corrosion pit in wherein a string corrosion pit folds 135 degree angles with the string transverse plane, and the axis of the little corrosion pit in another string corrosion pit folds miter angle with the string transverse plane.The extended axis of the horse of two string corrosion pits intersects vertically, and its intersection point is in the behind of two string transverse planes.The transverse width of the big corrosion pit of every string is big to the width that comprises whole little corrosion pit, make vertical partition wall width between the two adjacent corrosion pits equal the transverse width of little corrosion pit, or the side that vertical partition wall is in a side of little corrosion pit is the side of whole little corrosion pit just.
Referring to Figure 15, second step that forms miniature irrigation canals and ditches is that isotropic etch removes the vertical partition wall between two adjacent corrosion pits, and two string corrosion pits are vertically got through separately, forms miniature irrigation canals and ditches 509 and 512.Meanwhile, the two relative side at miniature irrigation canals and ditches forms the outstanding liner 511 and 513 of spine shape.The geometric configuration of the outstanding liner of spine shape and physical dimension are determined by corrosion masking graphics and etching condition, can be made its close fit will put into the optical fiber and the cylindrical lens of miniature irrigation canals and ditches by control masking graphics and etching condition.For the fibre cladding external diameter is 125 micron fiber, as vertical vertical width of setting the little diamond opening of corrosion masking graphics is 50 microns, the thickness that removes with isotropic etch is 2 microns, then can calculate the horizontal length of side of the little diamond opening of corrosion masking graphics.(111) crystal plane of facing for extended axis of the horse and its end face intersects the miniature irrigation canals and ditches at 135 degree angles, calculate to such an extent that its corresponding horizontal length of side of corroding the little diamond opening of masking graphics is 198.2 microns, (111) crystal plane of facing for extended axis of the horse and its end face intersects the miniature irrigation canals and ditches of miter angle, calculates to such an extent that horizontal length of side of the little diamond opening of its corresponding corrosion masking graphics is 231.6 microns.
Turn to Figure 16, place the optical fiber 515 of near-end with cylindrical lens in the miniature irrigation canals and ditches 509, its extended axis of the horse intersects at (111) crystal plane 510 that its end face is faced with 135 degree angles.Place the optical fiber 516 of near-end with cylindrical lens in the miniature irrigation canals and ditches 512, its axis prolongs the Long line and intersects at (111) crystal plane 514 that its end face is faced with miter angle.Two optical fiber 515 and 516 extended line intersect vertically, and its intersection point drops on (111) crystal plane 510 that its end face faces and 514 behind.
This paper has done detailed explanation to micromechanical light switch array De Knot ditch feature of the present invention and feature manufacturing step, should understand, any technician with this professional background might carry out local increasing to the present invention, replenish, deletion, and modification, but these movements will never break away from and exceed the content of claim institute's restricted portion of the present invention and regulation.
Claims (15)
1, a kind of micromechanical light switch array, its device architecture feature comprises:
(a 110) silicon monocrystalline substrate;
Catoptron flat board in some being integrated in (110) silicon monocrystalline substrate, every flat board two relatively the surface be (111) crystal plane perpendicular to (110) silicon monocrystalline substrate surface, and cover Cover light reflective film arranged;
Elasticity silicon chip in some being integrated in (110) silicon monocrystalline substrate is fixedly connected on (110) silicon monocrystalline substrate Yi Bian every elasticity silicon chip has at least, but and at its deformation position catoptron flat board of vertical support;
Cavity in some being integrated in (110) silicon monocrystalline substrate, each cavity is horizontally separated with an elasticity silicon chip and (110) silicon monocrystalline substrate;
Stopper in some being integrated in (110) silicon monocrystalline substrate is right, and every pair of stopper branch occupy the limit, two opposite sides of a catoptron flat board bottom, and the directing mirror flat board is vertical moving therefrom, and the limiting altitude that is bent upwards of definite elasticity silicon chip;
Miniature irrigation canals and ditches in some being integrated in (110) silicon monocrystalline substrate, (111) crystal plane of its longitudinal central axis extended line and catoptron flat board intersect 135 degree angle or miter angles;
Some placing in the miniature irrigation canals and ditches, and the attached optical fiber that cylindrical lens is arranged of near-end;
Some independent cylindrical lens that place in the miniature irrigation canals and ditches; And
One driving mechanism impels the flexible silicon bending tablet, and it is dull and stereotyped mobile to drive catoptron.
2, a kind of micromechanical light switch array, the thickness distribution scope of the described catoptron flat board of its claim 1 are 2 to 50 microns.
3, a kind of micromechanical light switch array, the thickness distribution scope of the described elasticity silicon chip of its claim 1 are 2 to 20 microns.
4, a kind of micromechanical light switch array, the thickness distribution scope of the described cavity of its claim 1 are 10 to 20 microns.
5, a kind of micromechanical light switch array, the described cylindrical lens of its claim 1 by fiber core refractive index radially the optical fiber of slope change formed.
6, a kind of micromechanical light switch array, the described driving mechanism of its claim 1 is a plate condenser, wherein a plate electrode is formed by described elasticity silicon chip.
7, a kind of method of making micromechanical light switch array, the feature structure of this micro-mechanical-optical switch Array row comprises (110) silicon monocrystalline substrate, silicon (111) crystal plane catoptron flat board, elasticity silicon chip, cavity, stopper is right, miniature irrigation canals and ditches, optical fiber, cylindrical lens, and driving mechanism etc., its manufacturing feature step comprises:
Prepare light dope (110) silicon monocrystalline substrate of a polishing both surfaces;
In the first surface of (110) silicon monocrystalline substrate, form the doping type heavily doped diffusion layer identical with substrate;
On the first surface of (110) silicon monocrystalline substrate, form the doping type lightly-doped silicon epitaxial loayer identical with substrate;
In HF solution, carry out anodic oxidation, the heavily doped diffusion layer selectivity in (110) silicon monocrystalline substrate is transformed into porous silicon layer;
Carry out thermal oxide, the porous silicon layer selectivity is transformed into oxidized porous silicon layer;
Carry out metalized, on the first surface of (110) silicon monocrystalline substrate, form the prominent bar of metal of metallic circuit line and welding usefulness;
Second surface internal corrosion in (110) silicon monocrystalline substrate forms miniature irrigation canals and ditches, makes its longitudinal central axis extended line and (111) crystal plane crossing 135 perpendicular to (110) silicon monocrystalline substrate surface spend angle or miter angles;
In the second surface of (110) silicon monocrystalline substrate, form silicon single crystal thin film perpendicular to substrate surface with the KOH solution corrosion, make its two relatively the surface be (111) crystal plane;
Form light reflective film on the surface relatively at two of silicon single crystal thin film;
(110) silicon monocrystalline substrate and one are had conductive through hole, and the stiffener plate of surface metal circuit connection and metal electrode welds together;
Filling groove with photoresist on the second surface of (110) silicon monocrystalline substrate, and with crusher cutting silicon single crystal thin film and elasticity silicon chip, make silicon single crystal thin film form the silicon single crystal flat board, and all vertically separate with silicon monocrystalline substrate with the elasticity silicon chip; At last
Oxidized porous silicon layer is removed in selective corrosion, forming cavity, and elasticity silicon chip, and stopper, and optical fiber and cylindrical lens inserted miniature irrigation canals and ditches.
8, a kind of method of making micromechanical light switch array, the resistivity distribution scope of the described light dope of its claim 7 (110) silicon monocrystalline substrate is 1 to 20 ohmcm.
9, a kind of method of making micromechanical light switch array, the resistivity distribution scope of the described lightly-doped silicon epitaxial loayer of its claim 7 are 1 to 20 ohmcm.
10, a kind of method of making micromechanical light switch array, the square resistance distribution range of the described heavily doped diffusion layer of its claim 7 are 40 to 20 ohms/square.
11, a kind of method of making micromechanical light switch array, the thickness distribution scope of the described heavily doped diffusion layer of its claim 7 are 10 to 20 microns.
12, a kind of method of making micromechanical light switch array, the thickness distribution scope of the described lightly-doped silicon epitaxial loayer of its claim 7 are 2 to 20 microns.
13, a kind of method of making micromechanical light switch array, its claim 7 described (111) crystal plane catoptron slab-thickness distribution range is 2 to 50 microns.
14, a kind of method of making micromechanical light switch array, the described miniature irrigation canals and ditches of its claim 7 are formed by the deep trouth reactive ion etching.
15, a kind of method of making micromechanical light switch array, the described miniature irrigation canals and ditches of its claim 7 are formed by KOH solution anisotropic etch.
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| CNB011040823A CN1172204C (en) | 2001-02-22 | 2001-02-22 | Micromechanical light switch array |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262293A (en) * | 2010-05-27 | 2011-11-30 | 华为技术有限公司 | Optical switch and optical switch array |
| CN103399420A (en) * | 2013-06-18 | 2013-11-20 | 山西大学 | General type rapid optical switch device driven through piezoelectricity |
| CN108803249A (en) * | 2008-09-30 | 2018-11-13 | 卡尔蔡司Smt有限责任公司 | Microlithographic projection exposure apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0518732D0 (en) * | 2005-09-14 | 2005-10-19 | Polatis Ltd | Latching switch improvements |
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2001
- 2001-02-22 CN CNB011040823A patent/CN1172204C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803249A (en) * | 2008-09-30 | 2018-11-13 | 卡尔蔡司Smt有限责任公司 | Microlithographic projection exposure apparatus |
| CN102262293A (en) * | 2010-05-27 | 2011-11-30 | 华为技术有限公司 | Optical switch and optical switch array |
| WO2011147292A1 (en) * | 2010-05-27 | 2011-12-01 | 华为技术有限公司 | Optical switch and optical switch array |
| CN102262293B (en) * | 2010-05-27 | 2013-04-24 | 华为技术有限公司 | Optical switch and optical switch array |
| US9042689B2 (en) | 2010-05-27 | 2015-05-26 | Huawei Technologies Co., Ltd. | Optical switch and optical switch array |
| CN103399420A (en) * | 2013-06-18 | 2013-11-20 | 山西大学 | General type rapid optical switch device driven through piezoelectricity |
| CN103399420B (en) * | 2013-06-18 | 2015-09-30 | 山西大学 | The universal fast optical switchgear of Piezoelectric Driving |
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|---|---|
| CN1172204C (en) | 2004-10-20 |
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