CN117711991A - Wafer groove type cleaning equipment - Google Patents

Wafer groove type cleaning equipment Download PDF

Info

Publication number
CN117711991A
CN117711991A CN202410160296.7A CN202410160296A CN117711991A CN 117711991 A CN117711991 A CN 117711991A CN 202410160296 A CN202410160296 A CN 202410160296A CN 117711991 A CN117711991 A CN 117711991A
Authority
CN
China
Prior art keywords
cavity
cleaning
vibrator
wafer
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410160296.7A
Other languages
Chinese (zh)
Inventor
杨仕品
顾雪平
孙先淼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Zhicheng Semiconductor Technology Co ltd
Original Assignee
Suzhou Zhicheng Semiconductor Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Zhicheng Semiconductor Technology Co ltd filed Critical Suzhou Zhicheng Semiconductor Technology Co ltd
Priority to CN202410160296.7A priority Critical patent/CN117711991A/en
Publication of CN117711991A publication Critical patent/CN117711991A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention belongs to the technical field of wafer wet methods, in particular to wafer groove type cleaning equipment, which comprises a cleaning groove body and a vibrator cavity connected with the bottom of the cleaning groove body, wherein a separation plate is arranged in the cleaning groove body and divides the cleaning groove body into a cleaning cavity for storing cleaning liquid and a conducting cavity for storing pure water; the cleaning cavity is positioned above the isolation plate, and the conducting cavity is positioned below the isolation plate; at least 1 sound wave vibrator group is arranged in the vibrator cavity at intervals, the sound wave vibrator group comprises an ultrasonic vibrator and megasonic vibrators, and each sound wave vibrator group is electrically connected with a sound wave controller. The beneficial effects are that: simultaneously, an ultrasonic vibrator and a megasonic vibrator are arranged, and the cleaning efficiency is improved through the generated complex frequency sound wave. The conduction cavity is used for sound wave and heat propagation simultaneously, so that the volume of the equipment can be reduced, and the heating device is arranged in the conduction cavity, so that the service life of the heating device can be prolonged.

Description

Wafer groove type cleaning equipment
Technical Field
The invention relates to the technical field of wafer cleaning, in particular to wafer groove type cleaning equipment.
Background
Wafer cleaning is the most common process step in semiconductor manufacturing process Cheng Chong, mainly by cleaning the wafer surface with a tank or a single wafer to remove electrostatically adsorbed fine particles and other chemicals remaining in the semiconductor manufacturing process. The tank type wafer cleaning equipment often needs to heat the cleaning liquid to realize good cleaning effect when cleaning the wafer, and the heating mode of the tank type cleaning equipment in the past is to directly stretch into the chemical liquid with heating device to heat, and this kind of mode has following defect:
1. the uneven heating results in different temperatures of cleaning liquid near different wafers, which affects the stability of the cleaning effect.
2. The cleaning liquid can corrode the heating device, seriously affects the service life of the heating device, and causes the increase of production cost.
In addition, tank cleaning devices are often combined with ultrasonic, megasonic generators, the principle of which is the flow of sound waves and cavitation produced by ultrasonic and megasonic generators. The sound wave flow directly resonates with fine particles on the surface of the wafer so as to remove the fine particles; the cavitation principle is that the sound wave generator generates tiny bubbles, the bubbles float upwards, and the bubbles are continuously expanded and closed under the action of a sound field, so that impact and vibration are generated on the surface of a wafer, and pollutants on the surface are removed. The ultrasonic wave generator and the megasonic generator generate different frequencies of sound waves, when the ultrasonic wave generator and the megasonic generator are used for cleaning particles on the surface of the wafer, when the frequency of the sound waves is lower, the size of bubbles is larger and the density is lower, and when the frequency is larger, the size of the bubbles is reduced and the density is increased. The larger the bubble size, the larger the impact force generated during collapse, the stronger the ability to remove particles, but the larger the damage to the wafer surface.
The conventional tank type cleaning machine usually only comprises an ultrasonic generator or a megasonic generator, and the particle diameter adsorbed on the surface of the wafer can be large or small, so that a single generator cannot effectively remove particles with different diameters, and even if the tank type cleaning machine is subjected to ultrasonic cleaning and megasonic cleaning, the particles with all diameters cannot be cleaned, therefore, a method capable of realizing continuous sonic frequency needs to be found.
In view of the foregoing, there is an urgent need to provide a new wafer tank cleaning apparatus to solve the above-mentioned problems.
Disclosure of Invention
Based on the prior art, the invention provides wafer groove type cleaning equipment.
The invention provides wafer groove type cleaning equipment which comprises a cleaning groove body and a vibrator cavity connected with the bottom of the cleaning groove body, wherein a separation plate is arranged in the cleaning groove body and divides the cleaning groove body into a cleaning cavity for storing cleaning liquid and a conducting cavity for storing pure water; the cleaning cavity is positioned above the isolation plate, and the conducting cavity is positioned below the isolation plate; at least 1 sound wave vibrator group is arranged in the vibrator cavity at intervals, the sound wave vibrator group comprises an ultrasonic vibrator and megasonic vibrators, and each sound wave vibrator group is electrically connected with a sound wave controller.
Preferably, the isolation plate is provided with at least 4 positioning columns for positioning the wafer basket.
Preferably, the volume of the cleaning chamber is greater than the volume of the conducting chamber.
Preferably, the wafer tank cleaning apparatus further comprises:
at least 2 first liquid inlet pipes connected with the cleaning cavity and used for introducing different cleaning liquids or pure water into the cleaning cavity;
and the first liquid outlet is connected with the cleaning cavity and is used for discharging the polluted mixed cleaning liquid.
Preferably, the wafer tank cleaning apparatus further comprises:
the second liquid inlet pipe is connected with the conducting cavity and is used for introducing pure water into the conducting cavity, and the pure water is used for conducting heat and sound waves at the same time;
and the second liquid outlet pipe is connected with the conducting cavity and is used for discharging pure water in the conducting cavity.
Preferably, at least 1 heating device is arranged inside the conduction cavity and is used for heating pure water in the conduction cavity and keeping the temperature, and the heating device is configured as a heating rod.
Preferably, a mounting plate is arranged below the vibrator cavity, a through hole is formed in the bottom cavity wall of the vibrator cavity, a notch is formed in the position, corresponding to the through hole, of the mounting plate, and the second liquid outlet pipe passes through the vibrator cavity and extends out of the through hole.
Preferably, the ultrasonic vibrator and the megasonic vibrator penetrate through the bottom cavity wall of the conducting cavity so as to protrude into the conducting cavity, and the ultrasonic vibrator and the megasonic vibrator are arranged in a sealing way with the bottom cavity wall of the conducting cavity;
the vibrator cavity is also provided with at least 1 air port for balancing the air pressure in the vibrator cavity.
Preferably, the acoustic wave controller is configured as a phase adjuster to periodically change the phases of the acoustic wave emitted from the ultrasonic vibrator and the megasonic vibrator.
Preferably, the two sides of the cleaning tank body are provided with mounting frames, and the mounting frames are used for mounting the cleaning tank body on the equipment main body.
The beneficial effects of the invention are as follows:
1. the oscillator cavity is arranged, a plurality of groups of oscillator groups are arranged in the oscillator cavity, the phase of the sound wave is regulated through the sound wave controller, the sound wave complex frequency can be realized, and the better cleaning effect than the conventional groove type cleaning machine with the single-frequency ultrasonic generator or the megasonic generator is realized through the sound wave flow and cavitation generated by the sound wave.
2. The conduction cavity is arranged, the heating device of the groove type cleaning machine and the cavity for transmitting the megasonic waves of the megasonic vibrator are combined into one, and the volume and the production cost of the groove type cleaning machine are greatly saved.
3. The heating device is arranged in the conduction cavity, and heat conduction is carried out through pure water, so that not only can uniformity of heating heat distribution be realized, but also the problem that the heating device is directly contacted with cleaning liquid to cause corrosion of the heating device is avoided.
Drawings
FIG. 1 is a schematic diagram of a wafer tank cleaning apparatus;
FIG. 2 is a front view of a wafer tank cleaning apparatus;
FIG. 3 is a front cross-sectional view of a wafer tank cleaning apparatus;
FIG. 4 is a cross-sectional view of a conductive chamber of a wafer tank cleaning apparatus;
FIG. 5 is a diagram showing the vibrator installation of a wafer tank cleaning apparatus;
FIG. 6 is a bottom view of a wafer tank cleaning apparatus;
in the figure: 1. a cleaning tank body; 2. a vibrator cavity; 3. a mounting frame; 4. a mounting plate; 11. cleaning the cavity; 12. a conductive cavity; 13. a partition plate; 21. a vibrator group; 22. an air port; 23. a via hole; 41. a notch portion; 111. a first liquid inlet pipe; 112. a first liquid outlet; 121. a second liquid inlet pipe; 122. a second liquid outlet pipe; 123. a heating device; 131. and positioning columns.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described in the following description with reference to the drawings in the embodiments of the present invention, but it should be noted that these embodiments are not limiting to the present invention, and functional, method, or structural equivalent changes or substitutions made by those skilled in the art according to these embodiments are included in the scope of the present invention.
It should be understood that the terms "center", "longitudinal", "transverse", "vertical", "horizontal", "axial", "radial", "above", "below", etc. indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, and are merely for convenience of description of the present technical solution and simplification of description. In particular, the term "upper" refers to the direction in which the wafer cleaning tank body is open, and the term "lower" refers to the direction opposite thereto.
Referring to fig. 1 to 6, the present embodiment discloses a specific implementation manner of a wafer tank type cleaning apparatus, which includes a cleaning tank 1 and a vibrator cavity 2 connected to the bottom of the cleaning tank 1, wherein a partition plate 13 is disposed in the cleaning tank 1, and the partition plate 13 divides the cleaning tank 1 into a cleaning cavity 11 for storing cleaning liquid and a conducting cavity 12 for storing pure water; the cleaning cavity 12 is positioned above the isolation plate 13, and the conducting cavity 12 is positioned below the isolation plate 13; at least 1 acoustic wave vibrator group 21 is arranged in the vibrator cavity 2 at intervals, the acoustic wave vibrator group 21 comprises ultrasonic vibrators and megasonic vibrators, and each acoustic wave vibrator group 21 is electrically connected with an acoustic wave controller (not shown in the figure).
The traditional groove type cleaning machine only comprises an ultrasonic vibrator or a megasonic vibrator, and the main reason is that the ultrasonic vibrator is different from the megasonic vibrator in the working environment of the wafer cleaning equipment, and the ultrasonic vibrator is directly arranged at the bottom or the side wall of the cleaning groove body and directly works; in order to achieve better cleaning effect, wafer tank type cleaning equipment using megasonic vibrators is generally provided with a conducting cavity, the conducting cavity is filled with pure water, and the megasonic vibrators work in the conducting cavity. The working frequency of the ultrasonic vibrator is generally 15-200 kHz, tiny bubbles are mainly generated by utilizing the cavitation effect of liquid, the bubbles are exploded near the surface of the wafer after floating upwards, dirt and particles on the surface of the wafer are taken away by energy generated by the explosion, and the particles with the diameter larger than 0.4 mu m on the surface of the wafer can be effectively cleaned. The working frequency of the megasonic vibrator is generally 800-1000kHz, and high-speed micro water flow formed in the cleaning liquid by utilizing high-frequency sonic energy continuously impacts the surface of the wafer, so that particles with the diameter smaller than 0.2 mu m on the surface of the wafer can be effectively cleaned. In the actual production process, the diameter of particles adsorbed on the surface of the wafer may be large or small, and the wafer cleaning equipment provided with the single-frequency sonic vibrator cannot effectively remove the particles with different diameters.
The ultrasonic vibrator and the megasonic vibrator penetrate through the bottom cavity wall of the conducting cavity 2 so as to protrude into the conducting cavity 2, and the ultrasonic vibrator and the megasonic vibrator are arranged in a sealing way with the bottom cavity wall of the conducting cavity 2; in this embodiment, the operating frequency of the selected ultrasonic transducer is 40-200kHz and the operating frequency of the selected megasonic transducer is 800-1000kHz. Further, each of the acoustic wave vibrator groups 21 is electrically connected to an acoustic wave controller, and the acoustic wave controller is configured as a phase regulator, and the phase regulator periodically changes the phases of the acoustic waves emitted by the ultrasonic vibrator and the megasonic vibrator, so as to regulate the distribution of the frequency time domain and the space of the acoustic wave, and better generate cavitation and controllable acoustic wave flow after passing through the conducting cavity 2, so as to better clean particles with various diameters on the surface of the wafer.
Still further, the oscillator chamber 2 is further provided with at least 1 air port 22 for balancing the air pressure in the oscillator chamber, and as the oscillator generates a large amount of heat during operation, the air in the oscillator chamber 2 is continuously heated to increase the air pressure in the oscillator chamber 2, if the air does not circulate, the heat cannot be timely discharged, the continuously generated heat and the increased air pressure can affect the working state of the oscillator, and the service life of the oscillator is seriously possibly reduced or even damaged. After the air port 22 is added, the internal and external air pressure of the vibrator cavity 2 can be kept balanced, and the circulated air can timely take away heat, so that the running stability of the vibrator is ensured, and the service life of the vibrator can be effectively prolonged.
At least 4 positioning columns 131 are arranged on the isolation plate 13, and after the basket filled with wafers is sent into the cleaning tank body 1 by an external carrying device, the basket needs to be positioned. The positioning columns 131 matched with the flower basket are arranged, so that an external carrying device, such as a manipulator, is assisted to position, and is convenient to take and place, and in addition, stability of the wafer can be kept in the cleaning process.
The wafer tank type cleaning apparatus further comprises at least 2 first liquid inlet pipes 111, and the first liquid inlet pipes 111 are connected with the cleaning cavity 11. In semiconductor manufacturing processes, the recipe of the cleaning liquid used by the trench cleaning apparatus may be different for different processes, for example, using the trench cleaning apparatus after the polishing process, the main contaminant is silicon-containing particles; the main pollutants of the tank type cleaning equipment used in the photoresist stripping process are mainly colloid to be removed, other chemical liquid residues and particulate matters. For different processes, different cleaning solutions are needed, and for this purpose, the wafer tank type cleaning device provided by the invention has at least 2 first liquid inlet pipes 111, and different chemical solutions and pure water can be introduced to form cleaning solutions with a predetermined ratio for different cleaning processes. A first liquid outlet 112 is also provided near the bottom wall of the cleaning chamber 11 for discharging the contaminated mixed cleaning liquid.
The wafer tank type cleaning device further comprises a second liquid inlet pipe 121 and a second liquid outlet pipe 122, wherein the second liquid inlet pipe 121 is connected with the conducting cavity 12 and used for introducing pure water into the conducting cavity 12, and the second liquid outlet pipe 122 is connected with the bottom cavity wall of the conducting cavity 12 and used for discharging the pure water in the conducting cavity 12. At least 1 heating device 123 is further disposed inside the conducting chamber 12, and the heating device 123 is configured as a heating rod for heating the pure water in the conducting chamber 12 and maintaining the temperature.
In the wafer tank cleaning device, the cleaning liquid often needs a certain temperature to promote chemical reaction, so that the cleaning efficiency of the wafer is improved. Therefore, in the process of cleaning the wafer, the chemical liquid needs to be heated and insulated, the heating device is directly stretched into the cleaning liquid to be heated and insulated in the traditional method, and the cleaning liquid is generally corrosive, so that the service life of the heating device is always influenced. Furthermore, the heating mode can also cause uneven temperature distribution in the cleaning tank, and obviously, in the heating mode, the heat source is only the heating device, so that the temperature of the part of the cleaning liquid close to the heating device is relatively higher, and the temperature of the part of the cleaning liquid far from the heating device is relatively lower, and therefore, the wafer cleaning effect is inevitably uneven.
In the wafer tank cleaning apparatus of the present invention, pure water in the conducting cavity 12 serves as a heat conducting carrier, the heating device 123 extends into the conducting cavity 12 to heat the pure water, and when the temperature of the pure water exceeds the temperature of the cleaning solution, the heat conducting process starts, which has the following advantages:
1. the heating device 123 does not contact with cleaning liquid, only contacts with pure water, and cannot be corroded, so that the service life of the heating device 123 can be greatly prolonged.
2. The heating process is relatively mild, the uniformity of heat conduction is better, and the effect of cleaning the wafer is better.
It can be seen from the above description that the pure water in the conducting cavity 12 is used for conducting heat and sound waves at the same time, so that the heating component and the sound wave conducting component in the conventional wafer tank type cleaning device are combined into one, the modularity is realized, and the transverse space occupied by the cleaning tank body can be greatly reduced.
Further, the two sides of the cleaning tank body 1 are provided with mounting frames 3, the lower part of the vibrator cavity 2 is provided with mounting plates 4, and the mounting frames 3 and the mounting plates 4 are used for mounting the cleaning tank body 1 and the vibrator cavity 2 on the equipment main body. The bottom wall of the vibrator cavity 2 is provided with a via hole 23, a notch 41 is arranged at a position of the mounting plate 4 corresponding to the via hole 23, and the second liquid outlet pipe 122 passes through the vibrator cavity 2 and extends out of the via hole 33.
The process flow of the wafer groove type cleaning equipment provided by the invention is as follows:
the first liquid inlet pipe is used for injecting different cleaning liquid or pure water into the cleaning cavity according to a preset proportion;
then, injecting pure water into the conducting cavity through the second liquid inlet until the conducting cavity is filled;
after the conduction cavity is filled with pure water, the heating device heats the pure water, and the cleaning liquid in the cleaning cavity is indirectly heated to a preset temperature through heat conduction;
after the cleaning solution is heated to a preset temperature, the external carrying device puts the basket loaded with the groups of wafers to be cleaned into the cleaning solution for guessing and immersing the basket into the cleaning solution;
after the flower basket is positioned, closing the opening of the cleaning tank body 1, starting the operation of the acoustic wave vibrator group, and periodically adjusting the phases of the acoustic wave sent out by the ultrasonic wave vibrator and the megasonic wave vibrator through an acoustic wave controller;
after the cleaning is completed, the external carrying device sends out the cleaned wafer and carries out a drying process.
In summary, the present invention provides a wafer tank type cleaning apparatus, which includes a cleaning tank body and a vibrator cavity connected to the bottom of the cleaning tank body, wherein a partition board is disposed in the cleaning tank body, and the partition board partitions the cleaning tank body into a cleaning cavity for storing cleaning liquid and a conducting cavity for storing pure water; the cleaning cavity is positioned above the isolation plate, and the conducting cavity is positioned below the isolation plate; at least 1 sound wave vibrator group is arranged in the vibrator cavity at intervals, the sound wave vibrator group comprises an ultrasonic vibrator and megasonic vibrators, and each sound wave vibrator group is electrically connected with a sound wave controller. The beneficial effects are that: simultaneously, an ultrasonic vibrator and a megasonic vibrator are arranged, and the cleaning efficiency is improved through the generated complex frequency sound wave. The conduction cavity is used for sound wave and heat propagation simultaneously, so that the volume of the equipment can be reduced, and the heating device is arranged in the conduction cavity, so that the service life of the heating device can be prolonged.
The present invention is not limited to the above-mentioned embodiments, and any person skilled in the art, based on the technical solution of the present invention and the inventive concept thereof, can be replaced or changed within the scope of the present invention.

Claims (8)

1. The wafer groove type cleaning equipment comprises a cleaning groove body and a vibrator cavity connected with the bottom of the cleaning groove body, and is characterized in that a separation plate is arranged in the cleaning groove body and divides the cleaning groove body into a cleaning cavity for storing cleaning liquid and a conducting cavity for storing pure water; the cleaning cavity is positioned above the isolation plate, and the conducting cavity is positioned below the isolation plate; at least 1 sound wave vibrator group is arranged in the vibrator cavity at intervals, the sound wave vibrator group comprises an ultrasonic vibrator and a megasound wave vibrator, and each sound wave vibrator group is electrically connected with a sound wave controller;
further comprises:
at least 2 first liquid inlet pipes connected with the cleaning cavity and used for introducing different cleaning liquids or pure water into the cleaning cavity;
the first liquid outlet is connected with the cleaning cavity and used for discharging the polluted mixed cleaning liquid;
the second liquid inlet pipe is connected with the conducting cavity and is used for introducing pure water into the conducting cavity, and the pure water is used for conducting heat and sound waves at the same time;
and the second liquid outlet pipe is connected with the conducting cavity and is used for discharging pure water in the conducting cavity.
2. A wafer tank cleaning apparatus according to claim 1, characterized in that: and the isolation plate is provided with at least 4 positioning columns for positioning the wafer flower basket.
3. A wafer tank cleaning apparatus according to claim 1, characterized in that: the volume of the cleaning cavity is larger than the volume of the conducting cavity.
4. A wafer tank cleaning apparatus according to claim 1, characterized in that: at least 1 heating device is arranged in the conduction cavity and used for heating pure water in the conduction cavity and keeping the temperature, and the heating device is configured as a heating rod.
5. A wafer tank cleaning apparatus according to claim 1, characterized in that: the oscillator comprises a vibrator cavity, and is characterized in that a mounting plate is arranged below the vibrator cavity, a through hole is formed in the bottom cavity wall of the vibrator cavity, a notch is formed in the position, corresponding to the through hole, of the mounting plate, and a second liquid outlet pipe passes through the vibrator cavity and extends out of the through hole.
6. A wafer tank cleaning apparatus according to claim 1, characterized in that:
the ultrasonic vibrator and the megasonic vibrator penetrate through the bottom cavity wall of the conducting cavity so as to protrude into the conducting cavity, and the ultrasonic vibrator and the megasonic vibrator are arranged in a sealing way with the bottom cavity wall of the conducting cavity;
the vibrator cavity is also provided with at least 1 air port for balancing the air pressure in the vibrator cavity.
7. A wafer tank cleaning apparatus according to claim 1, characterized in that: the acoustic wave controller is configured as a phase adjuster to periodically change the phases of the ultrasonic vibrator and the sound wave emitted from the megasonic vibrator.
8. A wafer tank cleaning apparatus according to claim 1, characterized in that: the washing tank body both sides are equipped with the mounting bracket, the mounting bracket is used for with the washing tank body is installed on the equipment main part.
CN202410160296.7A 2024-02-05 2024-02-05 Wafer groove type cleaning equipment Pending CN117711991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410160296.7A CN117711991A (en) 2024-02-05 2024-02-05 Wafer groove type cleaning equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410160296.7A CN117711991A (en) 2024-02-05 2024-02-05 Wafer groove type cleaning equipment

Publications (1)

Publication Number Publication Date
CN117711991A true CN117711991A (en) 2024-03-15

Family

ID=90146561

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410160296.7A Pending CN117711991A (en) 2024-02-05 2024-02-05 Wafer groove type cleaning equipment

Country Status (1)

Country Link
CN (1) CN117711991A (en)

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03230526A (en) * 1990-02-06 1991-10-14 Fujitsu Ltd Cleaning method of wafer
JPH05102119A (en) * 1991-10-09 1993-04-23 Mitsubishi Electric Corp Apparatus and method for cleaning
DE4209865A1 (en) * 1992-03-26 1993-09-30 Wacker Chemitronic Removal of metal residues from semiconductor surfaces - using aq. cleaning compsn. treated with carbon di:oxide and/or oxalic acid
EP0624405A1 (en) * 1993-04-12 1994-11-17 Hughes Aircraft Company Megasonic cleaning system using compressed, condensed gases
JPH07328573A (en) * 1994-06-09 1995-12-19 Supiide Fuamu Clean Syst Kk Washing method and apparatus
US5698040A (en) * 1994-07-01 1997-12-16 Texas Instruments Incorporated Method for rotational wafer cleaning in solution
JPH10135176A (en) * 1996-09-04 1998-05-22 Tokyo Electron Ltd Ultrasonic cleaning apparatus
JPH10163158A (en) * 1996-12-03 1998-06-19 Dan Kagaku:Kk Cleaning apparatus for sheetlike body
JPH11204477A (en) * 1998-01-16 1999-07-30 Tokyo Electron Ltd Ultrasonic cleaning device
JP2001284318A (en) * 2000-04-03 2001-10-12 Mitsubishi Electric Corp Method of manufacturing semiconductor device
JP2002177906A (en) * 2000-12-15 2002-06-25 Kaijo Corp Ultrasonic cleaning machine
JP2007149989A (en) * 2005-11-28 2007-06-14 Sharp Corp Device and method for washing substrate
WO2009003343A1 (en) * 2007-07-05 2009-01-08 Acm Research (Shanghai) Inc. Methods and apparatus for cleaning semiconductor wafers
CN102496590A (en) * 2011-12-22 2012-06-13 浙江金瑞泓科技股份有限公司 Isopropyl alcohol dryer with ultrasonic or megasonic vibrators
CN105195465A (en) * 2015-09-21 2015-12-30 同济大学 Fully-automatic optical element cleaning device with ultrasonic-megasonic composite frequency
CN105817447A (en) * 2016-05-11 2016-08-03 江苏峰谷源储能技术研究院有限公司 Silicon wafer washer for processing of solar panel
CN207966925U (en) * 2018-03-30 2018-10-12 上海思恩装备科技有限公司 A kind of cleaning device of semiconductor devices
CN111701947A (en) * 2020-07-23 2020-09-25 安徽富乐德科技发展股份有限公司 Ultrasonic and megasonic cleaning system for semiconductor silicon wafer
CN115228835A (en) * 2022-06-30 2022-10-25 上海图灵智算量子科技有限公司 Wafer cleaning method
TW202308793A (en) * 2021-08-18 2023-03-01 美商應用材料股份有限公司 Point-of-use ultrasonic homogenizer for cmp slurry agglomeration reduction
CN115742565A (en) * 2021-09-03 2023-03-07 细美事有限公司 Substrate processing apparatus and processing method

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03230526A (en) * 1990-02-06 1991-10-14 Fujitsu Ltd Cleaning method of wafer
JPH05102119A (en) * 1991-10-09 1993-04-23 Mitsubishi Electric Corp Apparatus and method for cleaning
DE4209865A1 (en) * 1992-03-26 1993-09-30 Wacker Chemitronic Removal of metal residues from semiconductor surfaces - using aq. cleaning compsn. treated with carbon di:oxide and/or oxalic acid
EP0624405A1 (en) * 1993-04-12 1994-11-17 Hughes Aircraft Company Megasonic cleaning system using compressed, condensed gases
JPH07328573A (en) * 1994-06-09 1995-12-19 Supiide Fuamu Clean Syst Kk Washing method and apparatus
US5698040A (en) * 1994-07-01 1997-12-16 Texas Instruments Incorporated Method for rotational wafer cleaning in solution
JPH10135176A (en) * 1996-09-04 1998-05-22 Tokyo Electron Ltd Ultrasonic cleaning apparatus
JPH10163158A (en) * 1996-12-03 1998-06-19 Dan Kagaku:Kk Cleaning apparatus for sheetlike body
JPH11204477A (en) * 1998-01-16 1999-07-30 Tokyo Electron Ltd Ultrasonic cleaning device
JP2001284318A (en) * 2000-04-03 2001-10-12 Mitsubishi Electric Corp Method of manufacturing semiconductor device
JP2002177906A (en) * 2000-12-15 2002-06-25 Kaijo Corp Ultrasonic cleaning machine
JP2007149989A (en) * 2005-11-28 2007-06-14 Sharp Corp Device and method for washing substrate
WO2009003343A1 (en) * 2007-07-05 2009-01-08 Acm Research (Shanghai) Inc. Methods and apparatus for cleaning semiconductor wafers
CN102496590A (en) * 2011-12-22 2012-06-13 浙江金瑞泓科技股份有限公司 Isopropyl alcohol dryer with ultrasonic or megasonic vibrators
CN105195465A (en) * 2015-09-21 2015-12-30 同济大学 Fully-automatic optical element cleaning device with ultrasonic-megasonic composite frequency
CN105817447A (en) * 2016-05-11 2016-08-03 江苏峰谷源储能技术研究院有限公司 Silicon wafer washer for processing of solar panel
CN207966925U (en) * 2018-03-30 2018-10-12 上海思恩装备科技有限公司 A kind of cleaning device of semiconductor devices
CN111701947A (en) * 2020-07-23 2020-09-25 安徽富乐德科技发展股份有限公司 Ultrasonic and megasonic cleaning system for semiconductor silicon wafer
TW202308793A (en) * 2021-08-18 2023-03-01 美商應用材料股份有限公司 Point-of-use ultrasonic homogenizer for cmp slurry agglomeration reduction
CN115742565A (en) * 2021-09-03 2023-03-07 细美事有限公司 Substrate processing apparatus and processing method
CN115228835A (en) * 2022-06-30 2022-10-25 上海图灵智算量子科技有限公司 Wafer cleaning method

Similar Documents

Publication Publication Date Title
US7033068B2 (en) Substrate processing apparatus for processing substrates using dense phase gas and sonic waves
US9044794B2 (en) Ultrasonic cleaning fluid, method and apparatus
KR101571685B1 (en) Ultrasonic washing apparatus, and ultrasonic washing method
KR20090101242A (en) Megasonic precision cleaning of semiconductor process equipment components and parts
US20040025911A1 (en) Apparatus for cleaning a semiconductor substrate by vibrating cleaning solution supplied onto the substrate
JP2002093765A (en) Method and equipment for cleaning substrate
JPH0855827A (en) Wafer cassette and cleaning equipment using it
CN117711991A (en) Wafer groove type cleaning equipment
JP4248257B2 (en) Ultrasonic cleaning equipment
JP4623706B2 (en) Ultrasonic cleaning equipment
KR100598112B1 (en) Megasonic cleaner having double cleaning probe and cleaning method
CN115228835A (en) Wafer cleaning method
JPH049670A (en) Analyzing apparatus
KR100694798B1 (en) Method for cleaning the subsrtrate
CN115254781A (en) Megasonic cleaning device for semiconductor wafer capable of avoiding surface damage
KR100242942B1 (en) Washing apparatus for using a multi-oscillation ultrasonic wave
JP2001077070A (en) Megasonic cleaning device
KR20020051405A (en) Method of cleaning wafer
KR20100034091A (en) Wafer cleaning apparatus and method using megasonic
CN115228836A (en) Wafer cleaning device
KR20070073311A (en) Apparatus and method for cleaning wafers using megasonic energy
US11433436B2 (en) Carousel for ultrasonic cleaning and method of using thereof
CN217411716U (en) Multi-frequency vacuum cleaning machine
KR20100042015A (en) The apparatus and method of single wafer cleaning
KR100741029B1 (en) A megasonic energy generating apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination