CN117228966A - Support glass substrate and laminated substrate using same - Google Patents
Support glass substrate and laminated substrate using same Download PDFInfo
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- CN117228966A CN117228966A CN202311199194.8A CN202311199194A CN117228966A CN 117228966 A CN117228966 A CN 117228966A CN 202311199194 A CN202311199194 A CN 202311199194A CN 117228966 A CN117228966 A CN 117228966A
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- supporting glass
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- 239000000758 substrate Substances 0.000 title claims abstract description 324
- 239000011521 glass Substances 0.000 title claims abstract description 245
- 230000001902 propagating effect Effects 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 44
- 238000012545 processing Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 33
- 239000003566 sealing material Substances 0.000 claims description 13
- 238000011282 treatment Methods 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 239000006066 glass batch Substances 0.000 description 24
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 23
- 239000012790 adhesive layer Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 20
- 239000000203 mixture Substances 0.000 description 17
- 239000006060 molten glass Substances 0.000 description 16
- 238000005498 polishing Methods 0.000 description 15
- 238000007500 overflow downdraw method Methods 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 229910006404 SnO 2 Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 5
- 238000005342 ion exchange Methods 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910018068 Li 2 O Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
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- 239000000975 dye Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 238000005452 bending Methods 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
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- 238000003280 down draw process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 238000012858 packaging process Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Compositions (AREA)
- Laminated Bodies (AREA)
- Magnetic Record Carriers (AREA)
Abstract
The present application relates to a support glass substrate for supporting a processed substrate, wherein an information recognition unit having a dot as a structural unit is provided on a surface of the support glass substrate, and an average length of a crack propagating from the dot in a surface direction is 350 [ mu ] m or less, and a laminated substrate using the support glass substrate.
Description
The application is as follows: 201880054592.1, filing date: 2018.6.28, name of application: PCT/JP2018/024617 applied to "support glass substrate and laminated substrate using the same".
Technical Field
The present application relates to a supporting glass substrate for supporting a processed substrate and a laminated substrate using the same, and more particularly, to a supporting glass substrate for supporting a processed substrate in a manufacturing process of a semiconductor package (semiconductor device) and a laminated substrate using the same.
Background
Portable electronic devices such as mobile phones, notebook computers, and PDA (Personal Data Assistance) are required to be miniaturized and lightweight. With this, the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips is a problem. In recent years, therefore, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, i.e., by stacking semiconductor chips on each other and wiring connection between the semiconductor chips.
In addition, a conventional Wafer Level Package (WLP) is manufactured by forming bumps in a wafer state, and then dicing the wafer to singulate the wafer. However, the conventional WLP has a problem that the number of pins is not easily increased and the semiconductor chip is easily broken because the WLP is mounted in a state where the back surface of the semiconductor chip is exposed.
Therefore, as a new WLP, a diffusion (fan out) type WLP is proposed. The Fan out WLP can increase the number of pins, and can prevent the semiconductor chip from being broken by protecting the end portion of the semiconductor chip.
For the fan out type WLP, there are fabrication methods of the first chip type and the second chip type. The chip-type semiconductor device includes, for example, a step of molding a plurality of semiconductor chips with a resin sealing material to form a processed substrate and then wiring the processed substrate on one surface thereof; and a step of forming solder bumps. The post-chip type semiconductor device includes, for example, a step of forming a solder bump after forming a processed substrate by molding a plurality of semiconductor chips with a resin sealing material after providing a wiring layer on a supporting substrate.
In addition, a semiconductor package called a Panel Level Package (PLP) has also been studied recently. In PLP, in order to increase the number of obtained semiconductor packages per 1 support substrate and to reduce manufacturing costs, a rectangular-shaped support substrate other than a wafer-shaped support substrate is used.
In the manufacturing process of these semiconductor packages, the sealing material may be deformed by the heat treatment at about 200 ℃, and the processed substrate may be warped. When warpage occurs in the processed substrate, it becomes difficult to process one surface of the substrate and to precisely form the solder bump.
In view of these circumstances, in order to suppress warpage of the processed substrate, use of a glass substrate for supporting the processed substrate has been studied (see patent document 1).
The glass substrate is easy to smooth the surface and has rigidity. Thus, when a glass substrate is used as the support substrate, the processed substrate can be firmly and accurately supported. In addition, the glass substrate is likely to transmit light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be easily fixed by providing an adhesive layer such as an ultraviolet curable adhesive. Further, by providing a release layer or the like that absorbs infrared rays, the processed substrate can be easily separated. As another embodiment, an adhesive layer or the like is provided by using an ultraviolet curable adhesive tape or the like, so that the processed substrate can be easily fixed and detached.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2015-78113
Patent document 2: international publication No. 2016/136348
Disclosure of Invention
Problems to be solved by the invention
However, when the information recognition portion (mark) of the two-dimensional code is formed (marked) on the surface of the supporting glass substrate, production information and the like of the supporting glass substrate (for example, the size, linear thermal expansion coefficient, lot, overall plate thickness deviation, manufacturer name, seller name) can be managed and recognized. The information recognition unit is generally formed in the peripheral edge region of the support glass substrate, and recognizes the information by human eyes in the form of characters, marks, or the like. In addition, there is a case where the information recognition portion for supporting the glass substrate is automatically recognized by an optical element such as a CCD camera, and in this case, it is required that the information recognition portion can accurately recognize the information even in an automated process.
As a method of forming the information identifying portion, for example, a method of forming the information identifying portion by irradiating a supporting glass substrate with laser light and expanding a crack (mainly a crack in a thickness direction) in the supporting glass substrate by thermal shock before and after irradiation thereof is known (see patent document 2).
However, in this method, in the step of manufacturing the fan out type WLP and PLP, when the laminated substrate is heated to cure the resin of the sealing material, the support glass substrate is easily broken due to a slight difference in thermal expansion coefficient between the processed substrate and the support glass substrate when the laminated substrate is cooled to room temperature after the laminated substrate is heated.
The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a supporting glass substrate which is less likely to be damaged in a process for producing a fan out-type WLP and PLP even when an information identifying portion is formed on the surface.
Means for solving the problems
As a result of repeating various experiments, the present inventors have found that the above technical problems can be solved by limiting the length of a crack generated from a point constituting an information identifying part to a predetermined value or less, and have proposed the present invention. That is, the support glass substrate of the present invention is a support glass substrate for supporting a processed substrate, and is characterized in that an information recognition portion having a point as a structural unit is provided on a surface of the support glass substrate, and a maximum length of a crack propagating from the point in a surface direction is 350 μm or less. Here, the "maximum length in the surface direction of the crack extending from the point" is a length obtained by measuring the length along the shape of the crack when observed by an optical microscope, and is not a length obtained by connecting the start point and the end point of the crack and measuring the distance between the two points, but is also a length obtained by measuring the length of the crack in the thickness direction. The maximum length of the crack extending from the point in the surface direction can be controlled by the irradiation condition (pulse width, irradiation diameter, irradiation speed, etc.) of the pulse laser.
In addition, the maximum length of the crack extending from the point of the support glass substrate in the surface direction is preferably 0.1 μm or more.
In addition, the point for supporting the glass substrate of the present invention is preferably formed by an annular groove. In this way, dots are easily formed by laser ablation (evaporation of glass based on pulsed laser irradiation). As a result, when forming dots by irradiating pulsed laser light, by controlling irradiation conditions, dots can be formed without accumulating excessive heat in the glass of the irradiation region.
In the supporting glass substrate of the present invention, it is preferable that the average linear thermal expansion coefficient is 30×10 in the temperature range of 30 to 380 ℃ -7 Higher than/DEG C and 165 multiplied by 10 -7 And/or lower. In this way, when the ratio of the semiconductor chip to the sealing material is changed in the processing substrate, it is easy to strictly match the thermal expansion coefficients of the processing substrate and the supporting glass substrate. Further, when the coefficients of thermal expansion of the two are matched, it is easy to suppress a dimensional change (in particular, warp deformation) of the processing substrate at the time of processing. As a result, the warpage of the support glass substrate can be suppressed, and breakage of the support glass substrate starting from a crack in the information identifying portion of the support glass substrate can be reduced. The "average linear thermal expansion coefficient in the temperature range of 30 to 380 ℃ can be measured by an dilatometer.
The supporting glass substrate of the present invention preferably has a wafer shape or a substantially disk shape having a diameter of 100 to 500mm, and has a plate thickness of less than 2.0mm, and an overall plate thickness deviation of 5 μm or less. The "total thickness deviation" is the difference between the maximum and minimum thicknesses of the entire support glass substrate, and can be measured, for example, by SBW-331ML/d manufactured by KOBELO scientific research. The "warpage" refers to the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane of the entire supporting glass substrate and the absolute value of the lowest point and the least squares focal plane, and can be measured by, for example, a Bow/Warp measuring device SBW-331ML/d manufactured by kobeloc.
The supporting glass substrate of the present invention preferably has a quadrilateral shape with 300mm or more sides, and has a plate thickness of less than 2.0mm, and an overall plate thickness variation of 10 μm or less.
The laminated substrate of the present invention preferably includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and the supporting glass substrate is the supporting glass substrate described above.
In the laminated substrate of the present invention, it is preferable that the processed substrate has at least a semiconductor chip molded with a sealing material.
The method for manufacturing a semiconductor package according to the present invention preferably includes: preparing a laminated substrate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate; and a step of processing the processed substrate, wherein the support glass substrate is the support glass substrate.
In the method for manufacturing a semiconductor package of the present invention, the processing preferably includes a step of wiring one surface of the processed substrate.
In the method for manufacturing a semiconductor package according to the present invention, the processing preferably includes a step of forming solder bumps on one surface of the processed substrate.
The glass substrate is characterized in that an information recognition unit having a dot as a structural unit is provided on the surface, and the maximum length of a crack extending from the dot in the surface direction is 350 [ mu ] m or less.
An embodiment of the present invention will be described below with reference to fig. 1 to 4. Fig. 1 is a plan view of a support glass substrate 1 according to an embodiment of the present invention. The supporting glass substrate 1 can be used for supporting a processing substrate. As shown in the figure, the support glass substrate 1 has an information recognition portion 3 formed on a surface 2 thereof. In the present embodiment, the support glass substrate 1 has a substantially disk shape. Further, a notch 4 is provided as a positioning portion for the peripheral edge portion 1a of the support glass substrate 1, and an information recognition portion 3 is formed in the vicinity of the notch 4.
As shown in fig. 2, the information identifying unit 3 includes, for example, a combination of a plurality of characters 5 (the characters 5 here include ideograms such as numerals at least as shown in fig. 2). Each character 5 is constituted by a plurality of dots 6 as shown in an enlarged portion a in fig. 2. When the circumferential center position C3 of the notch 4 is used as a reference, the phase θ (fig. 2) of the circumferential center position C4 of the information identifying unit 3 is set to 2 ° or more and 10 ° or less.
Further, each point 6 will be described. Fig. 4 shows the point 6 shown in fig. 3 at a magnified scale, and as shown in the figure, each point 6 is formed by an annular groove 7. Therefore, each dot 6 constituting the character 5 is recognized as a ring (fig. 3 and 4). In the present embodiment, the groove 7 is annular. The outer peripheral edge and the inner peripheral edge of the groove 7 are both circular. Thus, in this case, the width dimension of the groove 7 is constant over the entire circumference.
The crack 8 propagates from the annular groove 7, but the maximum length of the crack 8 in the surface direction is 0.5 to 10 μm.
Drawings
Fig. 1 is a schematic plan view showing an example of a supporting glass substrate according to the present invention.
Fig. 2 is an enlarged view of an essential part of the support glass substrate shown in fig. 1.
Fig. 3 is an enlarged view of a portion a of the support glass substrate shown in fig. 2.
Fig. 4 is an enlarged view of a portion B of the support glass substrate shown in fig. 3.
Fig. 5 is a schematic perspective view showing an example of the laminated substrate of the present invention.
Fig. 6 is a schematic cross-sectional view showing a chip-first type manufacturing process of the fan out type WLP.
FIG. 7 is a photomicrograph of sample No.2 of the example.
FIG. 8 is a photomicrograph of sample No.11 of the comparative example.
Detailed Description
The support glass substrate of the present invention includes an information recognition unit having a dot as a structural unit on a surface of the support glass substrate.
The information recognition unit has 1 or more elements selected from characters, marks, two-dimensional codes, and figures, and the elements are composed of a plurality of points. The preferable information identifying unit displays at least 1 information selected from the group consisting of the size of the supporting glass substrate, the linear thermal expansion coefficient, the lot, the thickness deviation rate, the manufacturer name, the seller name, and the material code. The term "dimension" as used herein is defined to include the thickness dimension, the outer diameter dimension, the size of the notch portion, and the like of the supporting glass substrate.
The maximum length of the crack extending from the point of the supporting glass substrate in the surface direction is 350 μm or less, preferably 300 μm or less, 250 μm or less, 0.1 to 180 μm, 0.3 to 100 μm, 0.3 to 50 μm, 0.5 to 30 μm, 0.5 to 20 μm, 0.8 to 10 μm, and particularly 1 to 5 μm. If the maximum length of the crack in the surface direction is too large, breakage of the supporting glass substrate is likely to occur in the manufacturing process of the fan out type WLP and PLP. If the cracks in the surface direction generated from the dots are completely eliminated, breakage of the supporting glass substrate is less likely to occur in the steps of manufacturing the fan out WLP and PLP, but in this case, the dots are less likely to be formed in a short time by laser ablation, and the formation efficiency of the information recognition portion is extremely lowered.
In the supporting glass substrate of the present invention, the maximum length of the crack extending from the point in the thickness direction is preferably 200 μm or less, 100 μm or less, 50 μm or less, 30 μm or less, 20 μm or less, 10 μm or less, particularly 5 μm or less. If the maximum length of the crack in the thickness direction is too large, breakage of the supporting glass substrate is likely to occur in the manufacturing process of the fan out type WLP and PLP.
The outer diameter of the dot is preferably 0.05 to 0.20mm, 0.07 to 0.13mm or less, particularly 0.09 to 0.11mm. When the outer diameter of the dot is too small, the visibility of the information identifying part is liable to be lowered. On the other hand, when the outer diameter dimension of the dots is too large, the strength of the supporting glass substrate is easily ensured.
The center-to-center spacing between adjacent dots is preferably 0.06 to 0.25mm. When the center-to-center distance between adjacent points is too small, the strength of the supporting glass substrate is easily ensured. On the other hand, when the center-to-center distance between mutually adjacent points is too large, the visibility of the information identifying portion is liable to be lowered.
The information recognition portion may be formed by various methods, and in the present invention, it is preferable to form the information recognition portion by irradiating pulsed laser light and ablating glass in the irradiation region, in other words, by laser ablation. Thus, ablation can be generated without accumulating excessive heat in the glass in the irradiation region. As a result, not only the length of the crack in the thickness direction but also the length of the crack in the surface direction extending from the point can be reduced.
In the case of forming the information identifying portion by laser ablation, the irradiation condition of the laser light is not particularly limited, and for example, the pulse width of the pulse laser light is set to be in the picosecond order, preferably in the femtosecond order, and more preferably in the range of 10fs to 500000fs (500 ps). The wavelength of the pulse laser is preferably 200nm to 2500nm, and the repetition frequency is preferably 1Hz to 1G (giga) Hz. The beam diameter of the pulsed laser is preferably 1 μm or more and 100 μm or less, and the scanning speed is preferably 1mm/s or more and 800mm/s or less. When the pulse width of the pulse laser is too large, thermal strain is likely to occur during laser irradiation.
The information identifying unit preferably has a dot as a structural unit, and the dot is preferably formed as an annular groove. In this way, when the dots are formed as annular grooves, the area surrounded by the annular grooves (the area further inside than the grooves) is left without being removed by the laser light, and therefore, the area provided with the information identifying portion can be prevented from being reduced in strength as much as possible. In addition, if the groove is annular, the visibility does not deteriorate to a large extent even if the width of the groove is reduced as long as the outer diameter is not changed. Accordingly, if the outer diameter of the groove is not changed but the width is reduced, the volume of the region inside the groove can be increased accordingly, and thus, the required strength can be ensured while ensuring the visibility.
The depth dimension of the grooves forming the dots is preferably 2 to 30 μm. When the depth of the groove is too small, the visibility of the information identifying portion is liable to be lowered. On the other hand, when the depth dimension of the groove is excessively large, the strength of the supporting glass substrate is easily ensured.
The Young's modulus of the support glass substrate is preferably 60GPa or more, 65GPa or more, 70GPa or more, particularly 75 to 130GPa. When the ratio of semiconductor chips in the processed substrate is small and the ratio of the sealing material is large, the rigidity of the entire laminated substrate is lowered, and the processed substrate is liable to warp in the processing step. Therefore, when the young's modulus of the supporting glass substrate is increased, warpage of the processed substrate is easily reduced, and breakage of the supporting glass substrate starting from a crack in the information identifying portion of the supporting glass substrate can be reduced.
The thermal expansion coefficient of the supporting glass substrate is preferably limited in such a manner as to match the thermal expansion coefficient of the processed substrate. Specifically, when the ratio of semiconductor chips in the processed substrate is small and the ratio of the sealing material is large, the thermal expansion coefficient of the supporting glass substrate is preferably increased, whereas when the ratio of semiconductor chips in the processed substrate is large and the ratio of the sealing material is small, the thermal expansion coefficient of the supporting glass substrate is preferably decreased.
The average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30-380 ℃ is limited to 30 multiplied by 10 -7 Not less than 50X 10 per DEG C -7 In the case of/. Degree.C, siO is preferably contained in mass% as the glass composition 2 55％～75％、Al 2 O 3 15％～30％、Li 2 O 0.1％～6％、Na 2 O+K 2 O(Na 2 O and K 2 O) 0 to 8%, mgo+cao+sro+bao (MgO, caO, srO and BaO) 0 to 10%, and preferably contains SiO 2 55％～75％、Al 2 O 3 10％～30％、Li 2 O+Na 2 O+K 2 O(Li 2 O、Na 2 O and K 2 Total amount of O) of 0 to 0.3%, mgO+CaO+SrO+BaO of 5 to 20%, and further preferably contains SiO 2 55％～68％、Al 2 O 3 12％～25％、B 2 O 3 0 to 15% of MgO+CaO+SrO+BaO 5 to 30%, and preferably contains SiO in mass percent 2 65％～75％、Al 2 O 3 1％～10％、B 2 O 3 10％～20％、Li 2 O 0％～3％、Na 2 O+K 2 3 to 9 percent of O and 0 to 5 percent of MgO+CaO+SrO+BaO. The average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30-380 ℃ is limited to 50 x 10 -7 Not less than 70X 10 per DEG C -7 In the case of/. Degree.C, siO is preferably contained in mass% as the glass composition 2 55％～75％、Al 2 O 3 3％～15％、B 2 O 3 5％～20％、MgO 0％～5％、CaO 0％～10％、SrO 0％～5％、BaO 0％～5％、ZnO 0％～5％、Na 2 O 5％～15％、K 2 O0-10%, more preferably SiO 2 64％～71％、Al 2 O 3 5％～10％、B 2 O 3 8％～15％、MgO 0％～5％、CaO0％～6％、SrO 0％～3％、BaO 0％～3％、ZnO 0％～3％、Na 2 O 5％～15％、K 2 O0-5%. The average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30-380 ℃ is limited to 70 x 10 -7 At least 85×10 and at least/DEG C -7 When the temperature is not higher than/DEG C, the glass composition preferably contains SiO in mass% 2 60％～75％、Al 2 O 3 5％～15％、B 2 O 3 5％～20％、MgO0％～5％、CaO 0％～10％、SrO 0％～5％、BaO 0％～5％、ZnO 0％～5％、Na 2 O7％～16％、K 2 O0-8%, more preferably SiO 2 60％～68％、Al 2 O 3 5％～15％、B 2 O 3 5％～20％、MgO 0％～5％、CaO 0％～10％、SrO 0％～3％、BaO 0％～3％、ZnO0％～3％、Na 2 O 8％～16％、K 2 O0-3%. The average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30-380 ℃ is limited to 70 x 10 -7 At least 85×10 and at least/DEG C -7 When the temperature is not higher than/DEG C, the glass composition preferably contains SiO in mass% 2 10％～60％、Al 2 O 3 0％～8％、B 2 O 3 0％～20％、BaO 10％～40％、TiO 2 +La 2 O 3 3% -30%. The average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30-380 ℃ is limited to 50 x 10 -7 At least 85×10 and at least/DEG C -7 When the temperature is not higher than/DEG C, the glass composition preferably contains SiO in mass% 2 45％～65％、Al 2 O 3 0％～15％、B 2 O 3 0％～20％、MgO 0％～3％、CaO 1％～20％、SrO 0％～20％、BaO 0％～30％、ZnO 0％～5％、ZrO 2 0％～10％、TiO 2 0％～20％、Nb 2 O 5 0％～20％、La 2 O 3 0％～30％、Na 2 O 0％～5％、K 2 O0-10%, more preferably SiO 2 45％～60％、Al 2 O 3 6％～13％、B 2 O 3 0 to 5 percent of MgO, 0 to 3 percent of CaO, 1 to 5 percent of CaO, 10 to 20 percent of SrO and 15 to 30 percent of BaO. Further, siO is more preferably contained 2 20％～60％、B 2 O 3 0％～20％、CaO 3％～20％、SrO 0％～3％、BaO 5％～20％、ZrO 2 0％～10％、TiO 2 0％～20％、Nb 2 O 5 0％～20％、La 2 O 3 0％～30％、Na 2 O 0％～5％、K 2 O0-10%. The average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30-380 ℃ is limited to be more than 85 multiplied by 10 -7 At a temperature of 120X 10 -7 When the temperature is not higher than/DEG C, the glass composition preferably contains SiO in mass% 2 55％～70％、Al 2 O 3 3％～13％、B 2 O 3 2％～8％、MgO 0％～5％、CaO 0％～10％、SrO 0％～5％、BaO 0％～5％、ZnO0％～5％、Na 2 O 10％～21％、K 2 O0-5%. The average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30-380 ℃ is limited to be more than 120 multiplied by 10 -7 At a temperature of 165X 10 -7 In the case of not more than/DEG C, the glass composition preferably contains SiO in mass% 2 53％～65％、Al 2 O 3 3％～13％、B 2 O 3 0％～5％、MgO 0.1％～6％、CaO 0％～10％、SrO 0％～5％、BaO 0％～5％、ZnO 0％～5％、Na 2 O+K 2 O 20％～40％、Na 2 O 12％～21％、K 2 7% -21% of O. In this way, the thermal expansion coefficient is easily limited to the control target range, and the devitrification resistance is improved, so that it is easy to manufacture the supporting glass substrate having small overall plate thickness variation.
The liquid phase temperature of the supporting glass substrate is preferably less than 1150 DEG C1120 ℃ or lower, 1100 ℃ or lower, 1080 ℃ or lower, 1050 ℃ or lower, 1010 ℃ or lower, 980 ℃ or lower, 960 ℃ or lower, 950 ℃ or lower, particularly 940 ℃ or lower. In addition, the liquid phase viscosity of the supporting glass substrate is preferably 10 4.8 dPa.s or more, 10 5.0 dPa.s or more, 10 5. 2 dPa.s or more, 10 5.4 dPa.s or more, especially 10 5.6 dPa.s or more. In this way, the plate-like shape is easily formed by the pull-down method, particularly the overflow pull-down method, and thus the overall plate thickness deviation can be reduced even if the surface is not polished. Alternatively, by a small amount of polishing, the overall thickness deviation can be reduced to less than 2.0 μm, in particular less than 1.0 μm. As a result, the manufacturing cost of the supporting glass substrate can be reduced. The "liquid phase temperature" may be calculated as follows: the glass powder passing through a standard sieve of 30 mesh (500 μm) and remaining in a 50 mesh (300 μm) was placed in a platinum boat, and then kept in a temperature gradient furnace for 24 hours, and the temperature at which crystals precipitated was measured to calculate the glass powder. The "liquid phase viscosity" can be calculated by measuring the viscosity of glass at the liquid phase temperature by the platinum ball pulling method.
The support glass substrate of the present invention preferably has the following shape.
The support glass substrate of the present invention is preferably in the form of a wafer or a substantially disk, and the diameter thereof is preferably 100mm to 500mm, particularly 150mm to 450 mm. Thus, the method can be easily applied to the manufacturing process of the fan out type WLP. The support glass substrate of the present invention is preferably a quadrangular shape (particularly a rectangular shape), and the length of each side is preferably 300mm to 600mm, 400mm to 550mm, 415mm to 515mm, particularly 450mm to 510 mm. Thus, the method can be easily applied to the process for producing fan out type PLP.
In the supporting glass substrate of the present invention, the thickness is preferably less than 2.0mm, and is preferably 1.8mm or less, 1.6mm or less, 1.5mm or less, 1.2mm or less, 1.1mm or less, 1.0mm or less, and particularly 0.9mm or less. The thinner the plate thickness, the lighter the mass of the laminated substrate, and thus the operability improves. On the other hand, when the plate thickness is too small, the strength of the supporting glass substrate itself is lowered, and the function as a supporting substrate is not easily achieved. Therefore, the thickness is preferably 0.1mm or more, 0.2mm or more, 0.3mm or more, 0.4mm or more, 0.5mm or more, 0.6mm or more, particularly more than 0.7mm.
In the supporting glass substrate of the present invention, the thickness deviation of the entire glass substrate is preferably 10 μm or less, 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, particularly 0.1 μm or more and less than 1 μm. The arithmetic average roughness Ra is preferably 20nm or less, 10nm or less, 5nm or less, 2nm or less, 1nm or less, particularly 0.5nm or less. The higher the surface accuracy, the easier it is to improve the accuracy of the machining process. In particular, since the wiring accuracy can be improved, high-density wiring can be performed. In addition, the strength of the support glass substrate is improved, and the support glass substrate and the laminated substrate are not easily broken. Further, the number of times of reuse of the supporting glass substrate can be increased. The "arithmetic average roughness Ra" may be measured by a stylus surface roughness meter or an Atomic Force Microscope (AFM).
In the supporting glass substrate of the present invention, the warpage amount is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and particularly 5 to 40 μm. The smaller the warpage amount, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring can be performed.
In the support glass substrate of the present invention, the roundness is preferably 1mm or less, 0.1mm or less, 0.05mm or less, and particularly 0.03mm or less. The smaller the roundness, the easier it is to apply to the manufacturing process of the fan out type WLP and PLP. The "roundness" is a value obtained by subtracting the minimum value from the maximum value of the outer shape except for the notch.
The support glass substrate of the present invention preferably has a notch, and the deep portion of the notch is more preferably substantially circular or substantially V-groove in plan view. Thus, the positioning member such as the positioning pin is brought into contact with the notch portion of the support glass substrate, and the support glass substrate is easily fixed in position. As a result, the support glass substrate and the processed substrate can be easily aligned. In particular, the notch is formed in the processed substrate, and when the positioning member is brought into contact with the processed substrate, the entire laminated substrate can be easily aligned. The notch portion is in contact with the positioning member, so that cracks are likely to occur, and the support glass substrate of the present invention is particularly effective when the support glass substrate has a notch portion because of its high crack resistance.
When the notch portion of the support glass substrate contacts the positioning member, stress tends to concentrate on the notch portion, and the support glass substrate tends to be broken with the notch portion as a starting point. In particular, when the glass substrate is supported by bending by an external force, this tendency becomes remarkable. Therefore, in the support glass substrate of the present invention, it is preferable that all or a part of the edge region where the surface of the notch intersects with the end face is chamfered. Thus, breakage of the notch portion as a starting point can be effectively avoided.
In the present invention, the entire or part of the edge region where the surface of the notch portion of the supporting glass substrate intersects with the end face is chamfered, preferably 50% or more of the edge region where the surface of the notch portion intersects with the end face is chamfered, more preferably 90% or more of the edge region where the surface of the notch portion intersects with the end face is chamfered, and even more preferably the entire edge region where the surface of the notch portion intersects with the end face is chamfered. The larger the area where chamfering is performed in the notch portion, the lower the probability of breakage of the notch portion as a starting point.
The chamfer width in the surface direction of the notch is preferably 50 to 900. Mu.m, 200 to 800. Mu.m, 300 to 700. Mu.m, 400 to 650. Mu.m, particularly 500 to 600. Mu.m. When the chamfer width in the surface direction of the notch is too small, the support glass substrate is easily broken with the notch as a starting point. On the other hand, if the chamfer width in the surface direction of the notch is too large, the chamfering efficiency is lowered, and the manufacturing cost of the supporting glass substrate tends to increase.
The chamfer width in the plate thickness direction of the notch is preferably 5% to 80%, 20% to 75%, 30% to 70%, 35% to 65%, particularly 40% to 60% of the plate thickness. When the chamfer width in the plate thickness direction of the notch portion is too small, the supporting glass substrate is easily broken with the notch portion as a starting point. On the other hand, when the chamfer width in the plate thickness direction of the notch portion is too large, external force tends to concentrate on the end face of the notch portion, and the supporting glass substrate tends to be broken with the end face of the notch portion as a starting point.
The supporting glass substrate of the present invention is preferably produced by mixing glass raw materials to prepare a glass batch, charging the glass batch into a glass melting furnace, clarifying and stirring the obtained molten glass, and then supplying the glass batch to a molding apparatus to mold the glass batch into a plate shape.
The support glass substrate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method. The overflow downdraw method is a method of forming a molten glass into a plate shape by overflowing the molten glass from both sides of a heat-resistant launder-like structure, and forming the molten glass into a plate shape by extending the molten glass downward while converging the overflowed molten glass at the lower end of the launder-like structure. In the overflow downdraw method, the surface to be the surface for supporting the glass substrate is formed in a free surface state without contacting the launder refractory. Therefore, by a small amount of polishing, the overall thickness deviation can be reduced to less than 2.0. Mu.m, particularly less than 1.0. Mu.m. As a result, the manufacturing cost of the supporting glass substrate can be reduced.
The support glass substrate of the present invention is preferably formed by overflow downdraw method and then polishing the surface. As a result, the overall thickness variation is easily limited to less than 2.0 μm,1.5 μm or less, 1.0 μm or less, particularly 0.1 μm or more and less than 1.0 μm.
The support glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably has no compressive stress layer on the surface. If the ion exchange treatment is performed, the deviation of the overall plate thickness of the support glass substrate is not easily reduced, but if the ion exchange treatment is not performed, such a problem can be eliminated. The supporting glass substrate of the present invention does not exclude the case of performing the ion exchange treatment and forming the compressive stress layer on the surface. When only the viewpoint of improving mechanical strength is focused on, it is preferable to perform the ion exchange treatment and form a compressive stress layer on the surface.
The laminated substrate of the present invention is characterized by comprising at least a processed substrate and a support glass substrate for supporting the processed substrate, and the support glass substrate is the support glass substrate. The laminated substrate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly, an ultraviolet curable resin), or the like is preferable. In addition, it is preferable to have heat resistance that can withstand heat treatment in the steps of manufacturing the fan out type WLP and PLP. Thus, the adhesive layer is less likely to be melted in the process of manufacturing the fan out type WLP and PLP, and the accuracy of the processing can be improved. In order to easily fix the processed substrate and the supporting glass substrate, an ultraviolet curable adhesive tape may be used as the adhesive layer.
The laminated substrate of the present invention preferably further has a release layer between the processed substrate and the supporting glass substrate, more specifically, between the processed substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. In this way, after a predetermined processing treatment is performed on the processed substrate, the processed substrate is easily peeled from the supporting glass substrate. The peeling of the processed substrate is preferably performed by irradiation of light such as laser light from the viewpoint of productivity. As the laser light source, an infrared light laser light source such as YAG laser (wavelength 1064 nm) or semiconductor laser (wavelength 780 to 1300 nm) can be used. In addition, a resin that is decomposed by irradiation with an infrared laser can be used for the release layer. In addition, a substance that efficiently absorbs infrared rays and converts the absorbed infrared rays into heat may be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, etc. may be added to the resin.
The release layer is made of a material that generates "in-layer release" or "interfacial release" by irradiation of light with laser light or the like. In other words, it is composed of the following materials: the material is a material in which bonding force between atoms or molecules is lost or reduced when light of a certain intensity is irradiated, ablation (absorption) or the like occurs, and peeling occurs. The components contained in the release layer may be released as a gas by irradiation with irradiation light to be separated, or may be released as a vapor by absorption of light by the release layer to be separated.
In the laminated substrate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. Thus, when the processed substrate and the support glass substrate are supported, even if the center positions of the processed substrate and the support glass substrate are slightly deviated, the edge portion of the processed substrate is less likely to protrude from the support glass substrate.
The method for manufacturing a semiconductor package of the present invention is characterized by comprising: preparing a laminated substrate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate; and a step of processing the processed substrate, wherein the support glass substrate is the support glass substrate.
The method for manufacturing a semiconductor package according to the present invention preferably further includes a step of conveying the laminated substrate. Thus, the processing efficiency of the processing can be improved. The "step of conveying the laminated substrate" and the "step of processing the processed substrate" need not be separately performed, and may be performed simultaneously.
In the method for manufacturing a semiconductor package of the present invention, the processing is preferably a process of performing wiring on one surface of the processing substrate or a process of forming solder bumps on one surface of the processing substrate. In the method for manufacturing a semiconductor package according to the present invention, since dimensional change is less likely to occur in the processed substrate during these processes, these steps can be suitably performed.
As the processing treatment, any of the following treatments may be used in addition to the above: a process of mechanically polishing one surface of the processed substrate (typically, a surface on the opposite side from the supporting glass substrate), a process of dry etching one surface of the processed substrate (typically, a surface on the opposite side from the supporting glass substrate), and a process of wet etching one surface of the processed substrate (typically, a surface on the opposite side from the supporting glass substrate). In the method for manufacturing a semiconductor package of the present invention, warpage is less likely to occur in a processed substrate, and the rigidity of a laminated substrate can be maintained. As a result, the above processing can be performed appropriately.
The present invention will be further described with reference to the accompanying drawings. Fig. 5 is a schematic perspective view showing an example of the laminated substrate 9 of the present invention. In fig. 5, the laminated substrate 9 includes: the glass substrate 10 and the processed substrate 11 are supported. In order to prevent dimensional changes of the processed substrate 11, the supporting glass substrate 10 is bonded to the processed substrate 11. A release layer 12 and an adhesive layer 13 are disposed between the support glass substrate 10 and the processing substrate 11. The release layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processing substrate 11.
As can be seen from fig. 5, the laminated substrate 9 is formed by laminating a supporting glass substrate 10, a release layer 12, an adhesive layer 13, and a processing substrate 11 in this order. The shape of the support glass substrate 10 is determined according to the processed substrate 11, and in fig. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially circular plate shapes. For example, a resin decomposed by irradiation with laser light can be used for the release layer 12. In addition, a substance that absorbs laser light efficiently and converts it into heat may be added to the resin. Such as carbon black, graphite powder, particulate metal powder, dyes, pigments, and the like. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is formed of a resin and is applied by various printing methods, ink jet methods, spin coating methods, roll coating methods, and the like, for example. In addition, ultraviolet curable adhesive tapes may be used. After the supporting glass substrate 10 is peeled from the processing substrate 11 by the peeling layer 12, the adhesive layer 13 is dissolved and removed by a solvent or the like. The ultraviolet-curable adhesive tape can be removed by peeling the adhesive tape after irradiation with ultraviolet rays.
Fig. 6 is a schematic cross-sectional view showing a chip-first type manufacturing process of the fan out type WLP. Fig. 6 (a) shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in fig. 6 (b), a plurality of semiconductor chips 22 are attached to the adhesive layer 21. At this time, the active side surface of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in fig. 6 (c), the semiconductor chip 22 is molded with the sealing material 23 of resin. The sealing material 23 is made of a material having a small dimensional change after compression molding or a small dimensional change during wiring molding. Next, as shown in fig. 6 (d) and (e), the processed substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then bonded and fixed to the support glass substrate 26 via the adhesive layer 25. At this time, the surface of the processing substrate 24 opposite to the surface where the semiconductor chip 22 is embedded is arranged on the support glass substrate 26 side. In this way, the laminated substrate 27 can be obtained. The release layer may be formed between the adhesive layer 25 and the support glass substrate 26, if necessary. After the obtained laminated substrate 27 is carried, as shown in fig. 6 (f), wiring 28 is formed on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, and then a plurality of solder bumps 29 are formed. Finally, after separating the handle substrate 24 from the supporting glass substrate 26, the handle substrate 24 is cut into the semiconductor chips 22, and then supplied to the subsequent packaging process (fig. 6 (g)).
The glass substrate is characterized in that an information recognition part having a dot as a structural unit is provided on the surface, and the maximum length of a crack extending from the dot in the surface direction is 350 [ mu ] m or less. The technical features of the glass substrate of the present invention are described in the description of the support glass substrate of the present invention, and a detailed description thereof is omitted here.
Examples
The present invention will be described below based on examples. The following examples are merely illustrative. The present invention is not limited to the following examples.
Table 1 shows examples (sample Nos. 1 to 10) and comparative examples (sample No. 11) of the present invention.
TABLE 1
| No.1 | No.2 | No3 | No.4 | No.5 | No.6 | No.7 | No.8 | No.9 | No.10 | No.11 | |
| Coefficient of linear thermal expansion (. Times.10) -7 /℃) | 35 | 58 | 75 | 91 | 70 | 48 | 95 | 102 | 112 | 102 | 102 |
| Maximum crack length (mum) | 4 | 9 | 8 | 196 | 1 | 5 | 35 | 97 | 45 | 85 | 352 |
| Breakage of process | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | × |
The glass substrate of sample No.1 was produced as follows. First, siO is contained in mass% as a glass composition 2 59.7％、Al 2 O 3 16.5％、B 2 O 3 10.3％、MgO 0.3％、CaO 8.0％、SrO 4.5％、BaO 0.5％、SnO 2 0.2% of glass raw materials are mixed and kneaded to obtain a glass batch, and the glass batch is fed to a glass melting furnace to be melted at 1550 ℃, and the obtained molten glass is clarified, stirred, and fed to a forming apparatus of overflow downdraw method to be formed so that the sheet thickness becomes 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
The glass substrate of sample No.2 was produced as follows. First, siO is contained in mass% as a glass composition 2 66.1％、Al 2 O 3 8.5％、B 2 O 3 12.4％、Na 2 O 8.4％、CaO 3.3％、ZnO 0.9％、SnO 2 0.4% of glass raw materials are mixed and blended to obtain a glass batch, the glass batch is fed into a glass melting furnace to be melted at 1500 ℃, and the obtained molten glass is clarified and stirred to be fedThe sheet was formed so that the thickness of the sheet became 1.05mm by a forming apparatus of the overflow downdraw method. Then, the obtained glass substrate was cut into a rectangular shape.
A glass substrate of sample No.3 was produced as follows. First, siO is contained in mass% as a glass composition 2 65.8％、Al 2 O 3 8.0％、B 2 O 3 8.9％、Na 2 O 12.8％、CaO 3.2％、ZnO 0.9％、SnO 2 0.4% of glass raw materials were mixed and kneaded to obtain a glass batch, the glass batch was fed to a glass melting furnace, melted at 1500 ℃, and the obtained molten glass was clarified, stirred, and fed to a forming apparatus of overflow downdraw method, and formed so that the sheet thickness became 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
A glass substrate of sample No.4 was produced as follows. First, siO is contained in mass% as a glass composition 2 61.6％、Al 2 O 3 18.0％、B 2 O 3 0.5％、Na 2 O 14.5％、K 2 O 2.0％、MgO 3.0％、SnO 2 0.4% of glass raw materials were mixed and kneaded to obtain a glass batch, the glass batch was fed to a glass melting furnace, melted at 1650 ℃, and the obtained molten glass was clarified, stirred, and fed to a forming apparatus of overflow downdraw method, and formed so that the sheet thickness became 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
A glass substrate of sample No.5 was produced as follows. First, siO is contained in mass% as a glass composition 2 40.92％、Al 2 O 3 5.0％、B 2 O 3 5.0％、CaO 3.0％、SrO 11.2％、BaO 25.2％、ZnO 3.0％、TiO 2 4.6％、ZrO 2 2.0％、Sb 2 O 3 0.08% of glass raw materials are mixed and blended to obtain a glass batch, the glass batch is fed to a glass melting furnace to be melted at 1250 ℃, and the obtained molten glass is clarified and stirred and fed to a forming apparatus of an overflow downdraw method to obtain a glass batchThe sheet was formed so that the thickness became 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
The glass substrate of sample No.6 was produced as follows. First, siO is contained in mass% as a glass composition 2 72.75％、Al 2 O 3 4.3％、B 2 O 3 15.1％、Na 2 O 5.7％、K 2 O 1.8％、CaO 0.2％、SnO 2 0.15% of glass raw materials were mixed and kneaded to obtain a glass batch, the glass batch was fed to a glass melting furnace, melted at 1600 ℃, and the obtained molten glass was clarified, stirred, and fed to a forming apparatus of overflow downdraw method, and formed so that the sheet thickness became 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
A glass substrate of sample No.7 was produced as follows. First, siO is contained in mass% as a glass composition 2 65.8％、Al 2 O 3 8.0％、B 2 O 3 3.7％、Na 2 O 18.1％、CaO 3.2％、ZnO 0.9％、SnO 2 0.3% of glass raw materials are mixed and kneaded to obtain a glass batch, and the glass batch is fed to a glass melting furnace to be melted at 1300 ℃, and the obtained molten glass is clarified, stirred, and fed to a forming apparatus of overflow downdraw method to be formed so that the sheet thickness becomes 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
A glass substrate of sample No.8 was produced as follows. First, siO is contained in mass% as a glass composition 2 65.7％、Al 2 O 3 8.0％、B 2 O 3 2.1％、Na 2 O 19.8％、CaO 3.2％、ZnO 0.9％、SnO 2 0.3% of glass raw materials are mixed and kneaded to obtain a glass batch, and the glass batch is fed to a glass melting furnace to be melted at 1300 ℃, and the obtained molten glass is clarified, stirred, and fed to a forming apparatus of overflow downdraw method to be formed so that the sheet thickness becomes 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
The glass substrate of sample No.9 was produced as follows. First, siO is contained in mass% as a glass composition 2 65.3％、Al 2 O 3 8.0％、Na 2 O 22.3％、CaO 3.2％、ZnO 0.9％、SnO 2 0.3% of glass raw materials are mixed and kneaded to obtain a glass batch, and the glass batch is fed to a glass melting furnace to be melted at 1300 ℃, and the obtained molten glass is clarified, stirred, and fed to a forming apparatus of overflow downdraw method to be formed so that the sheet thickness becomes 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
Glass substrates of sample nos. 10 and 11 were produced as follows. First, siO is contained in mass% as a glass composition 2 65.7％、Al 2 O 3 8.0％、B 2 O 3 2.1％、Na 2 O 19.8％、CaO 3.2％、ZnO 0.9％、SnO 2 0.3% of glass raw materials were mixed and kneaded to obtain a glass batch, the glass batch was fed to a glass melting furnace, melted at 1650 ℃, and the obtained molten glass was clarified, stirred, and fed to a forming apparatus of overflow downdraw method, and formed so that the sheet thickness became 1.05 mm. Then, the obtained glass substrate was cut into a rectangular shape.
Next, after the cut glass substrates (sample Nos. 1 to 11: the total thickness deviation of about 4.0 μm) were cut out to have a diameter of 300mm, both surfaces of the glass substrates were polished by a polishing apparatus. Specifically, the two surfaces of the glass substrate are polished while sandwiching the two surfaces of the glass substrate by a pair of polishing pads having different outer diameters, and the glass substrate and the pair of polishing pads are rotated together. During polishing, a part of the glass substrate is occasionally controlled so as to protrude from the polishing pad. The polishing pad was made of polyurethane, the average particle diameter of the polishing slurry used in the polishing treatment was set to 2.5 μm, and the polishing rate was set to 15 m/min. The glass substrates obtained after the polishing treatment were subjected to a Bow/Warp measuring device SBW-331ML/d, manufactured by KOBELO scientific research, to measure the total thickness deviation and warpage. As a result, the overall thickness deviation was less than 1.0 μm, and the warpage amounts were 35 μm or less, respectively. The average linear thermal expansion coefficient of the obtained glass substrates subjected to the polishing treatment was measured at a temperature ranging from 30 to 380 ℃ by an dilatometer. The results are shown in Table 1.
The polished glass substrate was provided with an information recognition unit having a plurality of points formed of annular grooves as structural units using a pulsed femtosecond laser. Here, with respect to sample nos. 1 to 11, the maximum length of the crack propagating from the point was controlled by adjusting the pulse width of the pulsed femtosecond laser. Next, the maximum length of the crack generated from the spot was measured using a digital microscope VHX-600 (manufactured by KEYENCE Co.). The results are shown in table 1, fig. 7, and fig. 8. FIG. 7 is a photomicrograph of sample No. 2. FIG. 8 is a photomicrograph of sample No. 11. The maximum length of the crack was obtained by plotting the crack by length measurement software and measuring the length of the crack.
The glass substrate on which the information recognition portion was formed was subjected to a heat treatment in the steps of manufacturing WLP and PLP simulating fan out type, and the glass substrate was evaluated as "o" when the glass substrate was not broken and as "x" when the glass substrate was broken due to the crack generated from the point.
As is clear from Table 1, since the maximum lengths of the cracks generated from the points in the sample Nos. 1 to 10 in the surface direction are small, it is considered that breakage is not likely to occur in the manufacturing steps of the fan out type WLP and PLP. On the other hand, since the maximum length of the crack generated from the point of sample No.11 in the surface direction is large, it is considered that breakage easily occurs in the steps of manufacturing the fan out-type WLP and PLP.
Description of the reference numerals
1. 10, 26 support glass substrate
1a peripheral edge portion
2. Surface of the body
2a,2b divided into areas
3. Information identification unit
4. Notch portion
5. Text with a character pattern
6. Point(s)
7. Annular groove
8. Cracking of
9. 27 laminate
11. 24 processing substrate
12. Stripping layer
13. 21, 25 adhesive layer
20. Support member
22. Semiconductor chip
23. Sealing material
28. Wiring
29. Solder bump
Claims (11)
1. A supporting glass substrate for supporting a processed substrate, characterized in that an information recognition part having a dot as a structural unit is provided on the surface of the supporting glass substrate, and the maximum length of a crack propagating from the dot in the surface direction is 1 [ mu ] m to 196 [ mu ] m.
2. The supporting glass substrate according to claim 1, wherein the dots are formed by annular grooves.
3. The supporting glass substrate according to claim 1 or 2, wherein the average linear thermal expansion coefficient in the temperature range of 30℃to 380℃is 30X 10 -7 Higher than/DEG C and 165 multiplied by 10 -7 And/or lower.
4. The supporting glass substrate according to claim 1 or 2, wherein the supporting glass substrate has a wafer shape or a substantially disk shape having a diameter of 100mm to 500mm, a plate thickness of less than 2.0mm, and an overall plate thickness deviation of 5 μm or less.
5. The supporting glass substrate according to claim 1 or 2, wherein the supporting glass substrate has a quadrilateral shape with 300mm or more sides, a plate thickness of less than 2.0mm, and an overall plate thickness deviation of 10 μm or less.
6. A laminated substrate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate according to claim 1 or 2.
7. The laminate substrate of claim 6, wherein the handle substrate has at least semiconductor chips molded with a sealing material.
8. A method for manufacturing a semiconductor package is characterized by comprising the steps of:
Preparing a laminated substrate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate; and
a step of performing a processing treatment on the processed substrate,
the support glass substrate according to any one of claims 1 to 5.
9. The method of manufacturing a semiconductor package according to claim 8, wherein the processing includes a step of wiring one surface of the processed substrate.
10. The method of manufacturing a semiconductor package according to claim 8, wherein the processing includes forming solder bumps on one surface of the processed substrate.
11. A glass substrate is characterized in that an information recognition part having a dot as a structural unit is provided on the surface, and the maximum length of a crack extending from the dot in the surface direction is 1 [ mu ] m or more and 196 [ mu ] m or less.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-166517 | 2017-08-31 | ||
| JP2017166517 | 2017-08-31 | ||
| JP2018061106A JP7276644B2 (en) | 2017-08-31 | 2018-03-28 | SUPPORTING GLASS SUBSTRATE AND LAMINATED SUBSTRATE USING THE SAME |
| JP2018-061106 | 2018-03-28 | ||
| PCT/JP2018/024617 WO2019044148A1 (en) | 2017-08-31 | 2018-06-28 | Support glass substrate and laminated substrate using same |
| CN201880054592.1A CN111033687B (en) | 2017-08-31 | 2018-06-28 | Support glass substrate and laminated substrate using same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880054592.1A Division CN111033687B (en) | 2017-08-31 | 2018-06-28 | Support glass substrate and laminated substrate using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117228966A true CN117228966A (en) | 2023-12-15 |
Family
ID=65525444
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311199194.8A Pending CN117228966A (en) | 2017-08-31 | 2018-06-28 | Support glass substrate and laminated substrate using same |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN117228966A (en) |
| TW (1) | TWI832225B (en) |
| WO (1) | WO2019044148A1 (en) |
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| JPWO2022230716A1 (en) * | 2021-04-30 | 2022-11-03 | ||
| WO2024085083A1 (en) * | 2022-10-21 | 2024-04-25 | Ａｇｃ株式会社 | Glass substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09278494A (en) * | 1996-04-15 | 1997-10-28 | Corning Japan Kk | Method for marking glass substrate |
| TW430873B (en) * | 1998-11-25 | 2001-04-21 | Komatsu Mfg Co Ltd | Form of microscopic dot mark using laser beam and marking method thereof |
| JP3242632B2 (en) * | 1998-11-25 | 2001-12-25 | 株式会社小松製作所 | Small dot mark form by laser beam, marking method |
| JP6519221B2 (en) * | 2015-02-23 | 2019-05-29 | 日本電気硝子株式会社 | Glass substrate and laminate using the same |
| JP6593676B2 (en) * | 2015-03-02 | 2019-10-23 | 日本電気硝子株式会社 | Laminated body and semiconductor package manufacturing method |
-
2018
- 2018-06-28 WO PCT/JP2018/024617 patent/WO2019044148A1/en active Application Filing
- 2018-06-28 CN CN202311199194.8A patent/CN117228966A/en active Pending
- 2018-07-09 TW TW111115975A patent/TWI832225B/en active
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| Publication number | Publication date |
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| TWI832225B (en) | 2024-02-11 |
| WO2019044148A1 (en) | 2019-03-07 |
| TW202231396A (en) | 2022-08-16 |
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