CN1346974A - Pressure sensor with high-temp strain nano membrane - Google Patents
Pressure sensor with high-temp strain nano membrane Download PDFInfo
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- CN1346974A CN1346974A CN 01131545 CN01131545A CN1346974A CN 1346974 A CN1346974 A CN 1346974A CN 01131545 CN01131545 CN 01131545 CN 01131545 A CN01131545 A CN 01131545A CN 1346974 A CN1346974 A CN 1346974A
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Abstract
A high-temp pressure sensor with strain-sensitive nano-membrane is composed of pressure transfer connecting tube, pressure-bearing steel cup with deposited multiple membrane layers on its elastic bottom, and casing. Said membrane layers are sequentially the insulating-isolating membrane consisting of 5 alternative nano Ta2O5 layers and SiO2 or Al2O3 layers, strain-sensitive nano membrane made of Ni-Cr alloy, electrically leading out membrane, and passivated protecting membrane. Its advantages are wide temp range, high precision due to compensating circuit, and durable stability.
Description
Technical field: the present invention relates to strain pressure transducer, relate in particular to the technological improvement of high-temp strain formula diaphragm pressure sensor.
Background technology: on equipments such as aerospacecraft, aircraft, naval vessel, battlebus, tank, in the work such as pressure survey of oil field exploration, down-hole pressure measurement, engine or hydraulic machinery and water supply and sewage device, all need the working pressure sensor.At present, resistance strain type pressure sensor is divided three classes: the first kind is to adopt organic gel that function strain paillon foil is sticked on the flexible sheet of pressure chamber, but because forced-slip between adhered layer and organic gel are aging, cause the stability and the poor reliability of pressure transducer, temperature variation is big to Effect on Performance, and operating temperature range is narrow; Second class is to adopt method for printing screen, the function strain gauge material is printed on the flexible sheet of pressure chamber, and this thick film strain pressure transducer exists precision not high equally, the shortcoming that operating temperature range is narrow; The 3rd class is to adopt the sputtering deposit thin-film technique, the function strain gauge material is deposited on the flexible sheet of pressure chamber, the stability of this class diaphragm pressure sensor is significantly improved, reliability is also better, the more above-mentioned two kinds of sensors of operating temperature range are widened to some extent, but, the particle of deposition film produces because being the physical vapor deposition process, film exists crystal grain big, it is loose to distribute, the defective of poor adhesive force, cause the moving/static electrical property of sensor, antiskid moves/mechanical propertys such as creep, send out/heat radiation and working temperature equitemperature performance are still undesirable, and the poor repeatability of product, yield rate is low, costs an arm and a leg, and has influenced its popularizing application prospect.
Summary of the invention: technical matters to be solved by this invention is, provides that a kind of operating temperature range is wideer, measuring accuracy and long-time stability are better and the higher pressure sensor with high-temp strain nano membrane of yield rate.
For this reason; technical scheme of the present invention is: a kind of pressure sensor with high-temp strain nano membrane; be by threaded and impulse connecting pipe sealing ring; be deposited with the pressure-bearing steel bowl and the outer cover of multilayer film at the bottom of the flexible cup; so that closely socket and sealing form in turn; outwards be followed successively by at the bottom of the multilayer film own elasticity cup: the insulation barrier film; the strain sensitive nanometer film; the lead-in wire conducting film; the passivation protection film; draw by outer cover with the output lead that the lead-in wire conducting film is connected; it is characterized in that: described insulation barrier film is by nanometer scale metal oxide layer and dielectric layer multilayer alternating deposition and form, and its gross thickness is between 4000～7000 nanometers.
Metal oxide layer in the described insulation barrier film has five layers, and its composition is Ta
2O
5, dielectric layer also has five layers, and its composition is SiO
2, or Al
2O
3Described strain sensitive nanometer film is that its thickness is between 50～120 nanometers by the Ni-Cr alloy material deposit of nanometer scale, the planar resistor that photoetching forms; Described passivation protection film is a kind of deielectric-coating, and its composition is SiO
2Or SiO, thickness is between 350～550 nanometers; Be deposited with the lead-in wire conducting film on the pad drawing of described planar resistor, its material is golden, and thickness is welded with golden mariages internal lead on the golden lead-in wire conducting film between 1000～2000 nanometers; Surface smoothness at the bottom of the flexible cup of described pressure-bearing steel bowl reaches more than 10 grades.
Described strain sensitive nanometer film forms eight planar resistors, and four at center, four ground, edge are evenly distributed on the flexible cup basal surface, and draw the golden mariages internal lead of the six roots of sensation.
Described pressure-bearing steel bowl is welded on the upper end of impulse connecting pipe, outer cover is welded on the upper end of pressure-bearing steel bowl, also be welded with belt support at the bottom of outer cover is with interior flexible cup, be fixed with the outer lead plate on the support that goes in ring, also be provided with the screw rod securing member on the ring support with separation, fixed compensation circuit plate.
Described outer lead plate is to form eight relaying gold plated pads on ceramic substrate, holds the golden mariages internal lead of the six roots of sensation that is welded with the planar resistor bridge circuit on it respectively; Described compensating circuit plate is high temperature resistant chemical fibre scale board or ceramic substrate printed circuit board (PCB), its input lead respectively with the outer lead plate on four relaying gold plated pads weld mutually, receive the electric signal of planar resistor bridge circuit output, handled the back by the output lead output voltage signal.
The top of described outer cover has the output lead mouth, also is with heatproof rubber-plastic sealing cover on the output lead mouth, and output lead is drawn from above-mentioned mouth, cover mesopore.
Owing to adopted the said structure improvement, introduced the five layers of alternating depositions insulation barrier film and the strain sensitive nanometer film of nanometer scale, nanometer film adhesion and density are increased greatly; And the ceramic substrate of outer lead plate makes the rapid conduction of heat that comes from the conduction of strain sensitive nanometer film distribute for the sensor outer wall, prevent gathering, heating up of heat in the circuit board effectively, and stopped the conduction of heat to isolated compensating circuit plate, guaranteed that compensating circuit can stably work under more stable environment temperature, further improved performances such as measuring accuracy, stability.So, the synthesis precision (containing non-linear, repeated, lag error) of the existing like product of pressure sensor with high-temp strain nano membrane of the present invention and zero point temperature float and improved an order of magnitude, insulation and bridge resistance, improve twice, operating temperature range has been expanded about 150 ℃ and 200 ℃ respectively to hot and cold two ends, and long-time stability, dynamic property are improved, anti-vibration, shock-resistant and anti-electromagnetic-radiation, concrete parameter is:
Synthesis precision: 0.05～0.2 grade, zero temperature drift :≤0.005%FS/ ℃,
Insulation resistance: 〉=10
5M Ω/100V.DC, zero point time drift:＜0.1%FS/,
Operating temperature range :-200 ℃～+ 300 ℃ gaging pressure: 0～100MPa,
Long-time stability:＞10 years, arm resistance: 2～10K Ω.
In addition, the application of the insulation barrier film that strain sensitive nanometer film and multilayer replace can cooperate ion to move the film deposition techniques of atom, simplifies technology, improves yield rate, reduces production costs, thereby has improved competition capability greatly.
Description of drawings: the present invention is made an explanation below in conjunction with accompanying drawing.
Fig. 1 is the general structure cross-sectional schematic of the embodiment of the invention.
Fig. 2 is at the bottom of the flexible cup and the partial structurtes cross-sectional schematic of multilayer film.
Embodiment: as shown in Figure 1: a kind of pressure sensor with high-temp strain nano membrane, it is impulse connecting pipe 2 by threaded and sealing ring 1,3-1 is deposited with the pressure-bearing steel bowl 3 and the outer cover 5 of multilayer film 4 at the bottom of the flexible cup, so that closely socket and sealing form in turn, that is: pressure-bearing steel bowl 3 is welded on the upper end of impulse connecting pipe 2, outer cover 5 is welded on the periphery of 3-1 at the bottom of the flexible cup, at the bottom of outer cover 5 is with interior flexible cup, also be welded with the support 6 that goes in ring on the 3-1, be fixed with outer lead plate 7 on the belt support 6, also be provided with screw rod securing member 8 on the ring support 6 to separate, fixed compensation circuit plate 9; Described outer lead plate 7 is to form eight relaying gold plated pads on ceramic substrate, holds the golden mariages internal lead 10 of the six roots of sensation that is welded with the planar resistor bridge circuit (only draw wherein two) on it respectively; Described compensating circuit plate 9 is high temperature resistant chemical fibre scale board or ceramic substrate printed circuit board (PCB), its input lead 11 respectively with outer lead plate 7 on four relaying gold plated pads weld mutually, promptly only select four planar resistors to form Wheatstone bridge (all the other four planar resistors are as standby), and receive the electric signal that the planar resistor bridge circuit is exported, handled the back by output lead 12 output voltage signals; The top of described outer cover 5 has output lead mouth 5-1, also is with heatproof rubber-plastic sealing cover 13 on the output lead mouth 5-1, and output lead 12 is drawn from above-mentioned mouth 5-1, cover 13 mesopores.
As shown in Figure 2: 3-1 outwards is followed successively by at the bottom of the multilayer film 4 own elasticity cups: insulation barrier film 4-1, strain sensitive nanometer film 4-2, lead-in wire conducting film 4-3, passivation protection film 4-4; it is characterized in that: described insulation barrier film 4-1 is by nanometer scale metal oxide layer and five layers of alternating deposition of dielectric layer and form; its gross thickness is between 4000～7000 nanometers; wherein; metal oxide layer has five layers, and its composition is Ta
2O
5, dielectric layer also has five layers, and its composition is SiO
2, or Al
2O
3Described passivation protection film 4-4 is a kind of deielectric-coating, and its composition is SiO
2Or SiO, thickness is between 350～550 nanometers; Described strain sensitive nanometer film 4-2 is by the Ni-Cr alloy material deposit of nanometer scale, eight planar resistors of thickness between 50～120 nanometers that photoetching forms, and four at center, four ground, edge are evenly distributed on 3-1 surface at the bottom of the flexible cup; Be deposited with lead-in wire conducting film 4-3 on the pad 4-20 drawing of described planar resistor, its material is golden, thickness is welded with 10, eight planar resistors of golden mariages internal lead and draws the golden mariages internal lead 10 of the six roots of sensation between 1000～2000 nanometers on the golden lead-in wire conducting film 4-3; The surface smoothness of 3-1 reaches more than 10 grades at the bottom of the flexible cup of described pressure-bearing steel bowl 3.
Now further specify its principle of work in conjunction with above accompanying drawing:
After measured medium (gas, liquid) enters in the impulse connecting pipe 2, its pressure acts at the bottom of the flexible cup of circular pressure-bearing steel bowl 3 on the 3-1,3-1 produces distortion at the bottom of the flexible cup, cause the planar resistor bridge circuit out of trim on the strain sensitive nanometer film 4-2, and to draw pad 4-20 from four be golden mariages four the relaying legs of 10 output pressure electric signal to the outer lead plate 7 that go between, because the thickness of multilayer film 4 is thinner, the bridge resistance, value is bigger, insulating property are better, so signal response performance and stability all improve greatly; And the ceramic substrate of outer lead plate 7 makes the rapid conduction of heat that comes from strain sensitive nanometer film 4-2 conduction distribute for the sensor outer wall, prevent gathering, heating up of heat in the circuit board effectively, and stopped the conduction of heat to isolated compensating circuit plate 9, guaranteed that compensating circuit can stably work under more stable environment temperature, further improved performances such as measuring accuracy, stability; Compensating circuit is outwards exported through signal output lead 12 further do temperature, output compensation correction at zero point from the electric signal of strain sensitive nanometer film 4-2 after.
Claims (6)
1; a kind of pressure sensor with high-temp strain nano membrane; be by threaded and impulse connecting pipe sealing ring; be deposited with the pressure-bearing steel bowl and the outer cover of multilayer film at the bottom of the flexible cup; so that closely socket and sealing form in turn; outwards be followed successively by at the bottom of the multilayer film own elasticity cup: the insulation barrier film; the strain sensitive nanometer film; the lead-in wire conducting film; the passivation protection film; draw by outer cover with the output lead that the lead-in wire conducting film is connected; it is characterized in that: described insulation barrier film is by nanometer scale metal oxide layer and dielectric layer multilayer alternating deposition and form, and its gross thickness is between 4000～7000 nanometers.
2, pressure sensor with high-temp strain nano membrane as claimed in claim 1 is characterized in that: the metal oxide layer in the described insulation barrier film has five layers, and its composition is Ta
2O
5, dielectric layer also has five layers, and its composition is SiO
2, or Al
2O
3Described strain sensitive nanometer film is that its thickness is between 50～120 nanometers by the Ni-Cr alloy material deposit of nanometer scale, the planar resistor that photoetching forms; Described passivation protection film is a kind of deielectric-coating, and its composition is SiO
2Or SiO, thickness is between 350～550 nanometers; Be deposited with the lead-in wire conducting film on the pad drawing of described planar resistor, its material is golden, and thickness is welded with golden mariages internal lead on the golden lead-in wire conducting film between 1000～2000 nanometers; Surface smoothness at the bottom of the flexible cup of described pressure-bearing steel bowl reaches more than 10 grades.
3, pressure sensor with high-temp strain nano membrane as claimed in claim 1 or 2, it is characterized in that: described strain sensitive nanometer film forms eight planar resistors, four at center, four ground, edge are evenly distributed on the flexible cup basal surface, and draw the golden mariages internal lead of the six roots of sensation.
4, pressure sensor with high-temp strain nano membrane as claimed in claim 3, it is characterized in that: described pressure-bearing steel bowl is welded on the upper end of impulse connecting pipe, outer cover is welded on the upper end of pressure-bearing steel bowl, also be welded with belt support at the bottom of outer cover is with interior flexible cup, be fixed with the outer lead plate on the belt support, also be provided with the screw rod securing member on the ring support with separation, fixed compensation circuit plate.
5, pressure sensor with high-temp strain nano membrane as claimed in claim 4 is characterized in that: described outer lead plate is to form eight relaying gold plated pads on ceramic substrate, holds the golden mariages internal lead of the six roots of sensation that is welded with the planar resistor bridge circuit on it respectively; Described compensating circuit plate is high temperature resistant chemical fibre scale board or ceramic substrate printed circuit board (PCB), its input lead respectively with the outer lead plate on four relaying gold plated pads weld mutually, receive the electric signal of planar resistor bridge circuit output, handled the back by the output lead output voltage signal.
6, pressure sensor with high-temp strain nano membrane as claimed in claim 5 is characterized in that: the top of described outer cover has the output lead mouth, also is with heatproof rubber-plastic sealing cover on the output lead mouth, and output lead is drawn from above-mentioned mouth, cover mesopore.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01131545 CN1346974A (en) | 2001-11-16 | 2001-11-16 | Pressure sensor with high-temp strain nano membrane |
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|---|---|---|---|
| CN 01131545 CN1346974A (en) | 2001-11-16 | 2001-11-16 | Pressure sensor with high-temp strain nano membrane |
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Family
ID=4670672
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100390518C (en) * | 2004-01-30 | 2008-05-28 | 株式会社电装 | Sensor |
| CN102435380A (en) * | 2011-10-28 | 2012-05-02 | 芜湖通和汽车管路系统有限公司 | High-range hydraulic sensor and manufacturing method thereof |
| CN101639391B (en) * | 2009-09-07 | 2012-07-04 | 哈尔滨工业大学 | Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof |
| CN102539055A (en) * | 2012-02-13 | 2012-07-04 | 苏州文智芯微系统技术有限公司 | High-temperature-resistant anti-corrosion pressure sensor based on smart-cut silicon isolation chip |
| CN103175647A (en) * | 2011-12-23 | 2013-06-26 | 上海立新液压有限公司 | High-pressure resistant pressure sensor |
| CN104697699A (en) * | 2013-12-06 | 2015-06-10 | 长野计器株式会社 | Physical quantity measuring sensor and sensor module |
| CN106768589A (en) * | 2017-01-10 | 2017-05-31 | 北京中航兴盛测控技术有限公司 | High accuracy diaphragm pressure sensor |
| CN107024320A (en) * | 2016-01-29 | 2017-08-08 | 株式会社鹭宫制作所 | Refrigerant loop component parts |
| CN107206190A (en) * | 2014-12-02 | 2017-09-26 | 新加坡科技研究局 | Sensor patch and the sensing device further with the sensor patch |
| CN107631833A (en) * | 2017-10-17 | 2018-01-26 | 北京中航兴盛测控技术有限公司 | Superhigh temperature pressure sensor and its manufacture method |
| CN108195502A (en) * | 2017-12-21 | 2018-06-22 | 中国电子科技集团公司第四十八研究所 | A kind of engine sensor |
| CN109100079A (en) * | 2018-10-15 | 2018-12-28 | 伟业智芯（北京）科技有限公司 | Novel union pressure sensor and manufacturing method |
| CN109738109A (en) * | 2019-01-31 | 2019-05-10 | 南京信息工程大学 | A kind of high temperature micro-pressure pressure sensor and preparation method thereof, measuring system |
| CN113061838A (en) * | 2021-03-18 | 2021-07-02 | 中北大学 | Thin film sensor and preparation method thereof |
-
2001
- 2001-11-16 CN CN 01131545 patent/CN1346974A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100390518C (en) * | 2004-01-30 | 2008-05-28 | 株式会社电装 | Sensor |
| CN101639391B (en) * | 2009-09-07 | 2012-07-04 | 哈尔滨工业大学 | Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof |
| CN102435380A (en) * | 2011-10-28 | 2012-05-02 | 芜湖通和汽车管路系统有限公司 | High-range hydraulic sensor and manufacturing method thereof |
| CN103175647A (en) * | 2011-12-23 | 2013-06-26 | 上海立新液压有限公司 | High-pressure resistant pressure sensor |
| CN102539055A (en) * | 2012-02-13 | 2012-07-04 | 苏州文智芯微系统技术有限公司 | High-temperature-resistant anti-corrosion pressure sensor based on smart-cut silicon isolation chip |
| CN102539055B (en) * | 2012-02-13 | 2014-04-09 | 苏州文智芯微系统技术有限公司 | High-temperature-resistant anti-corrosion pressure sensor based on smart-cut silicon isolation chip |
| US10113926B2 (en) | 2013-12-06 | 2018-10-30 | Nagano Keiki Co., Ltd. | Ceramic sensor module including diaphragm and cylindrical portion integrated with the diaphragm |
| CN104697699A (en) * | 2013-12-06 | 2015-06-10 | 长野计器株式会社 | Physical quantity measuring sensor and sensor module |
| CN107206190A (en) * | 2014-12-02 | 2017-09-26 | 新加坡科技研究局 | Sensor patch and the sensing device further with the sensor patch |
| US10512431B2 (en) | 2014-12-02 | 2019-12-24 | Agency For Science, Technology Ano Research | Sensor patch and sensing device having the same |
| CN107024320A (en) * | 2016-01-29 | 2017-08-08 | 株式会社鹭宫制作所 | Refrigerant loop component parts |
| CN106768589A (en) * | 2017-01-10 | 2017-05-31 | 北京中航兴盛测控技术有限公司 | High accuracy diaphragm pressure sensor |
| CN107631833A (en) * | 2017-10-17 | 2018-01-26 | 北京中航兴盛测控技术有限公司 | Superhigh temperature pressure sensor and its manufacture method |
| CN107631833B (en) * | 2017-10-17 | 2023-11-03 | 松诺盟科技有限公司 | Ultra-high temperature pressure sensor and manufacturing method thereof |
| CN108195502A (en) * | 2017-12-21 | 2018-06-22 | 中国电子科技集团公司第四十八研究所 | A kind of engine sensor |
| CN109100079A (en) * | 2018-10-15 | 2018-12-28 | 伟业智芯（北京）科技有限公司 | Novel union pressure sensor and manufacturing method |
| CN109738109A (en) * | 2019-01-31 | 2019-05-10 | 南京信息工程大学 | A kind of high temperature micro-pressure pressure sensor and preparation method thereof, measuring system |
| CN109738109B (en) * | 2019-01-31 | 2024-02-13 | 南京信息工程大学 | High-temperature micro-pressure sensor, manufacturing method thereof and measuring system |
| CN113061838A (en) * | 2021-03-18 | 2021-07-02 | 中北大学 | Thin film sensor and preparation method thereof |
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