CN117742078A - Processing method of double-sided superlens - Google Patents
Processing method of double-sided superlens Download PDFInfo
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- CN117742078A CN117742078A CN202211123393.6A CN202211123393A CN117742078A CN 117742078 A CN117742078 A CN 117742078A CN 202211123393 A CN202211123393 A CN 202211123393A CN 117742078 A CN117742078 A CN 117742078A
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- 238000001259 photo etching Methods 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
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- 238000001459 lithography Methods 0.000 claims description 27
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- 238000005530 etching Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
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- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000005331 crown glasses (windows) Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000005308 flint glass Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a processing method of a double-sided superlens, which comprises the following steps: a first structure layer is arranged on the first surface of the substrate, and first photoetching operation is carried out on the first structure layer to obtain a first nano structure and an alignment identification mark; disposing a second structural layer on a second surface of the substrate; manufacturing an alignment window at a position corresponding to the alignment identification mark on the second structural layer; and aligning based on the alignment identification mark, and executing a second photoetching operation on the second structural layer to obtain a second nano structure. According to the processing method of the double-sided superlens, the alignment identification mark obtained during the first photoetching operation and the alignment window at the corresponding position of the second structural layer are used for identifying the alignment identification mark through the alignment window, aligning and performing the second photoetching operation. The method breaks the precision limit of the traditional back surface alignment process, and improves the alignment precision when the first nano structure and the second nano structure are processed to the precision of the photoetching machine.
Description
Technical Field
The invention relates to the technical field of superlens processing, in particular to a processing method of a double-sided superlens.
Background
At present, a contact exposure back surface alignment process is generally adopted to manufacture a double-sided superlens (such as a superlens with different nano structures on the front surface and the back surface of the same wafer), after a nano structure on the front surface of a certain wafer is obtained by processing, an alignment mark is arranged on the back surface, the back surface of the wafer is identified by a photoetching machine detector to identify the alignment mark, and the nano structure on the back surface is processed to finally obtain the double-sided superlens.
However, the precision of the processing method is limited by the precision of the traditional alignment process, the precision is positive and negative 1 μm, and the alignment requirement of the high-precision double-sided superlens is difficult to meet.
Disclosure of Invention
In order to solve the above problems, an object of an embodiment of the present invention is to provide a method for processing a double-sided superlens.
The embodiment of the invention provides a processing method of a double-sided superlens, which comprises the following steps: a first structure layer is arranged on the first surface of a substrate, and a first photoetching operation is carried out on the first structure layer to obtain a first nano structure and an alignment identification mark; the substrate is transparent in the working wave band of the photoetching machine detector; providing a second structural layer on a second surface of the substrate; manufacturing an alignment window at a position of the second structural layer corresponding to the alignment identification mark, wherein the size of the alignment window is larger than that of the alignment identification mark; under the condition that the second surface is an operation surface, aligning the second structure layer through the alignment window and based on the alignment identification mark, and executing a second photoetching operation on the second structure layer to obtain a second nano structure; the operative surface represents a surface of the substrate currently being processed by the lithography machine.
Optionally, performing a first lithographic operation on the first structural layer includes: coating a first photoresist layer on the surface of the first structural layer, and exposing and developing the first photoresist layer to obtain a first reference structure; the first reference structure is the first structure layer exposed after the exposure and development; and etching the first reference structure, and removing the residual first photoresist layer to obtain the first nano structure and the alignment identification mark.
Optionally, manufacturing an alignment window at a position of the second structural layer corresponding to the alignment identification mark includes: and coating a second photoresist layer on the surface of the second structural layer, and performing window photoetching operation on the position corresponding to the alignment identification mark based on a back alignment process to obtain the alignment window.
Optionally, performing a window lithography operation on a position corresponding to the alignment identification mark based on a back overlay process to obtain the alignment window, including: window exposure and development are carried out on the second photoresist layer at the position corresponding to the alignment identification mark, so that an alignment window structure is obtained; the alignment window structure is the second structure layer exposed after the window exposure and development; and etching the alignment window structure to obtain the alignment window.
Optionally, performing a second lithographic operation on the second structural layer, including: exposing and developing the second photoresist layer again to obtain a second reference structure, wherein the second reference structure is the second structure layer exposed after exposure and development again; and etching the second reference structure, and removing the residual second photoresist layer to obtain the second nanostructure.
Optionally, before the alignment window is fabricated at the position corresponding to the alignment identification mark on the second structural layer, the processing method of the double-sided superlens further includes: spin-coating temporary bonding glue on one side surface of the bonding substrate; and carrying out temporary bonding on the first surface of the base with the first nano structure and the bonding substrate through the temporary bonding glue.
Optionally, after the second nanostructure is obtained, the processing method of the double-sided superlens further includes: and de-bonding the first surface of the substrate with the first nano structure with the bonding substrate to obtain the double-sided superlens.
Optionally, debonding the first surface of the base having the first nanostructure from the bonding substrate comprises: and dissolving the temporary bonding glue.
Optionally, disposing a first structural layer on the first surface of the substrate, including: evaporating the first structural layer on the first surface of the substrate; the disposing a second structural layer on a second surface of the substrate includes: and evaporating the second structural layer on the second surface of the substrate.
Alternatively, the substrate is a glass substrate.
Optionally, the glass substrate comprises: quartz wafer.
Optionally, the first structural layer and the second structural layer are both made of polysilicon material.
In the above-mentioned scheme provided by the embodiment of the invention, the first nanostructure and the alignment identification mark are obtained by performing the first lithography operation on the first structural layer, and the alignment window is made on the surface of the second structural layer corresponding to the position of the alignment identification mark, so that the alignment identification mark of the micron level can be identified through the alignment window before the lithography machine performs the second lithography operation on the second structural layer on the operation surface (the second surface), and the double-sided superlens is finally made based on the accuracy alignment of the lithography machine and the second lithography operation. The method can break the precision limit of the traditional back surface alignment process, improves the alignment precision of the first nano structure and the second nano structure to the precision of the photoetching machine, improves the alignment precision of the front and back surface superlenses, and controls the alignment precision below 100nm, for example.
In order to make the above objects, features and advantages of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows a flow chart of a method for processing a double-sided superlens according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a first structural layer disposed on a first surface of a substrate in the method for processing a double-sided superlens according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a first nanostructure in a method for fabricating a double-sided superlens according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an alignment identification mark in the method for processing a double-sided superlens according to the embodiment of the present invention;
fig. 5 is a schematic layout diagram of a plurality of alignment identification marks in the processing method of a double-sided superlens according to the embodiment of the present invention;
FIG. 6 is a schematic diagram showing a second structural layer disposed on a second surface of a substrate in the method for fabricating a double-sided superlens according to the embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating a process for fabricating an alignment window in a second structural layer in the method for fabricating a double-sided superlens according to the embodiment of the present invention;
FIG. 8 is a schematic diagram of a second nanostructure in a method for fabricating a double-sided superlens according to an embodiment of the present invention;
FIG. 9 is a flowchart of a first photolithography operation performed on a first structural layer in a method for fabricating a double-sided superlens according to an embodiment of the present invention;
FIG. 10 is a schematic diagram showing a first photoresist layer disposed on a surface of a first structural layer in the method for fabricating a double-sided superlens according to the embodiment of the present invention;
FIG. 11 is a schematic diagram showing a first reference structure disposed on a surface of a first photoresist layer in the method for fabricating a double-sided superlens according to an embodiment of the present invention;
FIG. 12 is a schematic diagram showing a method for manufacturing a double-sided superlens according to an embodiment of the present invention, in which a second photoresist layer is coated on a surface of a second structural layer;
FIG. 13 is a schematic diagram showing an alignment window structure disposed on a surface of a second photoresist layer in the method for fabricating a double-sided superlens according to an embodiment of the present invention;
FIG. 14 is a schematic diagram showing an alignment window in the method for manufacturing a double-sided superlens according to the embodiment of the present invention;
FIG. 15 is a flowchart of a second photolithography operation performed on a second structural layer in the method for fabricating a double-sided superlens according to the embodiments of the present invention;
FIG. 16 is a schematic diagram showing a second reference structure disposed on a surface of a second photoresist layer in the method for fabricating a double-sided superlens according to the embodiment of the present invention;
FIG. 17 is a schematic diagram of a second nanostructure in the method for fabricating a double-sided superlens according to an embodiment of the present invention;
fig. 18 is a schematic diagram showing spin-coating temporary bonding glue on a bonding substrate in the method for processing a double-sided superlens according to the embodiment of the present invention;
fig. 19 is a schematic diagram showing temporary bonding performed by temporary bonding glue in the processing method of the double-sided superlens according to the embodiment of the present invention.
Icon:
1-base, 21-first structural layer, 22-second structural layer, 31-first photoresist layer, 32-second photoresist layer, 211-first nanostructure, 212-alignment identification mark, 221-second nanostructure, 10-alignment window, 4-bonding substrate, 5-temporary bonding glue layer.
Detailed Description
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The embodiment of the invention provides a processing method of a double-sided superlens, which is shown in fig. 1, and comprises the following steps 101-104.
Step 101: providing a first structural layer 21 on the first surface of the substrate 1, and performing a first lithography operation on the first structural layer 21 to obtain a first nanostructure 211 and an alignment identification mark 212; the substrate 1 is transparent in the operating band of the lithography machine detector.
In the embodiment of the present invention, the substrate 1 has two surfaces, such as a first surface and a second surface, where the first surface may be the front surface of the substrate 1, and correspondingly, the second surface may be the back surface of the substrate 1; alternatively, the first surface may be a back surface of the substrate 1, and accordingly, the second surface may be a front surface of the substrate 1, which is not limited by the embodiment of the present invention. Referring to fig. 2, a first structural layer 21 is disposed on a first surface of the substrate 1, where the first structural layer 21 is a material layer for making the first nanostructure 211, and the material of the first structural layer 21 is a material having a high transmittance for light in an operating band (e.g., an operating band of a lithography detector). In the embodiment of the invention, the substrate 1 is transparent in the working band of the photoetching machine detector, and optionally, the substrate 1 is a glass substrate; because the working wave band of the photoetching machine detector adopted by the embodiment of the invention can be a visible light wave band and/or an infrared light wave band, the material of the substrate 1 can be glass material with high transmittance for the light of the working wave band, for example, crown glass, flint glass and the like can be selected as the substrate 1; alternatively, the glass substrate may include: quartz wafers, such as fused silica (a vitreous type of quartz). According to the embodiment of the invention, the quartz wafer is selected as the substrate 1, so that the substrate 1 of the double-sided superlens has a lower thermal expansion coefficient and a longer service life, and has higher stability, and the quartz wafer is transparent in a visible light wave band and/or an infrared light wave band, and can be used as the substrate 1 to enable a photoetching machine detector to identify the other side of the quartz wafer through the substrate 1; in addition, quartz wafers are also relatively suitable for use in common lithographic machines.
In the embodiment of the present invention, the photolithography process performed on the first structural layer 21 is referred to as a first photolithography process, and compared with the conventional photolithography process, the first photolithography process needs to obtain the alignment identification mark 212 in the process of photolithography on the first structural layer 21 to obtain the first nanostructure 211, as shown in fig. 3 and fig. 4, fig. 3 is a schematic side view diagram of obtaining the first nanostructure 211, where, for convenience in distinguishing the first nanostructure 211 from the alignment identification mark 212, different patterns are adopted in the drawing, but in reality, the first nanostructure 211 and the alignment identification mark 212 are both structures obtained by etching the first structural layer 21, and the materials of the two are the same; FIG. 4 is a schematic top view of the alignment mark 212; the alignment identification mark 212 is a mark made by a lithography machine, which is a micron-scale mark with high accuracy; the second surface of the substrate 1 may serve to align the substrate 1 with a lithographic machine during subsequent processing, which may include one or more cross patterns, for example, alignment identification marks 212 (shown in fig. 5) of a row or column of cross structures may be provided at the edge of the substrate 1.
Step 102: a second structural layer 22 is provided on the second surface of the substrate 1.
As shown in fig. 6, a method consistent with the first structure layer 21 disposed on the first surface may be adopted, and the second structure layer 22 is disposed on the second surface of the substrate 1, where the second structure layer 22 is a material layer used to make the second nanostructure 221, and the material of the second structure layer 22 may also be a material having a high transmittance for light in the operating band.
It should be noted that, in the embodiment of the present invention, step 102 may be performed after step 101, or step 102 may be performed while the first structural layer 21 is disposed in step 101, that is, the corresponding structural layers are disposed on both surfaces of the substrate 1 at the same time.
Step 103: an alignment window 10 is made at a position of the second structure layer 22 corresponding to the alignment identification mark 212, and the size of the alignment window 10 is larger than the size of the alignment identification mark 212.
Referring to fig. 7, a conventional back overlay process may be used in the embodiment of the present invention to identify a region corresponding to the alignment identification mark 212 on the surface of the second structural layer 22, and make an alignment window 10 with a larger size for the region; in other words, if the alignment window 10 is orthographically projected onto the first surface, the first surface at the orthographic projection position has the alignment identification mark 212; alternatively, it is also possible to consider that the alignment mark 212 on the first surface has a front projection on the second surface not exceeding the range of the alignment window 10, which corresponds to the inclusion of the alignment mark 212 in the alignment window 10. Since the alignment window 10 obtained in this step is only used to represent the approximate position of the alignment mark 212, and the overlay accuracy of the conventional backside overlay process is positive and negative 1 μm, the size (e.g., area) of the alignment window 10 should be larger than the size (e.g., area) of the alignment mark 212 by a certain value, such as an accuracy at least greater than one unit. For example, the size of the alignment mark 212 is 2 μm×2 μm, and the size of the alignment window 10 may be 3 μm×3 μm.
Step 104: in the case that the second surface is an operation surface, performing alignment through the alignment window 10 and based on the alignment identification mark 212, and performing a second lithography operation on the second structure layer 22 to obtain a second nanostructure 221; the operative surface represents the surface of the substrate 1 currently being processed by the lithography machine.
In the embodiment of the present invention, the surface currently being processed by the lithography machine is referred to as an operation surface, and the direction of the operation surface is generally upward, that is, in the case that the second surface of the substrate 1 faces upward (i.e., the second surface is the operation surface) (as shown in fig. 7), the lithography machine can identify the alignment identification mark 212 on the first surface through the alignment window 10 (on the second surface) manufactured in the above step 103, and by aligning the alignment identification mark 212, the lithography machine and the substrate 1 achieve the nano-scale precision alignment, which is equivalent to directly improving the alignment precision of the first nanostructure 211 and the second nanostructure 221 to the precision of the lithography machine itself; and performs a second lithography operation, which may be, for example, a conventional semiconductor lithography process, based on the aligned second structural layer 22, resulting in a second nanostructure 221 (as shown in fig. 8), enabling fabrication of a double sided superlens. Those skilled in the art will appreciate that in the case where the lithographic machine performs a first lithographic operation, the operating surface is a first surface.
According to the embodiment of the invention, the first photoetching operation is carried out on the first structural layer 21, the first nano structure 211 and the alignment identification mark 212 are obtained at the same time, and the alignment window 10 is manufactured on the second structural layer 22 corresponding to the position of the alignment identification mark 212, so that the photoetching machine can identify the alignment identification mark 212 with the position precision of nano level through the alignment window 10 before carrying out the second photoetching operation on the second structural layer 22 on the operation surface (second surface), and the double-sided superlens is finally manufactured based on the self precision alignment of the photoetching machine and carrying out the second photoetching operation. The method can break the precision limit of the traditional back surface alignment process, improves the alignment precision of the first nano structure and the second nano structure to the precision of the photoetching machine, improves the alignment precision of the front and back surface superlenses, and controls the alignment precision below 100nm, for example.
Optionally, as shown with reference to FIG. 9, performing a first lithographic operation on the first structural layer 21 may include the following steps 1011-1012.
Step 1011: coating a first photoresist layer 31 on the surface of the first structural layer 21, and exposing and developing the first photoresist layer 31 to obtain a first reference structure; the first reference structure is the exposed first structural layer 21 after exposure and development.
Referring to fig. 10, in the embodiment of the present invention, a spin coating manner may be adopted to coat photoresist on the surface of the first structural layer 21, so as to obtain a first photoresist layer 31; the photoresist is a material with changeable solubility under the photoetching step of the traditional semiconductor technology; spin coating is simply called spin coating, and a commonly used device is a spin coater, and the thickness of the film is controlled by controlling the time, the rotation speed and the liquid dropping amount of spin coating, and the concentration and the viscosity of the used solution, so that the thickness of the coated first photoresist layer 31 is uniform and controllable. Wherein, one side surface (such as the first surface) of the substrate provided with the first photoresist layer 31 is upward and is put into a photoetching machine to expose and develop, it should be noted that, at this time, the first surface is the operation surface of the photoetching machine which needs to be processed at present because the first surface is upward; during the exposure and development process, the first photoresist layer 31 will be dissolved, exposing the first reference structure; the first reference structure is the first structural layer 21 corresponding to the dissolved first photoresist layer 31, in other words, the first reference structure is the first structural layer 21 exposed by the surface without the first photoresist layer 31, such as the groove structure shown in fig. 11; in addition, the exposure process includes, but is not limited to, ultraviolet exposure, deep ultraviolet exposure, and extreme ultraviolet exposure.
Step 1012: and etching the first reference structure, and removing the residual first photoresist layer 31 to obtain a first nanostructure 211 and an alignment identification mark 212.
In the embodiment of the present invention, the first reference structure (e.g., the exposed first structure layer 21) is etched immediately, and the first photoresist layer 31 on the surface of the remaining first structure layer 21 is removed, so as to obtain the first nanostructure 211 and the alignment mark 212 (i.e., the remaining first structure layer 21) as shown in fig. 3.
Optionally, fabricating the alignment window 10 at a location of the second structural layer 22 corresponding to the alignment identification mark 212 may include the following step 1031.
Step 1031: a second photoresist layer 32 is coated on the surface of the second structural layer 22, and a window lithography operation is performed on the corresponding position of the alignment identification mark 212 based on a back side overlay process, so as to obtain an alignment window 10.
As shown in fig. 12, the second photoresist layer 32 may be coated on the surface of the second structural layer 22 by the same method as coating the first photoresist layer 31 on the surface of the first structural layer 22, for example, spin coating, and the material of the second photoresist layer 32 may be the same as that of the first photoresist layer 31; and, based on the conventional back surface alignment process, the alignment recognition mark 212 located on the first structural layer 21 and obtained in the above step 101 is recognized on the surface of the second photoresist layer 32 far from the second structural layer 22, and a window lithography operation is performed at the position of the surface of the second photoresist layer 32 far from the second structural layer 22 corresponding to the alignment recognition mark 212, where the window lithography operation is an operation process for obtaining the alignment window 10; after this window lithography operation, a structure as shown in fig. 7 can be obtained.
In the embodiment of the invention, the alignment window 10 obtained by adopting the traditional back alignment process has lower precision due to the micrometer-level precision of the corresponding alignment process, so the embodiment of the invention does not directly use the alignment window 10 as the alignment basis, but uses the alignment window 10 to lock the truly required alignment identification mark 212, and the alignment identification mark 212 corresponds to the micrometer-level precision and has higher precision.
Optionally, performing a window lithography operation on the corresponding location of the alignment identification mark 212 based on a backside overlay process to obtain the alignment window 10 may include the following steps A1-A2.
Step A1: window exposure and development are carried out on the second photoresist layer 32 at the corresponding position of the alignment identification mark 212, so as to obtain an alignment window structure; the alignment window structure is the second structural layer 22 exposed after window exposure and development.
The window exposure and development process performed in the embodiment of the present invention is the same as the principle of the exposure and development process performed on the first photoresist layer 31 in the step 1011, except that the structure layers targeted by the two processes are different from the obtained structure; window exposure and development are operations performed on the second photoresist layer 32 and are capable of obtaining an alignment window structure (see fig. 13) which is the second structural layer 22 to which the second photoresist layer 32 is dissolved, that is, the second structural layer 22 which is exposed without the second photoresist layer 32 on the surface, by dissolving the second photoresist layer 32 at a position corresponding to the alignment recognition mark 212, as shown in fig. 13, at the groove structure located above.
Step A2: the alignment window structure is etched to obtain an alignment window 10.
The etching process performed on the alignment window structure in the embodiment of the present invention is the same as the etching process performed on the first reference structure in step 1012, and the alignment window structure (e.g. the exposed second structure layer 22) is etched immediately, so as to obtain the alignment window 10 (i.e. the exposed substrate 1) as shown in fig. 14.
Optionally, as shown with reference to fig. 15, performing a second lithographic operation on the second structural layer 22 may include the following steps 1041-1042.
Step 1041: the second photoresist layer 32 is again exposed and developed to provide a second reference structure, which is the exposed second structural layer 22 after the exposure and development again.
On the basis of the structure shown in fig. 14, the remaining second photoresist layer 32 is subjected to secondary exposure and development, and the structure obtained by this exposure and development is a second reference structure, so as to obtain a finally required second nanostructure 221 through a subsequent etching process. The second reference structure is the second structural layer 22 corresponding to the second photoresist layer 32 that is dissolved out this time, in other words, the pair of second reference structures are groove structures that have no second photoresist layer 32 on the surface and are the second structural layer 22 that is exposed this time, as shown in fig. 16 and located at the uppermost layer.
Step 1042: and etching the second reference structure, and removing the residual second photoresist layer 32 to obtain a second nanostructure 221.
In the embodiment of the present invention, the second reference structure (e.g., the exposed second structure layer 22) is etched immediately, and the second photoresist layer 32 on the surface of the remaining second structure layer 22 is removed, so as to obtain the second nanostructure 221 (i.e., the remaining second structure layer 22 after this step) as shown in fig. 17.
Typically, after the first nanostructure 211 is processed, the operating surface needs to be replaced, for example, the operating surface is replaced from the first surface to a second surface where the second nanostructure 221 needs to be processed continuously; in the prior art, after the first nanostructure 211 on the first surface is processed, the first surface is absorbed by vacuum absorption, for example, the first surface with the first nanostructure 211 is absorbed on a workbench in vacuum, but due to the existence of the first nanostructure 211, the first surface has a gap, which can cause unstable vacuum absorption and cause the problem of vacuum leakage of the slide.
Optionally, the following steps B1-B2 may be performed before the step 103 "making the alignment window 10" at the position of the second structural layer 22 corresponding to the alignment identification mark 212, so as to avoid the problem of leaking vacuum from the slide.
Step B1: a temporary bonding glue is spin-coated on one side surface of the bonding substrate 4.
As shown in fig. 18, the bonded substrate 4 is essentially a substrate, which may be a silicon wafer; in the embodiment of the present invention, temporary bonding glue may be spin-coated on one side surface of the bonding substrate 4, to obtain a temporary bonding glue layer 5 as shown in fig. 18, where the material used for the temporary bonding glue may be a base resin.
Step B2: the first surface of the base 1 having the first nanostructures 211 is temporarily bonded to the bonding substrate 4 by means of a temporary bonding glue.
As shown in fig. 19, the first surface with the first nanostructure 211 may be attached to the temporary bonding glue layer 5 formed by temporary bonding glue, where the temporary bonding glue may fix the first surface with the first nanostructure 211 on the bonding substrate 4 by means of temporary bonding.
The first surface with the first nano structure 211 is fixed by temporarily bonding the first surface with the first nano structure 211 and the bonding substrate 4, so that the photoetching machine can directly process the second surface (the operation surface); in addition, the temporary bonding process can also protect the first nano structure 211, avoid the situation that the first nano structure 211 is stained and damaged, and solve the problem of vacuum leakage of the slide glass.
Optionally, the method may further comprise step C after obtaining the second nanostructures 221.
Step C: the first surface of the base 1 having the first nanostructure 211 is debonded from the bonding substrate 4, resulting in a double-sided superlens.
When the second nanostructure 221 on the second surface is also prepared, the first surface with the first nanostructure 211 and the bonding substrate 4 may be separated by heating or dissolving, so as to obtain the finished double-sided superlens.
Optionally, debonding the first surface of the base 1 having the first nanostructure 211 from the bonding substrate 4, comprising: dissolving temporary bonding glue; for example, a solvent capable of dissolving the temporary bonding glue may be used for debonding, thereby obtaining the finished double-sided superlens.
Optionally, a first structural layer 21 is provided on the first surface of the substrate 1, comprising: evaporating a first structural layer 21 on the first surface of the substrate 1; a second structural layer 22 is provided on the second surface of the substrate 1, comprising: a second structural layer 22 is deposited on the second surface of the substrate 1.
In the embodiment of the present invention, the first structural layer 21 and the second structural layer 22 may be correspondingly disposed on two side surfaces (such as the first surface and the second surface) of the substrate 1 by adopting an evaporation manner; optionally, the first structural layer 21 and the second structural layer 22 are both made of polysilicon. For example, the first structural layer 21 and the second structural layer 22 may be formed by vapor deposition of a polysilicon material, where the polysilicon material may include: titanium oxide, silicon nitride, fused silica, aluminum oxide, gallium nitride, gallium phosphide, amorphous silicon, crystalline silicon, hydrogenated amorphous silicon, or the like.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art can easily think about variations or alternatives within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (12)
1. A method of processing a double-sided superlens, comprising:
a first structural layer (21) is arranged on the first surface of the substrate (1), and a first photoetching operation is carried out on the first structural layer (21) to obtain a first nano structure (211) and an alignment identification mark (212); the substrate (1) is transparent in the working wave band of the photoetching machine detector;
-providing a second structural layer (22) on a second surface of the substrate (1);
manufacturing an alignment window (10) at a position of the second structural layer (22) corresponding to the alignment identification mark (212), wherein the size of the alignment window (10) is larger than that of the alignment identification mark (212);
performing alignment through the alignment window (10) and based on the alignment identification mark (212) and performing a second lithography operation on the second structure layer (22) with the second surface being an operation surface, resulting in a second nanostructure (221); the operating surface represents the surface of the substrate (1) currently being processed by a lithography machine.
2. Method according to claim 1, characterized in that said performing a first lithographic operation on said first structural layer (21) comprises:
coating a first photoresist layer (31) on the surface of the first structural layer (21), and exposing and developing the first photoresist layer (31) to obtain a first reference structure; the first reference structure is the first structure layer (21) exposed after the exposure and development;
and etching the first reference structure, and removing the residual first photoresist layer (31) to obtain the first nano structure (211) and the alignment identification mark (212).
3. The method according to claim 1, wherein said fabricating an alignment window (10) at a location of said second structural layer (22) corresponding to said alignment identification mark (212) comprises:
and coating a second photoresist layer (32) on the surface of the second structural layer (22), and performing window photoetching operation on the corresponding position of the alignment identification mark (212) based on a back surface alignment process to obtain the alignment window (10).
4. A method according to claim 3, wherein performing a window lithography operation on the alignment mark (212) at a location corresponding to the alignment mark based on a backside overlay process results in the alignment window (10), comprising:
window exposure and development are carried out on the second photoresist layer (32) at the corresponding position of the alignment identification mark (212) to obtain an alignment window structure; the alignment window structure is the second structure layer (22) exposed after exposure and development through the window;
and etching the alignment window structure to obtain the alignment window (10).
5. The method according to claim 4, wherein said performing a second lithographic operation on said second structural layer (22) comprises:
exposing and developing the second photoresist layer (32) again to obtain a second reference structure, wherein the second reference structure is the second structure layer (22) exposed after the exposure and development again;
and etching the second reference structure, and removing the residual second photoresist layer (32) to obtain the second nano structure (221).
6. The method according to claim 1, characterized in that before said making an alignment window (10) at a position of said second structural layer (22) corresponding to said alignment identification mark (212), it further comprises:
spin-coating temporary bonding glue on one side surface of the bonding substrate (4);
-temporarily bonding the substrate (1) with the first surface of the first nanostructure (211) with the bonding substrate (4) by means of the temporary bonding glue.
7. The method according to claim 6, further comprising, after said obtaining said second nanostructures (221):
the first surface with the first nano-structure (211) of the base (1) is bonded with the bonding substrate (4) Jie Jian, so that the double-sided superlens is obtained.
8. The method according to claim 7, wherein the bonding of the first surface with the first nanostructures (211) to the base (1) with the bonding substrate (4) Jie Jian comprises: and dissolving the temporary bonding glue.
9. The method according to any one of claims 1-8, wherein said providing a first structural layer (21) on the first surface of the substrate (1) comprises: evaporating the first structural layer (21) on the first surface of the substrate (1);
-said providing a second structural layer (22) on a second surface of said substrate (1), comprising: and evaporating the second structural layer (22) on the second surface of the substrate (1).
10. The method according to any one of claims 1 to 8, wherein the substrate (1) is a glass substrate.
11. The method of claim 10, wherein the glass substrate comprises: quartz wafer.
12. The method according to claim 11, wherein the first structural layer (21) and the second structural layer (22) are both polysilicon materials.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211123393.6A CN117742078A (en) | 2022-09-15 | 2022-09-15 | Processing method of double-sided superlens |
| PCT/CN2023/104802 WO2024055712A1 (en) | 2022-09-15 | 2023-06-30 | Double-sided superlens processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211123393.6A CN117742078A (en) | 2022-09-15 | 2022-09-15 | Processing method of double-sided superlens |
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| CN117742078A true CN117742078A (en) | 2024-03-22 |
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| CN202211123393.6A Pending CN117742078A (en) | 2022-09-15 | 2022-09-15 | Processing method of double-sided superlens |
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| WO (1) | WO2024055712A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1531366A3 (en) * | 2003-11-14 | 2009-05-13 | International Business Machines Corporation | Back to front alignment with latent imaging |
| CN106842815A (en) * | 2017-04-06 | 2017-06-13 | 中国科学院光电技术研究所 | A kind of method that double-sided alignment shaping naked eye three-dimensional shows thin-film device |
| CN112558437B (en) * | 2020-12-18 | 2023-03-31 | 中国科学院光电技术研究所 | Processing method of double-sided few-layer super-structured surface device |
| CN113608411A (en) * | 2021-07-29 | 2021-11-05 | 华天慧创科技（西安）有限公司 | Preparation method of double-sided graph of glass substrate |
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