CN117346911A - Film thermocouple and preparation method thereof - Google Patents
Film thermocouple and preparation method thereof Download PDFInfo
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- CN117346911A CN117346911A CN202311300462.0A CN202311300462A CN117346911A CN 117346911 A CN117346911 A CN 117346911A CN 202311300462 A CN202311300462 A CN 202311300462A CN 117346911 A CN117346911 A CN 117346911A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 253
- 229910052751 metal Inorganic materials 0.000 claims abstract description 247
- 239000002184 metal Substances 0.000 claims abstract description 247
- 239000010409 thin film Substances 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000002131 composite material Substances 0.000 claims abstract description 26
- 239000011241 protective layer Substances 0.000 claims abstract description 16
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 claims description 36
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 30
- 229910000570 Cupronickel Inorganic materials 0.000 claims description 27
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 21
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 229910052697 platinum Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 14
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 12
- 229910000629 Rh alloy Inorganic materials 0.000 claims description 12
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 claims description 12
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 5
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- -1 polyethylene naphthalate Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 18
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- LIXXICXIKUPJBX-UHFFFAOYSA-N [Pt].[Rh].[Pt] Chemical compound [Pt].[Rh].[Pt] LIXXICXIKUPJBX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention relates to the technical field of temperature sensors, in particular to a thin film thermocouple and a preparation method thereof. The thin film thermocouple comprises a substrate, a composite metal film layer and an insulating protective layer, wherein the composite metal film layer is positioned between the substrate and the insulating protective layer; the composite metal film layer comprises a plurality of A metal films and a plurality of B metal films; each A metal film comprises an A bonding pad, an A wire and an A node, wherein the A wire is positioned between the A bonding pad and the A node, each B metal film comprises a B bonding pad, a B wire and a B node, and the B wire is positioned between the B bonding pad and the B node; the A nodes and the B nodes are alternately stacked, a plurality of A bonding pads are stacked, a plurality of A wires are stacked, a plurality of B bonding pads are stacked, and a plurality of B nodes are stacked. The thin film thermocouple has higher test precision and reliability.
Description
Technical Field
The invention relates to the technical field of temperature sensors, in particular to a thin film thermocouple and a preparation method thereof.
Background
The temperature control has very important functions in various fields such as industrial production, equipment operation, agricultural cultivation, environmental monitoring, safety protection and the like. Temperature control relies on high precision and reliable measurement of real-time temperature. For some application scenarios with very small space, the temperature sensor needs to be made thin enough. The thin film thermocouple technology is the most commonly used thin film temperature sensor at present, and the thickness of the thin film temperature sensor can be in a micron level or even in a nanometer level, so that the thin film thermocouple technology is very suitable for measurement requirements with narrow space. The thin film thermocouple in the prior art has low precision and poor reliability, and is easy to cause the failure of a thin film thermocouple device.
In view of this, the present invention has been made.
Disclosure of Invention
An object of the present invention is to provide a thin film thermocouple with higher accuracy and reliability.
The invention further aims to provide a preparation method of the thin film thermocouple, which is safe and efficient, and the obtained thin film thermocouple has high precision and high reliability.
In order to achieve the above object of the present invention, the following technical solutions are specifically adopted:
a thin film thermocouple comprises a substrate, a composite metal film layer and an insulating protective layer, wherein the composite metal film layer is positioned between the substrate and the insulating protective layer; the composite metal film layer comprises a plurality of A metal films and a plurality of B metal films;
each A metal film comprises an A bonding pad, an A wire and an A node, wherein the A bonding pad is connected with the A node through the A wire, each B metal film comprises a B bonding pad, a B wire and a B node, and the B bonding pad is connected with the B node through the B wire; the A node and the B node are alternately stacked, a plurality of A bonding pads are stacked, a plurality of A wires are stacked, a plurality of B bonding pads are stacked, and a plurality of B nodes are stacked.
In one embodiment, the projection of the node a onto the substrate surface and the projection of the node B onto the substrate surface are completely coincident.
In one embodiment, the number of the metal film A and the number of the metal film B are respectively 2-100; the thickness of the single A metal film and the single B metal film is respectively 1 nm-50 mu m.
In one embodiment, the material of the metal film a comprises platinum-rhodium alloy, nickel-chromium-silicon, iron or copper, and the metal film B comprises platinum-rhodium alloy, platinum, nickel-silicon or copper-nickel; or the material of the B metal film comprises platinum-rhodium alloy, nickel-chromium-silicon, iron or copper, and the A metal film comprises platinum-rhodium alloy, platinum, nickel-silicon or copper-nickel.
In one embodiment, the a metal film is platinum rhodium 30, the B metal film is platinum rhodium 6, or the B metal film is platinum rhodium 30, and the a metal film is platinum rhodium 6.
In one embodiment, the a metal film is platinum-rhodium 13, the B metal film is platinum, or the B metal film is platinum-rhodium 13, and the a metal film is platinum.
In one embodiment, the a metal film is a platinum-rhodium 10, the B metal film is a platinum-rhodium-platinum, or the B metal film is a platinum-rhodium 10, and the a metal film is a platinum-rhodium-platinum.
In one embodiment, the a metal film is nickel-chromium, the B metal film is nickel-silicon, or the B metal film is nickel-chromium, and the a metal film is nickel-silicon.
In one embodiment, the a metal film is nickel-chromium-silicon, the B metal film is nickel-silicon, or the B metal film is nickel-chromium-silicon, and the a metal film is nickel-silicon.
In one embodiment, the a metal film is nickel-chromium, the B metal film is copper-nickel, or the B metal film is nickel-chromium, and the a metal film is copper-nickel.
In one embodiment, the a metal film is iron, the B metal film is copper nickel, or the B metal film is iron, and the a metal film is copper nickel.
In one embodiment, the a metal film is copper, the B metal film is copper nickel, or the B metal film is copper, and the a metal film is copper nickel.
In one embodiment, the insulating protection layer is provided with a first through hole and a second through hole; the first through hole is positioned on the upper surface of the A bonding pad; and the second through hole is positioned on the upper surface of the B bonding pad.
In one embodiment, the thickness of the insulating protective layer is 0.1 to 100 μm.
In one embodiment, the substrate comprises at least one of polyethylene naphthalate, polyimide, and polyphenylene sulfide.
In one embodiment, the substrate has a thickness of 0.1 to 100 μm.
The preparation method of the film thermocouple comprises the following steps:
depositing an A metal film raw material on the substrate to form a first A bonding pad, a first A wire and a first A node to obtain a first A metal film;
forming a first B bonding pad and a first B wire on the substrate by depositing a B metal film raw material, and forming a first B node on the upper surface of the first A node to obtain a first B metal film;
depositing an A metal film raw material on the upper surfaces of the first A bonding pad, the first A wire and the first B node to form a second A bonding pad, a second A wire and a second A node, thereby obtaining a second A metal film;
depositing a B metal film raw material on the upper surfaces of the first B bonding pad, the first B wire and a second A node of the second A metal film to form a second B bonding pad, a second B wire and a second B node, so as to obtain a second B metal film;
repeating the preparation steps to prepare a composite metal film layer;
and then bonding the insulating protection layer on the top of the composite metal film layer.
In one embodiment, the deposition means includes at least one of magnetron sputtering, vacuum evaporation, electroplating, and atomic layer deposition.
Compared with the prior art, the invention has the beneficial effects that:
(1) The thin film thermocouple has a specific composite metal film layer structure, a plurality of A nodes and a plurality of B nodes are alternately laminated, and the A nodes and the B nodes form a plurality of contact surfaces, so that the contact area of the A metal thin film and the B metal thin film is increased, one or a part of contact interface is cracked or peeled off, the failure of a device is avoided, and the high precision and the high reliability of the device are further ensured.
(2) The preparation method of the film thermocouple is efficient and safe, and the obtained film thermocouple has higher precision and reliability.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of the overall structure of a thin film thermocouple of the present invention;
FIG. 2 is a schematic structural diagram of a first A metal film according to the present invention;
FIG. 3 is a schematic structural diagram of a first A metal film and a first B metal film according to the present invention;
FIG. 4 is a schematic structural diagram of a second A metal film prepared according to the present invention;
FIG. 5 is a schematic structural diagram of a second B metal film prepared according to the present invention;
FIG. 6 is a graph showing comparison of temperature test of the thin film thermocouple of example 1 of the present invention with that of a standard thermocouple.
Reference numerals:
1-substrate, 2-composite metal film layer, 201-first A metal film, 2011-first A pad, 2012 first A wire, 2013-first A node, 202-first B metal film, 2021-first B pad, 2022-first B wire, 2023-first B node, 203-second A metal film, 2031-second A pad, 2032-second A wire, 2033-second A node, 204-second B metal film, 2041-second B pad, 2042-second B wire, 2043-second B node, 3-insulating protective layer, 301-first via, 302-second via.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only for illustrating the present invention and should not be construed as limiting the scope of the present invention. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The materials or equipment used are conventional products commercially available without the manufacturer's knowledge. In the description of the present invention, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and are not to be construed as indicating or implying relative importance.
In one embodiment, a thin film thermocouple includes a substrate, a composite metal film layer, and an insulating protective layer, the composite metal film layer being located between the substrate and the insulating protective layer; the composite metal film layer comprises a plurality of A metal films and a plurality of B metal films;
each A metal film comprises an A bonding pad, an A wire and an A node, wherein the A bonding pad is connected with the A node through the A wire, each B metal film comprises a B bonding pad, a B wire and a B node, and the B bonding pad is connected with the B node through the B wire; the A node and the B node are alternately stacked, a plurality of A bonding pads are stacked, a plurality of A wires are stacked, a plurality of B bonding pads are stacked, and a plurality of B nodes are stacked.
The film thermocouple has the specific structure, high precision and high reliability. Wherein, a plurality of A pad layer is fixed connection in proper order, and a plurality of A wire is fixed connection in proper order, a plurality of B pad layer is fixed connection in proper order, and adjacent A node and B node are fixed connection.
In one embodiment, the projection of the node a onto the substrate surface and the projection of the node B onto the substrate surface are completely coincident. The thin film thermocouple has a plurality of A nodes and B nodes, and an interface is formed between the adjacent A nodes and B nodes, namely the thin film thermocouple has a plurality of interfaces, and the area of the interface is large, so that the testing precision and the reliability of the thin film thermocouple are improved. Under different temperature conditions, different thermal electromotive forces are generated at a plurality of interfaces of the A metal film and the B metal film. After the calibration is finished, the corresponding temperature value can be obtained by detecting the voltage between the bonding pads A and B.
The thickness and the number of layers of the metal film can be determined according to actual requirements, and in general, the smaller the thickness of each layer of the metal film is, the more the number of layers of the metal film is, the larger the contact area of an interface is, the higher the test precision of the obtained film thermocouple is, and the higher the reliability is; but ensures that the thickness requirements of the device as a whole are met.
In one embodiment, the number of the a metal thin films and the B metal thin films is 2 to 100, respectively, for example, the a metal thin films and the B metal thin films are 5, 10, 15, 20, 30, 40, 50, 60, 70, 80, 90, etc. each independently. In one embodiment, the thickness of the A metal film and the B metal film is 1nm to 50 μm, for example, 1nm, 5nm, 10nm, 20nm, 50nm, 80nm, 100nm, 200nm, 500nm, 1 μm, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, or the like, respectively.
The metal film a and the metal film B are theoretically any two different conductors, but in order to ensure the requirements of stability, reliability, sensitivity and the like, the materials composing the thermocouple must be strictly selected. In one embodiment, the material of the metal film A comprises platinum-rhodium alloy, nickel-chromium-silicon, iron or copper; the B metal film comprises platinum-rhodium alloy, platinum, nickel-silicon or copper-nickel; or the material of the B metal film comprises platinum-rhodium alloy, nickel-chromium-silicon, iron or copper; the A metal film comprises platinum-rhodium alloy, platinum, nickel-silicon or copper-nickel.
In one embodiment, the a metal film is platinum rhodium 30 and the B metal film is platinum rhodium 6; the metal film A is platinum-rhodium 10, and the metal film B is platinum-rhodium-platinum. In one embodiment, the a metal film is nickel chromium and the B metal film is nickel silicon. In one embodiment, the a metal film is nickel chromium and the B metal film is copper nickel. In one embodiment, the a metal film is iron and the B metal film is copper nickel. In one embodiment, the a metal film is copper and the B metal film is copper nickel. In one embodiment, the a metal film is platinum rhodium 13 and the B metal film is platinum. In one embodiment, the a metal film is nickel chromium silicon and the B metal film is nickel silicon.
The invention adopts the A metal film material and the B metal film material to match, thereby ensuring the stability, the reliability and the sensitivity of the finally obtained film thermocouple.
In one embodiment, the B metal film is platinum rhodium 30 and the a metal film is platinum rhodium 6; the metal film B is platinum-rhodium 10, and the metal film A is platinum. In one embodiment, the B metal film is nickel chromium and the a metal film is nickel silicon. In one embodiment, the B metal film is nickel chromium and the a metal film is copper nickel. In one embodiment, the B metal film is iron and the a metal film is copper nickel. In one embodiment, the B metal film is copper and the a metal film is copper nickel. In one embodiment, the B metal film is platinum rhodium 13 and the a metal film is platinum. In one embodiment, the B metal film is nickel chromium silicon and the a metal film is nickel silicon.
In one embodiment, the insulating protection layer is provided with a first through hole and a second through hole; the first through hole is positioned on the upper surface of the A bonding pad; and the second through hole is positioned on the upper surface of the B bonding pad. In the invention, the size of the first through hole is slightly smaller than that of the bonding pad A, and the size of the second through hole is slightly smaller than that of the bonding pad B, so as to protect the periphery of the bonding pad. The material of the insulating protective layer comprises at least one of polyethylene naphthalate (PEN), polyimide (PI) and polyphenylene sulfide (PPS). The thickness of the insulating protective layer is 1 to 100 μm, for example, 1 μm, 2 μm, 5 μm, 10 μm, 15 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, or the like.
In one embodiment, the substrate comprises at least one of polyethylene naphthalate, polyimide, and polyphenylene sulfide.
In one embodiment, the insulating protection layer is made of the same material and has the same thickness as the substrate.
The dimensions, shapes, materials (not limited to metal) of the substrate, the a pad, the B pad, the a node, the B node, the insulating protection layer, etc. are merely illustrative, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements, etc. within the spirit and principles of the present invention should be included in the scope of the present invention.
In another embodiment, the method for preparing the thin film thermocouple comprises the following steps:
depositing an A metal film raw material on the substrate to form a first A bonding pad, a first A wire and a first A node to obtain a first A metal film;
forming a first B bonding pad and a first B wire on the substrate by depositing a B metal film raw material, and forming a first B node on the upper surface of the first A node to obtain a first B metal film;
depositing an A metal film raw material on the upper surfaces of the first A bonding pad, the first A wire and the first B node to form a second A bonding pad, a second A wire and a second A node, thereby obtaining a second A metal film;
depositing a B metal film raw material on the upper surfaces of the first B bonding pad, the first B wire and a second A node of the second A metal film to form a second B bonding pad, a second B wire and a second B node, so as to obtain a second B metal film;
repeating the preparation steps to prepare a composite metal film layer;
and then bonding the insulating protection layer on the top of the composite metal film layer.
The method for preparing the film thermocouple is safe and efficient, and the obtained film thermocouple is high in testing precision and reliability.
In one embodiment, the deposition means includes at least one of magnetron sputtering, vacuum evaporation, electroplating, and atomic layer deposition. The magnetron sputtering, vacuum evaporation, electroplating and atomic layer deposition of the invention can be conventional preparation equipment and deposition conditions in the prior art, so long as the composite metal film layer can be obtained.
In one embodiment, the sputtering power ranges of the metal film A and the metal film B are 30W to 100W, respectively, and the sputtering air pressure is 0.4 Pa to 1.5Pa. When the sputtering power is too large, the film deposition rate is too fast, the film thickness is difficult to control, and defects such as voids, surface holes, and the like are easily generated: when the sputtering power is too small, the film deposition efficiency is too low, the sputtering reaction is not stable enough, flame extinction is easily caused along with the fluctuation of Ar gas flow, and a large amount of energy sources are wasted.
The following is a further explanation in connection with specific examples.
Example 1
A thin film thermocouple, as shown in fig. 1, comprises a substrate 1, a composite metal film layer 2 and an insulating protection layer, wherein the composite metal film layer 2 is positioned between the substrate 1 and the insulating protection layer 3; the composite metal film layer 2 comprises 5A metal films and 5B metal films;
each A metal film comprises an A bonding pad, an A wire and an A node, wherein the A bonding pad is connected with the A node through the A wire, each B metal film comprises a B bonding pad, a B wire and a B node, and the B bonding pad is connected with the B node through the B wire; the A node and the B node are alternately stacked, a plurality of A bonding pads are stacked, a plurality of A wires are stacked, a plurality of B bonding pads are stacked, and a plurality of B nodes are stacked;
the projection of the node A on the surface of the substrate 1 and the projection of the node B on the surface of the substrate 1 are completely coincident.
The thickness of the single metal film A and the thickness of the single metal film B are respectively 1 mu m;
the metal film A is copper, and the metal film B is copper nickel;
the insulating protective layer is provided with a first through hole 301 and a second through hole 302; the first through hole 301 is located on the upper surface of the a pad; the second through hole 302 is located on the upper surface of the B pad. The insulating protective layer is made of PEN and has a thickness of 10 mu m;
the substrate 1 is made of PEN and has a thickness of 10 μm.
The thin film thermocouple of the present example was prepared by means of magnetron sputtering, comprising the steps of:
magnetron sputtering conditions: when a metal film (copper film) is plated, the sputtering power is 50W, and the sputtering air pressure is 1Pa; when a B metal film (copper-nickel film) is plated, the sputtering power is 40W, and the sputtering air pressure is 0.5Pa; the substrate 1 was heated at 40 ℃.
A metal film raw material a is deposited on the upper surface of the flat substrate 1, and is copper, so that a first a pad 2011, a first a wire 2012 and a first a node 2013 are formed, and the first a pad 2011 and the first a node 2013 are electrically connected through the first a wire 2012, so as to obtain a first a metal film 201, as shown in fig. 2.
And then, a first B bonding pad 2021 and a first B wire 2022 are formed on the upper surface of the substrate 1 by depositing a B metal film raw material which is copper-nickel alloy, a first B node 2023 is formed on the upper surface of the first A node 2013, the first B bonding pad 2021 and the first B node 2023 are electrically connected through the first B wire 2022, and the projection of the first A node 2013 on the surface of the substrate 1 and the projection of the first B node 2023 on the surface of the substrate 1 are completely overlapped to form an interface, so that the first B metal film 202 is obtained, as shown in fig. 3.
Depositing a metal film material on the upper surfaces of the first a bonding pad 2011, the first a wire 2012 and the first B node 2023 to form a second a bonding pad 2031, a second a wire 2032 and a second a node 2033, wherein the second a bonding pad 2031 and the second a node 2033 are electrically connected through the second a wire 2032, the second a bonding pad 2031 completely covers the first a bonding pad 2011 (forms electrical connection), and the second a wire 2032 completely covers the first a wire 2012 (forms electrical connection); the second a node 2033 completely covers the first B node 2023 (forming an electrical connection) forming an interface, resulting in a second a metal film 203, as shown in fig. 4.
And depositing a B metal film material on the upper surfaces of the B pad 2021 and the first B wire 2022 and the second a node 3033 of the second a metal film 203 to form a second B pad 2041, a second B wire 2042 and a second B node 2043, wherein the second B pad 2041 completely covers the first B pad 2021 (forms an electrical connection), the second B wire 2042 completely covers the first B wire 2022 (forms an electrical connection), the second B node 2043 completely covers the first B node 2023 (forms an electrical connection), and the interface is formed again to obtain the second B metal film 204, as shown in fig. 5.
The preparation steps are repeated to prepare the composite metal film layer 2.
And then adhering the insulating protection layer 3 on the top of the composite metal film layer 2.
A schematic structure of the thin film thermocouple is shown in fig. 1.
Example 2
A film thermocouple was prepared in the same manner as in example 1 except that 10 metal films A were used and 10 metal films B were used.
Example 3
A film thermocouple, the number of metal films except for A is 10, and the number of metal films B is 10; the thickness of the metal film A was 0.5. Mu.m, and the thickness of the metal film B was 0.5. Mu.m, except that the conditions were the same as in example 1.
Example 4
A film thermocouple, wherein the number of the metal films B is 20 except for 20 metal films A; the thickness of the A metal film was 0.1. Mu.m, and the thickness of the B metal film was 0.1. Mu.m, otherwise the same as in example 1.
Comparative example 1
A thin film thermocouple, except for 1 metal film A, 1 metal film B; the thickness of the A metal film was 1. Mu.m, and the thickness of the B metal film was 1. Mu.m, except that the conditions were the same as in example 1.
Test example 1
An experimental test was performed using the thin film thermocouple manufactured in example 1 as an example, the thin film thermocouple and a commercial standard thermocouple (large size) were fixed together, and then immersed in an oil bath, the temperature of the oil bath was gradually increased from-30 ℃ to 130 ℃, the temperature increasing step length was 5 ℃, and the temperature at each temperature point remained at least 5min after the temperature was stabilized. As shown in fig. 6, the thin film thermocouple of example 1 of the present invention showed almost coincident temperature values with the standard thermocouple, the temperature deviation range was ±0.4 ℃, and the thin film thermocouple of the present invention had higher accuracy.
Test example 2
The thin film thermocouple prepared in example 1 was boiled in water at 100℃for 500 hours, and then the test in test example 1 was repeated, and the test result was shown in FIG. 6, with a temperature deviation range of.+ -. 0.4 ℃.
Test example 3
The thin film thermocouple prepared in example 1 was boiled in water at 100℃for 1000 hours, and then the test in test example 1 was repeated, and the test results are shown in FIG. 6.
The thin film thermocouples prepared in examples 2 to 4 and comparative example 1 were tested in test examples 1, 2 and 3, respectively, to obtain temperature deviation ranges, and the test results are shown in table 1.
Table 1 test results of each thin film thermocouple
From the above, the thin film thermocouple according to the embodiments of the present invention has higher accuracy and reliability. The thin film thermocouple obtained in comparative example 1 was relatively poor in accuracy and reliability.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. A thin film thermocouple, which is characterized by comprising a substrate, a composite metal film layer and an insulating protective layer, wherein the composite metal film layer is positioned between the substrate and the insulating protective layer; the composite metal film layer comprises a plurality of A metal films and a plurality of B metal films;
each A metal film comprises an A bonding pad, an A wire and an A node, wherein the A bonding pad is connected with the A node through the A wire, each B metal film comprises a B bonding pad, a B wire and a B node, and the B bonding pad is connected with the B node through the B wire; the A node and the B node are alternately stacked, a plurality of A bonding pads are stacked, a plurality of A wires are stacked, a plurality of B bonding pads are stacked, and a plurality of B nodes are stacked.
2. The thin film thermocouple of claim 1, wherein the projection of node a onto the substrate surface and the projection of node B onto the substrate surface are fully coincident.
3. The thin film thermocouple according to claim 1, wherein the number of the a metal thin films and the B metal thin films is 2 to 100, respectively;
the thickness of the single A metal film and the single B metal film is respectively 1 nm-50 mu m.
4. The thin film thermocouple of claim 1, wherein the a metal thin film comprises platinum-rhodium alloy, nickel-chromium-silicon, iron or copper, and the B metal thin film comprises platinum-rhodium alloy, platinum, nickel-silicon or copper-nickel; or the material of the B metal film comprises platinum-rhodium alloy, nickel-chromium-silicon, iron or copper, and the A metal film comprises platinum-rhodium alloy, platinum, nickel-silicon or copper-nickel.
5. The thin film thermocouple of claim 1 or 4, comprising at least one of the following features (1) to (8):
(1) The metal film A is a platinum-rhodium 30, the metal film B is a platinum-rhodium 6, or the metal film B is a platinum-rhodium 30, and the metal film A is a platinum-rhodium 6;
(2) The metal film A is platinum-rhodium 13, the metal film B is platinum, or the metal film B is platinum-rhodium 13, and the metal film A is platinum;
(3) The metal film A is platinum-rhodium 10, the metal film B is platinum, or the metal film B is platinum-rhodium 10, and the metal film A is platinum;
(4) The metal film A is nickel-chromium, the metal film B is nickel-silicon, or the metal film B is nickel-chromium, and the metal film A is nickel-silicon;
(5) The metal film A is nickel-chromium-silicon, the metal film B is nickel-silicon, or the metal film B is nickel-chromium-silicon, and the metal film A is nickel-silicon;
(6) The metal film A is nickel-chromium, the metal film B is copper-nickel, or the metal film B is nickel-chromium, and the metal film A is copper-nickel;
(7) The metal film A is iron, the metal film B is copper nickel, or the metal film B is iron, and the metal film A is copper nickel;
(8) The A metal film is copper, the B metal film is copper-nickel, or the B metal film is copper, and the A metal film is copper-nickel.
6. The thin film thermocouple of claim 1, wherein the insulating protective layer is provided with a first through hole and a second through hole; the first through hole is positioned on the upper surface of the A bonding pad; and the second through hole is positioned on the upper surface of the B bonding pad.
7. The thin film thermocouple of claim 6, wherein the insulating protective layer has a thickness of 0.1 to 100 μm.
8. The thin film thermocouple of claim 1, comprising at least one of the following features (1) to (2):
(1) The substrate is made of at least one of polyethylene naphthalate, polyimide and polyphenylene sulfide;
(2) The thickness of the substrate is 0.1-100 mu m.
9. The method for manufacturing a thin film thermocouple according to any one of claims 1 to 8, comprising the steps of:
depositing an A metal film raw material on the substrate to form a first A bonding pad, a first A wire and a first A node to obtain a first A metal film;
forming a first B bonding pad and a first B wire on the substrate by depositing a B metal film raw material, and forming a first B node on the upper surface of the first A node to obtain a first B metal film;
depositing an A metal film raw material on the upper surfaces of the first A bonding pad, the first A wire and the first B node to form a second A bonding pad, a second A wire and a second A node, thereby obtaining a second A metal film;
depositing a B metal film raw material on the upper surfaces of the first B bonding pad, the first B wire and a second A node of the second A metal film to form a second B bonding pad, a second B wire and a second B node, so as to obtain a second B metal film;
repeating the preparation method to prepare a composite metal film layer;
and then bonding the insulating protection layer on the top of the composite metal film layer.
10. The method for preparing a thin film thermocouple of claim 9, wherein the deposition means comprises at least one of magnetron sputtering, vacuum evaporation, electroplating and atomic layer deposition.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311300462.0A CN117346911A (en) | 2023-10-09 | 2023-10-09 | Film thermocouple and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311300462.0A CN117346911A (en) | 2023-10-09 | 2023-10-09 | Film thermocouple and preparation method thereof |
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| CN202311300462.0A Pending CN117346911A (en) | 2023-10-09 | 2023-10-09 | Film thermocouple and preparation method thereof |
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| CN (1) | CN117346911A (en) |
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2023
- 2023-10-09 CN CN202311300462.0A patent/CN117346911A/en active Pending
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