CN117374730A - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
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- CN117374730A CN117374730A CN202311495870.6A CN202311495870A CN117374730A CN 117374730 A CN117374730 A CN 117374730A CN 202311495870 A CN202311495870 A CN 202311495870A CN 117374730 A CN117374730 A CN 117374730A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
- H01S5/1096—Multi-wavelength lasing in a single cavity
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Abstract
The invention relates to the technical field of lasers, and provides a semiconductor laser, which comprises: the light emitting module is stacked with at least two light emitting modules along the fast axis direction, and comprises light emitting units, wherein the light emitting units of the plurality of light emitting modules are distributed along the slow axis direction; a resonant cavity for resonating the light beams emitted by the plurality of light emitting units into an external cavity; the slow axis beam combining module is used for combining the beams emitted by the light emitting units in the slow axis direction, and the emergent beam part is fed back to the light emitting module along the original light path, so that the light emitting units are locked on different wavelengths according to the arrangement positions, a plurality of light emitting sub-units with continuous wavelengths are spontaneously formed in a single light emitting unit, and the light emitting sub-units are combined in the slow axis direction; the fast axis beam combination module is used for combining the beams emitted by the resonant cavity in the fast axis direction; by the arrangement, beam combination in the fast axis direction can be performed on the premise of improving the beam quality in the slow axis direction, so that the beam quality and the light brightness of the semiconductor laser are further improved.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a semiconductor laser.
Background
A semiconductor laser is a rapidly developed and widely used electro-optic conversion device, the gain medium of which is a semiconductor substance used, electrons absorb energy under the excitation of external energy to transition to a high energy level and then to a given low energy level, and the laser emits light by utilizing the principle. The resonant cavity is directly formed by using the cleavage surface of the semiconductor crystal, so that optical feedback in the cavity is formed to continuously radiate and amplify light, and laser output is achieved.
Compared with other types of lasers, the semiconductor laser has many characteristics of high electro-optical conversion efficiency, small volume and the like, is widely used as a direct light source or a pumping source, but has the influence on further development due to the fact that the output power of a single semiconductor light emitting unit is low, the quality difference of fast and slow axis light beams is large and the like caused by the structural characteristics of the semiconductor light emitting unit. Therefore, how to obtain a semiconductor laser output having high power, high beam quality and high brightness at the same time has become a big bottleneck in the field of international laser technology.
To solve the above problems, a spectral synthesis technique is applied to a plurality of light emitting units of a semiconductor laser, which can achieve a partial improvement in power and overall beam quality, but in an ideal case can only achieve the beam quality of a single light emitting unit involved in beam combination. Spectral synthesis techniques are generally divided into two directions: first, the method can improve the overall slow axis beam quality to a level close to that of a single light-emitting unit, but the output power is not too high due to the limited number of beam-combining units. And secondly, spectrum beam combination is carried out along the fast axis direction, the method can greatly increase the output power, but the quality of the light beam in the slow axis direction is equivalent to that of a single light-emitting unit, and the quality and the brightness of the light beam cannot be further improved.
Accordingly, there is a need for a high power, high beam quality and correspondingly high brightness semiconductor laser.
Disclosure of Invention
The invention provides a semiconductor laser which is used for solving the defect that the quality and the brightness of a light beam are difficult to further improve in the prior art and realizing the output of the semiconductor laser with high power, high light beam quality and corresponding high brightness.
The present invention provides a semiconductor laser including:
the light emitting module is stacked with at least two light emitting units along the fast axis direction, and the light emitting units of the light emitting modules are distributed along the slow axis direction;
a resonant cavity for resonating the light beams emitted by the plurality of light emitting units into an external cavity;
the slow axis beam combining module is arranged in the resonant cavity and is used for combining the light beams emitted by the light emitting units in the slow axis direction; meanwhile, the light beams emitted by the slow axis beam combining module are partially fed back to the light emitting module along an original light path under the action of the resonant cavity, so that a plurality of light emitting units are locked on different wavelengths according to arrangement positions, a plurality of light emitting subunits with continuous wavelengths are spontaneously formed in a single light emitting unit, and the light emitting subunits are combined along the slow axis direction under the action of the slow axis beam combining module;
and the fast axis beam combination module is used for combining the beams emitted by the resonant cavity in the fast axis direction.
According to the semiconductor laser provided by the invention, one end of the light-emitting unit is an emergent end, the opposite end is a reflecting end, and a gain medium is arranged between the emergent end and the reflecting end;
the light source also comprises an output coupling mirror, wherein the output coupling mirror is used for providing partial feedback and output for the light beam; the resonant cavity is at least composed of the reflecting end, the gain medium and the output coupling mirror.
According to the semiconductor laser provided by the invention, the slow axis beam combination module comprises a slow axis optical conversion system and a slow axis diffraction optical element which are sequentially arranged along an optical path;
the slow axis optical conversion system is used for focusing the light beam emitted by the light emitting unit to the surface of the slow axis diffraction optical element along the slow axis direction.
According to the semiconductor laser provided by the invention, the fast axis beam combination module comprises a fast axis optical conversion system and a fast axis diffraction optical element which are sequentially arranged along an optical path;
the fast axis optical transformation system is used for focusing the light beams emitted by the resonant cavity onto the fast axis diffraction optical element along the fast axis direction, and outputting the light beams along the same direction after being diffracted by the fast axis diffraction optical element.
According to the present invention, there is provided a semiconductor laser, wherein the slow-axis diffractive optical element and/or the fast-axis diffractive optical element includes a transmissive grating and a reflective grating.
According to the semiconductor laser provided by the invention, the slow-axis diffraction optical element and/or the fast-axis diffraction optical element adopts a multilayer dielectric film grating with the line density higher than 900 lines/mm.
The semiconductor laser provided by the invention further comprises a fast axis collimating element, wherein the fast axis collimating element is arranged at the emergent end of the light emitting module and is used for collimating the light beam emitted by the light emitting unit in the fast axis direction.
According to the semiconductor laser provided by the invention, the fast axis collimating element is plated with the antireflection film.
According to the semiconductor laser provided by the invention, the slow-axis optical conversion system and/or the fast-axis optical conversion system are/is plated with the antireflection film.
According to the semiconductor laser provided by the invention, the semiconductor laser further comprises a half-wave plate arranged at the incident end of the fast axis beam combining module, and the polarization direction of the light beam emitted from the resonant cavity is rotated by 90 degrees through the half-wave plate so as to be matched with the fast axis beam combining module.
According to the semiconductor laser provided by the invention, the thickness of the light emitting area of the light emitting unit along the fast axis direction is 1.2-3 μm, and the stripe width along the slow axis direction is 0.1-1 mm.
According to the semiconductor laser provided by the invention, the output coupling mirror is a plane mirror and is plated with a film with a preset reflectivity R for output laser, wherein R is more than or equal to 5% and less than or equal to 30%.
According to the semiconductor laser provided by the invention, the slow-axis optical conversion system and/or the fast-axis optical conversion system comprise a plano-convex cylindrical mirror and an aspheric cylindrical mirror.
According to the semiconductor laser provided by the invention, under the action of the resonant cavity, the light-emitting units of the light-emitting modules can form external cavity resonance, the slow axis beam combination module can combine beams emitted by the light-emitting units in the slow axis direction, and meanwhile, the beams emitted by the slow axis beam combination module are partially fed back to the light-emitting units along an original light path under the action of the resonant cavity, so that the light-emitting units are locked on different wavelengths according to the arrangement positions, and a plurality of continuous light-emitting subunits with the wavelengths are spontaneously formed in a single light-emitting unit;
the plurality of light emitting sub-units are combined along the slow axis direction under the action of the slow axis beam combining module; self-organizing resonance and beam combination of the light beam in the slow axis direction are realized through the resonant cavity and the slow axis beam combination module, and the light beam quality in the slow axis direction is greatly improved under the condition of keeping the output power unchanged; the light beams emitted by the resonant cavity are incident to the fast axis beam combining module, and under the action of the fast axis beam combining module, the light beams emitted by the light emitting units are overlapped into one beam in the near field and the far field, and the light beam quality is close to that of the fast axis light beam of the single light emitting unit; therefore, on the premise of improving the beam quality in the slow axis direction, beam combination in the fast axis direction is carried out, so that the beam quality and the light brightness of the semiconductor laser are further improved.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a light emitting module according to an embodiment of the present invention arranged along a fast axis direction;
fig. 2 is a schematic diagram of a light emitting module according to an embodiment of the present invention arranged along a slow axis direction;
fig. 3 is a schematic diagram of an arrangement of light emitting units according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a resonant cavity and slow axis beam combining module according to an embodiment of the present invention;
FIG. 5 is a schematic view of a semiconductor laser projected parallel to the slow axis direction in one embodiment of the invention;
FIG. 6 is a schematic view of a semiconductor laser projected parallel to the fast axis in one embodiment of the invention;
FIG. 7 is a schematic view showing a projection of a semiconductor laser parallel to a slow axis direction in another embodiment of the present invention;
fig. 8 is a schematic view showing a projection of a semiconductor laser parallel to a fast axis direction according to another embodiment of the present invention.
Reference numerals:
1. a light emitting module; 10. a light emitting unit; 2. a fast axis collimation element; 3. a slow axis optical transformation system; 4. an output coupling mirror; 5. a slow axis diffractive optical element; 6. a fast axis optical transformation system; 7. a fast axis diffractive optical element; 8. a half wave plate.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to facilitate understanding of the semiconductor laser provided by the invention, the application background is described first, the semiconductor laser is an electro-optical conversion device using semiconductor substances as gain media, and compared with other types of lasers, the semiconductor laser has many advantages of high electro-optical conversion efficiency, small volume and the like, but the output power of a single semiconductor light emitting unit is lower due to the self structural characteristics of the semiconductor laser, and the quality difference of fast and slow axis light beams is huge to further develop, so how to obtain semiconductor laser output with high power, high light beam quality and high brightness simultaneously has become a big bottleneck in the laser technical field.
To solve the above problems, a spectrum synthesis technique is applied to a plurality of light emitting units of a semiconductor laser, and the spectrum synthesis technique is generally divided into two directions:
firstly, the method is carried out along the slow axis direction, the method can improve the quality of the light beam in the overall slow axis direction to a level close to that of a single light-emitting unit, but the output power is not too high due to the limited participation of a beam combining unit; to increase the output power, some studies have been made to stack several semiconductor chips in the fast axis direction on the basis of slow axis beam combination, but this approach increases the beam quality in the fast axis direction by a factor.
And secondly, spectrum beam combination is carried out along the fast axis direction, the method can greatly increase the output power, but the quality of the light beam in the slow axis direction is equivalent to that of a single light-emitting unit, and the quality and the brightness of the light beam cannot be further improved.
Therefore, how to realize the output of high power, high beam quality and high brightness of the semiconductor laser has become an important issue to be solved.
Based on the above, the invention provides a semiconductor laser, which can improve the quality and brightness of light beams under the condition of a certain output power.
The semiconductor laser of the present invention is described below with reference to fig. 1 to 8.
Referring to fig. 1 to 6, a semiconductor laser includes a light emitting module 1, a resonant cavity, a slow axis beam combining module and a fast axis beam combining module; the light emitting module 1 is used for emitting light beams, at least two light emitting modules are stacked along the fast axis direction, the light emitting module 1 comprises light emitting units 10, and the light emitting units 10 of the plurality of light emitting modules 1 are arranged along the slow axis direction; the resonant cavity is used to resonate the light beams emitted by the plurality of light emitting units 10 into an external cavity.
The slow axis beam combination module is arranged in the resonant cavity and is used for combining the beams emitted by the plurality of light-emitting units in the slow axis direction, the beams emitted by the slow axis beam combination module are partially fed back to the light-emitting units 10 along the original light path under the action of the resonant cavity, the plurality of light-emitting units 10 are locked on different wavelengths according to the arrangement positions, a plurality of continuous light-emitting sub-units with wavelengths are spontaneously formed in the single light-emitting unit 10, the plurality of light-emitting sub-units are combined in the slow axis direction under the action of the slow axis beam combination module, and self-organizing resonance and beam combination of the beams in the slow axis direction are realized through the resonant cavity and the slow axis beam combination module; the light beam emitted from the resonant cavity is incident to the fast axis beam combining module and is combined in the fast axis direction under the action of the fast axis beam combining module.
In practical application, under the action of the resonant cavity, the light emitting units 10 of the light emitting modules 1 can form external cavity resonance, the slow axis beam combining module can combine beams emitted by the light emitting units in the slow axis direction, and meanwhile, the beams emitted by the slow axis beam combining module are partially fed back to the light emitting units 10 along an original light path under the action of the resonant cavity, so that the light emitting units 10 are locked on different wavelengths according to the arrangement positions, and a plurality of light emitting sub-units with continuous wavelengths are spontaneously formed in a single light emitting unit 10.
The multiple light emitting sub-units combine beams along the slow axis direction under the action of the slow axis beam combining module, self-organizing resonance and beam combination of the beams in the slow axis direction are realized through the resonant cavity and the slow axis beam combining module, and the quality of the beams in the slow axis direction is greatly improved under the condition that the output power is kept unchanged; the light beams emitted by the resonant cavity are incident to the fast axis beam combining module, and under the action of the fast axis beam combining module, the light beams emitted by the light emitting units 10 are overlapped into one beam in the near field and the far field, and the light beam quality is close to that of the fast axis light beam of the single light emitting unit 10; therefore, beam combination in the fast axis direction is performed on the premise of improving the beam quality in the slow axis direction, so that the beam quality and the light brightness of the semiconductor laser are further improved.
Specifically, the light emitting modules 1 are equidistantly arranged to form an array, and a plurality of light emitting units 10 are uniformly distributed on the diagonal line of the array.
The light emitting unit 10 is a semiconductor laser element, one end of which is an emitting end, the opposite end is a reflecting end, and a gain medium is arranged between the emitting end and the reflecting end; the outgoing end of the light-emitting module 1 is plated with an antireflection film, which is beneficial to the transmission of light beams in a specific wavelength range, and the reflection end is plated with a high reflection film for total reflection of the light beams in the specific wavelength range; the gain medium is a semiconductor material.
The light source also comprises an output coupling mirror 4 which is arranged along the light path, wherein the output coupling mirror 4 can provide partial feedback and output for the light beam in a specific wavelength range; the reflecting end, the gain structure and the output coupling mirror 4 together form the resonant cavity, and the light beam oscillates in the resonant cavity to amplify the light beam.
Specifically, the output coupling mirror 4 is coated with a film with a reflectivity R for a light beam with a specific wavelength, and the reflectivity of the reflective film for all polarized laser beams is kept consistent, and part of the feedback light in the slow axis direction returns along the original light path to form resonance.
Specifically, the reflectance R is preferably 5% or more and 30% or less.
The light emitting module 1 further includes a fast axis collimating element 2, where the fast axis collimating element 2 is correspondingly encapsulated at an exit end of the light emitting unit 10, and is configured to collimate the light beam emitted by the light emitting unit 10 in a fast axis direction, and reduce an emission angle of the light beam in the fast axis direction.
The distance between the fast axis collimation element 2 and the emergent end is f FAC And the focal length of the fast axis collimating element 2 along the fast axis direction of the light emitting unit 10 is f FAC ，f FAC Preferably 0.5-1.2mm, the focal length of the fast axis collimating element 2 in the slow axis direction of the light emitting unit 10 is +.
Specifically, the fast axis collimating element 2 is coated with an antireflection film, which is beneficial to the transmission of light beams in a specific wavelength range.
The light beam emitted by the light emitting unit 10 is collimated by the fast axis collimating element 2 and then enters the slow axis beam combining module.
The slow axis beam combination module comprises a slow axis optical conversion system 3 and a slow axis diffraction optical element 5 which are sequentially arranged along the light path; wherein the light emitting module 1 and the slow-axis diffractive optical element 5 are placed on front and rear focal planes of the slow-axis optical transformation system 3, and the slow-axis optical transformation system 3 can focus the light beam emitted by the light emitting unit 10 onto the surface of the slow-axis diffractive optical element 5 along the slow-axis direction; the diffraction direction of the slow-axis diffractive optical element 5 matches the polarization direction of the light beam for diffracting the light beam emitted from the light emitting unit 10 in the slow-axis direction.
The angles of the different areas of the single light-emitting unit 10 in the slow axis direction focused on the slow axis diffraction optical element 5 through the slow axis optical transformation system 3 are different, due to the diffraction effect of the slow axis diffraction optical element 5 and the gain competition of the whole external cavity, under the combined effect of the slow axis diffraction optical element 5 and the output coupling mirror 4, a plurality of continuous light-emitting subunits can be spontaneously formed inside the single light-emitting unit 10, and are locked on different continuous wavelengths according to the positions, namely, a plurality of light-emitting subunits with continuous spectrums can be spontaneously formed inside the light-emitting unit 10, so that the light beams emitted by the light-emitting unit 10 comprise a plurality of sub-beams with different wavelengths, and the sub-beams realize beam combination in the slow axis direction through the slow axis beam combination module, so that the quality of the light beams in the slow axis direction is greatly improved under the condition of keeping the output power unchanged.
Generally, the semiconductor laser outputs a larger light spot along the slow axis direction, and has a strip shape, a divergence angle is about 12 degrees, and the light beam quality is poor, but under the combined action of the resonant cavity and the slow axis beam combining module, the output light beam is elliptical, and the divergence angle is small, so that the light beam quality in the slow axis direction is greatly improved.
In order to improve the output power, the width of the light emitting area in the slow axis direction may be larger, in general, the greater the width of the slow axis is, the worse the beam quality is, so that the width of the light emitting area in the slow axis direction is rarely 1mm in general, but in the embodiment of the invention, the beam quality in the slow axis direction can be greatly improved by using the combination of the resonant cavity and the slow axis beam combining module, so that even if the width of the light emitting area in the slow axis direction is made larger, the beam with better quality can be obtained.
Specifically, the stripe width of the slow axis direction light-emitting region is 0.1mm-1mm, and the thickness of the fast axis direction light-emitting region is 1.2um-3um.
After passing through the resonant cavity and the slow axis beam combining module, the light beams emitted by the light emitting units 10 are output through the output coupling mirror 4, and the light beams with different wavelengths output by the output coupling mirror 4 are incident into the fast axis beam combining module to be subjected to spectrum combination along the fast axis direction.
The fast axis beam combination module comprises a fast axis optical transformation system 6 and a fast axis diffraction optical element 7 which are sequentially arranged along the light path; the fast-axis diffractive optical element 7 is disposed on the focal plane of the fast-axis optical transformation system 6, so that the fast-axis optical transformation system 6 can focus the light beams with different wavelengths output by the output coupling mirror 4 onto the surface of the fast-axis diffractive optical element 7 along the fast-axis direction.
Since the fast and slow axes of the light beams are orthogonal, the slow-axis diffractive optical element 5 is orthogonal to the diffraction direction of the fast-axis diffractive optical element 7, and the light beam emitted by the semiconductor laser element is polarized light, when the polarization direction of the light beam is matched with the diffraction direction of the slow-axis diffractive optical element 5, the light beam cannot be matched with the diffraction direction of the fast-axis diffractive optical element 7; therefore, a half-wave plate 8 needs to be added between the output coupling mirror 4 and the fast-axis diffractive optical element 7, so that the polarization direction of the light beam after the output coupling mirror 4 is rotated by 90 degrees to match the diffraction direction of the fast-axis diffractive optical element 7; the fast-axis diffraction optical element 7 diffracts and outputs light beams with all wavelengths along the same direction, so as to realize spectrum combination in the fast-axis direction.
In order to satisfy the diffraction conditions of each diffraction element, in the embodiment of the present invention, the parameters of each component need to satisfy the following conditions:
W s is the overall width of the plurality of light emitting units 10 in the slow axis direction;
F s a focal length of the slow axis optical conversion system 3;
d s a scribe line width for the slow axis diffractive optical element 5;
α s a center incident angle of the slow-axis diffractive optical element 5 in the slow-axis direction;
W f is the overall width of the plurality of light emitting units 10 in the fast axis direction;
F f a focal length of the fast axis optical transformation system 6;
d f a scribe line width for the fast axis diffractive optical element 7;
α f the angle of incidence is at the center of the fast-axis diffractive optical element 7 for the fast-axis direction.
Specifically, the slow axis optical conversion system 3 may employ a cylindrical mirror or an aspherical cylindrical mirror or the like to focus the light beam emitted from the light emitting unit 10 in the slow axis direction; the focal length of the slow axis optical transformation system 3 can be selected according to practical requirements.
Specifically, the fast axis optical transformation system 6 may employ a cylindrical mirror or an aspheric cylindrical mirror, etc. to focus the light beam after the output coupling mirror 4 onto the fast axis diffractive optical element 7 along the fast axis direction; the focal length of the fast axis optical transformation system 6 can be selected according to practical requirements.
Specifically, the slow-axis optical conversion system 3 is coated with an antireflection film, which is beneficial to the transmission of light beams in a specific wavelength range.
Specifically, the fast axis optical conversion system 6 is coated with an antireflection film, which is beneficial to the transmission of light beams in a specific wavelength range.
It is understood that the slow-axis diffraction optical element 5 may be a transmissive grating or a reflective grating, and the type of the grating and the reticle density may be selected according to practical requirements.
Specifically, the slow-axis diffractive optical element 5 employs a multilayer dielectric film grating having a reticle density higher than 900 lines/mm.
Likewise, the fast axis diffraction optical element 7 may be a transmissive grating or a reflective grating, and the type and the scribe line density of the grating may be selected according to practical requirements.
Specifically, the fast axis diffractive optical element 7 employs a multilayer dielectric film grating having a reticle density higher than 900 lines/mm.
In a specific embodiment, referring to fig. 5 and 6, both the slow axis diffractive optical element 5 and the fast axis diffractive optical element 7 employ reflective gratings.
The light beams emitted by the light emitting units 10 are focused on the surface of the slow-axis diffraction optical element 5 along the slow-axis direction by the slow-axis optical transformation system 3, the slow-axis diffraction optical element 5 diffracts the light beams emitted by the light emitting units 10 along the slow-axis direction, so that the beam combination of the light emitting units 10 along the slow-axis direction and the self-organizing resonance and beam combination of the single light emitting unit 10 are realized, and the light beams are only reflected along the fast-axis direction due to mismatching of the diffraction directions along the fast-axis direction.
After the light beams are output by the output coupling mirror 4, the polarization direction is rotated by 90 degrees under the action of the half wave plate 8 so as to be matched with the fast axis diffraction optical element 7, the light beams with various wavelengths after the output coupling mirror 4 are focused on the surface of the fast axis diffraction optical element 7 under the action of the fast axis optical transformation system 6, and are output in the same direction after being diffracted by the fast axis diffraction optical element 7, so that the spectrum beam combination in the fast axis direction is realized, and the slow axis direction only plays a role in reflection in the slow axis direction due to the fact that the diffraction directions are not matched.
In another specific embodiment, referring to fig. 7 and 8, the slow axis diffractive optical element 5 employs a transmissive grating, and the fast axis diffractive optical element 7 employs a reflective grating.
The light beam emitted by the light emitting unit 10 is focused on the surface of the slow-axis diffraction optical element 5 along the slow-axis direction by the slow-axis optical transformation system 3, and the incidence direction and the diffraction direction of the light beam are respectively positioned at two sides of the slow-axis diffraction optical element 5 because the slow-axis diffraction optical element 5 is a transmission grating, and the fast-axis direction only plays a role in transmission in the fast-axis direction because the diffraction directions are not matched.
After the light beams are output by the output coupling mirror 4, the polarization direction is rotated by 90 degrees under the action of the half wave plate 8 so as to be matched with the fast axis diffraction optical element 7, the light beams with various wavelengths after the output coupling mirror 4 are focused on the surface of the fast axis diffraction optical element 7 under the action of the fast axis optical transformation system 6, and are output in the same direction after being diffracted by the fast axis diffraction optical element 7, so that the spectrum beam combination in the fast axis direction is realized, and the slow axis direction only plays a role in reflection in the slow axis direction due to the fact that the diffraction directions are not matched.
It will be appreciated that the fast-axis diffractive optical element 7 and the slow-axis diffractive optical element 5 include, but are not limited to, the above combinations, and in other embodiments, the fast-axis diffractive optical element 7 and the slow-axis diffractive optical element 5 may be combined in other ways as actually required to meet the parameter requirements for beam direction, power, etc.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A semiconductor laser, comprising:
the light emitting module (1) is stacked with at least two light emitting modules along the fast axis direction, the light emitting modules (1) comprise light emitting units (10), and the light emitting units (10) of the plurality of light emitting modules (1) are distributed along the slow axis direction;
a resonant cavity for resonating light beams emitted from the plurality of light emitting units (10) into an external cavity;
the slow axis beam combination module is arranged in the resonant cavity and is used for combining the light beams emitted by the light emitting units (10) in the slow axis direction; meanwhile, the light beams emitted by the slow axis beam combining module are partially fed back to the light emitting module (1) along an original light path under the action of the resonant cavity, so that a plurality of light emitting units (10) are locked on different wavelengths according to arrangement positions, a plurality of light emitting sub-units with continuous wavelengths are spontaneously formed in a single light emitting unit (10), and the light emitting sub-units are combined along the slow axis direction under the action of the slow axis beam combining module;
and the fast axis beam combination module is used for combining the beams emitted by the resonant cavity in the fast axis direction.
2. The semiconductor laser according to claim 1, characterized in that one end of the light emitting unit (10) is an exit end, the opposite end is a reflection end, a gain medium is arranged between the exit end and the reflection end;
the device also comprises an output coupling mirror (4), wherein the output coupling mirror (4) is used for providing partial feedback and output for the light beam; the resonant cavity is at least formed by the reflecting end, the gain medium and the output coupling mirror (4).
3. The semiconductor laser according to claim 1, characterized in that the slow axis beam combination module comprises a slow axis optical conversion system (3) and a slow axis diffractive optical element (5) arranged in sequence along an optical path;
the slow axis optical conversion system (3) is used for focusing the light beam emitted by the light emitting unit (10) to the surface of the slow axis diffraction optical element (5) along the slow axis direction.
4. A semiconductor laser according to claim 3, characterized in that the fast axis beam combining module comprises a fast axis optical conversion system (6) and a fast axis diffractive optical element (7) arranged in sequence along the optical path;
the fast axis optical conversion system (6) is used for focusing the light beam emitted by the resonant cavity onto the fast axis diffraction optical element (7) along the fast axis direction, and outputting the light beam along the same direction after being diffracted by the fast axis diffraction optical element (7).
5. A semiconductor laser according to claim 4, characterized in that the slow-axis diffractive optical element (5) and/or the fast-axis diffractive optical element (7) comprise a transmissive grating and a reflective grating.
6. A semiconductor laser according to claim 4, characterized in that the slow-axis diffractive optical element (5) and/or the fast-axis diffractive optical element (7) employ a multilayer dielectric film grating with a scribe line density higher than 900 lines/mm.
7. The semiconductor laser according to claim 1, further comprising a fast axis collimating element (2), the fast axis collimating element (2) being arranged at an exit end of the light emitting unit (10) for collimating a light beam emitted by the light emitting unit (10) in a fast axis direction.
8. The semiconductor laser of claim 4, further comprising a half-wave plate (8) disposed at an incident end of the fast axis beam combining module, wherein a polarization direction of the beam exiting the resonant cavity is rotated 90 degrees through the half-wave plate (8) to match the fast axis beam combining module.
9. A semiconductor laser according to claim 1, characterized in that the thickness of the light emitting region of the light emitting unit (10) in the fast axis direction is 1.2 μm-3 μm and the stripe width in the slow axis direction is 0.1mm-1mm.
10. A semiconductor laser according to claim 2, characterized in that the output coupling mirror (4) is a planar mirror and is coated with a film of predetermined reflectivity R for the output laser light, wherein 5% +.ltoreq.r+.ltoreq.30%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311495870.6A CN117374730A (en) | 2023-11-10 | 2023-11-10 | Semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311495870.6A CN117374730A (en) | 2023-11-10 | 2023-11-10 | Semiconductor laser |
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| CN117374730A true CN117374730A (en) | 2024-01-09 |
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|---|---|---|---|
| CN202311495870.6A Pending CN117374730A (en) | 2023-11-10 | 2023-11-10 | Semiconductor laser |
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| Country | Link |
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| CN (1) | CN117374730A (en) |
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