CN1313867C - Equipment for assembling insulation film used for making LCD of film transistor - Google Patents
Equipment for assembling insulation film used for making LCD of film transistor Download PDFInfo
- Publication number
- CN1313867C CN1313867C CNB02142425XA CN02142425A CN1313867C CN 1313867 C CN1313867 C CN 1313867C CN B02142425X A CNB02142425X A CN B02142425XA CN 02142425 A CN02142425 A CN 02142425A CN 1313867 C CN1313867 C CN 1313867C
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- chemical vapor
- lcd
- vapor deposition
- substrate
- film transistor
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Abstract
The present invention relates to a device for assembling insulation films used for making an LCD of a film transistor, which is formed by combining a chemical vapor deposition device, a cleaning chamber, a wafer vessel station and a transfer system, wherein the transfer system is used for transferring a base board to the chemical vapor deposition device, the cleaning chamber and the wafer vessel station; the chemical vapor deposition device is arranged to be opposite to the wafer vessel station, the transfer system is positioned between the wafer vessel station and the chemical vapor deposition device, and the cleaning chamber is adjacent to the transfer system. After the base board enters the chemical vapor deposition device from the wafer vessel station by the transfer system, first deposition is carried out for depositing insulation films with half of prearranged thickness; then, the base board enters the cleaning chamber by the transfer system to clear particles in the insulation films by wet cleaning; finally, the base board enters the chemical vapor deposition device by the transfer system to carry out second deposition so as to supplement the insulation films to form the prearranged thickness.
Description
Technical field
The present invention is the device of relevant a kind of manufacture of semiconductor, and particularly relevant for a kind of manufacturing thin film transistor (TFT) (thin film transistor, abbreviation TFT) unit equipment of the insulation film (insulating film) of LCD (liquid crystaldisplay is called for short LCD).
Background technology
In recent years thin film transistor (TFT) oneself be applied in the multiple semiconductor element LCD especially.LCD under the quick growth of dynamic formula information equipment, becomes one of present important display so it is expert at owing to have characteristics such as low voltage operating, radiationless line scattering, in light weight and volume are little.
Therefore, the improvement of the processing procedure of Thin Film Transistor-LCD has become one of emphasis of present all circles development, wherein the formation method of the insulation film of Thin Film Transistor-LCD is to utilize plasma enhanced chemical vapor deposition method (plasma enhanced chemical vapordeposition is called for short PECVD) insulation film of deposition one predetermined thickness on substrate.Yet the insulation film after the formation often has the residual problem of particulate (particle), and then causes different layer short circuits or element failure (fail), causes yield to reduce.Even if substrate after deposition again through a cleaning step, still have the situation of microparticle residue in insulation film, and for more thorough removing particulate, may cause and produce pin hole (pinhole) on the insulation film, or for by Automatic Guided Vehicle (auto guide vehicle, be called for short AGV) or a dead lift car (manual guidevehicle is called for short MGV) moving substrate between each device, and make it by environmental pollution.
Summary of the invention
Therefore, purpose of the present invention is providing a kind of unit equipment of making the insulation film of Thin Film Transistor-LCD, to reduce the residual particulates in the insulation film.
A further object of the present invention is providing a kind of unit equipment of making the insulation film of Thin Film Transistor-LCD, to prevent the situation of different layer short circuits or element failure.
Another object of the present invention is providing a kind of unit equipment of making the insulation film of Thin Film Transistor-LCD, to promote the yield of processing procedure.
Another purpose of the present invention is providing a kind of unit equipment of making the insulation film of Thin Film Transistor-LCD, can shorten the substrate delivery time before and after cleaning.
Another purpose of the present invention is providing a kind of unit equipment of making the insulation film of Thin Film Transistor-LCD, to reduce substrate by the chance of environmental pollution.
According to above-mentioned and other purpose, the present invention proposes the unit equipment of the insulation film of a kind of manufacturing Thin Film Transistor-LCD (TFT-LCD), be suitable for deposition one insulation film on the substrate, it is characterized in that, comprising: a brilliant boat station (cassette station); One chemical vapor deposition unit is with respect to this crystalline substance boat station; One transfer system (transfer system) is between this crystalline substance boat station and this chemical vapor deposition unit, in order to shift this substrate; And a purge chamber (cleaner), contiguous this transfer system.
Wherein this chemical vapor deposition unit comprises the cavity of carrying out the plasma enhanced chemical vapor deposition method.
Wherein comprise a cleaning device in this purge chamber.
Wherein this cleaning device comprises scrubbing unit.
Wherein this transfer system comprises a mechanical arm.
Wherein should have a plurality of brilliant boats in the crystalline substance boat station, in order to carry this substrate.
A kind of method of making the insulation film of Thin Film Transistor-LCD of the present invention is suitable for utilizing a unit equipment to deposit an insulation course of one first thickness, and this unit equipment comprises a brilliant boat station; Chemical vapor deposition unit with respect to this crystalline substance boat station; Transfer system between this crystalline substance boat station and this chemical vapor deposition unit; And a purge chamber of contiguous this transfer system, it is characterized in that its step comprises:
One substrate is provided, and this substrate system places this crystalline substance boat station;
Utilize this transfer system that this substrate is moved in this chemical vapor deposition unit from this crystalline substance boat station;
Carry out one first deposition manufacture process, with this insulation course of deposition one second thickness on this substrate, wherein this second thickness is less than this first thickness;
Utilize this transfer system that this substrate is moved into this purge chamber from this chemical vapor deposition unit;
Carry out a manufacturing process for cleaning, to remove the residual particulates on this substrate;
Utilize this transfer system that this substrate is moved in this chemical vapor deposition unit from this purge chamber; And
Carry out one second deposition manufacture process, with this insulation course of deposition one the 3rd thickness on this substrate, wherein the 3rd thickness adds that the thickness that carries out this insulation course behind this manufacturing process for cleaning equals this first thickness.
The step of wherein carrying out this first deposition manufacture process comprises the plasma enhanced chemical vapor deposition method.
The step of wherein carrying out this second deposition manufacture process comprises the plasma enhanced chemical vapor deposition method.
Wherein this second thickness be this first thickness half.
The step of wherein carrying out this manufacturing process for cleaning comprises carries out a wet-cleaned.
Wherein this wet-cleaned comprises the water column flushing.
Wherein this wet-cleaned comprises and scrubbing.
Of the present invention another made the method for the insulation film of Thin Film Transistor-LCD, is suitable for utilizing a unit equipment to deposit an insulation course of a fixed thickness, and this unit equipment comprises a brilliant boat station; Chemical vapor deposition unit with respect to this crystalline substance boat station; Transfer system between this crystalline substance boat station and this chemical vapor deposition unit; And a purge chamber of contiguous this transfer system, it is characterized in that its step comprises:
A., one substrate is provided, and this substrate system places this crystalline substance boat station;
B. utilize this transfer system that this substrate is moved in this chemical vapor deposition unit;
C. carry out a deposition manufacture process, with this insulation course of deposition on this substrate, wherein the thickness of this insulation course is less than this fixed thickness;
D. utilize this transfer system that this substrate is moved into this purge chamber from this chemical vapor deposition unit;
E. carry out a manufacturing process for cleaning, to remove the residual particulates on this substrate; And
F. repeating step b is to e, equals this fixed thickness up to the gross thickness of this insulation course.
The step of wherein carrying out this deposition manufacture process comprises the plasma enhanced chemical vapor deposition method.
The step of wherein carrying out this manufacturing process for cleaning comprises carries out a wet-cleaned.
Wherein this wet-cleaned comprises the water column flushing.
Wherein this wet-cleaned comprises and scrubbing.
In addition, unit equipment of the present invention is because integrated chemical vapor phase growing apparatus and purge chamber, that is uses same brilliant boat station interface, thus can shorten the substrate delivery time of cleaning front and back, and reduce known substrate by the chance of environmental pollution.
Description of drawings
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Fig. 1 is the unit equipment synoptic diagram according to the insulation film of the manufacturing Thin Film Transistor-LCD of a preferred embodiment of the present invention.
Embodiment
The present invention is a kind of manufacturing thin film transistor (TFT) (thin film transistor, be called for short TFT) LCD (liquid crystal display, the unit equipment of insulation film (insulating film) abbreviation LCD), mainly be that integrated chemical vapour deposition (chemical vapor deposition is called for short CVD) device and purge chamber (cleaner) cavity are in same unit equipment.
Please refer to Fig. 1, the unit equipment 100 of making the insulation film of Thin Film Transistor-LCD is by a chemical vapor deposition unit 106, one purge chamber 108, one brilliant boat station (cassette station) 102 and in order to transmit a transfer system (transfer system) 110 be combined intos of substrate 112 to above-mentioned each parts, comprise mainly in the chemical vapor deposition unit 106 that wherein a chemical vapor deposition chamber body (CVD chamber) for example is to carry out plasma enhanced chemical vapor deposition method (plasma enhanced CVD, abbreviation PECVD) cavity, temperature-controlling system, gas piping system, control pressurer system, radio frequency (radio frequency is called for short RF) generator etc.; And comprise in the purge chamber 108 that a cleaning device (cleaningequipment) is scrubbing unit (scrubber) for example; Transfer system 110 is to comprise a mechanical arm (robot) 114 for example, in order to transmit substrate 112; And have several brilliant boats 104 in the brilliant boat station 102.And each configuration of components of the present invention be chemical vapor deposition unit 106 with respect to brilliant boat station 104, transfer system 110 is between brilliant boat station 104 and chemical vapor deposition unit 106, and the contiguous transfer systems 110 in purge chamber 108.
When the above-mentioned unit equipment of the present invention is applied on the deposition manufacture process of insulation film, in the chemical vapor deposition unit 106 that to be the substrate (not illustrating) that will place brilliant boat 104 earlier move into respect to brilliant boat station 102 from brilliant boat station 102, what wherein be used for transfer base substrate 112 is a transfer system 110 that is positioned at 106 of brilliant boat station 102 and chemical vapor deposition units.
Subsequently, utilize chemical vapor deposition unit 106 to carry out the deposition first time, insulation film with about half predetermined thickness of deposition on substrate, or be thicker or thinner, wherein chemical vapor deposition unit 106 performed deposition manufacture process for example are plasma enhanced chemical vapor deposition method (plasma enhanced CVD are called for short PECVD).
Then, utilize transfer system 110 that substrate is shifted out by chemical vapor deposition unit 106, send into again in the purge chamber 108 of contiguous transfer system 110 and carry out wet-cleaned (wetcleaning), to remove in the insulation film or position residual particulates (particle) thereon, wherein wet-cleaned for example is that physics cleans, and washes or scrubs as water column.Owing to can on insulation course, produce pin hole (pinhole) after particulate is removed, therefore, substrate after will being cleaned by transfer system 110 more afterwards delivers into chemical vapor deposition unit 106, to carry out the deposition second time, deposit the pin hole that is produced for the first time to fill up, and supply the insulation film of predetermined thickness.Because same position may be dropped on hardly in the particulate position of twice deposition insulation film, thus even there is particulate to exist, also can remedy the insulation film intensity of this position by the insulation film of another time deposition, thereby promote yield.At last, the substrate of finishing deposition manufacture process can be transferred to brilliant boat station 102 by transfer system 110, to carry out successive process.
In sum, feature of the present invention comprises:
1. the present invention is divided into deposition twice with the insulation course that desire deposits, therefore the wet-cleaned of being implemented in deposition back for the first time since can with in the dielectric film of deposition for the first time or particulate thereon remove, can reduce residual particulates in the insulation film, prevent the different layer short circuits or the situation of element failure.
2. the present invention can filled up after the deposition for the second time at the pin hole that is produced on insulation course after the cleaning, because the particulate of twice deposition insulation film may drop on same position hardly, even so there is particulate to exist, also can remedy the insulation film intensity of this position by the insulation film of another time deposition, thereby promote yield.
3. unit equipment of the present invention is because integrated chemical vapor phase growing apparatus and purge chamber, that is uses same brilliant boat station interface, so can shorten the substrate delivery time of cleaning front and back.
4. unit equipment of the present invention is because use same brilliant boat station interface, so can reduce known by Automatic Guided Vehicle (auto guide vehicle, be called for short AGV) or a dead lift car (manual guidevehicle is called for short MGV) moving substrate between each device, and make it by the chance of environmental pollution.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; anyly be familiar with this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (18)
1. a unit equipment of making the insulation film of Thin Film Transistor-LCD is suitable for deposition one insulation film on the substrate, it is characterized in that, comprising:
One brilliant boat station;
One chemical vapor deposition unit is with respect to this crystalline substance boat station;
One transfer system is between this crystalline substance boat station and this chemical vapor deposition unit, in order to shift this substrate; And
One purge chamber, contiguous this transfer system.
2. the unit equipment of the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 1 is characterized in that, wherein this chemical vapor deposition unit comprises the cavity of carrying out the plasma enhanced chemical vapor deposition method.
3. the unit equipment of the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 1 is characterized in that, wherein comprises a cleaning device in this purge chamber.
4. the unit equipment of the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 3 is characterized in that, wherein this cleaning device comprises scrubbing unit.
5. the unit equipment of the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 1 is characterized in that, wherein this transfer system comprises a mechanical arm.
6. the unit equipment of the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 1 is characterized in that, wherein should have a plurality of brilliant boats in the crystalline substance boat station, in order to carry this substrate.
7. a method of making the insulation film of Thin Film Transistor-LCD is suitable for utilizing a unit equipment to deposit an insulation course of one first thickness, and this unit equipment comprises a brilliant boat station; Chemical vapor deposition unit with respect to this crystalline substance boat station; Transfer system between this crystalline substance boat station and this chemical vapor deposition unit; And a purge chamber of contiguous this transfer system, it is characterized in that its step comprises:
One substrate is provided, and this substrate system places this crystalline substance boat station;
Utilize this transfer system that this substrate is moved in this chemical vapor deposition unit from this crystalline substance boat station;
Carry out one first deposition manufacture process, with this insulation course of deposition one second thickness on this substrate, wherein this second thickness is less than this first thickness;
Utilize this transfer system that this substrate is moved into this purge chamber from this chemical vapor deposition unit;
Carry out a manufacturing process for cleaning, to remove the residual particulates on this substrate;
Utilize this transfer system that this substrate is moved in this chemical vapor deposition unit from this purge chamber; And
Carry out one second deposition manufacture process, with this insulation course of deposition one the 3rd thickness on this substrate, wherein the 3rd thickness adds that the thickness that carries out this insulation course behind this manufacturing process for cleaning equals this first thickness.
8. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 7 is characterized in that, the step of wherein carrying out this first deposition manufacture process comprises the plasma enhanced chemical vapor deposition method.
9. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 7 is characterized in that, the step of wherein carrying out this second deposition manufacture process comprises the plasma enhanced chemical vapor deposition method.
10. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 7 is characterized in that, wherein this second thickness be this first thickness half.
11. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 7 is characterized in that, the step of wherein carrying out this manufacturing process for cleaning comprises carries out a wet-cleaned.
12. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 11 is characterized in that, wherein this wet-cleaned comprises the water column flushing.
13. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 11 is characterized in that, wherein this wet-cleaned comprises and scrubbing.
14. a method of making the insulation film of Thin Film Transistor-LCD is suitable for utilizing a unit equipment to deposit an insulation course of a fixed thickness, this unit equipment comprises a brilliant boat station; Chemical vapor deposition unit with respect to this crystalline substance boat station; Transfer system between this crystalline substance boat station and this chemical vapor deposition unit; And a purge chamber of contiguous this transfer system, it is characterized in that its step comprises:
A., one substrate is provided, and this substrate system places this crystalline substance boat station;
B. utilize this transfer system that this substrate is moved in this chemical vapor deposition unit;
C. carry out a deposition manufacture process, with this insulation course of deposition on this substrate, wherein the thickness of this insulation course is less than this fixed thickness;
D. utilize this transfer system that this substrate is moved into this purge chamber from this chemical vapor deposition unit;
E. carry out a manufacturing process for cleaning, to remove the residual particulates on this substrate; And
F. repeating step b is to e, equals this fixed thickness up to the gross thickness of this insulation course.
15. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 14 is characterized in that, the step of wherein carrying out this deposition manufacture process comprises the plasma enhanced chemical vapor deposition method.
16. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 14 is characterized in that, the step of wherein carrying out this manufacturing process for cleaning comprises carries out a wet-cleaned.
17. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 14 is characterized in that, wherein this wet-cleaned comprises the water column flushing.
18. the method for the insulation film of manufacturing Thin Film Transistor-LCD as claimed in claim 14 is characterized in that, wherein this wet-cleaned comprises and scrubbing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02142425XA CN1313867C (en) | 2002-09-17 | 2002-09-17 | Equipment for assembling insulation film used for making LCD of film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02142425XA CN1313867C (en) | 2002-09-17 | 2002-09-17 | Equipment for assembling insulation film used for making LCD of film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1484069A CN1484069A (en) | 2004-03-24 |
| CN1313867C true CN1313867C (en) | 2007-05-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB02142425XA Expired - Lifetime CN1313867C (en) | 2002-09-17 | 2002-09-17 | Equipment for assembling insulation film used for making LCD of film transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1313867C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103439839B (en) * | 2013-08-06 | 2015-12-02 | 京东方科技集团股份有限公司 | A kind of method and substrate forming rete |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1030674C (en) * | 1989-10-13 | 1996-01-10 | 克里研究公司 | Method of preparing silicon carbide for crystal growth |
| US6245396B1 (en) * | 1998-02-26 | 2001-06-12 | Anelva Corporation | CVD apparatus and method of using same |
| JP2001338880A (en) * | 2000-05-26 | 2001-12-07 | Internatl Business Mach Corp <Ibm> | Method and device for manufacturing active matrix device including top-gate-type tft |
| JP2002093718A (en) * | 2000-09-13 | 2002-03-29 | Kanegafuchi Chem Ind Co Ltd | Plasma cvd system |
| JP2002173775A (en) * | 2000-09-05 | 2002-06-21 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus, and manufacturing method of semiconductor apparatus |
| JP2002198364A (en) * | 2000-12-25 | 2002-07-12 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
-
2002
- 2002-09-17 CN CNB02142425XA patent/CN1313867C/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1030674C (en) * | 1989-10-13 | 1996-01-10 | 克里研究公司 | Method of preparing silicon carbide for crystal growth |
| US6245396B1 (en) * | 1998-02-26 | 2001-06-12 | Anelva Corporation | CVD apparatus and method of using same |
| JP2001338880A (en) * | 2000-05-26 | 2001-12-07 | Internatl Business Mach Corp <Ibm> | Method and device for manufacturing active matrix device including top-gate-type tft |
| JP2002173775A (en) * | 2000-09-05 | 2002-06-21 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus, and manufacturing method of semiconductor apparatus |
| JP2002093718A (en) * | 2000-09-13 | 2002-03-29 | Kanegafuchi Chem Ind Co Ltd | Plasma cvd system |
| JP2002198364A (en) * | 2000-12-25 | 2002-07-12 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
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| Publication number | Publication date |
|---|---|
| CN1484069A (en) | 2004-03-24 |
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Granted publication date: 20070502 |