CN117438525A - Micro LED packaging structure and preparation method thereof - Google Patents
Micro LED packaging structure and preparation method thereof Download PDFInfo
- Publication number
- CN117438525A CN117438525A CN202311386412.9A CN202311386412A CN117438525A CN 117438525 A CN117438525 A CN 117438525A CN 202311386412 A CN202311386412 A CN 202311386412A CN 117438525 A CN117438525 A CN 117438525A
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- Prior art keywords
- micro led
- heat dissipation
- layer
- gel layer
- dissipation gel
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 230000017525 heat dissipation Effects 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000010146 3D printing Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 238000003466 welding Methods 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 238000000016 photochemical curing Methods 0.000 claims description 14
- 238000005476 soldering Methods 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000000806 elastomer Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a Micro LED packaging structure and a preparation method thereof. The Micro LED packaging structure comprises a substrate layer, a plurality of Micro LED chips and a heat dissipation gel layer, wherein the Micro LED chips are arranged in an array mode on the substrate layer, the heat dissipation gel layer is light-cured resin formed by 3D printing, the heat dissipation gel layer is attached to the substrate layer, and the heat dissipation gel layer surrounds each Micro LED chip. Compared with the prior art, the Micro LED packaging structure does not need to be externally connected with a heat dissipation layer or a heat dissipation channel, and the heat dissipation gel layer is tightly attached to the Micro LED chip and the substrate layer, so that heat can be quickly dissipated, and the reliability and the service life of a product are improved. In addition, the heat dissipation gel layer is formed through 3D printing, the forming speed is high, and the process efficiency is greatly improved.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a Micro LED packaging structure and a preparation method thereof.
Background
Micro light emitting diodes (Micro Light Emitting Diode, micro-LEDs) are a self-luminous display technology that can reduce pixel sites to the micrometer level and can be highly integrated on a chip, with potential advantages in terms of ultra-high resolution and pixel density. Because the size is smaller, if the heat dispersion of the Micro LED packaging structure is poor, the Micro LED chip can collect heat in a narrow packaging cavity, so that the increase of thermal stress is caused, and the luminous efficiency and the service life are reduced.
In order to improve the heat radiation performance of the Micro LED chip in the packaging cavity, the prior art is externally connected with a heat radiation plate at the outer side of a chip access circuit or a heat radiation channel is LED out below the chip, but the method has an influence on the air tightness and the reliability of the packaging structure. Aiming at the problem of air tightness, the ceramic layer is plated above the chip access circuit board in the prior art, but the method has a certain influence on the luminous efficiency and the luminous angle of the Micro LED chip.
Disclosure of Invention
Based on the above, the invention aims to provide a Micro LED packaging structure and a preparation method thereof.
In one aspect, the invention provides a Micro LED packaging structure, which comprises a substrate layer, a plurality of Micro LED chips and a heat dissipation gel layer, wherein the Micro LED chips are arranged on the substrate layer in an array manner, the heat dissipation gel layer is a 3D printing-molded photo-curing resin, the heat dissipation gel layer is attached to the substrate layer, and the heat dissipation gel layer surrounds each Micro LED chip.
Compared with the prior art, the Micro LED packaging structure does not need to be externally connected with a heat dissipation layer or a heat dissipation channel, and the heat dissipation gel layer is tightly attached to the Micro LED chip and the substrate layer, so that heat can be quickly dissipated, and the reliability and the service life of a product are improved. In addition, the heat dissipation gel layer is formed through 3D printing, the forming speed is high, and the process efficiency is greatly improved.
In one embodiment, the heat-dissipating gel layer is a transparent, photocurable silicone elastomer material. Compared with inorganic ceramic materials, the heat dissipation gel layer is a transparent elastomer, has no blocking and shielding effects on light rays, and does not influence the luminous angle and luminous efficiency of the product.
In one embodiment, a solder layer is further included, the solder layer being located between the substrate layer and the Micro LED chip, electrically connecting the substrate layer and the Micro LED chip.
In one embodiment, the layer of heat spreading gel surrounds the solder layer.
In one embodiment, the Micro LED package further comprises a plastic sealing layer, wherein the plastic sealing layer wraps each Micro LED chip and the heat dissipation gel layer and is attached to the substrate layer.
In one aspect, the invention provides a method for preparing a Micro LED packaging structure, which comprises the following steps:
3D printing a heat dissipation gel layer on an uncured PCB circuit board;
and carrying out Micro LED packaging on the PCB circuit board containing the heat dissipation gel layer.
In one embodiment, the 3D printing of the heat dissipation gel layer on the PCB circuit board without die bonding includes:
cleaning an uncured PCB circuit board;
placing the PCB circuit board in a photo-curing 3D printing device to form a heat dissipation gel layer;
and cleaning and drying the PCB circuit board containing the heat dissipation gel layer.
In one embodiment, the spot pattern emitted by the photo-curing 3D printing device is based on a PCB, and the area of the solder joint of the chip is subtracted.
In one embodiment, the Micro LED package for a PCB circuit board containing the heat dissipation gel layer includes:
transferring Micro LED chips to a welding spot area of the PCB in batches through a huge amount transfer device;
welding the Micro LED chip with a welding spot to form a tin welding layer;
and carrying out plastic packaging on the PCB to form a plastic packaging layer.
In one embodiment, before the Micro LED chips are transferred to the solder joint area of the PCB by the bulk transfer device, the method further includes:
spraying soldering flux on the PCB.
Drawings
FIG. 1 is a schematic diagram of an uncured PCB circuit according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of a photo-curing 3D printing device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a PCB circuit board with a heat dissipation gel layer according to an embodiment of the invention;
FIG. 4 is a schematic cross-sectional view of a PCB circuit board with a heat dissipation gel layer according to one embodiment of the present invention;
FIG. 5 is a schematic diagram of a macro-transfer Micro LED chip according to one embodiment of the invention;
FIG. 6 is a schematic diagram of the reverse structure of an LED package structure of an LED device package array according to one embodiment of the present invention;
fig. 7 is a schematic diagram of step S102 of a cutting method of an LED device package array according to an embodiment of the present invention.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is, however, susceptible of embodiment in many other forms than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the application, and therefore the application is not to be limited to the specific embodiments disclosed below.
When improving the heat dispersion of Micro LED chip in the encapsulation cavity, prior art can produce the influence to packaging structure's gas tightness, luminous efficacy and the luminous angle of product. Aiming at the problem, the invention applies the 3D printing technology to the packaging process of the Micro LED chip, and forms the heat dissipation gel layer in the Micro LED packaging structure by utilizing the high-precision and high-efficiency forming process of the photo-curing 3D printing technology, so that the heat dissipation can be realized quickly, and the light emitting angle and the light emitting efficiency of the product can not be influenced.
Embodiments of the present invention will be further described below with reference to the accompanying drawings.
The preparation method of the Micro LED chip packaging structure comprises the following steps:
step S1, cleaning an uncured PCB, and placing the uncured PCB into a photo-curing 3D printing device to form a heat dissipation gel layer.
Referring to fig. 1, the PCB circuit board without die bonding includes a substrate layer 10, a plurality of chip pad areas 11 are disposed on the substrate layer 10, and the plurality of chip pad areas 11 are arranged in an array.
Referring to fig. 2, the photo-curing 3D printing apparatus includes an ultraviolet light source 1, a resin pool 2 and a moving platform 3, wherein the resin pool 2 is located below the ultraviolet light source 1, and the moving platform 3 is disposed in the resin pool 2 and can move up and down in the resin pool 2. Before molding, modeling is performed according to parameters of the LED chip and the PCB. In order to ensure the heat dissipation effect, if the height of the LED chip is H, the length of the circuit board is L, the width of the circuit board is D, the height H of the heat dissipation layer model is 1/3H-1/2H, the length L is 90% L-80% L, the width D is 90% D-80% D, and the corresponding position of the welding spot area of the chip is left empty. And the photo-curing 3D printing device prints layer by layer according to the modeling information to obtain the heat dissipation gel layer with accurate size.
And during molding, injecting the photo-curing organic silicon resin into the resin pool 2, and placing the PCB circuit board without solid crystal on the mobile platform 3, so that the photo-curing organic silicon resin completely submerges the PCB circuit board. The ultraviolet light source 1 emits corresponding forming light spots according to a preset light spot pattern, and the irradiated light-cured organic silicon resin is cured. The moving platform 3 drives the PCB circuit board layer to move downwards for a certain distance, and printing is performed layer by layer. And after printing, taking out the PCB, washing uncured resin with alcohol, and drying to obtain the PCB with the heat dissipation gel layer 20 shown in figures 3-4. Through photo-curing molding, the heat dissipation gel layer is closely attached to the substrate layer and the chip welding spot area.
And S2, spraying soldering flux on the PCB.
In this embodiment, the soldering flux is sprayed to make the soldering points of the PCB circuit board wet with the soldering flux, so as to ensure the soldering effect of the chip and the circuit board.
And S3, transferring the Micro LED chips to a chip welding spot area of the PCB in batches through a mass transfer device.
The huge transfer technology is to accurately and batchwise transfer a huge number of Micro-scale Micro LED chips on an original substrate to a target substrate through high-precision and high-efficiency equipment, and form good electrical connection and mechanical fixation with a driving circuit on the substrate, so that the mass production requirement and industrialization of Micro LEDs are finally realized. In the prior art, the Micro LED chip often has the phenomena of Die deviation and Die removal, and the production yield is affected. When the Micro LED chip transfers in a huge amount, the chip is transferred from a factory substrate to a welding spot of the circuit board to generate position offset, so that an electrode on the chip is not in full corresponding contact with the welding spot on the circuit board, and the ohmic electric connection between the chip and the circuit board is insufficient. DeDie refers to that after a huge amount of Micro LED chips are transferred, the chip electrodes are not firmly connected with welding spots of a circuit board, and the chip electrodes are connected with the welding spots of the circuit board under the actions of carrying, post-working procedures, environmental stress and the like so as to loosen, so that the chips fall off from the circuit board and fail.
Referring to fig. 5, the heat dissipation gel layer 20 of the present invention forms a similar "surrounding" structure to the chip solder joint region 11, and has an auxiliary positioning effect to the Micro LED chip 30 during the mass transfer process, so that the chip will not shift in position, and the deviation Die can be avoided. After the transfer of the huge amount, the heat dissipation gel layer 20 has a certain traction effect on the periphery of the Micro LED chip 30, so that resistance is provided when the chip is loosened and stripped under the action of acting force, the chip can be prevented from falling off, and the probability of Die falling off is reduced.
And S4, welding the Micro LED chip 30 with a welding spot on the PCB circuit board by adopting laser welding to form a tin welding layer 40.
In this embodiment, the Micro LED chip 30 is a tin-plated chip, and the PCB circuit board is a normal nickel-gold plated circuit board. As shown in fig. 6, the solder joints of the Micro LED chip 30 and the PCB circuit board are sufficiently soldered to form a solder layer 40, so that the Micro LED chip 30 and the PCB circuit board are ensured to be electrically connected in ohmic mode, and the Micro LED chip 30 emits light. In other embodiments, the Micro LED chip 30 may be a common gold electrode LED chip, and the PCB circuit board is a tin-plated circuit board, and the tin solder layer 3 can be formed. In this embodiment, laser welding is adopted, and in other embodiments, the welding may be completed through thermal welding processes such as heating in a reflow oven tunnel oven, heating in an oven, and the like.
And S5, performing plastic packaging on the PCB to form a plastic packaging layer 50.
And (5) performing plastic packaging and demolding through plastic packaging glue to obtain the Micro LED packaging structure.
As shown in fig. 7, the Micro LED package structure of the present invention includes a substrate layer 10, a heat dissipation gel layer 20, a plurality of Micro LED chips 30, a plurality of solder layers 40, and a plastic layer 50, wherein the plurality of Micro LED chips 30 are arranged in an array on the substrate layer 10, and the plastic layer 50 wraps each Micro LED chip 30 and the heat dissipation gel layer 20 and is attached to the substrate layer 10.
The heat dissipation gel layer 20 is attached to the substrate layer 10, and the heat dissipation gel layer 20 surrounds each Micro LED chip 30 and the soldering layer 40. Thus, heat generated by the Micro LED chip 30 during operation can be transferred to the heat dissipation gel layer 20 through the solder layer 40, thereby rapidly dissipating heat. In addition, the heat dissipation gel layer 20 is a transparent elastomer, has no blocking and shielding effects on light rays, and does not affect the light emitting angle and the light emitting efficiency of the product.
Compared with the prior art, the heat dissipation gel layer is formed through 3D printing, so that the heat dissipation gel layer is tightly attached to the substrate layer, the Micro LED chip and the tin soldering layer, heat can be quickly dissipated, the reliability and the service life of a product are improved, the forming speed is high, and the process efficiency is greatly improved. And the radiating gel layer is a transparent elastomer, has no blocking and shielding effects on light rays, and can not influence the luminous angle and luminous efficiency of the product. In addition, during mass transfer, the heat dissipation gel layer has an auxiliary positioning function on the Micro LED chip, so that the welding accuracy can be improved, and the occurrence of partial Die is avoided; after the huge transfer, the heat dissipation gel layer has a certain traction effect on the periphery of the Micro LED chip, so that resistance is provided when the chip is loosened and stripped under the action of acting force, the chip can be prevented from falling off, and the probability of Die falling off is reduced.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. The utility model provides a Micro LED packaging structure, its characterized in that, includes substrate layer, a plurality of Micro LED chip and heat dissipation gel layer, a plurality of Micro LED chip are the array arrangement on the substrate layer, the heat dissipation gel layer is 3D and prints fashioned photocuring resin, the laminating of heat dissipation gel layer is in on the substrate layer, every Micro LED chip is encircled to the heat dissipation gel layer.
2. The Micro LED package structure of claim 1, wherein the heat dissipation gel layer is a transparent photo-cured silicone elastomer material.
3. The Micro LED package structure of any one of claims 1-2, further comprising a solder layer between the substrate layer and the Micro LED chip, electrically connecting the substrate layer and the Micro LED chip.
4. The Micro LED package structure of claim 3, wherein the heat sink gel layer surrounds the solder layer.
5. The Micro LED package structure of any one of claims 1-2, further comprising a plastic layer that encapsulates each of the Micro LED chip and the heat dissipation gel layer and is bonded to the substrate layer.
6. The preparation method of the Micro LED packaging structure is characterized by comprising the following steps of:
3D printing a heat dissipation gel layer on an uncured PCB circuit board;
and carrying out Micro LED packaging on the PCB circuit board containing the heat dissipation gel layer.
7. The method for manufacturing a Micro LED package structure according to claim 6, wherein the 3D printing of the heat dissipation gel layer on the PCB without die bonding comprises:
cleaning an uncured PCB circuit board;
placing the PCB circuit board in a photo-curing 3D printing device to form a heat dissipation gel layer;
and cleaning and drying the PCB circuit board containing the heat dissipation gel layer.
8. The method for manufacturing a Micro LED package structure according to claim 7, wherein the spot pattern emitted from the photo-curing 3D printing device is based on a PCB, and the area of the solder joint of the chip is subtracted.
9. The method for manufacturing a Micro LED package structure according to any one of claims 6 to 8, wherein the Micro LED package is performed on a PCB circuit board containing the heat dissipation gel layer, comprising:
transferring Micro LED chips to a welding spot area of the PCB in batches through a huge amount transfer device;
welding the Micro LED chip with a welding spot to form a tin welding layer;
and carrying out plastic packaging on the PCB to form a plastic packaging layer.
10. The Micro LED package of claim 9, further comprising, prior to said mass transfer of Micro LED chips to solder joint areas of said PCB by mass transfer equipment:
spraying soldering flux on the PCB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311386412.9A CN117438525A (en) | 2023-10-24 | 2023-10-24 | Micro LED packaging structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311386412.9A CN117438525A (en) | 2023-10-24 | 2023-10-24 | Micro LED packaging structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117438525A true CN117438525A (en) | 2024-01-23 |
Family
ID=89545569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311386412.9A Pending CN117438525A (en) | 2023-10-24 | 2023-10-24 | Micro LED packaging structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117438525A (en) |
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2023
- 2023-10-24 CN CN202311386412.9A patent/CN117438525A/en active Pending
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