CN1217195C - MEMS piezoresistance type servo acceleration transducer and its preparing method - Google Patents
MEMS piezoresistance type servo acceleration transducer and its preparing method Download PDFInfo
- Publication number
- CN1217195C CN1217195C CN 03104781 CN03104781A CN1217195C CN 1217195 C CN1217195 C CN 1217195C CN 03104781 CN03104781 CN 03104781 CN 03104781 A CN03104781 A CN 03104781A CN 1217195 C CN1217195 C CN 1217195C
- Authority
- CN
- China
- Prior art keywords
- silicon
- acceleration transducer
- mems
- servo
- resistance type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Pressure Sensors (AREA)
Abstract
The present invention relates to an MEMS piezoresistance type servo acceleration sensor which comprises three silicon chips, wherein the three silicon chips form a sandwich structure which comprises an upper silicon cap, a middle silicon chip and a lower silicon cap. Feedback electrodes are arranged on both the upper and the lower silicon caps, and a voltage dependent resistor is arranged on a girder structure which is arranged on the middle silicon chip; thereby, a Wheatstone bridge is formed for detecting an acceleration signal, and output voltage generated by the bridge is converted by a signal modulation circuit into feedback voltage which acts on an electrostatic force feedback pole plate to form closed loop servo detection; in addition, the present invention also relates to a method for prepare the sensor. The present invention has the advantages that the difficulty of the circuit is reduced, the servo control of the acceleration sensor is realized under the condition of no need of high precision integrated circuit technology, and the precision of the detection is enhanced; the shock resistance of the sensor is strengthened considerably due to the adopted sandwich structure, the scope of the application of the sensor is enlarged, and the present invention can be widely used in the technical field of MEMS.
Description
The present invention relates to a kind of MEMS (microelectromechanical systems) device, relate in particular to the servo acceleration transducer of a kind of MEMS pressure resistance type.
The MEMS acceleration transducer be early develop in the microelectromechanical systems one of product.It is several to be divided into pressure resistance type, condenser type, piezoelectric type etc. by principle, about the working mechanism and the job operation of MEMS acceleration transducer has a lot of experimental studies.Referring to A MONOLITHIC SILICONACCELEROMETER WITH INTERGRAL AIR DAMPING AND OVERRANGEPROTECTION, Phillip W.Barth, NovaSensor; A SIMPLE HIGH PERFORMANCEPIEZORESISTIVE ACCELEROMETER, James T.Suminto.Yet because the acceleration transducer measurement is Dynamic Signal, be subjected to the influence of environment for use bigger, cause the measuring accuracy of acceleration transducer lower, usually accuracy rating is between 10%-1%, limited the application of acceleration transducer greatly, the volume that MEMS is had is little, in light weight, feature richness and produce low cost and other advantages in batches and do not obtain real performance.The servo acceleration transducer of ADXL series MEMS condenser type has been invented by ADI company up to the nineties middle and later periods, just really makes the MEMS acceleration transducer begin to produce in batches and use.Referring to UNDERSTANDING ACCELEROMETER SCALE FACTOR ANDOFFSET ADJUSTMENTS, Charles Kitchin, ANALOG DEVICES AN-396.Yet, because the principle that the product of ADI company adopts is to utilize capacitance variations to come the sense acceleration signal, non-linear and the small capacitance of capacitance variations detects the accuracy of detection that the spurious signal serious interference of being brought has restricted acceleration transducer, the testing circuit complexity, because what this product adopted is surface silicon MEMS technology, impact resistance is poor, and these have all limited the application of MEMS acceleration transducer aspect the high precision acceleration analysis.
The purpose of this invention is to provide the servo acceleration transducer of a kind of MEMS pressure resistance type, improve measuring accuracy, strengthen impact resistance.And a kind of method for preparing the servo acceleration transducer of this MEMS pressure resistance type.
The servo acceleration transducer of MEMS pressure resistance type of the present invention comprises three silicon chips, three silicon chips are formed the sandwich structure of upper silicon cap, middle silicon chip and lower silicon cap, all establish feedback electrode on the two-layer up and down silicon cap, establish girder structure on the middle silicon chip, establish voltage dependent resistor (VDR) on the beam, form Wheatstone bridge and come the sense acceleration signal, the output voltage that signal modulation circuit produces electric bridge is transformed into feedback voltage and acts on and form closed loop servo on the electrostatic force feedback pole plate of sensor and detect.
Described voltage dependent resistor (VDR) is located at the maximum strain district of described beam.
The bit architecture of all limiting on the two-layer up and down silicon cap.
The method for preparing the servo acceleration transducer of MEMS pressure resistance type of the present invention, its step comprises:
(1) layout design: the pressure drag position of silicon chip in the middle of setting, use p
+Pressure drag is drawn sensitive membrane,, carve the structure of beam again with ICP, carve behind the fairlead sputtered aluminum and form and be electrically connected the feedback electrode of lower silicon cap in the sputter by dual surface lithography corrosion back of the body chamber;
(2) form pressure drag with ion implantation technology;
(3) the dense boron of diffusion forms p
+The district;
(4) corrosion back of the body chamber forms the pressure-sensitive film;
(5) etching pressure-sensitive film forms sensitive beam;
(6) carve fairlead, splash-proofing sputtering metal, alloy is finished being electrically connected of chip;
(7) splash-proofing sputtering metal forms electrode on last lower silicon cap;
(8) will go up lower silicon cap and the intermediate structure layer is bonded together.
The present invention sets the pressure drag position of middle silicon chip with the maximum strain district of pressure drag set positions in middle silicon chip beam by the ANSYS software simulation in layout design.
Also on last lower silicon cap, erode away position limiting structure in the above-mentioned preparation.
The servo acceleration transducer of MEMS pressure resistance type of the present invention has reduced the circuit difficulty, has realized the servocontrol of acceleration transducer under the situation that does not need the high precision integrated circuit technology, has improved accuracy of detection.The sandwich structure that is adopted has strengthened the impact resistance of sensor greatly, has enlarged the scope of application of this sensor.
Description of drawings:
Fig. 1 has MEMS acceleration sensor structure synoptic diagram now
1---stiff end 2---pressure drag 3---semi-girder 4---mass
The servo acceleration sensor structure synoptic diagram of Fig. 2 MEMS pressure resistance type of the present invention
5---upper silicon cap 6---sensitive structure 7---lower silicon cap 8---feedback electrode 9---limited block
Fig. 3 part process schematic representation
(a) the ion injection forms pressure drag (b) and diffuses to form p
+Connect (c) sputtered aluminum, alloy
(d) corrosion forms sensitive structure
Embodiment:
The present invention adopts three layers of silicon chip sandwich structure consisting, adopt corrosion at the intermediate silicon layer sheet, MEMS technologies such as etching are produced girder structure, after optimal design, adopt injection technology to produce voltage dependent resistor (VDR) with the proportional variation of acceleration signal in the maximum strain district of beam, form Wheatstone bridge and come the sense acceleration signal, be transformed into feedback voltage with the proportional output voltage of acceleration signal and act on the electrostatic force feedback pole plate of sensor what electric bridge produced by signal modulation circuit again, make beam be operated in the small deformation state, making position limiting structure and feedback electrode on the two-layer silicon cap up and down simultaneously, forming closed loop servo and detect.
Below be a specific embodiment:
The present invention adopts 4 inch 400 micron thickness N type＜100〉twin polishing monocrystalline silicon piece, resistivity 2-4 Ω cm.
1, silicon chip carries out original oxidation 300-350nm after cleaning;
2, adopt ion implantation technology to prepare the high precision pressure drag, injection condition is 90-120KeV, 1.0 * 10
14Cm
-2-2.0 * 10
14Cm
-2, to carry out boron then and drive in, condition is 1000-1500 ℃, 80-120 minute;
3, dense boron diffusion forms p
+Connect annealing back bulk concentration＞5.0 * 10
18Cm
-3
4, KOH corrosion back of the body chamber forms the pressure-sensitive film;
5, ICP etching pressure-sensitive film forms sensitive beam;
6, carve fairlead, sputtered aluminum, alloy, 400-420 ℃, 30 minutes;
7, KOH corrosion silicon cap forms position limiting structure;
8, bonding, scribing.
A whole set of technology will be noted the compatibility between each operation, the process sequence of each operation of reasonable distribution, and the potassium ion that brings when avoiding because of the KOH corrosion pollutes other operations.
Claims (7)
1, the servo acceleration transducer of a kind of MEMS pressure resistance type, comprise three silicon chips, the sandwich structure that it is characterized in that three silicon chips composition silicon caps, middle silicon chip and lower silicon caps, all establish feedback electrode on the two-layer up and down silicon cap, establish girder structure on the middle silicon chip, establish voltage dependent resistor (VDR) on the beam, form Wheatstone bridge sense acceleration signal, the output voltage that signal modulation circuit produces electric bridge is transformed into feedback voltage and acts on and form closed loop servo on the electrostatic force feedback pole plate of sensor and detect.
2, the servo acceleration transducer of MEMS pressure resistance type as claimed in claim 1 is characterized in that described voltage dependent resistor (VDR) is located at the maximum strain district of described beam.
3, the servo acceleration transducer of MEMS pressure resistance type as claimed in claim 1, the bit architecture of all limiting on the two-layer silicon cap about it is characterized in that.
4, a kind of method for preparing the servo acceleration transducer of MEMS pressure resistance type, its step comprises:
(1) layout design: the pressure drag position of silicon chip in the middle of setting, use p
+Pressure drag is drawn sensitive membrane,, carve the structure of beam again with ICP, carve behind the fairlead sputtered aluminum and form and be electrically connected the feedback electrode of lower silicon cap in the sputter by dual surface lithography corrosion back of the body chamber;
(2) form pressure drag with ion implantation technology;
(3) the dense boron of diffusion forms p
+The district;
(4) corrosion back of the body chamber forms the pressure-sensitive film;
(5) etching pressure-sensitive film forms sensitive beam;
(6) carve fairlead, splash-proofing sputtering metal, alloy is finished being electrically connected of chip;
(7) splash-proofing sputtering metal forms electrode on last lower silicon cap;
(8) will go up lower silicon cap and the intermediate structure layer is bonded together.
5, the method for preparing the servo acceleration transducer of MEMS pressure resistance type as claimed in claim 4 is characterized in that passing through the pressure drag position that the ANSYS software simulation is set middle silicon chip in layout design.
6, as claim 4 or the 5 described methods that prepare the servo acceleration transducer of MEMS pressure resistance type, it is characterized in that the maximum strain district of pressure drag set positions in middle silicon chip beam.
7, the method for preparing the servo acceleration transducer of MEMS pressure resistance type as claimed in claim 4 is characterized in that eroding away position limiting structure on last lower silicon cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03104781 CN1217195C (en) | 2003-02-28 | 2003-02-28 | MEMS piezoresistance type servo acceleration transducer and its preparing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03104781 CN1217195C (en) | 2003-02-28 | 2003-02-28 | MEMS piezoresistance type servo acceleration transducer and its preparing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1431517A CN1431517A (en) | 2003-07-23 |
| CN1217195C true CN1217195C (en) | 2005-08-31 |
Family
ID=4790070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03104781 Expired - Fee Related CN1217195C (en) | 2003-02-28 | 2003-02-28 | MEMS piezoresistance type servo acceleration transducer and its preparing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1217195C (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100458466C (en) * | 2005-07-05 | 2009-02-04 | 威海双丰物探设备股份有限公司 | MEMS acceleration earthquake sensor |
| US7630121B2 (en) * | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
| CN102175890B (en) * | 2011-01-12 | 2012-07-11 | 北京航天控制仪器研究所 | Sandwich type translational closed-loop silicon-micro-accelerometer |
| CN102175932B (en) * | 2011-01-26 | 2013-05-29 | 北京大学 | Charge testing method in plasma environment and testing system |
| ITTO20120542A1 (en) | 2012-06-20 | 2013-12-21 | St Microelectronics Srl | MICROELETTROMECHANICAL DEVICE WITH SIGNAL INSERTION THROUGH A PROTECTIVE HOOD AND METHOD FOR CHECKING A MICROELECTROMECHANICAL DEVICE |
| CN105621346B (en) * | 2014-11-04 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | MEMS and forming method thereof |
| CN106018879B (en) * | 2016-05-12 | 2019-03-22 | 广东合微集成电路技术有限公司 | A kind of MEMS acceleration transducer and manufacturing method |
| GB2550411B (en) * | 2016-05-20 | 2019-04-03 | Hp1 Tech Ltd | Device for detecting a force |
| CN113567707A (en) * | 2021-08-26 | 2021-10-29 | 维沃移动通信有限公司 | Acceleration detection device, detection system, electronic device, and acceleration detection method |
-
2003
- 2003-02-28 CN CN 03104781 patent/CN1217195C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1431517A (en) | 2003-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1217195C (en) | MEMS piezoresistance type servo acceleration transducer and its preparing method | |
| Dao et al. | Silicon piezoresistive six-degree of freedom force-moment micro sensor | |
| CN1804636A (en) | Differential capacitance type acceleration transducer with frame structure | |
| CN1975358A (en) | Low-temperature film pressure sensor and producing method thereof | |
| US20190146003A1 (en) | Micromechanical inertial sensor | |
| CN110455656B (en) | Precision actuation/sensing dual-mode integrated micro-mechanical comb tooth structure and detection method | |
| CN210665355U (en) | Precision actuation/perception dual-mode integrated micro-mechanical comb tooth structure | |
| CN207622899U (en) | A kind of diaphragm pressure sensing element of triplex redundance | |
| CN1821787A (en) | Three dimensional integrated micro mechanical acceleration sensor and producing method | |
| CN1193218C (en) | NEMS piezoresistive pressure sensor chip and its making process | |
| CN112034203B (en) | High-precision tunnel type accelerometer and preparation method thereof | |
| CN1609604A (en) | Measuring structure and method for micro-electronic mechanical system multi-layer membrane stress and yang's modulus | |
| CN206362469U (en) | A kind of high temperature film pressure-sensing device | |
| CN110531115B (en) | MEMS piezoresistive triaxial impact accelerometer chip with pure axial deformation sensitive beam and preparation method thereof | |
| CN111595381A (en) | Bionic cilium capacitive micro-sensor with back lead and preparation method thereof | |
| Chauffleur et al. | Influence of the bonding conditions on the response of capacitive pressure sensors | |
| Lv et al. | A touch mode capacitive pressure sensor with long linear range and high sensitivity | |
| JP2800561B2 (en) | Measurement equipment for thin film mechanical properties | |
| CN110501521B (en) | Piezoelectric accelerometer | |
| CN1170153C (en) | Making process of miniature unsym-dimethylhydrazine gas sensor with temperature and humidity compensation function | |
| KR20010056825A (en) | Piezoresistor type sensor structure with minimized other-axes sensitivity and method for fabricating the same | |
| Fang et al. | Flexible tactile sensor array utilizing microstructured PDMS bumps with PEDOT: PSS conductive polymer | |
| DD236173A1 (en) | HUMIDITY SENSOR | |
| Wang et al. | An improved structural design for accelerometers based on slotted eight-beam structure | |
| EP1877745A1 (en) | Micromechanical pressure/force sensor and corresponding production method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050831 Termination date: 20130228 |