CN1340852A - Technology for making printed convex block on semiconductor carrier - Google Patents
Technology for making printed convex block on semiconductor carrier Download PDFInfo
- Publication number
- CN1340852A CN1340852A CN00122885A CN00122885A CN1340852A CN 1340852 A CN1340852 A CN 1340852A CN 00122885 A CN00122885 A CN 00122885A CN 00122885 A CN00122885 A CN 00122885A CN 1340852 A CN1340852 A CN 1340852A
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- China
- Prior art keywords
- adhesive tape
- carrier
- tin
- convex block
- synthetic adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A technology for making convex block and semiconductor wafer or substrate includes such steps as using high-stability heat-resisting systhetic adhesive tape to cover the surface of wafer or substrate, perforating the synthetic adhesive tape by laser at proper position of corresponding under-block metal layer, brushing the tin cream in the holes, high-temp. welding to form welding pads, removing the synthetic adhesive tape, and welding again to form convex spherical block on the under-block metal layer of wafer or substrate.
Description
The present invention relates to a kind of manufacture method of printed convex block on semiconductor carrier, the manufacture method of printed convex block on particularly a kind of semiconductor crystal wafer or the substrate.
The high-order encapsulation technology of a new generation is with ball grid array structure dress (Ball-Grid-Array, BGA), wafer size structure dress (Chip-Size/Scale-package, CSP), to cover crystalline substance (Flip-Chip) technology be main flow, and these technology are mainly based on the crystal covered package technology.The crystal covered package technology general reference of broad sense sees through metallic conductor and substrate (substrate) in ventricumbent mode after wafer is overturn, and engages.Generally speaking, metallic conductor is ripe with the technology of metal coupling (metal bump), also being widely used among the product of volume production the low cost in its metal coupling manufacturing process plants playing skill art (low cost bum-ping technology) and uses electroless nickel plating/gold (electroless Ni/Au) and form metal level (under bump metallurgy below the projection, UBM) cooperate the mode of printing to plant ball again, its known main processing procedure schematically as follows:
Elder generation goes up application electroless nickel plating/gold at the aluminium (AL) on the surface of wafer (wafer) and forms the UBM layer; Be covered with one deck photoresist (photo-resist) and give preheating on crystalline substance figure surface; Above wafer, hide (Mask) and intercept and impose the exposure imaging imaging, make on UBM layer position and form blind hole with suitable cover; The continuous brush board that utilizes is inserted the tin cream brush in the blind hole, makes tin cream melt into tin slab through the high temperature reflow, again this photoresist is removed the back with chemical agent and also cleans, and only stays the tin slab of projection on the wafer, and this tin slab promptly forms spherical tin ball after the high temperature reflow second time is handled.
The known projection shaping processing procedure of this kind all has shortcoming in the process that covers photoresist, light lithography imaging and removal photoresist:
1, this photoresist needs to spend the hard time of the universe after covering;
2, when the light lithography imaging process, must make the light shield of positioning and imaging in addition, also increase the weight of manufacturing cost;
3, after the reflow first time is handled, its photoresist must be removed with chemistry or physics mode, and whole procedure is more loaded down with trivial details again, and is more time-consuming;
For any one industry, time-consuming is exactly to spend money.At the shortcoming of above-mentioned conventional process, the present invention uses a novel processing procedure, can effectively simplify processing procedure, and keep production cost.
The object of the present invention is to provide a kind of manufacture method of printed convex block on semiconductor carrier, the manufacture method of printed convex block on particularly a kind of semiconductor crystal wafer or the substrate, the present invention adopts thermal endurance, the good rubber polymer of stability brings the replacement photoresist, overwrite procedure is simple, can be attached to brilliant figure surface fast, and with program control laser positional punch, through print solder paste, after the high temperature reflow, directly tear adhesive tape off and can carry out the reflow second time, can simplify the multiple tracks processing procedure effectively, save time and keep solid-state operation, must not lose time and wait for the cleaning of chemical agent, the season time.
The object of the present invention is achieved like this: a kind of manufacture method of printed convex block on semiconductor carrier, be to be attached to carrier surface with synthetic adhesive tape, form pothole with the laser perforation means, continue and tin cream is inserted hole location with brush board, after high temperature reflow processing makes tin cream dissolve into the weldering ingot, tear this synthetic adhesive tape again off, form the tin ball after the high temperature reflow second time is handled, its processing procedure is:
A, on the surface of carrier, form and desire the metal object that coated;
B, post synthetic adhesive tape at carrier surface:
C, above synthetic adhesive tape the appropriate location, impose the laser perforation;
D, after laser perforation, get blind hole at synthetic adhesive tape;
E, utilize brush board that tin cream brush is inserted in the blind hole;
F, make tin cream melt into tin slab through the high temperature reflow;
G, should synthesize adhesive tape again and directly tore off, only stay the tin slab of projection on the carrier;
H, after second time high temperature reflow is handled, this tin slab promptly forms spherical tin ball on metal level below the projection.
Described semiconductor carrier can be semiconductor crystal wafer, and described semiconductor carrier also can be semiconductor substrate.The described metal object of desiring to be coated can be metal level below the projection that forms on the aluminium on the surface of carrier.The described metal object of desiring to be coated also can be and is copper wire.
The manufacture method of printed convex block on semiconductor crystal wafer provided by the present invention or the substrate, adopt thermal endurance, the good rubber polymer of stability to bring the replacement photoresist, overwrite procedure is simple, can be attached to brilliant figure surface fast, and with program control laser positional punch, after print solder paste, high temperature reflow, directly tear adhesive tape off and can carry out the reflow second time, can simplify the multiple tracks processing procedure effectively, save time and keep solid-state operation, must not lose time and wait for cleaning, the season time of chemical agent.The present invention also can be applicable to as the metal coupling shaping on the ball bar display substrates (substrate) such as (BGA) and the lining processing procedure of scolder.
Further describe the present invention below in conjunction with accompanying drawing:
Fig. 1 a-1h is known chip metal projection shaping processing procedure schematic diagram.
Fig. 2 a-2h is the protruding processing procedure schematic diagram that certainly is shaped of chip metal of the present invention.
Fig. 3 a-3h is the schematic diagram of another embodiment of the present invention (copper contact of substrate is planted the ball processing procedure).
Symbol brief description among the figure:
1, wafer, 11, aluminium, 12, projection below metal level UBM, 13, polyimides, 14, silicon; 2, photoresist, 21, blind hole, 2a, synthetic adhesive tape, 2a1, blind hole; 3, cover hides, and 4, brush board, 5, tin cream, 6, tin slab, 7, the tin ball, 8, substrate, 81, the polyimide layer, 82, copper wire, 83, synthetic adhesive tape, 831, blind hole, 84, brush board, 85, tin cream, 86, tin slab, 87, the tin ball.
See also Fig. 1 a-1h, be known chip metal projection shaping processing procedure schematic diagram.Elder generation uses electroless nickel plating/gold and forms UBM layer 12 on the aluminium (AL) 11 on the surface of wafer (wafer) 1; Be covered with one deck photoresist (photo-resist) 2 on crystalline substance figure surface and give preheating; Above wafer, hide (Mask) 3 obstructs and impose the exposure imaging imaging, make and on UBM layer position, form blind hole 21 with suitable cover; The continuous brush board 4 that utilizes is inserted tin cream 5 brushes in the blind hole, make tin cream melt into tin slab 6 through the high temperature reflow, again this photoresist is removed back and cleaning with chemical agent, only stay the tin slab of projection on the wafer, this tin slab promptly forms spherical tin ball 7 after the high temperature reflow second time is handled.
In the known chip metal projection shaping processing procedure, photoresist needs to spend the hard time of the universe after covering; And when the light lithography imaging process, must make in addition the light shield of positioning and imaging, and also increasing the weight of manufacturing cost and also have after the reflow first time is handled, its photoresist must be removed with chemistry or physics mode, and whole procedure is more loaded down with trivial details again, and is more time-consuming.
Please refer to shown in Fig. 2 a-2h, be chip metal projection shaping processing procedure schematic diagram of the present invention.
The manufacture method of printed convex block on semiconductor crystal wafer of the present invention or the substrate, be attached to crystal column surface with synthetic adhesive tape, form pothole with the laser perforation means, continue and tin cream is inserted hole location with brush board, after high temperature reflow processing makes tin cream dissolve into the weldering ingot, tear this synthetic adhesive tape again off, after the high temperature reflow second time is handled, form the processing procedure of ball.
Please refer to shown in Fig. 2 a-2h, its processing procedure is:
A, on the aluminium (Al) 11 on the surface of wafer 1, use electroless nickel plating/gold and form UBM layer 12, shown in Fig. 2 a.
B, post synthetic adhesive tape 2a on wafer 1 surface, shown in Fig. 2 b.
C, above synthetic adhesive tape 2a appropriate location (with respect to the position of UBM layer 12), impose the laser perforation, shown in Fig. 2 c.
D, after laser perforation, get blind hole 2a1 at synthetic adhesive tape 2a, shown in Fig. 2 d.
E, utilize brush board 4 that tin cream 5 brush is inserted in the blind hole 2a1, shown in Fig. 2 e.
F, make tin cream 5 melt into tin slab 6 through the high temperature reflow, shown in Fig. 2 f.
G, should synthesize adhesive tape 2a again and directly tore off, only stay the tin slab 6 of projection on the wafer 1, shown in Fig. 2 g.
H, after second time high temperature reflow is handled, this tin slab 6 forms the tin ball 7 of sphere on UBM layer 12.
The invention is not restricted to use electroless nickel plating/gold and form UBM layer 12, using additive method formation UBM layer also can be general.
Processing procedure directly sticks synthetic adhesive tape 2a on wafer 1 when processing procedure b in view of the above, and is quick and convenient; And when processing procedure c with the laser perforation means, directly on synthetic adhesive tape 2a, punch, and after directly tearing synthetic adhesive tape 2a after the reflow off, can carry out the secondary reflow and handle, whole processing procedure directly fast, can save Production Time in a large number.
Please refer to shown in Fig. 3 a-3h, be the schematic diagram of another embodiment of the present invention (copper contact of substrate is planted the ball processing procedure).
The present invention also can overlap the projection and the scolder lining that are used in substrate (substrate) and make (bumping), and its processing procedure is as follows:
A, on substrate 8, form copper wire 82, shown in Fig. 3 a.
B, post on this substrate 8, shown in 3b with synthetic adhesive tape 83.
C, above synthetic adhesive tape 83 appropriate location (with respect to copper wire 82 positions), impose laser perforation shown in Fig. 3 c.
D, after laser perforation, get blind hole 831 at synthetic adhesive tape 83, as shown in figure 36.
E, utilize brush board 84 that tin cream 85 brush is inserted in the blind hole 831, shown in Fig. 3 e.
F, make tin cream 85 melt into tin slab 86 through the high temperature reflow, shown in Fig. 3 f.
G, should synthesize adhesive tape 83 again and directly tore off, only stay the tin slab 86 of projection on the substrate 8, shown in Fig. 3 g.
H, after second time high temperature reflow is handled, this tin slab 86 promptly forms spherical tin ball 87 or scolder lining on copper billet 83.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; any those of ordinary skill in the art; without departing from the spirit and scope of the present invention; can do various conversion and modification, so protection scope of the present invention should define simultaneously with reference to the content in claims.
Claims (5)
1, a kind of manufacture method of printed convex block on semiconductor carrier, be to be attached to carrier surface with synthetic adhesive tape, form pothole with the laser perforation means, continue and tin cream is inserted hole location with brush board, after high temperature reflow processing makes tin cream dissolve into the weldering ingot, tear this synthetic adhesive tape again off, form the tin ball after the high temperature reflow second time is handled, its processing procedure is:
A, on the surface of carrier, form and desire the metal object that coated;
B, post synthetic adhesive tape at carrier surface:
C, above synthetic adhesive tape the appropriate location, impose the laser perforation;
D, after laser perforation, get blind hole at synthetic adhesive tape;
E, utilize brush board that tin cream brush is inserted in the blind hole;
F, make tin cream melt into tin slab through the high temperature reflow;
G, should synthesize adhesive tape again and directly tore off, only stay the tin slab of projection on the carrier;
H, after second time high temperature reflow is handled, this tin slab promptly forms spherical tin ball on metal level below the projection.
2, the manufacture method of a kind of printed convex block on semiconductor carrier as claimed in claim 1 is characterized in that: described semiconductor carrier is a semiconductor crystal wafer.
3, the manufacture method of a kind of printed convex block on semiconductor carrier as claimed in claim 1 is characterized in that: described semiconductor carrier is a semiconductor substrate.
4, the manufacture method of a kind of printed convex block on semiconductor carrier as claimed in claim 1 is characterized in that: the described metal object of desiring to be coated can be metal level below the projection that forms on the aluminium on the surface of carrier.
5, the manufacture method of a kind of printed convex block on semiconductor carrier as claimed in claim 1 is characterized in that: the described metal object of desiring to be coated also can be and is copper wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00122885A CN1340852A (en) | 2000-08-31 | 2000-08-31 | Technology for making printed convex block on semiconductor carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00122885A CN1340852A (en) | 2000-08-31 | 2000-08-31 | Technology for making printed convex block on semiconductor carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1340852A true CN1340852A (en) | 2002-03-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00122885A Pending CN1340852A (en) | 2000-08-31 | 2000-08-31 | Technology for making printed convex block on semiconductor carrier |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388449C (en) * | 2002-06-03 | 2008-05-14 | 株式会社电装 | Substrate having a plurality of bumps, method of forming the same, and method of bonding substrate to another |
| CN100461003C (en) * | 2006-01-04 | 2009-02-11 | 台湾积体电路制造股份有限公司 | Hemi-spherical structure and method for fabricating the same |
| CN1734755B (en) * | 2004-03-11 | 2012-12-19 | 国际整流器公司 | Solderable top metalization and passivation for source mounted package |
| CN109065459A (en) * | 2018-07-27 | 2018-12-21 | 大连德豪光电科技有限公司 | The production method of pad |
-
2000
- 2000-08-31 CN CN00122885A patent/CN1340852A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388449C (en) * | 2002-06-03 | 2008-05-14 | 株式会社电装 | Substrate having a plurality of bumps, method of forming the same, and method of bonding substrate to another |
| CN1734755B (en) * | 2004-03-11 | 2012-12-19 | 国际整流器公司 | Solderable top metalization and passivation for source mounted package |
| CN100461003C (en) * | 2006-01-04 | 2009-02-11 | 台湾积体电路制造股份有限公司 | Hemi-spherical structure and method for fabricating the same |
| CN109065459A (en) * | 2018-07-27 | 2018-12-21 | 大连德豪光电科技有限公司 | The production method of pad |
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