CN117539103A - Display panel - Google Patents
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- CN117539103A CN117539103A CN202311580209.5A CN202311580209A CN117539103A CN 117539103 A CN117539103 A CN 117539103A CN 202311580209 A CN202311580209 A CN 202311580209A CN 117539103 A CN117539103 A CN 117539103A
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- Prior art keywords
- black
- display panel
- substrate
- array substrate
- retaining wall
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- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 15
- 230000031700 light absorption Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000004925 Acrylic resin Substances 0.000 claims description 8
- 229920000178 Acrylic resin Polymers 0.000 claims description 8
- 239000004814 polyurethane Substances 0.000 claims description 7
- 229920002635 polyurethane Polymers 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 32
- 239000003292 glue Substances 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/1679—Gaskets; Spacers; Sealing of cells; Filling or closing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/1677—Structural association of cells with optical devices, e.g. reflectors or illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1685—Operation of cells; Circuit arrangements affecting the entire cell
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention relates to a display panel. The display panel of the present invention includes: array substrate, black barricade, electronic ink and color film substrate. According to the invention, the black retaining wall is arranged at the position, corresponding to the thin film transistor device, on the array substrate, and the black retaining wall is utilized to absorb external environment light, so that the probability that the external environment light irradiates to a metal layer in the thin film transistor device to be reflected is reduced, and therefore, the probability that the display panel is subjected to light leakage and cross color under the black state can be reduced, and the contrast ratio of the display panel is further improved. According to the invention, the light absorption units are arranged between at least two adjacent black retaining walls, so that the external environment light is further absorbed, the probability that the external environment light irradiates to a metal layer in the thin film transistor device to be reflected is reduced, the probability that the display panel is subjected to light leakage and cross color under a black state can be reduced, and the contrast ratio of the display panel is further improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel.
Background
An electronic Paper (E-Paper for short) is a novel display material, and a bistable display technology based on an electrophoresis principle is wide in application, has excellent performances of ultralow energy consumption, thinness like Paper, bending, book-like definition and the like, and displays characters and pictures through black and white and light changes of colors, and has a display effect very similar to that of a real Paper book.
At present, the electronic paper display screen is widely applied to the fields of electronic readers (electronic books), electronic price tags, smart cards, watches, mobile phones, industrial instruments, meters, dynamic display advertising boards, media products and the like. Electrophoretic display technology is one of the electronic display technologies with development potential due to the combination of the advantages of plain paper and electronic displays. The micro structure can not be seen from the front of the plasma display technology, so that the number of layers is reduced, and the display effect with high definition and high resolution is obtained.
Because the electronic paper is a reflective display, the brightness of the display increases with the increase of the external environment light, and the display effect is easily affected by the external environment light although the energy consumption is saved. At present, when the external environment light is strong, the pixels in the low gray scale area reflect the strong environment light, so that the corresponding low gray scale cannot be displayed, the image contrast is reduced, the blurring is unclear, and the like, and the display effect is greatly influenced.
Disclosure of Invention
The invention aims to provide a display panel which can solve the problems that in the prior art, when external ambient light is strong, pixels in a low gray level area reflect strong ambient light, so that corresponding low gray level cannot be displayed, the image contrast is reduced, the blurring is unclear and the like.
In order to solve the above-described problems, the present invention provides a display panel including: an array substrate including a first substrate, a plurality of thin film transistor devices disposed on the first substrate at intervals, and a plurality of pixel electrodes electrically connected to the thin film transistor devices in one-to-one correspondence; the black retaining walls are arranged on one side, away from the first substrate, of the thin film transistor device in a one-to-one correspondence mode, and two adjacent black retaining walls and the pixel electrode form a containing cavity; electronic ink filled in the accommodating cavity; and the color film substrate is arranged opposite to the array substrate and is connected to the surface of one side of the black retaining wall, which is far away from the array substrate.
Further, the display panel further includes: the light absorption unit is connected between at least two adjacent black retaining walls and is positioned on the surface of one side of the array substrate, which is close to the color film substrate.
Further, the thin film transistor device comprises a gate electrode and a source electrode; the orthographic projections of the grid electrode and the source electrode on the first substrate fall into orthographic projections of the black retaining wall on the first substrate.
Further, the black retaining wall has a proximal end close to the array substrate and a distal end far away from the array substrate, the array substrate has a thickness direction, and a dimension of the proximal end in a direction perpendicular to the thickness direction is larger than a dimension of the distal end in a direction perpendicular to the thickness direction.
Further, the dimension of the black retaining wall in the direction perpendicular to the thickness direction is gradually reduced from the proximal end to the distal end.
Further, the distal end has a dimension in a direction perpendicular to the thickness direction in a range of 4 μm to 8 μm, and the proximal end has a dimension in a direction perpendicular to the thickness direction in a range of 8 μm to 12 μm. Further, the height of the black retaining wall is in the range of 3-20 μm.
Further, the black retaining wall comprises: black acrylic resin, black epoxy resin, black polyurethane and black silica gel.
Further, the materials of the light absorbing unit include: black acrylic resin, black epoxy resin, black polyurethane and black silica gel.
Further, the material of the light absorbing unit is the same as that of the black retaining wall.
The invention has the advantages that: according to the invention, the black retaining wall is arranged at the position, corresponding to the thin film transistor device, on the array substrate, and the black retaining wall is utilized to absorb external environment light, so that the probability that the external environment light irradiates to a metal layer in the thin film transistor device to be reflected is reduced, and therefore, the probability that the display panel is subjected to light leakage and cross color under the black state can be reduced, and the contrast ratio of the display panel is further improved.
According to the invention, the light absorption units are arranged between at least two adjacent black retaining walls, so that the external environment light is further absorbed, the probability that the external environment light irradiates to a metal layer in the thin film transistor device to be reflected is reduced, the probability that the display panel is subjected to light leakage and cross color under a black state can be reduced, and the contrast ratio of the display panel is further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a display panel according to embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a display panel according to embodiment 2 of the present invention.
Reference numerals illustrate:
100. a display panel;
1. an array substrate; 2. A color film substrate;
3. black retaining wall; 4. Electronic ink;
5. frame glue; 6. A receiving chamber;
7. a light absorbing unit;
11. a first substrate; 12. A thin film transistor device;
13. a pixel electrode; 14. A passivation layer;
121. an active layer; 122. A gate insulating layer;
123. a gate; 124. interlayer insulating layer
125. A source electrode; 126. A drain electrode;
1211. a channel portion; 1212. A conductive portion;
21. a second substrate; 22. A color filter unit;
23. a common electrode;
221. a red filter unit; 222. A green filter unit;
223. and a blue filter unit.
Detailed Description
The following detailed description of the preferred embodiments of the invention, taken in conjunction with the accompanying drawings, is provided to fully convey the substance of the invention to those skilled in the art, and to illustrate the invention to practice it, so that the technical disclosure of the invention will be made more clear to those skilled in the art to understand how to practice the invention more easily. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather should be construed as limited to the set forth herein.
The directional terms used herein, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are used for explaining and describing the present invention only in terms of the directions of the drawings and are not intended to limit the scope of the present invention.
In the drawings, like structural elements are referred to by like reference numerals and components having similar structure or function are referred to by like reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of understanding and description, and the present invention is not limited to the size and thickness of each component.
Example 1
As shown in fig. 1, the present embodiment provides a display panel 100. The display panel 100 includes: the color film comprises an array substrate 1, a color film substrate 2, black retaining walls 3, electronic ink 4 and frame glue 5.
Wherein, the array substrate 1 includes: a first substrate 11, a plurality of thin film transistor devices 12, and a plurality of pixel electrodes 13.
The material of the first substrate 11 includes glass, polyimide, polycarbonate, polyethylene terephthalate, polyethylene naphthalate, and the like. In this embodiment, the material of the first substrate 11 is glass.
Wherein the thin film transistor devices 12 are disposed on the first substrate 11 at intervals. Specifically, the thin film transistor device 12 includes: an active layer 121, a gate insulating layer 122, a gate electrode 123, an interlayer insulating layer 124, a source electrode 125, and a drain electrode 126. In this embodiment, the thin film transistor device 12 is a top gate structure, and in other embodiments, a bottom gate structure may be selected according to actual needs, which is not limited in this application.
Wherein the active layer 121 is disposed on the first substrate 11. The active layer 121 includes a channel portion 1211 and conductive portions 1212 at both ends of the channel portion.
Wherein the gate insulating layer 122 is disposed at a side of the active layer 121 remote from the first substrate 11. The gate insulating layer 122 is mainly used to prevent a short circuit phenomenon from occurring in contact between the active layer 121 and the gate electrode 123. The gate insulating layer 122 may be SiOx, siNx or Al 2 O 3 Or a combination structure of SiNx and SiOx or a combination structure of SiOx, siNx and SiOx, etc. In this embodiment, the gate insulating layer 122 may be made of SiO 2 。
Wherein the gate electrode 123 is disposed on a side of the gate insulating layer 122 away from the first substrate 11. The material of the gate electrode 123 may be a single-layer structure such as Mo, al, cu, ti, or a multi-layer structure such as Mo/Al/Mo, mo/Cu, moTi/Cu.
The interlayer insulating layer 124 is disposed on a side of the gate electrode 123 away from the substrate 11, and extends to cover the first substrate 11. The interlayer insulating layer 124 may be SiOx, siNx or Al 2 O 3 Or a combination structure of SiNx and SiOx or a combination structure of SiOx, siNx and SiOx, etc.
The source electrode 125 and the drain electrode 126 are disposed on a side of the interlayer insulating layer 124 away from the substrate 11, and are electrically connected to the two conductive portions 1212, respectively. The source electrode 125 and the drain electrode 126 may have a single-layer structure such as Mo, al, cu, ti, or may have a multi-layer structure such as Mo/Al/Mo, mo/Cu, moTi/Cu.
Wherein the array substrate 1 further comprises a passivation layer 14. Passivation layer 14 is disposed far from the thin film transistor device 12From one side of the first substrate 11. The passivation layer 14 is made of SiO 2 And one or more of SiNx. In this embodiment, the passivation layer 14 is made of SiO 2 。
Wherein a plurality of pixel electrodes 13 are electrically connected to the thin film transistor device 12 in a one-to-one correspondence. Specifically, each pixel electrode 13 is electrically connected to the drain electrode 126 of one thin film transistor device 12 through the passivation layer 14.
Wherein, a plurality of black barriers 3 are arranged on one side of the thin film transistor device 12 away from the first substrate 11 in a one-to-one correspondence. Specifically, the black retaining wall 3 is disposed corresponding to the thin film transistor device 12, and is disposed on a side of the passivation layer 14 away from the first substrate 11. Wherein the black bank 3 and the pixel electrode 13 form a plurality of accommodating chambers 6.
Specifically, the orthographic projections of the gate electrode 123 and the source electrode 125 on the first substrate 11 fall within the orthographic projection of the black retaining wall 3 on the first substrate 11. In other words, the black bank 3 completely covers the gate electrode 123 and the source electrode 125.
Wherein the black retaining wall 3 has a proximal end close to the array substrate 1 and a distal end far from the array substrate 1, the array substrate 1 has a thickness direction H, and the proximal end has a dimension L perpendicular to the thickness direction H 2 Greater than the dimension L of the distal end in a direction perpendicular to the thickness direction H 1 . Further, the dimension of the black retaining wall 3 in the present embodiment in the direction perpendicular to the thickness direction H is gradually reduced from the proximal end to the distal end.
Wherein the dimension L of the distal end in a direction perpendicular to the thickness direction H 1 In the range of 4 μm to 8. Mu.m. In this embodiment, the dimension L of the distal end in the direction perpendicular to the thickness direction H 1 5 μm, in other embodiments, the dimension L of the distal end in a direction perpendicular to the thickness direction H 1 But may also be 4 μm, 6 μm, 7 μm or 8 μm.
Wherein the dimension of the proximal end in a direction perpendicular to the thickness direction H is in the range of 8 μm to 12 μm. In this embodiment, the proximal end is perpendicular to the thickness directionDimension L in the direction of H 2 9 μm, in other embodiments, the proximal end has a dimension L in a direction perpendicular to the thickness direction H 2 It may also be 8 μm, 10 μm, 11 μm or 12 μm.
Wherein the height of the black retaining wall 3 is in the range of 3 μm to 20 μm. Specifically, the height of the black retaining wall 3 refers to the dimension of the black retaining wall 3 in a direction parallel to the thickness direction H of the array substrate 1. In this embodiment, the height of the black retaining wall 3 is 19 μm, and in other embodiments, the height of the black retaining wall 3 may be 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm or 20 μm.
Wherein, the black retaining wall 3 comprises the following materials: black acrylic resin, black epoxy resin, black polyurethane and black silica gel. In this embodiment, the black retaining wall 3 is made of black acrylic resin. In this embodiment, the black retaining wall 3 is disposed at the position corresponding to the thin film transistor device 12 on the array substrate 1, and the black retaining wall 3 is utilized to absorb the external ambient light, so as to reduce the probability of reflection of the external ambient light to the metal layers (such as the gate 123 and the source 125) in the thin film transistor device 12, thereby reducing the probability of light leakage and color cross of the display panel 100 in the black state, and further improving the contrast of the display panel 100.
Wherein, the electronic ink 4 is filled in the accommodating cavity 6. In this embodiment, the electronic ink 4 includes: white particles and black particles. The white particles are positively charged and the black particles are negatively charged, and a vertical electric field is supplied through the pixel electrode 13 and the common electrode 23, so that vertical movement is generated by coulomb force, and the black particles are displayed in a black state when they are distributed on the upper viewing side, and the white particles are displayed in a white state when they are distributed on the upper viewing side.
The color film substrate 2 is disposed opposite to the array substrate 1, and is connected to a surface of the black retaining wall 3 on a side away from the array substrate 1. That is, there is no gap between the black retaining wall 3 and the color film substrate 2.
Wherein, the color film substrate 2 may include: a second substrate 21, a color filter unit 22 and a common electrode 23. Wherein the color filter unit 22 includes: a red filter unit 221, a green filter unit 222, and a blue filter unit 223.
The frame glue 5 is disposed between the array substrate 1 and the color film substrate 2, and surrounds the black retaining wall 3 and the electronic ink 4. Wherein, the material of frame glue 5 includes: acrylic, epoxy, polyurethane, silica gel.
The embodiment also provides a preparation method of the display panel of the embodiment, which comprises the following steps: s1, preparing a black retaining wall 3 on an array substrate, wherein the black retaining wall 3 is arranged corresponding to a thin film transistor device, and the black retaining wall 3 and a pixel electrode 13 of the array substrate 1 form a plurality of accommodating cavities 6; s2, filling the electronic ink 4 in the accommodating cavity 6; s3, preparing a frame glue material on the array substrate 1, performing alignment and lamination on the color film substrate 2 and the array substrate 1, and then solidifying the frame glue material to form a frame glue 5, wherein the frame glue 5 surrounds the black retaining wall 3 and the electronic ink 4.
In S1, one of imprinting, photolithography, and spraying may be used to prepare the black retaining wall 3 on the array substrate 1.
In S2, one of silk screen printing, ink jet and doctor blade coating may be used to fill the electronic ink 4 in the area surrounded by the black retaining wall 3 and the array substrate 1.
Example 2
As shown in fig. 2, this embodiment includes most of the technical features of embodiment 1, and the difference between this embodiment and embodiment 1 is that: in this embodiment, the display panel 100 further includes: a light absorbing unit 7. The light absorbing unit 7 is connected between at least two adjacent black retaining walls 3 and is located on the surface of one side of the array substrate 1 close to the color film substrate 2. Specifically, the light absorbing unit 7 is disposed on the surface of the side of the pixel electrode 13 remote from the first substrate 11.
The materials of the light absorbing unit 7 include: black acrylic resin, black epoxy resin, black polyurethane and black silica gel. In this embodiment, the light absorbing unit 7 is made of black acrylic resin. In this embodiment, the light absorbing unit 7 is disposed between at least two adjacent black barriers 3, and the light absorbing unit 7 is used to further absorb the external ambient light, so as to reduce the probability of reflection of the external ambient light to the metal layers (such as the gate and the source) in the thin film transistor device 12, thereby reducing the probability of light leakage and cross color of the display panel 100 in the black state, and further improving the contrast ratio of the display panel 100.
In this embodiment, the material of the light absorbing unit 7 is the same as that of the black wall 3. Thereby, the light absorbing unit 7 and the black retaining wall 3 can be simultaneously formed by one process. In other embodiments, the material of the light absorbing unit 7 may be different from that of the black retaining wall 3.
The embodiment also provides a preparation method of the display panel of the embodiment, which comprises the following steps: s1, preparing black retaining walls 3 and light absorbing units 7 on an array substrate, wherein the black retaining walls 3 and the thin film transistor devices 12 are correspondingly arranged, the light absorbing units 7 are connected between at least two adjacent black retaining walls 3, and the black retaining walls 3 and pixel electrodes 13 of the array substrate 1 form a plurality of accommodating cavities 6; s2, filling the electronic ink 4 in the accommodating cavity 6; s3, preparing a frame glue material on the array substrate 1, and curing the frame glue material to form a frame glue 5 after aligning and attaching the color film substrate 2 and the array substrate 1, wherein the frame glue 5 surrounds the black retaining wall 3, the light absorbing unit 7 and the electronic ink 4.
The foregoing has outlined a detailed description of a display panel provided herein, wherein specific examples are provided herein to illustrate the principles and embodiments of the present application, the above examples being provided only to assist in understanding the method of the present application and the core ideas thereof; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (10)
1. A display panel, comprising:
an array substrate (1) comprising a first substrate (11), a plurality of thin film transistor devices (12) arranged on the first substrate (11) at intervals, and a plurality of pixel electrodes (13) electrically connected to the thin film transistor devices (12) in a one-to-one correspondence;
the black retaining walls (3) are arranged on one side, far away from the first substrate (11), of the thin film transistor device (12) in one-to-one correspondence, and two adjacent black retaining walls (3) and the pixel electrode (13) form a containing cavity (6);
electronic ink (4) is filled in the accommodating cavity (6); and
the color film substrate (2) is arranged opposite to the array substrate (1) and is connected to the surface of one side, far away from the array substrate (1), of the black retaining wall (3).
2. The display panel of claim 1, further comprising:
and the light absorption unit (7) is connected between at least two adjacent black retaining walls (3) and is positioned on the surface of one side of the array substrate (1) close to the color film substrate (2).
3. The display panel according to claim 1 or 2, wherein the thin film transistor device (12) comprises a gate electrode (123) and a source electrode (125);
the orthographic projections of the grid electrode (123) and the source electrode (125) on the first substrate (11) fall into orthographic projections of the black retaining wall (3) on the first substrate (11).
4. The display panel according to claim 1 or 2, wherein the black retaining wall (3) has a proximal end close to the array substrate (1) and a distal end distant from the array substrate (1), the array substrate (1) having a thickness direction (H), a dimension of the proximal end in a direction perpendicular to the thickness direction (H) being larger than a dimension of the distal end in a direction perpendicular to the thickness direction (H).
5. A display panel according to claim 4, characterized in that the dimension of the black retaining wall (3) in the direction perpendicular to the thickness direction (H) is tapered from the proximal end to the distal end.
6. The display panel according to claim 4, characterized in that the dimension of the distal end in the direction perpendicular to the thickness direction (H) is in the range of 4 μm-8 μm and the dimension of the proximal end in the direction perpendicular to the thickness direction (H) is in the range of 8 μm-12 μm.
7. A display panel according to claim 1 or 2, characterized in that the height of the black retaining wall (3) is in the range of 3 μm-20 μm.
8. A display panel according to claim 1 or 2, characterized in that the material of the black retaining wall (3) comprises: black acrylic resin, black epoxy resin, black polyurethane and black silica gel.
9. A display panel according to claim 2, characterized in that the material of the light absorbing unit (7) comprises: black acrylic resin, black epoxy resin, black polyurethane and black silica gel.
10. A display panel according to claim 2, characterized in that the light absorbing unit (7) is of the same material as the black wall (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311580209.5A CN117539103A (en) | 2023-11-22 | 2023-11-22 | Display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311580209.5A CN117539103A (en) | 2023-11-22 | 2023-11-22 | Display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117539103A true CN117539103A (en) | 2024-02-09 |
Family
ID=89793517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311580209.5A Pending CN117539103A (en) | 2023-11-22 | 2023-11-22 | Display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117539103A (en) |
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2023
- 2023-11-22 CN CN202311580209.5A patent/CN117539103A/en active Pending
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