CN1234017C - Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field - Google Patents
Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field Download PDFInfo
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- CN1234017C CN1234017C CN 01134693 CN01134693A CN1234017C CN 1234017 C CN1234017 C CN 1234017C CN 01134693 CN01134693 CN 01134693 CN 01134693 A CN01134693 A CN 01134693A CN 1234017 C CN1234017 C CN 1234017C
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Abstract
The present invention provides a three-dimensional weak magnetic field detecting element using magnetic tunnel junction magnetoelectric materials. The present invention is characterized in that the magnetic field detecting element is composed of three groups of identical magnetoelectric chips (15) of a magnetic tunnel junction, wherein the identical magnetoelectric chips (15) are three-dimensionally and crosswise placed, and the magnetic field sensitive directions of each chip are perpendicular; each magnetoelectric chip (15) of a magnetic tunnel junction is composed of a base chip (1), a conductive film strip part (12) which is generated on the base chip (1) and generates a bias magnetic field, a conductive film strip part (13) generating a reset function, and a magnetoelectric induction part (14) of a magnetic tunnel junction, wherein the magnetoelectric induction part (14) of a magnetic tunnel junction is composed of a magnetic tunnel junction, an electrical signal output electrode and an electrode lead. The present invention has the advantages that the magnetic field detecting element has high sensitivity on the magnitudes and the directions of the magnetic fields, and at the same time, the magnetic field detecting element has the functions of reset and demagnetization prevention.
Description
Technical field
The invention provides a kind of 3 D weak magnetic field detection means of using the magnetic tunnel-junction magnetic resistance material.The magnetic tunnel-junction magnetic resistance material is made up of the separated two-layer ferromagnetic layer of insulator layer as thin as a wafer, nanometer scale thickness, or add one deck antiferromagnetic layer on one deck ferromagnetic layer therein and form as pinning layer, the magnetic tunnel-junction material also is called spin-dependent tunneling knot material.
Background technology
It is one of importance in the magnetic measurement that Weak magentic-field (referring to that in the present invention magnetic field is less than 100 little teslas) detects, in national economy, have a wide range of applications, as magnetic recording reading head in the information industry, the measurement of magnetic azimuth in the navigation, the measurement in orientation, magnetic field on the aircraft, the earth magnetism size in the petroleum prospecting and the measurement in orientation, leakage field in the commercial production, the measurement of remanent magnetism, metallurgical, the Non-Destructive Testing of product quality in the aircraft industry, application in the weak magnetic anti-counterfeiting technology etc., the main anisotropic magnetoresistance material that adopts in the existing technology, as NiFe, metallic film materials such as NiCo, since 1988, along with going deep into of research work, various novel magnetic resistance materials continue to bring out, resemble the metallized multilayer film giant magnetic resistor material, the spin valve magnetic resistance material, the granular membrane huge magnetic resistance material, magnetic tunnel-junction magnetic resistance material etc. all has characteristics separately.
Compare with other material, the principal feature of magnetic tunnel-junction magnetic resistance material has:
1. be suitable for work under the downfield.The only several oersteds of saturation magnetic field (Oe) are to tens oersteds (Oe).
2. magnetic field sensitivity height.Because the magneto-resistor of magnetic tunnel-junction changes near precipitous stepped form under the outside magnetic field effect, its magnetic field sensitivity is up to 2%-8%/Oe, even higher, and is higher one more than the magnitude than the anisotropic magnetoresistance material that generally uses now.
3. thermal stability improves.Can reach more than 125 ℃ through heat treated magnetic tunnel-junction magneto-resistance device working temperature.
4. magnetic noise is little.The consistance that magnetic tunnel-junction magneto-resistance device magnetic moment rotates be different from the anisotropic magnetoresistance material that generally uses now, thereby its Barkhausen's magnetic noise reduces significantly.
5. the response time is fast.Response time is at magnitude of subnanosecond.
These characteristics are that the magnetic tunnel-junction magnetic resistance material provides the foundation in the application of weak magnetic context of detection.
Use the principle of work of the 3 D weak magnetic field detection means of magnetic tunnel-junction magnetic resistance material to see Fig. 1.
Apply an external magnetic field H on the former coupling direction being different from the coupling direction reverse direction of two ferromagnetic layers magnetic moment up and down or other, tunnel junction magnetoresistive ratio TMR (%)=[R (H)-R (O)]/R (O) sees Fig. 1 with the curve that the increase of external magnetic field H changes, R (H) is the resistance of magnetic tunnel-junction when applying external magnetic field, and R (O) is the resistance of magnetic tunnel-junction when not having external magnetic field.Outside magnetic field hour, external magnetic field can not change the direction of the magnetic moment in the two ferromagnetic layers, TMR=0 is when external magnetic field further is increased to H
0The time, the less ferromagnetic layer (as the lower floor among Fig. 1) of coercive force takes the lead in beginning to change magnetic moment direction and makes the tunnel junction magneto-resistor that a variation near step be arranged, and outside magnetic field reaches H
sThe time, the magnetic moment of the ferromagnetic layer that coercive force is less turns to outer magnetic field direction fully, and magneto-resistor reaches capacity.3 D weak magnetic field detection means of the present invention utilizes external magnetic field at H exactly
0To H
sThe detection to Weak magentic-field is finished in the sensitivity of formed highfield during this section tunnel junction magneto-resistor drastic change process; The working point just is chosen in the mid point that the tunnel junction magneto-resistor changes, and at this moment just need apply a bias magnetic field, and its size is H
Bias, in the present invention, bias magnetic field H
BiasBe to control by the size of current in the conductive film bar.The advantage that bias magnetic field is set like this is: 1) working point is selected in the sensitiveest interval, 2) the big I of bias magnetic field is regulated easily by the size of current of conductive film bar, 3) sensitive direction of device is by the direction decision of bias magnetic field, and, improved the susceptibility of magnetic direction widely only to the magnetic-field component sensitivity of this direction.The conductive film bar that is used for reset function is in order to make magnetic moment be aligned to former coupling direction, can to prevent demagnetization effects simultaneously, guaranteeing the long-term operate as normal of device.
Summary of the invention
Three groups of identical magnetic tunnel-junction magneto-resistor chips 15 that 3 D weak magnetic field detection means of the present invention (Figure 12) is placed by three dimensional intersection are formed, and the magnetic-field-sensitive direction of each chip is vertical mutually.Its magnetic tunnel-junction magneto-resistor chip 15 is by substrate 1 and the conductive film bar part 12 of the generation bias magnetic field that generates thereon and the conductive film bar part 13 and the magnetic tunnel-junction magneto-resistor sensing part 14 that produce reset function constitute.
Above-mentioned substrate 1 can be a macromolecular material, can be amorphous materials such as glass, silicon dioxide also, also can be oxide material, also can be nitride material, also can be semiconductor material.These materials are plastics, poly-four compound macromolecular materials, or glass, silicon dioxide amorphous material, or magnesium oxide, aluminium oxide, zinc paste, barium titanate, lead titanates, lead zirconates, lead zirconate titanate, metatitanic acid zirconic acid lanthanum lead plumbate metal oxide materials, or silicon, gallium arsenide semiconductor material.
The conductive membrane layer 2 that is deposited in the conductive film bar is Al, Cu, Au, Ag, Pt, Ta, AlCu metal simple-substance or alloy-layer, or iridium dioxide, ruthenic oxide metal-oxide film layer; Insulator layer 3 is alundum (Al, silicon dioxide, magnesium oxide, tantalum pentoxide, titania, vanadium pentoxide, zinc paste, barium titanate, lead titanates, lead zirconates, lead zirconate titanate, metatitanic acid zirconic acid lanthanum lead plumbate oxide skin(coating), or tantalum nitride, aluminium nitride, silicon nitride, titanium nitride nitride layer, or silit carbonization thing; Conductive membrane layer 2 and insulator layer 3 thickness are respectively 10 nanometers to 5000 nanometers in the duplicature of its conductive film bar.
The conductive film bar part 13 that produces the conductive film bar part 12 of bias magnetic field in the above-mentioned magnetic tunnel-junction magneto-resistor chip 15 and produce reset function is made up of the duplicature that generates by conductive membrane layer 2 and insulator layer (3) order on above-mentioned substrate 1, has the electrical current carriers part of intersection bar shaped.Wherein a conductive film bar is used to produce bias magnetic field, another conductive film bar is used to produce reset function, and making up and down the coupling direction between ferromagnetic layer of the rectangular direction of the conductive film bar part 13 that produces reset function perpendicular to the magneto-resistor sensing part, the rectangular direction of the conductive film bar part 12 of generation bias magnetic field is perpendicular to the magnetic-field-sensitive direction.
Above-mentioned conductive membrane layer 2 can be metal simple-substance or alloy-layer, also can be metal oxide layer, and thickness is between 10 to 5000 nanometers; Insulator layer 3 can be an oxide skin(coating), also can be nitride layer, also can be carbide lamella, also can be other insulator layer, and thickness is between 10 to 5000 nanometers.
Magnetic tunnel-junction magneto-resistor sensing part 14 is the trilamellar membranes that constitute by the order of ferromagnetic layer 4, insulator layer 5 and ferromagnetic layer 6 that generate on above-mentioned conductive film bar in the above-mentioned magnetic tunnel-junction magneto-resistor chip 15, perhaps press four tunics of the order formation of ferromagnetic layer 4, insulator layer 5, ferromagnetic layer 6 and antiferromagnetic layer 9, perhaps four tunics that constitute by the order of antiferromagnetic layer 9, ferromagnetic layer 4, insulator layer 5 and ferromagnetic layer 6 are formed, effigurate sensing part.The ferromagnetic layer 4,6 on insulator layer 5 both sides and antiferromagnetic layer 9 are simultaneously as drawing the output electrode that changes the change in electric that causes owing to magneto-resistor.The size of its magnetic tunnel-junction magneto-resistor sensing part 14 is less than the width of above-mentioned bar shaped conductive film, and the magnetic tunnel-junction of sensing part placed intersects the center of bar shaped.
Above-mentioned ferromagnetic layer 4,6 can be the fe magnetic metallic layers, also can be the metal alloy ferromagnetic layer, also can be the fe layer that contains oxygen atom, also can be ferrimagnetic layer such as ferrite, and thickness is between 10 to 5000 nanometers.Above-mentioned insulator layer 5 can be an oxide skin(coating), also can be nitride layer, also can be sulfurized layer, also can be arsenide layer, and thickness is between 0.5 to 10 nanometer.Above-mentioned antiferromagnetic layer 9 can be the metal alloy antiferromagnetic layer, also can be the oxide antiferromagnetic layer, and thickness is between 10 to 5000 nanometers.
The ferromagnetic layer the 4, the 6th that magnetic tunnel-junction magneto-resistor sensing part 14 is deposited, Ni, Co, Fe elemental metals layer, or NiFe, NiCo, CoFe, NiCu, AuCo are the metal alloy layer of base with Ni, Co, Fe, or contain the iron layer of 5%～40% oxygen atom, or GaMnAs ferromagnetic semiconductor layer, or ferrite ferrimagnetic layer; Insulator layer 5 is alundum (Al, tantalum pentoxide, vanadium pentoxide, magnesium oxide, silicon dioxide, titania oxide skin(coating), or tantalum nitride, aluminium nitride, silicon nitride, titanium nitride nitride layer, or zinc sulphide sulfurized layer, or aluminium arsenide arsenide layer; Antiferromagnetic layer 9 is FeMn, IrMn metal alloy layer, or nickel oxide, cobalt oxide oxide skin(coating).
Three groups of above-mentioned magnetic tunnel-junction magneto-resistor chips (15) that are used for the detection of single direction magnetic-field component are made the vertical mutually in twos placement of its sensitive direction, thereby make 3 D weak magnetic field detection means (Figure 12).
The invention has the advantages that: be suitable for below 100 little teslas, up to the detection of the Weak magentic-field of 0.1 little tesla magnitude; Dimensional orientation and magnetic field size detection to magnetic field are highly sensitive; Has the function that magnetic moment resets and prevents to demagnetize simultaneously.
Description of drawings
Fig. 1 is the synoptic diagram that the magnetic tunnel-junction magnetoresistance characteristics changes with externally-applied magnetic field.Arrow in the square frame that marks among the figure is represented the direction of magnetic moment in each ferromagnetic layer.
Fig. 2 is the profile scanning electron microscope image of the trilamellar membrane that constitutes of the order of the ferromagnetic layer of the present invention ferromagnetic layer by the iron that contains 20% oxygen atom, the alundum (Al insulator layer making magnetic tunnel-junction magneto-resistor sensing part and use and the iron that contains 20% oxygen atom.
Fig. 3 is that the tunnel junction magnetoresistive ratio of the trilamellar membrane that constitutes of the order of the ferromagnetic layer of the present invention ferromagnetic layer by the iron that contains 20% oxygen atom, the alundum (Al insulator layer making magnetic tunnel-junction magneto-resistor sensing part and use and the iron that contains 20% oxygen atom increases the empirical curve that changes with external magnetic field, and external magnetic field is perpendicular to the coupling direction between ferromagnetic layer.The size of this magnetic tunnel-junction trilamellar membrane is 10mm * 10mm.
Fig. 4 is the layer structure synoptic diagram of the trilamellar membrane that constitutes of the conductive film bar duplicature that constitutes in proper order by conductive membrane layer and insulator layer of the generation bias magnetic field made of the present invention and reset function and the order by ferromagnetic layer, insulator layer, ferromagnetic layer that magnetic tunnel-junction magneto-resistor sensing part is used.Substrate 1, conductive membrane layer 2, insulator layer 3, ferromagnetic layer 4, insulator layer 5, ferromagnetic layer 6.
Fig. 5 is the layer structure synoptic diagram of four tunics that constitute of the conductive film bar duplicature that constitutes in proper order by conductive membrane layer and insulator layer of the generation bias magnetic field made of the present invention and reset function and the order by antiferromagnetic layer, ferromagnetic layer, insulator layer and ferromagnetic layer that magnetic tunnel-junction magneto-resistor sensing part is used.Substrate 1, conductive membrane layer 2, insulator layer 3, ferromagnetic layer 4, insulator layer 5, ferromagnetic layer 6, antiferromagnetic layer 9.
Fig. 6 is the layer structure synoptic diagram of four tunics that constitute of the conductive film bar duplicature that constitutes in proper order by conductive membrane layer and insulator layer of the generation bias magnetic field made of the present invention and reset function and the order by ferromagnetic layer, insulator layer, ferromagnetic layer and antiferromagnetic layer that magnetic tunnel-junction magneto-resistor sensing part is used.Substrate 1, conductive membrane layer 2, insulator layer 3, ferromagnetic layer 4, insulator layer 5, ferromagnetic layer 6, antiferromagnetic layer 9.
Fig. 7 is the photoresist section stratiform structural representation of the sensing part shape that forms on the magnetic tunnel-junction magnetoresistive multilayered film of the present invention.Substrate 1, conductive membrane layer 2, insulator layer 3, ferromagnetic layer 4, insulator layer 5, ferromagnetic layer 6, photoresist 10.
Fig. 8 is the present invention forms the conductive film strip on the duplicature of the conductive film bar that produces bias magnetic field and reset function a photoresist section stratiform structural representation.Substrate 1, conductive membrane layer 2, insulator layer 3, ferromagnetic layer 4, insulator layer 5, ferromagnetic layer 6, the bottom electrode 7 of sensing part, photoresist 10.
Fig. 9 is the section stratiform structural representation that the present invention passes through semiconductor moulding process magnetic tunnel-junction magneto-resistor sensing part that forms and the conductive film bar that produces bias magnetic field and reset function.Substrate 1, conductive membrane layer 2, insulator layer 3, ferromagnetic layer 4, insulator layer 5, ferromagnetic layer 6, the bottom electrode 7 of sensing part, the top electrode 8 of sensing part, the conductive film bar part 12 of generation bias magnetic field, produce the conductive film bar part 13 of reset function, magnetic tunnel-junction magneto-resistor sensing part 14.
Figure 10 is the three-dimensional structure synoptic diagram of magnetic tunnel-junction magneto-resistor chip 15 of the present invention.Substrate 1, conductive membrane layer 2, insulator layer 3, ferromagnetic layer 4, insulator layer 5, ferromagnetic layer 6, the bottom electrode 7 of sensing part, the top electrode 8 of sensing part, antiferromagnetic layer 9, the bottom electrode lead-in wire 11 of sensing part, the conductive film bar part 12 of generation bias magnetic field, produce the conductive film bar part 13 of reset function, magnetic tunnel-junction magneto-resistor sensing part 14.
Figure 11 is the planar structure synoptic diagram of magnetic tunnel-junction magneto-resistor chip 15 of the present invention.Substrate 1, the bottom electrode 7 of sensing part, the top electrode 8 of sensing part, the bottom electrode lead-in wire 11 of sensing part, the conductive film bar part 12 of generation bias magnetic field, the conductive film bar part 13 of generation reset function, magnetic tunnel-junction magneto-resistor sensing part 14.
Figure 12 is the structural representation of 3 D weak magnetic field detection means of the present invention, this device by three groups orthogonal, the magnetic tunnel-junction magneto-resistor chip of single direction magnetic-field-sensitive is formed.
Embodiment:
Example 1: on quartz glass substrate, make form by magnetic tunnel-junction magneto-resistor sensing part trilamellar membrane and conductive film bar duplicature, to the magnetic tunnel-junction magneto-resistor chip of single direction magnetic-field-sensitive.
After the substrate of above-mentioned long 10mm, wide 10mm, thick 0.5mm usefulness acetone ultrasonic cleaning, use the deionized water ultrasonic cleaning, use the absolute ethyl alcohol ultrasonic cleaning at last.Substrate after the cleaning dries up with high pure nitrogen.The substrate that cleaned is put in the coating chamber of magnetron sputtering film device, coating chamber is extracted into 2 * 10
-4Pascal's vacuum tightness.On substrate, deposit the copper film of 500 nanometer thickness with magnetically controlled sputter method, working gas is 0.8 Pascal's a argon gas, deposit the silicon dioxide film of 200 nanometer thickness subsequently thereon with radio frequency magnetron sputtering method, working gas is 0.8 Pascal's argon gas and an oxygen mixed gas, and wherein the ratio of argon gas and oxygen is 95 to 5, substrate temperature 600 degree, after having deposited silicon dioxide film, charge into an atmospheric pressure oxygen, the duplicature preparation of conductive film bar is finished in original position insulation one hour.Coating chamber is extracted into 2 * 10 once more
-4Pascal's vacuum tightness, on duplicature, deposit the iron thin film that contains 20% oxygen atom of 200 nanometer thickness with magnetically controlled sputter method, argon gas during deposition and oxygen mixed gas pressure are 0.8 Pascal, and wherein the ratio of argon gas and oxygen is 98 to 2, substrate temperature 200 degree; After having deposited the iron thin film that contains 20% oxygen atom, continue to deposit the alundum (Al insulator layer of 2 nanometer thickness thereon with radio-frequency (RF) sputtering method, argon gas during deposition and oxygen mixed gas pressure are 0.8 Pascal, and wherein the ratio of argon gas and oxygen is 98 to 2, substrate temperature 200 degree; Then, on the alundum (Al insulator layer, deposit the iron thin film that contains 20% oxygen atom of 300 nanometer thickness with magnetically controlled sputter method, argon gas during deposition and oxygen mixed gas pressure are 0.8 Pascal, and wherein the ratio of argon gas and oxygen is 98 to 2, and substrate temperature is a room temperature.The thickness of each layer film can be controlled with the adjustment sedimentation time, and the section layer structure of deposit film as shown in Figure 4.
The shape of the conductive film bar part of magnetic tunnel-junction magneto-resistor sensing part and generation bias magnetic field and reset function can divide for three steps finished by the semiconductor moulding process.The first step, form the top electrode of magnetic tunnel-junction magneto-resistor sensing part and the shape of insulator layer, photoresist is coated on the multilayer film of deposition, use has the photolithography plate of the square induction zone shape of 0.1mm * 0.1mm, photolithography plate covered as shadow shield scribbling on the multilayer film of photoresist, make the photoresist photosensitive hardening that is not covered with ultraviolet ray, then, use the chemical solution flush away not by the photoresist of UV-radiation-sensitive by shadow shield.Like this, just formed the foursquare photoresist overlay area of 0.1mm * 0.1mm at multi-layer film surface, referring to Fig. 7.This sample is carried out etching with ion etching equipment, and the control etching depth has just formed the top electrode of the foursquare magnetic tunnel-junction magneto-resistor of 0.1mm * 0.1mm sensing part and the shape of insulator layer to just having carved the magnetic tunnel-junction insulator layer.Second step, form the bottom electrode (0.08mm * 0.08mm square) and contact conductor (the long 1mm of magnetic tunnel-junction magneto-resistor sensing part, wide 0.01mm) shape, different with the first step is, except forming at multi-layer film surface the photoresist overlay area of bottom electrode and contact conductor shape, also need form the top electrode that is shaped in the first step and the photoresist overlay area of insulator layer shape, other process is identical.The 3rd step formed the shape of conductive film bar, and is the right-angled intersection of duplicature photoetching, etching growth 10mm, wide 1mm that produces bias magnetic field and reset function is rectangular promptly on the circular foundation that forms in the protection first step and second step, referring to Fig. 8, Fig. 9 and Figure 11.So just on quartz glass substrate, made form by magnetic tunnel-junction magneto-resistor trilamellar membrane and conductive film bar duplicature, to the magnetic tunnel-junction magneto-resistor chip of single direction magnetic-field-sensitive, its sensitive direction is vertically placed in twos three groups of such identical chips, just constituted the 3 D weak magnetic field detection means, its three-dimensional structure synoptic diagram is referring to Figure 10, just the inverse ferric magnetosphere (9) among Figure 10 does not exist, and other parts are identical.Vertically place in twos by three groups of such identity units, just constituted the 3 D weak magnetic field detection chip, referring to Figure 12.
The shape of the conductive film bar of the shape of magnetic tunnel-junction magneto-resistor sensing part and extraction electrode and generation bias magnetic field and reset function is not subjected to the restriction of present embodiment.
Example 2: on the thermal oxidation silicon substrate, make form by magnetic tunnel-junction magneto-resistor four tunics and conductive film bar duplicature, to the magnetic tunnel-junction magneto-resistor chip of single direction magnetic-field-sensitive.
After the thermal oxidation silicon substrate of above-mentioned long 10mm, wide 10mm, thick 0.5mm (silicon face silicon dioxide bed thickness 500 nanometers) usefulness acetone ultrasonic cleaning, use the deionized water ultrasonic cleaning, use the absolute ethyl alcohol ultrasonic cleaning at last.Substrate after the cleaning dries up with high pure nitrogen.The substrate that cleaned is put in the coating chamber of magnetron sputtering film device, coating chamber is extracted into 2 * 10
-4Pascal's vacuum tightness.On substrate, deposit the copper film of 500 nanometer thickness with magnetically controlled sputter method, working gas is 0.8 Pascal's a argon gas, deposit the di-aluminium trioxide film of 200 nanometer thickness subsequently thereon with radio frequency magnetron sputtering method, working gas is 0.8 Pascal's argon gas and a nitrogen mixture body, and wherein the ratio of argon gas and oxygen is 95 to 5, substrate temperature 400 degree, after having deposited di-aluminium trioxide film, charge into an atmospheric pressure oxygen, the duplicature preparation of conductive film bar is finished in original position insulation one hour.Coating chamber is extracted into 2 * 10 once more
-4Pascal's vacuum tightness uses magnetically controlled sputter method to deposit the FeMn inverse ferric magnetosphere film of 300 nanometers on duplicature, and the ar pressure during deposition is 0.8 Pascal, substrate temperature 300 degree; Deposit the iron thin film that contains 20% oxygen atom of 300 nanometer thickness subsequently, argon gas during deposition and oxygen mixed gas pressure are 0.8 Pascal, and wherein the ratio of argon gas and oxygen is 98 to 2, and substrate temperature is a room temperature; After having deposited the iron thin film that contains 20% oxygen atom, continue to deposit the alundum (Al insulator layer of 2 nanometer thickness thereon with radio-frequency (RF) sputtering method, argon gas during deposition and oxygen mixed gas pressure are 0.8 Pascal, and wherein the ratio of argon gas and oxygen is 98 to 2, substrate temperature 200 degree; Then, on the alundum (Al insulator layer, deposit the iron thin film that contains 20% oxygen atom of 300 nanometer thickness with magnetically controlled sputter method, argon gas during deposition and oxygen mixed gas pressure are 0.8 Pascal, and wherein the ratio of argon gas and oxygen is 98 to 2, substrate temperature 200 degree.The thickness of each layer film can be controlled with the adjustment sedimentation time, and the section layer structure of deposit film as shown in Figure 5.
The shape of the conductive film bar part of magnetic tunnel-junction magneto-resistor sensing part and generation bias magnetic field and reset function can divide for three steps finished by the semiconductor moulding process.The first step, form the top electrode of magnetic tunnel-junction magneto-resistor chip sensing part and the shape of insulator layer, photoresist is coated on the multilayer film of deposition, use has the photolithography plate of the square induction zone shape of 0.1mm * 0.1mm, photolithography plate covered as shadow shield scribbling on the multilayer film of photoresist, make the photoresist photosensitive hardening that is not covered with ultraviolet ray, then, use the chemical solution flush away not by the photoresist of UV-radiation-sensitive by shadow shield.Like this, just formed the foursquare photoresist overlay area of 0.1mm * 0.1mm at multi-layer film surface.After this sample carried out etching with ion etching equipment, the top electrode of the foursquare magnetic tunnel-junction magneto-resistor of 0.1mm * 0.1mm chip sensing part and the shape of insulator layer have just been formed.Second step formed the bottom electrode (0.08mm * 0.08mm square) of magnetic tunnel-junction magneto-resistor chip sensing part and the shape of contact conductor (long 1mm, wide 0.01mm), and bottom electrode and contact conductor are made up of lower floor's ferromagnetic layer and inverse ferric magnetosphere; Different with the first step is, except form the photoresist overlay area of bottom electrode and contact conductor shape, also need form the top electrode that is shaped in the first step and the photoresist overlay area of insulator layer shape at multi-layer film surface, other process is identical.The 3rd step formed the shape of conductive film bar, and is promptly on the circular foundation that forms in the protection first step and second step, that the right-angled intersection of duplicature photoetching, etching growth 10mm, wide 1mm that produces bias magnetic field and reset function is rectangular.So just on the thermal oxidation silicon substrate, made form by magnetic tunnel-junction magneto-resistor four tunics and conductive film bar duplicature, to the magnetic tunnel-junction magneto-resistor chip (referring to Figure 10 and Figure 11) of single direction magnetic-field-sensitive, vertically place in twos by three groups of such identity units, just constituted the 3 D weak magnetic field detection means, referring to Figure 12.
The shape of the conductive film bar of the shape of magnetic tunnel-junction magneto-resistor sensing part and extraction electrode and generation bias magnetic field and reset function is not subjected to the restriction of present embodiment.
Claims (3)
1, a kind of 3 D weak magnetic field detection means of using the magnetic tunnel-junction magnetic resistance material is characterized in that: be made up of three groups of identical magnetic tunnel-junction magneto-resistor chips (15) that three dimensional intersection is placed, the magnetic-field-sensitive direction of each chip is vertical mutually; Magnetic tunnel-junction magneto-resistor chip (15) is by substrate (1) with the conductive film bar of the generation bias magnetic field that generates thereon part (12) and produce the conductive film bar part (13) and magnetic tunnel-junction magneto-resistor sensing part (14) formation of reset function; Magnetic tunnel-junction magneto-resistor sensing part (14) is made of magnetic tunnel-junction and electric signal output electrode and contact conductor; Producing the conductive film bar part (12) of bias magnetic field and the conductive film bar part (13) of generation reset function forms by go up the duplicature that generates by conductive membrane layer (2) and insulator layer (3) order at substrate (1), electrical current carriers with intersection bar shaped, wherein a part is used to produce bias magnetic field, another part is used to produce reset function, two corner dimensions that intersect bar shaped determine that by the coupling direction of ferromagnetic layer about the magnetic tunnel-junction and the angle of bias magnetic field direction insulator layer (3) is used for separating the conductive membrane layer (2) of conductive film bar and the magnetic tunnel-junction magneto-resistor sensing part (14) on the conductive film bar.
2, according to the described device of claim 1, it is characterized in that: substrate (1) is plastics, poly-four compound macromolecular materials, or glass, silicon dioxide amorphous material, or magnesium oxide, aluminium oxide, zinc paste, barium titanate, lead titanates, lead zirconates, lead zirconate titanate, metatitanic acid zirconic acid lanthanum lead plumbate metal oxide materials, or silicon, gallium arsenide semiconductor material; The conductive membrane layer (2) that is deposited in the conductive film bar is Al, Cu, Au, Ag, Pt, Ta, AlCu metal simple-substance or alloy-layer, or iridium dioxide, ruthenic oxide metal-oxide film layer; Insulator layer (3) is alundum (Al, silicon dioxide, magnesium oxide, tantalum pentoxide, titania, vanadium pentoxide, zinc paste, barium titanate, lead titanates, lead zirconates, lead zirconate titanate, metatitanic acid zirconic acid lanthanum lead plumbate oxide skin(coating), or tantalum nitride, aluminium nitride, silicon nitride, titanium nitride nitride layer, or silit carbonization thing; Conductive membrane layer in the duplicature of its conductive film bar (2) and insulator layer (3) thickness are respectively 10 nanometers to 5000 nanometers.
3, according to claim 1 or 2 described devices, it is characterized in that: the trilamellar membrane that magnetic tunnel-junction magneto-resistor sensing part (14) is made of the order by ferromagnetic layer (4), insulator layer (5) and ferromagnetic layer (6) that generates on the conductive film bar duplicature, perhaps press four tunics that the order of ferromagnetic layer (4), insulator layer (5), ferromagnetic layer (6) and antiferromagnetic layer (9) constitutes, perhaps the sensing part of the four tunics composition that constitutes by the order of antiferromagnetic layer (9), ferromagnetic layer (4), insulator layer (5) and ferromagnetic layer (6); The magnetic tunnel-junction of sensing part is placed the center of cross-conduction film tape; The ferromagnetic layer (4) (6) on its insulator layer (5) both sides and antiferromagnetic layer (9) are simultaneously as drawing the output electrode that changes the change in electric that causes owing to magneto-resistor; The ferromagnetic layer (4) (6) of its magnetic tunnel-junction magneto-resistor sensing part (14) and the thickness of antiferromagnetic layer (9) are respectively 10 nanometers to 5000 nanometers; The thickness of insulator layer (5) is that 0.5 nanometer is to 10 nanometers; The ferromagnetic layer (4) (6) that magnetic tunnel-junction magneto-resistor sensing part (14) is deposited is Ni, Co, Fe elemental metals layer, or NiFe, NiCo, CoFe, NiCu, AuCo are the metal alloy layer of base with Ni, Co, Fe, or contain the iron layer of 5%～40% oxygen atom, or GaMnAs ferromagnetic semiconductor layer, or ferrite ferrimagnetic layer; Insulator layer (5) is alundum (Al, tantalum pentoxide, vanadium pentoxide, magnesium oxide, silicon dioxide, titania oxide skin(coating), or tantalum nitride, aluminium nitride, silicon nitride, titanium nitride nitride layer, or zinc sulphide sulfurized layer, or aluminium arsenide arsenide layer; Antiferromagnetic layer (9) is FeMn, IrMn metal alloy layer, or nickel oxide, cobalt oxide oxide skin(coating).
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| CN 01134693 CN1234017C (en) | 2001-11-13 | 2001-11-13 | Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field |
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| CN 01134693 CN1234017C (en) | 2001-11-13 | 2001-11-13 | Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field |
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| CN1297953C (en) * | 2004-12-28 | 2007-01-31 | 北京科技大学 | Method for preparing dual-vertical spin valve and its structure |
| CN101034145B (en) * | 2006-03-10 | 2011-05-04 | 中国科学院物理研究所 | Integrated three-dimensional superconductive composite magnetic field sensor and manufacturing method and use thereof |
| CN201748928U (en) * | 2010-09-07 | 2011-02-16 | 王建国 | Tunnel magnetoresistance effect magnetic encoder |
| CN102385043B (en) * | 2011-08-30 | 2013-08-21 | 江苏多维科技有限公司 | Magnetic tunnel junction (MTJ) triaxial magnetic field sensor and packaging method thereof |
| CN102426344B (en) | 2011-08-30 | 2013-08-21 | 江苏多维科技有限公司 | Triaxial magnetic field sensor |
| CN104793155B (en) * | 2014-01-21 | 2017-12-08 | 上海矽睿科技有限公司 | A kind of preparation technology of magnetic sensing device and the device |
| CN103792501B (en) * | 2014-01-22 | 2016-03-30 | 中国人民解放军国防科学技术大学 | The graphene-based Magnetic Sensor of a kind of bridge connected |
| CN105182254B (en) * | 2015-07-31 | 2018-01-05 | 江汉大学 | Static weak magnetic field testing device |
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